CN103224219A - Integration method of nanometer getter used for micro-device wafer level packaging - Google Patents
Integration method of nanometer getter used for micro-device wafer level packaging Download PDFInfo
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- CN103224219A CN103224219A CN2013101122656A CN201310112265A CN103224219A CN 103224219 A CN103224219 A CN 103224219A CN 2013101122656 A CN2013101122656 A CN 2013101122656A CN 201310112265 A CN201310112265 A CN 201310112265A CN 103224219 A CN103224219 A CN 103224219A
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Abstract
An integration method of a nanometer getter used for a micro-device wafer-level packaging relates to the integration method of the getter. The method comprises processing a sinking groove and a movable structure on a silicon/glass bonding composite sheet, processing a oriented carbon nanotube structure on a front surface of a silicon sheet, printing a glass slurry structure in pattern on a front surface of a glass sheet, putting the silicon sheet and the glass sheet into a bonding machine in a way of facing front surfaces of the two, heating to a sintering temperature enabling softening of the glass slurry structure, controlling a space between the silicon sheet and the glass sheet so that an upper part of the carbon nanotube structure is contacted with the glass slurry structure, cooling, separating the silicon sheet and the glass sheet, so that the oriented carbon nanotube structure is pasted to the glass sheet; depositing a getter film on the oriented carbon nanotube structure to obtain a getter structure; aligning the silicon/glass bonding composite sheet with the glass sheet in the bonding machine so that the oriented carbon nanotube structure is placed in a sinking groove, and bonding the silicon/glass bonding composite sheet and the glass sheet under vacuum, thereby forming MEMS devices with vacuum degrees.
Description
Technical field
The present invention relates to a kind of integrated approach of getter, especially relate to a kind of Nano getter integrated approach that is used for the micro element wafer level packaging.
Background technology
MEMS (MEMS) sensor is gyroscope, accelerometer, pressure sensor etc. for example, has been widely used in people's the production and life.The Vacuum Package of MEMS device is a kind of encapsulation technology that adopts seal chamber that the high-air-tightness environment is provided, and the performance of sensor and antijamming capability are significantly promoted, thus the MEMS sensor be encapsulated into a critical process.
At present, with regard to the MEMS packaged type, can be divided into two big classes, wafer level packaging and wafer-level package, wherein the relative wafer-level package of wafer level packaging all has greatly improved at aspects such as efficient, yield rate and reliabilities, so wafer level packaging is the main flow trend of sensor package.But the MEMS device after the encapsulation, chamber internal gas pressure can increase during than packaging technology, and main cause is from two, and a class is that extraneous gas enters cavity by the microcrack that encapsulation produces; Another kind of is the gas that cavity inside produces.At first kind problem, can effectively solve by advanced person's bonding technology at present, for example anode linkage technology, silocon-silicon linkage technology, glass paste bonding techniques etc.Under the prerequisite that first kind problem solves, the gas that second class is produced by chamber interior just becomes the main cause that restriction wafer level packaging vacuum improves, internal gas has two kinds of sources main: a part is the gas that technology directly produces in the encapsulation process, as the oxygen that discharges in the anode linkage encapsulation process, the steam that discharges in the Si-Si bonding encapsulation process, the organic gas that volatilizees in the glass paste bonding encapsulation process; Another part is that the gas that is adsorbed on material surface in the chamber is heated back release, is mainly steam (S.H.Choa, Reliability of vacuum packaged MEMS gyroscopes, Microelectronics Reliability.).This shows, second class is that the gas that chamber interior produces is inevitable in encapsulation process, therefore for the MEMS sensor that needs the condition of high vacuum degree encapsulation, the integrated getter technology of chamber interior is particularly important processing step to improving and remaining potted vacuum.
In the traditional round chip level encapsulation process, mainly use sputtering method that the Ti metallic film is integrated in sensor vacuum chamber inside as MEMS structure getter.This scheme preparation is simple, and can not cause wafer contamination.But be subjected to the less restriction of sputtered film surface area, single metal Ti inspiratory capacity is lower, therefore not high (the Moon Chul Lee of vacuum that can keep, A high yield rate MEMS gyroscope with a packaged SiOG process, J.Micromech.Microeng.).
At present, getter is just towards new material, the development of new construction aspect, thus the getter of be born some NEW TYPE OF COMPOSITE non-evaporables, the saturating rate in high hole, bigger serface and Nano grade.Be exactly a class in the novel getter process wherein based on the method for preparing Nano getter (Chinese patent CN1915798A) of CNT substrate.This method is low at existing getter gettering efficiency, vacuum is kept shortcomings such as not high, time is long, propose a kind of on CNT sputter getter metal Ti, significantly improve the gettering rate of getter by the bigger serface of CNT.But CNT patterning preparation temperature is higher in this method, meeting polluting wafer periphery in the process of preparation, and pollutant can't clean, therefore can not compatible follow-up wafer level bonding packaging technology, in addition, because gettering material still is single metal, can cause inspiratory capacity lower equally, therefore be not widely applied to yet in the MEMS wafer level packaging technology.
Summary of the invention
The objective of the invention is in the existing method for preparing Nano getter based on the CNT substrate, substrate must be high temperature resistant, easily pollute on the surface, problems such as single metal getter efficient is low, provide can with the integrated a kind of Nano getter integrated approach that is used for the micro element wafer level packaging of MEMS wafer level packaging technology.
The present invention includes following steps:
1) deep gouge and movable structure under processing on the silicon/glass bonding compounded plate;
2) process the aligned carbon nanotube structure in the silicon chip front;
3) in sheet glass front patterning printed glass grout structure, with silicon chip with in the sheet glass front is opposite to the bonding machine mutually, be heated to the sintering temperature that makes the glass paste structure softening, distance between control silicon chip and the sheet glass, the upper part of aligned carbon nanotube structure is contacted with the glass paste structure, separate silicon chip and sheet glass after being cooled to room temperature, realize that the aligned carbon nanotube structure affixes on the sheet glass;
4) on the aligned carbon nanotube structure, deposit Fe Getter Films Prepared, obtain the getter structure;
5) with silicon/glass bonding compounded plate with aim in sheet glass places the bonding machine, the aligned carbon nanotube structure is placed down in the deep gouge, under vacuum condition, silicon/glass bonding compounded plate and sheet glass are bonded together, form MEMS device with vacuum.
In step 1), described under processing on the silicon/glass bonding compounded plate deep gouge and movable structure can adopt bulk silicon process.
In step 2) in, describedly processing the aligned carbon nanotube structure in the silicon chip front and can adopt micro fabrication, concrete steps are as follows: silicon chip is positive by sputter Al
2O
3With the Fe film as catalyst, adopt the whole long aligned carbon nanotube structure of looking unfamiliar of plasma chemical vapor phase growth (PECVD) technology.
In step 3), describedly can adopt method for printing screen in sheet glass front patterning printed glass grout structure; Described sheet glass can adopt the Pyrex7740 sheet glass; The thermal coefficient of expansion of described glass paste structure is selected close with sheet glass, to reduce the thermal stress in the technology; The sintering temperature of described glass paste structure is lower than 821 ℃ of glass transition temperatures, and is higher than the anode linkage temperature.
In step 4), the described Fe Getter Films Prepared that deposits on the aligned carbon nanotube structure can adopt the sputter mode.
In step 5), described silicon/glass bonding compounded plate and sheet glass are bonded together can be adopted the anode linkage method.
Most critical of the present invention be the transfer of aligned carbon nanotube structure, silicon chip and sheet glass front are opposite in the bonding machine mutually, be heated to the sintering temperature of slurry, spacing distance by control silicon chip and sheet glass with contact pressure and contact with the glass paste structure with assurance aligned carbon nanotube fore-end, silicon/glass bonding compounded plate and sheet glass are separated in cooling back, stick to the structural aligned carbon nanotube of glass paste and are transferred on the sheet glass thereby make;
The present invention adopts hard mask to stop, only guarantee that the sputter composition is the getter structure of Ti/Zr/V alloy on aligned carbon nanotube, and getter structure activationary temperature is selected with the anode linkage temperature approaching;
Silicon/glass bonding compounded plate of the present invention places the bonding machine to aim at sheet glass, the aligned carbon nanotube that deposits the getter structure is placed in the following deep gouge of silicon/glass bonding compounded plate, under the condition of vacuum, adopt the anode linkage technology to make silicon/glass bonding compounded plate and sheet glass bonding, realize the sealing of vacuum chamber, because bonding temperature and activationary temperature are approaching, the getter structure directly intensifies in encapsulation process, thereby has air-breathing function simultaneously.
Beneficial effect of the present invention is: Nano getter technology integrating method in the MEMS wafer level packaging, widened the scope of application on different base of Nano getter, the cleanliness factor that has kept package substrates, improved the adhesiveness of Nano getter, and can realize that in potting process getter directly activates, and has simplified processing step.
Description of drawings
Fig. 1 processes a kind of embodiment movable and following deep gouge structure on the silicon/glass compounded plate.
Fig. 2 is a kind of embodiment in silicon chip processing aligned carbon nanotube structure.
Fig. 3 is a kind of embodiment in sheet glass processed glass grout structure.
Fig. 4 shifts a kind of embodiment of aligned carbon nanotube structure for sheet glass.
Fig. 5 is a kind of embodiment of processing getter structure on sheet glass.
Fig. 6 is the cutaway view of wafer level packaging after finishing.
In Fig. 1～6, respectively be labeled as: 1 movable structure; 2 times deep gouges; 3 aligned carbon nanotubes; 4 glass pastes; 5 Fe Getter Films Prepared; 01 silicon/glass compounded plate; 02 silicon chip; 03 glass.
The specific embodiment
Following examples will the invention will be further described in conjunction with the accompanying drawings.
With reference to figure 1, on silicon/glass bonding compounded plate 01, process deep gouge structure 1 under the MEMS by bulk silicon process, movable structure 2, submergence depth are 120 μ m;
With reference to figure 2, by sputtering technology at positive whole the deposition aligned carbon nanotube of the silicon chip 02 required catalyst A l that grows
2O
3Film 10nm and Fe film 1nm; Using plasma chemical vapor deposition method (PECVD), feeding flow is the C of 20sccm
2H
2Gas, at the growing oriented carbon nano tube structure 3 of catalyst surface, growing height is 50 μ m;
With reference to figure 3, sheet glass 03 is selected the Pyrex7740 sheet glass, adopts screen printing technique in described sheet glass 03 front surface coated one deck glass paste structure 4, and thickness is 30 μ m.Wherein the Coefficient of Thermal Expansion value of glass paste is chosen as 3.2, and the slurry sintering temperature is chosen as 500 ℃;
With reference to figure 4, silicon chip 02 is opposite in the bonding machine mutually with sheet glass 03 front, be heated to 500 ℃ of sintering temperatures, regulate the distance that contacts of described silicon chip 02 and sheet glass 03, control makes the about 20 μ m in upper part of the described glass paste structure 4 adhesion aligned carbon nanotube structures 3 on the described sheet glass 03 between the two apart from being 60 μ m, is cooled to room temperature, separate silicon chip 02 and sheet glass 03, thereby aligned carbon nanotube structure 3 is transferred on the sheet glass 03;
With reference to figure 5, adopt hard mask version as the barrier layer, only guarantee that the sputtering sedimentation composition is the getter structure 5 of Ti/Zr/V alloy on the aligned carbon nanotube structure 3 of sheet glass 03 transferring to, the Ti/Zr/V alloying component is according to 400 ℃ of selections of pumping property activationary temperature, and getter structure 5 thickness are 1 μ m;
With reference to figure 6, silicon/glass bonding compounded plate 01 is positioned in the bonding machine with sheet glass 03 aims at, the aligned carbon nanotube 3 that deposits getter structure 5 is placed in the following deep gouge 1 of silicon/glass bonding compounded plate 01, be evacuated to 10
-2Pa, and be heated to 400 ℃, make and adopt anode linkage to make silicon/glass bonding compounded plate 01 and sheet glass 03 bonding, and while activated degasser pumping property, final Nano getter technology integrated in the disk encapsulation of realizing makes the vacuum in the packaging remain on a higher order of magnitude for a long time.
Most critical of the present invention be the transfer of aligned carbon nanotube structure 3, silicon chip 02 is opposite in the bonding machine mutually with sheet glass 03 front, be heated to the sintering temperature of slurry, spacing distance by control silicon chip 02 and sheet glass 03 with contact pressure and contact with glass paste structure 4 with assurance aligned carbon nanotube 3 fore-ends, silicon/glass bonding compounded plate 01 and sheet glass 03 are separated in the cooling back, thereby the aligned carbon nanotube 3 that sticks on the glass paste structure 4 is transferred on the sheet glass 03.
The degree of depth of the following deep gouge 1 on the silicon/glass compounded plate 01 of the present invention is greater than the aligned carbon nanotube 3 and glass paste 4 thickness sums of sheet glass 03 upper process.
Claims (9)
1. Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that may further comprise the steps:
1) deep gouge and movable structure under processing on the silicon/glass bonding compounded plate;
2) process the aligned carbon nanotube structure in the silicon chip front;
3) in sheet glass front patterning printed glass grout structure, with silicon chip with in the sheet glass front is opposite to the bonding machine mutually, be heated to the sintering temperature that makes the glass paste structure softening, distance between control silicon chip and the sheet glass, the upper part of aligned carbon nanotube structure is contacted with the glass paste structure, separate silicon chip and sheet glass after being cooled to room temperature, realize that the aligned carbon nanotube structure affixes on the sheet glass;
4) on the aligned carbon nanotube structure, deposit Fe Getter Films Prepared, obtain the getter structure;
5) with silicon/glass bonding compounded plate with aim in sheet glass places the bonding machine, the aligned carbon nanotube structure is placed down in the deep gouge, under vacuum condition, silicon/glass bonding compounded plate and sheet glass are bonded together, form MEMS device with vacuum.
2. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 1), described under processing on the silicon/glass bonding compounded plate deep gouge and movable structure adopt bulk silicon process.
3. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 2) in, the described aligned carbon nanotube structure that processes in the silicon chip front adopts micro fabrication.
4. as a kind of Nano getter integrated approach that is used for the micro element wafer level packaging as described in the claim 3, it is characterized in that the described aligned carbon nanotube structure that processes in the silicon chip front adopts the concrete steps of micro fabrication as follows: silicon chip is positive by sputter Al
2O
3With the Fe film as catalyst, adopt the whole long aligned carbon nanotube structure of looking unfamiliar of plasma chemical vapor phase growth (PECVD) technology.
5. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 3), and is described at sheet glass front patterning printed glass grout structure employing method for printing screen.
6. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 3), and described sheet glass adopts the Pyrex7740 sheet glass.
7. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 3), and the thermal coefficient of expansion of described glass paste structure is selected close with sheet glass; The sintering temperature of described glass paste structure is lower than 821 ℃ of glass transition temperatures, and is higher than the anode linkage temperature.
8. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 4), and the described Fe Getter Films Prepared that deposits on the aligned carbon nanotube structure adopts the sputter mode.
9. a kind of according to claim 1 Nano getter integrated approach that is used for the micro element wafer level packaging is characterized in that in step 5), and described silicon/glass bonding compounded plate and sheet glass are bonded together adopted the anode linkage method.
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Cited By (3)
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| CN104803340A (en) * | 2015-04-09 | 2015-07-29 | 上海新微技术研发中心有限公司 | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding |
| CN106498219A (en) * | 2016-10-21 | 2017-03-15 | 周荣 | A kind of preparation method of CNT skeleton getter |
| CN109734046A (en) * | 2018-12-26 | 2019-05-10 | 中国科学院上海微系统与信息技术研究所 | A kind of vacuum encapsulation process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104803340A (en) * | 2015-04-09 | 2015-07-29 | 上海新微技术研发中心有限公司 | Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding |
| CN106498219A (en) * | 2016-10-21 | 2017-03-15 | 周荣 | A kind of preparation method of CNT skeleton getter |
| CN109734046A (en) * | 2018-12-26 | 2019-05-10 | 中国科学院上海微系统与信息技术研究所 | A kind of vacuum encapsulation process |
| CN109734046B (en) * | 2018-12-26 | 2021-05-14 | 中国科学院上海微系统与信息技术研究所 | Vacuum packaging process |
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Application publication date: 20130731 |