CN107810551B - Granular epoxy resin composition, semiconductor device and method for packaging the same - Google Patents

Granular epoxy resin composition, semiconductor device and method for packaging the same Download PDF

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CN107810551B
CN107810551B CN201680036870.1A CN201680036870A CN107810551B CN 107810551 B CN107810551 B CN 107810551B CN 201680036870 A CN201680036870 A CN 201680036870A CN 107810551 B CN107810551 B CN 107810551B
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epoxy resin
resin composition
micrometers
microns
semiconductor device
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CN107810551A (en
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任首美
梁承龙
严泰信
李殷祯
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Samsung SDI Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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    • C08J3/12—Powdering or granulating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2190/00—Compositions for sealing or packing joints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Power Engineering (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)

Abstract

Disclosed herein are a granular epoxy resin composition for encapsulating a semiconductor device, a method of encapsulating a semiconductor device, and a semiconductor device encapsulated with the granular epoxy resin composition. The average particle size of the particulate epoxy resin composition is from about 500 microns to about 1200 microns, the average particle being after 200 grams of the epoxy resin composition is introduced into a shaker screen followed by sorting at 80 revolutions per minute for 10 minutes, as calculated by equation 1, screens having opening sizes of 150 microns, 250 microns, 355 microns, 500 microns, 600 microns, 850 microns, 1000 microns, 1700 microns, and 2000 microns are stacked in the stated order in the shaker screen. The use of the particulate epoxy resin composition according to the present invention can minimize weighing errors, masking problems of identification marks, deterioration of continuous productivity, and the like.

Description

Granular epoxy resin composition, semiconductor device and method for packaging the same
Technical Field
The present invention relates to a granular epoxy resin composition for encapsulating a semiconductor device, a semiconductor device encapsulated using the same, and a method of encapsulating a semiconductor device.
Background
Recently, with the trend of semiconductor devices for mobile products, the size of a wafer chip (wafer) in the semiconductor device increases and the thickness of the semiconductor device decreases. Therefore, the thickness of the encapsulant on the semiconductor device has also been reduced along with the amount of encapsulant per unit device. Here, the thickness of the encapsulant on the semiconductor device refers to the thickness of the encapsulant covering the opposite surface of the mounting plane of the lead frame or the circuit board on which the semiconductor device is mounted, or the thickness of the encapsulant covering the uppermost semiconductor device on the opposite side of the mounting plane on which the lead frame or the circuit board is mounted when one or more semiconductor devices are stacked on the lead frame or the circuit board.
Recently, in order to minimize a Mold cap (Mold cap) and solve problems such as wire sweep, a semiconductor packaging technology using compression molding (compression Mold) is actively examined. Compression molding (compression mold) is mainly performed using granular/powder encapsulants. However, in the case of typical granular/powder encapsulants used in the art, if the amount of granular/powder encapsulant is reduced, the resin may be unevenly distributed in the mold cavity, thereby causing surface molding defects such as spray unevenness, underfill, voids, and the like. In addition, since the feeding accuracy of the vibration feeder is deteriorated, a resin weighing error and a deviation (deviation) error occur, thereby causing a deterioration in productivity and a waste of packages.
Further, there are also the following problems: the granular/powder packing adheres to the inner surface of the feeder and deteriorates continuous productivity in which the PCB identification mark or the like is masked by the smear due to the scattered fine powder.
Therefore, there is a need for a granular epoxy resin composition for encapsulating semiconductor devices that can solve the problems as described above.
An example of the prior art is disclosed in korean patent laid-open publication No. 2008-121003A.
Disclosure of Invention
Technical problem
An embodiment of the present invention is to provide a granular epoxy resin composition for encapsulating semiconductor devices, which can prevent weighing errors, mask problems of identification marks, and continuous productivity deterioration.
Another embodiment of the present invention is to provide a method of encapsulating a semiconductor device using the granular epoxy resin composition for encapsulating a semiconductor device as described above.
Still another embodiment of the present invention is to provide a semiconductor device encapsulated with the granular epoxy resin composition for encapsulating semiconductor devices as described above.
Technical scheme
According to one embodiment of the present invention, there is provided a granular epoxy resin composition for encapsulating a semiconductor device, wherein the average particle size of the granular epoxy resin composition is about 500 to about 1200 micrometers, after introducing 200 grams of the epoxy resin composition into a shaker screen machine, followed by sorting at 80 revolutions per minute for 10 minutes, as calculated by equation 1, sieves (sieve) having opening sizes of 150 micrometers, 250 micrometers, 355 micrometers, 500 micrometers, 600 micrometers, 850 micrometers, 1000 micrometers, 1700 micrometers, and 2000 micrometers are stacked in the stated order in the shaker screen machine.
< equation 1>
Figure GDA0001519827610000021
In equation 1, IiWeight (g) of the epoxy resin composition retained on the i-th stacking screen, DiOpen ruler for ith stacking screenCun (micrometer) and Di+1Opening size (microns) for the (i + 1) th stacked screen.
The epoxy resin composition may have an average particle size of about 700 microns to about 1100 microns, as calculated by equation 1.
The epoxy resin composition may comprise less than about 5 weight percent (wt%), preferably less than 3 wt% of particles having a particle diameter of less than about 150 microns and about 60 wt% or more than 60 wt%, more preferably about 65 wt% or more than 65 wt% of particles having a particle diameter of about 500 microns or more than 500 microns and less than about 1000 microns.
The epoxy resin composition may be free of particles having a particle diameter of less than about 150 microns.
The epoxy resin composition may contain less than about 20 wt% of particles having a particle diameter of about 1000 microns or greater than 1000 microns, and preferably does not contain particles having a particle diameter of about 1000 microns or greater than 1000 microns.
The epoxy resin composition comprises about 20% or less than 20%, preferably about 15% or less than 15% by number of particles among particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than about 1000 micrometers satisfying equation 2.
< equation 2>
L/2≤H＜L
In equation 2, L is the maximum length of a vertical line connecting a point forming the outer contour of a particle to a line a tangent to both ends of the particle, and H is the maximum length of a vertical line connecting a point forming the inner contour of the particle to a line a tangent to both ends of the particle.
According to another embodiment of the present invention, there is provided a method of encapsulating a semiconductor device, including compression molding the granular epoxy resin composition for encapsulating a semiconductor device.
According to still another embodiment of the present invention, there is provided a semiconductor device encapsulated with the granular epoxy resin composition for encapsulating a semiconductor device.
Advantageous effects
The use of the particulate epoxy resin composition according to the present invention can minimize weighing errors, masking problems of identification marks, deterioration of continuous productivity, and the like.
Drawings
FIG. 1 is a view showing an example of the particle shape of a granular epoxy resin composition for encapsulating a semiconductor device according to the present invention.
Fig. 2 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention.
Fig. 3 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.
Fig. 4 is a cross-sectional view of a semiconductor device according to still another embodiment of the present invention.
Fig. 5 is a cross-sectional view of a semiconductor device according to yet another embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Granular epoxy resin composition for encapsulating semiconductor device
According to the present invention, the average particle diameter of the particulate epoxy resin composition for encapsulating a semiconductor device, as calculated by equation 1, may be about 500 to about 1200 micrometers, for example about 700 to about 1100 micrometers, particularly about 700 to about 1000 micrometers.
The average particle diameter refers to a value as calculated by equation 1 after 200 g of the epoxy resin composition is introduced into a shaker, in which sieves (sieve) having opening sizes of 150 micrometers, 250 micrometers, 355 micrometers, 500 micrometers, 600 micrometers, 850 micrometers, 1000 micrometers, 1700 micrometers, and 2000 micrometers are sequentially stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes.
< equation 1>
Figure GDA0001519827610000041
In equation 1, IiWeight (g) of the epoxy resin composition retained on the i-th stacking screen, DiOpening size (μm) for ith stacked screen, and Di+1Opening size for (i + 1) th stacked screen (micro)Rice).
Here, the sieve is a JIS standard sieve and the shaker is a rotep (Ro-Tap) shaker. Further, the screens are stacked such that the screen with the smallest opening size is in the lowermost position and the screen with the largest opening size is in the uppermost position. That is, a sieve with an opening size of 150 microns is stacked first, a sieve with an opening size of 250 microns is stacked second, a sieve with an opening size of 355 microns is stacked third, a sieve with an opening size of 500 microns is stacked fourth, a sieve with an opening size of 600 microns is stacked fifth, a sieve with an opening size of 850 microns is stacked sixth, a sieve with an opening size of 1000 microns is stacked seventh, a sieve with an opening size of 1700 microns is stacked eighth, and a sieve with an opening size of 2000 microns is stacked ninth. In this method, although there is a possibility that particles having a high aspect ratio (particles having a short diameter smaller than the screen openings and having a long diameter larger than the screen openings) pass through each screen, for convenience, mass% of components classified in a certain method is defined as a particle size distribution of the granular resin composition.
According to the present invention, when the average particle diameter of the particulate epoxy resin composition satisfies the range as described above, the particulate epoxy resin composition can secure stable productivity and moldability since poor filling, adhesion between particles or adhesion of particles to the inner surface of the feeder and masking of the identification mark due to powder scattering are suppressed.
In one embodiment, the granular epoxy resin composition for encapsulating semiconductor devices according to the present invention comprises less than about 5 wt%, preferably less than about 3 wt%, of particles having a particle diameter of less than about 150 μm. If the amount of particles having a particle diameter of less than about 150 micrometers is greater than about 5 wt%, there may be a machine error due to fine powder in the composition, and there may be a problem of masking the identification mark due to an increase in the amount of the dispersed encapsulant. In addition, feeder plugging and package sticking to the feeder can occur. The lower limit of the amount of particles having a particle diameter of less than about 150 μm may be 0 wt%, but is not limited thereto. That is, the epoxy resin composition according to the present invention may not include particles having a particle diameter of less than about 150 μm.
Furthermore, the epoxy resin composition according to the present invention may comprise about 60 wt% or more than 60 wt%, for example about 65 wt% or more than 65 wt%, especially about 65 wt% to about 90 wt% of particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than 1000 micrometers. Within this range, the epoxy resin composition can exhibit more stable productivity and moldability. If the amount of particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than 1000 micrometers is less than about 60 wt%, problems such as surface molding defects, productivity deterioration, and waste of packages may occur due to resin weighing errors and deviation (deviation) errors occurring due to deterioration of feeding accuracy of the vibratory feeder.
In addition, the granular epoxy resin composition for encapsulating semiconductor devices according to the present invention comprises less than about 20 wt%, preferably about 10 wt% or less than 10 wt%, more preferably about 3 wt% or less than 3 wt% of particles having a particle diameter of about 1000 micrometers or more than 1000 micrometers. In this range, the feed port of the feeder can be prevented from being clogged and good weighing accuracy can be achieved. The lower limit of the amount of particles (coarse particles) having a particle diameter of about 1000 micrometers or more may be 0 wt%, but is not limited thereto. That is, the epoxy resin composition according to the present invention may not contain particles having a particle diameter of about 1000 μm or more than 1000. mu.m.
The weight percentage of particles satisfying each of the above particle diameter ranges is calculated as follows. 200 grams of the epoxy resin composition was introduced into a shaker machine in which sieves with opening sizes of 150 microns, 500 microns, and 1000 microns were stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes. Next, the weight of the epoxy resin composition remaining on the screen or the weight of the epoxy resin composition passing through the screen was measured, followed by dividing the weight of the epoxy resin composition by the amount of the epoxy resin composition introduced (200 g). Next, the obtained value is multiplied by 100, thereby calculating the weight percentage of particles satisfying each of the above particle diameter ranges. Here, the sieve is a JIS standard sieve and the shaker is a lotalp shaker. Further, the sieves are stacked such that the sieve having an opening size of 150 micrometers is located at the lowermost position, the sieve having an opening size of 500 micrometers is located at the middle position, and the sieve having an opening size of 1000 micrometers is located at the uppermost position.
Specifically, after the sorting method as described above, the weight of the epoxy resin composition passing through a sieve having an opening size of 150 μm was measured, and then the weight of the epoxy resin composition was divided by the amount (200 g) of the introduced epoxy resin composition. The resulting value is then multiplied by 100 to calculate the weight percent of particles having a particle diameter of less than about 150 microns.
Further, after the sorting method as described above, the weight of the epoxy resin composition remaining on the sieve having an opening size of 500 μm was measured, and then the measured weight of the epoxy resin composition was divided by the amount (200 g) of the introduced epoxy resin composition. The resulting value is then multiplied by 100, thereby calculating the weight percent of particles having a particle diameter of about 500 microns or greater than 500 microns and less than about 1000 microns.
In addition, after the sorting method as described above, the weight of the epoxy resin composition remaining on the sieve having an opening size of 1000 μm was measured, and then the measured weight of the epoxy resin composition was divided by the amount (200 g) of the introduced epoxy resin composition. The resulting value is then multiplied by 100, thereby calculating the weight percent of particles having a particle diameter of about 1000 microns or greater.
The granular epoxy resin composition for encapsulating a semiconductor device according to the present invention may include a number percentage of particles of about 20% or less than 20%, such as about 15% or less than 15%, among particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than about 1000 micrometers, satisfying equation 2. Preferably, the amount of the particles satisfying equation 2 is 0 wt%.
< equation 2>
L/2≤H＜L
Where, referring to FIG. 1, L is the maximum length of a perpendicular line connecting a point forming the particle outer contour to a line A tangent to both ends of the particle, and H is the maximum length of a perpendicular line connecting a point forming the particle inner contour to a line A tangent to both ends of the particle.
The number percentage of particles was calculated as follows. 10 grams of the epoxy resin composition was introduced into a shaker machine in which sieves with opening sizes of 150 microns, 500 microns, and 1000 microns were stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes. Next, the number of the epoxy resin composition particles remaining on the sieve having an opening size of 500 micrometers and the number of the particles satisfying equation 2 among the above particles were measured, thereby calculating the number percentage of the particles satisfying equation 2 among the particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than about 1000 micrometers by equation 3.
< equation 3>
Number percentage of { number of particles satisfying equation 2 among epoxy resin composition particles retained on a sieve having an opening size of 500 μm/total number of epoxy resin composition particles retained on a sieve having an opening size of 500 μm } × 100
As described above, if the number percentage of particles satisfying equation 2 among the particles having a particle diameter of about 500 micrometers or more than 500 micrometers and less than about 1000 micrometers is about 20% or less than 20%, the epoxy resin composition more effectively prevents the feeder clogging by inhibiting the coalescence between the particles.
Composition of granular epoxy resin composition for encapsulating semiconductor device
The granular epoxy resin composition for encapsulating a semiconductor device according to the present invention may include at least one of an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst.
Epoxy resin
The granular epoxy resin composition for encapsulating a semiconductor device according to the present invention comprises an epoxy resin.
The epoxy resin is an epoxy resin having two or more epoxy groups, and may include any epoxy resin commonly used in the art. For example, the epoxy resin may include bisphenol a epoxy resin, bisphenol F epoxy resin, phenol novolac epoxy resin, tertiary butyl catechol epoxy resin, naphthalene epoxy resin, glycidyl amine epoxy resin, cresol novolac epoxy resin, biphenyl epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin, cyclohexanedimethanol epoxy resin, trimethylol epoxy resin, halogenated epoxy resin, and the like. These epoxy resins may be used alone or in combination thereof. For example, the epoxy resin may be an epoxy resin having two or more epoxy groups and one or more hydroxyl groups. The epoxy resin may include at least one of a solid epoxy resin and a liquid epoxy resin, and preferably includes a solid epoxy resin.
Curing agent
The granular epoxy resin composition for encapsulating semiconductor devices according to the present invention may include a curing agent.
The curing agent may comprise any curing agent commonly used in the art. For example, the curing agent may comprise: phenol aralkyl phenol resin, phenol novolac phenol resin, neophenol resin, cresol novolac phenol resin, naphthol phenol resin, terpene phenol resin, polyfunctional phenol resin, dicyclopentadiene phenol resin, and phenol novolac phenol resin synthesized from bisphenol a and resol phenol resin; a polyphenol compound comprising tris (hydroxyphenyl) methane and dihydroxybiphenyl; anhydrides including maleic anhydride and phthalic anhydride; aromatic amines such as m-phenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone, and the like. These curing agents may be used alone or in combination thereof. Preferably, the curing agent is a phenol resin having one or more hydroxyl groups.
Inorganic filler
The granular epoxy resin composition for encapsulating a semiconductor device according to the present invention may contain an inorganic filler.
The inorganic filler improves mechanical properties while reducing stress of the composition. Examples of the inorganic filler may include at least one of fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay (clay), talc (talc), calcium silicate, titanium oxide, antimony oxide, and glass fiber.
To reduce stress, the inorganic filler may comprise fused silica having a low coefficient of linear expansion. Fused silica means amorphous silica having a true specific gravity of 2.3 or less than 2.3. Fused silica is prepared by fusing crystalline silica or comprises amorphous silica synthesized from various raw materials. Although the shape and particle diameter of the fused silica are not particularly limited, the fused silica desirably has a spherical shape. The epoxy resin composition may comprise spherical fused silica having an average particle diameter of 0.001 to 30 μm. Further, the maximum particle diameter of the spherical fused silica can be adjusted to at least one of 45 micrometers, 55 micrometers, and 75 micrometers according to the purpose of the epoxy resin composition. Although conductive carbon may be contained as a foreign substance on the surface of spherical fused silica, it is important to select a material containing as little polar foreign substances as possible.
Curing catalyst
The granular epoxy resin composition for encapsulating semiconductor devices according to the present invention may contain a curing catalyst.
The curing catalyst may comprise a phosphonium curing catalyst, and a non-phosphonium curing catalyst comprising tertiary amines, organometallic compounds, organophosphorus compounds, imidazoles, borides, and the like.
Phosphonium curing catalysts include tetraphenylphosphonium, tetraphenylphosphonium tetraphenylborate, and the like.
The tertiary amine includes benzyl dimethylamine, triethanolamine, triethylene diamine, diethylaminoethanol, tris (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2, 4, 6-tris (dimethylaminomethyl) phenol, tris-2-ethyl hexanoate, and the like.
The organometallic compound includes chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
The organophosphorus compounds include tris-4-methoxyphosphine, triphenylphosphine-triphenylborane, triphenylphosphine-1, 4-benzoquinone adducts, and the like. The imidazole includes 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole and the like. The boride includes triphenylphosphine tetraphenylborate, tetraphenylborate salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine, tetrafluoroborane amine and the like.
The curing catalyst may comprise 1, 5-diazabicyclo [4.3.0] non-5-ene (1, 5-diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8-diazabicyclo [5.4.0] undec-7-ene (1, 8-diazabicyclo [5.4.0] undec-7-ene: DBU), phenol novolac salt, etc. Preferably, the curing catalyst comprises an organophosphorus compound, a boride, an amine or an imidazole curing catalyst. These curing catalysts may be used alone or in combination thereof. The curing catalyst may be an adduct obtained by pre-reacting the curing catalyst with an epoxy resin or a curing agent.
Additive agent
The granular epoxy resin composition for encapsulating semiconductor devices according to the present invention may contain general additives. In one embodiment, the additive may comprise at least one of a coupling agent, a mold release agent, a stress relief agent, a crosslinking promoter, a leveling agent, and a colorant.
The coupling agent may comprise at least one selected from the group consisting of: epoxy silanes, amino silanes, mercapto silanes, alkyl silanes, and alkoxy silanes, but are not limited thereto.
The release agent may comprise at least one selected from the group consisting of: paraffin wax, ester wax, higher fatty acid, metal salt of higher fatty acid, natural fatty acid, and metal salt of natural fatty acid.
The stress relief agent may comprise at least one selected from the group consisting of: modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but are not limited thereto.
The colorant may comprise carbon black or the like.
Method for preparing granular epoxy resin composition for encapsulating semiconductor device
Next, a method of preparing the granular epoxy resin composition for encapsulating a semiconductor device will be described in detail.
The granular epoxy resin composition according to the present invention can be prepared by mixing, melting and kneading the epoxy resin, the curing agent, the inorganic filler, the curing catalyst and/or the additive as described above, followed by adjusting the average particle size of the mixture using a method such as pulverization, granulation, extrusion, cutting and/or sieving. Here, the particle size adjustment can be performed by various particle size adjustment methods well known in the art, such as centrifugal grinding, pulverization-sieving, thermal cutting, and the like.
Centrifugal grinding is a method of adjusting the particle size of powder using a grinding machine comprising a disk-shaped rotator and a cylindrical screen (perforated wire net) installed on the upper side of the rotator. Here, the grinder comprises a cylindrical screen having an opening for feeding the molten and kneaded resin composition. The rotator may be formed of a non-magnetic material having high thermal conductivity, and includes an open-hole wire mesh having mesh holes for cutting the resin composition. Further, a tool for rotating the spinner and a heater for heating the spinner may be provided to the upper side and/or the lower side of the spinner. In addition, the mill may optionally further comprise a cooler for cooling the mill.
The method for preparing the granular epoxy resin composition for encapsulating a semiconductor device using centrifugal grinding according to the present invention is as follows. First, components of the epoxy resin composition are mixed, followed by melting and kneading the components, thereby preparing the epoxy resin composition. Then, the prepared epoxy resin composition was fed into the grinder through an opening of the grinder, and then the rotator was rotated while being heated. The epoxy resin composition passes through the perforated screen by the centrifugal force generated by the rotation of the spinner, and the average particle size of the epoxy resin composition is adjusted in the process. The average particle diameter of the epoxy resin composition can be adjusted according to the mesh size of the open mesh, the rotation speed of the spinner, and/or the temperature of the spinner. When centrifugal grinding is used, there are advantages in that the epoxy resin composition can exhibit a stable particle size distribution, and the particles can have a relatively smooth surface.
Crushing-sieving is a method of adjusting the particle size of powder using a sieve. The method for preparing the granular epoxy resin composition for encapsulating a semiconductor device using the crush-screening according to the present invention is as follows. First, the components of the epoxy resin composition are mixed in advance by a mixer, followed by heating and kneading the components by a roller, a kneader, an extruder, or the like, and then cooling and pulverizing are performed, thereby forming a pulverized epoxy resin composition. Next, the pulverized epoxy resin composition was classified using a sieve, thereby removing coarse particles and fine powder. Here, the epoxy resin composition having a desired average particle diameter can be prepared by appropriately selecting sieving conditions. Size reduction-screening is desirable because a typical manufacturing line can be used as is without additional separation equipment. Furthermore, when the molten resin is formed into flakes prior to comminution, crush-sieving is desirable in order to achieve a particle size distribution according to the present invention because there are many factors that can be independently controlled, such as selecting flake thickness, selecting crush conditions or screening during comminution, selecting screens during sieving, etc., since crush-sieving has many options for adjusting the epoxy resin composition to a desired particle size distribution.
Next, thermal cutting is a method of adjusting the particle diameter by cutting the molten resin. The method for preparing the granular epoxy resin composition for encapsulating a semiconductor device using thermal cutting according to the present invention is as follows. First, components of an epoxy resin composition are mixed in advance by a mixer, and then a strand-like molten resin in which a plurality of small holes of an extrusion die are arranged is cut by a cutter sliding almost parallel to the die surface while heating and kneading the components using an extruder provided with a die including a plurality of small holes at the leading end of a screw. Here, the epoxy resin composition having a desired average particle diameter can be prepared by appropriately selecting kneading conditions and/or cutting conditions. Since the hot cutting device is provided only to the front end of the extruder in hot cutting, hot cutting is desirable because a typical manufacturing line can be used as is.
The granular epoxy resin composition for encapsulating semiconductor devices according to the present invention can be used in a wide range of applications as follows: the epoxy resin composition is required for applications of encapsulating semiconductor devices, adhesive films, insulating resin sheets such as prepregs, circuit boards, solder resists, underfills, die bonding materials, and component supplement resins, but is not limited thereto.
Package for semiconductor device
The semiconductor device according to the present invention may be encapsulated using the granular epoxy resin composition for encapsulating semiconductor devices as described above.
Fig. 2 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention. Referring to fig. 2, a semiconductor device 100 according to one embodiment of the present invention may include a wiring board 10, a bump 30 formed on the wiring board 10, and a semiconductor chip 20 formed on the bump 30, wherein a gap between the wiring board 10 and the semiconductor chip 20 and the entire top surface of the semiconductor chip 20 are encapsulated with an epoxy resin composition 40. Here, the epoxy resin composition may include the granular epoxy resin composition for encapsulating a semiconductor device according to the present invention.
Fig. 3 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. Referring to fig. 3, a semiconductor device 200 according to another embodiment of the present invention may include a wiring board 10, bumps 30 formed on the wiring board 10, and semiconductor chips 20 formed on the bumps 30, wherein a gap between the wiring board 10 and the semiconductor chips 20 and the entire side surfaces of the semiconductor chips 20 except for the top surfaces thereof may be encapsulated with an epoxy resin composition 40. Here, the epoxy resin composition may include the granular epoxy resin composition for encapsulating a semiconductor device according to the present invention.
Fig. 4 is a cross-sectional view of a semiconductor device according to yet another embodiment of the present invention. Referring to fig. 4, in the semiconductor device 300 according to this embodiment, the semiconductor chip 20 is fastened to the upper surface of the die pad 50 via the solidified die bonding material 60, and the semiconductor chip 20 is connected to the lead frame 80 via the wires 70. The semiconductor chip 20, the die pad 50, and the cured die-bonding material 60 may all be encapsulated with the epoxy composition 40. Here, the epoxy resin composition may include the granular epoxy resin composition for encapsulating a semiconductor device according to the present invention.
Fig. 5 is a cross-sectional view of a semiconductor device according to yet another embodiment of the present invention. Referring to fig. 5, in the semiconductor device 400 according to this embodiment, the semiconductor chip 20 is fastened to the upper surface of the wiring board 10 via the solidified die bonding material 60. The semiconductor chip 20 is connected to the electrode pad 90 on the upper side of the wiring board 10 via the wire 70. Solder balls 110 may be formed on the lower surface of the wiring board 10. Only the surface of the wiring board 10 on which the semiconductor chip 20 is mounted may be encapsulated with the epoxy resin composition 40. Here, the epoxy resin composition may include the granular epoxy resin composition for encapsulating a semiconductor device according to the present invention.
In fig. 2-5, the dimensions of each wiring board, die pad, bumps, and semiconductor chip, the thickness of the solidified die bonding material layer, the number of bumps, the length of the wires and lead frame are optional and may be modified.
The method of encapsulating a semiconductor device using the composition according to the present invention may include compression molding the granular epoxy resin composition for encapsulating a semiconductor device according to the present invention as described above. More specifically, compression molding may include, for example, supplying a granular epoxy resin composition into a mold cavity, melting the epoxy resin composition, immersing the semiconductor device into the molten epoxy resin composition, and encapsulating the semiconductor device by curing the molten epoxy resin composition.
The invention will next be described in more detail with reference to certain examples. It should be understood that these examples should not be construed as limiting the invention in any way.
Examples of the invention
Details and amounts of the components of the epoxy resin compositions used in examples and comparative examples are as follows.
(1) Epoxy resin
7.4 wt% of NC-3000 (Nippon Kayaku Co., L td.)) which is a biphenyl phenol aldehyde Epoxy Resin and 1.8 wt% of YX-4000 (Japan Epoxy Resin Co., L td.)) which is a biphenyl Epoxy Resin were used.
(2) Curing agent
3.3 wt% of D L-92 (Ming & Co., L td.)) which is a phenol novolac resin and 0.8 wt% of MEH-7851S (Ming & Co., Ltd.) which is a diphenol novolac resin were used.
(3) Curing catalyst
0.7% by weight of triphenylphosphine (Triphenyl phosphine) (Beixing chemical Co., Ltd., (Hokko chemical Co., L td.)) was used.
(4) Inorganic filler
85% by weight of spherical fused silica having an average particle diameter of 20 μm was used.
(5) Coupling agents
0.2% by weight of epoxy silane KBM-303 (Shin-Etsu Co., L td.)) and 0.2% by weight of amino silane KBM-573 (Shin-Etsu Co., Ltd.) were used.
(6) Coloring agent
Carbon black MA-600B (Mitsubishi Chemical Co., L td.) was used at 0.3 wt%.
(7) Release agent
0.3 wt% of carnauba wax was used.
Examples 1 to 5 and comparative examples 1 to 3
The components as listed in table 1 were weighed and uniformly mixed using a henschel mixer to prepare a first powder composition. Next, each of the first compositions was kneaded in an extruder and supplied to a centrifugal grinder to prepare a pelletized epoxy resin composition. Here, the kneading temperature and the centrifugal grinding conditions are as listed in Table 1.
Each of the epoxy resin compositions was evaluated for average particle size, particle size classification, shape and characteristics by the following methods.
(1) Average particle size (μm): 200 grams of the epoxy resin composition was introduced into a shaker machine in which sieves (sieve) with opening sizes of 150 microns, 250 microns, 355 microns, 500 microns, 600 microns, 850 microns, 1000 microns, 1700 microns, and 2000 microns were stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes. Next, the average particle size of each epoxy resin composition was calculated by equation 1.
< equation 1>
Figure GDA0001519827610000131
In equation 1, IiWeight (g) of the epoxy resin composition retained on the i-th stacking screen, DiIs the opening size (micrometers) of the ith stacked screen, andDi+1opening size (microns) for the (i + 1) th stacked screen.
(2) Particle size classification (wt%): 200 grams of the epoxy resin composition was introduced into a shaker machine in which sieves with opening sizes of 150 microns, 500 microns, and 1000 microns were stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes. Next, the weight of the epoxy resin composition passing through each sieve having an opening size of 150 μm, the weight of the epoxy resin composition remaining on the sieve having an opening size of 500 μm, and the weight of the epoxy resin composition remaining on the sieve having an opening size of 1000 μm were measured. Then, each measured weight was divided by the amount of the epoxy resin composition introduced and multiplied by 100, thereby calculating the weight percentage of particles satisfying each particle diameter range.
(3) Shape characteristics (%): 10 grams of the epoxy resin composition was introduced into a shaker machine in which sieves with opening sizes of 150 microns, 500 microns, and 1000 microns were stacked in the stated order, followed by sorting at 80 revolutions per minute for 10 minutes. Next, the number of the epoxy resin composition particles remaining on the sieve having an opening size of 500 micrometers and the number of the particles satisfying equation 2 were measured, thereby calculating the percentage of the number of the particles satisfying equation 2 among the particles remaining on the sieve having an opening size of 500 micrometers by equation 3.
< equation 2>
L/2≤H＜L
In equation 2, L is the maximum length of a vertical line connecting a point forming the outer contour of a particle to a line a tangent to both ends of the particle, and H is the maximum length of a vertical line connecting a point forming the inner contour of the particle to a line a tangent to both ends of the particle.
< equation 3>
Number percentage of { number of particles satisfying equation 2 among epoxy resin composition particles retained on a sieve having an opening size of 500 μm/total number of epoxy resin composition particles retained on a sieve having an opening size of 500 μm } × 100
(4) Machine error (weighing and deviation error) each of the epoxy resin compositions of examples and comparative examples was molded to a thickness of 110 μm 20 times using a compression molding machine (Towa Co., L td.) the epoxy resin composition affected by at least one weighing error and resin deviation error is listed as X and the epoxy resin composition unaffected by the weighing error and resin deviation error is listed as O.
(5) Fillability each of the epoxy resin compositions of examples and comparative examples was molded on a semiconductor chip of a PKG assembly by a compression molding machine (east and limited), in which a wafer chip having a size of 12 mm × 12 mm was mounted on an FBGA substrate having 56 cells (size: 15 mm × 15 mm) using paste, here, the molding thickness of each epoxy resin composition was 110 μm, the molding temperature was 165 ℃, and the molding time was 60 seconds.
(6) Blockage of a feeder: each of the epoxy resin compositions of examples and comparative examples was molded to a thickness of 110 μm 20 times using a compression molding machine (Toho and Co., Ltd.). The epoxy resin composition that caused the feeder to be clogged at least once was listed as X and the epoxy resin composition that did not cause the feeder to be clogged was listed as O.
(7) The epoxy resin composition adheres to the inner surface of the feeder: the operation of introducing 3.3 g of each of the epoxy resin compositions of examples and comparative examples into a compression molding machine (east and Co., Ltd.) at a feed rate of 0.2 g/sec was repeated 20 times using a vibration feeder of the molding machine. After the feeding was completed, the feeder was separated and the weight of the epoxy resin composition adhered to the inner wall of the feeder was measured. When the total weight of the epoxy resin composition adhered to the feeder is less than 150 mg (in this case, the epoxy resin composition adhered to the inner surface of the feeder is hardly observed), it is allowed to list the epoxy resin composition as O. When the total weight of the epoxy resin composition adhered to the feeder was 150 mg or more (since the adhesion of the epoxy resin composition significantly occurred, the inner surface of the feeder was observed to be blackened by the naked eye), the epoxy resin composition was listed as X.
(8) Masking defects of identification marks
Each of the epoxy resin compositions of examples and comparative examples was molded to a thickness of 20 μm 20 times using a compression molding machine (Toho and Co., Ltd.). When the average number of stains scattered on the identification mark area per PCB is 1 or more than 1, the epoxy resin composition is listed as X. When the average number of stains scattered on the identification mark area per PCB is less than 1, the epoxy resin composition is listed as O.
TABLE 1
Figure GDA0001519827610000161
For the epoxy resin compositions of examples 1 to 5 having the particle size distribution according to the present invention, the ratio of the particles satisfying equation 2 was 20% or less than 20%, and problems such as machine error, poor filling, feeder clogging, adhesion of the encapsulant to the inner surface of the feeder, and masking of the identification mark did not occur.
For the epoxy resin compositions of comparative examples 1 to 3, which did not have the particle size distribution according to the present invention, the epoxy resin composition of comparative example 1 caused problems of machine error, poor filling, and feeder clogging, the epoxy resin composition of comparative example 2 caused problems of machine error, poor filling, and masking of the identification mark, and the epoxy resin composition of comparative example 3 caused problems of the encapsulant adhering to the inner surface of the feeder and masking of the identification mark. Therefore, it was confirmed that the epoxy resin compositions of comparative examples 1 to 3 could not achieve the effects of the present invention.
While certain embodiments have been described herein, it should be understood that the foregoing embodiments are provided for illustrative purposes only and are not to be construed as limiting the invention in any way, and that various modifications, alterations, adaptations, and equivalent embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention.

Claims (10)

1. A granular epoxy resin composition for encapsulating a semiconductor device, wherein an average particle diameter of the granular epoxy resin composition is 500 to 1200 micrometers, and the granular epoxy resin composition comprises less than 5 wt% of particles having a particle diameter of less than 150 micrometers, and 60 wt% or more than 60 wt% of particles having a particle diameter of 500 micrometers or more than 500 micrometers and less than 1000 micrometers, wherein the average particle diameter is calculated by equation 1 after 200 grams of the epoxy resin composition is introduced into a shaker screen machine in which screens having opening sizes of 150 micrometers, 250 micrometers, 355 micrometers, 500 micrometers, 600 micrometers, 850 micrometers, 1000 micrometers, 1700 micrometers, and 2000 micrometers are stacked in the stated order, followed by classification at 80 revolutions per minute for 10 minutes;
< equation 1>
Figure FDA0002447879750000011
Wherein IiWeight in grams of the epoxy resin composition retained on the ith stacking screen, DiIs the opening size in microns of the ith stacked screen, and Di+1Opening size in microns for the (i + 1) th stacked screen.
2. The particulate epoxy resin composition of claim 1, wherein the average particle size of the epoxy resin composition is 700 to 1100 microns as calculated by equation 1.
3. The particulate epoxy resin composition of claim 1, comprising: less than 3 wt% of particles having a particle diameter of less than 150 microns, and 65 wt% or more than 65 wt% of particles having a particle diameter of 500 microns or more than 500 microns and less than 1000 microns.
4. The particulate epoxy resin composition of claim 1, which does not contain particles having a particle diameter of less than 150. mu.m.
5. The particulate epoxy resin composition of claim 1, comprising: less than 20 wt% of particles having a particle diameter of 1000 microns or greater than 1000 microns.
6. The particulate epoxy resin composition of claim 1, which does not contain particles having a particle diameter of 1000 μm or more.
7. The particulate epoxy resin composition of claim 1, comprising: 20% or less than 20% of the particles having a particle diameter of 500 micrometers or more than 500 micrometers and less than 1000 micrometers satisfy equation 2;
< equation 2>
L/2≤H＜L
Wherein L is the maximum length of a vertical line connecting a point forming the outer contour of a particle to a line A tangent to both ends of the particle, and H is the maximum length of a vertical line connecting a point forming the inner contour of the particle to the line A tangent to both ends of the particle.
8. The particulate epoxy resin composition of claim 7, comprising: 15% or less than 15% of the particles having a particle diameter of 500 micrometers or more than 500 micrometers and less than 1000 micrometers satisfy equation 2.
9. A method of packaging a semiconductor device, comprising: compression molding the particulate epoxy resin composition for encapsulating a semiconductor device according to any one of claims 1 to 8.
10. A semiconductor device encapsulated with the granular epoxy resin composition for encapsulating a semiconductor device according to any one of claims 1 to 8.
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