CN106006547B - The cutting method of MEMS wafer - Google Patents
The cutting method of MEMS wafer Download PDFInfo
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- CN106006547B CN106006547B CN201610565947.6A CN201610565947A CN106006547B CN 106006547 B CN106006547 B CN 106006547B CN 201610565947 A CN201610565947 A CN 201610565947A CN 106006547 B CN106006547 B CN 106006547B
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- mems wafer
- mems
- cutting method
- structure layer
- scribe line
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Dicing (AREA)
Abstract
The present invention provides a kind of cutting method of MEMS wafer, and the cutting method comprises the following steps：First MEMS wafer is provided；In the surface bond first structure layer of first MEMS wafer；The first scribe line and the first scribe line of cut-off through its upper and lower surface and the first stop part being made up of the first structure layer are formed on the first structure layer using photoetching process；Second MEMS wafer is provided, is bonded on the first structure layer；Cut using laser cutting parameter along the scribe line, to separate MEMS chip and false piece.Compared with correlation technique, the cutting method of MEMS wafer provided by the invention significantly reduces influence of the structure sheaf when being cut by laser in MEMS wafer inactive region to Laser Focusing, improves cutting efficiency.
Description
【Technical field】
The present invention relates to a kind of cutting technique of semiconductor devices, more particularly to a kind of cutting method of MEMS wafer.
【Background technology】
MEMS (Micro-electromechanical Systems, MEMS) technology mainly include micro mechanism,
Several parts such as microsensor, micro actuator and corresponding process circuit, it is to merge a variety of Micrometer-Nanometer Processing Technologies, and should
With the high-tech front subject to grow up on the basis of the newest fruits of modern information technologies.
The development of MEMS technology opens a brand-new technical field and industry, the micro sensing made using MEMS technology
Device, microactrator, micro partses, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. Aeronautics and Astronautics,
Suffered from automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people are touched it is very wide should
Use prospect.MEMS technology is just developing into a huge industry, is given as microelectronic industry in the past 20 years and computer industry
The great variety that the mankind bring is the same, and MEMS is also breeding the technological change at field depth quarter and producing a new round to human society
Influence.The leading products in MEMS markets are that pressure sensor, accelerometer, gyroscope, ink nozzle and hard disk drive at present
It is dynamic first-class.
MEMS element is widely used in intelligent hand from starting to be mainly used in the markets such as printer and automotive electronics till now
The consumer electronics markets such as machine, the development of MEMS industry recent five years, significantly surmounted passing 20 years it is latent during acquired by into
Achievement.But the manufacturing process of MEMS element is different from general CMOS products, because MEMS structure is extremely complex, from being designed into
Complete original shape structure, wafer manufacture, then the new challenge for all suffering from being different from traditional cmos product to subsequent encapsulating process exploitation.Institute
Become very crucial with the innovation and creation of manufacturing process.
Existing MEMS wafer includes the middle zone of action for being used to make MEMS chip and set simultaneously around zone of action
Positioned at the inactive region of MEMS wafer periphery, when the MEMS chip in zone of action is cut using laser technology,
In order to prevent generating unnecessary oxide on Cutting Road, it is required for sealing the zone of action, therefore, it is necessary in MEMS
An at least Rotating fields layer is bonded on wafer, still, this sealing means, structure sheaf is all that the MEMS wafer periphery is completely covered
Inactive region, when being cut by laser to the MEMS chip, the structure sheaf in inactive region has a strong impact on laser
Focusing, cause the inactive region of MEMS wafer periphery can not normally to cut, and then cause the MEMS close to inactive region
Chip can not also separate.
Therefore, it is necessary that providing a kind of cutting method of new MEMS wafer solves the above problems in fact.
【The content of the invention】
The technical problem that the present invention need to solve is to provide a kind of cutting method of MEMS wafer, and it is used for solving existing cutting
Method causes to have a strong impact on that laser gathers when being cut by laser because the inactive region of MEMS wafer is completely covered in structure sheaf
Jiao, so as to cause the inactive region of MEMS wafer not cut normally and can not be separated close to the MEMS chip of inactive region
Technical problem.
In order to solve the above-mentioned technical problem, the invention provides a kind of cutting method of MEMS wafer, it is characterised in that should
Cutting method comprises the following steps：
The first MEMS wafer is provided, it includes the first zone of action for making MEMS chip and lived around described first
Dynamic region is set for making the first inactive region of false piece；
In the surface bond first structure layer of first MEMS wafer；
Cutting step：The first structure layer is cut to be formed through the first scribe line of its upper and lower surface and for separating
State the first scribe line and the first stop part being made up of the first structure layer；First scribe line is by the first structure layer
It is divided into the first MEMS chips of multiple coverings first zones of action, and multiple covering first inactive region
First false piece；First stop part is located between the two neighboring false piece, to connect the two neighboring false piece；
Second MEMS wafer is provided；
Seal step：Second MEMS wafer is bonded to the first structure layer away from first MEMS wafer
On surface, second MEMS wafer is covered in above first MEMS chip and formed with first MEMS wafer and closed
Cavity；
Separating step：Described the of the cutting separation covering first MEMS chip is carried out along first scribe line
Two MEMS wafers.
Preferably, second MEMS wafer includes being used for the second zone of action of the second MEMS chip of making and around institute
The second zone of action is stated to set for making the second inactive region of the second false piece.
Preferably, also include before the sealing step：
In the structure sheaf of surface bond second of second MEMS wafer.
Preferably, second MEMS wafer passes through the first knot on second structure sheaf and first MEMS wafer
The bonding of structure layer is fixed.
Preferably, the cutting method of described MEMS wafer also includes：
Formed using photoetching process on second structure sheaf the second scribe line corresponding with first scribe line with
And corresponding first stop part is set for separating the second stop part of second scribe line.
Preferably, the first structure layer is by any one material system in monocrystalline silicon, polysilicon, silica and silicon nitride
Into.
Preferably, second structure sheaf is by any one material system in monocrystalline silicon, polysilicon, silica and silicon nitride
Into.
Preferably, between first MEMS wafer and the first structure layer and second MEMS wafer with it is described
All fixed between first structure layer by fusing Bonded Phase.
Preferably, described on second structure sheaf and first MEMS wafer in second MEMS wafer
One structure sheaf is fixed by fusing Bonded Phase.
Preferably, first stop part is additionally arranged between the two neighboring MEMS chip to connect two neighboring institute
State the first MEMS chip.
Compared with correlation technique, the cutting method of MEMS wafer provided by the invention, which significantly reduces, to be cut by laser
When MEMS wafer inactive region on influence of the structure sheaf to Laser Focusing, improve cutting efficiency.
【Brief description of the drawings】
Fig. 1 is the schematic flow sheet of the cutting method of MEMS wafer of the present invention；
Fig. 2 is the structural representation of the first MEMS wafer provided in the cutting method of MEMS wafer of the present invention；
Fig. 3 is the structural representation after the first MEMS wafer shown in Fig. 2 is bonded with first structure layer；
Fig. 4 is that the structural representation after photoetching is carried out to the first structure layer in Fig. 3；
Fig. 5 is the enlarged diagram of part A in Fig. 4；
Fig. 6 is the structural representation of part B in Fig. 5；
Fig. 7 is diagrammatic cross-sections of the Fig. 5 along I-I lines；
Fig. 8 is the first MEMS wafer, first structure layer and the 2nd MEMS that the cutting method of MEMS wafer of the present invention provides
Structural representation after wafer bonding；
Fig. 9 is the structural representation that the second MEMS wafer is bonded the second structure sheaf；
Figure 10 is brilliant for the first MEMS wafer in the cutting method of MEMS wafer of the present invention and first structure layer and the 2nd MEMS
Circle and the structural representation after the second structure sheaf photoetching；
Figure 11 be MEMS wafer of the present invention cutting method in the first MEMS wafer, first structure layer, the second structure sheaf and
Structural representation after the bonding of second MEMS wafer.
【Embodiment】
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It should be noted that the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way,
Then the component relevant with the present invention is only shown in illustrating rather than is painted according to component count, shape and the size during actual implement
System, kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its assembly layout kenel also may be used
Can be increasingly complex.
Please refer to Fig. 1 to Fig. 5, the invention provides a kind of cutting method of MEMS wafer, the cutting method includes
Following steps：
Step S1, the first MEMS wafer 1 is provided, it includes being used for the He of the first zone of action 10 for making MEMS chip 100
Set around first zone of action 10 for making the first inactive region 11 of false piece (dummy die) 110.It is described
First MEMS wafer 1 is made up of silica-base material.
Step S2, in the surface bond first structure layer 2 of first MEMS wafer 1, it is preferred that using fusion bonding
(fusion bonding), specifically as shown in figure 3, the first structure layer 2 can be sandwich construction.The first structure layer 2
In the present invention, it is preferred to be made up of any one material in monocrystalline silicon, polysilicon, silica and silicon nitride, it is used to make
Mechanical structure layer or electric structure sheaf in the MEMS chip 100.
Step S3 (cutting step), cut to be formed on the first structure layer 2 using photoetching process and run through following table thereon
First scribe line 20 and cut-off first scribe line 20 and the first stop part 21 being made up of the first structure layer 2 in face.
First scribe line 20 by first zone of action 10 be divided into it is multiple be covered on the first zone of action 10 first
MEMS chip 100, and multiple the first false pieces 110 for being covered in first inactive region 11, first stop part 21
To connect the adjacent false piece 110 between the adjacent false piece 110, specifically with reference to shown in Fig. 4 to Fig. 7.It is in fact, described
First stop part 21 can also be located at adjacent first MEMS chip 100 between with separate first MEMS chip 100 it
Between first scribe line 20.
Fig. 6 can also be clearly seen, and photoetching process is only that first scribe line is made on the first structure layer 2
20, and can't be processed in first MEMS wafer 1.
Step S4, the second MEMS wafer 3 is provided, second MEMS wafer 3 includes being used to make the second MEMS chip (not
Show) the second zone of action 30 and set around second zone of action 30 for making the second false piece (not shown)
Second inactive region 31, i.e. the second MEMS wafer 3 have the structure similar with the first MEMS wafer.
Step S5 (sealing step), second MEMS wafer 3 fusion is bonded to the first structure layer 2 away from described
On the surface of first MEMS wafer 1, second MEMS wafer 3 be covered in the top of first MEMS chip 100 and with it is described
First MEMS wafer 1 forms closed cavity, and first stop part 21 is used to stop outside air through first scribe line 20
Into the closed cavity, specifically with reference to shown in Fig. 8.So, stealthy radium-shine cutting (stealth laser are being utilized
Dicing when) technique is cut, outside air will not be entered in the closed cavity, thus, will not be at described first stroke
Unnecessary oxide is produced in film trap 20.
Refer to shown in Fig. 9 to Figure 11,, can be with root before step S5 in another preferred embodiment of the present invention
According to being actually needed, in the second structure sheaf of surface bond 4 of second MEMS wafer 3, and using photoetching process described second
Formation is set with the second scribe line 40 and corresponding first stop part 21 corresponding to first scribe line 20 on structure sheaf 4
For separating the second stop part 41 of second scribe line 40, in the case, in sealing step S5, the 2nd MEMS
The fusion of wafer 3 is bonded on surface of the first structure layer 2 away from first MEMS wafer 1, and first scribe line
20 are correspondingly bonded with the second scribe line 40, and first stop part 21 is corresponding to be bonded with the second stop part 41.
Second structure sheaf 4 in the present invention also, it is preferred that by monocrystalline silicon, polysilicon, silica and silicon nitride appoint
A kind of material of anticipating is made.Second MEMS wafer 3 passes through the in second structure sheaf 4 and first MEMS wafer 1
The fusion bonding of one structure sheaf 2 is fixed.
Step S6, cut using laser cutting parameter along first scribe line 20, to separate the first MEMS chip
100 and the first false piece 110.The cutting method of MEMS wafer provided by the invention, in the peripheral part of first MEMS wafer 1
First scribe line 20 and the first stop part 21 are set, second scribe line 40 is set in the peripheral part of second MEMS wafer 3
And second stop part 41, because the width of the first stop part 21 and the second stop part 41 is respectively well below respective peripheral part
The width of inactive region, so, when being cut by laser to inactive region, the structure of first structure layer 2 and second
Focusing of the layer 4 on laser is influenceed to significantly reduce, while first stop part 21 can be prevented in first scribe line 20 again
Air circulation, second stop part 41 can prevent the air circulation in second scribe line 40.
Compared with correlation technique, the cutting method of MEMS wafer provided by the invention passes through in MEMS wafer peripheral part
Inactive region sets scribe line and stop part, significantly reduces the inactive region described in MEMS wafer when being cut by laser
On influence of the structure sheaf to Laser Focusing, improve cutting efficiency.
Above-described is only embodiments of the present invention, it should be noted here that for one of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
Enclose.
Claims (9)
1. a kind of cutting method of MEMS wafer, it is characterised in that the cutting method comprises the following steps：
The first MEMS wafer is provided, it includes being used for the first zone of action of the first MEMS chip of making and lived around described first
Dynamic region is set for making the first inactive region of false piece；
In the surface bond first structure layer of first MEMS wafer；
Cutting step：The first structure layer is cut to be formed through the first scribe line of its upper and lower surface and for separating described the
One scribe line and the first stop part being made up of the first structure layer；First scribe line splits the first structure layer
For the first MEMS chip of multiple covering first zones of action, and the first of multiple covering first inactive region
False piece；First stop part is located between the two neighboring first false piece, to connect the two neighboring first false piece；
Second MEMS wafer is provided；
Seal step：Second MEMS wafer is bonded to surface of the first structure layer away from first MEMS wafer
On, second MEMS wafer is covered in above first MEMS chip and forms closing sky with first MEMS wafer
Chamber；
Separating step：Cut along first scribe line to separate described the second of covering first MEMS chip
MEMS wafer；
Second MEMS wafer includes being used for the second zone of action of the second MEMS chip of making and around the described second activity
Region is set for making the second inactive region of the second false piece.
2. the cutting method of MEMS wafer according to claim 1, it is characterised in that：Also wrapped before the sealing step
Include：
In the structure sheaf of surface bond second of second MEMS wafer.
3. the cutting method of MEMS wafer according to claim 2, it is characterised in that：Second MEMS wafer passes through institute
State the second structure sheaf and be bonded fixation with the first structure layer in first MEMS wafer.
4. the cutting method of MEMS wafer according to claim 2, it is characterised in that：Also include：
The second scribe line corresponding with first scribe line and right is formed on second structure sheaf using photoetching process
First stop part is answered to set for separating the second stop part of second scribe line.
5. the cutting method of MEMS wafer according to claim 4, it is characterised in that：The first structure layer is by monocrystalline
Any one material is made in silicon, polysilicon, silica and silicon nitride.
6. the cutting method of MEMS wafer according to claim 4, it is characterised in that：Second structure sheaf is by monocrystalline
Any one material is made in silicon, polysilicon, silica and silicon nitride.
7. the cutting method of MEMS wafer according to claim 3, it is characterised in that：First MEMS wafer with it is described
All fixed between first structure layer and between second MEMS wafer and the first structure layer by fusing Bonded Phase.
8. the cutting method of MEMS wafer according to claim 3, it is characterised in that：Institute in second MEMS wafer
The first structure layer stated on the second structure sheaf and first MEMS wafer is fixed by fusing Bonded Phase.
9. the cutting method of MEMS wafer according to claim 1, it is characterised in that：First stop part is additionally arranged at
To connect two neighboring first MEMS chip between the two neighboring MEMS chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610565947.6A CN106006547B (en) | 2016-07-18 | 2016-07-18 | The cutting method of MEMS wafer |
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| CN201610565947.6A CN106006547B (en) | 2016-07-18 | 2016-07-18 | The cutting method of MEMS wafer |
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| CN106006547B true CN106006547B (en) | 2017-11-21 |
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| CN110911293B (en) * | 2018-09-17 | 2021-08-17 | 上海新微技术研发中心有限公司 | Bonding structure and manufacturing method thereof |
| CN111943129B (en) * | 2019-05-16 | 2024-01-30 | 芯恩（青岛）集成电路有限公司 | MEMS wafer cutting alignment method and MEMS wafer |
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| US8816012B2 (en) * | 2010-08-18 | 2014-08-26 | Ferro Corporation | Curable acrylate based printing medium |
| JP5605258B2 (en) * | 2011-02-16 | 2014-10-15 | オムロン株式会社 | Wafer level package, chip size package device, and method for manufacturing wafer level package |
| KR102149332B1 (en) * | 2013-08-26 | 2020-08-31 | 삼성전자주식회사 | Capacitive micromachined ultrasonic transducer and method of singulating the same |
| US10306372B2 (en) * | 2014-08-26 | 2019-05-28 | Goertek Inc. | Fully wafer-level-packaged MEMS microphone and method for manufacturing the same |
| CN104860260A (en) * | 2015-04-16 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Scribing method for MEMS wafer level packaging |
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