TWI595393B - In-cell touch device - Google Patents

Description

In-line touch device

The present invention relates to a touch device, and more particularly to an in-cell touch device.

In the panel design, the gate driving circuit is directly fabricated on the active device array substrate instead of the external driving chip technology, which is called Gate Drive on Array (GOA). In a display device of an In-Plane Switching (IPS) type or a Fringe Field Switching (FFS) type, the gate driving circuit is usually disposed in a peripheral region of the active device array substrate. There is no shielding element above it, so the gate driving circuit is easily damaged by Electrostatic Discharge (ESD).

In order to solve the above problems, it is known to form a transparent conductive layer on the outer surface of the color filter substrate relatively far from the active device array substrate to comprehensively cover the display region and the peripheral region where the gate driving circuit is located. The above method can indeed prevent the gate driving circuit from being damaged by electrostatic discharge. however. In the current multi-functional appeal of electronic products, touch functions such as an in-cell touch display device are usually attached to the display device. Since the in-cell touch display device has an embedded touch electrode, it is impossible to provide a comprehensive transparent conductive layer for shielding static electricity on the outer surface of the color filter substrate, because this affects the electrical properties of the device and the touch. The touch function of the electrode. In this way, how to effectively prevent the damage of the electrostatic discharge from the gate driving circuit of the in-cell touch display device is an important issue.

The invention provides an in-cell touch device, which can effectively prevent the gate driving circuit from being damaged by electrostatic discharge.

The in-cell touch device of the present invention comprises an active device array substrate, at least one gate driving circuit, a counter substrate and a shielding layer. The active device array substrate has a display area and a peripheral area, and the peripheral area is connected to the display area. The gate driving circuit is disposed on the active device array substrate and located in the peripheral region. The opposite substrate is disposed opposite to the active device array substrate. The shielding layer is disposed between the active device array substrate and the opposite substrate. The orthographic projection of the shielding layer on the active device array substrate at least partially overlaps the orthographic projection of the gate driving circuit on the active device array substrate.

In an embodiment of the invention, the active device array substrate includes a substrate, a plurality of active elements, a plurality of pixel electrodes, a common electrode, and a ground ring. The active device array is arranged on the substrate and located in the display area. The pixel electrodes are disposed on the substrate and located in the display area, wherein the pixel electrodes are electrically connected to the corresponding active components. The common electrode is disposed between the substrate and the pixel electrode, or between the opposite substrate and the pixel electrode and located in the display area. The grounding ring is disposed on the substrate and located in the peripheral area, wherein the gate driving circuit is located between the grounding ring and the display area.

In an embodiment of the invention, the shielding layer is structurally and electrically connected to the common electrode, and the shielding layer belongs to the same film layer as the common electrode or the pixel electrode.

In an embodiment of the invention, the shielding layer is electrically connected to the grounding ring, and the shielding layer and the pixel electrode or the common electrode belong to the same film layer.

In an embodiment of the invention, the shielding layer and the pixel electrode or the common electrode belong to the same film layer, and the shielding layer is electrically floating.

In an embodiment of the invention, the shielding layer is disposed on the opposite substrate and electrically connected to the ground ring through the conductive structure.

In an embodiment of the invention, the orthographic projection of the shielding layer on the active device array substrate completely covers the orthographic projection of the gate driving circuit on the active device array substrate.

In an embodiment of the invention, the shielding layer is disposed on the opposite substrate, and the shielding layer is electrically floating.

In an embodiment of the invention, the in-cell touch device further includes a plurality of touch driving units and a plurality of touch sensing units. One of the touch driving unit and the touch sensing unit is located on the opposite substrate, and the other of the touch driving unit and the touch sensing unit is located on the active device array substrate.

In an embodiment of the invention, the in-cell touch device is a self-capacitive touch device.

Based on the above, the in-cell touch device of the present invention has a shielding layer, wherein the shielding layer is disposed between the active device array substrate and the opposite substrate, and the orthographic projection of the shielding layer on the active device array substrate at least partially overlaps An orthographic projection of the gate drive circuit on the active device array substrate. In this way, the gate driving circuit can be protected by the shielding layer to prevent the gate driving circuit from being damaged by the electrostatic discharge phenomenon.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1A is a schematic top view of an in-cell touch device according to an embodiment of the invention. FIG. 1B is a partial cross-sectional view of the in-cell touch device of FIG. 1A. For convenience of explanation, some of the elements are omitted in FIGS. 1A and 1B. Referring to FIG. 1A and FIG. 1B simultaneously, in the embodiment, the in-cell touch device 100a includes an active device array substrate 110, at least one gate driving circuit 120 (two are schematically shown in FIG. 1A), and opposite directions. The substrate 130 and the shielding layer 140a. The active device array substrate 110 has a display area AA and a peripheral area BB connected to the display area AA. In another embodiment, the peripheral area BB may be a surrounding display area AA. The gate driving circuit 120 is disposed on the active device array substrate 110 and located in the peripheral region BB. The counter substrate 130 is disposed opposite to the active device array substrate 110. The shielding layer 140a is disposed between the active device array substrate 110 and the opposite substrate 130. The orthographic projection of the shielding layer 140a on the active device array substrate 110 at least partially overlaps the orthographic projection of the gate driving circuit 120 on the active device array substrate 110.

In detail, referring to FIG. 1B again, the active device array substrate 110 of the present embodiment includes a substrate 112, a plurality of active components 114 (one of which is schematically illustrated in FIG. 1B), and a plurality of pixel electrodes 116 (FIG. 1B schematically depicts One), a common electrode 118, and a grounding ring 119 are shown. The array of active elements 114 is arranged on the substrate 112, is located in the display area AA, and is connected to the gate driving circuit 120. Each active element 114 is composed of a gate G, a gate insulating layer GI, an active layer A, a source S and a drain D. In other words, the active device array substrate 110 can be regarded as a thin film transistor array substrate. The pixel electrodes 116 are disposed on the substrate 112 and located in the display area AA, wherein the pixel electrodes 116 are electrically connected to the drains D of the corresponding active elements 114, respectively. In more detail, the active device 114 is provided with an insulating layer 170. The insulating layer 170 is provided with a pixel electrode 116. The pixel electrode 116 is electrically connected to the opening 172 of the insulating layer 170 and electrically connected to the drain D. connection. The common electrode 118 is disposed between the opposite substrate 130 and the pixel electrode 116 and located in the display area AA, wherein the orthographic projection of the common electrode 118 on the substrate 112 at least partially overlaps the orthographic projection of the pixel electrode 116 on the substrate 112. In other embodiments, the common electrode 118 may also be disposed between the substrate 112 and the pixel electrode 116. The position of the common electrode 118 is not limited herein.

Specifically, referring to FIG. 1B and FIG. 1C simultaneously, the common electrode 118 of the present embodiment is disposed above the pixel electrode 116 and has a plurality of slits 118a. Of course, in other embodiments not shown, the pixel electrode 116 may be located above the common electrode 118, and at least one of the pixel electrode 116 and the common electrode 118 may have multiple slits or multiple branch patterns. . Here, an insulating layer 175 is disposed between the common electrode 118 and the pixel electrode 116 to electrically isolate the common electrode 118 from the pixel electrode 116. In addition, the grounding ring 119 is disposed on the substrate 112 and located in the peripheral region BB, wherein the gate driving circuit 120 is located between the grounding ring 119 and the display area AA.

It is to be noted that the active device array substrate 110 is not limited to the arrangement of FIG. 1B, and may be the arrangement of FIGS. 1D and 1E as follows. In detail, referring to FIG. 1D and FIG. 1E, in the in-cell touch devices 100a1 and 100a2, the active layer A' of the active device array substrate 110', 110'' uses low temperature polysilicon (LTPS), so the active device 114' is an upper gate type configuration, that is, the active layer A' is disposed on the substrate 112, the gate insulating layer GI' covers the active layer A', and the gate G' is disposed on the gate insulating layer GI'. The electrical layer DI covers the gate GI, and the source S' and the drain D' are disposed on the inner dielectric layer DI and are in contact with the active layer A' through the inner dielectric layer DI and the gate insulating layer GI'. Here, the active device 114' has a structure of a double gate G', but in other embodiments, it may be a single gate G', and is not limited thereto.

More specifically, the difference between FIG. 1D and FIG. 1E is that the common electrode 118 ′ is disposed between the pixel electrode 116 and the substrate 112 , and the shielding layer 140 a1 is structurally and electrically connected to the common electrode 118 ′, and is shielded. The layer 140a1 and the common electrode 118' belong to the same film layer. In FIG. 1E, the common electrode 118 is disposed between the pixel electrode 116 and the opposite substrate 130, and the shielding layer 140a2 is structurally and electrically connected to the common electrode 118, and the shielding layer 140a2 and the common electrode 118 belong to the same film layer. In addition, referring to FIG. 1F , the in-cell touch device 100 a further includes a plurality of touch units T , wherein the touch unit T is disposed in the display area AA of the active device array substrate 110 . The touch unit T is generally divided into a resistive touch unit, a capacitive touch unit, an optical touch unit, an acoustic wave touch unit or an electromagnetic touch unit according to different sensing methods. It should be noted that the touch unit T illustrated in FIG. 1F is a position indicating a touch sensing point, and does not represent a specific structure of the touch unit T. For example, if the touch unit T is a mutual-capacity touch unit, it is composed of a plurality of X-direction touch drive series and a plurality of Y-direction touch sensing series (interchangeable). The X-direction touch driving series and the Y-direction touch sensing series can be respectively disposed on the active device array substrate 110 and the opposite substrate 130, and the X-direction touch driving series and the Y-direction touch One of the sensing series belongs to the same film layer as the common electrode 118 or the pixel electrode 116. If the touch unit T is a self-capacitive touch unit, the driving and sensing actions are performed only by the common electrode 118. The touch unit T of the present embodiment is a self-capacitive touch device that directly drives and senses the common electrode 118, which not only reduces the manufacturing process of the integrated in-cell touch device 100a, but also effectively reduces the overall internal The manufacturing cost and thickness of the embedded touch device 100a.

In particular, referring to FIG. 1B, the shielding layer 140a of the present embodiment is structurally and electrically connected to the common electrode 118. Here, the shielding layer 140a and the common electrode 118 belong to the same film layer, so the same mask is used. Can effectively reduce production costs. In other words, the shielding layer 140 of the present embodiment and the common electrode 118 are made of the same material, such as a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum oxide. Zinc (Al doped ZnO, AZO), Indium-Gallium-Zinc Oxide (IGZO), Ga doped zinc oxide (GZO), Zinc-Tin Oxide (ZTO) Indium oxide (In ₂ O ₃ ), zinc oxide (ZnO), or tin dioxide (SnO ₂ ), but not limited thereto. In addition, the orthographic projection of the shielding layer 140a on the active device array substrate 110 is completely covered by the orthographic projection of the gate driving circuit 120 on the active device array substrate 110, that is, the gate driving circuit 120 is in the active device array. The orthographic projection on the substrate 110 is entirely within the orthographic projection of the shield layer 140a on the active device array substrate 110. Of course, in other embodiments not shown, the orthographic projection of the shielding layer 140a on the active device array substrate 110 may also be an orthographic projection partially overlapping the gate driving circuit 120 on the active device array substrate 110. No restrictions.

In addition, the opposite substrate 130 of the present embodiment is embodied as a color filter substrate. As shown in FIG. 1A , the surface area of the opposite substrate 130 is smaller than the surface area of the active device array substrate 110 . Furthermore, the in-cell touch device 100a further includes a display medium 150 disposed between the active device array substrate 110 and the opposite substrate 130. Here, the display medium 150 is, for example, a liquid crystal layer, but is not limited thereto. In addition, the in-cell touch device 100a of the present embodiment further includes a sealant layer 155 disposed between the active device array substrate 110 and the opposite substrate 130 to seal at least the display medium 150 to the active device array substrate 110 and the pair. Between the substrates 130.

The shielding layer 140a of the present embodiment is disposed between the active device array substrate 110 and the opposite substrate 130, and the orthographic projection of the shielding layer 140a on the active device array substrate 110 overlaps the gate driving circuit 120 on the active device array substrate. Orthographic projection on 110. Therefore, the shielding layer 140a of the present embodiment can not only affect the touch function of the touch unit T, but also the transparent conductive layer disposed on the outer surface of the color filter substrate. The gate driving circuit 120 is protected by the shielding layer 140a, and can be effectively prevented from being damaged by the electrostatic discharge phenomenon. In addition, since the shielding layer 140a of the present embodiment and the common electrode 118 belong to the same film layer, the number of use of the photomask can be reduced, and the manufacturing cost can be effectively reduced.

It is worth mentioning that, in another embodiment not shown, the shielding layer 140a and the pixel electrode 116 belong to the same film layer, but the shielding layer 140a is structurally and electrically connected to the pixel electrode 116. The shielding layer 140 is electrically connected to the common electrode 118 by the perforation of the insulating layer between the pixel electrode 116 and the common electrode 118. In this embodiment, since the shielding layer 140a and the pixel electrode 116 belong to the same film layer, the number of the photomasks can be reduced, and the manufacturing cost can be effectively reduced.

It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

2 is a partial cross-sectional view of an in-cell touch device according to an embodiment of the invention. Referring to FIG. 2, the in-cell touch device 100b of the present embodiment is similar to the in-cell touch device 100a of FIG. 1B, but the main difference is that the shielding layer 140b of the embodiment is electrically connected to the grounding ring. 119, and the shielding layer 140b and the pixel electrode 116 belong to the same film layer. In other embodiments not shown, the shielding layer 140b may also be the same film layer of the common electrode 118, which is not limited herein. In other embodiments not shown, the pixel electrode 116 may also be located above the common electrode 118. As shown in FIG. 2, although the shielding layer 140b of the present embodiment and the pixel electrode 116 belong to the same film layer, the shielding layer 140b is not structurally and electrically connected to the pixel electrode 116. In addition, the orthographic projection of the shielding layer 140b on the active device array substrate 110 is to completely cover the orthographic projection of the gate driving circuit 120 on the active device array substrate 110. Of course, in other embodiments not shown, the orthographic projection of the shielding layer 140b on the active device array substrate 110 may also be an orthographic projection partially overlapping the gate driving circuit 120 on the active device array substrate 110. No restrictions.

3 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the present invention. Referring to FIG. 3, the in-cell touch device 100c of the present embodiment is similar to the in-cell touch device 100a of FIG. 1B, but the main difference is that the shielding layer 140c and the common electrode 118 of the embodiment belong to The same film layer, and the shielding layer 140c is electrically floating. That is to say, the shielding layer 140c of the present embodiment is not electrically connected to the common electrode 118, the pixel electrode 116 or the grounding ring 119. In other embodiments not shown, the shielding layer 140c may also belong to the same film layer as the pixel electrode 116, which is not limited herein. In addition, the orthographic projection of the shielding layer 140c on the active device array substrate 110 is an orthographic projection that partially overlaps the gate driving circuit 120 on the active device array substrate 110. Of course, in other embodiments not shown, the orthographic projection of the shielding layer 140c on the active device array substrate 110 may also be an orthographic projection completely covering the gate driving circuit 120 on the active device array substrate 110. Limit it.

4 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the present invention. Referring to FIG. 4, the in-cell touch device 100d of the present embodiment is similar to the in-cell touch device 100a of FIG. 1B, but the main difference is that the shielding layer 140d of the embodiment is disposed in the opposite direction. The shielding layer 140d is electrically connected to the grounding ring 119 through the conductive structure 160. In detail, the conductive structure 160 includes a sealant layer 162 having conductive properties, a conductive layer 164, and conductive vias 166. The sealant layer 162 having conductive properties is disposed between the shield layer 140d and the conductive layer 164, and the conductive via 166 is disposed between the conductive layer 164 and the ground ring 119. The shielding layer 140d is electrically connected to the grounding ring through the sealing layer 162 having the conductive property, the conductive layer 164 and the conductive via 166. Here, the material of the sealing layer 162 having the conductive property is, for example, containing gold particles. Or the adhesion material of other metal particles, and the conductive layer 164 belongs to the same film layer as the pixel electrode 116 or the common electrode 118, and is not limited thereto.

FIG. 5 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the invention. Referring to FIG. 5, the in-cell touch device 100e of the present embodiment is similar to the in-cell touch device 100a of FIG. 1B, but the main difference is that the shielding layer 140e of the embodiment is disposed in the opposite direction. On the substrate 130, the shielding layer 140e is electrically floating. That is to say, the shielding layer 140e of the present embodiment is not electrically connected to the common electrode 118, the pixel electrode 116 or the grounding ring 119. Since the material of the sealant layer 155a is an insulating material, the shield layer 140e cannot be electrically connected to the components on the active device array substrate 110 through the sealant layer 155a, so the shield layer 140e is electrically floating.

In summary, the in-cell touch device of the present invention has a shielding layer, wherein the shielding layer is disposed between the active device array substrate and the opposite substrate, and the orthographic projection of the shielding layer on the active device array substrate at least partially overlaps An orthographic projection of the gate drive circuit on the active device array substrate. Therefore, the shielding layer of the present invention can also make the gate not only affect the touch function of the touch unit but also the transparent conductive layer disposed on the outer surface of the color filter substrate. The driving circuit is protected by the shielding layer, which can effectively avoid being destroyed by the electrostatic discharge phenomenon. Furthermore, since the shielding layer of the present invention can also belong to the same film layer as the pixel electrode and/or the common electrode on the active device array substrate, the number of use of the photomask can be reduced, and the manufacturing cost can be effectively reduced. In addition, the shielding layer of the present invention may also be disposed on the opposite substrate, as long as the shielding layer is disposed between the active device array substrate and the opposite substrate, and the orthographic projection of the shielding layer on the active device array substrate overlaps with the gate driving. The orthographic projection of the circuit on the active device array substrate is within the scope of the present invention. The shielding layer is disposed between the active device array substrate and the opposite substrate, and the shielding layer can be protected, and the function of the shielding gate driving circuit is not affected by external scratches, thereby providing reliability of the device.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a, 100a1, 100a2, 100b, 100c, 100d, 100e: in-cell touch device 110, 110', 110": active device array substrate 112: substrate 114, 114': active device 116: pixel electrode 118, 118': common electrode 118a: slit 119: grounding ring 120: gate driving circuit 130: opposite substrate 140a, 140a1, 140a2, 140b, 140c, 140d, 140e: shielding layer 150: display medium 155, 155a: sealant Layer 160: conductive structure 162: sealant layer 164 having conductive properties: conductive layer 166: conductive vias 170, 175: insulating layer 172: open hole AA: display area BB: peripheral area A, A': active layer D, D': bungee DI: inner dielectric layer G, G': gate GI, GI': gate insulating layer S, S': source T: touch unit

FIG. 1A is a schematic top view of an in-cell touch device according to an embodiment of the invention. FIG. 1B is a partial cross-sectional view of the in-cell touch device of FIG. 1A. FIG. 1C is a schematic top view of the pixel electrode and the common electrode of FIG. 1B. FIG. 1D is a partial cross-sectional view of an in-cell touch device according to another embodiment of the invention. FIG. 1E is a partial cross-sectional view of an in-cell touch device according to still another embodiment of the present invention. FIG. 1F is a top plan view of the active device array substrate of FIG. 1A. 2 is a partial cross-sectional view of an in-cell touch device according to an embodiment of the invention. 3 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the present invention. 4 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the present invention. FIG. 5 is a partial cross-sectional view showing an in-cell touch device according to another embodiment of the invention.

100a: In-cell touch device 110: active device array substrate 112: substrate 114: active device 116: pixel electrode 118: common electrode 119: ground ring 120: gate driving circuit 130: opposite substrate 140a: shielding layer 150 Display medium 155: sealant layer 170, 175: insulating layer 172: opening AA: display area BB: peripheral area A: active layer D: drain G: gate GI: gate insulating layer S: source

Claims (8)

An in-cell touch device includes: an active device array substrate having a display area and a peripheral area, the peripheral area being connected to the display area, wherein the active device array substrate comprises: a substrate; a plurality of active components, an array Arranging on the substrate, in the display area; a plurality of pixel electrodes disposed on the substrate and located in the display area, wherein the pixel electrodes are electrically connected to the corresponding active elements respectively; a common electrode The grounding ring is disposed on the substrate and located in the peripheral region; at least one gate driving circuit is disposed on the active device array substrate and located in the peripheral region, wherein the at least one gate a pole driving circuit is disposed between the grounding ring and the display area; a pair of the opposite substrate disposed opposite to the active device array substrate, wherein the common electrode is disposed between the substrate and the pixel electrodes, or Between the opposite substrate and the pixel electrodes; and a shielding layer disposed between the active device array substrate and the opposite substrate, wherein the shielding layer is on the active device An orthographic projection on the column substrate at least partially overlaps an orthographic projection of the gate driving circuit on the active device array substrate, the shielding layer is electrically connected to the ground ring, and the shielding layer and the pixel electrodes or the common electrode Belong to the same film layer. The in-cell touch device of claim 1, further comprising: The touch driving unit and the touch sensing unit are located on the opposite substrate, the touch driving units and the touches The other of the control sensing units is located on the active device array substrate. The in-cell touch device of claim 1, wherein the orthographic projection of the shielding layer on the active device array substrate completely covers the orthographic projection of the gate driving circuit on the active device array substrate. The in-cell touch device of claim 1, wherein the in-cell touch device is a self-capacitive touch device. An in-cell touch device includes: an active device array substrate having a display area and a peripheral area, the peripheral area being connected to the display area, wherein the active device array substrate comprises: a substrate; a plurality of active components, an array Arranging on the substrate, in the display area; a plurality of pixel electrodes disposed on the substrate and located in the display area, wherein the pixel electrodes are electrically connected to the corresponding active elements respectively; a common electrode The grounding ring is disposed on the substrate and located in the peripheral region; at least one gate driving circuit is disposed on the active device array substrate and located in the peripheral region, wherein the at least one gate a pole driving circuit is disposed between the grounding ring and the display area; a pair of opposite substrates disposed opposite to the active device array substrate, wherein the total An electrode is disposed between the substrate and the pixel electrodes, or between the opposite substrate and the pixel electrodes; and a shielding layer is disposed between the active device array substrate and the opposite substrate. The orthographic projection of the shielding layer on the active device array substrate at least partially overlaps the orthographic projection of the gate driving circuit on the active device array substrate, and the shielding layer is identical to the pixel electrodes or the common electrode a film layer, and the shielding layer is electrically floating. The in-cell touch device of claim 5, further comprising: a plurality of touch driving units and a plurality of touch sensing units, the touch driving units and the touch sensing units One of the touch driving units and the other of the touch sensing units are located on the active device array substrate. The in-cell touch device of claim 5, wherein the orthographic projection of the shielding layer on the active device array substrate completely covers the orthographic projection of the gate driving circuit on the active device array substrate. The in-cell touch device of claim 5, wherein the in-cell touch device is a self-capacitive touch device.