TW202022571A - Active device substrate - Google Patents

Abstract

An active device substrate includes a substrate, an active device, a touch signal line, a first insulating layer, a touch electrode, a second insulating layer, a pixel electrode and a first bridging element. The touch signal line is disposed on the substrate. The first insulating layer is disposed on the touch signal line and has a first contact window overlapping a contact portion of the touch signal line. The touch electrode is disposed on the first insulating layer and has a contact portion. The second insulating layer is disposed on the touch electrode and has a second contact window. The second contact window overlaps with the contact portion of the touch electrode and the first contact window of the first insulating layer. The first bridging element is disposed on the second insulating layer and separated from the pixel electrode. The first bridging element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window.

Description

Active component substrate

The present invention relates to a substrate, and particularly to an active device substrate.

Generally speaking, liquid crystal displays can be divided into two types: amorphous silicon thin film transistor liquid crystal displays and low temperature poly-silicon thin film transistor liquid crystal displays. Different from traditional amorphous silicon thin-film transistors, low-temperature polysilicon thin-film transistors have better electron mobility and can produce smaller-sized thin-film transistors, which can increase aperture ratio, increase display brightness and reduce power consumption .

However, in the manufacturing process of low-temperature polysilicon thin-film transistor liquid crystal displays, 10 to 11 photomask processes are usually used in the production of pixel structures, compared with 7 to 8 processes for amorphous silicon thin-film transistor liquid crystal displays. For the manufacturing process, the low-temperature polysilicon thin film transistor liquid crystal display must spend more process time and higher cost, and the process steps are also very complicated.

The invention provides an active component substrate, which can simplify the manufacturing process and increase the productivity.

The active device substrate of the present invention includes a base, an active device, a touch signal line, a first insulating layer, a touch electrode, a second insulating layer, a pixel electrode, and a first bridge element. The substrate has an active area and a peripheral area outside the active area. The active element is arranged on the active area of the substrate. The touch signal line is arranged on the substrate. The first insulating layer is disposed on the touch signal line and has a first contact window overlapping with the contact portion of the touch signal line. The touch electrode is arranged on the first insulating layer and has a contact portion. The second insulating layer is disposed on the touch electrode and has a second contact window. The second contact window overlaps the contact portion of the touch electrode and the first contact window of the first insulating layer. The pixel electrode is arranged on the second insulating layer and is electrically connected to the active element. The first bridge element is arranged on the second insulating layer and separated from the pixel electrode. The first bridge element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window.

In an embodiment of the present invention, the aforementioned first insulating layer has sidewalls defining the first contact window. The side wall of the contact portion of the touch electrode is substantially flush with the side wall of the first insulating layer.

In an embodiment of the present invention, the vertical projection edge portion of the first contact window on the substrate substantially overlaps the vertical projection edge portion of the touch electrode contact portion on the substrate.

In an embodiment of the present invention, the aforementioned touch signal line extends in the first direction. The edge portion of the vertical projection of the touch portion of the touch electrode on the substrate and the first direction have an angle α, and 0 ^o ≦α≦90 ^o .

In an embodiment of the invention, the above-mentioned active device substrate further includes a first signal line. The first signal line is electrically connected to the active element, and is interleaved with the touch signal line. Wherein, the first signal line extends in the second direction, and the edge portion of the vertical projection of the contact portion of the touch electrode on the substrate and the second direction sandwich an angle β, and 0 ^o ≦β≦90 ^o .

In an embodiment of the present invention, the aforementioned touch signal line extends in the first direction. The second contact window has a first part and a second part which respectively overlap the contact part of the touch electrode and the first contact window of the first insulating layer. The first part of the second contact window and the second part of the second contact window are arranged in the third direction, and the first direction is staggered with the third direction.

In an embodiment of the present invention, the aforementioned active device substrate further includes a pad and a dielectric layer. The pads are arranged in the peripheral area. The dielectric layer is disposed on the pad and has at least one third contact window overlapping the pad. Wherein, the touch signal line is disposed on the dielectric layer and has a first end disposed in the peripheral area. The first end portion of the touch signal line is arranged in at least one third contact window of the dielectric layer and directly makes electrical contact with the pad.

In an embodiment of the present invention, the aforementioned active device substrate further includes a touch switch, a dielectric layer, and a second bridge element. The touch switch is arranged in the peripheral area of the active device substrate. The dielectric layer is arranged on the touch switch. Wherein, the touch signal line is arranged on the dielectric layer and has a second end. The first insulating layer has a fourth contact window and a fifth contact window respectively overlapping the part of the touch switch and the second end of the touch signal line. The second insulating layer has a sixth contact window and a seventh contact window overlapping the fourth contact window and the fifth contact window, respectively. The second bridging element is arranged on the second insulating layer. The second bridge element is electrically connected to a part of the touch switch through the fourth contact window of the first insulating layer and the sixth contact window of the second insulating layer. The second bridge element is electrically connected to the second end of the touch signal line through the fifth contact window of the first insulating layer and the seventh contact window of the second insulating layer.

In an embodiment of the present invention, the fourth contact window of the first insulating layer and the sixth contact window of the second insulating layer are substantially aligned.

In an embodiment of the present invention, the fifth contact window of the first insulating layer and the seventh contact window of the second insulating layer are substantially aligned.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below and described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic top view of an active device substrate according to an embodiment of the invention. 2A to 2I are schematic top views of a manufacturing process of an active device substrate according to an embodiment of the present invention, wherein FIGS. 2A to 2I correspond to the region R1 in FIG. 1. 3A to 3I are cross-sectional schematic diagrams of a manufacturing process of an active device substrate according to an embodiment of the present invention, wherein FIGS. 3A to 3I correspond to the section lines A-A' and B-B' of FIGS. 2A to 2I.

Please refer to FIG. 1, FIG. 2I and FIG. 3I. The active device substrate 100 includes a base 110 having an active area 100a and a peripheral area 100b outside the active area 100a. The base 110 is used to carry other components of the active device substrate 100. For example, in this embodiment, the material of the substrate 110 may be glass, quartz, organic polymers, or opaque/reflective materials (for example, wafers, ceramics, or other applicable materials), or Other applicable materials.

2A to FIG. 2I and FIG. 3A to FIG. 3I illustrate the manufacturing process of each component in the active area 100a as an example.

2A and 3A, first, a substrate 110 is provided, and a semiconductor layer is formed on the substrate 110, and the semiconductor layer has a plurality of semiconductor patterns 111. In this embodiment, the material of the semiconductor pattern 111 is, for example, poly-silicon, but the invention is not limited to this.

2B and 3B, then, a gate insulating layer 112 is formed to cover the semiconductor pattern 111 and the substrate 110. Then, a first signal line 113 (shown in FIG. 2B) and a gate electrode 113a (shown in FIG. 2B) are formed on the gate insulating layer 112. The first signal line 113 extends along the second direction D2. The first signal line 113 is electrically connected to the gate electrode 113a. In other words, the first signal line 113 may be a scan line. In this embodiment, the gate 113a is, for example, a part of the first signal line 113, but the invention is not limited to this.

2C and 3C, then, a barrier layer 114 is formed, and the barrier layer 114 covers the first signal line 113 and the gate insulating layer 112. The barrier layer 114 has contact windows 114a and 114b, respectively exposing two ends of the semiconductor pattern 111.

Please refer to FIG. 2D and FIG. 3D. Then, a second signal line 115, a source 115b and a drain 115a are formed on the barrier layer 114. 2C, FIG. 2D, FIG. 3C and FIG. 3D, the source 115b is filled into the contact window 114b to be electrically connected to one end of the semiconductor pattern 111. The drain electrode 115a is separated from the source electrode 115b, and the contact window 114a is filled to be electrically connected to the other end of the semiconductor pattern 111. The semiconductor pattern 111, the gate electrode 113a, the source electrode 115b and the drain electrode 115a can form the active device 120. The second signal line 115 is electrically connected to the source 115b. In other words, the second signal line 115 may be a data line. The first signal line 113 substantially extends along the second direction D2, the second signal line 115 substantially extends along the first direction D1, and the first direction D1 and the second direction D2 are staggered. For example, in this embodiment, the first direction D1 and the second direction D2 may be substantially perpendicular, but the invention is not limited thereto.

2E and 3E, and then, a dielectric layer (or flat layer) 116 is formed to cover the second signal line 115, the drain 115a, the source 115b, and the blocking layer 114. Wherein, the dielectric layer 116 has a contact window 116a (shown in FIG. 2E), and the contact window 116a exposes a part of the drain 115a.

Please refer to FIG. 2F and FIG. 3F, and then, a touch signal line 130 is formed on the dielectric layer 116. In this embodiment, the touch signal line 130 can selectively extend in the first direction D1 and overlap the second signal line 115.

Please refer to FIG. 2G and FIG. 3G. Then, a first insulating material layer 140a is formed to cover the touch signal line 130 and the dielectric layer 116. Then, the touch electrode 150 is formed on the first insulating material layer 140a. The touch electrode 150 exposes part of the first insulating material layer 140a.

Please refer to FIG. 2H and FIG. 3H, then, a second insulating material layer 160a is formed to cover the touch electrode 150 and the first insulating material layer 140a.

Please refer to FIG. 2I and FIG. 3I. Then, the first insulating material layer 140a and the second insulating material layer 160a are simultaneously patterned using the same mask to form the first insulating layer 140 and the second insulating layer 160. The first insulating layer 140 has a first contact window 141 overlapping the contact portion 131 of the touch signal line 130. The second insulating layer 160 has a second contact window 161 overlapping the contact portion 151 of the touch electrode 150 and the first contact window 141 of the first insulating layer 140.

In this embodiment, the first insulating layer 140 and the second insulating layer 160 are simultaneously patterned using the same mask, and the first part 161a of the second contact window 161 of the second insulating layer 160 is in touch The second portion 161b of the second contact window 161 of the second insulating layer 160 is not on the touch electrode 150. Therefore, the sidewall 142 of the first contact window 141 defined by the first insulating layer 140 is connected to the touch electrode 150. The side walls 152 of the contact portion 151 of 150 are substantially aligned. That is, a part of the edge of the vertical projection of the first contact window 141 on the substrate 110 and a part of the edge of the vertical projection of the contact portion 151 of the touch electrode 150 on the substrate 110 substantially overlap.

Please refer to FIG. 2I and FIG. 3I. Then, the pixel electrode 170 and the first bridge element 180 are formed on the second insulating layer 150. The pixel electrode 170 is separated from the first bridge element 180. The pixel electrode 170 is electrically connected to the active device 120. The first bridge element 180 is electrically connected to the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130 through the first contact window 141 and the second contact window 161. The touch electrode 150 is electrically connected to the touch signal line 130 to sense the touch action during the touch period. In addition, the touch electrode 150 overlaps the pixel electrode 170, and the touch electrode 150 and the pixel electrode 170 are used to drive a display medium (for example, but not limited to: liquid crystal) during the display period. In other words, the touch electrode 150 can be regarded as a common electrode during the display period. At this time, the production of the active device substrate 100 (marked in FIG. 1) is completed. For example, in this embodiment, the pixel electrode 170 may be a transparent conductive layer, which includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, and indium germanium. Zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above, but the present invention is not limited thereto.

It is worth mentioning that, in this embodiment, the same mask is used to form the first contact window 141 and the second contact window 161 overlapping the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130. The first bridging element 180 filled in the first contact window 141 and the second contact window 161 is used to electrically connect the contact portion 151 of the touch electrode 150 and the contact portion 131 of the touch signal line 130, and the first bridging element 180 can be used The existing film layer (for example, but not limited to: the film layer to which the pixel electrode 170 belongs) is made, therefore, the number of masks required for manufacturing the active device array substrate 100 can be reduced, and the manufacturing cost can be reduced.

FIG. 4 is an enlarged schematic diagram of the region R4 corresponding to FIG. 2I. 2I and FIG. 4, in this embodiment, the touch signal line 130 extends in the first direction D1. The portion of the edge 151a of the vertical projection of the touch portion 151 of the touch electrode 150 on the substrate 110 and the first direction D1 have an angle α, and 0 ^o ≦α≦90 ^o , preferably 30 ^o ≦α≦60 ^o . In addition, in this embodiment, the first signal line 113 is electrically connected to the active device 120 and interleaved with the touch signal line 130. Wherein, the first signal line 113 extends in the second direction D2, and a part of the edge of the vertical projection of the contact portion 151 of the touch electrode 150 on the substrate 110 and the second direction D2 sandwich an angle β, and 0 ^o ≦ β ≦90 ^o , preferably 30 ^o ≦α≦60 ^o .

3I and FIG. 4, in this embodiment, the second contact window 161 has a first portion 161a and a second portion 161b, respectively, and the touch electrode 150 contact portion 151 and the first contact window of the first insulating layer 140 141 overlap. The first portion 161a of the second contact window 160 and the second portion 161b of the second contact window 160 are arranged in the third direction D3, and the first direction D1 and the third direction D3 are staggered. That is, in this embodiment, the second contact window 161, the contact portion 151 of the touch electrode 150, and the contact portion 131 of the touch signal line 130 may be substantially rhombuses, and the sides of the rhombus are opposite to the first The signal line 113 and the second signal line 115 are inclined. Thereby, the second contact window 161, the contact portion 151 of the touch electrode 150, and the contact portion 131 of the touch signal line 130 can be disposed between the adjacent pixel electrodes 170 with a smaller area, thereby improving the active The aperture ratio of the element substrate 100.

FIG. 5A is an enlarged schematic diagram of the region R2 corresponding to FIG. 1. Fig. 5B is a schematic cross-sectional view corresponding to the section line C-C' of Fig. 5A. The various stacks and manufacturing methods of the region R2 in the peripheral region 100b are generally similar to the various stacks and manufacturing methods of the region R1 in the active region 100a, and will not be repeated here.

Referring to FIGS. 5A and 5B, in this embodiment, the active device substrate 100 further includes a pad 115c, which is electrically connected to a driver chip (not shown), and is disposed in the peripheral area 100b. The dielectric layer 116 is disposed on the pad 115c and has at least one third contact window 116b overlapping the pad 115c. Wherein, the touch signal line 130 is disposed on the dielectric layer 116b and has a first end 132 disposed in the peripheral area 100b. The first end 132 of the touch signal line 130 is electrically connected to the pad 115c through the third contact window 116b of the dielectric layer 116b. Specifically, in this embodiment, the first end 132 of the touch signal line 130 is disposed in at least one third contact window 116b of the dielectric layer 116 and directly electrically contacts the pad 115c.

FIG. 6A is an enlarged schematic diagram of the region R3 corresponding to FIG. 1. Fig. 6B is a schematic cross-sectional view corresponding to the section line D-D' of Fig. 6A. The various stacks and manufacturing methods of the region R3 in the peripheral region 100b are substantially similar to the various stacks and manufacturing methods of the region R1 in the active region 100a, and will not be repeated here.

6A and 6B, in this embodiment, the active device substrate 100 further includes a touch switch 121 and a second bridge element 180a. The touch switch 121 is disposed in the peripheral area 100 b of the active device substrate 110. The dielectric layer 116 is disposed on the touch switch 121. The dielectric layer 116 has a contact window 116 d overlapping a part 121 a of the touch switch 121. The touch signal line 130 is disposed on the dielectric layer 116 and has a second end 133. The first insulating layer 140 has a fourth contact window 144 and a fifth contact window 145. The fourth contact window 144 overlaps the part 121 a of the touch switch 121. The fifth contact window 145 overlaps the second end 133 of the touch signal line 130. The second insulating layer 160 has a sixth contact window 162 and a seventh contact window 163. The sixth contact window 162 overlaps the fourth contact window 144, and the seventh contact window 163 overlaps the fifth contact window 145. In this embodiment, the vertical projection of the fourth contact window 144 on the substrate 110 and the vertical projection of the sixth contact window 162 on the substrate 110 can be selectively located within the vertical projection of the contact window 116d on the substrate 110. The invention is not limited to this.

The second bridge element 180 a can be electrically connected to the portion 121 a of the touch switch 121 through the fourth contact window 144 of the first insulating layer 140 and the sixth contact window 162 of the second insulating layer 160. The second bridging element 180 a can be electrically connected to the second end 133 of the touch signal line 130 through the fifth contact window 145 of the first insulating layer 140 and the seventh contact window 163 of the second insulating layer 160.

In this embodiment, the fourth contact window 144 of the first insulating layer 140 and the sixth contact window 162 of the second insulating layer 160 are substantially aligned. In this embodiment, the fifth contact window 145 of the first insulating layer 140 and the seventh contact window 163 of the second insulating layer 160 are substantially aligned.

To sum up, in the manufacturing process of the active device substrate of an embodiment of the present invention, the same mask is used to form the first contact window of the first insulating layer overlapping the contact portion of the touch electrode and the contact portion of the touch signal line And the second contact window of the second insulating layer, using the first bridge element filled in the first contact window and the second contact window to electrically connect the contact portion of the touch electrode and the contact portion of the touch signal line, In addition, the first bridge element can be made using an existing film layer (for example, but not limited to: the film layer to which the pixel electrode belongs). Therefore, the number of masks required for manufacturing the active device array substrate can be reduced, and the manufacturing cost can be reduced. .

Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100: Active component substrate 100a: Active area 100b: Peripheral area 110: Base 111: Semiconductor pattern 112: Gate insulating layer 113: First signal line 113a: Gate 114: Barrier layer 114a, 114b: Contact window 115: Second signal Line 115a: drain 115b: source 115c: pad 116: dielectric layer 116a, 116d: contact window 116b: third contact window 120: active component 121: touch switch 121a: part 130: touch signal line 131: Contact 132: first end 133: second end 140: first insulating layer 140a: first insulating material layer 141: first contact window 142: side wall 144: fourth contact window 145: fifth contact window 150: Touch electrode 151: contact portion 151a: edge 152: side wall 160: second insulating layer 160a: second insulating material layer 161: second contact window 161a: first part 161b: second part 162: sixth contact window 163: first Seven contact window 170: pixel electrode 180: first bridge element 180a: second bridge element D1: first direction D2: second direction D3: third direction G: gate R1, R2, R3, R4: area α, β: Angle

FIG. 1 is a schematic top view of an active device substrate according to an embodiment of the invention. 2A to 2I are schematic top views of a manufacturing process of an active device substrate according to an embodiment of the invention. 3A to 3I are schematic cross-sectional views of the manufacturing process of the active device substrate according to an embodiment of the invention. FIG. 4 is an enlarged schematic diagram of the region R4 corresponding to FIG. 2I. FIG. 5A is an enlarged schematic diagram of the region R2 corresponding to FIG. 1. Fig. 5B is a schematic cross-sectional view corresponding to the section line C-C' of Fig. 5A. FIG. 6A is an enlarged schematic diagram of the region R3 corresponding to FIG. 1. Fig. 6B is a schematic cross-sectional view corresponding to the section line D-D' of Fig. 6A.

110: base

111: Semiconductor pattern

112: gate insulation

114: Barrier Layer

115: second signal line

115a: Drain

116: Dielectric layer

130: Touch signal cable

131: Contact

140: first insulating layer

141: first contact window

142: Side wall

150: touch electrode

151: Contact

160: second insulating layer

161: second contact window

161a: Part One

161b: Part Two

180: The first bridge element

Claims (10)

An active device substrate includes: a base having an active area and a peripheral area outside the active area; an active element arranged on the active area of the base; a touch signal line arranged on the base; The first insulating layer is arranged on the touch signal line and has a first contact window overlapping with a contact portion of the touch signal line; a touch electrode is arranged on the first insulating layer and has a Contact portion; a second insulating layer disposed on the touch electrode, and has a second contact window, wherein the second contact window and the contact portion of the touch electrode and the first insulating layer The contact window overlaps; a pixel electrode is disposed on the second insulating layer and electrically connected to the active element; and a first bridge element is disposed on the second insulating layer and is separated from the pixel electrode , Wherein the first bridge element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window. The active device substrate according to claim 1, wherein the first insulating layer has a side wall defining the first contact window, a side wall of the contact portion of the touch electrode and the first insulating layer The side walls are substantially aligned. The active device substrate according to claim 1, wherein a part of an edge of a vertical projection of the first contact window on the substrate and a vertical projection of the contact portion of the touch electrode on the substrate A part of one edge of the coincides substantially. The active device substrate according to claim 1, wherein the touch signal line extends in a first direction, and a part of an edge of a vertical projection of the contact portion of the touch electrode on the substrate and The first direction has an angle α, and 0 ^o ≦α≦90 ^o . The active device substrate described in claim 1 further includes: a first signal line electrically connected to the active device and interleaved with the touch signal line, wherein the first signal line is a second signal line A part of an edge of a vertical projection of the contact portion of the touch electrode on the substrate and the second direction sandwich an angle β, and 0 ^o ≦ β ≦ 90 ^o . The active device substrate according to claim 1, wherein the touch signal line extends in a first direction; the second contact window has a first part and a second part which are respectively connected to the touch electrode The contact portion and the first contact window of the first insulating layer overlap, the first part of the second contact window and the second part of the second contact window are arranged in a third direction, and the first direction is aligned with The third direction is interleaved. The active device substrate according to the first item of the scope of patent application further includes: a pad disposed on the peripheral area of the base; and a dielectric layer disposed on the pad and having an overlap with the pad At least one third contact window, wherein the touch signal line is disposed on the dielectric layer and has a first end disposed in the peripheral area, and the first end of the touch signal line is disposed on the intermediate The at least one third contact window of the electrical layer is directly in electrical contact with the pad. The active device substrate according to claim 1 of the scope of patent application further includes: a touch switch disposed on the peripheral area of the active device substrate; a dielectric layer disposed on the touch switch, wherein the touch switch The signal line is disposed on the dielectric layer and has a second end, and the first insulating layer has a fourth contact window overlapping with a part of the touch switch and the second end of the touch signal line, respectively And a fifth contact window, the second insulating layer has a sixth contact window and a seventh contact window respectively overlapping the fourth contact window and the fifth contact window; and a second bridge element disposed on the On the second insulating layer, the fourth contact window through the first insulating layer and the sixth contact window of the second insulating layer are electrically connected to the part of the touch switch, and through the first insulating layer The fifth contact window and the seventh contact window of the second insulating layer are electrically connected to the second end of the touch signal line. According to the active device substrate described in claim 8, wherein the fourth contact window of the first insulating layer and the sixth contact window of the second insulating layer are substantially aligned. The active device substrate according to claim 8 of the patent application, wherein the fifth contact window of the first insulating layer and the seventh contact window of the second insulating layer are substantially aligned.

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