CN107834138A - A kind of composite ceramic-based microstrip isolator - Google Patents

A kind of composite ceramic-based microstrip isolator Download PDF

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Publication number
CN107834138A
CN107834138A CN201711012045.0A CN201711012045A CN107834138A CN 107834138 A CN107834138 A CN 107834138A CN 201711012045 A CN201711012045 A CN 201711012045A CN 107834138 A CN107834138 A CN 107834138A
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CN
China
Prior art keywords
substrate
ceramic substrate
ferrite
dielectric
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711012045.0A
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Chinese (zh)
Inventor
朱小明
陈洋
薛新忠
高永全
王列松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU HUABO ELECTRONIC TECHNOLOGY Co Ltd
Original Assignee
SUZHOU HUABO ELECTRONIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU HUABO ELECTRONIC TECHNOLOGY Co Ltd filed Critical SUZHOU HUABO ELECTRONIC TECHNOLOGY Co Ltd
Priority to CN201711012045.0A priority Critical patent/CN107834138A/en
Publication of CN107834138A publication Critical patent/CN107834138A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/32Non-reciprocal transmission devices
    • H01P1/36Isolators

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  • Non-Reversible Transmitting Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a kind of high power capacity, wide working band, reliability is high, composite ceramic-based microstrip isolator simple in construction, including substrate, the microstrip circuit and load resistance being arranged on substrate, substrate includes dielectric ceramic substrate, dielectric ceramic substrate is provided with containing groove, ferrite substrate is provided with containing groove, ferrite substrate flushes with dielectric ceramic substrate surface, microstrip circuit includes the central metal knot being arranged on ferrite substrate, dielectric ceramic substrate is provided with three signal transmssion lines, signal transmssion line is connected by metallized dielectric bridge with central metal knot, wherein a signal transmssion line is connected with load resistance.

Description

A kind of composite ceramic-based microstrip isolator
Technical field
The present invention relates to a kind of composite ceramic-based microstrip isolator.
Background technology
With the development of modern science and technology, microwave integrated circuit is toward integrated level height, small volume, light weight, working band The directions such as width are developed, and this is to key element therein --- and microstrip isolator proposes higher requirement.
The microstrip isolator of existing main flow mainly by making microstrip circuit and load in full-scale ferrite surfaces, due to The characteristic limitation of Ferrite Material in itself, the microstrip isolator working frequency range made is narrower and power capacity is smaller, Through the development need that can not meet future microwave integrated circuit.
The content of the invention
The technical problems to be solved by the invention are:A kind of high power capacity, wide working band, reliability height, knot are provided The simply composite ceramic-based microstrip isolator of structure.
In order to solve the above technical problems, the technical solution adopted in the present invention is:Composite ceramic-based microstrip isolator, including Substrate, the microstrip circuit and load resistance being arranged on substrate, substrate include dielectric ceramic substrate, and dielectric ceramic substrate is provided with Containing groove, containing groove are provided with ferrite substrate, and ferrite substrate flushes with dielectric ceramic substrate surface, and microstrip circuit includes The central metal knot being arranged on ferrite substrate, dielectric ceramic substrate are provided with three signal transmssion lines, and signal transmssion line leads to Cross metallized dielectric bridge with central metal knot to be connected, wherein a signal transmssion line is connected with load resistance.
As a kind of preferable scheme, the ferrite substrate is sintered in dielectric ceramic substrate upper groove.
As a kind of preferable scheme, the ceramic substrate be aluminium nitride ceramic substrate or alumina ceramic substrate or High Resistivity Si ceramic substrate.
As a kind of preferable scheme, the metallized dielectric bridge is metallized polyimide or metallization aluminium nitride or gold Categoryization silica dioxide medium bridge.
As a kind of preferable scheme, the load resistance is semicircle or rectangle or fan-shaped membrane resistance.
As a kind of preferable scheme, the microstrip circuit passes through vacuum coating or plating or photoetching or etch process It is made in substrate front.
The beneficial effects of the invention are as follows:The composite ceramics substrate uses the middle embedded outer shroud of ferrite circular substrate sintering In aluminium nitride media ceramic, and microstrip circuit circular flat metal center knot is mainly made on middle ferrite circular substrate, Signal transmssion line is mainly made in the mode on outer shroud aluminium nitride dielectric ceramic substrate, and this is designed to effectively increase overall device Part working frequency range bandwidth;
The circular flat metal center knot and three signal transmssion lines are respectively by three metallized polyimide medium bridges Connection conducting, relative to the connected mode of traditional gold wire bonding, greatly improves reliability, simplifies postorder encapsulation operation; The load resistance is made on the aluminium nitride base material with high thermal conductivity coefficient, relative to traditional full-scale ferrite structure device Part, the power capacity of integral device have obtained great lifting.Device integrally has high power capacity, wide working band, reliable The features such as property is high, simple in construction.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
In Fig. 1:1. dielectric ceramic substrate, 2. ferrite substrates, 3. signal transmssion lines, 4. central metal knots, 5. metallization Medium bridge, 6. load resistances.
Embodiment
Below in conjunction with the accompanying drawings, specific embodiments of the present invention are described in detail.
As shown in figure 1, composite ceramic-based microstrip isolator, including substrate, the microstrip circuit that is arranged on substrate and load Resistance 6.The load resistance 6 is semicircle film resistor.
Substrate includes aluminium nitride dielectric ceramic substrate 1, and aluminium nitride dielectric ceramic substrate 1 is provided with containing groove, houses recessed Ferrite substrate 2 is provided with groove, ferrite substrate 2 flushes with the surface of aluminium nitride dielectric ceramic substrate 1, and microstrip circuit includes setting Central metal knot 4 on ferrite substrate 2, aluminium nitride dielectric ceramic substrate 1 are provided with three signal transmssion lines 3, and signal passes Defeated line 3 is connected by metallized polyimide medium bridge 5 with central metal knot 4.A wherein signal transmssion line 3 and load electricity Resistance 6 is connected.
The microstrip circuit is made in substrate front by vacuum coating or plating or photoetching or etch process.
The principle and its effect of the above embodiments only illustrative the invention, and the implementation that part uses Example, not for the limitation present invention;It should be pointed out that for the person of ordinary skill of the art, wound of the present invention is not being departed from On the premise of making design, various modifications and improvements can be made, these belong to protection scope of the present invention.

Claims (6)

1. composite ceramic-based microstrip isolator, including substrate, the microstrip circuit and load resistance that are arranged on substrate, its feature exist In:The substrate includes dielectric ceramic substrate, and dielectric ceramic substrate is provided with containing groove, ferrite base is provided with containing groove Piece, ferrite substrate flush with dielectric ceramic substrate surface, and microstrip circuit includes the central metal being arranged on ferrite substrate Knot, dielectric ceramic substrate are provided with three signal transmssion lines, and signal transmssion line passes through metallized dielectric bridge and central metal knot phase Connection a, wherein signal transmssion line is connected with load resistance.
2. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The ferrite substrate is sintered in Jie In matter ceramic substrate upper groove.
3. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The dielectric ceramic substrate is nitridation Aluminium ceramic substrate or alumina ceramic substrate or High Resistivity Si ceramic substrate.
4. composite ceramic-based microstrip isolator as claimed in claim 1, it is characterised in that:The metallized dielectric bridge is metal Change polyimides or metallization aluminium nitride or metallization silica dioxide medium bridge.
5. the composite ceramic-based microstrip isolator as any one of claim 1-4, it is characterised in that:The load resistance For semicircle or rectangle or fan-shaped membrane resistance.
6. the composite ceramic-based microstrip isolator as any one of claim 1-4, it is characterised in that:The microstrip circuit Substrate front is made in by vacuum coating or plating or photoetching or etch process.
CN201711012045.0A 2017-10-26 2017-10-26 A kind of composite ceramic-based microstrip isolator Pending CN107834138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711012045.0A CN107834138A (en) 2017-10-26 2017-10-26 A kind of composite ceramic-based microstrip isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711012045.0A CN107834138A (en) 2017-10-26 2017-10-26 A kind of composite ceramic-based microstrip isolator

Publications (1)

Publication Number Publication Date
CN107834138A true CN107834138A (en) 2018-03-23

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CN201711012045.0A Pending CN107834138A (en) 2017-10-26 2017-10-26 A kind of composite ceramic-based microstrip isolator

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CN (1) CN107834138A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397860A (en) * 2020-10-30 2021-02-23 西南电子技术研究所(中国电子科技集团公司第十研究所) Ultra-wideband millimeter wave high-power planar thin-film load

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101552366A (en) * 2009-05-15 2009-10-07 张家港保税区灿勤科技有限公司 Wideband microstrip isolator
CN101667673A (en) * 2009-09-23 2010-03-10 电子科技大学 Membrane integrated microtrip ferrite circulator
CN101800191A (en) * 2009-02-11 2010-08-11 中国科学院微电子研究所 Method for preparing medium bridge by using polyimide
CN203242730U (en) * 2013-05-28 2013-10-16 南京广顺电子技术研究所 Micro-strip substrate type isolator
CN205376711U (en) * 2015-12-30 2016-07-06 南京广顺电子技术研究所 8 -18GHz's broadband microstrip substrate formula isolator
CN207282682U (en) * 2017-10-26 2018-04-27 苏州华博电子科技有限责任公司 A kind of composite ceramic-based microstrip isolator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800191A (en) * 2009-02-11 2010-08-11 中国科学院微电子研究所 Method for preparing medium bridge by using polyimide
CN101552366A (en) * 2009-05-15 2009-10-07 张家港保税区灿勤科技有限公司 Wideband microstrip isolator
CN101667673A (en) * 2009-09-23 2010-03-10 电子科技大学 Membrane integrated microtrip ferrite circulator
CN203242730U (en) * 2013-05-28 2013-10-16 南京广顺电子技术研究所 Micro-strip substrate type isolator
CN205376711U (en) * 2015-12-30 2016-07-06 南京广顺电子技术研究所 8 -18GHz's broadband microstrip substrate formula isolator
CN207282682U (en) * 2017-10-26 2018-04-27 苏州华博电子科技有限责任公司 A kind of composite ceramic-based microstrip isolator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张济楫, 人民邮电出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397860A (en) * 2020-10-30 2021-02-23 西南电子技术研究所(中国电子科技集团公司第十研究所) Ultra-wideband millimeter wave high-power planar thin-film load

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Application publication date: 20180323

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