CN107833904A - Double-sided OLED display panel and its manufacture method - Google Patents
Double-sided OLED display panel and its manufacture method Download PDFInfo
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- CN107833904A CN107833904A CN201711038812.5A CN201711038812A CN107833904A CN 107833904 A CN107833904 A CN 107833904A CN 201711038812 A CN201711038812 A CN 201711038812A CN 107833904 A CN107833904 A CN 107833904A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 75
- 239000012212 insulator Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 8
- 230000004308 accommodation Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- -1 Silicon oxide compound Chemical class 0.000 description 2
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention discloses a kind of double-sided OLED display panel and its manufacture method.The double-sided OLED display panel includes：Substrate；Thin film transistor (TFT), the first OLED and conducting element positioned at substrate side, the drain pattern of thin film transistor (TFT) is connected with the anode pattern of the first OLED, one end of conducting element is connected with the anode pattern of the first OLED, and the other end of conducting element is exposed by the opposite side of substrate；Positioned at the second OLED of substrate opposite side, the anode pattern of the second OLED and the other end of conducting element connect.Based on this, the present invention can be advantageous to the lightening design of double-sided OLED display panel.
Description
Technical field
The present invention relates to display technology field, and in particular to a kind of double-sided OLED (Organic Light-Emitting
Diode, Organic Light Emitting Diode) display panel and its manufacture method.
Background technology
Currently in order to meet the needs of both sides confirm screen display face-to-face, double face display panel turns into bank, supermarket
Deng the main flow display panel of transaction place.And OLED as a new generation display, it is different from traditional liquid crystal display it
It is in it without using backlight, by making organic luminous layer on underlay substrate, organic luminous layer is wrapped in negative electrode
Between anode, apply voltage to two electrodes, then organic luminous layer will light, and have lightening feature.Thus, should by OLED
Turn into industry main flow for double-sided OLED display panel obtained from double face display panel.In existing double-sided OLED display panel
Structure design in, two OLEDs back to setting are respectively by two completely self-contained thin film transistor (TFT) (Thin Film
Transistor, TFT) drive, thickness shared by the two thin film transistor (TFT)s is larger, it is clear that is unfavorable for lightening design.
The content of the invention
In consideration of it, the present invention provides a kind of double-sided OLED display panel and its manufacture method, double-sided OLED can be advantageous to
The lightening design of display panel.
The double-sided OLED display panel of one embodiment of the invention, including：
Substrate；
Positioned at the thin film transistor (TFT) of the substrate side, the first OLED and conducting element, the film crystal
The drain pattern of pipe is connected with the anode pattern of first OLED, one end of the conducting element and the first OLED
The anode pattern connection of device, the other end of the conducting element are exposed by the opposite side of the substrate；
Positioned at the second OLED of the substrate opposite side, the anode pattern of second OLED with it is described
The other end connection of conducting element.
The manufacture method of the double-sided OLED display panel of one embodiment of the invention, including：
Thin film transistor (TFT), the first OLED and conducting element, the thin film transistor (TFT) are formed in the side of substrate
Drain pattern be connected with the anode pattern of first OLED, one end of the conducting element and the first OLED devices
The anode pattern connection of part, the other end of the conducting element are exposed by the opposite side of the substrate；
The second OLED, the anode pattern of second OLED and institute are formed in the opposite side of the substrate
State the other end connection of conducting element.
Beneficial effect：The present invention designs conducting element between two OLEDs of double-sided OLED display panel, and this is led
Anode pattern of the both ends of electric device respectively with two OLEDs is connected, and need to only be set a thin film transistor (TFT) and make it that this is thin
The drain pattern of film transistor is connected with the anode pattern of one of OLED, you can will show signal by conducting element
The anode pattern of another OLED is passed to, is compared to the design of two thin film transistor (TFT)s, the present invention can be advantageous to
The lightening design of double-sided OLED display panel.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the double-sided OLED display panel of one embodiment of the invention；
Fig. 2 is the schematic flow sheet of the manufacture method of the double-sided OLED display panel of one embodiment of the invention；
Fig. 3 is the schematic flow sheet of the manufacture method of the double-sided OLED display panel of another embodiment of the present invention；
Fig. 4 is the schematic diagram based on the manufacture double-sided OLED display panel of method shown in Fig. 3.
Embodiment
The main object of the present invention is：Conducting element is designed between two OLEDs of double-sided OLED display panel,
Anode pattern of the both ends of the conducting element respectively with two OLEDs is connected, and need to only be set a thin film transistor (TFT) and be caused
The drain pattern of the thin film transistor (TFT) is connected with the anode pattern of one of OLED, you can will be shown by conducting element
Signal passes to the anode pattern of another OLED, is compared to the design of two thin film transistor (TFT)s, and the present invention can have
Beneficial to the lightening design of double-sided OLED display panel.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, to the skill of each exemplary embodiment provided by the present invention
Art scheme is clearly and completely described.In the case where not conflicting, following each embodiments and its technical characteristic can be mutual
Combination.Also, directional terminology used by various embodiments below of the present invention, such as " on ", " under " etc., it is for more preferable
The each embodiment of description, be not intended to limit protection scope of the present invention.
Fig. 1 is the cross-sectional view of the double-sided OLED display panel of one embodiment of the invention.It is referring to Fig. 1, two-sided
OLED display panel 10 includes substrate 11, and be formed in substrate 11 thin film transistor (TFT), the first OLED
13rd, conducting element, the second OLED 15.Substrate 11 can be flexible substrate base material, such as its material is PI
(Polyimide, polyimides), in this, double-sided OLED display panel 10 can be considered a flexible display panels.Thin film transistor (TFT),
First OLED 13 and conducting element are located at the side of substrate 11, and the second OLED 15 is located at the another of substrate 11
Side.
As Fig. 1 is instigated, thin film transistor (TFT) include gate pattern 121 in substrate 11, gate insulator 122,
Semiconductor pattern 123, source electrode pattern 124, drain pattern 125, flatness layer 126 and passivation layer 127.Conducting element is included positioned at lining
The first conductive pattern 141 in base material 11, and be sequentially located on the first conductive pattern 141 the second conductive pattern 142,
Three conductive patterns 143, the 4th conductive pattern 144 and the 5th conductive pattern 145, the conductive material for preparing this five conductive patterns can
It can also be differed with identical.Wherein：
First conductive pattern 141 and substrate 11 are located at same layer, and both thickness can be considered that first leads with equal
Electrical pattern 141 is embedded in substrate 11, and substrate 11 exposes the upper surface of the first conductive pattern 141.
Second conductive pattern 142 and gate pattern 121 are located at same layer, and both are arranged at intervals, and can use identical material
Matter is simultaneously formed in the processing procedure with along with, and the second conductive pattern 142 is formed directly on the first conductive pattern 141.Gate insulator
122 are located in substrate 11 and cover gate pattern 121, but the upper surface of the second conductive pattern 142 of exposure.Semiconductor pattern
123 are formed on gate insulator 122, and positioned at the top of gate pattern 121.
3rd conductive pattern 143 and source electrode pattern 124 and drain pattern 125 are located at same layer, and in three between any two
Spaced setting, specifically, source electrode pattern 124 and drain pattern 125 are divided into the both ends of semiconductor pattern 123, and the 3rd leads
Electrical pattern 143 is formed directly on the second conductive pattern 142.Flatness layer 126 covers semiconductor pattern 123, the and of source electrode pattern 124
Drain pattern 125, but the upper surface of the exposure conductive pattern 143 of drain pattern 125 and the 3rd.
4th conductive pattern 144 includes two parts, and a part in drain pattern 125, positioned at the 3rd lead by another part
In electrical pattern 143, in this, the 4th conductive pattern 144 upper surface face with the conductive pattern 143 of drain pattern 125 and the 3rd simultaneously
Contact.
5th conductive pattern 145 covers above-mentioned two-part 4th conductive pattern 144, and directly with this two-part 4th
The face of conductive pattern 144 contacts.Passivation layer 127 covers the 5th conductive pattern 145, and offers on the 5th conductive pattern 145 of exposure
The contact hole on surface.
With continued reference to Fig. 1, the structure of the first OLED 13 and the second OLED 15 can be with identical, such as both can be with
Using top light emitting-type design, specifically, the first OLED 13 includes the anode pattern being set in turn on passivation layer 127
131st, luminous pattern 132 and cathode pattern 133, the second OLED 15 include being set in turn in the sun of the opposite side of substrate 11
Pole figure case 151, luminous pattern 152 and cathode pattern 153.The anode pattern 131 of first OLED 13 covers passivation layer 127
Contact hole is simultaneously connected with the 5th conductive pattern 145, and the anode pattern 151 of the second OLED 15 connects with the first conductive pattern 141
Connect.
In the present embodiment, the anode pattern 131 of the drain pattern 125 of thin film transistor (TFT) and the first OLED 13 connects
Connect, one end (the 5th conductive pattern 145) of conducting element is connected, conducting element with the anode pattern 131 of the first OLED 13
The other end (the first conductive pattern 141) exposed by the opposite side of substrate 11, the anode pattern of the second OLED 15
151 are connected with the other end of conducting element.
When applying signal to gate pattern 121, thin film transistor (TFT) conducting, display signal (electric signal) passes through drain electrode
Pattern 125, the 4th conductive pattern 144 and the 5th conductive pattern 145 are transferred to the anode pattern 131 of the first OLED 13, from
And the first OLED 13 is caused to send the light irradiated backwards to substrate 11.The anode pattern 151 of second OLED 15 is logical
Cross conducting element and also receive display signal, also send the light irradiated backwards to substrate 11.Thus, double-sided OLED display panel
10 realize double-sided display.In view of what the first OLED 13 and the second OLED 15 received is same display signal, because
This in synchronization, the double-sided display of double-sided OLED display panel 10 for same image.
It follows that the present embodiment need to only set a thin film transistor (TFT) and cause the drain pattern of the thin film transistor (TFT)
125 are connected with the anode pattern (anode pattern 131 of the first OLED 13) of one of OLED, you can pass through conduction
Element will show that signal passes to the anode pattern (anode pattern 151 of the second OLED 15) of another OLED, phase
It is compared to the design that double face display panel in the prior art includes two thin film transistor (TFT)s, the double-sided OLED display surface of the present embodiment
Plate 10 has the advantages of lightening design.
Referring to Fig. 2, the manufacture method of the double-sided OLED display panel for one embodiment of the invention.The manufacture method can
For forming the double-sided OLED display panel 10 with structure shown in Fig. 1, for ease of description, the present invention is hereafter with the manufacture
Method is used to be formed with illustrating exemplified by the double-sided OLED display panel 10 shown in Fig. 1.
As shown in Fig. 2 the manufacture method comprises the following steps S21 and S22.
S21：Thin film transistor (TFT), the first OLED and conducting element, thin film transistor (TFT) are formed in the side of substrate
Drain pattern be connected with the anode pattern of the first OLED, the anode pattern of one end of conducting element and the first OLED
Connection, the other end of conducting element are exposed by the opposite side of substrate.
S22：The second OLED, the anode pattern and conductive element of the second OLED are formed in the opposite side of substrate
The other end connection of part.
In order to ensure the flatness of substrate 11, it is preferable that substrate 11 can be formed at a flatness by the present embodiment
Substrate (such as glass substrate) on.Based on this, the manufacture method of the present embodiment can include step S30 shown in Fig. 3~
S47。
S30：One infrabasal plate is provided.
With reference to shown in Fig. 4, the infrabasal plate 40 can be the flatness such as glass baseplate, transparent plastic substrate, bendable base material
Good base material.Certainly, the infrabasal plate 40 of the present embodiment can also be provided with passivation protection layer, such as infrabasal plate 40 can include
Substrate and the passivation protection layer being formed on substrate, now substrate can be glass baseplate, transparent plastic substrate, bendable base material
Deng base material, the material of passivation protection layer includes but is not limited to silicon-nitrogen compound, such as Si3N4(silicon nitride, referred to as nitrogenize
Silicon), to protect the structural stability on the surface of infrabasal plate 40.
S31：The first conductive pattern is formed on infrabasal plate.
The present embodiment can form the first conductive pattern with predetermined pattern by optical cover process on infrabasal plate 40
141.Specifically, using PVD (Physical Vapor Deposition, physical vapour deposition (PVD)) method on infrabasal plate 40
A whole face metal level is formed, is then coated with a whole face photoresist layer on the metal layer, then using light shield to a whole face photoresist layer
It is exposed successively and development treatment, the photoresistance of complete exposed portion can be removed with developed liquid, the photoresistance of unexposed portion is not
Developed liquid removes, and then etching removes the metal level not covered by photoresist layer, and removes removing photoresistance layer, the metal level finally retained
It is formed as the first conductive pattern 141.
S32：The substrate of covering infrabasal plate is formed, substrate exposes the upper surface of the first conductive pattern.
The present embodiment can use coating method to coat a PI layers in the upper surface of infrabasal plate 40, and PI layers exposure first is led
The upper surface of electrical pattern 141, PI layers form substrate 11 after solidification.Certainly, substrate 11 can be using other
Flexible substrate base material made of flexible material, it can be considered a flexible display panels in this double-sided OLED display panel 10.
S33：Spaced gate pattern and the second conductive pattern are formed in substrate, the second conductive pattern is formed
In on the first conductive pattern.
Please continue to refer to Fig. 4, the conductive pattern 142 of gate pattern 121 and second interval is formed in substrate 11, conductive
Pattern 142 is formed on the first conductive pattern 141 and both face contacts.Wherein, the conductive pattern 142 of gate pattern 121 and second
Material can with identical, thus the present embodiment can by with along with optical cover process in substrate 11 simultaneously form grid figure
The conductive pattern 142 of case 121 and second, the principle of the optical cover process see the manufacturing process of foregoing first conductive pattern 141, this
Embodiment is no longer repeated herein.
S34：The gate insulator of covering gate pattern is formed in substrate, gate insulator exposes the second conductive pattern
The upper surface of case.
The present embodiment can use CVD (Chemical Vapor Deposition, chemical vapor deposition) method in grid
Gate insulator 122 is formed on pattern 121, the gate insulator 122 is a whole face structure of covering gate pattern 121, but cruelly
Reveal the upper surface of the second conductive pattern 142.Specifically, the thickness of the second conductive pattern 142 is more than the thickness of gate pattern 121,
The upper surface of gate insulator 122 is concordant with the upper surface of the second conductive pattern 142.
Wherein, the material of gate insulator 122 includes but is not limited to Si oxide (SiOx).Certainly, gate insulator 122
Silicon oxide compound layer and the silicon-nitrogen compound being sequentially formed on gate pattern 121, such as SiO can also be included2(titanium dioxide
Silicon) and Si3N4(three silicon nitrides), so as to further improve the wear resistance of gate insulator 122 and insulating properties.
S35：The semiconductor pattern formed on gate insulator above gate pattern.
The present embodiment can use PVD methods to form a whole surface semiconductor layer, and then a whole surface semiconductor layer is based on
The patterning process of light shield, so as to only retain the semiconductor layer positioned at the top of gate pattern 121, it is consequently formed semiconductor pattern
123。
S36：Spaced source electrode pattern, drain pattern and the 3rd conductive pattern two-by-two are formed on gate insulator,
Source electrode pattern and drain pattern are divided into the both ends of semiconductor pattern, and the 3rd conductive pattern is formed on the second conductive pattern.
The present embodiment can use forms source electrode pattern 124 with the patterning process for forming the same principle of gate pattern 121
With drain pattern 125.Also, the 3rd conductive pattern 143 and the material of source electrode pattern 124 and drain pattern 125 can with identical, by
This present embodiment can synchronously form the 3rd conductive pattern 143 by the patterning process on gate insulator 123, and the 3rd
Conductive pattern 143 contacts with the face of the second conductive pattern 142.
S37：The flatness layer of covering semiconductor pattern, source electrode pattern and drain pattern is formed on gate insulator, it is flat
The upper surface of layer exposure drain pattern and the 3rd conductive pattern.
The present embodiment can use the methods of coating to form flatness layer 126, the flatness layer 126 on gate insulator 122
To cover semiconductor pattern 123, source electrode pattern 124 and a whole face structure of drain pattern 125, but flatness layer 126 offers two
Individual opening, the two openings expose the upper surface of drain pattern 125 and the upper surface of the 3rd conductive pattern 143 respectively.
S38：The 4th conductive pattern is formed in the upper surface of drain pattern and the 3rd conductive pattern.
The present embodiment can use PVD methods to deposit the 4th conductive pattern in two openings that flatness layer 126 opens up
144 so that the 4th conductive pattern 144 directly connects with the upper surface of drain pattern 125 and the upper surface of the 3rd conductive pattern 143
Touch.The material of 4th conductive pattern 144 includes but is not limited at least one of Mo (molybdenum) and Al (aluminium).
S39：The 5th conductive pattern being connected with the 4th conductive pattern is formed on the 4th conductive pattern.
The present embodiment can use PVD methods, and combine based on the Patternized technique of optical cover process in the 4th conductive pattern
The 5th conductive pattern 145 is formed on 144.144 straight surfaces brought into contact of 5th conductive pattern 145 and the 4th conductive pattern.
S40：The passivation layer of the 5th conductive pattern of covering is formed, passivation layer offers the 5th conductive pattern upper surface of exposure
Contact hole.
Passivation layer 127 can be with identical with the forming method of flatness layer 126.The passivation layer 127 is the 5th conductive pattern of covering
145 whole face structure, but offer the contact hole of the upper surface of the 5th conductive pattern 145.The contact hole is located at the 3rd conductive pattern
The surface of case 143.Certainly, in the case of passivation layer 127 are formed using other modes, the present embodiment can use etching mode
The contact hole is formed in a whole face passivation layer 127.
S41：Form the first OLED over the passivation layer, the anode pattern covering contact hole of the first OLED and with the
Five conductive patterns connect.
First OLED 13 can use top light emitting-type design, and specifically, it includes being sequentially located on passivation layer 127
Anode pattern 131, luminous pattern 132 and cathode pattern 133.The material of the anode pattern 131 can be selected Al (aluminium), Ag (silver) and
At least one of ITO (Indium tin oxide, tin indium oxide), also, the manufacture method of first OLED 13 can
Refering to prior art, do not repeated herein.
S42：An encapsulated layer is formed, encapsulated layer and substrate surround an accommodation space, thin film transistor (TFT), the first OLED devices
Part and conducting element are located in accommodation space.
As shown in figure 4, the encapsulated layer 41 includes two parts, Part I is arranged at the top of cathode pattern 133, Part II
It is arranged between Part I and substrate 11, in this, encapsulated layer 41 and substrate 11 surround an accommodation space, so that will
Thin film transistor (TFT), the first OLED 13 and conducting element are enclosed in water proof oxygen barrier environment.The present embodiment can use film
Packaged type forms the encapsulated layer 41, and its material includes but is not limited to the inorganic matter of water proof oxygen barrier.
S43：One upper substrate is set on encapsulated layer.
The upper substrate 42 includes but is not limited to glass baseplate, transparent plastic substrate and bendable base material, and it can directly set
It is placed on encapsulated layer 41, the top of encapsulated layer 41 can also be arranged at intervals at.
S44：A protective layer, protective layer, upper base are formed between upper substrate and substrate and positioned at the periphery of encapsulated layer
Plate and substrate surround a confined space.
Protective layer 43 can be UV glue by being formed by curing, it is closed that it is with upper substrate 42, substrate 11 collectively forms one
Space, the confined space is used for all component for protecting it internal, such as the first OLED 13, injury-free.
S45：Infrabasal plate and substrate are separated.
The present embodiment can be separated infrabasal plate 40 and substrate 11 using laser mode.
S46：The second OLED, the anode pattern and conductive element of the second OLED are formed in the opposite side of substrate
The other end connection of part.
Second OLED 15 can use top light emitting-type design, and specifically, it includes being set in turn in substrate 11
Anode pattern 151, luminous pattern 152 and the cathode pattern 153 of opposite side, the conductive pattern 141 of anode pattern 151 and first
Lower surface contacts.
Outside second OLED 15, the present embodiment is also equipped with encapsulated layer 41, the encapsulated layer 41 and substrate
11 surround an accommodation space, so as to which the second OLED 15 is enclosed in water proof oxygen barrier environment.
S47：Substrate is cut along the cut-off rule between protective layer and encapsulated layer, to remove protective layer and upper base
Plate.
The present embodiment can be using the boundary line in the outside of encapsulated layer 41 as cut-off rule 411, and along cut-off rule 411 to substrate
Base material 11 is cut by laser, and protective layer 43 and upper substrate 42 automatically disengage after cutting, it is hereby achieved that two-sided shown in Fig. 1
OLED display panel 10.
Illustrate again, the foregoing is only embodiments of the invention, be not intended to limit the scope of the invention, it is every
The equivalent structure or equivalent flow conversion made using description of the invention and accompanying drawing content, such as technology is special between each embodiment
Sign is be combined with each other, or is directly or indirectly used in other related technical areas, and the patent for being similarly included in the present invention is protected
In the range of shield.
Claims (10)
- A kind of 1. double-sided OLED display panel, it is characterised in that including：Substrate；Positioned at the thin film transistor (TFT) of the substrate side, the first OLED and conducting element, the thin film transistor (TFT) Drain pattern is connected with the anode pattern of first OLED, one end of the conducting element and first OLED Anode pattern connection, the other end of the conducting element exposed by the opposite side of the substrate；Positioned at the second OLED of the substrate opposite side, anode pattern and the conduction of second OLED The other end connection of element.
- 2. double-sided OLED display panel according to claim 1, it is characterised in that the substrate includes flexible substrate Base material.
- 3. double-sided OLED display panel according to claim 1, it is characterised in that the thin film transistor (TFT) includes being located at institute State gate pattern, gate insulator, semiconductor pattern, source electrode pattern, drain pattern, flatness layer and the passivation in substrate Layer, the conducting element include the first conductive pattern being located in the substrate, and are sequentially located at first conduction The second conductive pattern, the 3rd conductive pattern, the 4th conductive pattern and the 5th conductive pattern on pattern, first conductive pattern It is located at same layer with the substrate, second conductive pattern and the gate pattern are located at same layer, and the described 3rd leads Electrical pattern and the source electrode pattern and the drain pattern are located at same layer, and the flatness layer covers the semiconductor pattern, source Pole figure case and drain pattern and the upper surface of the exposure drain pattern and the 3rd conductive pattern, the 4th conductive pattern are located at The upper surface of the drain pattern and the 3rd conductive pattern, the 5th conductive pattern be located on the 4th conductive pattern and with The 4th conductive pattern connection, the passivation layer cover the 5th conductive pattern and offer exposure the 5th conductive pattern The contact hole of case upper surface, the anode pattern of first OLED cover the contact hole and with the 5th conductive pattern Connection, the anode pattern of second OLED are connected with first conductive pattern.
- A kind of 4. manufacture method of double-sided OLED display panel, it is characterised in that including：Thin film transistor (TFT), the first OLED and conducting element, the leakage of the thin film transistor (TFT) are formed in the side of substrate Pole figure case is connected with the anode pattern of first OLED, one end of the conducting element and first OLED Anode pattern connects, and the other end of the conducting element is exposed by the opposite side of the substrate；The second OLED is formed in the opposite side of the substrate, the anode pattern of second OLED is led with described The other end connection of electric device.
- 5. manufacture method according to claim 4, it is characterised in that the substrate is formed by flexible material.
- 6. manufacture method according to claim 4, it is characterised in that substrate side formed thin film transistor (TFT), First OLED and conducting element, including：One infrabasal plate is provided；The first conductive pattern is formed on the infrabasal plate；The substrate for covering the infrabasal plate is formed, the substrate exposes the upper surface of first conductive pattern；Spaced gate pattern and the second conductive pattern are formed in the substrate, second conductive pattern is formed In on first conductive pattern；Form the gate insulator for covering the gate pattern in the substrate, the gate insulator exposure described the The upper surface of two conductive patterns；The semiconductor pattern formed on the gate insulator above the gate pattern；Spaced source electrode pattern, drain pattern and the 3rd conductive pattern two-by-two are formed on the gate insulator, it is described Source electrode pattern and drain pattern are divided into the both ends of the semiconductor pattern, and the 3rd conductive pattern is formed at described second and led In electrical pattern；The flatness layer for covering the semiconductor pattern, source electrode pattern and drain pattern is formed on the gate insulator, it is described Flatness layer exposes the upper surface of the drain pattern and the 3rd conductive pattern；The 4th conductive pattern is formed in the upper surface of the drain pattern and the 3rd conductive pattern；The 5th conductive pattern being connected with the 4th conductive pattern is formed on the 4th conductive pattern；The passivation layer for covering the 5th conductive pattern is formed, the passivation layer offers exposure the 5th conductive pattern upper table The contact hole in face；The first OLED is formed on the passivation layer, the anode pattern of first OLED covers the contact hole simultaneously It is connected with the 5th conductive pattern；An encapsulated layer is formed, the encapsulated layer and the substrate surround an accommodation space, the thin film transistor (TFT), first OLED and conducting element are located in the accommodation space.
- 7. manufacture method according to claim 6, it is characterised in that the infrabasal plate includes glass substrate.
- 8. manufacture method according to claim 6, it is characterised in that after the encapsulated layer is formed, the manufacturer Method also includes：One upper substrate is set on the encapsulated layer；Protective layer, the protection are formed between the upper substrate and the substrate and positioned at the periphery of the encapsulated layer Layer, the upper substrate and the substrate surround a confined space.
- 9. manufacture method according to claim 8, it is characterised in that form second in the opposite side of the substrate Before OLED, the manufacture method also includes：The infrabasal plate and the substrate are separated.
- 10. manufacture method according to claim 9, it is characterised in that form second in the opposite side of the substrate After OLED, the manufacture method also includes：The substrate is cut along the cut-off rule between the protective layer and the encapsulated layer, to remove the protection Layer and the upper substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711038812.5A CN107833904B (en) | 2017-10-30 | 2017-10-30 | Double-sided OLED display panel and manufacturing method thereof |
| PCT/CN2017/112619 WO2019085080A1 (en) | 2017-10-30 | 2017-11-23 | Double-sided oled display panel and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711038812.5A CN107833904B (en) | 2017-10-30 | 2017-10-30 | Double-sided OLED display panel and manufacturing method thereof |
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| CN107833904A true CN107833904A (en) | 2018-03-23 |
| CN107833904B CN107833904B (en) | 2020-03-31 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860247A (en) * | 2019-01-18 | 2019-06-07 | 深圳市华星光电半导体显示技术有限公司 | A kind of double face display panel and its display device |
| CN109920928A (en) * | 2019-02-26 | 2019-06-21 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN112542097A (en) * | 2020-12-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Double-sided display panel and preparation method thereof |
| CN113366645A (en) * | 2019-12-19 | 2021-09-07 | 重庆康佳光电技术研究院有限公司 | Double-sided TFT panel, manufacturing method thereof and display device |
| WO2024000653A1 (en) * | 2022-06-28 | 2024-01-04 | 武汉华星光电半导体显示技术有限公司 | Display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247656A (en) * | 2012-02-07 | 2013-08-14 | 瀚宇彩晶股份有限公司 | Organic electroluminescent display device |
| CN105140260A (en) * | 2015-07-23 | 2015-12-09 | 京东方科技集团股份有限公司 | Organic light-emitting diode array substrate and manufacturing method thereof and display device |
| CN106601777A (en) * | 2016-12-28 | 2017-04-26 | 武汉华星光电技术有限公司 | Double-surface display device |
-
2017
- 2017-10-30 CN CN201711038812.5A patent/CN107833904B/en active Active
- 2017-11-23 WO PCT/CN2017/112619 patent/WO2019085080A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247656A (en) * | 2012-02-07 | 2013-08-14 | 瀚宇彩晶股份有限公司 | Organic electroluminescent display device |
| CN105140260A (en) * | 2015-07-23 | 2015-12-09 | 京东方科技集团股份有限公司 | Organic light-emitting diode array substrate and manufacturing method thereof and display device |
| CN106601777A (en) * | 2016-12-28 | 2017-04-26 | 武汉华星光电技术有限公司 | Double-surface display device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860247A (en) * | 2019-01-18 | 2019-06-07 | 深圳市华星光电半导体显示技术有限公司 | A kind of double face display panel and its display device |
| WO2020147184A1 (en) * | 2019-01-18 | 2020-07-23 | 深圳市华星光电半导体显示技术有限公司 | Double-sided display panel and display device thereof |
| CN109920928A (en) * | 2019-02-26 | 2019-06-21 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN113366645A (en) * | 2019-12-19 | 2021-09-07 | 重庆康佳光电技术研究院有限公司 | Double-sided TFT panel, manufacturing method thereof and display device |
| CN112542097A (en) * | 2020-12-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Double-sided display panel and preparation method thereof |
| WO2024000653A1 (en) * | 2022-06-28 | 2024-01-04 | 武汉华星光电半导体显示技术有限公司 | Display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107833904B (en) | 2020-03-31 |
| WO2019085080A1 (en) | 2019-05-09 |
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