CN107827079A - A kind of preparation method of MEMS chip - Google Patents
A kind of preparation method of MEMS chip Download PDFInfo
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- CN107827079A CN107827079A CN201711145570.XA CN201711145570A CN107827079A CN 107827079 A CN107827079 A CN 107827079A CN 201711145570 A CN201711145570 A CN 201711145570A CN 107827079 A CN107827079 A CN 107827079A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
The invention discloses a kind of preparation method of MEMS chip, and before cutting crystal wafer, a cover plate has been bonded in the upper surface of wafer, and the working region for the MEMS chip that tunic can closing wafer upper surface is formed now is pasted in lid surface.Due to cutting when need to wash by water, now by working region closing can avoid bath when water to working region in micro-structural destruction.Can be with the occlusion area in masking work region in the cover plate of crystal column surface bonding, can no longer adds the catch for covering above-mentioned occlusion area in follow-up encapsulation process.Just complete wafer release before being cut simultaneously, release efficiency can be greatly increased.
Description
Technical field
The present invention relates to micro electro mechanical system field, more particularly to a kind of preparation method of MEMS chip.
Background technology
MEMS (Micro-Electro-Mechanical System, MEMS) is that one kind is based on microelectric technique
With micro-processing technology and a kind of caused high-tech area.MEMS technology can be by mechanical component, driving part, electric-control system, number
Word processing system etc. is integrated into the tiny cells of an entirety, and the tiny cells for integrating out are referred to as MEMS chip.
When making MEMS chip, there are two important steps, one is needing to discharge MEMS, the step is will be in crystalline substance
Microstructure, i.e. MEMS structure are formed on circle；The second is need to cut wafer to isolate each MEMS chip.Making
During MEMS chip, if first cutting crystal wafer, release can be substantially reduced each MEMS chip cut down is carried out into release respectively
Efficiency.If wafer first is discharged into cutting crystal wafer again, produced when may destroy the micro-structural formed in crystal column surface, while cut
Raw silicon bits white residue can pollute MEMS structure, cause the yields that entirely produces very low.
In the prior art, typically whole wafer is discharged, then the surface of wafer is covered in double-layer filmses, its
In the film that directly contacts with wafer need to be punched, to form the space of chip placement micro-structural.Finally in cutting crystal wafer,
To form MEMS chip.
But in the prior art, the complicated process of increase is needed during pad pasting, while carry out using punching pad pasting
Protect and do not apply to and the MEMS chip of large-size.
The content of the invention
It is an object of the invention to provide a kind of preparation method of MEMS chip, it is possible to prevente effectively from the current in cutting process
To the destruction caused by working region in MEMS chip.
In order to solve the above technical problems, the present invention provides a kind of preparation method of MEMS chip, methods described includes：
Wafer is discharged, to form the working region of MEMS chip in the upper surface of the wafer；Wherein, the workspace
Domain includes pixel region and occlusion area；
The lower surface of cover plate is bonded to the upper surface of the wafer, to cover the occlusion area；Wherein, the cover plate
Lower surface fluted and through the cover plate first inner chamber is set, the groove corresponds to the working region, the groove
Lower surface in correspond to the second inner chamber that the pixel region is provided through the cover plate, described in the first inner chamber is corresponding
Pad in MEMS chip；
In the upper table mask of the cover plate, to close the second inner chamber；
The wafer is cut from the lower surface of the wafer, so that the MEMS chip is made.
Optionally, the upper table mask in the cover plate includes：
UV films are pasted in the upper surface of the cover plate；
After the cutting from the lower surface of the wafer, methods described also includes：
The UV films are irradiated by UV irradiating machines, to separate the UV films.
Optionally, the energy range of emitting ultraviolet light line is during the UV irradiating machines work：100mj/cm2To 500mj/
cm2, including endpoint value.
Optionally, before the wafer from the cutting of the lower surface of the wafer, methods described also includes：
The wafer is thinned from the lower surface of the wafer.
Optionally, after the wafer being thinned in the lower surface from the wafer, the value of the thickness of the wafer
Scope is：100 μm to 500 μm, including endpoint value.
Optionally, the upper surface that the lower surface of cover plate is bonded to the wafer includes：
The lower surface of the cover plate is welded in the upper surface of the wafer by solder.
Optionally, the span of the thickness of the cover plate is：200 μm to 500 μm, including endpoint value.
Optionally, it is described to include from the lower surface of the wafer cutting wafer：
The lower surface of the wafer is cut for the first time by twin shaft cutting machine, with MEMS chip described in initial gross separation；
The wafer and the cover plate are cut through by the twin shaft cutting machine for the second time, to be finally recovered the MEMS cores
Piece.
The preparation method of a kind of MEMS chip provided by the present invention, before cutting crystal wafer, in the upper surface key of wafer
A cover plate has been closed, the workspace for the MEMS chip that tunic can closing wafer upper surface is formed now is pasted in lid surface
Domain.Due to cutting when need to wash by water, now by working region closing can avoid bath when water to working region in it is micro-
Structural damage.Can be with the occlusion area in masking work region, in follow-up encapsulation process in the cover plate of crystal column surface bonding
Can no longer adds the catch for covering above-mentioned occlusion area.Just complete wafer release, Ke Yi great before being cut simultaneously
Big increase release efficiency.
Brief description of the drawings
, below will be to embodiment or existing for the clearer explanation embodiment of the present invention or the technical scheme of prior art
The required accompanying drawing used is briefly described in technology description, it should be apparent that, drawings in the following description are only this hair
Some bright embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to these accompanying drawings.
A kind of flow chart for MEMS chip preparation method that Fig. 1 is provided by the embodiment of the present invention；
A kind of structural representation for wafer that Fig. 2 is provided by the embodiment of the present invention；
A kind of sectional view for wafer that Fig. 3 is provided by the embodiment of the present invention；
A kind of structural representation for cover plate that Fig. 4 is provided by the embodiment of the present invention；
A kind of sectional view for cover plate that Fig. 5 is provided by the embodiment of the present invention；
A kind of structural representation for MEMS chip that Fig. 6 is provided by the embodiment of the present invention；
A kind of flow chart for specific MEMS chip preparation method that Fig. 7 is provided by the embodiment of the present invention；
The structural representation of wafer before a kind of cutting that Fig. 8 is provided by the embodiment of the present invention；
The structural representation of wafer after a kind of cutting that Fig. 9 is provided by the embodiment of the present invention；
The structural representation of wafer after a kind of expansion film that Figure 10 is provided by the embodiment of the present invention；
The structural representation of wafer after a kind of fixation that Figure 11 is provided by the embodiment of the present invention.
In figure：1. wafer, 2.MEMS chips, 20. working regions, 21. pixel regions, 22. occlusion areas, 23. pads, 3.
It is cover plate, 4. engraved structures, 41. first inner chambers, 42. grooves, 43. second inner chambers, 5.UV films, the 6. special frameworks of cutting, 7. thin
Brilliant ring is expanded in film, 8..
Embodiment
The core of the present invention is to provide a kind of preparation method of MEMS chip.In the prior art, typically will be whole brilliant
Circle is discharged, then the surface of wafer is covered in double-layer filmses, wherein need to be punched with the film that wafer directly contacts,
To form the space of chip placement micro-structural.Finally in cutting crystal wafer, to form MEMS chip.Wherein by the film meeting of punching
It is fitted in around MEMS structure, to support film of the superiors without punching.And the superiors film requirement not with crystalline substance
The MEMS structure of circular surfaces is in contact.As a rule film is easily deformed upon than relatively thin while also softer.If it is located at lower floor
Film on the boring ratio beaten it is larger, the film positioned at upper strata is easy for deforming upon and touches MEMS structure, i.e., using punching
Pad pasting carries out the MEMS chip that protection is not particularly suited for large-size.Also it is due to simultaneously that film is relatively thin under normal circumstances, if whole
Individual MEMS structure is higher, and the film positioned at upper strata equally readily accesses MEMS structure.Subsequently whether take off film or
During being cutting crystal wafer, all easily to needing MEMS structure to be protected to damage.
And a kind of preparation method of MEMS chip provided by the present invention, before cutting crystal wafer, in the upper surface of wafer
A cover plate has been bonded, the work for the MEMS chip that tunic can closing wafer upper surface is formed now is pasted in lid surface
Region.Due to cutting when need to wash by water, now by working region closing can avoid bath when water in working region
The destruction of micro-structural.Can be with the occlusion area in masking work region, in follow-up encapsulation process in the cover plate of crystal column surface bonding
Middle can no longer adds the catch for covering the occlusion area.Just wafer is discharged before being cut simultaneously, Ke Yi great
Big increase release efficiency.
In order that those skilled in the art more fully understand the present invention program, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiment is only part of the embodiment of the present invention, rather than
Whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, belongs to the scope of protection of the invention.
It refer to Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6, a kind of MEMS chip that Fig. 1 is provided by the embodiment of the present invention
The flow chart of preparation method；A kind of structural representation for wafer that Fig. 2 is provided by the embodiment of the present invention；Fig. 3 is real for the present invention
Apply a kind of sectional view for wafer that example is provided；A kind of structural representation for cover plate that Fig. 4 is provided by the embodiment of the present invention；Figure
A kind of sectional view of 5 cover plates provided by the embodiment of the present invention；A kind of MEMS chip that Fig. 6 is provided by the embodiment of the present invention
Structural representation.
Referring to Fig. 1, in embodiments of the present invention, the preparation method of the MEMS chip includes：
S101：Wafer is discharged, to form the working region of MEMS chip in the upper surface of wafer.
Referring to Fig. 2 and Fig. 3, many complicated three-dimensional structure either supporting constructions are all to utilize sacrifice layer in MEMS structure
Release process is able to what is made.In this step, the upper surface deposition of wafer 1 has a structural material, and beforehand through photoetching or
It is that etching technics has produced the MEMS structure needed.In the upper surface of wafer 1, the structural material of deposition is also commonly referred to as sacrifice layer.
The main silica of conventional sacrificial layer material, polysilicon, amorphous carbon, polyimides etc..Above-mentioned release is to utilize oxidizing gas
Unwanted redundant structure in above-mentioned sacrifice layer is oxidized to escaping gas, and the escaping gas is discharged, is now left
Structure be exactly the MEMS structure needed.
Relevant specific release steps, it is generally the case that be the above-mentioned wafer 1 that will be placed on by mechanical arm in magazine
It is put into resist remover, can also be used during wafer 1 is transmitted to release pallet or load plate, naturally it is also possible to without using
Release pallet or load plate are transmitted.After wafer 1 is put into resist remover, wafer 1 is released typically in resist remover
Put.Due to being directly to be discharged whole wafer 1 in this step, so in this step, the release of wafer 1 is fallen within into wafer
Level release.In embodiments of the present invention, the number of release wafer 1 is typically between 25pcs in 1pcs every time, i.e. is released every time
The number for putting wafer 1 is typically between 1 to 25.Certainly it is different according to the volume of resist remover and space, can also be same
When discharge varying number wafer 1.Number about release wafer 1 every time is not specifically limited in embodiments of the present invention.By
In multiple wafers 1 can be discharged simultaneously in embodiments of the present invention, equipment compatibility is improved, while it is equal to improve release product
Even property and repeatability.
Certainly, transmitting the process of wafer 1 can also transmit in other way, while discharges wafer 1 and can also use
Other equipment, in embodiments of the present invention and it is not specifically limited, as long as the purpose of the present invention can be realized.
In embodiments of the present invention, MEMS structure is prepared on the surface of wafer 1, and wherein MEMS structure is also referred to as workspace
Domain 20.MEMS chip 2 includes working region 20 and pad 23 in embodiments of the present invention, and wherein working region 20 includes picture
First region 21 and occlusion area 22.
The MEMS chip 2 of the present invention particularly applies the uncooled ir chip in infrared camera, in workspace
Pixel region 21 and occlusion area 22 are usually provided with domain 20.Wherein pixel region 21 is the infrared light for receiving the external world
Line, and then form infrared image；And occlusion area 22 is also referred to as Blind regions, occlusion area 22 be for when object of reference uses,
The occlusion area 22 will not receive the infrared light in the external world.In embodiments of the present invention, whole MEMS chip 2 passes through contrast
The information that pixel region 21 is generated can generate corresponding infrared image with the information that occlusion area 22 is generated.
In embodiments of the present invention, wafer 1 is being usually siliceous wafer at this stage.Certainly in embodiments of the present invention not
It is siliceous wafer to limit the wafer 1, and the wafer 1 can be suitable as any materials of the substrate of MEMS chip 2, relevant institute
The specific material for stating wafer 1 is not specifically limited in embodiments of the present invention.
S102：The lower surface of cover plate is bonded to the upper surface of wafer, to cover occlusion area.
Referring to Fig. 4 and Fig. 5, in embodiments of the present invention, cover plate 3 itself is generally also wafer, but is making cover plate 3
The engraved structure 4 of multiple corresponding MEMS chips 2 is usually provided with wafer, the engraved structure 4 is included in fluted 42, first
The structure such as chamber 41 and second inner chamber 43, ultimately forms cover plate 3 used in the embodiment of the present invention.Certainly, following wafers is special
Refer to wafer of the surface formed with working region 20, do not imply that for the cover plate 3 described in this step.
Relevant specific bonding process will be described in detail in following inventive embodiments, be repeated no more in this step.
Referring to Fig. 6, in embodiments of the present invention, the effect for being bonded in the cover plate 3 of the upper surface of wafer 1, which is that masking is above-mentioned, blocks
Region 22, i.e. ambient will not be irradiated to occlusion area 22 by cover plate 3.Certainly, except masking occlusion area 22 this
Outside effect, it can also be formed being arranged on around each working region 20 of the upper surface of wafer 1 around the working region 20
Retaining wall, working region 20 inside retaining wall protected with this.
In embodiments of the present invention, the lower surface of the cover plate 3 sets fluted 42 and in the first of the cover plate 3
Chamber 41, the groove 42 correspond to the working region 20, and corresponding to the pixel region 21 in the lower surface of the groove 42 is set
There is the second inner chamber 43 through the cover plate 3, the first inner chamber 41 corresponds to the pad 23 in the MEMS chip 2.
Above-mentioned first inner chamber 41 is typically to run through cover plate 3 along the thickness direction of cover plate 3.In embodiments of the present invention in first
Pad 23 in the corresponding MEMS chip 2 of chamber 41, i.e., described pad 23 can be in communication with the outside by first inner chamber 41.At this
MEMS chip 2 is further typically provided with being used for routing pad 23, operator in addition to working region 20 in inventive embodiments
Member by pad 23 routing MEMS chip 2 is connected with other equipment.MEMS chip 2 can be set under normal circumstances
Multiple pads 23, for a MEMS chip 2, multiple pads 23 are typically distributed on two relative two of working region 20
Side.
The corresponding working region 20 of above-mentioned groove 42, i.e., when the lower surface of cover plate 3 and the upper surface of wafer 1 are bonded in one
When rising, the space in the groove 42 of the lower surface of cover plate 3 can accommodate the working region 20 for being arranged on the upper surface of wafer 1.This
When groove 42 side wall can surround the working region 20, and then protection is played a part of to working region 20.
Above-mentioned second inner chamber 43 is located at the position that pixel region 21 is corresponded in above-mentioned groove 42, and usual second inner chamber 43 is also
Run through cover plate 3 along the thickness direction of cover plate 3.The corresponding above-mentioned pixel region 21 of second inner chamber 43 in embodiments of the present invention, i.e., it is outer
The light on boundary can be irradiated to pixel region 21 by second inner chamber 43.Under normal circumstances, second inner chamber 43 is along parallel to cover plate 3
The sectional area in the direction of lower surface needs the area more than or equal to pixel region 21, to ensure that whole pixel region 21 can
Receive the light in the external world.Groove 42 due to corresponding to above-mentioned occlusion area 22 in above-mentioned groove 42 is not provided with running through cover plate 3
Inner chamber, so the bottom of above-mentioned groove 42 forms the structure of similar baffle plate so that extraneous light will not be irradiated to blocked area
Domain 22.
In embodiments of the present invention, the upper surface of next piece of wafer 1 of normal conditions can form multiple working regions 20, and
Each piece of working region 20 can be corresponded in advance in the upper surface of wafer 1, and multiple pads 23 are set.So would generally in above-mentioned cover plate 3
Multiple first inner chambers 41 are set, so as to corresponding with above-mentioned pad 23；Above-mentioned cover plate 3 can also set multiple grooves 42, multiple recessed
Groove 42 will generally correspond with multiple working regions 20；The second inner chamber 43 for being arranged on the lower surface of groove 42 is also required to and pixel
Region 21 corresponds.
In embodiments of the present invention, S102 can be performed before S101, can also be performed after S101.Certainly generally
In the case of S102 be to be performed after S101.If because cover plate 3 first is bonded into above-mentioned wafer 1, then wafer 1 is discharged,
The cover plate 3 may influence whether the uniformity of the upper surface of wafer 1 release.
S103：In the upper table mask of cover plate, to close second inner chamber.
In this step, upper surface of the lower surface of cover plate 3 with wafer 1 is bonded together, now in the upper of cover plate 3
Film on surface, it is possible to close through-thickness through the inner chamber of cover plate 3.In this step, can at least be closed by film
Above-mentioned second inner chamber 43, because second inner chamber 43 connects the working region 20 for being arranged on the upper surface of wafer 1, cut through in follow-up
Cheng Zhongruo does not close the current of second inner chamber 43 can be by the concrete structure in the destruction work region 20 of second inner chamber 43.And first inner chamber
41 connections are pads 23, and pad 23 is will not to produce damage because of current when cutting in cutting process under normal circumstances
, so in this step, by the upper table mask in cover plate 3, at least to close second inner chamber 43.Certainly under normal circumstances
It is all to be closed above-mentioned second inner chamber 43 and first inner chamber 41.
S104：From the lower surface cutting crystal wafer of wafer, so that MEMS chip is made.
In this step, can be cut from the lower surface of wafer 1, and most at last whole wafer 1 and with the key of wafer 1
The cover plate 3 of conjunction is drawn, and to isolate MEMS chip 2, i.e., MEMS chip 2 is finally made.Cut from the lower surface of wafer 1,
The generation of silicon bits white residue can be effectively reduced in cutting.Relevant specific cutting process will be done in detail in following inventive embodiments
Thin description, is no longer repeated herein.
After wafer 1 has been cut, generally also need to be sorted the MEMS chip 2 of well cutting, in subsequent step,
Typically also need to be packaged MEMS chip 2.
The preparation method of a kind of MEMS chip provided by the present invention, before cutting crystal wafer 1, in the upper surface of wafer 1
A cover plate 3 has been bonded, the MEMS chip 2 that tunic can closing wafer 1 upper surface is formed now is pasted on the surface of cover plate 3
Working region 20.Due to cutting when need to wash by water, now by working region 20 close can avoid bath when water to work
Make the destruction of micro-structural in region 20.Can be with the occlusion area in masking work region 20 in the cover plate 3 of the surface bond of wafer 1
22, can no longer adds the catch for covering occlusion area 22 in follow-up encapsulation process.It is simultaneously just complete before being cut
Discharged into wafer 1, release efficiency can be greatly increased.
In the present invention, it further can improve cutting efficiency by the step such as wafer 1 being thinned, or realize it
His purpose.Detailed content will be described in detail in following inventive embodiments.
It refer to Fig. 7, Fig. 8, Fig. 9, Figure 10 and Figure 11, a kind of specific MEMS that Fig. 7 is provided by the embodiment of the present invention
The flow chart of chip manufacture method；The structural representation of wafer before a kind of cutting that Fig. 8 is provided by the embodiment of the present invention；Fig. 9
The structural representation of wafer after a kind of cutting provided by the embodiment of the present invention；Figure 10 provided by the embodiment of the present invention one
Kind expands the structural representation of wafer after film；The structural representation of wafer after a kind of fixation that Figure 11 is provided by the embodiment of the present invention
Figure.
Referring to Fig. 7, in embodiments of the present invention, the preparation method of the MEMS chip can include：
S201：From the lower surface thinned wafer of wafer.
The purpose of this step is the wafer 1 described in foregoing invention embodiment being thinned, so as to be advantageous to follow-up
The efficiency of cutting crystal wafer 1 is improved in cutting process.As long as it is essentially that the thickness of wafer 1 is thinned before cutting crystal wafer 1
The efficiency of cutting crystal wafer 1 can be improved.Under normal circumstances, need to carry out pad pasting in the upper surface of wafer 1 when thinned wafer 1
To protect 1 positive MEMS structure of wafer., it is necessary to which the film of the front of wafer 1 patch is taken off after wafer 1 is thinned.
The common span of thickness of wafer 1 after being thinned is：100 μm to 500 μm, including endpoint value.I.e. described crystalline substance
The thickness of circle 1 can be exactly 100 μm or 500 μm.Certainly, due to the difference of actual application environment, the thickness of different wafers 1 is also
Can take other values, the thickness for the wafer 1 and be not specifically limited in embodiments of the present invention.
S202：Wafer is discharged, to form the working region of MEMS chip in the upper surface of wafer.
This step is identical with the S101 in foregoing invention embodiment, and detailed content refer to foregoing invention embodiment, secondary
No longer repeated.
S203：Wafer is tested using probe station.
After S202, wafer 1 can be passed back magazine from resist remover, now can be directly using probe station to wafer
1 is tested.Typically directly all working region on the surface of wafer 1 is tested due to being tested here, so
Also referred to as wafer-level test.Test is carried out here and does not need batch turning box, so as to improve equipment compatibility, and is greatly improved
Production efficiency.
S204：The lower surface of cover plate is welded in the upper surface of wafer by solder.
During wafer 1 is pre-machined, the surrounding in each working region 20 is provided with welding ring.In this step
In, the lower surface of cover plate 3 can be welded in the upper table of wafer 1 by being arranged on the welding ring of the surrounding of working region 20 with solder
Face, so as to which cover plate 3 to be bonded to the upper surface of the wafer 1.In embodiments of the present invention, the span of the thickness of cover plate 3
For：200 μm to 500 μm, including endpoint value.The thickness of i.e. described cover plate 3 can be exactly 200 μm or 500 μm.Certainly, due to
The difference of actual application environment, the thickness of different cover plates 3, which can also be, takes other values, in embodiments of the present invention for described
The thickness of cover plate 3 is simultaneously not specifically limited.
S205：UV films are pasted in the upper surface of cover plate.
UV (Ultraviolet Rays, the ultraviolet light) film is the film material for having UV glue in plastic basis material surface smear
Material.UV films 5 after the upper surface of cover plate 3 is covered with UV films 5, can be being sealed through commonly used adhesive tape when making chip
While closing second inner chamber 43, the integrality of wafer 1 in cutting process is maintained at, the wafer 1 in cutting process is reduced and collapses broken feelings
The generation of condition.
S206：The lower surface of wafer is cut for the first time by twin shaft cutting machine, with initial gross separation MEMS chip.
S207：Wafer and cover plate are cut through by twin shaft cutting machine for the second time, to be finally recovered MEMS chip.
Referring to Fig. 8 and Fig. 9, usually require the above-mentioned wafer 1 for being bonded with cover plate 3 tipping upside down on cutting specially in cutting process
On framework 6, fitted between wafer 1 and the special framework 6 of cutting by the UV films 5 in S205.Now wafer 1 the past
Following table is face-up, i.e., the back side of wafer 1 is upward.
In embodiments of the present invention, preferably by twin shaft cutting machine by twice cutting wafer 1 and cover plate 3 completely
Thoroughly, so that most MEMS chip 2 separates at last.MEMS chip 2 can be reduced by cutting twice chipping occurs, while can reduced point
The film of the chip edge separated out is fallen off.Concretely, by twin shaft cutting machine can by cutting twice by wafer 1 with
Cover plate 3 is cut through.In embodiments of the present invention, cutting for the first time is capped from the lower surface of wafer 1 incision wafer 1 under normal circumstances
The 30% to 70% or so of the gross thickness of plate 3；Second of cutting is cut again from the vestige of first time cutting, second
Secondary cutting needs completely to draw wafer 1 and cover plate 3, needs incision to be attached to the upper surface of cover plate 3 in S205 under normal circumstances
20 μm to 50 μm in UV films 5.Certainly, due to not limited in embodiments of the present invention the thickness of wafer 1 and cover plate 3
It is fixed, similarly do not do specific restriction equally about each cutting thickness of twin shaft cutting machine, i.e. knife up.
In embodiments of the present invention, after S207, it will usually which the wafer 1 after cutting is cleaned and dried.
S208：UV films are irradiated by UV irradiating machines, to separate UV films.
Need from the upper surface of cover plate 3 to take the UV films 5 for being fitted in the upper surface of cover plate 3 in S205 off in this step, now
Typically use UV irradiating machines and carry out emitting ultraviolet light line irradiation UV films 5.The wavelength of the ultraviolet light is generally in 365nm or so.
The also commonly referred to as solution UV of UV films 5 is irradiated by UV irradiating machines.Wherein the operating time of UV irradiating machines is generally at 0.5 minute to 5.0
Between minute, the energy range of emitting ultraviolet light line is usually during work：100mj/cm2To 500mj/cm2, including endpoint value.I.e.
The energy of emitting ultraviolet light line can be exactly 100mj/cm when UV irradiating machines work2Or 500mj/cm2.Certainly, the UV irradiations
The operating time of machine can also have other values with the energy of emitting ultraviolet light line, as long as UV can be solved, of the invention real
Apply in example and be not specifically limited.The UV films 5 are irradiated using UV irradiating machines, the viscosity drop of the UV glue on the surface of UV films 5 can be caused
As little as 1% to 10%, so as to reach the purpose of separation UV films 5.
S209：By die reversing machine wafer following table mask.
In S206, it will usually by the back-off of wafer 1, i.e., the back side of the former lower surface, i.e. wafer 1 of wafer 1 after S206
Understand towards upper.In this step, die reversing machine can will be from newly by the back-off of wafer 1, now the former lower surface of wafer 1 can be re-directed towards
Under, i.e., the back side of wafer 1 can be under after the S209, and in being now easy to afterwards the step of, die selector enters to chip
Row sorting.
It can be specifically in this step UV films in the film 7 of the lower surface of wafer 1 fitting, can also be specifically blue film, also
It can be other films 7, be not specifically limited in embodiments of the present invention.
S210：Expansion film process is carried out to wafer using film machine is expanded.
Referring to Figure 10, in this step, different MEMS chips 2 can be scattered to surrounding by expanding film machine, after convenient
Continuous sorting.Under normal circumstances, distance between two neighboring chip in expanding film machine need to control 50 μm to 200 μm it
Between.
S211：The wafer after expanding film is fixed using brilliant ring is expanded.
Referring to Figure 11, in this step, it will usually the unnecessary film 7 in the brilliant outside of ring 8 will be expanded and crossed out.In subsequent step,
The above-mentioned MEMS chip 2 isolated can be detected using optical detection apparatus, to pick out qualified MEMS chip.
S212：Qualified MEMS chip is sorted using die selector.
In this step, qualified MEMS chip can be sorted out by die selector, subsequently to be sealed
Fill work.
A kind of preparation method for specific MEMS chip that the embodiment of the present invention is provided, passes through thinned wafer 1 and two
The methods of secondary cutting, adds the yields and producing efficiency of MEMS chip 2, and then can reduce being fabricated to for MEMS chip 2
This.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be with it is other
The difference of embodiment, between each embodiment same or similar part mutually referring to.For dress disclosed in embodiment
For putting, because it is corresponded to the method disclosed in Example, so description is fairly simple, related part is referring to method part
Explanation.
Professional further appreciates that, with reference to the unit of each example of the embodiments described herein description
And algorithm steps, can be realized with electronic hardware, computer software or the combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software, the composition and step of each example are generally described according to function in the above description.These
Function is performed with hardware or software mode actually, application-specific and design constraint depending on technical scheme.Specialty
Technical staff can realize described function using distinct methods to each specific application, but this realization should not
Think beyond the scope of this invention.
Directly it can be held with reference to the step of method or algorithm that the embodiments described herein describes with hardware, processor
Capable software module, or the two combination are implemented.Software module can be placed in random access memory (RAM), internal memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Finally, it is to be noted that, herein, such as first and second or the like relational terms be used merely to by
One entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operation
Between any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant meaning
Covering including for nonexcludability, so that process, method, article or equipment including a series of elements not only include that
A little key elements, but also the other element including being not expressly set out, or also include for this process, method, article or
The intrinsic key element of equipment.In the absence of more restrictions, the key element limited by sentence "including a ...", is not arranged
Except other identical element in the process including the key element, method, article or equipment being also present.
A kind of preparation method of MEMS chip provided by the present invention is described in detail above.It is used herein
Specific case is set forth to the principle and embodiment of the present invention, and the explanation of above example is only intended to help and understands this
The method and its core concept of invention.It should be pointed out that for those skilled in the art, this hair is not being departed from
On the premise of bright principle, some improvement and modification can also be carried out to the present invention, these are improved and modification also falls into power of the present invention
In the protection domain that profit requires.
Claims (8)
1. a kind of preparation method of MEMS chip, it is characterised in that methods described includes：
Wafer is discharged, to form the working region of MEMS chip in the upper surface of the wafer；Wherein, the working region bag
Include pixel region and hidden region；
The lower surface of cover plate is bonded to the upper surface of the wafer, to cover the occlusion area；Wherein, under the cover plate
Surface sets fluted and through the cover plate first inner chamber, and the groove corresponds to the working region, under the groove
The second inner chamber that the pixel region is provided through the cover plate is corresponded in surface, the first inner chamber corresponds to the MEMS cores
Pad in piece；
In the upper table mask of the cover plate, to close the second inner chamber；
The wafer is cut from the lower surface of the wafer, so that the MEMS chip is made.
2. according to the method for claim 1, it is characterised in that the upper table mask in the cover plate includes：
UV films are pasted in the upper surface of the cover plate；
After the cutting from the lower surface of the wafer, methods described also includes：
The UV films are irradiated by UV irradiating machines, to separate the UV films.
3. according to the method for claim 2, it is characterised in that the energy of emitting ultraviolet light line during the UV irradiating machines work
Scope is：100mj/cm2To 500mj/cm2, including endpoint value.
4. according to the method for claim 1, it is characterised in that cut the wafer from the lower surface of the wafer described
Before, methods described also includes：
The wafer is thinned from the lower surface of the wafer.
5. MEMS chip according to claim 4, it is characterised in that described thinned described from the lower surface of the wafer
After wafer, the span of the thickness of the wafer is：100 μm to 500 μm, including endpoint value.
6. according to the method for claim 1, it is characterised in that described that the lower surface of cover plate is bonded to the upper of the wafer
Surface includes：
The lower surface of the cover plate is welded in the upper surface of the wafer by solder.
7. MEMS chip according to claim 6, it is characterised in that the span of the thickness of the cover plate is：200μm
To 500 μm, including endpoint value.
8. according to the method for claim 1, it is characterised in that described to cut the wafer bag from the lower surface of the wafer
Include：
The lower surface of the wafer is cut for the first time by twin shaft cutting machine, with MEMS chip described in initial gross separation；
The wafer and the cover plate are cut through by the twin shaft cutting machine for the second time, to be finally recovered the MEMS chip.
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| CN101211945A (en) * | 2006-12-29 | 2008-07-02 | 育霈科技股份有限公司 | Semiconductor image element package structure with die receiving through-hole and method of the same |
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