CN107881551A - The material buffer device of single crystal growing furnace - Google Patents
The material buffer device of single crystal growing furnace Download PDFInfo
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- CN107881551A CN107881551A CN201711387255.8A CN201711387255A CN107881551A CN 107881551 A CN107881551 A CN 107881551A CN 201711387255 A CN201711387255 A CN 201711387255A CN 107881551 A CN107881551 A CN 107881551A
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- plate
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- shell body
- buffer device
- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 title claims abstract description 50
- 239000002210 silicon-based material Substances 0.000 claims abstract description 49
- 239000007787 solid Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 30
- 239000010703 silicon Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- 238000007664 blowing Methods 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 238000005381 potential energy Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 235000021050 feed intake Nutrition 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 241000469816 Varus Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of material buffer device of single crystal growing furnace, including cylinder, right baffle-plate and right shell body.The upper and lower side of cylinder described in the cylinder is open.Equal, or both one piece of the difference of the quantity of the right baffle-plate and right shell body, and both alternate settings.Each piece of right baffle-plate is fixedly connected on the inwall of cylinder in the way of right low left high.Each piece of right shell body is fixedly connected on the inwall of cylinder according to left low right high mode, and positioned at the opposite of right baffle-plate.There is a certain distance, the distance is more than the particle diameter of solid silicon material particle input in use, and the lower edge of upper side shield is located at the top of the plate body of adjacent lower side shield between adjacent right baffle-plate and right shell body.The material buffer device of the present invention using when advantageously reduce production cost, the stabilization that does not influence surrounding environment, be advantageous to crystal grows and is not in polycrystalline growth phenomenon.
Description
Technical field
The present invention relates to a kind of part of single crystal growing furnace, more particularly to a kind of material buffer device of single crystal growing furnace.
Background technology
Silicon materials can be divided into monocrystalline silicon, polysilicon and non-crystalline silicon according to crystal structure.Single crystal silicon material refers to that silicon atom exists
The regular periodically uninterrupted arrangement of three dimensions, forms a complete crystalline material, what material character embodied be it is each to
The opposite sex, i.e., various properties all have differences in different crystallographic directions.Polycrystalline silicon material then refers to by two or more size not
The silicon materials of same monocrystalline silicon composition, what its material character embodied is isotropism.Amorphous silicon material refers to silicon atom short
Apart from interior ordered arrangement, silicon materials disorderly arranged in long range, the property of its material show isotropism.For polycrystalline
For silicon, the elemental silicon of melting when being solidified under the conditions of supercooling, silicon atom with diamond lattice morphologic arrangement into many nucleus, such as
These nucleus of fruit grow up to the different crystal grain of high preferred orientation, then these crystal grain combine, and crystallize into polysilicon.If the simple substance of melting
For silicon in solidification, silicon atom is arranged in many nucleus with diamond lattice, if these nucleus grow up to high preferred orientation identical crystalline substance
Grain, then these crystal grain it is parallel combine just crystallize into monocrystalline silicon.Monocrystalline silicon has metalloid physical property, there is weaker lead
Electrically, its electrical conductivity increases with the rise of temperature, there is significant semiconduction.Ultrapure monocrystalline silicon is intrinsic semiconductor.
The method of currently manufactured monocrystalline silicon mainly has vertical pulling method, magnetic field Czochralski method, zone-melting process and double crucible crystal pulling methods.It is single
Brilliant stove is one kind in protective gas（Based on nitrogen, helium）In environment, the polycrystalline materials such as polysilicon are melted with heater, used
The equipment of Grown by CZ Method dislocation-free monocrystalline.Single crystal growing furnace is widely used in the silicon single crystal rod manufacture of solar energy power generating and partly leads list
The manufacture of crystalline silicon rod.Solar energy power generating is the generally acknowledged clean energy resource in the whole world, and it is inexhaustible, is the mankind
The preferable energy needed for development, countries in the world are all being greatly developed.But its development is limited by two bottlenecks, first, restricted
In the photoelectric transformation efficiency of material, second, solar photovoltaic electrification component manufacturing cost is higher, especially required for manufacture early stage
The energy of consumption is higher, therefore overall applicability and spreading speed are unhappy.In terms of photoelectric transformation efficiency, although having in recent years
Certain raising, the cost of unit component also have decline, have promoted the development of photovoltaic industry.But because conversion efficiency has limit limit
System, room for promotion is more and more narrow, and follow-up developments space is seldom, so that the factor of conversion efficiency is to follow-up fast-developing photovoltaic generation
Kinetic energy it is less and less.
The improvement for reducing the energy consumption of manufacture monocrystalline silicon at present is carried out mainly around two aspects, first, changing the side to feed intake
Formula, also blowing out is fed intake and changes into not blowing out and feeds intake.Second, changing pulling monocrystal silicon rod method, namely list is drawn by the method for fractional steps
Crystalline silicon rod changes into continuity method pulling monocrystal silicon rod.
Fed intake for not blowing out, Chinese patent literature CN101403136A（Number of patent application be 200810175871.1 with
Lower abbreviation document 1）Disclose a kind of monocrystal stove continuous dosing device and the monocrystal stove provided with the device.Document 1 has more
One monocrystal stove concubine for being arranged on monocrystal stove main chamber top, described monocrystal stove continuous dosing device are arranged on concubine
In.Described monocrystal stove device includes barrel, and the base varus and card of barrel set a silicon chip.It is former equipped with silicon in barrel during use
Material, after barrel enters concubine, it is seated on the bearing pin for the upper end open for being arranged on main chamber, is led to by its upper outside from top to bottom
Corresponding transmission mechanism is crossed so that depression bar moves downward, so as to crush silicon chip, and so that silicon chip falls into quartz together with silicon raw material
The molten silicon liquid level of crucible, and complete to feed intake.The charging device of document 1 can be under conditions of not blow-on, continuously to silica crucible
Inside feed intake so that monocrystal stove yield and yield rate increase, and reduce energy consumption and cost.But structure be present and operate more multiple
The problem of miscellaneous.Further, since this feeding mode is disposably to cast a furnace charge, after stove raw material crystal pulling production is completed,
In the case of not blowing out, to prepare the raw material of a new stove, and the improvement of the aspect that feeds intake carried out, therefore silicon single crystal rod can not be carried out
Continuous drawing.
Chinese patent literature CN10231228A（Number of patent application is 201110186157.4, hereinafter referred to as document 2）It is open
A kind of outside continuous dosing mechanism for single crystal growing furnace.The batch charging mechanism includes the feed bin of a with closure.Bin bottom
If dispensing valve.Dispensing valve is connected to a blowing inner tube.A blowing outer tube is arranged outside blowing inner tube.Blowing outer tube with
One is used to realize that the transmission mechanism that blowing outer tube stretches along blowing inner tube extending direction connects.Blowing inner tube, blowing outer tube and
Transmission mechanism is located in airtight cylinder.Airtight cylinder bottom sets a ball valve or flap valve.The main furnace chamber top of single crystal growing furnace is provided with one
Dog-house, dog-house are tightly connected with ball valve or flap valve.Document 2 can realize charging in the case where not needing blowing out, so as to
Continuously grow more crystal.Although the feeding mode saves blowing out cooling, wipes stove, feed, vacuumize, needed for the step such as material
Time, production efficiency greatly improved.But it is when launching polycrystalline silicon material, material directly under gravity along inner tube and
The passage that outer tube is formed declines, and produces larger speed, therefore uncontrollable to the stability of liquid level.
In terms of continuity method pulling monocrystal silicon rod, Chinese patent literature CN106544726A is referred to（Application No.
201611076542 .2, hereinafter referred to as document 3）It is disclosed that " a kind of crystal pulling, charging, material, separation impurity are synchronously carried out
The method of continuous drawing silicon single crystal rod ".This method, which is included in crucible, to feed, and heats material, and crystal pulling, charging, material, separation are miscellaneous
Matter is synchronously carried out.The rod of specific length or certain length is pulled into by a lifting head on pulling apparatus；Lifted by changing
Continue crystal pulling, charging, material, separation impurity after another lifting head on device；Repeat to draw until silicon rod quality is because of impurity
Influence is near the mark requirement, then blowing out, prepurging.This method is synchronously carried out by crystal pulling, charging, material, separation impurity, is saved
Former charging, material, crystal bar cooling, blowing out, the time of prepurging, by two lifting heads that can repeat switching, cool down, take
Rod is all synchronously carried out with crystal pulling, greatlys save the time.Foundry alloy, consumption and addition one are progressively added in pulling process
Cause, therefore the quality of silicon rod is substantially increased with the method crystal pulling of the document, can be controlled in crystal pulling so that pulling out crystal matter
Amount and addition silicon material uniform quality, so as to may be such that long brilliant liquid level position is constant, the temperature fluctuation of long brilliant liquid level can be long with very little
Will be very stable when brilliant, ordinary circumstance material quality has no problem, and continuous drawing can be with more than one month.But this method
Feeding intake, aspect does not provide specific scheme, if using the scheme of prior art, liquid level will be caused unstable or molten
The splashing of SiClx liquid.
Fig. 2 of document 2 is seen, if it is considered to document 3 uses during manufacture silicon single crystal rod and semiconductor monocrystal silicon rod
If device shown in the figure, it is necessary first to which solid silicon material is knocked down to the master positioned at single crystal growing furnace by outside continuous dosing mechanism 1
Furnace chamber（Namely body of heater）In crucible in, the solid silicon material for making to have knocked down in crucible by heater is molten into liquid silicon material,
Then crystal is made in the liquid silicon material circumgyration stretch after fusing using seed crystal.The size of the solid silicon material of prior art is in 50mm
Left and right or the liquid silicon in more than 50mm, such solid silicon material crucible dropped to from the charging aperture of body of heater in body of heater
The potential energy of the liquid level of material is multiplied by the quality of solid silicon material for charging aperture to the distance of liquid level of liquid silicon material of body of heater.Therefore, Gu
Can be very big to the impulsive force of liquid level when body silicon material throws into the liquid level in crucible, very big fluctuation, liquid silicon material occurs in liquid level
Easily splash and, and crystal growth needs stable liquid level environment, there is big fluctuation in liquid level, can influence the stable life of crystal
It is long, or even there is polycrystalline growth phenomenon.If reduce the decline potential energy of solid silicon material by reducing the size of solid silicon material（Will
Solid silicon feed powder is broken）, and comminuted solids silicon material needs special equipment and personnel, can so make the production cost of silicon single crystal rod big
Big increase, and comminuted solids silicon material can also influence surrounding environment.
The content of the invention
Production cost is advantageously reduced during it is an object of the invention to propose a kind of use, surrounding environment is not influenceed, is favourable
Grown in the stabilization of crystal and be not in the material buffer device of the single crystal growing furnace of polycrystalline growth phenomenon.
To reach above-mentioned purpose, the present invention adopts the following technical scheme that：The material buffer device bag of the single crystal growing furnace of the present invention
Include cylinder, right baffle-plate and right shell body；The upper end of described cylinder is provided with charging aperture, and lower end is provided with discharging opening；The right baffle-plate and
Equal, or both one piece of the difference of the quantity of right shell body, and both alternate settings；Each piece of right baffle-plate according to right low left high side
Formula is fixedly connected on the inwall of cylinder；Each piece of right shell body is fixedly connected on the inwall of cylinder according to left low right high mode,
And positioned at the opposite of right baffle-plate；There is a certain distance, the distance is more than institute in use between adjacent right baffle-plate and right shell body
The particle diameter of the solid silicon material particle of input, and the lower edge of upper side shield is located at the top of the plate body of adjacent lower side shield.
Described material buffer device be material be quartz glass integral piece, and right baffle-plate except the right along in addition to its
Remaining edge position is connected with the inwall of cylinder, the edge of remaining in addition to the left margin position of right shell body also with cylinder
Wall is connected.
The cylinder of described material buffer device is shaped as cylindrical tube, elliptical cylinder-shape cylinder either cuboid
Cylinder.
The cylinder of the preferred cuboid of cylinder of described material buffer device, including left side wall, right side wall, antetheca and after
Wall.The left side wall, antetheca, right side wall, rear wall are sequentially connected, and rear wall is connected with left side wall again, so as to enclose upper and lower side
The cylinder for the cuboid being open；The right baffle-plate is in the way of right low left high by its front edge, left margin and back edge
It is connected in turn on antetheca, left side wall and rear wall；The right shell body according to left low right high mode by its front along, the right edge and
Back edge is connected in turn on antetheca, right side wall and rear wall.
Minimum range between the right baffle-plate and right shell body of described material buffer device is preferably greater than 50mm.
The right baffle-plate of described material buffer device is rectangular panel body, and the left and right edge of its upper surface is along corresponding level
Line is set, and the acute angle of the angle of cut of the right of right baffle-plate along plane where the upper surface of place horizontal plane and right baffle-plate is 40 ° to 50 °
Angle.
The right shell body of described material buffer device is rectangular panel body, and the left and right edge of its upper surface is along corresponding level
Line is set, and the acute angle of the angle of cut of plane is 40 ° to 50 ° where the upper surface of horizontal plane and right shell body where the left margin of right shell body
Angle.
The present invention has following good effect：（1）Because the present invention includes cylinder, right baffle-plate and right shell body, the cylinder
The cylinder for the cuboid being open for upper and lower side, right baffle-plate are inclined on the inwall of cylinder in a manner of right low left high,
Right shell body then by it is left it is low it is right it is high in a manner of be inclined on the inwall of cylinder, and alternate cloth between each right baffle-plate and right shell body
Put.In embodiments of the invention 1, the distance between adjacent right baffle-plate and right shell body（Refer between both immediate positions
Distance）More than the size of solid silicon material particle, 50mm is greater than, thus solid silicon material is fallen by the charging aperture of cylinder upper end
When lower, first fall in the first right shell body, then fall successively in the first right baffle-plate, the second right shell body, the second right baffle-plate and the 3rd right gear
On plate, the discharging opening that then can just pass through cylinder reaches the liquid level of the liquid silicon material in silica crucible, can so reduce
The decline potential energy of solid silicon material, makes the liquid level of liquid silicon material very big fluctuation can or can not occur, and liquid silicon material is also not easy to splash
Come, it is ensured that the stationarity of liquid level, be advantageous to the steady growth of crystal, be also not in polycrystalline growth phenomenon.（2）Due to using this
After the material buffer device of the single crystal growing furnace of invention, it is no longer necessary to reduced by reducing the size of solid silicon material under solid silicon material
Potential energy is dropped, special equipment and personnel is also no longer needed, so can substantially reduce the production cost of silicon single crystal rod, also will not be because
Surrounding environment is influenceed for comminuted solids silicon material.（3）Compared with prior art, it is of the invention to be not only suitable for for drawing new silicon
The charging again of a new stove for the solid silicon material of monocrystal rod, apply also for can be used for the solid silicon material for drawing new silicon single crystal bar
Continuous charging, the continuous charging being more suitable for during crystal pulling.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is Fig. 1 schematic top plan view.
Fig. 3 is the present invention and automatic feeding mechanism, the connection signal sketch of the body of heater of single crystal growing furnace, during actual crystal pulling crystal pulling fill
Put etc. and to be not drawn into.
Reference in above-mentioned accompanying drawing is as follows：The material buffer device 10 of single crystal growing furnace, cylinder 1, left side wall 11, right side wall
12, antetheca 13, rear wall 14, circumferential projection portion 15, right baffle-plate 2, the first right baffle-plate 21, the second right baffle-plate 22, right shell body 3, first
Right shell body 31, the second right shell body 32, the 3rd right shell body 33, solid silicon material 7, bell 100, charging aperture 101, insulation cover 102, automatically
Charging mechanism 103, crucible 104, guiding tube 105.
Embodiment
（Embodiment 1）
See Fig. 1 and Fig. 2, a kind of material buffer device of single crystal growing furnace is the integral piece that material is quartz glass, including cylinder 1 and more
Block baffle plate.Each piece of baffle plate is set gradually in the vertical direction, and is divided into the He of right baffle-plate 2 according to the difference of residing right position
Right shell body 3.The upper end of described cylinder 1 is provided with charging aperture, and lower end is provided with discharging opening.The quantity of the right baffle-plate 2 and right shell body 3
Equal, or both one piece of difference, and the 3 alternate setting of right baffle-plate 2 and right shell body.Each piece of right baffle-plate 2 is according to right low left high
Mode is fixedly connected on the inwall of cylinder 1, and right baffle-plate 2 except the right along in addition to remaining edge position with cylinder 1
Inwall is connected.Each piece of right shell body 3 is fixedly connected on the inwall of cylinder 1 according to left low right high mode, and positioned at right baffle-plate 2
Opposite, and inwall of the edge of remaining in addition to the left margin position of right shell body 3 also with cylinder 1 is connected.Adjacent left gear
There is a certain distance between plate 2 and right shell body 3, the distance is more than the particle diameter of solid silicon material particle input in use, and
And the lower edge of upper side shield（Refer to the right edge for right baffle-plate 2, refer to left margin for right shell body 3）Positioned at phase
The top of the plate body of adjacent lower side shield.
The cylinder 1 is preferably that upper end is provided with charging aperture, and lower end is provided with the housing of the cuboid of discharging opening, cylinder 1
It is protruding parts on the outside of upper end, the circumferential projection portion 15 as cylinder 1.The remainder of cylinder 1 is then cylinder main body.Cylinder main body
The size of length, width and height is 100 × 80 × 400, namely left and right is 100mm, front and rear be 80mm, be highly to length to length
400mm.In other embodiments, cylinder main body can also be cylindrical tube or elliptical cylinder-shape cylinder.
Cylinder 1 includes left side wall 11, right side wall 12, antetheca 13 and rear wall 14, and the wall thickness of 1 each side of cylinder is 5mm.It is described
Left side wall 11, antetheca 13, right side wall 12 and rear wall 14 are sequentially connected, and rear wall 14 is connected with left side wall 11 again, so as to surround cylinder
Body 1.
The right baffle-plate 2 and right shell body 3 are size identical rectangular plate body, and left and right to length be 80mm, it is front and rear to
Length is also 80mm, thickness of slab 3mm.The right baffle-plate 2 has 2 pieces, and according to order from top to bottom be referred to as first successively
The right baffle-plate 22 of right baffle-plate 21 and second.Each left baffle 2 is in the way of right low left high by its front edge, left margin and back
Edge is connected in turn on antetheca 13, left side wall 11 and rear wall 14, and each piece of right baffle-plate 2 is parallel to each other, and each left baffle 2
The left and right edge of upper surface is set along corresponding horizontal line, the upper table of the right of right baffle-plate 2 along place horizontal plane and right baffle-plate 2
The acute angle of the angle of cut of plane where face is the angle of 40 to 50 degree.
The right shell body 3 has 3 pieces, and according to order from top to bottom be referred to as the first right shell body 31, the second right gear successively
The right shell body 33 of plate 32 and the 3rd.Every piece of right shell body 3 according to left low right high mode by its front along, the right edge and back edge according to
It is secondary to be connected on antetheca 13, right side wall 12 and rear wall 14, and each piece of right shell body 3 is parallel to each other, and the upper table of every piece of right shell body 3
The left and right edge in face is set along corresponding horizontal line, horizontal plane where the left margin of right shell body 3 and the upper surface institute of right shell body 3
In the angle that the acute angle of the angle of cut of plane is 40 to 50 degree.
3 alternate arrangement of the right baffle-plate 2 and right shell body, the minimum range between adjacent right baffle-plate 2 and right shell body 3 are more than
50mm.In the vertical direction, the first right shell body 31 is located at the top of cylinder 1, and its left margin is located at the first right baffle-plate 21
The centre position of upward and downward, the left margin of the second right shell body 32 are located at the right edge and the second right baffle-plate 22 of the first right baffle-plate 21
The right is between, and the 3rd right shell body 33 is located at the bottom of cylinder 1, and the right edge of the first right baffle-plate 21 is located at the first right gear
Between the left margin of plate 31 and the left margin of the second right shell body 32, the right of the second right baffle-plate 22 is along positioned at the second right shell body 32
Between left margin and the left margin of the 3rd right shell body 33.
See Fig. 3, the material buffer device 10 of the single crystal growing furnace of the present embodiment when in use, using corresponding automatic feeding mechanism
103, and charging aperture 101 is set on bell 100, the charging aperture 101 can be arranged on the sidepiece of bell 100（It can also set
At the top of bell 100）.Material buffer device 10 is arranged on again on the insulation cover 102 of the thermal field component of single crystal growing furnace.Specific knot
Structure is that square mounting hole is opened up on insulation cover 102, and the size of the mounting hole is relative with the periphery size of the cylinder main body of cylinder 1
Should, cylinder 1 passes through the mounting hole from top to bottom, and is seated in the setting of insulation cover 102 mounting hole by its circumferential projection portion 15
Position.Either cylinder 1 is not provided with circumferential projection portion 15, and uses the corresponding terrace with edge hull shape of size, when cylinder 1 is by upper
To it is lower pass through mounting hole when, then be stuck on mounting hole.Certainly, cylinder 1 can also use the shape of round platform hull shape, and mounting hole selects
Select the circular port of corresponding size；Or cylinder 1 can also use the shape of elliptical table hull shape, and mounting hole selection corresponding size is ellipse
Circular port.
The bottom of material buffer device 10 is located at being actually reached in maximum height of the liquid level of the liquid silicon material in crucible 104
4 to 5 centimeters of side.The guiding tube that material is quartz glass is set also between charging aperture 101 and material buffer device 10
105.When solid silicon material 7 is knocked down the charging aperture 101 of single crystal growing furnace by automatic feeding mechanism 103, solid silicon material 7 passes through guide wire
105 be directed through after the charging aperture of cylinder 1 first falls in the first right shell body 31, then falls successively in the first right baffle-plate 21, second
In right shell body 32, the second right baffle-plate 22 and the 3rd right shell body 33, the discharging opening arrival that then can just pass through cylinder 1 is located at crucible
The liquid level of liquid silicon material in 104.The decline potential energy of solid silicon material 7 can be so reduced, makes the liquid level of liquid silicon material can or can not
There is very big fluctuation, liquid silicon material, which is also not easy to splash, to be come, it is ensured that the stationarity of liquid level, and be advantageous to carry out steadily crystal
Stretching, is also not in polycrystalline growth phenomenon.After material buffer device 10 using the single crystal growing furnace of the present invention, it is no longer necessary to pass through
The granular size of solid silicon material 7 is reduced to reduce the decline potential energy of solid silicon material 7, can so make the production cost of silicon single crystal rod big
It is big to reduce, it is not required that special disintegrating apparatus to be equipped with, so as to eliminate because of comminuted solids silicon material 7 and to the shadow of surrounding environment
Ring.
After the material buffer device of the single crystal growing furnace of the present embodiment is used for full-automatic continuous crystal-pulling single crystal growing furnace, it can make without crushing
Solid silicon material 7 put into after, crystal can stably stretch and polycrystalline growth phenomenon no longer occurs.
Above example and corresponding application are the explanations to the embodiment of the present invention, rather than to the present invention's
Limitation, person skilled in the relevant technique without departing from the spirit and scope of the present invention, can also make various
Convert and change and obtain corresponding equivalent technical scheme, therefore all equivalent technical schemes should be included into the present invention
Scope of patent protection.
Claims (7)
- A kind of 1. material buffer device of single crystal growing furnace, it is characterised in that：Including cylinder（1）, right baffle-plate（2）And right shell body（3）；Institute The cylinder stated（1）Upper end be provided with charging aperture, lower end is provided with discharging opening；The right baffle-plate（2）And right shell body（3）Quantity phase Deng, or both one piece of difference, and both alternate settings；Each piece of right baffle-plate（2）It is fixedly connected in the way of right low left high In cylinder（1）Inwall on；Each piece of right shell body（3）Cylinder is fixedly connected on according to left low right high mode（1）Inwall on, and Positioned at right baffle-plate（2）Opposite；Adjacent right baffle-plate（2）With right shell body（3）Between there is a certain distance, the distance is more than and made The particle diameter of input solid silicon material particle in, and the lower edge of upper side shield is located at the plate body of adjacent lower side shield Top.
- 2. the material buffer device of single crystal growing furnace according to claim 1, it is characterised in that：Described material buffer device is Material is the integral piece of quartz glass, and right baffle-plate（2）Except remaining edge position in addition to of the right and cylinder（1）It is interior Wall is connected, right shell body（3）The edge of remaining in addition to left margin position also and cylinder（1）Inwall be connected.
- 3. the material buffer device of single crystal growing furnace according to claim 1 or 2, it is characterised in that：Described cylinder（1）Shape Shape is the cylinder of cylindrical tube, elliptical cylinder-shape cylinder either cuboid.
- 4. the material buffer device of single crystal growing furnace according to claim 3, it is characterised in that：Described cylinder（1）It is rectangular The cylinder of the bodily form, including left side wall（11）, right side wall（12）, antetheca（13）And rear wall（14）；The left side wall（11）, antetheca （13）, right side wall（12）, rear wall（14）It is sequentially connected, and rear wall（14）Again with left side wall（11）It is connected, so as to enclose into upper The cylinder for the cuboid that lower end is open（1）；The right baffle-plate（2）By its front edge, the left side in the way of right low left high Edge and back edge are connected to antetheca in turn（13）, left side wall（11）And rear wall（14）On；The right shell body（3）According to left low right height Mode be connected to antetheca in turn along, the right edge and back edge by its front（13）, right side wall（12）And rear wall（14）On.
- 5. the material buffer device of single crystal growing furnace according to claim 3, it is characterised in that：The adjacent right baffle-plate（2） With right shell body（3）The distance between be more than 50mm.
- 6. the material buffer device of single crystal growing furnace according to claim 4, it is characterised in that：Described right baffle-plate（2）For square Shape plate body, the left and right edge of its upper surface are set along corresponding horizontal line, right baffle-plate（2）The right along place horizontal plane with it is left Baffle plate（2）Upper surface where the acute angle of the angle of cut of plane be 40 ° to 50 ° of angle.
- 7. the material buffer device of single crystal growing furnace according to claim 4, it is characterised in that：Described right shell body（3）For square Shape plate body, the left and right edge of its upper surface are set along corresponding horizontal line, right shell body（3）Left margin where horizontal plane with it is right Baffle plate（3）Upper surface where the acute angle of the angle of cut of plane be 40 ° to 50 ° of angle.
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Cited By (1)
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| CN114717646A (en) * | 2022-03-31 | 2022-07-08 | 徐州鑫晶半导体科技有限公司 | Feeding pipe, feeding method and crystal growth equipment |
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Application publication date: 20180406 |