CN107840303B - 用于mems开关器件的保护方案 - Google Patents
用于mems开关器件的保护方案 Download PDFInfo
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- CN107840303B CN107840303B CN201710843643.6A CN201710843643A CN107840303B CN 107840303 B CN107840303 B CN 107840303B CN 201710843643 A CN201710843643 A CN 201710843643A CN 107840303 B CN107840303 B CN 107840303B
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- solid state
- integrated
- circuit
- switching device
- mems
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Images
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- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- B81B7/008—MEMS characterised by an electronic circuit specially adapted for controlling or driving the same
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- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
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- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/49541—Geometry of the lead-frame
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/161—Cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Micromachines (AREA)
- Geometry (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/269,086 US10529518B2 (en) | 2016-09-19 | 2016-09-19 | Protection schemes for MEMS switch devices |
US15/269,086 | 2016-09-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107840303A CN107840303A (zh) | 2018-03-27 |
CN107840303B true CN107840303B (zh) | 2020-07-14 |
Family
ID=61302501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710843643.6A Active CN107840303B (zh) | 2016-09-19 | 2017-09-19 | 用于mems开关器件的保护方案 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10529518B2 (zh) |
CN (1) | CN107840303B (zh) |
DE (1) | DE102017121611B4 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10199424B1 (en) * | 2017-07-19 | 2019-02-05 | Meridian Innovation Pte Ltd | Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines |
US10418294B1 (en) * | 2018-05-15 | 2019-09-17 | Texas Instruments Incorporated | Semiconductor device package with a cap to selectively exclude contact with mold compound |
DE102018214475A1 (de) * | 2018-08-27 | 2020-02-27 | Robert Bosch Gmbh | ESD-Schutzvorrichtung für ein MEMS-Element |
US11469717B2 (en) | 2019-05-03 | 2022-10-11 | Analog Devices International Unlimited Company | Microwave amplifiers tolerant to electrical overstress |
CN112919403A (zh) * | 2019-12-06 | 2021-06-08 | 研能科技股份有限公司 | 微流体致动器装置 |
US11501928B2 (en) | 2020-03-27 | 2022-11-15 | Menlo Microsystems, Inc. | MEMS device built on substrate with ruthenium based contact surface material |
US20220311326A1 (en) * | 2021-03-24 | 2022-09-29 | Psemi Corporation | Power converters and methods for protecting power converters |
US11646576B2 (en) | 2021-09-08 | 2023-05-09 | Analog Devices International Unlimited Company | Electrical overstress protection of microelectromechanical systems |
DE102021212369A1 (de) | 2021-11-03 | 2023-05-04 | Robert Bosch Gesellschaft mit beschränkter Haftung | Relais und Verfahren zum Betreiben eines Relais |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1755502A (zh) * | 2004-09-27 | 2006-04-05 | Idc公司 | 用于防止干涉式调制器静电放电的方法及装置 |
CN101026053A (zh) * | 2006-02-20 | 2007-08-29 | 三星电子株式会社 | 向下类型mems开关及其制造方法 |
CN104520996A (zh) * | 2012-04-30 | 2015-04-15 | 维斯普瑞公司 | 可编程部件的混合技术组合件 |
CN105679607A (zh) * | 2009-01-05 | 2016-06-15 | 意法半导体亚太私人有限公司 | 微电子机械系统 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
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US7183633B2 (en) * | 2001-03-01 | 2007-02-27 | Analog Devices Inc. | Optical cross-connect system |
US6531331B1 (en) | 2002-07-16 | 2003-03-11 | Sandia Corporation | Monolithic integration of a MOSFET with a MEMS device |
US6930569B2 (en) * | 2003-07-31 | 2005-08-16 | Discera | Micromechanical resonator having short support beams |
US7247246B2 (en) | 2003-10-20 | 2007-07-24 | Atmel Corporation | Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity |
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US10529518B2 (en) | 2020-01-07 |
DE102017121611B4 (de) | 2021-03-25 |
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CN107840303A (zh) | 2018-03-27 |
US20180083439A1 (en) | 2018-03-22 |
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