KR20190034031A - Epoxy resin composition, method for encapsulating semiconductor device and semiconductor device - Google Patents

Abstract

The present invention relates to an epoxy resin composition for sealing a semiconductor device, capable of reducing warpage and wire sweeping of a sealed semiconductor package, and to a method for sealing a semiconductor device using the same. The epoxy resin composition for sealing a semiconductor device comprises an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler.

Description

TECHNICAL FIELD [0001] The present invention relates to an epoxy resin composition for encapsulating semiconductor devices, a semiconductor device encapsulation method using the same, and a semiconductor device using the epoxy resin composition for semiconductor device encapsulation,

The present invention relates to an epoxy resin composition for sealing a semiconductor device, a semiconductor device sealing method using the same, and a semiconductor device sealed with the epoxy resin composition for semiconductor device sealing.

In recent years, portable digital devices having a small and thin design have become popular. Accordingly, the semiconductor package has been made lighter, thinner, and smaller in order to increase the mounting efficiency per unit volume of the semiconductor package to be mounted therein. On the contrary, in order to increase the capacity of a digital device, there is a growing demand for a technique of forming a thicker semiconductor package and increasing its capacity.

However, when the semiconductor package is made lighter, thinner, and smaller, warpage of the package due to a difference in thermal expansion coefficient between the semiconductor chip, the lead frame, and the epoxy resin composition constituting the semiconductor package may occur. In addition, the thickness variation of the semiconductor package is increased due to the non-uniformity of the filler during thermal shrinkage and shrinkage of the epoxy resin composition sealing the package, and the occurrence of warpage can be promoted.

In addition, in the case of increasing the capacity of the semiconductor package, the length and density of the bonding wires connecting the semiconductor chip and the wiring board of the semiconductor package are increased, and the diameter is reduced. Thus, the wire sweeping ) May occur.

If a warpage or a wire sweep problem occurs in the semiconductor package, defective soldering in a post-semiconductor process or electrical failure such as a wire short may occur.

Accordingly, it is an object of the present invention to provide a semiconductor package which is advantageous to be applied to a lightweight, thin, miniaturized semiconductor package or a large-capacity thick semiconductor package, It is necessary to develop a sealing epoxy resin composition capable of solving the above problems.

It is an object of the present invention to provide an epoxy resin composition for sealing a semiconductor element which is capable of solving molding problems such as warpage and wire sweeping which may occur in a conventional semiconductor package sealing process.

Another object of the present invention is to provide a method of encapsulating a semiconductor element using the epoxy resin composition for encapsulating a semiconductor element.

It is still another object of the present invention to provide a semiconductor element sealed with the epoxy resin composition for sealing a semiconductor element in particle form

The above and other objects of the present invention can be achieved by the present invention described below.

In one aspect, the present invention provides an epoxy resin composition for encapsulating a semiconductor device, which comprises an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, and has a viewing angle of 40 degrees or more and a particle shape.

In an embodiment, the particle shape may be plate-like.

In embodiments, the particle shape may be polygonal or rectangular in shape.

In an embodiment, the particle shape may satisfy the following formula (1).

[Formula 1]

0.2 < (a / b) < 0.6

In the above formula (1), a is the short diameter of the particle cross section, and b is the long diameter of the particle cross section.

In an embodiment, a in the formula 1 may be 0.1 mm to 2 mm, and b may be 0.5 mm to 5 mm.

In an embodiment, the inorganic filler may comprise at least one of fumed silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, have.

In an embodiment, the inorganic filler may have an average particle size of from 40 탆 to 50 탆.

In an embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises 2 to 15% by weight of an epoxy resin, 0.1 to 13% by weight of a curing agent, 0.01 to 2% by weight of a curing accelerator, and 70 to 95% %. &Lt; / RTI &gt;

In an embodiment, the epoxy resin composition for sealing a semiconductor device may further include at least one of a colorant, a coupling agent, a releasing agent, a stress relaxation agent, a crosslinking promoter, a leveling agent, and a flame retardant.

In another aspect, the present invention provides a method of encapsulating a semiconductor element comprising sprinkling the above-described epoxy resin composition for encapsulating a semiconductor element on a semiconductor element, followed by compression molding.

In another aspect, the present invention provides a semiconductor device sealed with the above-described semiconductor element epoxy resin composition.

The epoxy resin composition for semiconductor device encapsulation according to the present invention is capable of forming a spring-clining pattern with excellent positional accuracy at the time of spring-clamping in the encapsulating process, excellent in formability of a spring-clining pattern, It is possible to reduce the occurrence of warpage and wire sweep of the semiconductor package sealed with the semiconductor package.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description of the claims.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a method of measuring the angle of visibility of an epoxy resin composition for sealing a semiconductor device of the present invention. FIG.

&Lt; Epoxy resin composition for sealing semiconductor elements in particle form >

An embodiment of the present invention relates to an epoxy resin composition for sealing a semiconductor element, which comprises an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, and has a viewing angle (falling angle)

The method of measuring the angle of incidence is a method of measuring the angle between the outer circumferential point of the bottom surface of the sample and the conical apex of the sample deposited by transporting a sample of a certain volume with a constant vibration using a transfer device, have.

For example, the angle of incidence can be measured using the compression molding equipment (PMC-1040D) according to the embodiment described below and the attached angle-of-view measurement method of FIG.

The epoxy resin composition for semiconductor device encapsulation of the present invention has a particle shape and the angle of incidence is controlled to 40 degrees or more so that the epoxy resin composition for sealing a semiconductor element is positioned at a desired point during spring- Can be increased. Thus, unlike the conventional epoxy resin composition for sealing a semiconductor device, a deposited sprinkling pattern can be formed in a desired form.

In addition, the epoxy resin composition for semiconductor device encapsulation has an excellent formability of a sprinkling pattern and can provide an epoxy resin composition for sealing a semiconductor device which is advantageous for changing a pattern.

The epoxy resin composition for semiconductor device encapsulation is excellent in the effect of reducing warpage and wire sweep of a sealed semiconductor package.

When the angle of view of the epoxy resin composition for sealing a semiconductor device is less than 40 degrees, it is difficult to control the shape and position of the epoxy resin composition deposited by sprinkling, thereby making it difficult to form a pattern.

The viewing angle may be, for example, 45 degrees or more, 50 degrees or more, 55 degrees or more, 80 degrees or less, 70 degrees or less, or 60 degrees or less. Within the above range, the epoxy resin composition for sealing a semiconductor element in particle form can further improve positional accuracy during sprinkling.

When the epoxy resin composition for sealing a semiconductor device does not have a particle shape, it is difficult to control the shape and position of the epoxy resin composition for sputtering by sprinkling, so that it is difficult to form a pattern.

In one embodiment, the particle shape may be in the form of a plate, polygonal column or rectangular parallelepiped. In the particle form of the above examples, the epoxy resin composition for sealing a semiconductor element is advantageous to realize a viewing angle of 40 degrees or more, and the occurrence of warpage and wire sweep of the semiconductor package can be further reduced. In particular, when the particle shape is a plate shape, the viewing angle can be realized to be 40 degrees or more.

In one embodiment, the particle morphology may satisfy Equation 1 below. In this case, the epoxy resin composition for sealing a semiconductor element can further reduce the thickness variation of the sealed semiconductor package.

[Formula 1]

0.2 < (a / b) < 0.6

In the above formula (1), a is the short diameter of the particle cross section, and b is the long diameter of the particle cross section.

The epoxy resin composition for sealing a semiconductor element in particle form is advantageous in realizing a viewing angle of 40 degrees or more and can further improve the formability of a sprinkling pattern within the range satisfying the above formula 1, The generation of the wire sweep can be further reduced.

Specifically, a may be 0.1 mm to 2 mm.

Specifically, b may be 0.5 mm to 5 mm.

Hereinafter, each component of the composition according to the present invention will be described in more detail.

(A) an epoxy resin

The epoxy resin is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. In an embodiment, the epoxy resin may be an epoxy compound containing two or more epoxy groups in the molecule.

For example, the epoxy resin may be an epoxy resin obtained by epoxidating a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a phenol aralkyl type Epoxy resin, multifunctional epoxy resin, naphthol novolak type epoxy resin, novolak type epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type Epoxy resins, dicyclopentadiene-based epoxy resins, biphenyl-type epoxy resins, and the like.

Specifically, the epoxy resin may include at least one of a biphenyl-type novolac epoxy resin, a biphenyl-type epoxy resin, an orthocresol novolak-type epoxy resin, and a phenol aralkyl type epoxy resin. More specifically, at least one of biphenyl type novolac epoxy resin and phenol novolak resin can be used as the epoxy resin. In this case, the epoxy resin composition for sealing a semiconductor element in a particle form can achieve an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package.

The epoxy resin may be used in an amount of 2 to 15% by weight, specifically 3 to 15% by weight and 3 to 12% by weight in the epoxy resin composition for sealing a semiconductor device. Within this range, the particle-shaped epoxy resin composition for semiconductor device encapsulation can realize an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package.

(B) Curing agent

The curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups or amino groups, which are conventionally used for sealing semiconductor devices, and at least one selected from the group consisting of monomers, oligomers and polymers can be used.

For example, the curing agent may be a phenol aralkyl type phenol resin, a xylock type phenol resin, a phenol novolac type phenol resin, a biphenyl novolac resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, (Hydroxyphenyl) methane and di (methoxyphenyl) methane resin synthesized from bisphenol A and resole, a polyfunctional phenol resin such as tris (hydroxyphenyl) methane and di A polyhydric phenol compound including hydroxybiphenyl, an acid anhydride including maleic anhydride and phthalic anhydride, at least one curing agent selected from the group consisting of metaphenylenediamine, diaminophenylmethane, and diaminophenylsulfone have. Specifically, at least one of a phenol novolac resin and a biphenyl novolac resin may be used. In this case, the epoxy resin composition for sealing a semiconductor element in a particle form can achieve an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package.

The curing agent may be 0.1 to 13% by weight, specifically 0.1 to 10% by weight and more particularly 2 to 8% by weight in the epoxy resin composition for sealing a semiconductor device. Within this range, the particle-shaped epoxy resin composition for semiconductor device encapsulation can realize an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package.

(C) Curing accelerator

The curing accelerator promotes the reaction between the epoxy resin and the phenolic curing agent. As the curing accelerator, a tertiary amine, an organometallic compound, an organic phosphorus (P) compound, an imidazole-based compound, a boron compound, or the like can be used. Specifically, an organic phosphorus (P) compound can be used. In this case, the effect of improving the hardening acceleration can be further improved.

Specifically, the tertiary amine may be selected from the group consisting of benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris Diaminomethyl) phenol and salts of tri-2-ethylhexyl acid, and the like, but are not limited thereto.

Specifically, the organometallic compound includes, but is not limited to, chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. The organophosphorus compound is preferably selected from the group consisting of tris-4-methoxyphosphine, tetrabutylphosphonium bromide, butyltriphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, tri Phenylphosphine-1,4-benzoquinone adduct, and the like.

Specifically, the imidazole-based compound is at least one compound selected from the group consisting of 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl- , 2-heptadecylimidazole, and the like. The boron compound may be at least one selected from the group consisting of tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like, but are not limited thereto.

Specifically, as the curing accelerator, in addition to a tertiary amine, an organometallic compound, an organic phosphorus (P) compound, an imidazole compound or a boron compound, 1,5-diazabicyclo [4.3.0] 1,8-diazabicyclo [5.4.0] undec-7-ene, and phenol novolak resin salt.

In one embodiment, the curing accelerator may also be used in the form of an adduct prepared by pre-reacting with an epoxy resin and / or a phenolic curing agent.

The amount of the curing accelerator to be used in the present invention may be 0.01 wt% to 2 wt%, specifically 0.02 wt% to 1.5 wt%, more specifically 0.05 wt% to 1 wt%, based on the total weight of the epoxy resin composition. Within this range, the particle-shaped epoxy resin composition for semiconductor device encapsulation can realize an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package and promoting curing The degree of curing can be further improved.

(D) Inorganic filler

Inorganic fillers are used to improve mechanical properties and lower stress in epoxy resin compositions. Examples of the inorganic filler include, but are not limited to, fumed silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber. These may be used alone or in combination of two or more.

Specifically, fused silica having a low coefficient of linear expansion can be used as the inorganic filler for low stress. The fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and may include amorphous silica obtained by melting crystalline silica or synthesized from various raw materials.

More specifically, the fused silica having spherical average particle diameter of 40 탆 to 50 탆 can be used. In this case, the epoxy resin composition for sealing semiconductor elements in the form of particles can further improve the mechanical properties and lower the stress.

The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In the specific example, 70 wt% to 95 wt%, specifically 75 wt% to 92 wt%, of the epoxy resin composition for encapsulating semiconductor devices can be included. Within this range, the particle-shaped epoxy resin composition for semiconductor device encapsulation can realize an excellent sealing effect while increasing the effect of reducing warpage and wire sweep of a sealed semiconductor package.

(E) Additive

The epoxy resin composition according to the present invention may further contain additives such as a colorant, a coupling agent, a releasing agent, a stress relieving agent, a crosslinking promoter, a leveling agent and a flame retardant in addition to the above components.

As the coloring agent, carbon black or an organic or inorganic dye can be used, but it is not limited thereto. The colorant may be contained in an amount of 0.05% by weight to 1% by weight in the epoxy resin composition for sealing a semiconductor element in particle form.

As the coupling agent, a silane coupling agent may be used. As the silane coupling agent, at least one of epoxysilane, aminosilane, mercaptosilane, alkylsilane and alkoxysilane may be used, but the present invention is not limited thereto.

The coupling agent may be used in an amount of 0.01 wt% to 5 wt%, and more preferably 0.05 wt% to 3 wt% based on the total weight of the epoxy resin composition for sealing a semiconductor element in particle form. More specifically from 0.1% to 2% by weight.

As the release agent, at least one of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used. The release agent may be contained in an amount of 0.1% by weight to 5.5% by weight in the particle-shaped epoxy resin composition for sealing a semiconductor device.

As the stress relieving agent, at least one of denatured silicone oil, silicone elastomer, silicone powder and silicone resin may be used, but is not limited thereto. The stress relieving agent may be contained in an amount of 0.1 wt% to 5.5 wt% of the epoxy resin composition for sealing a semiconductor element in particle form.

Non-halogen organic or inorganic flame retardants may be used as the flame retardant. Examples of the non-halogenated organic or inorganic flame retardant include, but are not limited to, flame retardants such as phosphazene, zinc borate, aluminum hydroxide and magnesium hydroxide.

The flame retardant may vary depending on the content of the inorganic filler and the type of the phenol-based curing agent, so that the flame retardant may be contained in an appropriate ratio depending on the flame retardancy of the epoxy resin composition. The content of the flame retardant may be 10% by weight or less, specifically 8% by weight or less, more specifically 5% by weight or less in the particle-shaped epoxy resin composition for sealing a semiconductor device.

&Lt; Process for producing epoxy resin composition for sealing semiconductor elements in particle form >

The method for producing the epoxy resin composition for semiconductor encapsulation of the present invention is not particularly limited. For example, the above-mentioned epoxy resin, curing agent, inorganic filler, curing accelerator and / or additive components are mixed, melted and kneaded, And may be produced in the form of particles by a method such as a pulverization method, a pulverizing method, a hot cut method and the like.

In one embodiment, the centrifugal milling may be performed by passing the epoxy resin composition for semiconductor encapsulation melt-kneaded by centrifugal force through a rotating punching wire netting to form particles. In such centrifugal milling, the temperature and speed of the rotor, the hole size and shape of the punching wire mesh can be adjusted according to the desired particle shape.

The centrifugal milling method can change the production conditions depending on the viscosity of the melt-kneaded epoxy resin composition for semiconductor encapsulation. At this time, the higher the temperature of the punching wire mesh, the shorter the diameter and the longer the diameter, and the higher the speed of the rotor, the smaller the diameter and the longer the diameter becomes. For example, the temperature of the punching wire mesh may be between 90 ° C and 130 ° C, and the speed of the rotor may be between 2500 rpm and 5000 rpm.

The particle-shaped epoxy resin composition for semiconductor device encapsulation of the present invention can be applied to various applications requiring such as semiconductor device sealing.

<Semiconductor Device Sealing Method>

Another embodiment of the present invention relates to a semiconductor device sealing method using the above-described epoxy resin composition for sealing a semiconductor element.

Conventional compression molding methods for encapsulating semiconductor devices sprinkle epoxy resin compositions for semiconductor encapsulation into all cavity regions to a uniform degree. In this case, uneven wire sweeps may occur in the outer portion where a large amount of flow is generated as compared with the central portion . Particularly, when the thickness of the sealing material on the semiconductor element is reduced to 0.5 mm or less, since the amount of sprinkling is reduced, the spacing formed by the epoxy resin composition for semiconductor encapsulation deposited by sprinkling increases and the incidence of wire sweep Can be increased.

By sealing the semiconductor device of the present invention using the above-described epoxy resin composition for encapsulating semiconductor devices, warpage and wire sweep of the encapsulated semiconductor package can be effectively reduced.

The method for sealing the semiconductor device of the present invention may include sprinkling the epoxy resin composition for semiconductor encapsulation according to the present invention on a semiconductor element, followed by compression molding. In this case, the method of encapsulating the semiconductor device can improve the drop stability and improve the position accuracy through the high angle of visibility of the epoxy resin composition for sealing a semiconductor element, which is in the form of particles.

Specifically, compression molding may be performed by sprinkling a particle-shaped epoxy resin composition for semiconductor encapsulation into a cavity in which compression molding is performed, and compressing the entire surface of the cavity. In this case, the shape of the pattern can be adjusted to reflect the difference in the degree of flow generated in the center portion and the outer portion of the cavity, and the shape of the pattern can be easily changed so as to complement the region where the wire sweep occurs.

Example

Hereinafter, the present invention will be described in more detail by way of examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

Specific specifications of the components used in the following examples and comparative examples are as follows.

(A) an epoxy resin

(a1) biphenyl type novolac epoxy resin NC-3000 (Nippon Kayaku)

(a2) Biphenyl type epoxy resin YX-4000 (Japan Epoxy Resin)

(B) Curing agent

(b1) phenol novolac resin DL-92 (manufactured by Meiwa)

(b2) MEH-7851S (manufactured by Meiwa), a biphenyl novolak resin,

(C) Curing accelerator

Triphenyl phosphine (Hokko Chemical)

(D) Inorganic filler

Spherical fused silica having an average particle diameter of 45 탆

(E) Coupling agent

(e1) epoxy silane KBM-303 (Shin Etsu) and

(e2) Aminosilane KBM-573 (Shin Etsu)

(F) Colorant

Carbon black MA-600B (manufactured by Mitsubishi Chemical Corporation)

(G) Releasing agent

Carnauba wax

Example 1

, 7.1 weight% of biphenyl type novolak epoxy resin NC-3000 (Nippon Kayaku), 2.3 weight% of biphenyl type epoxy resin YX-4000 (Japan Epoxy Resin), phenol novolac resin DL- 0.2% by weight of biphenyl novolac resin MEH-7851S (Meiwa), 0.4% by weight of triphenyl phosphine (Hokko Chemical Co.) as a curing accelerator, 0.5% by weight of an inorganic filler having an average particle size of 45 μm 0.2% by weight of epoxy silane KBM-303 (Shin Etsu) as coupling agent, 0.2% by weight of aminosilane KBM-573 (Shin Etsu), 0.2% by weight of coloring agent carbon black MA-600B (manufactured by Mitsubishi Chemical Corporation) 0.2 By weight and 0.3% by weight of carnauba wax, which is a mold release agent, were melted and kneaded to prepare a resin composition for sealing a semiconductor device.

The melt-kneaded resin composition for encapsulating semiconductor devices was passed through a punching wire net having a hole size of 1.5 mm at a rotation speed of 2500 rpm to 5000 rpm to prepare particles. At this time, the temperature of the punching wire mesh was adjusted to 90 to 130 ° C.

Examples 2 to 4, Comparative Examples 1 and 2

A particle type epoxy resin composition for semiconductor encapsulation was prepared in the same manner as in Example 1, except that the hole size of the punching wire net was changed as shown in Table 1 below.

Component (% by weight) Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 The epoxy resin (a1) 7.1 7.1 7.1 7.1 7.1 7.1 The epoxy resin (a2) 2.3 2.3 2.3 2.3 2.3 2.3 The curing agent (b1) 3.5 3.5 3.5 3.5 3.5 3.5 The curing agent (b2) 0.2 0.2 0.2 0.2 0.2 0.2 Curing accelerator (C) 0.4 0.4 0.4 0.4 0.4 0.4 The inorganic filler (D) 85.6 85.6 85.6 85.6 85.6 85.6 The coupling agent (e1) 0.2 0.2 0.2 0.2 0.2 0.2 Coupling agent (e2) 0.2 0.2 0.2 0.2 0.2 0.2 The colorant (F) 0.2 0.2 0.2 0.2 0.2 0.2 Release agent (G) 0.3 0.3 0.3 0.3 0.3 0.3 Punching wire mesh
Hole size (mm) 1.5 1.2 0.5 0.75 3.2 One Punching wire mesh
Temperature (℃) 90 ~ 130 90 ~ 130 90 ~ 130 90 ~ 130 90 ~ 130 90 ~ 130 Rotation speed
(RPM) 2500 ~ 5000 2500 ~ 5000 2500 ~ 5000 2500 ~ 5000 2500 ~ 5000 2500 ~ 5000

After the angular misalignment of the particle-shaped epoxy resin composition for semiconductor encapsulation prepared in the above-described Examples and Comparative Examples was measured, physical properties were evaluated according to the following properties evaluation methods. The results are shown in Table 2 below.

&Lt; Property evaluation method &

(1) Particle shape

For 1 g of the particulate resin composition for sealing a semiconductor element prepared in Examples and Comparative Examples, the lengths of the long and short axes were measured three times using a microscope and the average value was measured. In the case of the long axis, the longest length is the representative value, and in the short axis, the shortest length is the representative value. And it is confirmed whether or not the calculated average value satisfies the following expression (1).

[Formula 1]

0.2 < (a / b) < 0.6

In the above formula (1), a is the short diameter of the particle cross section, and b is the long diameter of the particle cross section.

(2) Measurement method

The resin composition for sealing semiconductor elements in particle form prepared in Examples and Comparative Examples was measured for a specimen having a constant volume (15 cm ³ to 20 cm ³ ).

Referring to FIG. 1, each sample is transferred to a RESIN conveyor of a PMC-1040D COMPRESSION MOLD facility using a conveying device 101, and a flat surface 202 for measuring an angle of incidence is conveyed to a predetermined height (H = 5 cm) The angle (?) Between the outer peripheral point of the bottom surface of the composition and the cone apex is measured.

(3) Evaluation of occurrence of warpage

A semiconductor chip having an area ratio of 50% per individual unit on a circuit board was attached to a substrate using a die attach film, and the height of the resin composition for sealing a semiconductor device prepared in Examples and Comparative Examples could be 350 m After the heat treatment at 175 ℃ for 2HR, after the reflow process at PEAK temperature of 250 ℃, the surface of the PKG was coated with several micrometers of Pt on the surface of the PKG. Were measured.

(4) Evaluation of occurrence of wire sweep

Wire sweep semiconductor devices were compression-molded with PMC-1040D and wire sweeping was measured using TOSMICRON-S S4090IN X-ray. At this time, the diameter of the wire is 0.6 mil and the length is 3 mm.

(5) Compression Moldability Evaluation

The particulate resin composition for sealing a semiconductor element prepared in Examples and Comparative Examples was compression molded to prepare semiconductor package specimens, and compression moldability was evaluated according to the following criteria.

(Caking)

X: 1 kg of the epoxy resin composition was allowed to stand for 84 hours in a tub of 30 cm × 10 cm at 25 ° C. and 50% RH for 84 hours, and the weight of the sticky epoxy resin composition remaining on the sieve 1% or less.

(Feed defective)

◎: When the step of transferring the calculated weight of the epoxy resin composition to the molding stage in the compression mold equipment is repeated 50 times, no defective transfer occurs.

DELTA: Feed failure occurred 1 to 5 times

(Equipment pollution)

X: When the mold process for making 10 g of the epoxy resin composition by using a compression mold was conducted at 100 cylce, the epoxy resin composition was not adsorbed on the surface of the device for carrying the composition

△: When a mold process for making 10 g of an epoxy resin composition using a compression mold was conducted at 100 cylce, the epoxy resin composition adsorbed on the surface of the device for carrying the epoxy resin composition

Constituent Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Particle shape a (mm) 1.3 0.8 0.4 0.7 3.1 0.8 b (mm) 2.3 1.5 1.1 3.3 3.2 1.1 a / b 0.58 0.50 0.33 0.21 0.97 0.70 Illusion 41 44 51 57 33 36 Formability
(compression) caking X X X X X X Bad feeding ◎ ◎ ◎ △ ◎ ◎ Equipment pollution X X X △ X X Warpage occurrence thickness (탆) 9.4 9.6 8.4 9.5 13.1 13.1 Wire sweep 5% or more incidence (%) One 2 0 One 12 10

As shown in Table 2, it can be seen that the embodiment of the present invention can realize a composition having few defects such as deflection and wire sweep.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

Claims (11)

An epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, and having a viewing angle of not less than 40 degrees and in the form of particles.
The method according to claim 1,
Wherein the particle shape is a plate shape.
The method according to claim 1,
Wherein the particle shape is a polygonal columnar shape or a rectangular parallelepiped shape.
The method according to claim 1,
Wherein the particle shape satisfies the following formula 1:
[Formula 1]
0.2 < (a / b) < 0.6
In the above formula (1), a is the short diameter of the particle cross section, and b is the long diameter of the particle cross section.
The method according to claim 1,
Wherein a is 0.1 mm to 2 mm and b is 0.5 mm to 5 mm in the formula (1).
The method according to claim 1,
Wherein the inorganic filler comprises at least one of a fusible silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber Epoxy resin composition.
The method according to claim 1,
Wherein the inorganic filler has an average particle diameter of 40 to 50 占 퐉.
The method according to claim 1,
Wherein the epoxy resin composition for semiconductor device encapsulation comprises 2 to 15% by weight of an epoxy resin, 0.1 to 13% by weight of a curing agent, 0.01 to 2% by weight of a curing accelerator, and 70 to 95% By weight based on the total weight of the epoxy resin composition.
The method according to claim 1,
Wherein the epoxy resin composition for sealing a semiconductor element further comprises at least one of a colorant, a coupling agent, a releasing agent, a stress relieving agent, a crosslinking promoter, a leveling agent and a flame retardant.
A method for encapsulating a semiconductor device comprising the step of sprinkling an epoxy resin composition for sealing a semiconductor element according to claim 1 onto a semiconductor element, followed by compression molding.
A semiconductor element sealed with the semiconductor element epoxy resin composition according to claim 1.

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