CN107799392A - Black silicon, preparation technology and the MEMS preparation method based on black silicon - Google Patents

Black silicon, preparation technology and the MEMS preparation method based on black silicon Download PDF

Info

Publication number
CN107799392A
CN107799392A CN201710871041.1A CN201710871041A CN107799392A CN 107799392 A CN107799392 A CN 107799392A CN 201710871041 A CN201710871041 A CN 201710871041A CN 107799392 A CN107799392 A CN 107799392A
Authority
CN
China
Prior art keywords
black silicon
silicon
polymeric layer
back side
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710871041.1A
Other languages
Chinese (zh)
Other versions
CN107799392B (en
Inventor
毛海央
杨宇东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN201710871041.1A priority Critical patent/CN107799392B/en
Publication of CN107799392A publication Critical patent/CN107799392A/en
Application granted granted Critical
Publication of CN107799392B publication Critical patent/CN107799392B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

Abstract

Present disclose provides a kind of black silicon preparation technology, including：Polymeric layer is formed on a substrate；Polymeric layer is removed, and nanoforest structure is formed on the initial position of polymeric layer using the product removed during polymeric layer；And the deposit thin films of silicon material layer in nanoforest structure, complete black silicon and prepare.The disclosure additionally provides a kind of black silicon prepared using above-mentioned black silicon preparation technology and the above-mentioned MEMS preparation method based on black silicon.The black silicon of the disclosure, preparation technology and the MEMS preparation method based on black silicon, by using process costs are low, widely black silicon preparation technology prepares the higher black silicon of light absorpting ability for popularization degree and fitness, and black silicon is avoided during the release of MEMS by corrosion failure using the above-mentioned MEMS preparation method based on black silicon.

Description

Black silicon, preparation technology and the MEMS preparation method based on black silicon
Technical field
The disclosure belongs to field of nanometer technology, more particularly to a kind of black silicon, preparation technology and the MEMS based on black silicon Preparation method.
Background technology
Black silicon is a kind of large-area nano post/needle construction in forest shape, is once considered as a kind of leather of electronic industry circle Life property new material.Compared to traditional silicon materials, black silicon has high absorption efficiency to the light of visible ray near infrared band. The method for preparing black silicon having pointed out at present is varied, including high-energy fly secondary laser auxiliary etch, metal catalytic electrochemistry Corrosion and plasma dry etch etc..It is many for processing cost, the convenient degree of technique and processing compatibility etc. Consider, with plasma dry etch technology prepare the method for black silicon in conventional semiconductor process it is most-often used, but should Method or the preparation dependent on nanometer mask, or dependent on high energy implantation process, also or dependent on other special techniques at Reason, complex process degree are higher.Meanwhile thin film deposition processes and the ability of etching technics are limited to, it is black prepared by this method Silicon limited height, its light absorpting ability is caused also to be somewhat limited.
Have at present and black silicon is used as light absorption layer material to improve the method for MEMS performance：Forming MEMS After foundation structure (including dielectric support film, signal transformational structure, metal connecting structure etc.), pass through plasma enhanced chemical (PECVD) technology of vapour deposition grows α-Si or Poly-Si layers in surface deposition, carries out high energy ion injection to it, then Incomplete dry etching is carried out, and then is processed into black silicon and in uptake zone location graphic, finally carries out device architecture Release.In this method, the making of black silicon make use of endless full etching, thus the controllability of the structure snd size parameter of black silicon compared with It is low；And the ion implanting for needing to carry out silicon material layer high-energy before black silicon is prepared is added with introducing defect The complexity of technique.In addition, after this method PECVD α-Si or Poly-Si layers, employ " black silicon is leading, row after release " Technical thought, therefore the black silicon damage of strict protection is needed during structure release.However, black silicon still has silicon materials Physics, chemical property, therefore corrosion-vulnerable gas or corrosive liquid destroy during follow-up release；Again because of nano junction in black silicon Structure has certain height and density is larger, using the method for routine, such as thin-film deposition protection or gluing protection, can not realize It is effectively protected effect.
The content of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, present disclose provides a kind of black silicon, preparation technology and MEMS system based on black silicon Preparation Method, based on plasma, polymerization technique forms nanoforest structure on substrate and then combines silicon thin film material layer again Shape-retaining ability deposition process, develop a kind of new black silicon preparation technology, prepare the higher black silicon of light absorpting ability；Herein On the basis of, utilize the plasma compatibility between polymerization technique, silicon deposited film technique and conventional micro fabrication again, exploitation MEMS preparation method based on black silicon.
(2) technical scheme
According to an aspect of this disclosure, there is provided a kind of black silicon preparation technology, including：Polymer is formed on a substrate Layer；Remove the polymeric layer, and formed using the product removed during polymeric layer on the initial position of polymeric layer Nanoforest structure；And the deposit thin films of silicon material layer in the nanoforest structure, complete black silicon and prepare.
In some embodiments of the present disclosure, low-pressure chemical vapor deposition method or PECVD are utilized Deposition process deposit thin films of silicon material layer in the nanoforest structure.
In some embodiments of the present disclosure, the material of the silicon thin film is polysilicon, monocrystalline silicon or non-crystalline silicon.
In some embodiments of the present disclosure, the thickness of the silicon thin film material layer is 10~500nm.
In some embodiments of the present disclosure, the polymeric layer is removed, and utilize the production removed during polymeric layer Thing includes in the step of formation nanoforest structure on the initial position of polymeric layer：Removed and polymerize using plasma bombardment method Nitride layer；By plasma, polymerization technique is formed product during removal polymeric layer on the initial position of polymeric layer again Nanoforest structure；The nanoforest structure includes nano wire forest structure or nanofiber forest structure.
In some embodiments of the present disclosure, the nanoforest structure includes multiple structures alones, the structures alone Draw ratio be 2: 1~500: 1.
According to another aspect of the disclosure, there is provided a kind of black silicon, it is used described in any one of claim 1 to 6 Black silicon preparation technology is formed.
In some embodiments of the present disclosure, a diameter of 50~800nm of single nanostructured in the black silicon, highly it is 50nm~20um, density are 5~40/um2。
According to another aspect of the disclosure, there is provided a kind of MEMS preparation method based on black silicon, including：One MEMS sensor foundation structure is set on substrate, then sets MEMS sensor sensitive in the MEMS sensor foundation structure Structure；Polymeric layer is formed on MEMS sensor sensitive structure；The substrate is corroded, forms the back of the body of MEMS sensor Corrode cavity in face；Remove the polymeric layer, and using removing initial bit of the product during polymeric layer in polymeric layer Put and form nanoforest structure；And the deposit thin films of silicon material layer in the nanoforest structure, it is quick in MEMS sensor Black silicon is formed in sense structure.
It is described that substrate is corroded in some embodiments of the present disclosure, form the back side corrosion chamber of MEMS sensor The step of body, including：Front etch release is carried out to the substrate using front dry etching, forms the back side of MEMS sensor Corrode cavity；Or back side corrosion release is carried out to the substrate using back side wet etching or back side dry etching, form MEMS The back side corrosion cavity of sensor；Wherein, the substrate is carried out using back side wet etching or back side dry etching described Before the step of back side corrosion release, MEMS sensor foundation structure, MEMS sensor sensitive structure and polymeric layer are carried out Protection.
(3) beneficial effect
It can be seen from the above technical proposal that the black silicon of the disclosure, preparation technology and the MEMS preparation side based on black silicon Method at least has the advantages that one of them：
(1) preparation technology of the black silicon of the disclosure is mainly concerned with three steps：The setting of polymeric layer, nanoforest structure Preparation and silicon thin film material layer shape-retaining ability deposition, it belongs to parallel preparation technology, and quick large area batch can be achieved Processing, process costs are low, and all raw material involved by technical process and equipment are common used material in semiconductor processing And equipment, the popularization degree and applicability of technique are extensive；
(2) one layer of silicon thin film material layer and is in the prior art deposited on substrate, then silicon thin film material layer is performed etching Compared with forming the thin-film technique of black silicon, even tens microns of the reachable several microns of black silicon height prepared by the disclosure, black silicon Light absorpting ability is improved；
(3) in the MEMS preparation method based on black silicon, the method for taking " release leading, after black silicon row ", i.e. elder generation Corrosion release is carried out to substrate, re-forms black silicon, black silicon is avoided during release by corrosion failure；
(4) preparation of the black silicon of the disclosure and the MEMS based on black silicon prepare and are not related to making for metal nanoparticle With then metallic pollution will not be introduced in black silicon and MEMS；And it is not related to liquid environment in the preparation technology of black silicon Use, avoid destruction of the liquid environment to black silicon structure.
Brief description of the drawings
Fig. 1 is the cross-sectional view of substrate in the first embodiment of the present disclosure.
Fig. 2 is the cross-sectional view of the polymeric layer formed in the first embodiment of the present disclosure on substrate.
Fig. 3 is the cross-sectional view of the nanoforest structure formed in the first embodiment of the present disclosure on substrate.
Fig. 4 is SEM (the Scanning Electron of nanoforest structure in the first embodiment of the present disclosure Microscope) picture.
Fig. 5 is that the cross-section structure that deposit thin films of silicon is formed after black silicon in nanoforest structure in the first embodiment of the present disclosure shows It is intended to.
Fig. 6 is to carry out the cross-section structure that selective removal forms graphical black silicon in the first embodiment of the present disclosure to silicon thin film Schematic diagram.
Fig. 7 is the SEM pictures of black silicon in the first embodiment of the present disclosure.
Fig. 8 is to form MEMS sensor foundation structure and MEMS sensor sensitivity in the second embodiment of the present disclosure on substrate The cross-sectional view of structure.
Fig. 9 is that the cross-section structure for forming polymeric layer in the second embodiment of the present disclosure on MEMS sensor sensitive structure shows It is intended to.
Figure 10 a are to carry out back side corrosion release in the second embodiment of the present disclosure to MEMS sensor using back side wet etching The cross-sectional view of back side corrosion cavity is formed afterwards.
Figure 10 b are to carry out back side corrosion release in the second embodiment of the present disclosure to MEMS sensor using back side dry etching The cross-sectional view of back side corrosion cavity is formed afterwards.
Figure 11 is to form nanoforest knot on the MEMS sensor sensitive structure in the second embodiment of the present disclosure upon discharge The cross-sectional view of structure.
After Figure 12 a is deposit thin films of silicon material layer form black silicon in nanoforest structure in the second embodiment of the present disclosure The release of cross-sectional view, wherein MEMS sensor uses back side wet etching.
After Figure 12 b is deposit thin films of silicon material layer form black silicon in nanoforest structure in the second embodiment of the present disclosure The release of cross-sectional view, wherein MEMS sensor uses back side dry etching.
Figure 13 is on polymeric layer, MEMS sensor sensitive structure, MEMS sensor basis in the third embodiment of the present disclosure The cross-sectional view of front etch release aperture is formed in structure.
Figure 14 is to form back side corrosion cavity after front dry etching release liners are used in the third embodiment of the present disclosure Cross-sectional view.
Figure 15 is the section for forming nanoforest structure in the third embodiment of the present disclosure on MEMS sensor sensitive structure Structural representation.
After Figure 16 is deposit thin films of silicon material layer forms black silicon in nanoforest structure in the third embodiment of the present disclosure Cross-sectional view.
【Symbol description】
101,102- substrates；
201- polymeric layers；
301,302- nanoforest structures；
401,402- silicon thin film material layers；
103- sensor integration structures；
104- transducer sensitive structures；
Corrode cavity in 105,106, the 502- back sides；
501- front etch release apertures.
Embodiment
For the purpose, technical scheme and advantage of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference Accompanying drawing, the disclosure is further described.
It should be noted that in accompanying drawing or specification description, similar or identical part all uses identical figure number.It is attached The implementation for not illustrating or describing in figure, it is form known to a person of ordinary skill in the art in art.In addition, though this Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is worth accordingly without being definitely equal to, but be able to can connect The error margin received is similar to be worth accordingly in design constraint.The direction term mentioned in embodiment, such as " on ", " under ", "front", "rear", "left", "right" etc., only it is the direction of refer to the attached drawing, is not used for limiting the protection domain of the disclosure.
First, first embodiment
Present disclose provides a kind of black silicon preparation technology, comprise the following steps：
Step A1：As shown in Figure 1, there is provided substrate 101.
Further, the substrate includes silicon, glass, quartz, polymer；The substrate is not limited to above-mentioned four kinds, can be Any substrate commonly used in microelectronic technique.The substrate can be 4 cun, 6 cun, 8 cun, 12 cun of disks, and other be applied to The different shape of micro fabrication and the substrate slice of size.
In the present embodiment, using 4 inches of monocrystalline silicon silicon substrate.
Step A2：Polymeric layer 201 is formed on the substrate 101.
Further, the material of the polymeric layer includes photoresist, dimethyl silicone polymer, Parylene, poly- second Alkene, makrolon, can also be the polymeric layer material that other can be removed by plasma bombardment method；
The polymeric layer can be arranged on the substrate 101 by modes such as spraying, spin coating, stickup, impressing solidifications, Substrate can be completely covered in the polymeric layer, can also be further graphical.
In the present embodiment, the material of polymeric layer uses polyimides photoresist, and uses spin-coating method by polyimides light Photoresist is set on a silicon substrate；Further, the present embodiment forms patterned polymeric layer on substrate, as shown in Figure 2.
More specifically, step A2 includes following sub-step：
Sub-step A21：Polymeric layer is arranged on 4 cun of disk silicon substrates using the method for spin coating, will circle after spin coating Piece substrate is placed on 120 degree of hot plate and bakeed 20 minutes；
Further, in spin coating process, the rotating speed used is 3000rpm, spin-coating time 30s, polyimides photoresist The thickness of layer is about 5um；
Sub-step A22：Polyimides photoresist is exposed；
Further, the ultraviolet light wave a length of 365nm, time for exposure 80s, exposure dose 6mJ/s used during exposure；
Sub-step A23：Disk is placed in CD26 developer solutions after exposure and developed, developing time 38s；
Sub-step A24：After development, patterned disk is placed in progress 7min in oxygen gas plasma stripping machine and sweeps counterdie Processing, remove the polyimides photoresist film layer that figure is remained with external position；
Further, when carrying out sweeping counterdie processing, oxygen pressure 0.48Pa, equipment forward power is 500W, reverse work( Rate is 0W, and temperature is 70 DEG C；
Sub-step A25：40min is dried after disk is positioned in 140 DEG C of baking oven, carries out post bake, is formed patterned poly- Compound layer.
Step A3：Remove polymeric layer completely, and using the product removed during polymeric layer polymeric layer just Beginning position formation nanoforest structure 301.
Further, in step A3, using plasma blast technique realizes the complete removal to polymeric layer；Remove poly- By plasma, polymerization technique is formed portion of product during compound layer on substrate on the initial position of polymeric layer again Nanoforest structure.
Further, the plasma bombardment include using oxygen plasma, argon plasma, nitrogen plasma it is each From the alternating bombardment after bombardment processing and combination of two, when using plasma bombards polymeric layer, radio-frequency power 50- 500W, gas flow 10-200sccm, bombardment time 2-200min.The disclosure is not limited to three kinds of above-mentioned plasmas, It can also be the plasma that other can be bombarded polymeric layer.
Further, the nanoforest structure is the one-dimensional nano structure of large area, and the nanoforest structure includes Nano wire forest structure or nanofiber forest structure；
In the present embodiment, bombarded, oxygen flow 50sccm, power 200W, located using oxygen plasma first The reason time is 9min, is then handled using argon plasma, argon flow amount 20sccm, power 200W, processing time For 25min.
Further, the nanoforest structure includes multiple structures alones, the draw ratio 2: 1~500 of the structures alone: 1；The structures alone refers to single nanostructured in nanoforest structure, i.e., single nano wire or single nanofiber.Fig. 3 and Fig. 4 is the cross-sectional view and SEM (Scanning Electron of nanoforest structure in first embodiment Microscope) picture.
Step A4：The deposit thin films of silicon material layer 401 in nanoforest structure 301.
Further, the material of the silicon thin film material layer includes polysilicon, monocrystalline silicon, non-crystalline silicon, the silicon thin film material The thickness of the bed of material is 10-500nm, and the thickness of silicon thin film material layer is influenceed by height, the density of nanometer forest structure, while by The technological parameter of deposit thin films of silicon material layer determines.
The method of the deposit thin films of silicon material layer includes low-pressure chemical vapor deposition (LPCVD) or plasma enhancing Learn vapour deposition (PECVD).
In the present embodiment, as shown in figure 5, deposited amorphous silicon membrane material in nanoforest structure using PECVD methods The bed of material.In amorphous silicon thin-film materials layer deposition process, cavity temperature is 150-350 degree, chamber pressure 5-50Pa, radio frequency work( Rate is 5-20W, and the flow of silane is 1-50sccm.In the present embodiment, selection cavity temperature is 240 degree, pressure 30Pa, power Flow for 10W, silane gas is 5sccm.
During deposition of amorphous silicon films material layer, using side wall technique, outside in nanoforest structure surrounds One layer of non-crystalline silicon spacer material layer.Nanoforest structure is completely covered by using silicon thin film material layer, in its surface shape The silicon thin film relatively compact into one layer.In the disclosure, the silicon thin film material layer of nanoforest body structure surface deposition has well Shape-retaining ability, i.e., in the fully wrapped around nanoforest structure of any height and position silicon-on, form good black silicon structure.
The preparation process of the black silicon of the disclosure is related to three key steps：The setting of polymeric layer, nanoforest structure Preparing and the shape-retaining ability of silicon thin film material layer deposits, these three steps belong to parallel preparation technology, and process is extremely simple, Quick large area batch machining can be achieved, process costs are low, and all raw material involved by technical process and equipment are half It is common used material and equipment in semiconductor process, the popularization degree and applicability of technique are wide.
In addition, if polymeric layer is completely covered substrate in the disclosure, after deposit thin films of silicon material layer, whole substrate surface It is respectively formed black silicon structure；In the present embodiment, because what is formed on substrate is patterned polymeric layer, so deposit thin films of silicon , will be directly by silicon thin film not by the substrate of polymeric layer covering, i.e. position beyond nanoforest structure graph after material layer Material layer covers.Therefore, selective removal can be carried out to the silicon thin film material layer beyond black silicon area, that is, obtained patterned black Silicon, as shown in Figure 6.
Further, original graphical nanoforest structure is the support frame of silicon thin film material layer, deposited amorphous silicon After film material plies, this position can be observed in visible-range black is presented, i.e., obtained in the position patterned Black silicon.And the position beyond nanoforest structure graph, only cover one layer of silicon thin film material, presentation is thickness therewith The particular color to match, this just forms the selectivity of optical characteristics inside and outside graphical black silicon.For specific optics MEMS sensor, this characteristic can be utilized to realize the brand-new function of sensor.
Fig. 7 is the SEM pictures of black silicon prepared in the present embodiment, single nanostructured in the black silicon prepared by the disclosure Diameter range is 50~800nm, is highly 50nm~20um, and the distribution density of black silicon is 5~40/um2；In the black silicon Single nanostructured is a nano structured unit in black silicon, such as the single nano-pillar shown in Fig. 7.Due to single in black silicon The height of nanostructured is 50nm~20um, even tens microns of the reachable several microns of black silicon height prepared by the disclosure, therefore Black silicon prepared by the disclosure has more preferable optical absorption characteristics, and is not related to the use of liquid environment in the preparation technology of black silicon, Avoid destruction of the liquid environment to black silicon structure.
2nd, second embodiment
The disclosure provides a kind of preparation method of the MEMS sensor based on black silicon, and this method comprises the following steps：
Step B1：Substrate 102 is provided；
Further, the substrate 102 is identical with the choosing method of the material of substrate 101 in first embodiment.
Step B2：As shown in figure 8, setting MEMS sensor foundation structure 103 on the substrate 102, then sensed in MEMS MEMS sensor sensitive structure 104 is set in device foundation structure 103.
Further, sensor integration structure and sensor sensing knot are generally provided with the MEMS sensor part Structure, wherein, the transducer sensitive structure is used to experience measurand, and exports the physical quantity for having determination relation with being measured Signal；The physical quantity signal that the transducer sensitive structure exports is converted into the letter of required form by the sensor integration structure Breath.
In the present embodiment, MEMS sensor is chosen for thermoelectric pile MEMS infrared sensing devices, wherein the sensor integration Structure includes thermocouple cascaded structure, and transducer sensitive structure is silicon nitride film material layer；Wherein, the silicon nitride film material The bed of material is used to absorb infra-red radiation and is converted into heat, and the heat of the transducer sensitive structure output causes thermocouple cascaded structure The temperature difference at both ends, cause the generation of thermoelectromotive force.
Step B3：As shown in figure 9, polymeric layer 201 is set on transducer sensitive structure.
Further, step B3 process and method and step A2 in first embodiment are similar.
Nitrogenized in the present embodiment using whirl coating (including spin coating, front baking) and photoetching (including expose, develop, drying afterwards) technique Polymeric layer is set in silicon thin film material layer；
Step B4：Back side corrosion release is carried out to the substrate 102 of MEMS sensor, forms the back side corrosion of MEMS sensor Cavity.
Further, MEMS sensor part can form the back side by back side wet etching or back side dry etching on substrate Corrode cavity, can also use other to carry out the side that back side corrosion release forms back side corrosion cavity to MEMS sensor substrate Method.Figure 10 a and Figure 10 b are respectively that back side corrosion release is carried out to substrate 102 using back side wet etching and back side dry etching The cross-sectional view of back side corrosion cavity 105,106 is formed afterwards.
In the present embodiment, back side potassium hydroxide (KOH) wet etching and back side deep silicon etching (DRIE) has been respectively adopted Method carries out back side corrosion release to the substrate 102 of sensor.Before KOH wet etchings are carried out, first to MEMS sensor front Structure is protected, in order to avoid positive MEMS sensor foundation structure, MEMS sensor sensitive structure and poly- in corrosion process Compound layer is destroyed by corrosive liquid.Similarly, when carrying out back side deep silicon etching, it is also desirable to carry out suitably protecting to Facad structure.
Further, for the KOH wet etchings：After polymeric layer is set in the silicon nitride film material layer, The graphical of back side corrosion cavity hatch is carried out at the wafer substrate back side using two-sided alignment photoetching process, then to polymeric layer Figure carries out front protecting, and disk is placed in KOH corrosive liquids and carries out back side corrosion release, in corrosion to sensor integration knot After structure, corrosion occurs and is automatically stopped.
For back side deep silicon etching technique：When carrying out back side corrosion release, monitored by etch period and reacting gas, By etching stopping on sensor integration structure sheaf.
Step B5：As shown in figure 11, after removing front protecting device, plasma bombardment method is recycled to remove the polymerization Nitride layer, and nanoforest structure 302 is formed on the initial position of polymeric layer using the product removed during polymeric layer.
Step B6：The deposit thin films of silicon material layer in nanoforest structure 302, is formed on MEMS sensor sensitive structure Black silicon.
Further, Figure 12 a and Figure 12 b be the second embodiment of the present disclosure in nanoforest structure deposit thin films of silicon material Cross-sectional view after the bed of material, both different release in the sensor in Figure 12 a using back side wet etching, Using back side dry etching in Figure 12 b.Reference picture 12a and Figure 12 b, after deposit thin films of silicon material layer, to silicon thin film material Layer 402 carries out selective removal and obtains graphical black silicon.
Further, step B5 and step B6 method are identical with the step A3 in first embodiment and step A4.
Handled by process above, realize the MEMS based on black silicon and prepare.
3rd, 3rd embodiment
The MEMS preparation method based on black silicon provided in the present embodiment, the difference with second embodiment be, this Embodiment is using front release process corrosion substrate, and cavity is corroded at the back side for forming MEMS sensor, and this method includes following step Suddenly：
Step C1 to step C3 is identical to step B3 with step B1.
Step C4：As shown in figure 13, set in the polymeric layer, transducer sensitive structure, sensor integration structure Front etch release aperture 501.
Further, the front etch release aperture is prepared by photoetching or etching technics, the front etch release aperture The graphical polymeric layer of break-through, transducer sensitive structure and sensor integration structure, connect with substrate 102.
Step C5：As shown in figure 14, front etch release is carried out to substrate 102 using front dry etching, forms MEMS The back side corrosion cavity 502 of device.
In the present embodiment, front etch release is carried out to substrate using fluorination xenon-133 gas, can also use other corrosivity gas Body carries out corrosion release to substrate；It is described that substrate progress front etch release is referred to disk being placed in xenon fluoride gas cavity It is interior, in corrosion process, fluorination xenon-133 gas is contacted by front etch release aperture with substrate 102, progressively corrode substrate 102.With The progress of corrosion process, discharges small cavity in each corrosion release aperture hemispherical formed below；Discharged in lasting corrosion Cheng Zhong, each independent hemispherical discharge small cavity and are connected with each other, and one is progressively formed under sensor integration structure sheaf links up The back side corrosion cavity 502.
In the present embodiment, release depth is about 20 microns, and the distance between release aperture is suitable with release depth, and this setting is In order to prevent the spacing between release aperture excessive, cause to form the endless all positon of release between release aperture, cause MEMS sensor Failure.
Further, the distance between release depth and release aperture are not limited to 20 microns, the size of release aperture and release Depth is related, because forming hemispheric structure during release, as long as hemispherical all after meeting release discharges small cavity two-by-two Interconnection, a continuous cavity is formed, does not influence the realization of the disclosure.
Step C6：As shown in figure 15, the polymeric layer is removed using plasma bombardment method, and utilizes and remove polymer Product during layer forms nanoforest structure 302 on the initial position of polymeric layer.
Further, the front etch release to substrate is before the formation of nanoforest structure, without special protection nanometer Forest structure, black silicon is it also avoid by corrosion failure.
Step C7：As shown in figure 16, the deposit thin films of silicon material layer in nanoforest structure, forms black silicon.
Handled by process above, realize the MEMS based on black silicon and prepare.
Further, in second embodiment and 3rd embodiment, the front etch release and back side corrosion release point Do not refer to from the upper and lower surface of substrate and carry out corrosion release MEMS；The back side corrosion cavity of the MEMS, it is Refer to no matter front etch release or the back side corrosion discharge, the cavity ultimately formed is at the back side of MEMS.
In the disclosure, MEMS sensor is not limited to the optical sensor in embodiment, because black silicon can also show very More other characteristics, including super-hydrophobicity (self-cleaning function), surface enhanced characteristic, molecular surface characterization of adsorption, Flied emission etc., can The different qualities showed in different directions according to black silicon, it is applied in other MEMSs.
In the MEMS preparation method based on black silicon, the method for taking " release leading, after black silicon row ", i.e., first to lining Bottom is corroded, and re-forms black silicon, and black silicon is avoided during release by corrosion failure.
Further, the preparation of black silicon and the MEMS based on black silicon prepare and are not related to metal nano in the disclosure The use of particle, metallic pollution will not be then introduced in MEMS.
So far, the present embodiment is described in detail combined accompanying drawing.According to above description, those skilled in the art Should black silicon a kind of to the disclosure, preparation technology and the MEMS preparation method based on black silicon have clear understanding.
It should be noted that in accompanying drawing or specification text, the implementation that does not illustrate or describe is affiliated technology Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously Various concrete structures, shape or the mode mentioned in embodiment are not limited only to, those of ordinary skill in the art can be carried out more to it Change or replace.
It should also be noted that, the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc. In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment To term, such as " on ", " under ", "front", "rear", "left", "right" etc., only it is the direction of refer to the attached drawing, is not used for limiting this Disclosed protection domain.
Particular embodiments described above, the purpose, technical scheme and beneficial effect of the disclosure are carried out further in detail Describe in detail bright, should be understood that the specific embodiment that the foregoing is only the disclosure, be not limited to the disclosure, it is all Within the spirit and principle of the disclosure, any modification, equivalent substitution and improvements done etc., the guarantor of the disclosure should be included in Within the scope of shield.

Claims (10)

1. a kind of black silicon preparation technology, including：
Polymeric layer is formed on a substrate；
Remove the polymeric layer, and formed using the product removed during polymeric layer on the initial position of polymeric layer Nanoforest structure；And
The deposit thin films of silicon material layer in the nanoforest structure, complete black silicon and prepare.
2. black silicon preparation technology according to claim 1, wherein, utilize low-pressure chemical vapor deposition method or plasma Strengthen chemical gaseous phase depositing process deposit thin films of silicon material layer in the nanoforest structure.
3. black silicon preparation technology according to claim 1, wherein, the material of the silicon thin film is polysilicon, monocrystalline silicon or Non-crystalline silicon.
4. black silicon preparation technology according to claim 1, wherein, the thickness of the silicon thin film material layer is 10~500nm.
5. black silicon preparation technology according to claim 1, wherein, the polymeric layer is removed, and utilize and remove polymer Product during layer includes in the step of formation nanoforest structure on the initial position of polymeric layer：
Polymeric layer is removed using plasma bombardment method；
By plasma, polymerization technique is formed product during removal polymeric layer on the initial position of polymeric layer again Nanoforest structure；The nanoforest structure includes nano wire forest structure or nanofiber forest structure.
6. black silicon preparation technology according to claim 1, wherein, the nanoforest structure includes multiple structures alones, The draw ratio of the structures alone is 2: 1~500: 1.
7. a kind of black silicon, it uses the black silicon preparation technology described in any one of claim 1 to 6 to be formed.
8. black silicon according to claim 7, wherein, a diameter of 50~800nm of single nanostructured in the black silicon is high It is 5~40/um to spend for 50nm~20um, density2。
9. a kind of MEMS preparation method based on black silicon, including：
MEMS sensor foundation structure is set on a substrate, then sets MEMS to pass in the MEMS sensor foundation structure Sensor sensitive structure；
Polymeric layer is formed on MEMS sensor sensitive structure；
The substrate is corroded, forms the back side corrosion cavity of MEMS sensor；
Remove the polymeric layer, and formed using the product removed during polymeric layer on the initial position of polymeric layer Nanoforest structure；And
The deposit thin films of silicon material layer in the nanoforest structure, forms black silicon on MEMS sensor sensitive structure.
10. the MEMS preparation method according to claim 9 based on black silicon, wherein, it is described that substrate is corroded, The step of forming the back side corrosion cavity of MEMS sensor, including：
Front etch release is carried out to the substrate using front dry etching, forms the back side corrosion cavity of MEMS sensor； Or
Back side corrosion release is carried out to the substrate using back side wet etching or back side dry etching, forms MEMS sensor Corrode cavity in the back side；Wherein, back side corrosion is carried out to the substrate using back side wet etching or back side dry etching described Before the step of release, MEMS sensor foundation structure, MEMS sensor sensitive structure and polymeric layer are protected.
CN201710871041.1A 2017-09-22 2017-09-22 Black silicon, preparation process and preparation method of MEMS device based on black silicon Active CN107799392B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710871041.1A CN107799392B (en) 2017-09-22 2017-09-22 Black silicon, preparation process and preparation method of MEMS device based on black silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710871041.1A CN107799392B (en) 2017-09-22 2017-09-22 Black silicon, preparation process and preparation method of MEMS device based on black silicon

Publications (2)

Publication Number Publication Date
CN107799392A true CN107799392A (en) 2018-03-13
CN107799392B CN107799392B (en) 2020-12-11

Family

ID=61532339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710871041.1A Active CN107799392B (en) 2017-09-22 2017-09-22 Black silicon, preparation process and preparation method of MEMS device based on black silicon

Country Status (1)

Country Link
CN (1) CN107799392B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110165043A (en) * 2019-05-17 2019-08-23 中国科学院上海微系统与信息技术研究所 A kind of pyroelectric infrared detector and preparation method thereof based on black film
CN111422822A (en) * 2020-04-03 2020-07-17 苏州研材微纳科技有限公司 Preparation process of nano forest getter
CN111896121A (en) * 2020-07-13 2020-11-06 无锡物联网创新中心有限公司 MEMS thermopile infrared detector
CN111924796A (en) * 2020-07-13 2020-11-13 无锡物联网创新中心有限公司 Preparation method of MEMS thermopile infrared detector

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103153538A (en) * 2010-10-15 2013-06-12 3M创新有限公司 Abrasive articles
CN103245421A (en) * 2013-05-16 2013-08-14 江苏物联网研究发展中心 Pyrogenicity type MEMS (micro-electro-mechanical system) thermopile infrared detector structure and manufacturing method thereof
US8574942B2 (en) * 2010-05-07 2013-11-05 Unist Academy-Industry Research Corporation Method of forming silicon nanowires and method of fabricating lithium secondary battery using the same
CN103708413A (en) * 2013-12-27 2014-04-09 安徽师范大学 Method for preparing one-dimensional silicon nanostructure array on surface of optical fiber
US20150280023A1 (en) * 2011-06-15 2015-10-01 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
CN105084305A (en) * 2015-06-17 2015-11-25 中国科学院微电子研究所 Nano-structure and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574942B2 (en) * 2010-05-07 2013-11-05 Unist Academy-Industry Research Corporation Method of forming silicon nanowires and method of fabricating lithium secondary battery using the same
CN103153538A (en) * 2010-10-15 2013-06-12 3M创新有限公司 Abrasive articles
US20150280023A1 (en) * 2011-06-15 2015-10-01 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
CN103245421A (en) * 2013-05-16 2013-08-14 江苏物联网研究发展中心 Pyrogenicity type MEMS (micro-electro-mechanical system) thermopile infrared detector structure and manufacturing method thereof
CN103708413A (en) * 2013-12-27 2014-04-09 安徽师范大学 Method for preparing one-dimensional silicon nanostructure array on surface of optical fiber
CN105084305A (en) * 2015-06-17 2015-11-25 中国科学院微电子研究所 Nano-structure and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110165043A (en) * 2019-05-17 2019-08-23 中国科学院上海微系统与信息技术研究所 A kind of pyroelectric infrared detector and preparation method thereof based on black film
CN111422822A (en) * 2020-04-03 2020-07-17 苏州研材微纳科技有限公司 Preparation process of nano forest getter
CN111422822B (en) * 2020-04-03 2023-09-01 苏州研材微纳科技有限公司 Preparation process of nano forest getter
CN111896121A (en) * 2020-07-13 2020-11-06 无锡物联网创新中心有限公司 MEMS thermopile infrared detector
CN111924796A (en) * 2020-07-13 2020-11-13 无锡物联网创新中心有限公司 Preparation method of MEMS thermopile infrared detector

Also Published As

Publication number Publication date
CN107799392B (en) 2020-12-11

Similar Documents

Publication Publication Date Title
CN107799392A (en) Black silicon, preparation technology and the MEMS preparation method based on black silicon
CN107991768A (en) MEMS optics, light-absorption nano structure and preparation method thereof
Smith et al. Resistive graphene humidity sensors with rapid and direct electrical readout
JP4944989B2 (en) Method for synthesizing ITO electron beam resist and method for forming ITO pattern using the same
CN107073891A (en) Silane coupler layer stackup polymeric membrane
CN104142530A (en) Preparation method of metal nanometer interdigital optical grating
CN105547464B (en) MEMS piezoelectric vector hydrophone with cascaded structure and preparation method thereof
CN103765603A (en) Production method using dry etching of glass substrate having concave-convex film, glass substrate having concave-convex film, solar cell, and production method for solar cell
CN102243435A (en) Method for preparing micro-nanometer fluid system through compound developing of positive and negative photoresists
US20020185169A1 (en) Thermo pile infrared ray sensor manufactured with screen print and method thereof
CN108217578A (en) A kind of preparation method of micro-nano warp architecture
Han et al. Parylene-diaphragm piezoelectric acoustic transducers
CN109799002B (en) All-optical tuning temperature sensor and preparation method thereof
CN105858597B (en) Preparation method of the suspended metal nano gap to structure
CN102629552B (en) Silicon germanium film parallel transfer method applied to uncooled infrared focal plane
CN104332392B (en) A kind of anisotropic dry etch VO2Method
CN104392902A (en) Method for positioned cutting multi-walled carbon nanotubes
CN107359217A (en) A kind of quick response ultraviolet light detector and preparation method
Di Mundo et al. Single‐Step Plasma Process Producing Anti‐Reflective and Photovoltaic Behavior on Crystalline Silicon
CN106185784A (en) MEMS infrared light supply based on wet method pre-release structure and preparation method thereof
CN108447979B (en) Piezoelectric film sensor and preparation method thereof
AU2006201341B2 (en) Anti-reflective substrate and the manufacturing method thereof
CN110182754B (en) Micro-heater with micro-nano structure enhancement and preparation method thereof
CN115615937A (en) High-quality-factor photonic crystal sensor, preparation method thereof and sensing detection method
CN108279320A (en) One kind is based on Fano resonance nano optical wave guide accelerometer preparation methods

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant