CN108279320A - One kind is based on Fano resonance nano optical wave guide accelerometer preparation methods - Google Patents
One kind is based on Fano resonance nano optical wave guide accelerometer preparation methods Download PDFInfo
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- CN108279320A CN108279320A CN201810133315.1A CN201810133315A CN108279320A CN 108279320 A CN108279320 A CN 108279320A CN 201810133315 A CN201810133315 A CN 201810133315A CN 108279320 A CN108279320 A CN 108279320A
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- photoresist
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- accelerometer
- soi substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
Abstract
Optical field and micro optoelectro mechanical system field are particularly belonged to based on Fano resonance nano optical wave guide accelerometer principles and manufacturing process the present invention relates to a kind of, it is specially a kind of based on Fano resonance nano optical wave guide accelerometer preparation methods.The present invention provides one kind based on Fano resonance nano optical wave guide accelerometer preparation methods, the present invention is using SOI materials as sensing element and base material, based on the feature that high Q optics micro-loop chamber is highly sensitive, and SOI materials high refractive index, the advantages that optical confinement ability is strong, transmission loss is small, easy of integration, using integrated nanometer optical waveguide technique, it proposes the nano optical wave guide accelerometer to resonate based on Fano, the optical accelerometer with highly sensitive impact property is realized by power optical coupling effect.
Description
Technical field
The present invention relates to one kind based on Fano resonance nano optical wave guide accelerometer principles and manufacturing process, particularly belongs to light
Field and micro optoelectro mechanical system field, it is specially a kind of based on Fano resonance nano optical wave guide accelerometer preparation methods.
Background technology
Accelerometer (accelerometer) is a kind of inertia device for measuring acceleration, is to constitute not depending on to defend
The core measuring unit of the inertial navigation system of star.From automobile air-bag system control, seismic monitoring, Aeronautics and Astronautics device is arrived
And the inertial navigation system of pilotless automobile, then gravity sensing and screen automatic rotation function etc. to mobile phone peace plate computer
It is all be unable to do without the effect of accelerometer, accelerometer has become an essential part in our daily lifes.
Traditional mems accelerometer is limited by environment, volume and self attributes, cannot be satisfied modern industry and
Demand of the military developments to high-sensitivity accelerometer.And gleam dynamoelectric acceleration gauge MOEMS may be implemented by the characteristic of light
Faster than mems accelerometer response device speed, integrated level higher, controllability are stronger, inhibit noise immune and electromagnetism interference
Ability system device more outstanding.
Invention content
The present invention provides one kind based on Fano resonance nano optical wave guide accelerometer preparation methods, and the present invention is with SOI materials
Material is used as sensing element and base material, based on the highly sensitive feature of high Q optics micro-loop chamber and SOI materials high refractive index, light
The advantages that limitation capability is strong, transmission loss is small, easy of integration is learned, using integrated nanometer optical waveguide technique, proposes to resonate based on Fano
Nano optical wave guide accelerometer, pass through power-optical coupling effect and realize the optical accelerometer with highly sensitive impact property.
The present invention adopts the following technical scheme that realization：One kind is based on Fano resonance nano optical wave guide accelerometer systems
Preparation Method includes the following steps：
The first step, SOI Substrate pretreatment：SOI Substrate is cleaned by ultrasonic, is then rinsed with deionized water, is dried up through nitrogen；
Second step, high temperature modified and stress relieving by annealing：Pretreated SOI Substrate is toasted, to remove on substrate
Steam increases the adhesiveness between photoresist and substrate, keeps spin coating more uniform, meanwhile, after the completion of baking will to substrate into
The processing of row stress relieving by annealing；
Third walks, spin coating：The resist coating in above-mentioned SOI Substrate top layer silicon；
4th step, front baking：SOI Substrate is toasted after the completion of spin coating, fully evaporates the solvent in photoresist, reduces high speed
Photoresist membrane stress when rotation, avoids photoresist from being layered；
5th step, photoetching：The photoresist of electron beam alignment mark is exposed using mask；
6th step, development：SOI Substrate after exposure is put into developer solution and is developed, oxygen plasma is used after the completion of development
Resist remover handles substrate, removes the photoresist of exposure, while enhancing the adhesion strength of metal and SOI Substrate；
7th step, electron beam evaporation and stripping：Using electron beam evaporation titanizing and gold, it is then placed in acetone soln and impregnates, then
Ultrasonic vibration removes the metal other than alignment mark with tweezers in acetone soln, and removes remaining photoresist, finally obtains double
Cross alignment key pattern；
8th step, spin coating and electron beam lithography：Then the spin coating on the SOI Substrate for obtaining diesis alignment key pattern carries out
Electron beam exposure is exposed the photoresist at annular chamber and waveguiding structure；
9th step, development：SOI Substrate after above-mentioned exposure is put into developer solution and is developed, oxygen etc. is used after the completion of development
Ion resist remover handles substrate, removes the photoresist of exposure；
Tenth step, ICP deep silicon etchings：Using sense coupling, annular chamber and waveguide are obtained in top layer silicon
Structure, waveguiding structure include straight wave guide and two Y waveguides, straight wave guide include connect two Y waveguide stem bifurcateds straight wave guide and with
The straight wave guide that two Y waveguide tail portions are separately connected is gone wherein a straight wave guide of connection Y waveguide stem bifurcated is coupled with annular chamber
Except remaining photoresist；
11st step, spin coating, photoetching, development, ICP deep silicon etchings, grating is obtained on the straight wave guide of two Y waveguides, 2 tail portion；
12nd step, spin coating, photoetching and development：Spin coating, photoetching and development on the SOI Substrate for obtain grating, will be outside annular chamber
The photoresist enclosed is got rid of；
13rd step, it is rear to dry：After the completion of development, SOI Substrate is placed in and dries baking processing after progress on platform, removes post-develop photoresist
Interior residual solvent improves the adhesiveness of photoresist and anti-etching ability；
14th step, ICP deep silicon etchings：Using sense coupling, the top layer silicon of annular chamber periphery is etched away,
15th step, RIE etchings：The intermediate silicon dioxide layer exposed is performed etching, the inspection being located at below annular chamber is formed
Mass metering block and tie-beam（Intermediate silicon dioxide layer after connecting detection mass block and etching）, and form the logical of bottom silicon etching
Road；
16th step, ICP isotropic deep silicon etchings：ICP isotropics deep silicon etching used, removes passivating process therein,
Utilize SF6Gas enters base silicon by the channel previously etched, is performed etching to base silicon, becomes to discharge tie-beam
The SiO 2 cantilever detection mass block hanging with formation, removes photoresist；
Modulate circuit is integrated in the arrangements of accelerometers that etching is completed using MEMS technology, realizes nanometer light by the 17th step
The preparation of waveguide accelerometer, modulate circuit include electrode 5, input unit 12 and probe unit 7.
Accelerometer basic principle is：Light source is divided into two-way after the straight wave guide grating incidence of side by Y waveguide, wherein
Light is exported through straight wave guide all the way；Another way light is coupled through straight wave guide with annular chamber.When in the eigenfrequency and straight wave guide of annular chamber
The frequency of transmission light generates resonance when close, and the spectrum of another light path and the spectrum of resonant optical path are interfered in Y waveguide and produced
Raw Fano resonance；Annular chamber on a cantilever beam, when force effect outside system senses, annular chamber with wherein the coupling spacing of light is sent out all the way
Raw slight change causes Fano Resonance Transmissions spectral line in transmission spectrum that significant changes occur, by the luminous intensity for measuring transmission peak value
Variation can calculate acceleration value.
The present invention compared with prior art, has an advantageous effect in that：
（1）The present invention propose a kind of compact-sized, fast response time, high resolution, low-power consumption Fano resonance accelerometers,
Especially on piece integrated-type hypersensitivity accelerometer has important meaning for the development of integrated optics accelerometer technology
Justice.
（2）Present invention proposition can generate very precipitous Resonance Transmission spectral line using Fano resonator systems, and very little adds
Velocity variations will make the luminous intensity of output occur significantly to change the detection, it can be achieved that hypersensitivity acceleration.
（3）Device of the present invention can use integrated nanometer optical waveguide technique to make, at low cost, and performance is high, and loss is small, with tradition
CMOS technology perfection compatibility, it is simple in structure, be easy to make, have large-scale production potentiality.
Description of the drawings
Fig. 1 is nano optical wave guide arrangements of accelerometers schematic diagram of the present invention.
Fig. 2 is SOI Substrate schematic diagram.
Fig. 3 is straight wave guide of the present invention and optical grating construction schematic diagram.
Fig. 4 is diesis alignment mark schematic diagram.
Fig. 5 is that cantilever beam prepares schematic diagram.
Description of the drawings：1- straight wave guides；2-Y waveguides；3- cantilever beams；4- detects mass block, 5- electrodes；6- annular chambers；7- is visited
Survey unit；8- top layer silicons；9- silicon dioxide layers；10- base silicons；11- gratings；12- input units.
Specific implementation mode
For accelerometer using SOI materials as sensing element and base material, SOI materials include top layer silicon 8, intermediate titanium dioxide
Silicon layer 9 and base silicon 10 form straight wave guide 1, Y waveguide 2, annular chamber 6 and grating 11 in top layer silicon 8；Intermediate silicon dioxide layer 9
Upper formation cantilever beam 3 and detection mass block 4；Electrode 5, input unit 12, probe unit 7 form modulate circuit.Straight wave guide 1 hangs
Arm beam 3, annular chamber 6 and grating 11 integrate, and the structure of this integral type helps to reduce mutually to be connected by separating component
It is lost caused by connecing coupling.
According to the manufacturing process of accelerometer provided by the present invention, it is broadly divided into preparation and the cantilever beam of ring resonator
Two flows of release, finally connected together using alignment process, wherein the preparation of ring resonator includes following step
Suddenly：
The first step, SOI Substrate pretreatment.Once it is cleaned by ultrasonic with acetone, isopropanol and absolute ethyl alcohol, is cleaned every time
15min, cleaning three times, are then rinsed with deionized water, are dried up through nitrogen.
Second step, high temperature modified and stress relieving by annealing.SOI Substrate is toasted using 100 DEG C of temperature, with removal
Steam on substrate increases the adhesiveness between photoresist and substrate, keeps spin coating more uniform.Meanwhile it being wanted after the completion of baking
Stress relieving by annealing processing is carried out to substrate, annealing furnace used is RPT-500 quick anneal ovens, time 2min.
Third walks, spin coating.It is 1.2-1.5 μm to select AZ4620 positive photoetching rubbers, spin coating thickness, and the running parameter of sol evenning machine is set
It is set to：Spin-coating time 6-8s, rotating speed 2000rad/min.
4th step, front baking.SOI Substrate is placed on 95 DEG C of baking platform after the completion of spin coating and toasts 90s, fully evaporates photoetching
Solvent in glue, photoresist membrane stress when reducing high speed rotation, avoids photoresist from being layered.
5th step, photoetching.Litho machine used is the domestic exposure machine of MA6 contacts, and broadband UV light source is 365 ~ 400nm,
Resolution ratio is 1 μm.Exposure parameter is set as：6.5s, exposure energy 9mW/cm3。
6th step, development.SOI Substrate after exposure is put into dedicated developer solution and is developed, time 60s.It is aobvious
Substrate is handled using oxygen plasma resist remover after the completion of shadow, removes the photoresist of exposure, while enhancing metal and SOI bases
The adhesion strength of piece.
7th step, electron beam evaporation and stripping.Using the gold of the titanium and 130nm thickness of electron beam evaporation plating 30nm thickness, then
It is put into acetone soln and impregnates 30min, then ultrasonic vibration 3min, the gold other than alignment mark is removed with tweezers in acetone soln
Belong to, and remove photoresist, finally obtains diesis alignment key pattern, as shown in Figure 4.
8th step, spin coating and electron beam lithography.It is PMMA A4 positive photoresists with photoresist, spin coating thickness is 2 μm, spin coating ginseng
Number is set as：Rotating speed is 3000rad/min, spin-coating time 6-8s.Then electron beam exposure is carried out.Instrument is Japan's electricity
The JBX5500ZA, exposure dose 600mJ/mm of son3, time for exposure 2min.
9th step, development.SOI Substrate after exposure is put into dedicated developer solution and is developed, time 60s.It is aobvious
Substrate is handled using oxygen plasma resist remover after the completion of shadow, removes the photoresist of exposure.
Tenth step, ICP deep silicon etchings.Using sense coupling, instrument is HRM etching machines, etching
Gas is SF6, passivation protection gas is C4F8, etching parameters are：ICP power is 2000W, radio-frequency power 10W, SF6Gas stream
Amount is 50sccm, and etch period 30s obtains annular chamber 6 and Y waveguide structure.
11st step, spin coating, photoetching, development, ICP deep silicon etchings obtain grating 11 on the straight wave guide 1 at both ends, obtain
Optical grating construction is as shown in Figure 3.
The release of cantilever beam mainly comprises the steps of：
12nd step, spin coating, photoetching and development.Mask used layer material is AZ4620, and spin coating thickness is about 20 μm, spin coating parameter
It is set as：Rotating speed is 3000rad/min, and spin-coating time is 6 ~ 8s.It is exposed after the completion of spin coating, exposure parameter is：9mW/
cm2, time for exposure 20s.Develop immediately after the completion of exposure, the TMAH that developer solution used is 25% and water 1:3 proportioning solution,
Developing time is 90s, then rinses nitrogen drying well with deionized water.
13rd step, it is rear to dry.After the completion of development, SOI Substrate is placed in and dries baking processing after progress on platform, glue after removal development
Interior residual solvent improves the adhesiveness of photoresist and anti-etching ability.It is 100 DEG C to dry temperature afterwards, time 90s.
14th step, ICP deep silicon etchings：Using sense coupling, the top layer silicon of 6 periphery of annular chamber is carved
Eating away.
15th step, RIE etchings.Etching instrument used is Tegal903e, and etch rate is about 200nm/min, when etching
Between be set as 30min.Every 10min, pallet is taken out and carries out cooling processing, leads to photoresist layer to avoid because temperature is excessively high
It consumes too fast.
16th step, ICP isotropic deep silicon etchings.ICP isotropics deep silicon etching used is removed therein passivated
Journey utilizes SF6Gas enters base silicon by the channel previously etched, is performed etching to silicon, outstanding to discharge silica
Arm beam 3 and detection mass block 4.Etching parameters are set as：Rate is 0.6 μm/min, time 90s, preparation process flow such as Fig. 5
It is shown.
Modulate circuit is integrated in the arrangements of accelerometers that etching is completed by the 17th step using MEMS technology, and realization is received
The preparation of rice light guide accelerometer.
Claims (1)
1. one kind is included the following steps based on Fano resonance nano optical wave guide accelerometer preparation methods：
The first step, SOI Substrate pretreatment：SOI Substrate is cleaned by ultrasonic, is then rinsed with deionized water, is dried up through nitrogen；
Second step, baking is modified and stress relieving by annealing：Pretreated SOI Substrate is toasted, to remove on substrate
Steam increases the adhesiveness between photoresist and substrate, keeps spin coating more uniform, meanwhile, after the completion of baking will to substrate into
The processing of row stress relieving by annealing；
Third walks, spin coating：The resist coating in above-mentioned SOI Substrate top layer silicon；
4th step, front baking：SOI Substrate is toasted after the completion of spin coating, fully evaporates the solvent in photoresist, reduces high speed
Photoresist membrane stress when rotation, avoids photoresist from being layered；
5th step, photoetching：The photoresist of electron beam alignment mark is exposed using mask；
6th step, development：SOI Substrate after exposure is put into developer solution and is developed, oxygen plasma is used after the completion of development
Resist remover handles substrate, removes the photoresist of exposure, while enhancing the adhesion strength of metal and SOI Substrate；
7th step, electron beam evaporation and stripping：Using electron beam evaporation titanizing and gold, it is then placed in acetone soln and impregnates, then
Ultrasonic vibration removes the metal other than alignment mark with tweezers in acetone soln, and removes remaining photoresist, finally obtains double
Cross alignment key pattern；
8th step, spin coating and electron beam lithography：Then the spin coating on the SOI Substrate for obtaining diesis alignment key pattern carries out
Electron beam exposure, to annular chamber（6）And the photoresist at waveguiding structure is exposed；
9th step, development：SOI Substrate after above-mentioned exposure is put into developer solution and is developed, oxygen etc. is used after the completion of development
Ion resist remover handles substrate, removes the photoresist of exposure；
Tenth step, ICP deep silicon etchings：Using sense coupling, annular chamber is obtained in top layer silicon（6）And wave
Guide structure, waveguiding structure include straight wave guide（1）With two Y waveguides（2）, straight wave guide（1）Including connecting two Y waveguides（2）Stem point
The straight wave guide of fork and with two Y waveguides（2）The straight wave guide that tail portion is separately connected, wherein connecting Y waveguide（2）One of stem bifurcated is straight
Waveguide and annular chamber（6）Coupling, removes remaining photoresist；
11st step, spin coating, photoetching, development, ICP deep silicon etchings, in two Y waveguides（2）The straight wave guide of tail portion（1）On obtain grating
（11）；
12nd step, spin coating, photoetching and development：Obtaining grating（11）SOI Substrate on spin coating, photoetching and development, will be annular
Chamber（6）The photoresist of periphery is got rid of；
13rd step, it is rear to dry：After the completion of development, SOI Substrate is placed in and dries baking processing after progress on platform, removes post-develop photoresist
Interior residual solvent improves the adhesiveness of photoresist and anti-etching ability；
14th step, ICP deep silicon etchings：Using sense coupling, by annular chamber（6）The top layer silicon etching of periphery
Fall；
15th step, RIE etchings：The intermediate silicon dioxide layer exposed is performed etching, is formed and is located at annular chamber（6）Lower section
Detect mass block（4）And tie-beam, and form the channel of bottom silicon etching；
16th step, ICP isotropic deep silicon etchings：With ICP isotropic deep silicon etchings, remove passivating process therein, profit
Use SF6Gas enters base silicon by the channel previously etched, is performed etching to base silicon, becomes two to discharge tie-beam
Aoxidize silicon cantilever（3）The hanging detection mass block with formation（4）, remove photoresist；
Modulate circuit is integrated in the arrangements of accelerometers that etching is completed using MEMS technology, realizes nanometer light by the 17th step
The preparation of waveguide accelerometer.
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| CN112066975A (en) * | 2020-09-25 | 2020-12-11 | 中北大学 | Gyroscope and accelerometer integrated system based on double resonant cavities and preparation method thereof |
| CN114509845A (en) * | 2022-04-21 | 2022-05-17 | 苏州熹联光芯微电子科技有限公司 | Micro-ring resonator and electronic device |
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| CN112066975A (en) * | 2020-09-25 | 2020-12-11 | 中北大学 | Gyroscope and accelerometer integrated system based on double resonant cavities and preparation method thereof |
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| CN114509845B (en) * | 2022-04-21 | 2022-07-12 | 苏州熹联光芯微电子科技有限公司 | Micro-ring resonator and electronic device |
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