CN107887406B

CN107887406B - Organic light emitting display device and method of manufacturing the same

Info

Publication number: CN107887406B
Application number: CN201611206826.9A
Authority: CN
Inventors: 丁得洙; 赵镛善; 洪荣垠; 金成洙
Original assignee: LG Display Co Ltd
Current assignee: LG Display Co Ltd
Priority date: 2016-09-30
Filing date: 2016-12-23
Publication date: 2021-09-07
Anticipated expiration: 2036-12-23
Also published as: US10177206B2; US20180097047A1; CN113782692B; CN113782692A; KR20180036434A; CN107887406A

Abstract

An organic light emitting display device and a method of manufacturing the same are disclosed. The organic light emitting display device may include: a substrate having an active area and a pad area; an anode electrode on the active area of the substrate; a bank layer on the anode electrode to define a pixel region; an organic light emitting layer on the bank layer and connected to the anode electrode; a cathode electrode on the organic light emitting layer; an eave structure located below the bank layer and spaced apart from the anode electrode; and an auxiliary electrode located below the eave structure and electrically connected to the cathode electrode, wherein the cathode electrode extends to a contact space located below the eave structure, and the extended cathode electrode is connected to the auxiliary electrode in the contact space.

Description

Organic light emitting display device and method of manufacturing the same

Cross Reference to Related Applications

This application claims the benefit of korean patent application No.10-2016-0127076, filed on 30/9/2016, which is hereby incorporated by reference as if fully set forth herein.

Technical Field

Embodiments of the invention relate to an organic light emitting display device, and more particularly, to a top emission type organic light emitting display device and a method of manufacturing the same.

Background

An Organic Light Emitting Display (OLED) device, which is a self-light emitting display device, has advantages of low power consumption, fast response speed, high light emitting efficiency, high luminance, and wide viewing angle.

OLED devices may be largely classified into top emission type and bottom emission type according to the direction of light emitted from the organic light emitting device. In the case of the bottom emission type, a circuit device is provided between the light emitting layer and the image display surface, whereby the aperture ratio can be reduced due to the circuit device. Meanwhile, in the case of the top emission type, no circuit device is provided between the light emitting layer and the image display surface, whereby the aperture ratio can be improved.

Fig. 1 is a cross-sectional view of a related art top emission type OLED device.

As shown in fig. 1, a thin film transistor layer T including an active layer 11, a gate insulating film 12, a gate electrode 13, an interlayer insulating layer 14, a source electrode 15, and a drain electrode 16 is disposed on a substrate 10, and then a passivation layer 20 and a planarization layer 30 are sequentially disposed on the thin film transistor layer T.

In addition, the anode electrode 40 and the auxiliary electrode 50 are disposed on the planarization layer 30. The auxiliary electrode 50 is provided to reduce the resistance of the cathode electrode 80, which will be described later.

The bank 60 is disposed on the anode electrode 40 and the auxiliary electrode 50 to define a pixel region. Further, an organic light emitting layer 70 is disposed in the pixel region defined by the bank 60, and a cathode electrode 80 is disposed on the organic light emitting layer 70.

In the case of the top emission type, light emitted from the organic light emitting layer 70 passes through the cathode electrode 80. In this case, the cathode electrode 80 is formed of a transparent conductive material, which results in an increase in the resistance thereof. In order to reduce the resistance in the cathode electrode 80, the cathode electrode 80 is connected to the auxiliary electrode 50.

In order to connect the cathode electrode 80 with the auxiliary electrode 50, the upper surface of the auxiliary electrode 50 is not covered with the organic light emitting layer 70. That is, the upper surface of the auxiliary electrode 50 is exposed to the outside after the process of forming the organic light emitting layer 70, so that the cathode electrode 80 is connected to the upper surface of the auxiliary electrode 50. In the case of the related art, the reverse tapered partition portion 65 is provided on the upper surface of the auxiliary electrode 50, thereby preventing the upper surface of the auxiliary electrode 50 from being covered with the organic light emitting layer 70.

Due to the inversely tapered partition portions 65, a gap space is provided between the bank 60 and the partition portions 65. In this case, the reverse tapered partition portion 65 serves as an eave (eave) so that the organic light emitting layer 70 is not deposited in the gap space. That is, the organic light emitting layer 70 is formed through a deposition process using a deposition material having excellent straightness (straightness), for example, an evaporation process. The organic light emitting layer 70 is not deposited in the gap space between the bank 60 and the separating portion 65 according to the separating portion 65 acting as an eave during the deposition process of the organic light emitting layer 70.

Meanwhile, the cathode electrode 80 may be formed by a deposition process using a deposition material having poor straightness, for example, a sputtering process. Thus, the cathode electrode 80 may be deposited in the gap space between the bank 60 and the separator 65, whereby the cathode electrode 80 and the auxiliary electrode 50 may be electrically connected to each other.

However, the related art top emission type OLED device necessarily including the reverse tapered partition 65 may cause the following disadvantages.

A PEB (Post Exposure Bake) process should be performed to pattern the reverse tapered partition 65. The PEB process is very complicated, making it difficult to obtain the desired reverse taper. If the reverse tapered structure is not formed into a desired shape, the partition 65 may collapse or fall off. In this case, it is difficult to electrically connect the cathode electrode 80 and the auxiliary electrode 50 to each other.

Disclosure of Invention

Accordingly, embodiments of the present invention are directed to a top emission type organic light emitting display device and a method of fabricating the same that substantially obviate one or more problems due to limitations and disadvantages of the related art.

An aspect of embodiments of the present invention is directed to provide a top emission type organic light emitting display device in which electrical connection between a cathode electrode and an auxiliary electrode is easily achieved without forming a reverse tapered partition portion, and a method of manufacturing the same.

Additional advantages and features of embodiments of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of embodiments of the invention. These objects and other advantages of embodiments of the present invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purpose of embodiments of the present invention, as embodied and broadly described herein, there is provided an organic light emitting display device, which may include: the anode electrode and the eave structure are disposed under the bank layer and spaced apart from each other, the cathode electrode is disposed on the bank layer, and the auxiliary electrode is disposed under the eave structure and electrically connected to the cathode electrode. In this case, the cathode electrode extends to a contact space located below the eave structure, and the extended cathode electrode is connected to the auxiliary electrode in the contact space.

Further, the organic light emitting display device may be manufactured by: providing an auxiliary electrode on the substrate; providing a passivation layer and a planarization layer on the auxiliary electrode; arranging an anode electrode and an eave structure on the planarization layer; providing a contact hole in the passivation layer and the planarization layer to expose the auxiliary electrode; and arranging a bank layer, a light-emitting layer and a cathode electrode on the anode electrode and the eave structure. In this case, the cathode electrode extends to a contact space located under the eave structure, and the extended cathode electrode is connected with the exposed auxiliary electrode.

According to an aspect of the present invention, there is provided an organic light emitting display device including: a substrate having an active area and a pad area; an anode electrode on the active area of the substrate; a bank layer on the anode electrode to define a pixel region; an organic light emitting layer on the bank layer and connected to the anode electrode; a cathode electrode on the organic light emitting layer; an eave structure located below the bank layer and spaced apart from the anode electrode; and an auxiliary electrode located below the eave structure and electrically connected to the cathode electrode, wherein the cathode electrode extends to a contact space located below the eave structure, and the cathode electrode is connected to the auxiliary electrode in the contact space.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: providing an auxiliary electrode on the substrate; disposing a passivation layer on the auxiliary electrode, and disposing a planarization layer on the passivation layer; arranging an anode electrode and an eave structure on the planarization layer; providing a contact hole in the passivation layer and the planarization layer to expose the auxiliary electrode through the contact hole; arranging a bank layer on the anode electrode and the eave structure; an organic light emitting layer is provided on the anode electrode; and disposing a cathode electrode on the organic light emitting layer, wherein the cathode electrode extends to a contact space under the eave structure, and the extended cathode electrode is connected to the exposed auxiliary electrode.

According to still another aspect of the present invention, there is provided an organic light emitting display device including: a substrate having an active area and a pad area; an anode electrode on the active area of the substrate; a bank layer on the anode electrode to define a pixel region; an organic light emitting layer on the bank layer and connected to the anode electrode; a cathode electrode on the organic light emitting layer; an eave structure located below the bank layer and having a first portion and a second portion, the first portion being parallel to the substrate and the second portion being non-parallel to the substrate; the auxiliary electrode is positioned below the eave structure and electrically connected with the cathode electrode; and a contact space between the auxiliary electrode and the first portion of the eave structure.

It is to be understood that both the foregoing general description and the following detailed description of embodiments of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

Drawings

The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the principles of the embodiments of the invention. In the drawings:

fig. 1 is a sectional view illustrating a top emission type OLED device according to the related art;

fig. 2A is a cross-sectional view illustrating an OLED device according to an embodiment of the present invention, and fig. 2B is a plan view illustrating the OLED device according to an embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating an OLED device according to another embodiment of the present invention;

FIG. 4 is a cross-sectional view illustrating an OLED device according to another embodiment of the present invention;

fig. 5A to 5G are sectional views illustrating a method of manufacturing an OLED device according to an embodiment of the present invention, which relates to the method of manufacturing the OLED device shown in fig. 2A and 2B;

fig. 6A to 6G are sectional views illustrating a method of manufacturing an OLED device according to another embodiment of the present invention, which relates to the method of manufacturing the OLED device shown in fig. 3; and

fig. 7A to 7F are sectional views illustrating a method of manufacturing an OLED device according to another embodiment of the present invention, which relates to the method of manufacturing the OLED device shown in fig. 4.

Detailed Description

Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Advantages and features of the present invention and methods of accomplishing the same will be set forth in the following embodiments which are described with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Furthermore, the invention is limited only by the scope of the claims.

The shapes, sizes, proportions, angles and numbers disclosed in the drawings for the purpose of describing embodiments of the invention are by way of example only, and are not intended to be limiting of the invention to the details shown. Like reference numerals refer to like elements throughout. In the following description, a detailed description of related known functions or configurations will be omitted when it is determined that the detailed description may unnecessarily obscure the present invention. Where the terms "comprising," "having," and "including" are used in the present application, additional components may be added, unless "only" is used.

In explaining an element, although not explicitly stated, the element should be construed as including an error range.

In the description of the embodiments of the present invention, when a structure (e.g., an electrode, a line, a wiring, a layer, or a contact) is described as being formed at an upper/lower portion of another structure or on/under the other structure, the description should be construed to include a case where the structures are in contact with each other and a case where a third structure is disposed therebetween.

In describing temporal relationships, for example, when the temporal sequence is described as "after … …", "subsequently", "next", and "before … …", a discontinuous condition may be included unless "exactly" or "directly" is used.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.

Those skilled in the art can fully appreciate that the features of the various embodiments of the present invention can be combined or combined with each other, in part or in whole, and in various interoperations and drives with each other in the art. Embodiments of the invention may be implemented independently of each other or together in an interdependent relationship.

Hereinafter, an Organic Light Emitting Display (OLED) device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Fig. 2A is a sectional view illustrating an OLED device according to an embodiment of the present invention, and fig. 2B is a plan view illustrating the OLED device according to an embodiment of the present invention.

As shown in fig. 2A, the OLED device according to one embodiment of the present invention may include an active area AA and a pad area PA on a substrate 100. First, the structure of the active area AA on the substrate 100 will be described in detail as follows. The substrate 100 may be formed of glass or transparent plastic.

The light-shielding layer 110 and the low voltage line (VSS)120 are disposed on the substrate 100. The light shielding layer 110 reduces or prevents light incident on an active layer 126, which will be described later, and the low voltage line (VSS)120 applies a low voltage to the cathode electrode 220. In addition, the low voltage line (VSS)120 reduces the resistance of the cathode electrode 220 together with the auxiliary electrode 170.

The light-shielding layer 110 and the low voltage line (VSS)120 are disposed in the same layer and are formed of the same material. In this case, the light-shielding layer 110 and the low voltage line (VSS)120 may be simultaneously manufactured through the same process.

The light shielding layer 110 may include a lower light shielding layer 111 and an upper light shielding layer 112. The low voltage line (VSS)120 may include a lower low voltage line (VSS)121 and an upper low voltage line (VSS) 122. The lower light-shielding layer 111 and the lower low voltage lines (VSS)121 may be formed of the same material, and the upper light-shielding layer 112 and the upper low voltage lines (VSS)122 may be formed of the same material.

The lower light-shielding layer 111 prevents the lower surface of the upper light-shielding layer 112 from being corroded. The lower low voltage line (VSS)121 prevents the lower surface of the upper low voltage line (VSS)122 from being corroded. Therefore, the oxidation degree of each of the lower light-shielding layers 111 and the lower low-voltage lines (VSS)121 is lower than that of each of the upper light-shielding layers 112 and the upper low-voltage lines (VSS)122, and the corrosion resistance in each of the lower light-shielding layers 111 and the lower low-voltage lines (VSS)121 is better than that in each of the upper light-shielding layers 112 and the upper low-voltage lines (VSS) 122. For example, the lower light-shielding layer 111 and the lower low voltage line (VSS)121 may be formed of an alloy of molybdenum and titanium (MoTi), but are not limited to these materials.

The resistance in the material for the upper light-shielding layer 112 and the upper low voltage line (VSS)122 may be lower than the resistance in the material for the lower light-shielding layer 111 and the lower low voltage line (VSS) 121. For example, the upper light shielding layer 112 and the upper low voltage line (VSS)122 may be formed of a metal material such as copper (Cu), but is not limited to such a material. In order to reduce the total resistance of the low voltage lines (VSS)120, the thickness of the upper low voltage lines (VSS)122 is preferably greater than that of the lower low voltage lines (VSS)121, but this is not necessarily required.

The buffer layer 125 is disposed on the light-shielding layer 110 and the low voltage line (VSS) 120. The buffer layer 125 extends from the active area AA to the pad area PA. The buffer layer 125 may be formed of an inorganic insulating material, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multi-layer film including silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.

A thin film transistor including an active layer 126, a gate electrode 130, a source electrode 150, and a drain electrode 160 is disposed on the buffer layer 125.

An active layer 126 is disposed on the buffer layer 125, a gate insulating film 127 is disposed on the active layer 126, a gate electrode 130 is disposed on the gate insulating film 127, an interlayer insulating layer 140 is disposed on the gate electrode 130, and a source electrode 150, a drain electrode 160, and an auxiliary electrode 170 are disposed on the interlayer insulating layer 140. The active layer 126 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

The gate insulating film 127 insulates the active layer 126 and the gate electrode 130 from each other. The gate insulating film 127 and the gate electrode 130 may have the same pattern. The gate insulating film 127 may be formed of an inorganic insulating material, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multi-layer film including silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.

The gate electrode 130 may include a lower gate electrode 131 and an upper gate electrode 132. The lower gate electrode 131 prevents the lower surface of the upper gate electrode 132 from being corroded. Thus, the oxidation degree of the lower gate electrode 131 is lower than that of the upper gate electrode 132, and the corrosion resistance of the lower gate electrode 131 is superior to that of the upper gate electrode 132. For example, the lower gate electrode 131 may be formed of an alloy of molybdenum and titanium (MoTi), but is not limited to these materials. The resistance in the material for the upper gate electrode 132 may be lower than the resistance in the material for the lower gate electrode 131. For example, the upper gate electrode 132 may be formed of a metal material such as copper (Cu), but is not limited to such a material. In order to reduce the overall resistance of the gate electrode 130, the thickness of the upper gate electrode 132 is preferably greater than that of the lower gate electrode 131, but this is not essential.

The interlayer insulating layer 140 may be formed of an inorganic insulating material, such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multi-layer film including silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto. The interlayer insulating layer 140 may extend from the active area AA to the pad area PA.

A source electrode 150 and a drain electrode 160 facing each other are disposed on the interlayer insulating layer 140. The interlayer insulating layer 140 has a first contact hole CH1 for exposing one end region of the active layer 126 and a second contact hole CH2 for exposing the other end region of the active layer 126 therein. The source electrode 150 is connected to one end region of the active layer 126 through a first contact hole CH1, and the drain electrode 160 is connected to the other end region of the active layer 126 through a second contact hole CH 2.

Further, a third contact hole CH3 for exposing the light-shielding layer 110 is provided in the buffer layer 125 and the interlayer insulating layer 140. The source electrode 150 is connected to the light-shielding layer 110 through the third contact hole CH 3. The light shielding layer 110 is formed of a conductive material. The light-shielding layer 110 may have an adverse effect on the active layer 126 if it is in a floating state. By connecting the light-shielding layer 110 and the source electrode 150, adverse effects on the active layer 126 can be reduced or prevented. The light-shielding layer 110 may be connected to the drain electrode 160, if necessary.

In addition, a fourth contact hole CH4 for exposing the low voltage line (VSS)120 is provided in the buffer layer 125 and the interlayer insulating layer 140, and the auxiliary electrode 170 is connected to the low voltage line (VSS)120 via the fourth contact hole CH 4. The auxiliary electrode 170 functions as a connection electrode for connecting the cathode electrode 220 with the low voltage line (VSS) 120. According to an embodiment of the present invention, the resistance of the cathode electrode 220 may be reduced by the low voltage line (VSS)120 and the auxiliary electrode 170.

The source electrode 150, the drain electrode 160, and the auxiliary electrode 170 may be disposed in the same layer and may be formed of the same material. In this case, the source electrode 150, the drain electrode 160, and the auxiliary electrode 170 may be simultaneously manufactured through the same process.

The source electrode 150 may include a lower source electrode 151, an upper source electrode 152, and a cap source electrode 153. The drain electrode 160 may include a lower drain electrode 161, an upper drain electrode 162, and a cover drain electrode 163. The auxiliary electrode 170 may include a lower auxiliary electrode 171, an upper auxiliary electrode 172, and a cover auxiliary electrode 173.

The lower source electrode 151, the lower drain electrode 161, and the lower auxiliary electrode 171 may be formed of the same material. The upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172 may be formed of the same material. The cap source electrode 153, the cap drain electrode 163, and the cap auxiliary electrode 173 may be formed of the same material.

The lower source electrode 151 prevents the lower surface of the upper source electrode 152 from being corroded. The lower drain electrode 161 prevents the lower surface of the upper drain electrode 162 from being corroded. The lower auxiliary electrode 171 prevents the lower surface of the upper auxiliary electrode 172 from being corroded. Accordingly, the oxidation degree in each of the lower source electrode 151, the lower drain electrode 161, and the lower auxiliary electrode 171 is lower than that in each of the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172. Further, the corrosion resistance in each of the lower source electrode 151, the lower drain electrode 161, and the lower auxiliary electrode 171 is superior to that in each of the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172. For example, the lower source electrode 151, the lower drain electrode 161, and the lower auxiliary electrode 171 may be formed of an alloy of molybdenum and titanium (MoTi), but are not limited to these materials.

The cap source electrode 153 prevents the upper surface of the upper source electrode 152 from being corroded. The cap drain electrode 163 prevents the upper surface of the upper drain electrode 162 from being corroded. The cover auxiliary electrode 173 prevents the upper surface of the upper auxiliary electrode 172 from being corroded. Therefore, the oxidation degree in each of the cover source electrode 153, the cover drain electrode 163, and the cover auxiliary electrode 173 is lower than that in each of the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172. Further, corrosion resistance in each of the cap source electrode 153, the cap drain electrode 163, and the cap auxiliary electrode 173 is superior to that in each of the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172. For example, the cover source electrode 153, the cover drain electrode 163, and the cover auxiliary electrode 173 may be formed of a transparent conductive material such as ITO (indium tin oxide), but are not limited to such a material.

The resistance in the materials for the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172 may be lower than the resistance in the materials for the lower source electrode 151, the cap source electrode 153, the lower drain electrode 161, the cap drain electrode 163, the lower auxiliary electrode 171, and the cap auxiliary electrode 173. For example, the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172 may be formed of a metal material such as copper (Cu), but are not limited to such a material.

In order to reduce the total resistance of the source electrode 150, the thickness of the upper source electrode 152 is preferably greater than the thickness of each of the lower source electrode 151 and the cap source electrode 153, but this is not essential. Also, the thickness of the upper drain electrode 162 is preferably greater than the thickness of each of the lower drain electrode 161 and the cover drain electrode 163, but this is not necessarily so. Further, the thickness of the upper auxiliary electrode 172 is preferably greater than the thickness of each of the lower auxiliary electrode 171 and the cover auxiliary electrode 173, but this is not essential.

The structure of the thin-film transistor layer is not limited to the above structure, that is, the structure of the thin-film transistor layer may be changed into various shapes generally known to those skilled in the art. For example, the figures show a top-gate structure in which the gate electrode 130 is disposed on the active layer 126, but this is not required. That is, a bottom gate structure in which the gate electrode 130 is disposed under the active layer 126 may be provided.

A passivation layer 175 is disposed on the source electrode 150, the drain electrode 160, and the auxiliary electrode 170, and then a planarization layer 178 is disposed on the passivation layer 175. The passivation layer 175 protects the thin film transistor, and the passivation layer 175 extends from the active area AA to the pad area PA. The passivation layer 175 is formed of an inorganic insulating material, such as a silicon oxide film (SiOx) or a silicon nitride film (SiNx), but is not limited thereto.

The planarization layer 178 is provided to planarize the upper surface of the substrate 100 having the thin film transistor. The planarization layer 178 may be formed of an organic insulating material, for example, acryl resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, etc., but is not limited thereto. An anode electrode 180 and an eave structure 190 are disposed on the planarization layer 178.

A fifth contact hole CH5 for exposing the source electrode 150 is provided in the passivation layer 175 and the planarization layer 178, and the anode electrode 180 is connected to the source electrode 150 via the fifth contact hole CH 5. The fifth contact hole CH5 may expose the drain electrode 160 and the anode electrode 180 may be connected with the drain electrode 160 according to a driving mode.

A sixth contact hole CH6 for exposing the auxiliary electrode 170 is provided in the passivation layer 175 and the planarization layer 178. The eave structure 190 extends to the inside of the sixth contact hole CH6, wherein one end of the eave structure 190 protrudes in parallel with the interface between the passivation layer 175 and the planarization layer 178. In more detail, the lower surface of one end (first portion) of the eave structure 190 is disposed at the same height as the interface between the passivation layer 175 and the planarization layer 178. That is, the eave structure 190 (second portion) extends along the side surface of the planarization layer 178 disposed inside the sixth contact hole CH6, whereas the eave structure 190 does not extend along the side surface of the passivation layer 175 disposed inside the sixth contact hole CH6, whereby the contact space C may be prepared under one end of the eave structure 190. In an embodiment of the present invention, the lower surface of the first portion and the interface between the passivation layer 175 and the planarization layer 178 may be coplanar.

The anode electrode 180 and the eave structure 190 (the third portion on the planarization layer 178) may be disposed in the same layer and may be formed of the same material. In this case, the anode electrode 180 and the eave structure 190 may be simultaneously manufactured through the same process, but are not necessarily required. The eave structure 190 may be formed directly on the passivation layer 175 by removing the planarization layer 178 under the eave structure 190. In the embodiment of the present invention, there is a contact space C between the auxiliary electrode 170 and the first portion of the eave structure 190.

The anode electrode 180 may include a lower anode electrode 181, an upper anode electrode 182, and a cover anode electrode 183. The eave structure 190 may include a lower eave structure 191, an upper eave structure 192, and a cap eave structure 193. The lower anode electrode 181 and the lower eave structure 191 may be formed of the same material. The upper anode electrode 182 and the upper eave structure 192 may be formed of the same material. The cap anode electrode 183 and the cap eave structure 193 may be formed of the same material.

The lower anode electrode 181 enhances the adhesive strength between the planarization layer 178 and the upper anode electrode 182, and the lower anode electrode 181 prevents the lower surface of the upper anode electrode 182 from being corroded. Also, the lower eaves structure 191 enhances the adhesive strength between the planarization layer 178 and the upper eaves structure 192, and the lower eaves structure 191 prevents the lower surface of the upper eaves structure 192 from being corroded. Accordingly, the degree of oxidation in each of the lower anode electrode 181 and the lower eave structure 191 may be lower than that in each of the upper anode electrode 182 and the upper eave structure 192, and the corrosion resistance in each of the lower anode electrode 181 and the lower eave structure 191 may be superior to that in each of the upper anode electrode 182 and the upper eave structure 192. For example, the lower anode electrode 181 and the lower eave structure 191 may be formed of an alloy of molybdenum and titanium (MoTi), but are not limited to these materials.

The upper anode electrode 182 is disposed between the lower anode electrode 181 and the cap anode electrode 183, and the upper eave structure 192 is disposed between the lower eave structure 191 and the cap eave structure 193. The electrical resistance in the materials used for the upper anode electrode 182 and the upper eave structure 192 may be lower than the electrical resistance in the materials used for the lower anode electrode 181, the cap anode electrode 183, the lower eave structure 191, and the cap eave structure 193. For example, the upper anode electrode 182 and the upper eaves structure 192 may be formed of a metal material such as silver (Ag), but are not limited to such a material.

In order to reduce the total resistance of the anode electrode 180, the thickness of the upper anode electrode 182 is preferably greater than the thickness of each of the lower anode electrode 181 and the lid anode electrode 183, but this is not essential. The lid anode 183 prevents corrosion of the upper anode 182. Also, the cap eave structure 193 prevents corrosion of the upper eave structure 192.

The degree of oxidation in each of the cap anode electrode 183 and the cap eave structure 193 may be lower than the degree of oxidation in each of the upper anode electrode 182 and the upper eave structure 192, and the corrosion resistance in each of the cap anode electrode 183 and the cap eave structure 193 may be better than the corrosion resistance in each of the upper anode electrode 182 and the upper eave structure 192. For example, the cover anode electrode 183 and the cover eaves structure 193 may be formed of a transparent conductive material such as ITO (indium tin oxide), but are not limited to such a material.

Meanwhile, an intermediate anode electrode of a transparent conductive material such as ITO (indium tin oxide) may be additionally disposed between the lower anode electrode 181 and the upper anode electrode 182, whereby the anode electrode 180 may be formed in a four-layer structure. Also, an intermediate eave structure of a transparent conductive material such as ITO (indium tin oxide) may be additionally disposed between the lower eave structure 191 and the upper eave structure 192, whereby the eave structure 190 may be formed in a four-layer structure.

Bank layers

200a, 200b, and 200c are disposed on the anode electrode 180 and the eave structure 190, wherein the

bank layers

200a, 200b, and 200c define a pixel region. The bank layers 200a, 200b, and 200c may include first, second, and

third banks

200a, 200b, and 200 c.

The first bank 200a covers one end of the anode electrode 180, and the second bank 200b covers the other end of the anode electrode 180. In the region between the first and

second banks

200a and 200b, the upper surface of the anode electrode 180 is exposed, and light is emitted in the region of the exposed upper surface of the anode electrode 180, thereby displaying an image.

The second bank 200b extends to the inside of the sixth contact hole CH 6. In more detail, the second bank 200b may extend along the side surface of the planarization layer 178 disposed inside the sixth contact hole CH 6. The cathode electrode 220 may be easily connected to the auxiliary electrode 170 along the extended second bank 200b by a portion of the second bank 200b extending to the region of the sixth contact hole CH 6. That is, as shown in the drawing, if a portion of the second bank 200b extends to the region of the sixth contact hole CH6, the organic light emitting layer 210 and the cathode electrode 220 may be sequentially deposited on the upper surface of the extended second bank 200b, whereby the cathode electrode 220 may be easily brought into contact with the upper surface of the auxiliary electrode 170. If the second bank 200b does not extend to the region of the sixth contact hole CH6, there is a possibility that the cathode electrode 220 extending to the region of the sixth contact hole CH6 is disconnected.

In the drawing, the second bank 200b extends only to the upper surface of the passivation layer 175 inside the sixth contact hole CH6, and does not extend to the side surface of the passivation layer 175, but is not limited to this structure. The second bank 200b may extend along the side surface of the passivation layer 175 inside the sixth contact hole CH6 and may extend to a partial region of the upper surface of the auxiliary electrode 170.

The third bank 200c is disposed on the eave structure 190. The bank layers 200a, 200b, and 200c may be formed of an organic insulating material, for example, polyimide resin, acryl resin, benzocyclobutene BCB, etc., but are not limited thereto.

An organic light emitting layer 210 is disposed on the

bank layers

200a, 200b, and 200c, and a cathode electrode 220 is disposed on the organic light emitting layer 210. The organic light emitting layer 210 is in contact with the anode electrode 180 in a region between the first and second banks 220a and 220 b. Further, the organic light emitting layer 210 is in contact with a partial area of the upper surface of the auxiliary electrode 170 while the organic light emitting layer 210 extends to the area of the sixth contact hole CH6 along the second bank 200 b. Thus, contact between the cathode electrode 220 and the upper surface of the auxiliary electrode 170 is easily achieved.

In this case, the organic light emitting layer 210 is not disposed in the contact space C under the eave structure 190. Thus, the upper surface of the auxiliary electrode 170 is exposed in the contact space C. The organic light emitting layer 210 may be manufactured by a deposition process using a deposition material having excellent straightness, for example, an evaporation process. Thus, in the deposition process of the organic light emitting layer 210, the organic light emitting layer 210 is not deposited in the contact space C under the eave structure 190.

The organic light emitting layer 210 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. The structure of the organic light emitting layer 210 may be changed into various shapes generally known to those skilled in the art.

The cathode electrode 220 is disposed in the light emitting surface, whereby the cathode electrode 220 is formed of a transparent conductive material having a high resistance. In order to reduce the resistance of the cathode electrode 220, the cathode electrode 220 is connected to the auxiliary electrode 170. In more detail, the cathode electrode 220 extends to the region of the sixth contact hole CH 6. In particular, the cathode electrode 220 extends to the inside of the contact space C, and the extended cathode electrode 220 is in contact with the upper surface of the exposed auxiliary electrode 170. The cathode electrode 220 may be manufactured by a deposition process using a deposition material having poor straightness, for example, a sputtering process. Thus, in the deposition process of the cathode electrode 220, the cathode electrode 220 may be deposited in the contact space C.

According to an embodiment of the present invention, the cathode electrode 220 is electrically connected to the auxiliary electrode 170 in the contact space C under the eave structure 190, thereby eliminating the need for the reverse tapered partition structure of the related art. That is, the problem associated with the collapse or falling off of the partition can be overcome.

An encapsulation layer for preventing moisture from penetrating may be additionally disposed on the cathode electrode 220. The encapsulation layer may fill in the contact space C. The encapsulation layer may be formed of various materials commonly known to those skilled in the art.

An opposite substrate provided with a color filter for each pixel may be additionally provided on the cathode electrode 220. In this case, white light may be emitted from the organic light emitting layer 210.

The structure of the pad area PA on the substrate 100 will be described in detail below.

The buffer layer 125 is disposed on the substrate 100, the gate insulating film 127 is disposed on the buffer layer 125, the signal pad 300 is disposed on the gate insulating film 127, the interlayer insulating layer 140 is disposed on the signal pad 300, the first pad electrode 400 is disposed on the interlayer insulating layer 140, and the passivation layer 175 is disposed on the first pad electrode 400.

The buffer layer 125 extends from the active area AA.

The gate insulating film 127 in the pad area PA corresponds to the gate insulating film 127 disposed on the lower surface of the gate electrode 130 in the effective area AA. The gate insulating film 127 and the signal pad 300 may have the same pattern.

The signal pad 300 may be formed of the same material as the gate electrode 130 in the active area AA. In this case, the signal pad 300 and the gate electrode 130 may be simultaneously manufactured through the same process.

Signal pads 300 may include lower signal pads 301 and upper signal pads 302. The lower signal pad 301 is formed of the same material as the lower gate electrode 131, and the lower signal pad 301 prevents corrosion of the upper signal pad 302. The upper signal pad 302 is formed of the same material as the upper gate electrode 132 described above, and the upper signal pad 302 reduces the resistance of the signal pad 300. The thickness of upper signal pad 302 is preferably, but not necessarily, greater than the thickness of lower signal pad 301 in order to reduce the overall resistance of signal pad 300.

The interlayer insulating layer 140 extends from the active area AA. A seventh contact hole CH7 is provided in the interlayer insulating layer 140, and the signal pad 300 is exposed through the seventh contact hole CH 7.

The first pad electrode 400 is connected to the signal pad 300 via the seventh contact hole CH 7. The material for the first pad electrode 400 may be the same as that of the source electrode 150, the drain electrode 160, and the auxiliary electrode 170 in the active area AA. In this case, the first pad electrode 400, the source electrode 150, the drain electrode 160, and the auxiliary electrode 170 may be simultaneously manufactured through the same process.

The first pad electrode 400 may include a lower first pad electrode 401, an upper first pad electrode 402, and a cover first pad electrode 403. The lower first pad electrode 401 may be formed of the same material as the lower source electrode 151, the lower drain electrode 161, and the lower auxiliary electrode 171 in the aforementioned effective area AA. The upper first pad electrode 402 may be formed of the same material as the upper source electrode 152, the upper drain electrode 162, and the upper auxiliary electrode 172 in the aforementioned active area AA. The cover first pad electrode 403 may be formed of the same material as the cover source electrode 153, the cover drain electrode 163, and the cover auxiliary electrode 173 in the aforementioned effective area AA. The lower first pad electrode 401 prevents corrosion of the upper first pad electrode 402 and also prevents corrosion of the upper signal pad 302.

The upper first pad electrode 402 lowers the resistance of the first pad electrode 400. In order to reduce the total resistance of the first pad electrode 400, the thickness of the upper first pad electrode 402 is preferably greater than the thickness of each of the lower first pad electrode 401 and the cover first pad electrode 403, but this is not essential. The cap first pad electrode 403 prevents corrosion of the upper first pad electrode 402.

The passivation layer 175 extends from the active area AA. An eighth contact hole CH8 is provided in the passivation layer 175, and the first pad electrode 400 is exposed to the outside through the eighth contact hole CH 8.

In this case, the side surface of the first pad electrode 400 is covered by the passivation layer 175, so that the side surface of the first pad electrode 400 can be prevented from being corroded. Further, even if the upper surface of the first pad electrode 400 is exposed to the outside, the cap portion first pad electrode 403, which is excellent in corrosion resistance, is exposed to the outside, so that corrosion in the upper surface of the first pad electrode 400 can be prevented.

As shown in fig. 2B, an active area AA and a pad area PA are prepared on the substrate 100, and a low voltage line (VSS)120 extends from the pad area AA to the active area AA.

The low voltage line (VSS)120 is connected to the auxiliary electrode 170 through the fourth contact hole CH4, and the auxiliary electrode 170 is connected to the cathode electrode 220 inside the sixth contact hole CH 6. The cathode electrode 220 is formed in the entire active area AA.

The fourth contact hole CH4 and the sixth contact hole CH6 may be disposed at each single pixel, but are not limited to this structure.

Fig. 3 is a cross-sectional view illustrating an Organic Light Emitting Display (OLED) device according to another embodiment of the present invention. The structure of the pad region PA, the structure of the sixth contact hole CH6 region, the first pad electrode 400, the source electrode 150, the drain electrode 160, and the auxiliary electrode 170 in the organic light emitting display device according to another embodiment of the present invention shown in fig. 3 are different from those in the organic light emitting display device shown in fig. 2. Thus, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Hereinafter, the pad area PA will be described in detail as follows.

As shown in fig. 3, the buffer layer 125 is disposed on the pad region PA of the substrate 100, the gate insulating film 127 is disposed on the buffer layer 125, the signal pad 300 is disposed on the gate insulating film 127, the interlayer insulating layer 140 is disposed on the signal pad 300, the first pad electrode 400 is disposed on the interlayer insulating layer 140, and the second pad electrode 500 is disposed on the first pad electrode 400, wherein the first pad electrode 400 is connected to the signal pad 300 via the seventh contact hole CH 7.

One difference of the organic light emitting display device according to another embodiment of the present invention shown in fig. 3 from the aforementioned organic light emitting display device shown in fig. 2 is that the passivation layer 175 is not disposed on the first pad electrode 400. In the case of an organic light emitting display device according to another embodiment of the present invention shown in fig. 3, the second pad electrode 500 is disposed on the first pad electrode 400.

The second pad electrode 500 covers the upper surface and the side surface of the first pad electrode 400, thereby preventing corrosion of the first pad electrode 400. That is, the upper first pad electrode 402 is covered by the second pad electrode 500. Unlike the aforementioned organic light emitting display device shown in fig. 2, the organic light emitting display device shown in fig. 3 includes a first pad electrode 400 having a lower first pad electrode 401 and an upper first pad electrode 402. In the organic light emitting display device shown in fig. 3, an additional cover portion first pad electrode 403 is not required on the upper portion first pad electrode 402. Accordingly, the source electrode 150 includes a lower source electrode 151 and an upper source electrode 152, the drain electrode 160 includes a lower drain electrode 161 and an upper drain electrode 162, and the auxiliary electrode 170 includes a lower auxiliary electrode 171 and an upper auxiliary electrode 172.

The second pad electrode 500 may be formed of the same material as the lower anode electrode 181 and the lower eave structure 191 in the aforementioned effective area AA. Accordingly, the second pad electrode 500, the lower anode electrode 181, and the lower eave structure 191 may be simultaneously manufactured through the same process.

In addition, referring to fig. 3, the second bank 220b may extend to the upper surface of the auxiliary electrode 170 along the side surfaces of the passivation layer 175 and the planarization layer 178 inside the aforementioned sixth contact hole CH 6. Accordingly, the organic light emitting layer 210 may extend along the second bank 220b to the inside of the sixth contact hole CH6 and further to the upper surface of the auxiliary electrode 170. As a result, the cathode electrode 220 extends to the inside of the sixth contact hole CH6 along the organic light emitting layer 210, whereby the cathode electrode 220 is connected with the auxiliary electrode 170 in the contact space C.

Fig. 4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention. The structure of the pad region PA, the first pad electrode 400, the source electrode 150, the drain electrode 160, and the auxiliary electrode 170 in the organic light emitting display device according to another embodiment of the present invention shown in fig. 4 are different from those in the organic light emitting display device shown in fig. 2. Thus, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Hereinafter, the pad area PA will be described in detail as follows.

As shown in fig. 4, the buffer layer 125 is disposed on the pad region PA of the substrate 100, the gate insulating film 127 is disposed on the buffer layer 125, the signal pad 300 is disposed on the gate insulating film 127, the interlayer insulating layer 140 is disposed on the signal pad 300, the first pad electrode 400 is disposed on the interlayer insulating layer 140, and the second pad electrode 500 is disposed on the first pad electrode 400, wherein the first pad electrode 400 is connected to the signal pad 300 via the seventh contact hole CH 7.

One difference of the organic light emitting display device according to another embodiment of the present invention shown in fig. 4 from the aforementioned organic light emitting display device shown in fig. 2 is that the passivation layer 175 is not disposed on the first pad electrode 400. In the case of an organic light emitting display device according to another embodiment of the present invention shown in fig. 4, the second pad electrode 500 is disposed on the first pad electrode 400.

The second pad electrode 500 covers the upper surface and the side surface of the first pad electrode 400, thereby preventing corrosion of the first pad electrode 400. That is, the upper first pad electrode 402 is covered by the second pad electrode 500. Unlike the aforementioned organic light emitting display device shown in fig. 2, the organic light emitting display device shown in fig. 4 includes a first pad electrode 400 having a lower first pad electrode 401 and an upper first pad electrode 402. In the organic light emitting display device shown in fig. 4, an additional cover portion first pad electrode 403 is not required on the upper portion first pad electrode 402. Accordingly, the source electrode 150 includes a lower source electrode 151 and an upper source electrode 152, the drain electrode 160 includes a lower drain electrode 161 and an upper drain electrode 162, and the auxiliary electrode 170 includes a lower auxiliary electrode 171 and an upper auxiliary electrode 172.

The second pad electrode 500 may be formed of the same material as the anode electrode 180 and the eave structure 190 in the aforementioned active area AA. Accordingly, the second pad electrode 500, the anode electrode 180, and the eave structure 190 may be simultaneously manufactured through the same process.

The second pad electrode 500 may include a lower second pad electrode 501, an upper second pad electrode 502, and a cover second pad electrode 503. The lower second pad electrode 501 may be formed of the same material as the lower anode electrode 181 and the lower eave structure 191, the upper second pad electrode 502 may be formed of the same material as the upper anode electrode 182 and the upper eave structure 192, and the cap second pad electrode 503 may be formed of the same material as the cap anode electrode 183 and the cap eave structure 193.

Therefore, the oxidation degree in each of the lower second pad electrode 501 and the cover second pad electrode 503 may be lower than that of the upper second pad electrode 502, and the corrosion resistance in each of the lower second pad electrode 501 and the cover second pad electrode 503 may be better than that of the upper second pad electrode 502. Further, the resistance in the material for the upper second pad electrode 502 may be lower than the resistance in the material for each of the lower second pad electrode 501 and the lid second pad electrode 503. Further, the thickness of the upper second pad electrode 502 may be greater than the thickness of each of the lower second pad electrode 501 and the cover second pad electrode 503.

In addition, the passivation layer 175 and the planarization layer 178 may be sequentially disposed on one side and the other side of the first and

second pad electrodes

400 and 500 in the pad region PA. A passivation layer 175 of the pad area PA is disposed on the interlayer insulating layer 140, and a planarization layer 178 of the pad area PA is disposed on the passivation layer 175. The passivation layer 175 and the planarization layer 178 disposed in the pad area PA may be spaced apart from the first and

second pad electrodes

400 and 500. In the case of the passivation layer 175 and the planarization layer 178 disposed in the pad region PA, the planarization layer 178 is relatively thick, thereby preventing one end of the planarization layer 178 from being peeled off in the manufacturing process, thereby leaving the planarization layer 178.

Fig. 5A to 5G are sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention, which relate to the method of manufacturing the organic light emitting display device shown in fig. 2A, 2B. Therefore, the same reference numerals will be used throughout the drawings to refer to the same or like parts, and detailed description of materials in each element and structure will be omitted.

First, as shown in fig. 5A, a light-shielding layer 110 and a low voltage line (VSS)120 are patterned on an effective area AA of a substrate 100, and a buffer layer 125 is disposed on the light-shielding layer 110 and the low voltage line (VSS) 120. A buffer layer 125 is also provided on the pad area PA.

After that, the active layer 126, the gate insulating film 127 and the gate electrode 130 are patterned on the effective area AA of the buffer layer 125. The gate insulating film 127 and the signal pad 300 are simultaneously patterned on the pad area PA of the buffer layer 125.

An interlayer insulating layer 140 is disposed on the gate electrode 130 and the signal pad 300. In addition, a first contact hole CH1 and a second contact hole CH2 are provided in the interlayer insulating layer 140, thereby exposing one end and the other end of the active layer 126. In addition, a third contact hole CH3 and a fourth contact hole CH4 are provided in the interlayer insulating layer 140 and the buffer layer 125, thereby exposing the light-shielding layer 110 and the low voltage line (VSS) 120. Further, a seventh contact hole CH7 is provided in the interlayer insulating layer 140 of the pad area PA, thereby exposing the signal pad 300.

Then, the source electrode 150 is patterned on the interlayer insulating layer 140, wherein the source electrode 150 is connected with the active layer 126 through the first contact hole CH1 and is connected with the light shielding layer 110 through the third contact hole CH 3. The drain electrode 160 is patterned on the interlayer insulating layer 140, wherein the drain electrode 160 is connected with the active layer 126 through the second contact hole CH 2. In addition, the auxiliary electrode 170 is patterned on the interlayer insulating layer 140, wherein the auxiliary electrode 170 is connected to the low voltage line (VSS)120 through the fourth contact hole CH 4. In addition, the first pad electrode 400 is patterned on the interlayer insulating layer 140, wherein the first pad electrode 400 is connected with the signal pad 300 through the seventh contact hole CH 7.

Then, as shown in fig. 5B, a passivation layer 175 is disposed on the source electrode 150, the drain electrode 160, the auxiliary electrode 170, and the first pad electrode 400, and the planarization layer 178 is patterned on the passivation layer 175.

The planarization layer 178 is not disposed on a partial region of the source electrode 150. The planarization layer 178 is disposed in the following manner: the thickness (t1) of the planarization layer 178 on the partial region of the auxiliary electrode 170 and the pad region PA is relatively small, and the thickness (t2) of the planarization layer 178 on the remaining region is relatively large.

Then, as shown in fig. 5C, a fifth contact hole CH5 is formed by removing the passivation layer 175 on a partial region of the source electrode 150 using the planarization layer 178 as a mask, thereby exposing the source electrode 150 through the fifth contact hole CH 5.

By ashing the planarization layer 178, the planarization layer 178 is remained only in the region having the relatively large thickness (t2), and the planarization layer 178 is removed from the region having the relatively small thickness (t1), thereby exposing the auxiliary electrode 170 and the passivation layer 175 on the pad region PA. In this case, the sixth contact hole CH6 region is prepared by the planarization layer 178 partially removed from the region on the auxiliary electrode 170.

Then, as shown in fig. 5D, the anode electrode 180 and the eave structure 190 are patterned on the planarization layer 178. The anode electrode 180 is patterned to be connected with the source electrode 150 via the fifth contact hole CH 5. The eave structure 190 extends to the sixth contact hole CH6 area and further extends to a partial area of the upper surface of the exposed passivation layer 175.

As shown in fig. 5E, a bank layer 200 is disposed on the anode electrode 180 and the eave structure 190. The bank layer 200 is disposed on the active area AA and the pad area PA. The bank layer 200 is not disposed on a partial region of the first pad electrode 400, a pixel region of the anode electrode 180, and a partial region of the auxiliary electrode 170. The bank layer 200 is disposed in the following manner: the thickness (h1) of the bank layer 200 in the pad region PA and the end region of the sixth contact hole CH6 is relatively small, and the thickness (h2) of the bank layer 200 in the remaining region is relatively large.

The first pad electrode 400 and the auxiliary electrode 170 are exposed by removing the passivation layer 175 using the bank layer 200 as a mask. In this case, the passivation layer 175 disposed under the eave structure 190 is also removed, thereby preparing the contact space C. In addition, an eighth contact hole CH8 is formed on the first pad electrode 400.

Thereafter, as shown in fig. 5F, the bank layer 200 is ashed such that the bank layer 200 having a relatively small thickness (h1) is removed and only the bank layer 200 having a relatively large thickness (h2) remains, thereby forming the first, second, and

third banks

200a, 200b, and 200 c.

As shown in fig. 5G, an organic light emitting layer 210 is formed on the first, second, and

third banks

200a, 200b, and 200c in the active area AA, and a cathode electrode 220 is formed on the organic light emitting layer 210. The organic light emitting layer 210 may be manufactured by an evaporation method using a deposition material having excellent straightness. Thus, the organic light emitting layer 210 is not deposited in the contact space C under the eave structure 190.

The cathode electrode 220 may be manufactured by a sputtering method using a deposition material having poor straightness. Thus, the cathode electrode 220 may be deposited in the contact space C. Therefore, the cathode electrode 220 is connected to the auxiliary electrode 170 in the contact space C.

Fig. 6A to 6G are sectional views illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display device shown in fig. 3. Therefore, the same reference numerals will be used throughout the drawings to refer to the same or like parts, and detailed description of materials in each element and structure will be omitted.

First, the process of fig. 6A to 6C is substantially the same as the process of fig. 5A to 5C, and thus a detailed description of the process of fig. 6A to 6C will be omitted. However, one difference of the process of fig. 6A from the process of fig. 5A is that the cap first pad electrode 403, the cap source electrode 153, the cap drain electrode 163, and the cap auxiliary electrode 173 are not provided.

Then, as shown in fig. 6D, an electrode layer 5 including a lower layer 1, an upper layer 2, and a cap layer 3 is disposed on the planarization layer 178, and a photoresist layer PR is patterned on the electrode layer 5. The electrode layer 5 is provided to form an anode electrode 180 and an eave structure 190.

The photoresist layer PR is not disposed on the pad region PA other than the first pad electrode 400, the sixth contact hole CH6 region, and the adjacent region of the sixth contact hole CH6 region. The photoresist layer PR is arranged in the following manner: the thickness (t1) of the photoresist layer PR on the first pad electrode 400 is relatively small, and the thickness (t2) of the photoresist layer PR on the remaining region is relatively large.

As shown in fig. 6E, the electrode layer 5 is patterned using the photoresist layer PR as a mask, thereby forming an anode electrode 180 and an eave structure 190. In this case, the electrode layer 5 and the passivation layer 175 disposed under the electrode layer 5 are removed from the region between the anode electrode 180 and the eave structure 190, so that the sixth contact hole CH6 may be formed and the auxiliary electrode 170 may be exposed. That is, the contact space C is prepared under the eave structure 190 inside the sixth contact hole CH 6. Further, a part of the electrode layer 5 on the pad area PA is removed.

As shown in fig. 6F, in the case where the remaining photoresist layer PR is used as a mask after the ashing process of the photoresist layer PR, the upper layer 2 and the cap layer 3 of the electrode layer 5 remaining in the pad region PA are removed, so that the second pad electrode 500 of the lower layer 1 may be formed and the remaining photoresist layer PR is removed.

By ashing the photoresist layer PR, the photoresist layer PR having a relatively small thickness (t1) is removed, and only the photoresist layer PR having a relatively large thickness (t2) remains. Thus, when the upper layer 2 and the cover layer 3 are removed from the pad area PA, the anode electrode 180 and the eave structure 190 are not removed from the active area AA.

Then, as shown in fig. 6G,

bank layers

200a, 200b, and 200c are formed on the anode electrode 180 and the eave structure 190, an organic light emitting layer 210 is formed on the first, second, and

third banks

200a, 200b, and 200c in the active area AA, and a cathode electrode 220 is formed on the organic light emitting layer 210.

The bank layers 200a, 200b, and 200c may include a first bank layer 200a for covering one end of the anode electrode 180, a second bank layer 200b for covering the other end of the anode electrode 180 and extending to a partial area of the upper surface of the auxiliary electrode 170 along the passivation layer 175 and the planarization layer 178 inside the sixth contact hole CH6, and a third bank layer 200c disposed on the eave structure 190.

The organic light emitting layer 210 is not deposited in the contact space C under the eave structure 190. The cathode electrode 220 is deposited in the contact space C and connected to the auxiliary electrode 170.

Fig. 7A to 7F are sectional views illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display device shown in fig. 4. Therefore, the same reference numerals will be used throughout the drawings to refer to the same or like parts, and detailed description of materials in each element and structure will be omitted.

First, the process of fig. 7A is substantially the same as the process of fig. 5A, and thus a detailed description of the process of fig. 7A will be omitted. However, one difference of the process of fig. 7A from the process of fig. 5A is that the cap first pad electrode 403, the cap source electrode 153, the cap drain electrode 163, and the cap auxiliary electrode 173 are not provided.

Then, as shown in fig. 7B, a passivation layer 175 is disposed on the source electrode 150, the drain electrode 160, the auxiliary electrode 170, and the first pad electrode 400, and the planarization layer 178 is patterned on the passivation layer 175.

The planarization layer 178 is not disposed on a partial region of the source electrode 150 and the pad region PA other than one side and the other side of the first pad electrode 400. The planarization layer 178 is disposed in the following manner: the thickness (t1) of the planarization layer 178 on a partial region of the auxiliary electrode 170 is relatively small, and the thickness (t2) of the planarization layer 178 on the remaining region is relatively large.

In particular, if the planarization layer 178 having a relatively small thickness (t1) is provided at one side and the other side of the first pad electrode 400, the planarization layer 178 may be peeled off from the adjoining region of the first pad electrode 400. Thus, the planarization layer 178 has a relatively large thickness at one side and the other side of the first pad electrode 400 (t 2).

Then, as shown in fig. 7C, the passivation layer 175 on a partial region of the source electrode 150 and the passivation layer 175 on a partial region of the pad region PA may be removed using the planarization layer 178 as a mask. Thus, the fifth contact hole CH5 is formed on the source electrode 150, thereby exposing the source electrode 150 via the fifth contact hole CH5 and also exposing the upper surface and the side surfaces of the first pad electrode 400.

By ashing the planarization layer 178, the planarization layer 178 is remained only in the region having the relatively large thickness (t2), and the planarization layer 178 is removed from the region having the relatively small thickness (t1), thereby exposing the passivation layer 175 on the auxiliary electrode 170. In this case, a sixth contact hole CH6 region is prepared on the auxiliary electrode 170.

Then, as shown in fig. 7D, the anode electrode 180 and the eave structure 190 are patterned on the planarization layer 178 of the active area AA. In the pad region PA, the second pad electrode 500 is patterned on the first pad electrode 400.

The anode electrode 180 is connected to the source electrode 150 through the fifth contact hole CH 5. The eave structure 190 extends to the sixth contact hole CH6 area and further extends to a partial area of the upper surface of the exposed passivation layer 175. The second pad electrode 500 covers the upper surface and the side surface of the first pad electrode 400.

Then, as shown in fig. 7E,

bank layers

200a, 200b, and 200c are formed on the anode electrode 180 and the eave structure 190. The bank layers 200a, 200b, and 200c may include a first bank layer 200a for covering one end of the anode electrode 180, a second bank layer 200b for covering the other end of the anode electrode 180 and extending along a side surface of the planarization layer 178 inside the sixth contact hole CH6, and a third bank layer 200c disposed on the eave structure 190.

Thereafter, the passivation layer 175 exposed through the sixth contact hole CH6 region is removed using the

bank layers

200a, 200b, and 200C as masks, so that a contact space C may be prepared under the eave structure 190. Then, the structure shown in the figure is obtained by ashing the

bank layers

200a, 200b, and 200 c.

Then, as shown in fig. 7F, an organic light emitting layer 210 is formed on the first, second, and

third banks

200a, 200b, and 200c in the effective area AA, and a cathode electrode 220 is formed on the organic light emitting layer 210. The organic light emitting layer 210 is not deposited in the contact space C under the eave structure 190, and the cathode electrode 220 is deposited in the contact space C and connected to the auxiliary electrode 170.

As described above, the top emission type organic light emitting display device according to the embodiment of the present invention has been described, however, it is not limited to this type on the premise of maintaining the technical characteristics of the present invention. For example, in the present invention, light may be emitted from the entire area of the pixel area, but is not necessarily required. Light may not be emitted from the entire pixel region but may be emitted from a partial region of the pixel region. That is, light may be emitted from a partial region of the pixel region, and the remaining region of the pixel region may be transparent, thereby obtaining a transparent organic light emitting display device.

According to the present invention, the cathode electrode 220 is electrically connected to the auxiliary electrode 170 in the contact space C under the eave structure 190. Thus, the reverse tapered partition structure of the related art is not required, that is, the problems associated with collapse or falling-off of the partition can be overcome.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims

1. An organic light emitting display device comprising:

a substrate having an active area and a pad area;

an anode electrode on the active area of the substrate;

a bank layer on the anode electrode to define a pixel region;

an organic light emitting layer on the bank layer and connected to the anode electrode;

a cathode electrode on the organic light emitting layer;

an eave structure located below the bank layer and spaced apart from the anode electrode;

a planarization layer under the anode electrode;

a passivation layer located under the planarization layer; and

an auxiliary electrode located under the eave structure and electrically connected to the cathode electrode,

wherein the cathode electrode extends to a contact space below the eave structure, and the cathode electrode is connected with the auxiliary electrode in the contact space, and

wherein one end of the eave structure protrudes in parallel with an interface between the passivation layer and the planarization layer such that the contact space is disposed directly below the one end of the eave structure.

2. The organic light emitting display device according to claim 1, wherein a contact hole exposing the auxiliary electrode is provided in the planarization layer and the passivation layer, and the contact space is connected to the contact hole.

3. The organic light emitting display device according to claim 2, wherein the bank layer extends along a side surface of the planarization layer inside the contact hole.

4. The organic light emitting display device according to claim 3, wherein the bank layer extends to the auxiliary electrode along a side surface of the passivation layer inside the contact hole.

5. The organic light emitting display device according to claim 3, wherein the organic light emitting layer extends to an upper surface of the auxiliary electrode along the bank layer inside the contact hole, and the cathode electrode extends to the contact space along the organic light emitting layer inside the contact hole.

6. The organic light-emitting display device according to claim 2, wherein the eave structure extends along a side surface of the planarization layer inside the contact hole.

7. An organic light-emitting display device according to claim 1, wherein the eave structure is formed of the same material as the anode electrode, and the eave structure and the anode electrode are located in the same layer.

8. The organic light emitting display device according to claim 1, further comprising a low voltage line which is located under the auxiliary electrode and is connected to the auxiliary electrode via an additional contact hole.

9. The organic light emitting display device of claim 8, further comprising:

a source or drain electrode located below and connected to the anode electrode, and a light shielding layer located below the source or drain electrode,

wherein the auxiliary electrode is formed of the same material as the source or drain electrode, and the auxiliary electrode and the source or drain electrode are disposed in the same layer, and

the low voltage line is formed of the same material as the light-shielding layer, and the low voltage line and the light-shielding layer are disposed in the same layer.

10. The organic light emitting display device of claim 1, further comprising:

a signal pad on a pad region of the substrate;

a first pad electrode on the signal pad and connected with the signal pad via an additional contact hole; and

a passivation layer exposing a region of an upper surface of the first pad electrode and covering a side surface of the first pad electrode,

wherein the first pad electrode includes a lower first pad electrode on the signal pad, an upper first pad electrode on the lower first pad electrode, and a cover first pad electrode on the upper first pad electrode and exposed to the outside,

wherein a degree of oxidation of each of the lower first pad electrode and the cover first pad electrode is lower than a degree of oxidation of the upper first pad electrode, and an electrical resistance of a material for the upper first pad electrode is lower than an electrical resistance of a material for each of the lower first pad electrode and the cover first pad electrode.

11. The organic light emitting display device of claim 1, further comprising:

a signal pad on a pad region of the substrate;

a second pad electrode covering an upper surface and a side surface of the first pad electrode,

wherein the first pad electrode includes a lower first pad electrode on the signal pad and an upper first pad electrode on the lower first pad electrode, and

wherein a degree of oxidation of the lower first pad electrode is lower than a degree of oxidation of the upper first pad electrode, and an electrical resistance of the upper first pad electrode is lower than an electrical resistance of the lower first pad electrode.

12. The organic light emitting display device of claim 11, further comprising a passivation layer and a planarization layer in the pad region, the passivation layer and the planarization layer being spaced apart from the first and second pad electrodes.

13. A method of manufacturing an organic light emitting display device, the method comprising:

providing an auxiliary electrode on the substrate;

disposing a passivation layer on the auxiliary electrode, and disposing a planarization layer on the passivation layer;

arranging an anode electrode and an eave structure on the planarization layer;

providing a contact hole in the passivation layer and the planarization layer to expose the auxiliary electrode through the contact hole;

arranging a bank layer on the anode electrode and the eave structure;

an organic light emitting layer is provided on the anode electrode; and

a cathode electrode is disposed on the organic light emitting layer,

wherein the cathode electrode extends to a contact space under the eave structure, and the extended cathode electrode is connected with the exposed auxiliary electrode, and

14. The method according to claim 13, wherein the disposing of the bank layer is performed after disposing the anode electrode and the eave structure, and the exposing of the auxiliary electrode is performed by using the bank layer as a mask.

15. The method of claim 14, further comprising:

disposing a first pad electrode on the substrate, wherein the disposing of the first pad electrode and the disposing of the auxiliary electrode are performed simultaneously, and the planarization layer is additionally disposed on the first pad electrode; and

exposing the first pad electrode by removing the passivation layer on the first pad electrode, wherein the exposing of the first pad electrode and the exposing of the auxiliary electrode are performed simultaneously.

16. The method of claim 14, further comprising disposing a first pad electrode on the substrate, wherein the disposing of the first pad electrode and the disposing of the auxiliary electrode are performed simultaneously, and the passivation layer and the planarization layer are located at one side and the other side of the first pad electrode, and

wherein disposing the anode electrode and the eave structure includes disposing a second pad electrode on the first pad electrode.

17. The method according to claim 13, wherein the disposing of the anode electrode and the eave structure and the exposing of the auxiliary electrode are performed simultaneously, and

the setting of the bank layer is performed after exposing the auxiliary electrode.

18. The method of claim 17, further comprising:

providing a first pad electrode on the substrate, wherein the provision of the first pad electrode and the provision of the auxiliary electrode are performed simultaneously, and the provision of the anode electrode and the eave structure includes providing an electrode layer having a plurality of layers on the first pad electrode; and

after the anode electrode and the eave structure are provided, a second pad electrode is provided on the first pad electrode by removing a portion of the electrode layer of the plurality of layers.

19. An organic light emitting display device comprising:

a substrate having an active area and a pad area;

an anode electrode on the active area of the substrate;

a bank layer on the anode electrode to define a pixel region;

a cathode electrode on the organic light emitting layer;

an eave structure located under the bank layer and having a first portion protruding from a second portion to be parallel to the substrate and a second portion not parallel to the substrate;

the auxiliary electrode is positioned below the eave structure and electrically connected with the cathode electrode; and

a contact space between the auxiliary electrode and the first portion of the eave structure,

wherein the contact space is provided directly below the first portion of the eave structure.

20. The organic light emitting display device according to claim 19, further comprising a planarization layer under the anode electrode, and a passivation layer under the planarization layer,

wherein a lower surface of the first portion is coplanar with an interface between the passivation layer and the planarization layer.