CN104803340B - Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding - Google Patents
Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding Download PDFInfo
- Publication number
- CN104803340B CN104803340B CN201510167725.4A CN201510167725A CN104803340B CN 104803340 B CN104803340 B CN 104803340B CN 201510167725 A CN201510167725 A CN 201510167725A CN 104803340 B CN104803340 B CN 104803340B
- Authority
- CN
- China
- Prior art keywords
- optical
- mems
- glass
- silicon
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention provides a packaging structure and a packaging method of an MEMS optical chip based on silicon-glass bonding, wherein the packaging structure comprises: the first component comprises optical glass, the upper surface of the optical glass is plated with an upper optical antireflection film, the lower surface of the optical glass is provided with a cavity, the upper surface of the cavity meets the requirement of optical surface smoothness, and the upper surface of the cavity is plated with a lower optical antireflection film; a second component comprising a MEMS optical chip; the first component and the second component realize wafer-level bonding through silicon-glass bonding, and form independent sealed cavities for each MEMS optical chip. The invention can realize the wafer level packaging requirement, improve the reliability and stability of the chip, ensure the electrical property, mechanical property and optical property required by the application of the optical chip and provide a comprehensive level superior to other packaging technologies. The invention can reduce the packaging cost, improve the packaging efficiency and reduce the optical loss, and has wide application prospect in the packaging of optical communication devices and optical sensing devices.
Description
Technical field
It is special the invention belongs to MEMS (MEMS), optic communication, optical sensor, spectrum analysis, tunable laser field
It is not to be related to a kind of encapsulating structure and method for packing of the MEMS optical chips based on silicon on glass bonding.
Background technology
The MEMS chip of tunable optical function is the Primary Component in intelligent optic communication or Fibre Optical Sensor, and common includes
Optical attenuator (VOA), photoswitch, optic tunable filter etc..MEMS optical chips generally comprise movable optical micro mirror and corresponding
Microdrive, micro-structural, it requires high to clean environment degree, is typically only capable to be exposed in 1000 grades of environment purification
In air, while also more sensitive to air humidity, many MEMS optical chips can not be real due to not resolving encapsulation problem
Apply on border.Air-tight packaging is the technical problem that MEMS optical chips practical application must be solved.The scribing of MEMS optical chips
Technique is also the bottleneck technique of MEMS optical chips production, and it is common that its reason is that optical mirror plane, movable microstructure are not amenable to
Mechanical scribing or the bath of laser scribing, the white residue produced during scribing cause the failure of MEMS optical chips and reduce chip into
Product rate, the white residue cleaning amount for also considerably increasing chip even if not failing.Solving the basic method of this scribing problem is
Wafer level is carried out to MEMS optical chips before scribing hermetically sealed.
MEMS optical chips can not be directly exposed in optical package workshop due to its micro-structural, force MEMS optical devices
It is 1000 grades of purification workshops that encapsulation manufacturer, which must transform original optical package workshop, substantially increases production cost.MEMS
The level Hermetic Package requirement of package of optical device, different from common package of optical device technique, it is necessary to which manufacturer's increase air-tight packaging is special
Use equipment.And the wafer level packaging of MEMS optical chips can solve the airtight of MEMS optical chips in MEMS chip manufacturing works
Encapsulation, device photoelectric encapsulation can be completed in common optical package factory building by making the encapsulation of MEMS optical chips.
The encapsulation of current MEMS optical chips is encapsulated using semiconductor laser, the packaging technology of detector using TO
Or butterfly encapsulation, MEMS optical chips are realized into level Hermetic Package by the parallel soldering and sealing of the Can with optical window.
Airtight electrical lead is designed on its base, optical window is welded on the top of shell by glass capsulation, therefore can realize
The level Hermetic Package of MEMS optical chips, but its cost is higher.
Current MEMS package of optical device producer mainly realizes encapsulation using the method for single-chip shell+collimater, realizes gas
Sealing fills relatively difficult.Using single-chip case package, not only packaging efficiency is low, also there is the problem of thermal stress is larger.MEMS
Single, manual mode of the encapsulation of optical chip, it is impossible to mass, automated production, therefore the packaging cost of MEMS optical devices
Very high, 60%~80%, the MEMS optical-chip encapsulations efficiency and cost for accounting for MEMS optical device totle drilling costs turn into MEMS light
Key issue in device production.
In view of inefficient, the high cost of single-chip package, the wafer level packaging of MEMS is necessarily becoming for technology development
Gesture.Wafer level packaging can be realized on wafer while thousands of chip, rather than a chip are encapsulated, so that aobvious
Work reduces labour and equipment investment, is greatly enhanced packaging efficiency, and can reduce thinned back, detection and classification etc.
Processing step is there is provided more economical assembling technology procedure, and without considering die size and pin count.Wafer level packaging decapacitation is obtained
Chip size must be reduced, the number of chips of single-wafer is increased considerably and produce outside economies of scale, wafer level technology permits
Perhaps the reduction of foundation structure and single part, it is no longer necessary to lead frame, molding, rib cutting shaping, bonding die and wire welding tech technology.
At present, MEMS sensor develops Wafer-Level Packaging Technology, and the packaging cost of MEMS sensor can be greatly lowered, but
MEMS optical devices can not also realize wafer level packaging, and its main cause is that MEMS optical devices need optical window, and optical window
Material is generally using the material of the processing difficulties such as glass, and especially contact conductor is more difficult.Wafer level packaging and MEMS optics
The manufacturing process of chip is incompatible, need to consider wafer level packaging technique, encapsulating material, envelope from the whole technique of MEMS optical chips
There is bigger difficulty in the selection of dress technique.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of based on silicon on glass bonding
The encapsulating structure and method for packing of MEMS optical chips, the wafer level packaging for solving MEMS optical chips in the prior art are handed over
Difficult the problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of MEMS optics based on silicon on glass bonding
The encapsulating structure of chip, including：
First component, including optical glass, its upper surface are coated with optical anti-reflective film, and lower surface is formed with cavity, is
MEMS optical chips provide the micromirror movements space of air-tightness, and the cavity upper surface reaches optical surface smoothness requirements, and plates
It is formed with lower optical anti-reflective film；
Second component, including MEMS optical chips, the MEMS optical chips can be real in the presence of MEMS actuator
Now to the manipulation of optical signal；
The first component and second component realize Wafer level bonding by silicon on glass bonding, and are each MEMS optics
Chip forms independent seal cavity.
It is used as a kind of preferred scheme of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention, institute
MEMS optical chips are stated including body silicon substrate, activity cavity, in the activity cavity and body is fixed in by spring beam mechanism
Movable optical micro mirror on silicon substrate, the highly reflecting films positioned at the movable optical micro mirror surfaces and it is arranged at the activity
Electrode pad on the outside of cavity, wherein, the body silicon substrate between the electrode pad and activity cavity has exposed silicon face.
It is used as a kind of preferred scheme of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention, institute
The optical glass stated is the glass material for being adapted to silicon on glass bonding, and the optical glass is bonded to the exposed of the body silicon substrate
Silicon face, the leak rate of the seal cavity formed after bonding is 10-8~10-10atm·cc/s。
Further, after first component and the second component bonding, the electrode pad is located at the seal cavity
Outside.
It is used as a kind of preferred scheme of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention, institute
The optical glass stated makes in the lower surface of the electrode pad of correspondence MEMS optical chips strip cavity.
It is used as a kind of preferred scheme of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention, institute
The optical glass stated, which makes, TGV structures, and its position and the electrode pad position of MEMS optical chips are corresponded, at first
Part and second component are carried out after silicon on glass bonding, and the electrode pad of MEMS optical chips is directly led to optics by the TGV structures
The upper surface of glass.
The present invention also provides a kind of method for packing of the MEMS optical chips based on silicon on glass bonding, including step：
A) the preparation of first component：Preparing lower surface has cavity optical glass, and the thang-kng surface of the cavity reaches
The requirement of optical surface, with hard mask selectivity evaporation coating method housing surface evaporation under optical anti-reflective film, then in optical glass
The upper optical anti-reflective film of upper surface evaporation；
B) the preparation of second component：The disk for the MEMS optical chips prepared using MEMS technology；
C) silicon on glass bonding：The first component and second component are subjected to alignment keys using silicon on glass bonding technique
Close, be that each MEMS optical chips form independent seal cavity；
D) electrode is exposed：Drawn using the wide blade of scribing machine along bonding wafer scribe line on optical clear matrix
Piece is operated, and controls the scribing depth of scribing machine so that dicing operation will entirely be bonded all MEMS optical chips lists in wafer
The electrode pad exposure of member, does not scratch electrode pad；
Or removed the optical clear matrix at electrode pad using the technique that sandblasts, expose electrode pad；
E) chip is separated：Whole bonding wafers are separated into by each independent encapsulation along scribe line using the narrow blade of scribing machine
Unit.
It is used as a kind of preferred scheme of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention, institute
MEMS optical chips are stated including body silicon substrate, activity cavity, in the activity cavity and body is fixed in by spring beam mechanism
Movable optical micro mirror on silicon substrate, the highly reflecting films positioned at the movable optical micro mirror surfaces and it is arranged at the activity
Electrode pad on the outside of cavity, wherein, the body silicon substrate between the electrode pad and activity cavity has exposed silicon face.
Further, the optical glass is bonded to the exposed silicon face of the body silicon substrate, the first component and
After second component bonding, the electrode pad is located at the outside of the seal cavity.
It is used as a kind of preferred scheme of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention, step
Rapid A) in, cavity is ground out in the lower surface of the optical glass using the micromachine processing technology of glass, and to the sky
The upper surface of chamber carries out optical polish, to reach the requirement of optical surface.
Further, step A) also include step：Using machining grinding, Ultra-Violet Laser processing or sandblasting grinding work
Skill is in optical glass correspondence MEMS optical chip electrode pads lower surface processing strip cavity.
It is used as a kind of preferred scheme of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention, step
Rapid A) include step：
A-1) first optical glass is provided, is processed in the position corresponding with MEMS optical chips of first optical glass
Go out through hole；
A-2) second optical glass is provided, the first optical glass with through hole and second optical glass are entered into line unit
Close, the optical glass with cavity is formed after glass bonding.
Further, step A-2) in, first first optical glass is bonded in advance with the second optical glass, then
Under a certain pressure, annealed near the softening temperature of glass, allow the first optical glass to be bonded with the second optical glass to be
One integral material with some strength.
It is used as a kind of preferred scheme of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention, step
Rapid A) in the step of be also included in the optical glass pre-production TGV structures, position and the MEMS optical cores of the TGV structures
The electrode pad position of piece is corresponded, and after first component and second component carry out silicon on glass bonding, the TGV structures are straight
The upper surface that the electrode pad of MEMS optical chips is led to optical glass is connect, then need not carry out D) the exposed step of electrode.
It is used as a kind of preferred scheme of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention, step
Rapid A) in, the method being deposited when being coated with using hard mask of the lower optical anti-reflective film realizes the graphical of lower optical anti-reflective film,
And the size of the lower optical anti-reflective film is only slightly larger than the aperture of optics thang-kng.
As described above, the present invention provides encapsulating structure and the encapsulation of a kind of MEMS optical chips based on silicon on glass bonding
Method, the encapsulating structure includes：First component, including optical glass, its upper surface are coated with optical anti-reflective film, lower surface shape
Into there is cavity, the micromirror movements space of air-tightness is provided for MEMS optical chips, the cavity upper surface reaches that optical surface is bright and clean
Degree is required, and plating is formed with lower optical anti-reflective film；Second component, including MEMS optical chips, the MEMS optical chips are in MEMS
The manipulation to optical signal can be realized in the presence of driver；The first component and second component are real by silicon on glass bonding
Existing Wafer level bonding, and form independent seal cavity for each MEMS optical chips.Glass-encapsulated light core is used in the present invention
The structure of piece can realize wafer level packaging requirement, can improve the reliability and stability of chip, greatly reduce optics accurate
The encapsulation such as straight device are required, not only ensure that optical chip applies required electrical property, mechanical performance and optical property, and
There is provided the level of aggregation better than other encapsulation technologies.These excellent performances can Shi Guang MEMS packages manufacturer greatly reduce into
This, improves packaging efficiency, makes the light characteristic loss of chip near minimum, in the envelope of following optic communication device and photo-sensing device
Had a wide range of applications in dress.
Brief description of the drawings
Fig. 1~Fig. 2 is shown as the main view knot of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention
Structure schematic diagram.
The plan structure that Fig. 3 is shown as the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention is shown
It is intended to.
Fig. 4 is shown as the wafer level packaging of the encapsulating structure of the MEMS optical chips based on silicon on glass bonding of the present invention
Structural representation.
Fig. 5 a~Fig. 7 e are shown as each step of the method for packing of the MEMS optical chips based on silicon on glass bonding of the present invention
Suddenly the structural representation presented.
Component label instructions
101 optical glass
102 times optical anti-reflective films
Optical anti-reflective film on 103
104 cavitys
105 body silicon substrates
106 movable optical micro mirrors
107 silicon spring beam mechanisms
108 electrode pads
109 highly reflecting films
110 strip cavitys
201 are machined with the optical glass of through hole
310 TGV structures
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 1~Fig. 7 e.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, then in schema only display with relevant component in the present invention rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 1 and Fig. 3~Fig. 4, the present embodiment provides a kind of envelope of the MEMS optical chips based on silicon on glass bonding
Assembling structure, including：
First component, including optical glass 101, its upper surface are coated with optical anti-reflective film 103, and lower surface is formed with cavity
104, the micromirror movements space of air-tightness is provided for MEMS optical chips, the upper surface of cavity 104 reaches optical surface finish
It is required that, and plating is formed with lower optical anti-reflective film 102；
Second component, including MEMS optical chips, the MEMS optical chips can be real in the presence of MEMS actuator
Now to the manipulation of optical signal；
The first component and second component realize Wafer level bonding by silicon on glass bonding, and are each MEMS optics
Chip forms independent seal cavity.Specifically, the MEMS optical chips include body silicon substrate 105, activity cavity, positioned at institute
State in activity cavity and the movable optical micro mirror 106 on body silicon substrate 105 is fixed in by silicon spring beam mechanism 107, positioned at described
The highly reflecting films 109 on the surface of movable optical micro mirror 106 and the electrode pad 108 being arranged on the outside of the activity cavity, its
In, the body silicon substrate 105 between the electrode pad 108 and activity cavity has exposed silicon face.
Specifically, described optical glass 101 be adapted to silicon on glass bonding glass material, for example, Pyrex 7740,
The optical glass 101 is bonded to the exposed silicon face of the body silicon substrate 105, forms sealing ring, and the sealing ring causes
Independent seal cavity is formed between the optical glass and each MEMS optical chips.The leak rate of the seal cavity formed after bonding
For 10-8~10-10atm·cc/s.Also, after the first component and second component bonding, the electrode pad 108 is located at institute
State the outside of seal cavity.
As an example, described optical glass 101 makes in the lower surface of the electrode pad 108 of correspondence MEMS optical chips
There is strip cavity 110, the elongated cavity 104 can guarantee that MEMS optical chips in the cutting stage, and electrode pad 108 is not allowed
Easily it is scratched.
The basic functional principle of the MEMS optical chips based on silicon on glass bonding of the present embodiment is：Constitute first component
Optical glass 101 it is transparent to a range of light (1.3 μm and 1.55 μm of infrared light in such as optic communication), second
Movable optical micro mirror 106 in part realizes that (such as space is reversed, vertical minute surface translation is non-flat for a certain motion by MEMS actuator
In-plane moving etc.), incident ray is realized reflection, transmission along vertical direction or interfered, and is finally transmitted to sky by optical glass 101
In gas, so as to realize specific optical property.Cavity 104 in the optical glass 101 is provided needed for minute surface non-plane motion
Sealing space, it is achieved thereby that the encapsulation to optical chip.
Fig. 1 show the front view of the encapsulating structure of MEMS optical chips, and its overlooking structure figure is as shown in Figure 3.In addition, figure
1 and Fig. 3 is only illustrated as the encapsulating structure of 1 MEMS optical chip, however, in actual encapsulation process, the present embodiment
Encapsulating structure can be used for the wafer level packaging to MEMS optical chips, as shown in figure 4, this encapsulating structure can greatly simplify envelope
Difficulty is filled, packaging cost is reduced, the quality of encapsulation is improved, there is extremely wide application prospect in optic communication, optoelectronic areas.
As shown in Fig. 5 a~Fig. 5 f, the present embodiment also provides a kind of envelope of the MEMS optical chips based on silicon on glass bonding
Dress method, including step：
As shown in Fig. 5 a~Fig. 5 c, step 1 is carried out first), the preparation of first component：Preparing lower surface has cavity
104 optical glass 101, the thang-kng surface of the cavity reaches the requirement of optical surface, with hard mask selectivity evaporation coating method in chamber
The lower optical anti-reflective film 102 of body surface face evaporation, is then deposited optical anti-reflective film 103 in the upper surface of optical glass 101；
Specifically, this step 1) in, using the micromachine processing technology of glass in the lower surface of the optical glass 101
Cavity 104 is ground out, and optical polish is carried out to the upper surface of the cavity 104, to reach the requirement of optical surface.In addition,
In this step, in addition to step：Using machining grinding, Ultra-Violet Laser processing or sandblasting grinding process in the optics glass
The lower surface processing strip cavity 110 of the corresponding MEMS optical chips electrode pad 108 of glass 101, the strip cavity 110 can be protected
MEMS optical chips are demonstrate,proved in the cutting stage, electrode pad 108 is not easy to be scratched.
In the present embodiment, the method being deposited when being coated with using hard mask of the lower optical anti-reflective film 102 realizes lower light
The graphical of anti-reflection film 102 is learned, and the size of the lower optical anti-reflective film 102 is only slightly larger than the aperture of optics thang-kng, such as Fig. 5 c
It is shown.
As fig 5d, step 2 is then carried out), the preparation of second component：The MEMS optics prepared using MEMS technology
The disk of chip.
In the present embodiment, described MEMS optical chips include：Body silicon substrate 105, activity cavity, positioned at the activity
Cavity is interior and the movable optical micro mirror 106 on body silicon substrate 105 is fixed in by silicon spring beam mechanism 107, positioned at the movable light
The electrode pad 108 learned the highly reflecting films 109 on the surface of micro mirror 106 and be arranged on the outside of the activity cavity, wherein, it is described
Body silicon substrate 105 between electrode pad 108 and chip activity cavity has exposed silicon face.
As shown in Fig. 5 d~Fig. 5 e, step 3 is then carried out), silicon on glass bonding：By the first component and second component
Alignment bonding is carried out using silicon on glass bonding technique, is that each MEMS optical chips form independent seal cavity.
In the present embodiment, the optical glass 101 is bonded to the exposed silicon face of the body silicon substrate 105, described
After first component and second component bonding, the electrode pad 108 is located at the outside of the seal cavity.
As shown in figure 5f, step 4 is then carried out), electrode is exposed：Using the wide blade edge bonding wafer scribing of scribing machine
Groove carries out dicing operation on optical clear matrix, controls the scribing depth of scribing machine so that dicing operation will entirely be bonded crystalline substance
The electrode pad 108 of all MEMS optical chips units exposes in disk, does not scratch electrode pad 108；
Or removed the optical clear matrix at electrode pad 108 using the technique that sandblasts, expose electrode pad 108.
In the present embodiment, carried out using the wide blade of scribing machine along bonding wafer scribe line on optical glass 101
Dicing operation, controls the scribing depth of scribing machine so that dicing operation will entirely be bonded all MEMS optical chips in wafer
The electrode pad 108 of unit exposes, due to the presence of cavity 104 in optical glass 101, therefore, it can easily control wide knife
Piece does not scratch electrode pad 108.
As shown in figure 5f, step 5 is finally carried out), chip separation：To entirely it be bonded along scribe line using the narrow blade of scribing machine
Disk is separated into each independent encapsulation unit.
In the present embodiment, designed good bonding wafer scribe line when chip separation still uses electrode exposed, and
It need not redesign.Specifically, wafer scribe line scribing, depth are bonded still along designed when carrying out chip separation
The upper thickness to be adjusted to whole bonding wafer, finally gives the good MEMS optical chip units of single package.
Embodiment 2
As shown in Fig. 1 and Fig. 3~Fig. 4, the present embodiment provides a kind of envelope of the MEMS optical chips based on silicon on glass bonding
Assembling structure, its basic structure as described in Example 1, wherein, the optical glass 101 with cavity 104 be by two optics
Glass bonding is formed, and it includes the first optical glass 102 and that position corresponding with MEMS optical chips is machined with through hole
Two optical glass 101, then bond together to form the optical glass with cavity 104 by the two optical glass.
As shown in Fig. 6 a~Fig. 6 g, the present embodiment also provides a kind of envelope of the MEMS optical chips based on silicon on glass bonding
Dress method, its basic step such as embodiment 1, wherein, as shown in Fig. 6 a~Fig. 6 c, step 1) include step：
As shown in Figure 6 b, step 1-1 is carried out first) there is provided the first optical glass 102, in first optical glass 102
Position corresponding with MEMS optical chips process through hole；
As shown in Fig. 6 a~Fig. 6 c, step 1-2 is then carried out) there is provided the second optical glass 101, by the with through hole
One optical glass 102 is bonded with second optical glass 101, and the optical glass with cavity 104 is formed after glass bonding.
In addition, above-mentioned steps 3-2) in, first first optical glass is bonded in advance with the second optical glass, then
Under a certain pressure, annealed near the softening temperature of glass, allow the first optical glass to be bonded with the second optical glass to be
One overall glass material with some strength.
It should be noted that this step is when the first optical glass producing goes out through hole, implementation can also be processed simultaneously
The structure of strip cavity 110 described in example 1, to save processing step.
Embodiment 3
As shown in Figure 2 to 4, the present embodiment provides a kind of encapsulation knot of the MEMS optical chips based on silicon on glass bonding
Structure, its basic structure such as embodiment 1, wherein, pre-production has TGV structures 310 in the optical glass, its position and MEMS light
The position of electrode pad 108 for learning chip is corresponded, after first component and second component carry out silicon on glass bonding, the TGV
Structure 310 directly leads to the electrode pad 108 of MEMS optical chips the upper surface of optical glass.
As shown in Fig. 7 a~Fig. 7 e, the present embodiment also provides a kind of envelope of the MEMS optical chips based on silicon on glass bonding
Dress method, its basic step such as embodiment 1, wherein, as shown in Figure 7b, step 1) in also include：It is advance in the optical glass
The step of making TGV structure 310, the position of the TGV structures 310 and the position of electrode pad 108 of MEMS optical chips are one by one
Correspondence, after first component and second component carry out silicon on glass bonding, the TGV structures 310 are directly by MEMS optical chips
Electrode pad 108 leads to the upper surface of optical glass, equivalent to directly electrode pad 108 is drawn, therefore, using the present embodiment
In method need not then carry out step 4 in embodiment 1) electrode is exposed and the step of process strip cavity 110, and
Step 5 can be directly over) in chip separating step, whole bonding wafers are separated along scribe line using the narrow blade of scribing machine
Into each independent encapsulation unit.
As described above, the present invention provides encapsulating structure and the encapsulation of a kind of MEMS optical chips based on silicon on glass bonding
Method, the encapsulating structure includes：First component, including optical glass, its upper surface are coated with optical anti-reflective film 103, following table
Face is formed with cavity 104, and the micromirror movements space of air-tightness is provided for MEMS optical chips, and the upper surface of cavity 104 reaches
Optical surface smoothness requirements, and plating is formed with lower optical anti-reflective film 102；Second component, including MEMS optical chips, the MEMS light
The manipulation to optical signal can be realized in the presence of MEMS actuator by learning chip；The first component and second component pass through
Silicon on glass bonding realizes Wafer level bonding, and forms independent seal cavity for each MEMS optical chips.Used in the present invention
The structure of glass-encapsulated optical chip can realize wafer level packaging requirement, can improve the reliability and stability of chip, greatly
The encapsulation such as ground reduction optics collimator are required, not only ensure that optical chip applies required electrical property, mechanical performance and heat
Performance, and also provide the level of aggregation better than other encapsulation technologies.These excellent performances can Shi Guang MEMS packages manufacturer
Cost is greatly reduced, packaging efficiency is improved, makes the light characteristic loss of chip near minimum, in following optic communication device and light
Had a wide range of applications in the encapsulation of senser element.So, the present invention effectively overcomes various shortcoming of the prior art
And have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of encapsulating structure of the MEMS optical chips based on silicon on glass bonding, it is characterised in that including：
First component, including optical glass, its upper surface are coated with optical anti-reflective film, and lower surface is formed with cavity, are MEMS light
The micromirror movements space that chip provides air-tightness is learned, the cavity upper surface reaches optical surface smoothness requirements, and plating is formed with down
Optical anti-reflective film；
Second component, including MEMS optical chips, the MEMS optical chips can be realized pair in the presence of MEMS actuator
The manipulation of optical signal, the MEMS optical chips include body silicon substrate, activity cavity, in the activity cavity and by elasticity
Beam mechanism is fixed in the movable optical micro mirror on body silicon substrate；
The first component and second component realize Wafer level bonding by silicon on glass bonding, and are each MEMS optical chips
Form independent seal cavity；Described optical glass, which makes, TGV structures, its position and the electrode pad of MEMS optical chips
Position is corresponded, and after first component and second component carry out silicon on glass bonding, the TGV structures are directly by MEMS optics
The electrode pad of chip leads to the upper surface of optical glass.
2. the encapsulating structure of the MEMS optical chips according to claim 1 based on silicon on glass bonding, it is characterised in that：
The MEMS optical chips are fixed in including body silicon substrate, activity cavity, in the activity cavity and by spring beam mechanism
Movable optical micro mirror on body silicon substrate, the highly reflecting films positioned at the movable optical micro mirror surfaces and it is arranged at the work
Electrode pad on the outside of dynamic cavity, wherein, the body silicon substrate between the electrode pad and activity cavity has exposed silicon table
Face.
3. the encapsulating structure of the MEMS optical chips according to claim 2 based on silicon on glass bonding, it is characterised in that：
Described optical glass is the glass material for being adapted to silicon on glass bonding, and the optical glass is bonded to the naked of the body silicon substrate
The leak rate of the seal cavity formed after the silicon face of dew, bonding is 10-8~10-10atm·cc/s。
4. the encapsulating structure of the MEMS optical chips according to claim 3 based on silicon on glass bonding, it is characterised in that：
After first component and the second component bonding, the electrode pad is located at the outside of the seal cavity.
5. a kind of method for packing of the MEMS optical chips based on silicon on glass bonding, it is characterised in that including step：
A) the preparation of first component：Preparing lower surface has the optical glass of cavity, and the thang-kng surface of the cavity reaches light
The requirement in face, with hard mask selectivity evaporation coating method housing surface evaporation under optical anti-reflective film, then in optical glass
The upper optical anti-reflective film of upper surface evaporation；
B) the preparation of second component：The disk for the MEMS optical chips prepared using MEMS technology, the MEMS optical chips
It is fixed in including body silicon substrate, activity cavity, in the activity cavity and by spring beam mechanism movable on body silicon substrate
Optical micromirror；
C) silicon on glass bonding：The first component and second component are subjected to alignment bonding using silicon on glass bonding technique, are
Each MEMS optical chips form independent seal cavity；
E) chip is separated：Whole bonding wafers are separated into by each independent encapsulation list along scribe line using the narrow blade of scribing machine
Member；
Step A) in the step of be also included in the optical glass pre-production TGV structures, the position of the TGV structures and MEMS
The electrode pad position of optical chip is corresponded, after first component and second component carry out silicon on glass bonding, the TGV
Structure directly leads to the electrode pad of MEMS optical chips the upper surface of optical glass.
6. the method for packing of the MEMS optical chips according to claim 5 based on silicon on glass bonding, it is characterised in that：
The MEMS optical chips are fixed in including body silicon substrate, activity cavity, in the activity cavity and by spring beam mechanism
Movable optical micro mirror on body silicon substrate, the highly reflecting films positioned at the movable optical micro mirror surfaces and it is arranged at the work
Electrode pad on the outside of dynamic cavity, wherein, the body silicon substrate between the electrode pad and activity cavity has exposed silicon table
Face.
7. the method for packing of the MEMS optical chips according to claim 6 based on silicon on glass bonding, it is characterised in that：
The optical glass is bonded to the exposed silicon face of the body silicon substrate, after first component and the second component bonding, institute
State the outside that electrode pad is located at the seal cavity.
8. the method for packing of the MEMS optical chips according to claim 5 based on silicon on glass bonding, it is characterised in that：
Step A) in, the method being deposited when being coated with using hard mask of the lower optical anti-reflective film realizes the figure of lower optical anti-reflective film
Change, and the size of the lower optical anti-reflective film is only slightly larger than the aperture of optics thang-kng.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167725.4A CN104803340B (en) | 2015-04-09 | 2015-04-09 | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167725.4A CN104803340B (en) | 2015-04-09 | 2015-04-09 | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104803340A CN104803340A (en) | 2015-07-29 |
| CN104803340B true CN104803340B (en) | 2017-09-15 |
Family
ID=53688617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510167725.4A Active CN104803340B (en) | 2015-04-09 | 2015-04-09 | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104803340B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569154B (en) * | 2016-11-15 | 2019-02-19 | 上海交通大学 | A kind of three axis fluxgate sensors |
| CN107555398A (en) * | 2017-07-17 | 2018-01-09 | 西北工业大学 | A kind of MEMS technology new method for improving process for sapphire-based F P bottom of chamber portion surface quality |
| CN108594428B (en) * | 2018-04-16 | 2020-06-05 | 西安知微传感技术有限公司 | MEMS micro-vibrating mirror and manufacturing method for prefabricating MEMS micro-vibrating mirror based on SOI top layer silicon |
| CN111367072A (en) * | 2020-04-24 | 2020-07-03 | 罕王微电子（辽宁）有限公司 | Electromagnetic micro-mirror structure and preparation method thereof |
| CN116632507B (en) * | 2023-07-21 | 2023-10-10 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060022561A (en) * | 2004-09-07 | 2006-03-10 | 엘지전자 주식회사 | Pzoelectric rf mems switch using wafer unit packaging and microfabrication technology and fabrication method thereof |
| US7393758B2 (en) * | 2005-11-03 | 2008-07-01 | Maxim Integrated Products, Inc. | Wafer level packaging process |
| DE102007034888B3 (en) * | 2007-07-16 | 2009-01-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Microsystem and method of manufacturing a microsystem |
| JP5497476B2 (en) * | 2010-02-25 | 2014-05-21 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging device |
| JP6260080B2 (en) * | 2013-01-07 | 2018-01-17 | セイコーエプソン株式会社 | Wavelength variable interference filter, method for manufacturing wavelength variable interference filter, optical module, and electronic device |
| CN103224219A (en) * | 2013-04-02 | 2013-07-31 | 厦门大学 | Integration method of nanometer getter used for micro-device wafer level packaging |
| CN104445046B (en) * | 2014-06-24 | 2016-05-18 | 华天科技（昆山）电子有限公司 | Novel wafer level MEMS chip-packaging structure and method for packing thereof |
| CN104078479B (en) * | 2014-07-21 | 2017-03-15 | 格科微电子（上海）有限公司 | The wafer-level packaging method of imageing sensor and image sensor package structure |
-
2015
- 2015-04-09 CN CN201510167725.4A patent/CN104803340B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104803340A (en) | 2015-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104803340B (en) | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding | |
| US7303645B2 (en) | Method and system for hermetically sealing packages for optics | |
| CN101675498B (en) | Method and system for flip chip packaging of micro-mirror devices | |
| US7226810B2 (en) | MEMS device wafer-level package | |
| CN102636828B (en) | Variable-wavelength interference filter and manufacture method, optical module, light analytical equipment | |
| US20050184304A1 (en) | Large cavity wafer-level package for MEMS | |
| KR20090105933A (en) | Housing for micro-mechanical and micro-optical components used in mobile applications | |
| US20060281227A1 (en) | Bond method and structure using selective application of spin on glass | |
| KR20150082363A (en) | Integrated bondline spacers for wafer level packaged circuit devices | |
| US7141870B2 (en) | Apparatus for micro-electro mechanical system package | |
| CN104909327B (en) | Packaging structure and packaging method of MEMS optical chip based on interlayer bonding | |
| US7510947B2 (en) | Method for wafer level packaging and fabricating cap structures | |
| US20080213937A1 (en) | Method of fabricating optical device caps | |
| US7709940B2 (en) | Micro device encapsulation | |
| US20200385264A1 (en) | Generating a mems device with glass cover and mems device | |
| CN101221911B (en) | Packaging micro devices | |
| CN102701142B (en) | Wafer-integrated micro-lens optical system manufacturing method and apparatus structure | |
| CN104124183A (en) | Device and method for analyzing failures of TSV (through silicon via) wafer level packaged MEMS (micro-electro-mechanical systems) chips | |
| Stenchly et al. | Hermetic packaging concept for laser diodes on wafer level | |
| CN203983239U (en) | The failure analysis device of TSV wafer-level package of MEMS chip | |
| GB2443352A (en) | Hermetically sealed wafer level packaging for optical MEMS devices | |
| GB2443573A (en) | Hermetically sealed optoelectronic MEMS wafer level package | |
| GB2439403A (en) | Hermetically sealed wafer level packaging for optical MEMS devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200303 Address after: 233010 3rd floor, building 2, Guanyi building, Yuhui District, Bengbu City, Anhui Province Patentee after: Anhui zhongkemi Microelectronics Technology Co.,Ltd. Address before: 201800 Shanghai City, Jiading District new area, Pingcheng Road No. 811 room 12141 Patentee before: Shanghai Industrial UTechnology Research Institute |
|
| TR01 | Transfer of patent right |