CN103888887A - Method for cutting MEMS microphone chips - Google Patents
Method for cutting MEMS microphone chips Download PDFInfo
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- CN103888887A CN103888887A CN201410118106.1A CN201410118106A CN103888887A CN 103888887 A CN103888887 A CN 103888887A CN 201410118106 A CN201410118106 A CN 201410118106A CN 103888887 A CN103888887 A CN 103888887A
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- mems microphone
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Abstract
The invention discloses a method for cutting MEMS microphone chips. Each chip comprises a substrate with a through hole and a plane-parallel capacitor, wherein each plane-parallel capacitor is arranged above the corresponding through hole and is formed by a vibrating membrane and a back electrode. The method for cutting the MEMS microphone chips comprises the steps that lower lay membranes are attached to the lower portions of the substrates, upper layer membranes are arranged above the vibrating membranes at certain intervals, and the upper layer membranes are UV membranes; an MEMS microphone wafer is cut through a water jet scalpel to form the MEMS microphone chips in a separation mode; the upper layer membranes are removed through ultraviolet irradiation. The MEMS microphone chips can be prevented from being polluted in the cutting process through the method.
Description
Technical field
The present invention relates to MEMS microphone package technical field, particularly a kind of MEMS microphone cutting method.
Background technology
Along with social progress and the development of technology, utilizing MEMS(MEMS (micro electro mechanical system)) the integrated MEMS microphone of technique starts to be applied in batches in the electronic product such as mobile phone, notebook.This MEMS microphone is compared with traditional EMC (staying collective) microphone, and volume is less, and sealing property is better, and reliability is higher.Along with the volume of Intelligent mobile equipment constantly reduces and performance and consistency raising, require also more and more tighter to the encapsulation of MEMS microphone.
A core devices of MEMS microphone is MEMS microphone chip, and this chip can complete the conversion between physical sound and signal of telecommunication frequency.Accompanying drawing 1 is a kind of microphone chip structure of routine, and it comprises the through hole (cavity) 102 that is formed with up/down perforation in silicon substrate 101, substrate 101; Substrate 101 tops arrange a plane-parallel capacitor being made up of back electrode 103, vibrating membrane 104, and vibrating membrane is affected by frequency of outside sound to vibrate, parallel plate capacitor value is changed, and produce the signal of telecommunication, realize acoustic-electric translation function; Above substrate 101, also there is one deck silicon nitride material 105, fixing to play, to protect vibrating membrane 103 effect.
General microphone chip is produced on Silicon Wafer, and a Silicon Wafer has thousands of chips even up to ten thousand, need to microphone chip be separated into separate microphone chip by scribing.Due to the limitation of manufacturing process, the scribing of existing MEMS Mike wafer generally adopts radium-shine cutting mode.Fig. 2 is the wafer of a MEMS microphone chip after conventional processing, need to be along Cutting Road (dotted line) thus 201 scribings these microphone chips 202 are separated.Radium-shine cutting adopts laser penetration technology, and average every 15-20um can produce a penetration layer deeply, and the wafer that is 500um for a thickness needs to produce approximately 30 layers of penetration layer.This process is comparatively time-consuming, is equivalent to scan a wafer 30 times, and efficiency is very low.And because radium-shine cutting is very sensitive to the light of metallic reflection, therefore in wafer for the PCM(pulse code modulation of chip circuit and performance test) structure 203 can only be manufactured in each chip unit, the position that has taken a part of script and place MEMS microphone chip.In addition, on Cutting Road, cannot place any structure.
Another kind of conventional scribing mode is the scribing of water cutter, the method is with low cost, be used in most chip scribing, but the method need to be rinsed with the water of large pressure in cutting crystal wafer, for conventional MEMS microphone chip, vibrating membrane extremely fragility is easily damaged, and easily contaminated.
Summary of the invention
The object of the present invention is to provide one can realize the scribing of water cutter, and ensure vibrating membrane in cutting process not fragile or pollute microphone chip cutting method.
For reaching above-mentioned purpose, the invention provides a kind of cutting method of MEMS microphone chip.Described chip comprises the plane-parallel capacitor that has the substrate of through hole and be arranged on described through hole top, be made up of vibrating membrane and back electrode, and described cutting method comprises:
Step S1 attaches lower membrane below described substrate;
Step S2 arranges at certain intervals upper layer film above described vibrating membrane, and described upper layer film is UV film;
Step S3, cuts MEMS microphone wafer to separate multiple described MEMS microphone chips by water cutter; And
Step S4, is irradiated and is removed described upper layer film by ultraviolet ray.
Preferably, described vibrating membrane is fixed on described back electrode top by separator, and at least part of described separator is covered on described vibrating membrane; In step S2, by being attached to described separator, described upper layer film covers the part of described vibrating membrane, so that described upper layer film compartment of terrain is arranged at described vibrating membrane top.
Preferably, step S4 comprises: carry out ultra-violet lamp irradiation to reduce the adhesiveness of described upper layer film from vibrating membrane one side of described MEMS microphone chip; And be inverted described MEMS microphone wafer, so that described upper layer film comes off.
Preferably, the power of described ultra-violet lamp is more than or equal to 750 watts, and irradiation time is 20-30 second.
Preferably, the adhesiveness of described lower membrane is greater than the adhesiveness of described upper layer film.
Preferably, the thickness of described upper layer film is 20～30 μ m.
Preferably, described lower membrane is UV film, and its thickness is greater than the thickness of described upper layer film.
Preferably, to cover the thickness of the part of described vibrating membrane be 30～50 μ m to described separator.
Preferably, the material of described separator is silicon nitride.
Preferably, on described MEMS microphone wafer, have Cutting Road, in the time implementing the cutting of water cutter, water cutter advances to separate multiple described MEMS microphone chips along described Cutting Road; On described Cutting Road, be provided with pulse code modulator.
The invention has the advantages that, by unsettled one deck UV film that arranges above the vibrating membrane at MEMS Mike chip, can avoid MEMS microphone chip to be polluted in cutting process, and adopt the mode of water cutter cutting effectively to reduce costs.After cutting completes, UV film can irradiate removal by ultraviolet ray on the other hand, and the performance of MEMS Mike chip is not affected.
Brief description of the drawings
Fig. 1 is the schematic diagram of the MEMS microphone chip structure of prior art;
Fig. 2 is the schematic diagram of the radium-shine cutting of MEMS microphone chip wafer of prior art;
Fig. 3 is the flow chart of the MEMS microphone chip cutting method of one embodiment of the invention;
Fig. 4 is the schematic diagram of the MEMS microphone chip structure of one embodiment of the invention;
Fig. 5 a～5d is the cutaway view of the MEMS microphone chip cutting method of one embodiment of the invention;
Fig. 6 is the schematic diagram of the MEMS microphone chip wafer water cutter cutting of one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 3 is the structural representation of the MEMS microphone chip of one embodiment of the invention.The MEMS microphone chip that the present invention adopts comprises substrate 301 and is arranged on the plane-parallel capacitor on substrate.In substrate, have the through hole 302 of perforation, plane-parallel capacitor is made up of vibrating membrane 304 and back electrode 303.Wherein back electrode 303 is fixedly formed on substrate 301, and relative with the through hole 302 of substrate, 304 unsettled back electrode 303 tops that are arranged on of vibrating membrane.In the present embodiment, vibrating membrane 304 is tops of being fixed and be suspended on back electrode 303 by separator 305.The material of separator is for example silicon nitride, and preferably at least part of separator 305 is covered on vibrating membrane 304, and position is slightly higher than vibrating membrane 304, and the raised area is about 30-50um.
Fig. 4 is the flow chart of the MEMS microphone chip cutting method of one embodiment of the invention, Fig. 5 a～5d is the cutaway view of the MEMS microphone chip cutting method of one embodiment of the invention, below in conjunction with Fig. 4 and Fig. 5 a～5d, MEMS microphone chip cutting method of the present invention is described in detail.MEMS microphone chip is produced on wafer, many microphone chips on a wafer can be divided into independently chip by cutting method of the present invention.This cutting method comprises the following steps:
Step S1 attaches one deck lower membrane below substrate.As shown in Figure 5 a, MEMS microphone chip is attached in lower membrane 506, the back side one side of chip (substrate 501 belows) is fitted with lower membrane 506.
Step S2 arranges at certain intervals UV upper layer film above vibrating membrane.Please refer to Fig. 5 b, UV upper layer film 507 tips upside down on vibrating membrane 504, with and vibrating membrane 504 between the gapped mode of tool cover vibrating membrane 504.In the present embodiment, because separator 505 has part at least higher than vibrating membrane 504, therefore UV upper layer film 507 can directly be attached to separator 505 and covers in this part of vibrating membrane, also can avoid sticking together with vibrating membrane.
Step S3, cuts MEMS microphone wafer to separate multiple MEMS microphone chips by water cutter.As shown in Figure 5 c, same microphone wafer has multiple microphone chips 52, and in the time implementing the cutting of water cutter, water cutter is advanced along the Cutting Road 51 of wafer, is multiple microphone chips independently by wafer integral cutting.Due in cutting process, UV upper layer film 507 covers on vibrating membrane all the time, can provide protection to vibrating membrane, avoids it polluted by water cutter and destroy.Figure 6 shows that the schematic diagram of one embodiment of the invention microphone chip water cutter cutting, as shown in the figure, adopt the mode of water cutter cutting, in wafer for the pulse code modulation (pcm) device 63(of chip circuit and performance test as being aluminium oxide material) can be arranged on Cutting Road 61, therefore without the space taking in each chip 62.
Step S4, is irradiated and is removed upper layer film by ultraviolet ray.Please refer to Fig. 5 d, completing after the cutting of water cutter, carry out ultra-violet lamp irradiation from vibrating membrane 504 1 sides of MEMS microphone chip, until the adhesiveness of UV upper layer film 507 declines.Afterwards, be inverted MEMS microphone wafer, due to the adhesiveness of UV upper layer film 507 a little less than, be easy to just can split away off from microphone chip.Preferably, the power of ultra-violet lamp is more than or equal to 750 watts, and irradiation time is 20-30 second.Situation about coming off afterwards in cutting for fear of lower membrane 506, the adhesiveness of lower membrane 506 is preferably more than the adhesiveness of UV upper layer film.Lower membrane 506 can be also UV film, in the time that it is UV film, under ultraviolet ray is irradiated, can lose gradually equally adhesiveness, and therefore the thickness of lower membrane 506 should be greater than the thickness of UV upper layer film 507.Wherein, the thickness of UV upper layer film can be 20～30um, and the thickness of UV lower membrane 506 can be 50um left and right.In other embodiments of the invention, lower membrane 506 can be also blue film or other materials, as long as can keep the adhesiveness stronger than UV upper layer film under ultraviolet ray is irradiated.
In sum, compared with prior art, MEMS microphone cutting method provided by the present invention adopts the mode of water cutter cutting effectively to reduce costs; In addition,, by unsettled one deck UV film that arranges above the vibrating membrane at MEMS Mike chip, can avoid MEMS microphone chip to be polluted in water cutter cutting process.Owing to can being irradiated and be removed the UV film being arranged on vibrating membrane by ultraviolet ray after completing in cutting, the performance of MEMS Mike chip will can not be affected on the other hand.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a cutting method for MEMS microphone chip, described chip comprises the plane-parallel capacitor that has the substrate of through hole and be arranged on described through hole top, be made up of vibrating membrane and back electrode, it is characterized in that, described cutting method comprises:
Step S1 attaches lower membrane below described substrate;
Step S2 arranges at certain intervals upper layer film above described vibrating membrane, and described upper layer film is UV film;
Step S3, cuts MEMS microphone wafer to separate multiple described MEMS microphone chips by water cutter; And
Step S4, is irradiated and is removed described upper layer film by ultraviolet ray.
2. the cutting method of MEMS microphone chip as claimed in claim 1, is characterized in that, described vibrating membrane is fixed on described back electrode top by separator, and at least part of described separator is covered on described vibrating membrane; In step S2, by being attached to described separator, described upper layer film covers the part of described vibrating membrane, so that described upper layer film compartment of terrain is arranged at described vibrating membrane top.
3. the cutting method of MEMS microphone chip as claimed in claim 2, is characterized in that, step S4 comprises: carry out ultra-violet lamp irradiation to reduce the adhesiveness of described upper layer film from vibrating membrane one side of described MEMS microphone chip; And be inverted described MEMS microphone wafer, so that described upper layer film comes off.
4. the cutting method of MEMS microphone chip as claimed in claim 3, is characterized in that, the power of described ultra-violet lamp is more than or equal to 750 watts, and irradiation time is 20-30 second.
5. the cutting method of MEMS microphone chip as claimed in claim 2, is characterized in that, the adhesiveness of described lower membrane is greater than the adhesiveness of described upper layer film.
6. the cutting method of MEMS microphone chip as claimed in claim 5, is characterized in that, the thickness of described upper layer film is 20～30 μ m.
7. the cutting method of the MEMS microphone chip as described in claim 5 or 6, is characterized in that, described lower membrane is UV film, and its thickness is greater than the thickness of described upper layer film.
8. the cutting method of MEMS microphone chip as claimed in claim 2, is characterized in that, the thickness that described separator covers the part of described vibrating membrane is 30～50 μ m.
9. the cutting method of MEMS microphone chip as claimed in claim 8, is characterized in that, the material of described separator is silicon nitride.
10. the cutting method of MEMS microphone chip as claimed in claim 1, is characterized in that, on described MEMS microphone wafer, has Cutting Road, and in the time implementing the cutting of water cutter, water cutter advances to separate multiple described MEMS microphone chips along described Cutting Road; On described Cutting Road, be provided with pulse code modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410118106.1A CN103888887A (en) | 2014-03-27 | 2014-03-27 | Method for cutting MEMS microphone chips |
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| CN201410118106.1A CN103888887A (en) | 2014-03-27 | 2014-03-27 | Method for cutting MEMS microphone chips |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105565254A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device |
| CN107298428A (en) * | 2017-06-27 | 2017-10-27 | 北京航天控制仪器研究所 | A kind of method separated for SOG MEMS chips unit |
| CN107827079A (en) * | 2017-11-17 | 2018-03-23 | 烟台睿创微纳技术股份有限公司 | A kind of preparation method of MEMS chip |
| CN108996470A (en) * | 2018-08-09 | 2018-12-14 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting method |
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| US20020076848A1 (en) * | 2000-12-05 | 2002-06-20 | Spooner Timothy R. | Method and device for protecting micro electromechanical systems structures during dicing of a wafer |
| CN102209287A (en) * | 2010-03-29 | 2011-10-05 | 歌尔声学股份有限公司 | MEMS (micro electro mechanical system) microphone chip and manufacture method thereof |
| US20120091544A1 (en) * | 2009-06-03 | 2012-04-19 | Frank Reichenbach | Component having a micromechanical microphone structure, and method for its production |
| CN103347241A (en) * | 2013-07-03 | 2013-10-09 | 上海集成电路研发中心有限公司 | Capacitor type silicon microphone chip and preparation method thereof |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020076848A1 (en) * | 2000-12-05 | 2002-06-20 | Spooner Timothy R. | Method and device for protecting micro electromechanical systems structures during dicing of a wafer |
| US20120091544A1 (en) * | 2009-06-03 | 2012-04-19 | Frank Reichenbach | Component having a micromechanical microphone structure, and method for its production |
| CN102209287A (en) * | 2010-03-29 | 2011-10-05 | 歌尔声学股份有限公司 | MEMS (micro electro mechanical system) microphone chip and manufacture method thereof |
| CN103347241A (en) * | 2013-07-03 | 2013-10-09 | 上海集成电路研发中心有限公司 | Capacitor type silicon microphone chip and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105565254A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device |
| CN105565254B (en) * | 2014-10-17 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS and preparation method thereof, electronic installation |
| CN107298428A (en) * | 2017-06-27 | 2017-10-27 | 北京航天控制仪器研究所 | A kind of method separated for SOG MEMS chips unit |
| CN107298428B (en) * | 2017-06-27 | 2019-04-09 | 北京航天控制仪器研究所 | A method of it is separated for SOG-MEMS chip unit |
| CN107827079A (en) * | 2017-11-17 | 2018-03-23 | 烟台睿创微纳技术股份有限公司 | A kind of preparation method of MEMS chip |
| CN107827079B (en) * | 2017-11-17 | 2019-09-20 | 烟台睿创微纳技术股份有限公司 | A kind of production method of MEMS chip |
| CN108996470A (en) * | 2018-08-09 | 2018-12-14 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting method |
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Application publication date: 20140625 |