CN107991768A - MEMS optics, light-absorption nano structure and preparation method thereof - Google Patents
MEMS optics, light-absorption nano structure and preparation method thereof Download PDFInfo
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- CN107991768A CN107991768A CN201711218812.3A CN201711218812A CN107991768A CN 107991768 A CN107991768 A CN 107991768A CN 201711218812 A CN201711218812 A CN 201711218812A CN 107991768 A CN107991768 A CN 107991768A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
Abstract
Present disclose provides a kind of MEMS optics, light-absorption nano structure and preparation method thereof.Wherein, the preparation method of the light-absorption nano structure, comprises the following steps：Substrate is provided；Polymeric layer is formed on the substrate；Nanoforest structure is formed using the polymeric layer；And metal nanoparticle or metal nanometer thin film are covered in the nanoforest structure.The disclosure combines the sunken luminous effect of nanoforest structure and the surface phasmon effect of metal Nano structure, realizes wide spectrum high-selenium corn function.
Description
Technical field
The present invention relates to a kind of MEMS optics, light-absorption nano structure and preparation method thereof, especially a kind of wide light
Compose MEMS optics, light-absorption nano structure of high-selenium corn and preparation method thereof.
Background technology
Light-absorption nano structure is the important component of MEMS optics, it directly influences the workability of device
Energy, manufacturing cost and application range.Wide spectrum high-selenium corn nanostructured can efficiently indistinguishably absorption on device
Incident light, and then the work efficiency of device can be greatly enhanced.
Existing a variety of wide spectrum high-selenium corn nanostructureds and preparation method thereof are studied at present, including black silicon nanostructure,
The black nanostructured of gold and surface phasmon nanostructured etc..However, existing light-absorption nano structure still has many lack
Fall into.Wherein, black silicon nanostructure is limited by silicon materials energy gap is big, and absorbing wavelength is limited；The preparation of the black nanostructured of gold
Condition is extremely harsh, it is necessary to rely on the equipment of costliness, therefore, it is difficult to realize to be widely applied；And surface phasmon nanostructured
Special optical absorption characteristics are showed due to introducing the surface phasmon effect of metal Nano structure, and then cause pass
Note.In the light-absorption nano structure of this type, most commonly used research is metal-dielectric-metal sandwich structure.Gold
Category-dielectric-metal sandwich structure can realize high-selenium corn by the coupling between sandwich construction in specific band, and lead to
Cross the pattern for changing sandwich structure, dimensional parameters or using multiple layer metal-medium alternating structure etc., also can be achieved at the same time multiple
The wavelength band of the superposition of absworption peak, then broadening high-selenium corn.But multilayer alternating structure needs alternating deposit metal layer and medium
Layer, technology difficulty is larger, and manufacturing cost is higher.And although the method by varying sandwich structure surface metal pattern can be controlled
The phasmon effect wave band of control surface metal Nano structure, can be with the wave band model of broadening light absorbs using the superposition of absworption peak
Enclose, but this is introduced into the special process for needing control surface metallic aspect again so that this class formation is highly dependent on control technique
Precision, its application field is also limited.
Therefore, for structure absorption characteristic, processing cost, technique it is convenient etc. it is many consider, design a kind of tool
There are wide spectrum high-selenium corn characteristic, and the light-absorption nano structure that its preparation method is simple, good with conventional micro-nano processing compatibility
It is very necessary.
The content of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, present disclose provides a kind of MEMS optics, light-absorption nano structure and its preparation
Method, the structure combine the sunken luminous effect of nanoforest structure and the surface phasmon effect of metal Nano structure, realize
Wide spectrum high-selenium corn function.
(2) technical solution
According to one aspect of the disclosure, there is provided a kind of preparation method of light-absorption nano structure, comprises the following steps：
Substrate is provided；Polymeric layer is formed on the substrate；Nanoforest structure is formed using the polymeric layer；And described
Metal nanoparticle and/or metal nanometer thin film are covered in nanoforest structure.
In certain embodiments, the preparation method of the light-absorption nano structure, further includes：In the substrate with polymerizeing
Mirror metal reflecting layer and planar dielectric layer are sequentially formed between nitride layer, is consequently formed multi-layer-coupled substrate.
In certain embodiments, the preparation method of the light-absorption nano structure, further includes：In the substrate with polymerizeing
Silicon membrane layer is formed between nitride layer.
In certain embodiments, the nanoforest structure is nanofiber forest structure, nanocone-nanofiber bilayer
Forest structure and nanocone forest structure；Using plasma, polymerization technique forms nanofiber forest structure again；By wait from
Polymerization technique and etching technics form nanocone-nanofiber bilayer forest structure again for daughter；Skill is polymerize by plasma again
Art, etching technics and wet corrosion technique form the nanocone forest structure.
In certain embodiments, the nanoforest structure is nanocone-nanofiber bilayer forest structure；The formation
The step of nanoforest structure, includes：Using plasma bombardment method forms first layer nanofiber forest knot in substrate
Structure；And using the first layer nanofiber forest structure as mask, second layer nanocone forest knot is formed by etching technics
Structure.
In certain embodiments, the plasma bombardment includes banging using oxygen plasma, the respective of argon plasma
Hit and combination of two after alternating bombardment.
In certain embodiments, the material in the mirror metal reflecting layer is gold, silver, aluminium or copper；The planar dielectric layer
Material be silica or magnesium fluoride；The material of the polymeric layer is positive photoresist, negative photoresist, polyimides, poly-
Ethene, makrolon, dimethyl silicone polymer (PDMS) or Parylene (Parylene)；The metal nanoparticle or gold
The material for belonging to nano thin-film is gold, silver or copper.
In certain embodiments, the substrate can be flexible substrates.
According to another aspect of the disclosure, additionally provide a kind of while there is nanoforest structure to fall into luminous effect and metal
The light-absorption nano structure of nanostructured surface phasmon effect, it uses the preparation method to be formed；The light absorbs
Nanostructured includes：Substrate；Nanoforest structure；And be covered in metal nanoparticle in the nanoforest structure and/
Or metal nanometer thin film.
According to another aspect of the disclosure, a kind of MEMS optics, including photosensitive structure, light Change-over knot are additionally provided
Structure and response structure, wherein, the photosensitive structure includes the light-absorption nano structure, for receiving incident light；The light
Transformational structure is used for the luminous energy for receiving photosensitive structure transmission, and is converted to electric energy, thermal energy or mechanical energy, and the response structure receives
The electric energy, thermal energy or mechanical energy simultaneously respond.
(3) beneficial effect
It can be seen from the above technical proposal that disclosure MEMS optics, light-absorption nano structure and preparation method thereof
At least have the advantages that one of them：
(1) disclosure MEMS optics, light-absorption nano structure and preparation method thereof use multilayer light reflection and optocoupler
Substrate (multi-layer-coupled substrate) is closed, the absorbability of device and structure to incident light is improved, is conducive to further improve device
Work efficiency.
(2) disclosure MEMS optics, light-absorption nano structure and preparation method thereof combine nanoforest structure
Luminous effect and the surface phasmon effect of metal Nano structure are fallen into, realizes wide spectrum high-selenium corn function.
(3) disclosure MEMS optics, light-absorption nano structure and preparation method thereof processing cost is low, technique simply just
It is prompt to be mass produced, it can be achieved that being commercialized.
(4) disclosure light-absorption nano structure can use flexible substrates, form nanofiber forest on a flexible substrate
Structure simultaneously covers metal nanoparticle or metal nanometer thin film and can prepare flexible wide spectrum high-selenium corn nanostructured, thus leads to
The flexible wide spectrum high-selenium corn nanostructured of simple process preparation is crossed, can be widely applied to military detection, wearable device etc.
Field.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section according to one substrate of the embodiment of the present disclosure.
Fig. 2 is that the diagrammatic cross-section behind mirror metal reflecting layer is formed in substrate according to the embodiment of the present disclosure one.
Fig. 3 is the section signal formed according to the embodiment of the present disclosure one on mirror metal reflecting layer after planar dielectric layer
Figure.
Fig. 4 is that the diagrammatic cross-section after polymeric layer is formed on planar dielectric layer according to the embodiment of the present disclosure one.
Fig. 5 is the section signal formed according to the embodiment of the present disclosure one on planar dielectric layer after nanofiber forest structure
Figure.
Fig. 6 is that the section according to the embodiment of the present disclosure one on nanofiber forest structure after splash-proofing sputtering metal nano particle shows
It is intended to.
Fig. 7 is that the section according to the embodiment of the present disclosure one on nanofiber forest structure after splash-proofing sputtering metal nano thin-film shows
It is intended to.
Fig. 8 is that the diagrammatic cross-section after silicon membrane layer is formed in multi-layer-coupled substrate according to the embodiment of the present disclosure two.
Fig. 9 is that the diagrammatic cross-section after polymeric layer is formed on silicon membrane layer according to the embodiment of the present disclosure two.
Figure 10 is the section signal formed according to the embodiment of the present disclosure two on silicon membrane layer after nanofiber forest structure
Figure.
Figure 11 be according to the embodiment of the present disclosure two using nanofiber forest structure as mask, it is thin by anisotropic etching silicon
Film layer forms the diagrammatic cross-section after nanocone-nanofiber bilayer forest structure.
Figure 12 is according to the splash-proofing sputtering metal nanometer on nanocone-nanofiber bilayer forest structure of the embodiment of the present disclosure two
Metal nanometer thin film is formed on the nanofiber of upper strata after grain, the section formed in lower floor's nanocone after metal nanoparticle shows
It is intended to.
Figure 13 is to cross wet method erosion removal upper strata nanofiber according to embodiment of the present disclosure threeway to form nanocone forest knot
Diagrammatic cross-section after structure.
Figure 14 is that the section according to the embodiment of the present disclosure three on nanocone forest structure after splash-proofing sputtering metal nano particle shows
It is intended to.
Figure 15 is the diagrammatic cross-section according to four flexible substrates of the embodiment of the present disclosure.
Figure 16 is to form the diagrammatic cross-section after polymeric layer on a flexible substrate according to the embodiment of the present disclosure four.
Figure 17 is the section signal formed on a flexible substrate according to the embodiment of the present disclosure four after nanofiber forest structure
Figure.
Figure 18 is that splash-proofing sputtering metal nano particle forms metal on nanofiber forest structure according to the embodiment of the present disclosure four
Diagrammatic cross-section after nano thin-film.
Figure 19 is to be formed according to the embodiment of the present disclosure five using nanofiber forest structure as mask by anisotropic etching
Diagrammatic cross-section after nanocone-nanofiber bilayer forest structure.
Figure 20 is according to the splash-proofing sputtering metal nanometer on nanocone-nanofiber bilayer forest structure of the embodiment of the present disclosure five
After grain, metal nanometer thin film is formed on the nanofiber of upper strata, the section signal after metal nanoparticle is formed in lower floor's nanocone
Figure.
Figure 21 is after removing upper strata nanofiber formation nanocone forest by wet etching according to the embodiment of the present disclosure six
Diagrammatic cross-section.
Figure 22 is that the section according to the embodiment of the present disclosure six on nanocone forest structure after splash-proofing sputtering metal nano particle shows
It is intended to.
<Symbol description>
Embodiment one：101- substrates, 102- mirror metals reflecting layer, 103- planar dielectric layers, 104- polymeric layers, 105-
Nanofiber forest structure, 106a- metal nanoparticle 106b- metal nanometer thin films；Embodiment two：201- substrates, 202- mirrors
Face metallic reflector, 203- planar dielectric layers, 204- silicon membrane layers, 205- polymeric layers, 206- nanofibers forest structure,
207- amorphous silicon nanorods forest structure, 208- metal nanometer thin films, 209- metal nanoparticles；Embodiment three：301- substrates,
302- mirror metals reflecting layer, 303- planar dielectric layers, 304- amorphous silicon nanorods forest structure, 305- metal nanoparticles；
Example IV：401- flexible substrates, 402- polymeric layers, 403- nanofibers forest structure, 404- metal nanometer thin films；Implement
Example five：501- substrates, 502- monocrystalline silicon nanorods forest structure, 503- nanofibers forest structure, 504- metal nanometer thin films,
505- metal nanoparticles；Embodiment six：601- substrates, 602- monocrystalline silicon nanorods forest structure, 603- metal nanoparticles.
Embodiment
For the purpose, technical scheme and advantage of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Attached drawing, is further described the disclosure.
It should be noted that in attached drawing or specification description, similar or identical part all uses identical figure number.It is attached
The implementation for not illustrating or describing in figure, is form known to a person of ordinary skill in the art in technical field.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is worth accordingly without being definitely equal to, but be able to can connect
The error margin received is similar to be worth accordingly in design constraint.The direction term mentioned in embodiment, such as " on ", " under ",
"front", "rear", "left", "right" etc., are only the directions of refer to the attached drawing, are not used for limiting the protection domain of the disclosure.
The surface phasmon effect of the sunken luminous effect of nanoforest structure and metal Nano structure is combined by the disclosure,
A kind of nanostructured of wide spectrum high-selenium corn and preparation method thereof, MEMS optics are provided, it can in wide spectral range
Incident light is absorbed with indifference, and technique is simple, can prepare parallel, suitable for commercially producing on a large scale.
The preparation method of disclosure light-absorption nano structure, comprises the following steps：
Substrate is provided；
Polymeric layer is formed on the substrate；
Nanoforest structure is formed using the polymeric layer；And
Metal nanoparticle and/or metal nanometer thin film are covered in the nanoforest structure.
Further, the preparation method of the light-absorption nano structure may also include：The substrate and polymeric layer it
Between sequentially form mirror metal reflecting layer and planar dielectric layer, in addition, can be with shape between planar dielectric layer and polymeric layer
Into silicon membrane layer.
Further, the preparation method of the light-absorption nano structure may also include：In the mirror metal reflecting layer
Titanium nitride adhesion layer is formed between substrate.
Specifically, using plasma again polymerization technique, anisotropic etch process and wet corrosion technique formed it is described
Different nanoforest structures.
Optionally, the nanoforest structure is nanocone-nanofiber bilayer forest structure, in this case, institute
Stating the step of forming nanoforest structure includes：It is gloomy that using plasma bombardment method forms first layer nanofiber in substrate
Woods structure；And using the first layer nanofiber forest structure as mask, it is gloomy that second layer nanocone is formed by etching technics
Woods structure.
The plasma bombardment is included using after oxygen plasma, the respective bombardment of argon plasma and combination of two
Alternating bombardment.
More specifically, the material in the mirror metal reflecting layer has the material of high reflectance for gold, silver, aluminium or copper etc.
Material；
The material of the planar dielectric layer can be as the material of photoresonance cavity for silica or magnesium fluoride etc.；
The material of the polymeric layer is positive photoresist, negative photoresist, polyimides, polyethylene, makrolon, poly-
Dimethyl siloxane or Parylene；
The material of the metal nanoparticle or metal nanometer thin film is the noble metals such as gold, silver or copper.
In addition, disclosure light-absorption nano structure, it uses foregoing preparation method to be formed.The disclosure additionally provides one kind
MEMS optics, it includes the light-absorption nano structure.The photosensitive structure includes the light-absorption nano structure,
For receiving incident light；The smooth transformational structure is used for the luminous energy for receiving photosensitive structure transmission, and is converted to electric energy, thermal energy or machine
Tool energy, the response structure receive electric energy, thermal energy or the mechanical energy and respond
With reference to embodiments and disclosure light-absorption nano structure and preparation method thereof is discussed in detail in attached drawing.
Embodiment one
In the present embodiment, using monocrystalline silicon as substrate, pass through sputtering technology and plasma enhanced chemical vapor deposition
(PEVCD) technique sequentially forms aluminium mirror metal reflecting layer and silica planar dielectric layer in substrate, is consequently formed multilayer optical
Reflection and optical coupling substrate.Nanofiber forest structure is to bombard polyimides positive photoresist successively by oxygen and argon plasma
Layer is formed, and metal Nano structure is the silver nano-grain or silver by the splash-proofing sputtering metal silver formation on nanofiber forest structure
Nano thin-film.This method is based on conventional micro-nano technology technique and realizes that preparation process is simple, convenient, it can be achieved that large-scale commercial
Production.
Referring to figs. 1 to 7, the preparation method of the light-absorption nano structure of the embodiment of the present disclosure one specifically includes following steps：
S11, there is provided substrate 1.
Monocrystal silicon substrate is used in the present embodiment.The substrate can be 4 cun, 6 cun, 8 cun, 12 cun of disks, and other
The substrate sheet of different shape and size suitable for micro fabrication.
It should be noted that in addition to monocrystalline silicon, the substrate can also be polysilicon, non-crystalline silicon, glass, quartz,
Common substrate in micro-nano technology technique including ceramics and polymer.
S12, forms mirror metal reflecting layer 102 in the substrate one.
Material of the metallic aluminium as mirror metal reflecting layer is used in the present embodiment, is splashed aluminium by the method for magnetron sputtering
Penetrate in 4 cun of silicon bases, the vacuum that sputter chamber is kept in technical process is 1 × 10-4Pa~10 × 10-4Pa, it is preferred that
Vacuum is 5 × 10-4Pa；It is anti-to form the aluminium mirror metal that thickness is 110~160nm in the range of 25~30 DEG C for cavity temperature
Penetrate layer and take 30~50s；When thickness is 150nm, 45s is taken.In the process in order to increase mirror metal reflecting layer and substrate
Adhesion, such as titanium nitride adhesion layer can be added between substrate and mirror metal reflecting layer.
In addition, the material in the mirror metal reflecting layer can also be the material that gold, aluminium or copper etc. have high reflectance.
S13, forms planar dielectric layer 103 on the mirror metal reflecting layer.
Silica planar dielectric layer, institute's shape are formed on mirror metal reflecting layer using the method for PECVD in the present embodiment
Into silica planar medium layer thickness be 100~2000nm, it is preferred that thickness 400nm.
In addition, the planar dielectric layer can also select magnesium fluoride etc. to form optocoupler cooperation with mirror metal reflecting layer
Dielectric material, thickness can be 100nm~1um.Low pressure chemical gas can also be used by forming the method for the planar dielectric layer
The method for mutually depositing (LPCVD).
S14, forms polymeric layer 104 on the planar dielectric layer.
The material of the polymeric layer can be positive photoresist, negative photoresist, polyimides, polyethylene, makrolon,
Dimethyl silicone polymer (PDMS) or Parylene (Parylene) etc., can also be that other can pass through plasma bombardment shape
Into the polymeric material of nanoforest structure, the thickness of polymeric layer can be 0.2um~20um.In implementation process, it can pass through
The modes such as spraying, spin coating, stickup, coining curing are set on the substrate.
It is poly- to be formed that polyimides positive photoresist is covered on planar dielectric layer using the method for spin coating in the present embodiment
Compound layer, during spin coating, the slow-speed of revolution of photoresist spinner and high rotating speed are respectively 750rpm and 4000rpm, spin-coating time be respectively 8s and
25s, carries out baking process after the spin-coating, the substrate sheet of above-mentioned formation polymeric layer can be positioned on hot plate and be toasted,
The temperature of baking is 80~130 DEG C, it is preferred that temperature is 120 DEG C, and baking time is 10~40min, it is preferred that the time is
20min, it is 1~5um to obtain thickness, it is preferred that obtains the polymeric layer that thickness is 3um.
S15, using plasma directly bombard polymeric layer, form nanofiber forest structure 105.
In the present embodiment, plasma source of the gas is oxygen and argon gas, and the flow of oxygen and argon gas is distinguished during bombardment
For 50sccm and 20sccm, chamber pressure is respectively 5Pa and 2Pa, and the time is respectively 9min and 25min, and whole process of bombarding is protected
It is 200W to hold cavity power.After removing polymeric layer completely, it is gloomy on the region of original polymeric layer to form nanofiber
Woods structure, the height of the nanofiber forest structure of formation is about 1.7um.
The plasma bombardment technique can use the plasma cleaning photoetching gluing equipment in semiconductor technology to be somebody's turn to do
Plasma bombardment technique, the species of plasma can also be other any energy in addition to oxygen plasma, argon plasma
Enough plasmas bombarded polymeric layer and its mixed gas, in plasma bombardment technique, plasma source
Flow can be 20~400sccm, and chamber pressure can be 2Pa~40Pa, and radio-frequency power can be 50~400W, processing time
Can be 2~120min.After plasma bombardment is carried out, the catabolite after polymeric layer is bombarded can occur to gather again
Close, so that original polymeric layer disappears, form nanofiber forest structure, single nanofiber in the nanofiber forest structure
A diameter of 20nm~200nm, height be about 1um~2um, the distance of single nanofiber between any two be about 50nm~
300nm。
S16, metal nanoparticle 106a is covered (such as Fig. 6 institutes using magnetron sputtering technique on nanofiber forest structure
Show) or metal nanometer thin film 106b (as shown in Figure 7).
The metal nanoparticle is usually noble metal nano particles, including gold, silver, copper etc., and thing is used in the present embodiment
The method of reason magnetron sputtering sputters one layer of metal silver nano-grain on nanofiber forest structure, and sputtering is kept in sputter procedure
The vacuum of cavity is 5 × 10-4Pa, cavity temperature is in the range of 25~30 DEG C, and the silver that sputtering thickness is 30nm takes 9s, finally
So that forming silver metal nanoparticles coating on nanofiber forest structure, the metal nanoparticle after covering is in indivedual places
Aggregation forms metal nanometer thin film, and remainder is still graininess.
So far, in the present embodiment including substrate, mirror metal reflecting layer, planar dielectric layer, nanofiber forest structure
And metal nanoparticle (or the thickness of increase splash-proofing sputtering metal nano particle forms metal on nanofiber forest structure and receives
Rice film) light-absorption nano structure be fully completed, high-selenium corn can be realized in wide spectral range.The light-absorption nano structure
Can further it be integrated with MEMS optics, the MEMS optics for form high-performance, having a wide range of application.
Light-absorption nano structure in the present embodiment, by sequentially forming mirror metal reflecting layer and plane in conventional substrate
Dielectric layer, thus obtains multilayer light reflection and optical coupling substrate, and nanofiber forest structure and metal are formed in this substrate
Nanostructured, improves the ability for absorbing incident light, is conducive to further improve the work efficiency of device.
Embodiment two
In the present embodiment, silicon membrane layer is formed in multilayer light reflection and optical coupling substrate, further on silicon membrane layer
Nanofiber forest structure is formed, nanocone-nanometer is formed by anisotropic etching using nanofiber forest structure as mask
Fiber bilayer forest structure, and sputtered at by subsequent metal on the nanofiber of upper strata and form metal nanometer thin film, received in lower floor
Metal nanoparticle is formed on rice cone, ultimately forms double-deck light-absorption nano structure.
Fig. 8 to 12 is refer to, the preparation method of the light-absorption nano structure of the embodiment of the present disclosure two specifically includes following step
Suddenly：
S21, there is provided multilayer light reflection and optical coupling substrate.
The multilayer light reflection and optical coupling substrate include substrate 2 201 shown in Fig. 8, mirror metal reflecting layer 202, plane
Dielectric layer 203.
Method is as described in embodiment one.
S22, silicon membrane layer 204 is formed using depositing operation in the multilayer light reflection and optical coupling substrate.
The silicon membrane layer 204 can be monocrystalline silicon, non-crystalline silicon and polysilicon membrane, and thickness can be 500nm~2um,
Amorphous silicon membrane is used in the present embodiment,
Amorphous silicon membrane, thickness 1um are formed on mirror metal reflecting layer using the method for PECVD in the present embodiment.
Further, it is also possible to the method using low-pressure chemical vapor deposition (LPCVD).
S23, forms polymeric layer 205 on the silicon membrane layer.
Method is as described in embodiment one.
S24, nanofiber forest structure 206 is formed using the method for plasma bombardment on silicon membrane layer.
Method is as described in embodiment one.
S25, using nanofiber forest structure as mask, forms non-crystalline silicon on amorphous thin Film layers by etching technics and receives
(as shown in figure 11, amorphous silicon nanorods-nanofiber bilayer forest structure includes non-rice cone-nanofiber bilayer forest structure
Crystal silicon nanocone forest structure 207, nanofiber forest structure 206).
The etching technics is reactive ion etching process, and etching process can be passed through a variety of reacting gas, etch period
Can be 40s~600s, in the present embodiment, using the mixed gas of chlorine and hydrogen bromide as reaction gas in etching process
Body, the two combined amount are respectively 80sccm and 40sccm, etch period 200s.
S26, forms metal nanoparticle 209 on amorphous silicon nanorods-nanofiber bilayer forest structure and metal is received
Rice film 208 (as shown in figure 12).
Method is as shown in embodiment one, due to the material properties of upper strata nanofiber and lower floor's amorphous silicon nanorods not
Together, metal nanoparticle forms the metal nanometer thin film of nearly continuity on nanofiber, and is presented on amorphous silicon nanorods
The Random Discrete distribution of metal nanoparticle.
Light-absorption nano structure in the present embodiment utilizes multilayer light reflection and optical coupling effect, the nanometer of optical coupling substrate
Cone-sunken luminous effect of nanofiber bilayer forest structure and the surface phasmon effect of metal Nano structure, realize wide light
Compose high absorbent capacity.
Embodiment three
The present embodiment forms amorphous silicon nanorods forest structure in multilayer light reflection and optical coupling substrate, and in non-crystalline silicon
Splash-proofing sputtering metal forms discrete metal nanoparticle on nanocone forest structure, and wide spectrum high-selenium corn function is incorporated into semiconductor
In material so that the amorphous silicon nanorods forest structure with characteristic of semiconductor in wide spectral range with high-selenium corn characteristic,
The application range of light-absorption nano structure is widened.
Figure 13 to 14 is refer to, the preparation method of the light-absorption nano structure of the embodiment of the present disclosure three specifically includes following step
Suddenly：
S31, using multilayer light reflection and optical coupling substrate, (multilayer light reflection and optical coupling substrate include Figure 13 to the present embodiment
Shown substrate 3 301, mirror metal reflecting layer 302, planar dielectric layer 303).
Method is as described in embodiment one.
S32, forms amorphous thin Film layers (not shown) in the multilayer light reflection and optical coupling substrate.
Method is as described in embodiment two.
S33, forms polymeric layer (not shown) on the amorphous thin Film layers.
Method is as described in embodiment one.
S34, forms nanofiber forest structure on the amorphous silicon membrane and (after carrying out plasma bombardment, polymerize
Catabolite after nitride layer is bombarded can occur to polymerize again, so that original polymeric layer disappears, form nanofiber forest knot
Structure).
Method is as described in embodiment one.
S35, it is (thin using non-crystalline silicon to form amorphous silicon nanorods-nanofiber bilayer forest structure on the amorphous silicon thin film
Film forms the amorphous silicon nanorods forest structure, and amorphous silicon nanorods forest structure has what is be connected with the planar dielectric layer
One layer thin non-crystalline silicon plane articulamentum).
Method is as described in embodiment two.
S36, removes the nanofiber on amorphous silicon nanorods 304.
The nanofiber is the nanofiber forest structure in etching as mask, which has silica
Property, can be removed by the method for wet etching in an experiment.In the present embodiment, using hydrofluoric acid aqueous solution and ammonium fluoride
It is double-deck that the hydrofluoric acid buffered oxide etch liquid (BOE) that aqueous solution volume ratio is 7 to 1 removes amorphous silicon nanorods-nanofiber
Upper strata nanofiber in forest structure.Etching time can be 30~120s, can shape after the corrosion of 60s in the present embodiment
Into amorphous silicon nanorods forest structure.
S37, forms the metal nanoparticle 305 of random distribution on amorphous silicon nanorods forest structure.
Method is as described in embodiment one.
Example IV
In the present embodiment, using nanofiber forest structure is directly formed on a flexible substrate, then using sputtering gold
The method of metal nano-particle or metal nanometer thin film prepares flexible wide spectrum high-selenium corn nanostructured.Banged by plasma
Special nature of the nanofiber forest structure of polymeric layer formation in substrate independent of substrate is hit, in some special substrates
On still can be formed with fall into luminous effect nanoforest structure, such as on a flexible substrate formed nanofiber forest structure
Flexible wide spectrum high-selenium corn nanostructured can be prepared by sputtering one layer of metal nanoparticle or metal nanometer thin film afterwards.Pass through letter
Flexible wide spectrum high-selenium corn nanostructured prepared by either simplex skill can obtain extensively should in fields such as military detection, wearable devices
With.
In the present embodiment using flexible material as substrate, the formation nanofiber forest structure on flexible material, with
Metal nanoparticle is formed on nanofiber forest structure or metal nanometer thin film is received to prepare flexible wide spectrum high-selenium corn afterwards
Rice structure.
Figure 15 to 18 is refer to, the preparation method of the light-absorption nano structure of the embodiment of the present disclosure four specifically includes following step
Suddenly：
S41, there is provided flexible substrates 4 401.
The substrate has flexible substrate for dimethyl silicone polymer (PDMS) etc..4 cun of circles are used in the present embodiment
PDMS is flexible substrates.
S42, forms polymeric layer 402 in flexible substrates four.
Method is as described in embodiment one.
S43, the method for using plasma bombardment form nanofiber forest structure 403 in flexible substrates four.
Method is as shown in embodiment one.
S44, forms metal nanometer thin film 404 on nanofiber forest structure.
Method is as described in embodiment one.
Herein it should be noted that metal nano can also be formed in the present embodiment on nanofiber forest structure
Grain, does not influence the realization of the disclosure equally.
Embodiment five
In the present embodiment, using the nanofiber forest structure formed in monocrystal silicon substrate as nanometer mask, further lead to
Cross anisotropic etch process and form monocrystalline silicon nanorods-nanofiber bilayer forest structure, and pass through follow-up physics magnetic control
Sputtering technology forms metal nanoparticle and metal nanometer thin film on double-deck forest structure, ultimately form monocrystalline silicon nanorods-
Nanofiber bilayer wide spectrum high-selenium corn nanostructured, the double-layer nanometer absorbing structure formed due to and meanwhile there is monocrystalline silicon material
The characteristic of material and fibrous material, and there is big depth-to-width ratio, so as to realize high-selenium corn in wide spectrum, therefore can obtain
To wider application.
Figure 19 to 20 is refer to, the preparation method of the light-absorption nano structure of the embodiment of the present disclosure five specifically includes following step
Suddenly：
S51, there is provided substrate 5 501.
4 cun of monocrystalline silicon are used in the present embodiment as substrate five.
S52, forms polymeric layer (not shown) in monocrystal silicon substrate.
Method is as described in embodiment one.
S53, the method for using plasma bombardment form nanofiber forest structure 503 in monocrystal silicon substrate.
Method is as described in embodiment one.
S54, using nanofiber forest structure as mask, forms list by anisotropic etch process in monocrystal silicon substrate
Crystal silicon nanocone-nanofiber bilayer forest structure (including monocrystalline silicon nanorods forest 502 and nanofiber forest 503).
Method is as described in embodiment two
S55, forms metal nanoparticle 505 on monocrystalline silicon nanorods-nanofiber bilayer forest structure and metal is received
Rice film 504 (as shown in figure 20).
Method is as shown in embodiment one.
Embodiment six
In the present embodiment, the high suction of monocrystalline silicon nanorods wide spectrum is prepared using the semiconductor material properties of monocrystal silicon substrate
Nanostructured is received, which utilizes the sunken luminous effect of semiconductor silicon nanocone forest structure and the metal nanoparticle of discrete distribution
Surface phasmon effect realize the wide spectrum high-selenium corn characteristic of semi-conducting material, widened semi-conducting material in optics
The application in field.
Figure 21 to 22 is refer to, the light-absorption nano structure preparation method of the embodiment of the present disclosure six specifically includes following step
Suddenly：
S61, there is provided substrate 6 601.
4 cun of monocrystalline silicon are used in the present embodiment as substrate six.
S62, forms polymeric layer (not shown) in substrate six.
Method is as described in embodiment one.
S63, forms nanofiber forest structure (not shown) in monocrystal silicon substrate six.
Method is as described in embodiment one.
S64, forms monocrystalline silicon nanorods-nanofiber bilayer forest structure in monocrystal silicon substrate six.
Method is as described in embodiment two.
S65, the nanofiber removed on monocrystalline silicon nanorods form monocrystalline silicon nanorods forest structure 602.
Method is as described in embodiment three.
S66, forms the metal nanoparticle 603 of random distribution on monocrystalline silicon nanorods forest structure.
Method is as described in embodiment one.
In addition, the disclosure additionally provides a kind of while there is nanoforest structure to fall into luminous effect and metallic nanostructured surface
The light-absorption nano structure of phasmon effect, it uses the preparation method to be formed；The light-absorption nano structure includes：
Substrate；Nanoforest structure；And it is covered in metal nanoparticle in the nanoforest structure and/or metal nano is thin
Film.
The disclosure additionally provides a kind of MEMS optics, including photosensitive structure, light transformational structure and response structure, its
In, the photosensitive structure includes above-mentioned light-absorption nano structure, for receiving incident light；The smooth transformational structure is used to receive
The luminous energy of photosensitive structure transmission, and is converted to electric energy, thermal energy or mechanical energy, the response structure receive the electric energy, thermal energy or
Mechanical energy simultaneously responds.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
There should be clear understanding to disclosure MEMS optics, light-absorption nano structure and preparation method thereof.
It should be noted that in attached drawing or specification text, the implementation that does not illustrate or describe is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
Various concrete structures, shape or the mode mentioned in embodiment are not limited only to, those of ordinary skill in the art can carry out more it
Change or replace.
It should also be noted that, the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
To term, such as " on ", " under ", "front", "rear", "left", "right" etc., only it is the direction of refer to the attached drawing, is not used for limiting this
Disclosed protection domain.
Particular embodiments described above, has carried out further in detail the purpose, technical solution and beneficial effect of the disclosure
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of preparation method of light-absorption nano structure, comprises the following steps：
Substrate is provided；
Polymeric layer is formed on the substrate；
Nanoforest structure is formed using the polymeric layer；And
Metal nanoparticle and/or metal nanometer thin film are covered in the nanoforest structure.
2. the preparation method of light-absorption nano structure according to claim 1, further includes：In the substrate and polymeric layer
Between sequentially form mirror metal reflecting layer and planar dielectric layer, be consequently formed multi-layer-coupled substrate.
3. the preparation method of light-absorption nano structure according to claim 2, further includes：In the substrate and polymeric layer
Between form silicon membrane layer.
4. the preparation method of light-absorption nano structure according to claim 1, wherein, the nanoforest structure is nanometer
Fiber forest structure, nanocone-nanofiber bilayer forest structure and nanocone forest structure；It polymerize skill again using plasma
Art forms nanofiber forest structure；By plasma, polymerization technique and etching technics form nanocone-nanofiber pair again
Layer forest structure；By plasma, polymerization technique, etching technics and wet corrosion technique form the nanocone forest knot again
Structure.
5. the preparation method of light-absorption nano structure according to claim 4, wherein, the nanoforest structure is nanometer
Cone-nanofiber bilayer forest structure；The step of formation nanoforest structure, includes：
Using plasma bombardment method forms first layer nanofiber forest structure in substrate；And
Using the first layer nanofiber forest structure as mask, second layer nanocone forest structure is formed by etching technics.
6. the preparation method of light-absorption nano structure according to claim 5, wherein, the plasma bombardment includes adopting
Bombarded with the alternating after oxygen plasma, the respective bombardment of argon plasma and combination of two.
7. the preparation method of light-absorption nano structure according to claim 2, wherein,
The material in the mirror metal reflecting layer is gold, silver, aluminium or copper；
The material of the planar dielectric layer is silica or magnesium fluoride；
The material of the polymeric layer is positive photoresist, negative photoresist, polyimides, polyethylene, makrolon, poly- diformazan
Radical siloxane (PDMS) or Parylene (Parylene)；
The material of the metal nanoparticle or metal nanometer thin film is gold, silver or copper.
8. the preparation method of light-absorption nano structure according to claim 1, wherein, the substrate can be flexible base
Bottom.
9. light absorbs a kind of while that there is nanoforest structure to fall into luminous effect and metallic nanostructured surface phasmon effect
Nanostructured, it uses preparation method described in any item of the claim 1 to 8 such as to be formed；The light-absorption nano structure bag
Include：Substrate；Nanoforest structure；And it is covered in metal nanoparticle and/or metal nano in the nanoforest structure
Film.
10. a kind of MEMS optics, including photosensitive structure, light transformational structure and response structure, wherein, the photosensitive structure bag
The light-absorption nano structure described in claim 9 is included, for receiving incident light；The smooth transformational structure is used to receive photosensitive structure
The luminous energy of transmission, and electric energy, thermal energy or mechanical energy are converted to, the response structure receives electric energy, thermal energy or the mechanical energy simultaneously
Respond.
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