CN107834138A - A kind of composite ceramic-based microstrip isolator - Google Patents
A kind of composite ceramic-based microstrip isolator Download PDFInfo
- Publication number
- CN107834138A CN107834138A CN201711012045.0A CN201711012045A CN107834138A CN 107834138 A CN107834138 A CN 107834138A CN 201711012045 A CN201711012045 A CN 201711012045A CN 107834138 A CN107834138 A CN 107834138A
- Authority
- CN
- China
- Prior art keywords
- substrate
- ceramic substrate
- ferrite
- dielectric
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 239000002131 composite material Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910017083 AlN Inorganic materials 0.000 claims description 10
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
Landscapes
- Non-Reversible Transmitting Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a kind of high power capacity, wide working band, reliability is high, composite ceramic-based microstrip isolator simple in construction, including substrate, the microstrip circuit and load resistance being arranged on substrate, substrate includes dielectric ceramic substrate, dielectric ceramic substrate is provided with containing groove, ferrite substrate is provided with containing groove, ferrite substrate flushes with dielectric ceramic substrate surface, microstrip circuit includes the central metal knot being arranged on ferrite substrate, dielectric ceramic substrate is provided with three signal transmssion lines, signal transmssion line is connected by metallized dielectric bridge with central metal knot, wherein a signal transmssion line is connected with load resistance.
Description
Technical field
The present invention relates to a kind of composite ceramic-based microstrip isolator.
Background technology
With the development of modern science and technology, microwave integrated circuit is toward integrated level height, small volume, light weight, working band
The directions such as width are developed, and this is to key element therein --- and microstrip isolator proposes higher requirement.
The microstrip isolator of existing main flow mainly by making microstrip circuit and load in full-scale ferrite surfaces, due to
The characteristic limitation of Ferrite Material in itself, the microstrip isolator working frequency range made is narrower and power capacity is smaller,
Through the development need that can not meet future microwave integrated circuit.
The content of the invention
The technical problems to be solved by the invention are:A kind of high power capacity, wide working band, reliability height, knot are provided
The simply composite ceramic-based microstrip isolator of structure.
In order to solve the above technical problems, the technical solution adopted in the present invention is:Composite ceramic-based microstrip isolator, including
Substrate, the microstrip circuit and load resistance being arranged on substrate, substrate include dielectric ceramic substrate, and dielectric ceramic substrate is provided with
Containing groove, containing groove are provided with ferrite substrate, and ferrite substrate flushes with dielectric ceramic substrate surface, and microstrip circuit includes
The central metal knot being arranged on ferrite substrate, dielectric ceramic substrate are provided with three signal transmssion lines, and signal transmssion line leads to
Cross metallized dielectric bridge with central metal knot to be connected, wherein a signal transmssion line is connected with load resistance.
As a kind of preferable scheme, the ferrite substrate is sintered in dielectric ceramic substrate upper groove.
As a kind of preferable scheme, the ceramic substrate be aluminium nitride ceramic substrate or alumina ceramic substrate or
High Resistivity Si ceramic substrate.
As a kind of preferable scheme, the metallized dielectric bridge is metallized polyimide or metallization aluminium nitride or gold
Categoryization silica dioxide medium bridge.
As a kind of preferable scheme, the load resistance is semicircle or rectangle or fan-shaped membrane resistance.
As a kind of preferable scheme, the microstrip circuit passes through vacuum coating or plating or photoetching or etch process
It is made in substrate front.
The beneficial effects of the invention are as follows:The composite ceramics substrate uses the middle embedded outer shroud of ferrite circular substrate sintering
In aluminium nitride media ceramic, and microstrip circuit circular flat metal center knot is mainly made on middle ferrite circular substrate,
Signal transmssion line is mainly made in the mode on outer shroud aluminium nitride dielectric ceramic substrate, and this is designed to effectively increase overall device
Part working frequency range bandwidth;
The circular flat metal center knot and three signal transmssion lines are respectively by three metallized polyimide medium bridges
Connection conducting, relative to the connected mode of traditional gold wire bonding, greatly improves reliability, simplifies postorder encapsulation operation;
The load resistance is made on the aluminium nitride base material with high thermal conductivity coefficient, relative to traditional full-scale ferrite structure device
Part, the power capacity of integral device have obtained great lifting.Device integrally has high power capacity, wide working band, reliable
The features such as property is high, simple in construction.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
In Fig. 1:1. dielectric ceramic substrate, 2. ferrite substrates, 3. signal transmssion lines, 4. central metal knots, 5. metallization
Medium bridge, 6. load resistances.
Embodiment
Below in conjunction with the accompanying drawings, specific embodiments of the present invention are described in detail.
As shown in figure 1, composite ceramic-based microstrip isolator, including substrate, the microstrip circuit that is arranged on substrate and load
Resistance 6.The load resistance 6 is semicircle film resistor.
Substrate includes aluminium nitride dielectric ceramic substrate 1, and aluminium nitride dielectric ceramic substrate 1 is provided with containing groove, houses recessed
Ferrite substrate 2 is provided with groove, ferrite substrate 2 flushes with the surface of aluminium nitride dielectric ceramic substrate 1, and microstrip circuit includes setting
Central metal knot 4 on ferrite substrate 2, aluminium nitride dielectric ceramic substrate 1 are provided with three signal transmssion lines 3, and signal passes
Defeated line 3 is connected by metallized polyimide medium bridge 5 with central metal knot 4.A wherein signal transmssion line 3 and load electricity
Resistance 6 is connected.
The microstrip circuit is made in substrate front by vacuum coating or plating or photoetching or etch process.
The principle and its effect of the above embodiments only illustrative the invention, and the implementation that part uses
Example, not for the limitation present invention;It should be pointed out that for the person of ordinary skill of the art, wound of the present invention is not being departed from
On the premise of making design, various modifications and improvements can be made, these belong to protection scope of the present invention.
Claims (6)
1. composite ceramic-based microstrip isolator, including substrate, the microstrip circuit and load resistance that are arranged on substrate, its feature exist
In:The substrate includes dielectric ceramic substrate, and dielectric ceramic substrate is provided with containing groove, ferrite base is provided with containing groove
Piece, ferrite substrate flush with dielectric ceramic substrate surface, and microstrip circuit includes the central metal being arranged on ferrite substrate
Knot, dielectric ceramic substrate are provided with three signal transmssion lines, and signal transmssion line passes through metallized dielectric bridge and central metal knot phase
Connection a, wherein signal transmssion line is connected with load resistance.
2. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The ferrite substrate is sintered in Jie
In matter ceramic substrate upper groove.
3. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The dielectric ceramic substrate is nitridation
Aluminium ceramic substrate or alumina ceramic substrate or High Resistivity Si ceramic substrate.
4. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The metallized dielectric bridge is metal
Change polyimides or metallization aluminium nitride or metallization silica dioxide medium bridge.
5. the composite ceramic-based microstrip isolator as any one of claim 1-4, it is characterised in that:The load resistance
For semicircle or rectangle or fan-shaped membrane resistance.
6. the composite ceramic-based microstrip isolator as any one of claim 1-4, it is characterised in that:The microstrip circuit
Substrate front is made in by vacuum coating or plating or photoetching or etch process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711012045.0A CN107834138A (en) | 2017-10-26 | 2017-10-26 | A kind of composite ceramic-based microstrip isolator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711012045.0A CN107834138A (en) | 2017-10-26 | 2017-10-26 | A kind of composite ceramic-based microstrip isolator |
Publications (1)
Publication Number | Publication Date |
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CN107834138A true CN107834138A (en) | 2018-03-23 |
Family
ID=61649282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711012045.0A Pending CN107834138A (en) | 2017-10-26 | 2017-10-26 | A kind of composite ceramic-based microstrip isolator |
Country Status (1)
Country | Link |
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CN (1) | CN107834138A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397860A (en) * | 2020-10-30 | 2021-02-23 | 西南电子技术研究所(中国电子科技集团公司第十研究所) | Ultra-wideband millimeter wave high-power planar thin-film load |
Citations (6)
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---|---|---|---|---|
CN101552366A (en) * | 2009-05-15 | 2009-10-07 | 张家港保税区灿勤科技有限公司 | Wideband microstrip isolator |
CN101667673A (en) * | 2009-09-23 | 2010-03-10 | 电子科技大学 | Membrane integrated microtrip ferrite circulator |
CN101800191A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Method for preparing medium bridge by using polyimide |
CN203242730U (en) * | 2013-05-28 | 2013-10-16 | 南京广顺电子技术研究所 | Micro-strip substrate type isolator |
CN205376711U (en) * | 2015-12-30 | 2016-07-06 | 南京广顺电子技术研究所 | 8 -18GHz's broadband microstrip substrate formula isolator |
CN207282682U (en) * | 2017-10-26 | 2018-04-27 | 苏州华博电子科技有限责任公司 | A kind of composite ceramic-based microstrip isolator |
-
2017
- 2017-10-26 CN CN201711012045.0A patent/CN107834138A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101800191A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Method for preparing medium bridge by using polyimide |
CN101552366A (en) * | 2009-05-15 | 2009-10-07 | 张家港保税区灿勤科技有限公司 | Wideband microstrip isolator |
CN101667673A (en) * | 2009-09-23 | 2010-03-10 | 电子科技大学 | Membrane integrated microtrip ferrite circulator |
CN203242730U (en) * | 2013-05-28 | 2013-10-16 | 南京广顺电子技术研究所 | Micro-strip substrate type isolator |
CN205376711U (en) * | 2015-12-30 | 2016-07-06 | 南京广顺电子技术研究所 | 8 -18GHz's broadband microstrip substrate formula isolator |
CN207282682U (en) * | 2017-10-26 | 2018-04-27 | 苏州华博电子科技有限责任公司 | A kind of composite ceramic-based microstrip isolator |
Non-Patent Citations (1)
Title |
---|
张济楫, 人民邮电出版社 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397860A (en) * | 2020-10-30 | 2021-02-23 | 西南电子技术研究所(中国电子科技集团公司第十研究所) | Ultra-wideband millimeter wave high-power planar thin-film load |
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Application publication date: 20180323 |
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