CN107863401A - 一种硫化锑基全无机薄膜太阳能电池的制备方法 - Google Patents
一种硫化锑基全无机薄膜太阳能电池的制备方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229940007424 antimony trisulfide Drugs 0.000 title claims abstract description 25
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 230000008021 deposition Effects 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 32
- 229910052959 stibnite Inorganic materials 0.000 claims abstract description 22
- 238000004073 vulcanization Methods 0.000 claims abstract description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 52
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 33
- 229910052786 argon Inorganic materials 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012300 argon atmosphere Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 239000005864 Sulphur Substances 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
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- 238000001704 evaporation Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- -1 Graphite Alkene Chemical class 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical class CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000002242 deionisation method Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
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- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 239000003921 oil Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000006365 thiocyanation reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Abstract
本发明公开了一种硫化锑基全无机薄膜太阳能电池的制备方法,首先采用溶胶‑凝胶法在FTO上制备一层致密的二氧化钛薄膜;二氧化钛薄膜经过退火后使用热蒸镀沉积硫化锑薄膜;然后使用硫代乙酰胺对硫化锑薄膜进行表面硫化同时进行退火处理;最后将化学气相沉积法生长的石墨烯薄膜转移到硫化锑薄膜上,形成TiO2/Sb2S3/Gr薄膜结构。器件在室温、100mW/cm2的模拟太阳光源照射下得到为560 mV的开路光电压、6.8 mA/cm2的短路光电流、1.17%的光电转换效率。本发明采用石墨烯作为硫化锑基太阳能电池的空穴传输层及透明导电电极具有价格低廉,制备简单且相较于硫化锑基太阳能电池大多使用的有机空穴传输具有更加稳定的器件性能。
Description
技术领域
本发明涉及一种硫化锑基新型全无机薄膜太阳能电池及其制备方法,属于无机非金属材料器件制造工艺领域。
技术背景
随着环境污染和能源短缺日益严重,人类正在寻求可再生能源来代替或补充常规一次性能源(如石油、煤炭等)。太阳能作为一种洁净可再生能源被认为是解决能源危机和环境污染最有效的途径之一。自太阳能电池问世以来,先后经历了第一代晶硅太阳能电池,第二代薄膜太阳能电池,第三代新概念太阳能电池和第四代复合薄膜太阳能电池。虽然太阳能电池研究技术得到了快速发展,但是硅基太阳能电池仍在目前光伏市场中占主体地位。然而,硅基太阳能电池制作工艺复杂,生产成本较高,同时硅基太阳电池的性能在长期光照条件下会有减,限制了其使用寿命和稳定性。因此,亟需制造一种新型、高效和低成本的新一代光伏电池。
硫化锑(Sb2S3)是一种性质稳定的Ⅴ-Ⅵ族直接带隙半导体材料,地壳中含量丰富、安全无毒。由于Sb2S3具有较高的光吸收系数(α >5×104 cm-1),并且带隙宽度适中、易于调控(1.5~2.2 eV),覆盖了大部分可见光光谱,因此被视为最有希望得到应用的太阳能电池材料之一。虽然硫化锑基太阳能电池近年来取得了一定的成果,但同时也存在大量的问题。如硫化锑薄膜的制备方法仍然比较匮乏,目前普遍以含硫与锑的化合物配置成溶液采用化学浴沉积法制备硫化锑薄膜,这种方法制备温度较低,使得硫化锑薄膜多为非晶态,在退火过程中容易发生团聚现象;现今研究主要集中于硫化锑敏化二氧化钛纳米结构太阳能电池,大多使用有机空穴传输材料层,使得电池稳定性较差。而无机空穴传输层只有硫氰化亚铜或极少数的p 型半导体,这限制了硫化锑在全无机薄膜电池的应用。所以探究其他廉价、无毒的无机空穴传输材料,以提高电池转化效率的新思想和新型结构是很有必要的。石墨烯因具有优异的导电性、超高的本征载流子迁移率、对可见光及红外光高的透明性常作为透明导电电极、空穴与电子受体材料应用于太阳能电池。故可将石墨烯作为空穴传输层与硫化锑薄膜组成全无机新型薄膜太阳能电池。
发明内容
本发明的目的是以硫化锑作为吸光材料,吸收光能产生电子-空穴,电子经n-TiO2传输到外电路,而空穴经石墨烯薄膜传输到外电路。其中石墨烯薄膜作为空穴传输层及透明导电电极。本发明所提供的新型全无机薄膜太阳能电池具有价格低廉,制备简单且稳定性好。
一种硫化锑基新型全无机薄膜太阳能电池及其制备方法,其特征在于具有以下的工艺过程和步骤:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃(FTO)(~7 Ω·sq)作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15 分钟,洗去表面的杂质与有机物,随后用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:首先配置0.5mol/L 的四异丙醇钛乙醇溶液2.5mL,其中四异丙醇钛的纯度为99.8%;同时配置2.5mL 0.04mol/L 的盐酸乙醇溶液;然后将两种溶液混合均匀后,旋涂到洗净的FTO 上,旋涂前用高温胶带粘住FTO 边缘0.2cm 作为电池背电极;最后将带有二氧化钛前驱体的FTO 放入管式电阻炉中,在500oC 下空气中退火60min;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在10~30 nm/s,硫化锑薄膜沉积的厚度为200~500nm(通过振晶片控制);在沉积的硫化锑薄膜表面旋涂0.001g/mL~0.1g/mL的硫代乙酰胺(TA)DMF溶液,然后在氩气氛围中退火30~60min,退火温度为200-400 ℃;
(4)石墨烯的生长:使用化学气相沉积法(CVD)生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到1000 ℃,在1000 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气(300 mL/min)、氢气(30~50 mL/min)、甲烷(10~20 mL/min)的混合气体,反应10~30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。
同现有技术相比,本发明具有如下显著优点:
(1)石墨烯的功函数与硫化锑的能带结构能有较好的匹配,可获得较大开路光电压。
(2)制备的全无机薄膜TiO2/Sb2S3/Gr太阳能电池稳定性好,具有创新性与独创性。
附图说明
图1:本发明的一种全无机薄膜TiO2/Sb2S3/Gr太阳能电池的结构示意图。
图2:实施例1 的TiO2/Sb2S3/Gr太阳能电池在未使用硫代乙酰胺处理的室温J-V特性(有光与无光照情况)。
图3:实施例2 的TiO2/Sb2S3/Gr太阳能电池在使用0.001g/mL硫代乙酰胺处理的室温J-V 特性(有光与无光照情况)。
图4:实施例3 的TiO2/Sb2S3/Gr太阳能电池在使用0.01g/mL硫代乙酰胺处理的室温J-V 特性(有光与无光照情况)。
图5:实施例4 的TiO2/Sb2S3/Gr太阳能电池在使用0.05g/mL硫代乙酰胺处理的室温J-V 特性(有光与无光照情况)。
具体实施方式
下面结合附图对本发明作进一步说明。
实施例1
本实施例的制备过程和步骤如下:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃(FTO)(~7 Ω·sq)作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15 分钟,洗去表面的杂质与有机物,随后用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:首先配置0.5mol/L 的四异丙醇钛乙醇溶液2.5mL,其中四异丙醇钛的纯度为99.8%;同时配置2.5mL 0.04mol/L 的盐酸乙醇溶液;然后将两种溶液混合均匀后,旋涂到洗净的FTO 上,旋涂前用高温胶带粘住FTO 边缘0.2cm 作为电池背电极;最后将带有二氧化钛前驱体的FTO 放入管式电阻炉中,在500oC 下空气中退火60min;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在20nm/s,硫化锑薄膜沉积的厚度为300 nm(通过振晶片控制);然后在氩气氛围中退火45 min,退火温度为325 ℃;
(4)石墨烯的生长:使用化学气相沉积法(CVD)生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到1000 ℃,在1000 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气(300 mL/min)、氢气(30 mL/min)、甲烷(20 mL/min)的混合气体,反应30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。在室温、AM1.5 太阳光模拟器模拟光强为100mW/cm2太阳光下进行光伏测试,测试结构如图2。
实施例2
本实施例的制备过程和步骤如下:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃(FTO)(~7 Ω·sq)作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15 分钟,洗去表面的杂质与有机物,随后用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:首先配置0.5mol/L 的四异丙醇钛乙醇溶液2.5mL,其中四异丙醇钛的纯度为99.8%;同时配置2.5mL 0.04mol/L 的盐酸乙醇溶液;然后将两种溶液混合均匀后,旋涂到洗净的FTO 上,旋涂前用高温胶带粘住FTO 边缘0.2cm 作为电池背电极;最后将带有二氧化钛前驱体的FTO 放入管式电阻炉中,在500oC 下空气中退火60min;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在20nm/s,硫化锑薄膜沉积的厚度为300 nm(通过振晶片控制);在沉积的硫化锑薄膜表面旋涂0.001g/mL的硫代乙酰胺(TA)DMF溶液,然后在氩气氛围中退火45 min,退火温度为325 ℃;
(4)石墨烯的生长:使用化学气相沉积法(CVD)生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到1000 ℃,在1000 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气(300 mL/min)、氢气(30 mL/min)、甲烷(20 mL/min)的混合气体,反应30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。在室温、AM1.5 太阳光模拟器模拟光强为100mW/cm2太阳光下进行光伏测试,测试结构如图3。
实施例3
本实施例的制备过程和步骤如下:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃(FTO)(~7 Ω·sq)作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15 分钟,洗去表面的杂质与有机物,随后用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:首先配置0.5mol/L 的四异丙醇钛乙醇溶液2.5mL,其中四异丙醇钛的纯度为99.8%;同时配置2.5mL 0.04mol/L 的盐酸乙醇溶液;然后将两种溶液混合均匀后,旋涂到洗净的FTO 上,旋涂前用高温胶带粘住FTO 边缘0.2cm 作为电池背电极;最后将带有二氧化钛前驱体的FTO 放入管式电阻炉中,在500oC 下空气中退火60min;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在20nm/s,硫化锑薄膜沉积的厚度为300 nm(通过振晶片控制);在沉积的硫化锑薄膜表面旋涂0.01g/mL的硫代乙酰胺(TA)DMF溶液,然后在氩气氛围中退火45 min,退火温度为325 ℃;
(4)石墨烯的生长:使用化学气相沉积法(CVD)生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到1000 ℃,在1000 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气(300 mL/min)、氢气(30 mL/min)、甲烷(20 mL/min)的混合气体,反应30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。在室温、AM1.5 太阳光模拟器模拟光强为100mW/cm2太阳光下进行光伏测试,测试结构如图4。
实施例4
本实施例的制备过程和步骤如下:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃(FTO)(~7 Ω·sq)作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15 分钟,洗去表面的杂质与有机物,随后用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:首先配置0.5mol/L 的四异丙醇钛乙醇溶液2.5mL,其中四异丙醇钛的纯度为99.8%;同时配置2.5mL 0.04mol/L 的盐酸乙醇溶液;然后将两种溶液混合均匀后,旋涂到洗净的FTO 上,旋涂前用高温胶带粘住FTO 边缘0.2cm 作为电池背电极;最后将带有二氧化钛前驱体的FTO 放入管式电阻炉中,在500oC 下空气中退火60min;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在20nm/s,硫化锑薄膜沉积的厚度为300 nm(通过振晶片控制);在沉积的硫化锑薄膜表面旋涂0.05g/mL的硫代乙酰胺(TA)DMF溶液,然后在氩气氛围中退火45 min,退火温度为325 ℃;
(4)石墨烯的生长:使用化学气相沉积法(CVD)生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到1000 ℃,在1000 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气(300 mL/min)、氢气(30 mL/min)、甲烷(20 mL/min)的混合气体,反应30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。在室温、AM1.5 太阳光模拟器模拟光强为100mW/cm2太阳光下进行光伏测试,测试结构如图5。
Claims (4)
1.一种硫化锑基全无机薄膜太阳能电池的制备方法,其特征在于,具有以下的工艺过程和步骤:
(1)衬底预处理:掺杂氟的SnO2透明导电玻璃作为衬底,用去离子水、乙醇和丙酮分别超声清洗5-15分钟,用去离子水冲洗干净并氩气吹干后备用;
(2)TiO2薄膜的制备:将四异丙醇钛乙醇溶液与盐酸乙醇溶液混合后旋涂到洗净的FTO上,再放入管式电阻炉中,在500oC下空气中退火60min,得到FTO/TiO2薄膜;
(3)Sb2S3薄膜的制备:采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积的硫化锑薄膜表面旋涂硫代乙酰胺的DMF溶液,然后在氩气氛围中200-400 ℃下退火30~60 min得到Sb2S3薄膜;
(4)石墨烯的生长:使用化学气相沉积法生长石墨烯薄膜,将铜箔在氩气气氛中从室温加热到900-1200 ℃,在900-1200 ℃条件下通入氢气,退火30~40 min分钟后,再通入氩气、氢气、甲烷的混合气体,反应10~30 min,再在氩气保护下,降温至室温,将生长了石墨烯的铜箔用硝酸铁溶液刻蚀后用去离子水清洗,得到石墨烯备用;
(5)太阳能电池的组装:将(4)中生长的石墨烯薄膜转移到(3)中制备的硫化锑薄膜上,然后用银胶、银线做为电极,得到TiO2/Sb2S3/Gr电池结构。
2.权利要求1所述的硫化锑基全无机薄膜太阳能电池的制备方法,其特征在于,所述的步骤(3)中,采用热蒸镀法在FTO/TiO2沉积硫化锑薄膜,在沉积前将装置真空室的压强抽至5x10-4 Pa以下;通过调节加热电流来控制样品沉积速度,沉积速度控制在10~30 nm/s,硫化锑薄膜沉积的厚度为200~500nm。
3.权利要求1所述的硫化锑基全无机薄膜太阳能电池的制备方法,其特征在于,硫代乙酰胺DMF溶液的浓度为0.001g/mL~0.1g/mL。
4.权利要求1所述的硫化锑基全无机薄膜太阳能电池的制备方法,其特征在于,步骤(4)中,通入氩气、氢气、甲烷的混合气体中,氩气的通入速度为300 mL/min、氢气的通入速度为30~50 mL/min、甲烷的通入速度为10~20 mL/min。
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