TWI677813B - Active device substrate - Google Patents

Active device substrate Download PDF

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Publication number
TWI677813B
TWI677813B TW107143033A TW107143033A TWI677813B TW I677813 B TWI677813 B TW I677813B TW 107143033 A TW107143033 A TW 107143033A TW 107143033 A TW107143033 A TW 107143033A TW I677813 B TWI677813 B TW I677813B
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Taiwan
Prior art keywords
contact window
signal line
touch
contact
insulating layer
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TW107143033A
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Chinese (zh)
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TW202022571A (en
Inventor
黃淑惠
Shu-Hui Huang
林敬舜
Ching-Shun Lin
謝秀春
Hsiu-Chun Hsieh
陳亦偉
Yi-Wei Chen
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友達光電股份有限公司
Au Optronics Corporation
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Priority to TW107143033A priority Critical patent/TWI677813B/en
Priority to CN201910492939.7A priority patent/CN110164877B/en
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Publication of TWI677813B publication Critical patent/TWI677813B/en
Publication of TW202022571A publication Critical patent/TW202022571A/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

一種主動元件基板,包括基底、主動元件、觸控訊號線、第一絕緣層、觸控電極、第二絕緣層、畫素電極以及第一橋接元件。觸控訊號線設置於基底上。第一絕緣層設置於觸控訊號線上且具有與觸控訊號線之接觸部重疊的第一接觸窗。觸控電極設置於第一絕緣層上且具有接觸部。第二絕緣層設置於觸控電極上且具有第二接觸窗。第二接觸窗與觸控電極的接觸部及第一絕緣層的第一接觸窗重疊。第一橋接元件設置於第二絕緣層上且與畫素電極分離。第一橋接元件透過第一接觸窗及第二接觸窗與觸控電極的接觸部及觸控訊號線的接觸部電性連接。An active element substrate includes a base, an active element, a touch signal line, a first insulation layer, a touch electrode, a second insulation layer, a pixel electrode, and a first bridge element. The touch signal line is disposed on the substrate. The first insulating layer is disposed on the touch signal line and has a first contact window overlapping the contact portion of the touch signal line. The touch electrode is disposed on the first insulating layer and has a contact portion. The second insulating layer is disposed on the touch electrode and has a second contact window. The second contact window overlaps the contact portion of the touch electrode and the first contact window of the first insulating layer. The first bridge element is disposed on the second insulating layer and is separated from the pixel electrode. The first bridge element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window.

Description

主動元件基板Active element substrate

本發明是有關於一種基板,且特別是有關於一種主動元件基板。The present invention relates to a substrate, and more particularly, to an active element substrate.

一般而言,液晶顯示器可分為非晶矽薄膜電晶體(amorphous silicon thin film transistor)液晶顯示器及低溫多晶矽薄膜電晶體(low temperature poly-silicon thin film transistor)液晶顯示器等兩種。有別於傳統的非晶矽薄膜電晶體,低溫多晶矽薄膜電晶體具有較佳的電子遷移率,可製作出尺寸較小的薄膜電晶體,故能增加開口率、提昇顯示器亮度並減少電力的消耗。Generally speaking, liquid crystal displays can be divided into two types: amorphous silicon thin film transistor liquid crystal displays and low temperature poly-silicon thin film transistor liquid crystal displays. Unlike traditional amorphous silicon thin-film transistors, low-temperature polycrystalline silicon thin-film transistors have better electron mobility and can produce thin-film thin-film transistors, which can increase the aperture ratio, improve display brightness, and reduce power consumption. .

然而,在低溫多晶矽薄膜電晶體液晶顯示器的製程中,在製作畫素結構時,通常會使用到10至11道光罩製程,相較於非晶矽薄膜電晶體液晶顯示器的製程為7至8道製程,低溫多晶矽薄膜電晶體液晶顯示器必須花費較多的製程時間以及較高的成本,且製程步驟也非常繁雜。However, in the manufacturing process of low-temperature polycrystalline silicon thin film liquid crystal displays, 10 to 11 photomask processes are usually used when making pixel structures, compared with 7 to 8 processes of amorphous silicon thin film liquid crystal displays. In the manufacturing process, the low-temperature polycrystalline silicon thin film liquid crystal liquid crystal display must take more manufacturing time and higher cost, and the manufacturing steps are very complicated.

本發明提供一種主動元件基板,其可簡化製程、提升產能。The invention provides an active element substrate, which can simplify the manufacturing process and improve the production capacity.

本發明的主動元件基板包括基底、主動元件、觸控訊號線、第一絕緣層、觸控電極、第二絕緣層、畫素電極以及第一橋接元件。基底具有主動區以及主動區外的周邊區。主動元件設置於基底的主動區上。觸控訊號線設置於基底上。第一絕緣層設置於觸控訊號線上,且具有與觸控訊號線之接觸部重疊的第一接觸窗。觸控電極設置於第一絕緣層上,且具有接觸部。第二絕緣層設置於觸控電極上,且具有第二接觸窗。第二接觸窗與觸控電極的接觸部及第一絕緣層的第一接觸窗重疊。畫素電極設置於第二絕緣層上,且與主動元件電性連接。第一橋接元件設置於第二絕緣層上,且與畫素電極分離。第一橋接元件透過第一接觸窗及第二接觸窗與觸控電極的接觸部及觸控訊號線的接觸部電性連接。The active element substrate of the present invention includes a base, an active element, a touch signal line, a first insulation layer, a touch electrode, a second insulation layer, a pixel electrode, and a first bridge element. The substrate has an active area and a peripheral area outside the active area. The active element is disposed on the active area of the substrate. The touch signal line is disposed on the substrate. The first insulating layer is disposed on the touch signal line and has a first contact window overlapping with the contact portion of the touch signal line. The touch electrode is disposed on the first insulating layer and has a contact portion. The second insulating layer is disposed on the touch electrode and has a second contact window. The second contact window overlaps the contact portion of the touch electrode and the first contact window of the first insulating layer. The pixel electrode is disposed on the second insulation layer and is electrically connected to the active device. The first bridge element is disposed on the second insulating layer and is separated from the pixel electrode. The first bridge element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window.

在本發明的一實施例中,上述的第一絕緣層具有定義第一接觸窗的側壁。觸控電極之接觸部的側壁與第一絕緣層的側壁實質上切齊。In an embodiment of the present invention, the first insulating layer has a sidewall defining a first contact window. The sidewall of the contact portion of the touch electrode is substantially aligned with the sidewall of the first insulating layer.

在本發明的一實施例中,上述的第一接觸窗於基底上之垂直投影的邊緣的部分與觸控電極之接觸部於基底上之垂直投影的邊緣的部分實質上重合。In an embodiment of the present invention, a portion of the edge of the first projection window vertically projected on the substrate and a portion of the edge of the projection vertical projection of the contact portion of the touch electrode on the substrate substantially coincide.

在本發明的一實施例中,上述的觸控訊號線在第一方向上延伸。觸控電極之接觸部於基底上之垂直投影的邊緣的部分與第一方向夾有一角度α,而0 o≦α≦90 oIn an embodiment of the present invention, the touch signal line extends in a first direction. The contact portion of the touch electrode to the edge portion and the first direction vertical projection on the substrate holder at an angle α, and 0 o ≦ α ≦ 90 o.

在本發明的一實施例中,上述的主動元件基板更包括第一訊號線。第一訊號線與主動元件電性連接,且與觸控訊號線交錯。其中,第一訊號線在第二方向上延伸,而觸控電極之接觸部於基底上之垂直投影的邊緣的部分與第二方向夾有角度β,而0 o≦β≦90 oIn an embodiment of the present invention, the active device substrate further includes a first signal line. The first signal line is electrically connected to the active element and is interlaced with the touch signal line. The first signal line extends in the second direction, and the portion of the edge of the vertical projection of the contact portion of the touch electrode on the substrate is at an angle β with the second direction, and 0 o ≦ β ≦ 90 o .

在本發明的一實施例中,上述的觸控訊號線在第一方向上延伸。第二接觸窗具有第一部分及第二部分,分別與觸控電極的接觸部及第一絕緣層的第一接觸窗重疊。第二接觸窗的第一部分及第二接觸窗的第二部分在第三方向上排列,而第一方向與第三方向交錯。In an embodiment of the present invention, the touch signal line extends in a first direction. The second contact window has a first portion and a second portion, which respectively overlap the contact portion of the touch electrode and the first contact window of the first insulating layer. The first portion of the second contact window and the second portion of the second contact window are aligned in a third direction, and the first direction and the third direction are staggered.

在本發明的一實施例中,上述的主動元件基板更包括接墊以及介電層。接墊設置於周邊區。介電層設置於接墊上,且具有與接墊重疊的至少一第三接觸窗。其中,觸控訊號線設置於介電層上且具有設置於周邊區的第一端部。觸控訊號線的第一端部設置於介電層的至少一第三接觸窗中且直接地接墊電性接觸。In an embodiment of the present invention, the active device substrate further includes a pad and a dielectric layer. The pads are disposed in the peripheral area. The dielectric layer is disposed on the pad and has at least a third contact window overlapping the pad. The touch signal line is disposed on the dielectric layer and has a first end portion disposed in a peripheral region. The first end portion of the touch signal line is disposed in the at least one third contact window of the dielectric layer and directly contacts the electrical contact pad.

在本發明的一實施例中,上述的主動元件基板更包括觸控開關、介電層以及第二橋接元件。觸控開關設置於主動元件基板的周邊區。介電層設置於觸控開關上。其中,觸控訊號線設置於介電層上且具有第二端部。第一絕緣層具有分別與觸控開關之部分及觸控訊號線之第二端部重疊的第四接觸窗及第五接觸窗。第二絕緣層具有分別與第四接觸窗及第五接觸窗重疊的第六接觸窗及第七接觸窗。第二橋接元件設置於第二絕緣層上。第二橋接元件透過第一絕緣層的第四接觸窗及第二絕緣層的第六接觸窗與觸控開關的部分電性連接。第二橋接元件透過第一絕緣層的第五接觸窗及第二絕緣層的第七接觸窗與觸控訊號線的第二端部電性連接。In an embodiment of the present invention, the above-mentioned active element substrate further includes a touch switch, a dielectric layer, and a second bridge element. The touch switch is disposed in a peripheral region of the active device substrate. The dielectric layer is disposed on the touch switch. The touch signal line is disposed on the dielectric layer and has a second end portion. The first insulating layer has a fourth contact window and a fifth contact window that overlap with a portion of the touch switch and a second end portion of the touch signal line, respectively. The second insulating layer has a sixth contact window and a seventh contact window which overlap the fourth contact window and the fifth contact window, respectively. The second bridge element is disposed on the second insulating layer. The second bridge element is electrically connected to a part of the touch switch through the fourth contact window of the first insulation layer and the sixth contact window of the second insulation layer. The second bridge element is electrically connected to the second end portion of the touch signal line through the fifth contact window of the first insulation layer and the seventh contact window of the second insulation layer.

在本發明的一實施例中,上述的第一絕緣層的第四接觸窗與第二絕緣層的第六接觸窗實質上切齊。In an embodiment of the present invention, the fourth contact window of the first insulating layer and the sixth contact window of the second insulating layer are substantially aligned.

在本發明的一實施例中,上述的第一絕緣層的第五接觸窗及第二絕緣層的第七接觸窗實質上切齊。In an embodiment of the present invention, the fifth contact window of the first insulating layer and the seventh contact window of the second insulating layer are substantially aligned.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

圖1為本發明一實施例之主動元件基板的上視示意圖。圖2A至圖2I為本發明一實施例之主動元件基板的製造流程的上視示意圖,其中圖2A至圖2I對應圖1之區域R1。圖3A至圖3I為本發明一實施例之主動元件基板的製造流程的剖面示意圖,其中圖3A至圖3I對應圖2A至圖2I的剖線A-A’及B-B’。FIG. 1 is a schematic top view of an active device substrate according to an embodiment of the present invention. FIGS. 2A to 2I are schematic top views of a manufacturing process of an active device substrate according to an embodiment of the present invention, wherein FIGS. 2A to 2I correspond to the region R1 of FIG. 1. 3A to 3I are schematic cross-sectional views illustrating a manufacturing process of an active device substrate according to an embodiment of the present invention, wherein FIGS. 3A to 3I correspond to the section lines A-A 'and B-B' of FIGS. 2A to 2I.

請先參照圖1、圖2I以及圖3I,主動元件基板100包括基底110,具有主動區100a以及主動區100a外的周邊區100b。基底110是用以承載主動元件基板100的其它構件之用。舉例而言,在本實施例中,基底110的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如:晶圓、陶瓷、或其他可適用的材料)、或是其他可適用的材料。Please refer to FIG. 1, FIG. 2I and FIG. 3I first. The active device substrate 100 includes a substrate 110 having an active area 100 a and a peripheral area 100 b outside the active area 100 a. The substrate 110 is used to carry other components of the active device substrate 100. For example, in this embodiment, the material of the substrate 110 may be glass, quartz, organic polymer, or an opaque / reflective material (such as wafer, ceramic, or other applicable materials), or Other applicable materials.

以下配合圖2A至圖2I及圖3A至圖3I舉例說明主動區100a中的各構件的製作流程。The following describes the manufacturing process of each component in the active area 100a with reference to FIGS. 2A to 2I and FIGS. 3A to 3I.

請參照圖2A及圖3A,首先,提供基底110,並在基底110上形成半導體層,所述半導體層具有多個半導體圖案111。在本實施例中,半導體圖案111的材料例如是多晶矽(poly-silicon),但本發明不以此為限。2A and 3A, first, a substrate 110 is provided, and a semiconductor layer is formed on the substrate 110. The semiconductor layer has a plurality of semiconductor patterns 111. In this embodiment, the material of the semiconductor pattern 111 is, for example, poly-silicon, but the invention is not limited thereto.

請參照圖2B及圖3B,接著,形成閘絕緣層112,以覆蓋半導體圖案111及基底110。然後,在閘絕緣層112上形成第一訊號線113(繪示於圖2B)與閘極113a(繪示於圖2B)。第一訊號線113沿著第二方向D2延伸。第一訊號線113與閘極113a電性連接。也就是說,第一訊號線113可以是掃描線。在本實施例中,閘極113a例如是第一訊號線113的一部分,但本發明不以此為限。Referring to FIG. 2B and FIG. 3B, a gate insulating layer 112 is formed to cover the semiconductor pattern 111 and the substrate 110. Then, a first signal line 113 (shown in FIG. 2B) and a gate electrode 113a (shown in FIG. 2B) are formed on the gate insulating layer 112. The first signal line 113 extends along the second direction D2. The first signal line 113 is electrically connected to the gate electrode 113a. That is, the first signal line 113 may be a scanning line. In this embodiment, the gate electrode 113a is, for example, a part of the first signal line 113, but the present invention is not limited thereto.

請參照圖2C及圖3C,接著,形成阻絕層114,阻絕層114覆蓋第一訊號線113及閘絕緣層112。阻絕層114具有接觸窗114a、114b,分別暴露出半導體圖案111的兩端。Referring to FIG. 2C and FIG. 3C, a barrier layer 114 is formed, and the barrier layer 114 covers the first signal line 113 and the gate insulating layer 112. The blocking layer 114 has contact windows 114a and 114b, and both ends of the semiconductor pattern 111 are exposed.

請參照圖2D及圖3D,接著,在阻絕層114上形成第二訊號線115、源極115b與汲極115a。請參照圖2C、圖2D、圖3C及圖3D,源極115b填入接觸窗114b,以和半導體圖案111的一端電性連接。汲極115a與源極115b分離,且填入接觸窗114a,以和半導體圖案111的另一端電性連接。半導體圖案111、閘極113a、源極115b與汲極115a可形成主動元件120。第二訊號線115與源極115b電性連接。也就是說,第二訊號線115可以是資料線。第一訊號線113大致上沿著第二方向D2延伸,第二訊號線115大致上沿著第一方向D1延伸,而第一方向D1與第二方向D2交錯。舉例而言,在本實施例中,第一方向D1與第二方向D2大致上可以垂直,但本發明不以此為限。Referring to FIG. 2D and FIG. 3D, a second signal line 115, a source 115 b and a drain 115 a are formed on the blocking layer 114. Referring to FIG. 2C, FIG. 2D, FIG. 3C and FIG. 3D, the source 115b is filled in the contact window 114b to be electrically connected to one end of the semiconductor pattern 111. The drain electrode 115a is separated from the source electrode 115b, and is filled in the contact window 114a to be electrically connected to the other end of the semiconductor pattern 111. The semiconductor pattern 111, the gate 113a, the source 115b, and the drain 115a may form an active device 120. The second signal line 115 is electrically connected to the source 115b. That is, the second signal line 115 may be a data line. The first signal line 113 extends substantially along the second direction D2, the second signal line 115 extends substantially along the first direction D1, and the first direction D1 and the second direction D2 are staggered. For example, in this embodiment, the first direction D1 and the second direction D2 may be substantially perpendicular, but the present invention is not limited thereto.

請參照圖2E及圖3E,接著,形成介電層(或稱,平坦層)116,以覆蓋第二訊號線115、汲極115a、源極115b以及阻絕層114。其中,介電層116具有接觸窗116a(繪示於圖2E),且接觸窗116a暴露出部分的汲極115a。Referring to FIG. 2E and FIG. 3E, a dielectric layer (or flat layer) 116 is formed to cover the second signal line 115, the drain 115a, the source 115b, and the blocking layer 114. The dielectric layer 116 has a contact window 116a (shown in FIG. 2E), and the contact window 116a exposes a part of the drain electrode 115a.

請參照圖2F及圖3F,然後,於介電層116上形成觸控訊號線130。在本實施例中,觸控訊號線130可選擇性地在第一方向D1上延伸,並重疊於第二訊號線115。Please refer to FIG. 2F and FIG. 3F. Then, a touch signal line 130 is formed on the dielectric layer 116. In this embodiment, the touch signal line 130 may selectively extend in the first direction D1 and overlap the second signal line 115.

請參照圖2G及圖3G,接著,形成第一絕緣材料層140a,以覆蓋觸控訊號線130及介電層116。然後,在第一絕緣材料層140a上形成觸控電極150。觸控電極150暴露出部分的第一絕緣材料層140a。Referring to FIG. 2G and FIG. 3G, a first insulating material layer 140 a is formed to cover the touch signal line 130 and the dielectric layer 116. Then, a touch electrode 150 is formed on the first insulating material layer 140a. The touch electrode 150 exposes a part of the first insulating material layer 140a.

請參照圖2H及圖3H,接著,形成第二絕緣材料層160a,以覆蓋觸控電極150及第一絕緣材料層140a。Referring to FIG. 2H and FIG. 3H, a second insulating material layer 160a is formed to cover the touch electrodes 150 and the first insulating material layer 140a.

請參照圖2I及圖3I,然後,利用同一遮罩同時圖案化第一絕緣材料層140a以及第二絕緣材料層160a,以形成第一絕緣層140及第二絕緣層160。第一絕緣層140具有第一接觸窗141,與觸控訊號線130的接觸部131重疊。第二絕緣層160具有第二接觸窗161,與觸控電極150的接觸部151及第一絕緣層140的第一接觸窗141重疊。Please refer to FIG. 2I and FIG. 3I, and then use the same mask to pattern the first insulating material layer 140a and the second insulating material layer 160a simultaneously to form the first insulating layer 140 and the second insulating layer 160. The first insulating layer 140 has a first contact window 141 and overlaps the contact portion 131 of the touch signal line 130. The second insulating layer 160 has a second contact window 161 that overlaps the contact portion 151 of the touch electrode 150 and the first contact window 141 of the first insulating layer 140.

在本實施例中,由第一絕緣層140及第二絕緣層160是利用同一遮罩同時被圖案化而成的,且第二絕緣層160之第二接觸窗161的第一部分161a在觸控電極150上,而第二絕緣層160之第二接觸窗161的第二部分161b不在觸控電極150上,因此,第一絕緣層140之定義第一接觸窗141的側壁142會與觸控電極150之接觸部151的側壁152實質上切齊。也就是說,第一接觸窗141於基底110上之垂直投影的邊緣的一部分與觸控電極150之接觸部151於基底110上之垂直投影的邊緣的一部分實質上重合。In this embodiment, the first insulating layer 140 and the second insulating layer 160 are simultaneously patterned by using the same mask, and the first portion 161a of the second contact window 161 of the second insulating layer 160 is touched. On the electrode 150, and the second portion 161b of the second contact window 161 of the second insulating layer 160 is not on the touch electrode 150, therefore, the sidewall 142 of the first insulating layer 140 defining the first contact window 141 and the touch electrode The side walls 152 of the contact portion 151 of 150 are substantially aligned. That is, a part of the edge of the vertical projection of the first contact window 141 on the substrate 110 and a part of the edge of the vertical projection of the contact portion 151 of the touch electrode 150 on the substrate 110 substantially coincide.

請參照圖2I及圖3I,接著,形成畫素電極170以及第一橋接元件180於第二絕緣層150上。畫素電極170與第一橋接元件180分離。畫素電極170與主動元件120電性連接。第一橋接元件180透過第一接觸窗141及第二接觸窗161與觸控電極150的接觸部151及觸控訊號線130的接觸部131電性連接。觸控電極150與觸控訊號線130電性連接,以在觸控時段用以感測觸控動作。此外,觸控電極150與畫素電極170重疊,而觸控電極150與畫素電極170在顯示時段用以驅動顯示介質(例如但不限於:液晶)。也就是說,觸控電極150在顯示時段可視為共用電極。此時,便完成主動元件基板100(標示於圖1)的製作。舉例而言,在本實施例中,畫素電極170可以是透明導電層,其包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊層,但本發明不以此為限。Referring to FIG. 2I and FIG. 3I, a pixel electrode 170 and a first bridge element 180 are formed on the second insulating layer 150. The pixel electrode 170 is separated from the first bridge element 180. The pixel electrode 170 is electrically connected to the active device 120. The first bridge element 180 is electrically connected to the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130 through the first contact window 141 and the second contact window 161. The touch electrode 150 is electrically connected to the touch signal line 130 to sense a touch action during a touch period. In addition, the touch electrodes 150 and the pixel electrodes 170 overlap, and the touch electrodes 150 and the pixel electrodes 170 are used to drive a display medium (such as, but not limited to, a liquid crystal) during a display period. That is, the touch electrode 150 can be regarded as a common electrode during a display period. At this point, the fabrication of the active device substrate 100 (labeled in FIG. 1) is completed. For example, in this embodiment, the pixel electrode 170 may be a transparent conductive layer including a metal oxide, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium Zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above, but the invention is not limited thereto.

值得一提的是,在本實施例中,利用同一遮罩形成與觸控電極150之接觸部151及觸控訊號線130之接觸部131重疊的第一接觸窗141及第二接觸窗161,利用填入第一接觸窗141及第二接觸窗161的第一橋接元件180電性連接觸控電極150的接觸部151與觸控訊號線130的接觸部131,且第一橋接元件180可利用既有之膜層(例如但不限於:畫素電極170所屬之膜層)製作,因此,能減少製作主動元件陣列基板100所需的遮罩數量,有助於製造成本降低。It is worth mentioning that in this embodiment, the same contact mask is used to form the first contact window 141 and the second contact window 161 that overlap the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130. The first bridge element 180 filled in the first contact window 141 and the second contact window 161 is used to electrically connect the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130, and the first bridge element 180 can be used. Existing film layers (such as, but not limited to, the film layer to which the pixel electrode 170 belongs) are manufactured. Therefore, the number of masks required to manufacture the active device array substrate 100 can be reduced, which helps reduce manufacturing costs.

圖4為對應圖2I之區域R4的放大示意圖。請參照圖2I及圖4,在本實施例中,觸控訊號線130在第一方向D1上延伸。觸控電極150之接觸部151於基底110上之垂直投影的邊緣151a的部分與第一方向D1夾有一角度α,而0 o≦α≦90 o,較佳30 o≦α≦60 o。此外,在本實施例中,第一訊號線113與主動元件120電性連接,且與觸控訊號線130交錯。其中,第一訊號線113在第二方向D2上延伸,而觸控電極150之接觸部151於基底110上之垂直投影的邊緣的一部分與第二方向D2夾有角度β,而0 o≦β≦90 o,較佳30 o≦α≦60 oFIG. 4 is an enlarged schematic diagram of a region R4 corresponding to FIG. 2I. Please refer to FIGS. 2I and 4. In this embodiment, the touch signal line 130 extends in the first direction D1. The touch electrode contact portions 151,150 of the first portion in a direction perpendicular to the edge of the projection 151a on the substrate 110 D1 sandwiched at an angle α, and 0 o ≦ α ≦ 90 o, preferably 30 o ≦ α ≦ 60 o. In addition, in this embodiment, the first signal line 113 is electrically connected to the active device 120 and is interleaved with the touch signal line 130. Wherein, the first signal line 113 extends in the second direction D2, and a part of the edge of the vertical projection of the contact portion 151 of the touch electrode 150 on the substrate 110 is at an angle β with the second direction D2, and 0 o ≦ β ≦ 90 o , preferably 30 o ≦ α ≦ 60 o .

請參照圖3I及圖4,在本實施例中,第二接觸窗161具有第一部分161a及第二部分161b,分別與觸控電極150的接觸部151及第一絕緣層140的第一接觸窗141重疊。第二接觸窗160的第一部分161a及第二接觸窗160的第二部分161b在第三方向D3上排列,而第一方向D1與第三方向D3交錯。也就是說,在本實施例中,第二接觸窗161、觸控電極150的接觸部151以及觸控訊號線130的接觸部131大致上可呈菱形,且所述菱形的邊相對於第一訊號線113及第二訊號線115傾斜。藉此,第二接觸窗161、觸控電極150的接觸部151以及觸控訊號線130的接觸部131能以較少的面積設置於相鄰的多個畫素電極170之間,進而提升主動元件基板100的開口率。Please refer to FIGS. 3I and 4. In this embodiment, the second contact window 161 has a first portion 161 a and a second portion 161 b, which are respectively in contact with the contact portion 151 of the touch electrode 150 and the first contact window of the first insulating layer 140. 141 overlap. The first portion 161a of the second contact window 160 and the second portion 161b of the second contact window 160 are aligned in the third direction D3, and the first direction D1 and the third direction D3 are staggered. That is, in this embodiment, the second contact window 161, the contact portion 151 of the touch electrode 150, and the contact portion 131 of the touch signal line 130 may be substantially rhombic, and the sides of the rhombus are opposite to the first The signal line 113 and the second signal line 115 are inclined. Thereby, the second contact window 161, the contact portion 151 of the touch electrode 150, and the contact portion 131 of the touch signal line 130 can be disposed between adjacent pixel electrodes 170 with a smaller area, thereby improving the The aperture ratio of the element substrate 100.

圖5A為對應圖1之區域R2的放大示意圖。圖5B為對應圖5A之剖線C-C’的剖面示意圖。周邊區100b中區域R2的各個疊層及製作方法大致與主動區100a中區域R1的各個疊層及製作方法相似,於此不再贅述。FIG. 5A is an enlarged schematic diagram of a region R2 corresponding to FIG. 1. Fig. 5B is a schematic cross-sectional view corresponding to the section line C-C 'of Fig. 5A. The respective stacking and manufacturing methods of the region R2 in the peripheral region 100b are substantially similar to the respective stacking and manufacturing methods of the region R1 in the active region 100a, and are not repeated here.

請參照圖5A及圖5B,在本實施例中,主動元件基板100更包括接墊115c,與驅動晶片(未繪示)電性連接,且設置於周邊區100b。介電層116設置於接墊115c上,且具有與接墊115c重疊的至少一第三接觸窗116b。其中,觸控訊號線130設置於介電層116b上且具有設置於周邊區100b的第一端部132。觸控訊號線130的第一端部132透過介電層116b的第三接觸窗116b與接墊115c電性連接。具體而言,在本實施例中,觸控訊號線130的第一端部132設置於介電層116的至少一第三接觸窗116b中且直接地與接墊115c電性接觸。Please refer to FIG. 5A and FIG. 5B. In this embodiment, the active device substrate 100 further includes a pad 115c, which is electrically connected to a driving chip (not shown) and is disposed in the peripheral region 100b. The dielectric layer 116 is disposed on the contact pad 115c and has at least one third contact window 116b overlapping the contact pad 115c. The touch signal line 130 is disposed on the dielectric layer 116b and has a first end portion 132 disposed on the peripheral region 100b. The first end portion 132 of the touch signal line 130 is electrically connected to the pad 115c through the third contact window 116b of the dielectric layer 116b. Specifically, in this embodiment, the first end portion 132 of the touch signal line 130 is disposed in the at least one third contact window 116b of the dielectric layer 116 and is in direct electrical contact with the pad 115c.

圖6A為對應圖1之區域R3的放大示意圖。圖6B為對應圖6A之剖線D-D’的剖面示意圖。周邊區100b中區域R3的各個疊層及製作方法大致與主動區100a中區域R1的各個疊層及製作方法相似,於此不再贅述。FIG. 6A is an enlarged schematic diagram of a region R3 corresponding to FIG. 1. Fig. 6B is a schematic sectional view corresponding to the section line D-D 'of Fig. 6A. The respective stacking and manufacturing methods of the region R3 in the peripheral region 100b are substantially similar to the respective stacking and manufacturing methods of the region R1 in the active region 100a, and are not repeated here.

請參照圖6A及圖6B,在本實施例中,主動元件基板100更包括觸控開關121及第二橋接元件180a。觸控開關121設置於主動元件基板110的周邊區100b。介電層116設置於觸控開關121上。介電層116具有與觸控開關121之一部分121a重疊的接觸窗116d。觸控訊號線130設置於介電層116上且具有第二端部133。第一絕緣層140具有第四接觸窗144及第五接觸窗145。第四接觸窗144與觸控開關121之部分121a重疊。第五接觸窗145與觸控訊號線130之第二端部133重疊。第二絕緣層160具有第六接觸窗162及第七接觸窗163。第六接觸窗162與第四接觸窗144重疊,且第七接觸窗163與第五接觸窗145重疊。在本實施例中,第四接觸窗144於基底110上的垂直投影及第六接觸窗162於基底110上的垂直投影可選擇性地位於接觸窗116d於基底110上的垂直投影以內,但本發明不以此為限。Please refer to FIGS. 6A and 6B. In this embodiment, the active device substrate 100 further includes a touch switch 121 and a second bridge device 180a. The touch switch 121 is disposed in the peripheral region 100 b of the active device substrate 110. The dielectric layer 116 is disposed on the touch switch 121. The dielectric layer 116 has a contact window 116d that overlaps a portion 121a of the touch switch 121. The touch signal line 130 is disposed on the dielectric layer 116 and has a second end portion 133. The first insulating layer 140 includes a fourth contact window 144 and a fifth contact window 145. The fourth contact window 144 overlaps a portion 121 a of the touch switch 121. The fifth contact window 145 overlaps the second end portion 133 of the touch signal line 130. The second insulating layer 160 includes a sixth contact window 162 and a seventh contact window 163. The sixth contact window 162 overlaps the fourth contact window 144, and the seventh contact window 163 overlaps the fifth contact window 145. In this embodiment, the vertical projection of the fourth contact window 144 on the substrate 110 and the vertical projection of the sixth contact window 162 on the substrate 110 may be selectively located within the vertical projection of the contact window 116d on the substrate 110. The invention is not limited to this.

第二橋接元件180a可透過第一絕緣層140的第四接觸窗144及第二絕緣層160的第六接觸窗162與觸控開關121的部分121a電性連接。第二橋接元件180a可透過第一絕緣層140的第五接觸窗145及第二絕緣層160的第七接觸窗163與觸控訊號線130的第二端部133電性連接。The second bridge element 180 a can be electrically connected to the portion 121 a of the touch switch 121 through the fourth contact window 144 of the first insulating layer 140 and the sixth contact window 162 of the second insulating layer 160. The second bridge element 180 a can be electrically connected to the second end portion 133 of the touch signal line 130 through the fifth contact window 145 of the first insulating layer 140 and the seventh contact window 163 of the second insulating layer 160.

在本實施例中,第一絕緣層140的第四接觸窗144與第二絕緣層160的第六接觸窗162實質上切齊。在本實施例中,第一絕緣層140的第五接觸窗145及第二絕緣層160的第七接觸窗163實質上切齊。In this embodiment, the fourth contact window 144 of the first insulating layer 140 and the sixth contact window 162 of the second insulating layer 160 are substantially aligned. In this embodiment, the fifth contact window 145 of the first insulating layer 140 and the seventh contact window 163 of the second insulating layer 160 are substantially aligned.

綜上所述,在本發明一實施例的主動元件基板的製程中,利用同一遮罩形成與觸控電極之接觸部及觸控訊號線之接觸部重疊之第一絕緣層的第一接觸窗及第二絕緣層的第二接觸窗,利用填入所述第一接觸窗及所述第二接觸窗的第一橋接元件電性連接觸控電極的接觸部與觸控訊號線的接觸部,且第一橋接元件可利用既有之膜層(例如但不限於:畫素電極所屬之膜層)製作,因此,能減少製作主動元件陣列基板所需的遮罩數量,有助於製造成本降低。In summary, in the manufacturing process of the active device substrate according to an embodiment of the present invention, the first contact window of the first insulating layer overlapping the contact portion of the touch electrode and the contact portion of the touch signal line is formed by using the same mask. And the second contact window of the second insulation layer, the first bridge element filled in the first contact window and the second contact window is used to electrically connect the contact portion of the touch electrode and the contact portion of the touch signal line, In addition, the first bridge element can be manufactured by using an existing film layer (such as, but not limited to, a film layer to which a pixel electrode belongs). Therefore, the number of masks required to fabricate an active element array substrate can be reduced, which can help reduce manufacturing costs. .

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧主動元件基板100‧‧‧Active component substrate

100a‧‧‧主動區 100a‧‧‧active zone

100b‧‧‧周邊區 100b‧‧‧Peripheral area

110‧‧‧基底 110‧‧‧ substrate

111‧‧‧半導體圖案 111‧‧‧Semiconductor pattern

112‧‧‧閘絕緣層 112‧‧‧Gate insulation

113‧‧‧第一訊號線 113‧‧‧The first signal line

113a‧‧‧閘極 113a‧‧‧Gate

114‧‧‧阻絕層 114‧‧‧ Barrier

114a、114b‧‧‧接觸窗 114a, 114b‧‧‧ contact window

115‧‧‧第二訊號線 115‧‧‧The second signal line

115a‧‧‧汲極 115a‧‧‧Drain

115b‧‧‧源極 115b‧‧‧Source

115c‧‧‧接墊 115c‧‧‧pad

116‧‧‧介電層 116‧‧‧ Dielectric layer

116a、116d‧‧‧接觸窗 116a, 116d‧‧‧touch window

116b‧‧‧第三接觸窗 116b‧‧‧Third contact window

120‧‧‧主動元件 120‧‧‧active element

121‧‧‧觸控開關 121‧‧‧touch switch

121a‧‧‧部分 121a‧‧‧part

130‧‧‧觸控訊號線 130‧‧‧touch signal line

131‧‧‧接觸部 131‧‧‧Contact

132‧‧‧第一端部 132‧‧‧first end

133‧‧‧第二端部 133‧‧‧ second end

140‧‧‧第一絕緣層 140‧‧‧first insulating layer

140a‧‧‧第一絕緣材料層 140a‧‧‧first insulating material layer

141‧‧‧第一接觸窗 141‧‧‧The first contact window

142‧‧‧側壁 142‧‧‧ sidewall

144‧‧‧第四接觸窗 144‧‧‧Fourth contact window

145‧‧‧第五接觸窗 145‧‧‧Fifth contact window

150‧‧‧觸控電極 150‧‧‧touch electrode

151‧‧‧接觸部 151‧‧‧Contact

151a‧‧‧邊緣 151a‧‧‧Edge

152‧‧‧側壁 152‧‧‧ sidewall

160‧‧‧第二絕緣層 160‧‧‧Second insulation layer

160a‧‧‧第二絕緣材料層 160a‧‧‧second insulating material layer

161‧‧‧第二接觸窗 161‧‧‧Second contact window

161a‧‧‧第一部分 161a‧‧‧Part I

161b‧‧‧第二部分 161b‧‧‧Part II

162‧‧‧第六接觸窗 162‧‧‧The sixth contact window

163‧‧‧第七接觸窗 163‧‧‧The seventh contact window

170‧‧‧畫素電極 170‧‧‧pixel electrode

180‧‧‧第一橋接元件 180‧‧‧first bridge element

180a‧‧‧第二橋接元件 180a‧‧‧Second bridge element

D1‧‧‧第一方向 D1‧‧‧ first direction

D2‧‧‧第二方向 D2‧‧‧ Second direction

D3‧‧‧第三方向 D3‧‧‧ Third direction

G‧‧‧閘極 G‧‧‧Gate

R1、R2、R3、R4‧‧‧區域 R1, R2, R3, R4‧‧‧ area

α、β‧‧‧角度 α, β‧‧‧ angle

圖1為本發明一實施例之主動元件基板的上視示意圖。 圖2A至圖2I為本發明一實施例之主動元件基板的製造流程的上視示意圖。 圖3A至圖3I為本發明一實施例之主動元件基板的製造流程的剖面示意圖。 圖4為對應圖2I之區域R4的放大示意圖。 圖5A為對應圖1之區域R2的放大示意圖。 圖5B為對應圖5A之剖線C-C’的剖面示意圖。 圖6A為對應圖1之區域R3的放大示意圖。 圖6B為對應圖6A之剖線D-D’的剖面示意圖。FIG. 1 is a schematic top view of an active device substrate according to an embodiment of the present invention. 2A to 2I are schematic top views of a manufacturing process of an active device substrate according to an embodiment of the present invention. 3A to 3I are schematic cross-sectional views illustrating a manufacturing process of an active device substrate according to an embodiment of the present invention. FIG. 4 is an enlarged schematic diagram of a region R4 corresponding to FIG. 2I. FIG. 5A is an enlarged schematic diagram of a region R2 corresponding to FIG. 1. Fig. 5B is a schematic cross-sectional view corresponding to the section line C-C 'of Fig. 5A. FIG. 6A is an enlarged schematic diagram of a region R3 corresponding to FIG. 1. Fig. 6B is a schematic sectional view corresponding to the section line D-D 'of Fig. 6A.

Claims (10)

一種主動元件基板,包括: 一基底,具有一主動區以及該主動區外的一周邊區; 一主動元件,設置於該基底的該主動區上; 一觸控訊號線,設置於該基底上; 一第一絕緣層,設置於該觸控訊號線上,且具有與該觸控訊號線之一接觸部重疊的一第一接觸窗; 一觸控電極,設置於該第一絕緣層上,且具有一接觸部; 一第二絕緣層,設置於該觸控電極上,且具有一第二接觸窗,其中該第二接觸窗與該觸控電極的該接觸部及該第一絕緣層的該第一接觸窗重疊; 一畫素電極,設置於該第二絕緣層上,且與該主動元件電性連接;以及 一第一橋接元件,設置於該第二絕緣層上,且與該畫素電極分離,其中該第一橋接元件透過該第一接觸窗及該第二接觸窗與該觸控電極的該接觸部及該觸控訊號線的該接觸部電性連接。An active element substrate includes: a substrate having an active region and a peripheral region outside the active region; an active element disposed on the active region of the substrate; a touch signal line disposed on the substrate; a A first insulation layer is disposed on the touch signal line and has a first contact window overlapping with a contact portion of the touch signal line; a touch electrode is disposed on the first insulation layer and has a A contact portion; a second insulating layer disposed on the touch electrode and having a second contact window, wherein the second contact window and the contact portion of the touch electrode and the first insulating layer The contact window overlaps; a pixel electrode is disposed on the second insulation layer and is electrically connected to the active element; and a first bridge element is disposed on the second insulation layer and separated from the pixel electrode The first bridge element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window. 如申請專利範圍第1項所述的主動元件基板,其中該第一絕緣層具有定義該第一接觸窗的一側壁,該觸控電極之該接觸部的一側壁與該第一絕緣層的該側壁實質上切齊。The active device substrate according to item 1 of the patent application scope, wherein the first insulating layer has a sidewall defining the first contact window, a sidewall of the contact portion of the touch electrode and the first insulating layer The side walls are substantially aligned. 如申請專利範圍第1項所述的主動元件基板,其中該第一接觸窗於該基底上之一垂直投影的一邊緣的一部分與該觸控電極之該接觸部於該基底上之一垂直投影的一邊緣的一部分實質上重合。The active device substrate according to item 1 of the scope of patent application, wherein a part of an edge of a vertical projection of the first contact window on the substrate and a vertical projection of the contact portion of the touch electrode on the substrate A part of an edge of the substantially coincides. 如申請專利範圍第1項所述的主動元件基板,其中該觸控訊號線在一第一方向上延伸,該觸控電極之該接觸部於該基底上之一垂直投影的一邊緣的一部分與該第一方向夾有一角度α,而0 o≦α≦90 oThe active device substrate according to item 1 of the patent application scope, wherein the touch signal line extends in a first direction, and a portion of an edge of a vertical projection of the contact portion of the touch electrode on the substrate and the first direction by an angle α, and 0 o ≦ α ≦ 90 o. 如申請專利範圍第1項所述的主動元件基板,更包括: 一第一訊號線,與該主動元件電性連接,且與該觸控訊號線交錯,其中該第一訊號線在一第二方向上延伸,而該觸控電極之該接觸部於該基底上之一垂直投影的一邊緣的一部分與該第二方向夾有一角度β,而0 o≦β≦90 oThe active device substrate according to item 1 of the scope of patent application, further comprising: a first signal line electrically connected to the active device and interlaced with the touch signal line, wherein the first signal line is in a second extends in a direction, and the contact portion of the electrodes of the touch on the substrate an edge portion of one of the vertical projection of the second direction by an angle beta], and 0 o ≦ β ≦ 90 o. 如申請專利範圍第1項所述的主動元件基板,其中該觸控訊號線在一第一方向上延伸;該第二接觸窗具有一第一部分及一第二部分,分別與該觸控電極的該接觸部及該第一絕緣層的該第一接觸窗重疊,該第二接觸窗的該第一部分及該第二接觸窗的該第二部分在一第三方向上排列,而該第一方向與該第三方向交錯。The active device substrate according to item 1 of the scope of patent application, wherein the touch signal line extends in a first direction; the second contact window has a first portion and a second portion, which are respectively connected to the touch electrodes. The contact portion and the first contact window of the first insulation layer overlap, the first portion of the second contact window and the second portion of the second contact window are aligned in a third direction, and the first direction and The third direction is staggered. 如申請專利範圍第1項所述的主動元件基板,更包括: 一接墊,設置於該基底的該周邊區;以及 一介電層,設置於該接墊上,且具有與該接墊重疊的至少一第三接觸窗,其中該觸控訊號線設置於該介電層上且具有設置於該周邊區的一第一端部,而該觸控訊號線的該第一端部設置於該介電層的該至少一第三接觸窗中且直接地該接墊電性接觸。The active device substrate according to item 1 of the scope of the patent application, further comprising: a pad provided on the peripheral area of the substrate; and a dielectric layer provided on the pad and having an overlap with the pad. At least one third contact window, wherein the touch signal line is disposed on the dielectric layer and has a first end portion disposed on the peripheral area, and the first end portion of the touch signal line is disposed on the dielectric layer. The at least one third contact window of the electrical layer is directly in electrical contact with the pad. 如申請專利範圍第1項所述的主動元件基板,更包括: 一觸控開關,設置於該主動元件基板的該周邊區; 一介電層,設置於該觸控開關上,其中該觸控訊號線設置於該介電層上且具有一第二端部,該第一絕緣層具有分別與該觸控開關之一部分及該觸控訊號線之該第二端部重疊的一第四接觸窗及一第五接觸窗,該第二絕緣層具有分別與該第四接觸窗及該第五接觸窗重疊的一第六接觸窗及一第七接觸窗;以及 一第二橋接元件,設置於該第二絕緣層上,透過該第一絕緣層的該第四接觸窗及該第二絕緣層的該第六接觸窗與該觸控開關的該部分電性連接,且透過該第一絕緣層的該第五接觸窗及該第二絕緣層的該第七接觸窗與該觸控訊號線的該第二端部電性連接。The active device substrate according to item 1 of the patent application scope further includes: a touch switch provided in the peripheral region of the active device substrate; a dielectric layer provided on the touch switch, wherein the touch The signal line is disposed on the dielectric layer and has a second end portion, and the first insulating layer has a fourth contact window that overlaps a portion of the touch switch and the second end portion of the touch signal line, respectively. And a fifth contact window, the second insulating layer has a sixth contact window and a seventh contact window respectively overlapping the fourth contact window and the fifth contact window; and a second bridge element disposed on the On the second insulating layer, the fourth contact window of the first insulating layer and the sixth contact window of the second insulating layer are electrically connected to the part of the touch switch, and pass through the first insulating layer. The fifth contact window and the seventh contact window of the second insulation layer are electrically connected to the second end portion of the touch signal line. 如申請專利範圍第8項所述的主動元件基板,其中該第一絕緣層的該第四接觸窗與該第二絕緣層的該第六接觸窗實質上切齊。The active device substrate according to item 8 of the scope of patent application, wherein the fourth contact window of the first insulation layer and the sixth contact window of the second insulation layer are substantially aligned. 如申請專利範圍第8項所述的主動元件基板,其中該第一絕緣層的該第五接觸窗及該第二絕緣層的該第七接觸窗實質上切齊。According to the active device substrate according to item 8 of the scope of patent application, the fifth contact window of the first insulating layer and the seventh contact window of the second insulating layer are substantially aligned.
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