CN112551479A - High-performance MEMS infrared sensor and preparation method thereof - Google Patents
High-performance MEMS infrared sensor and preparation method thereof Download PDFInfo
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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Abstract
The invention relates to an infrared sensor and a preparation method thereof, in particular to a high-performance MEMS infrared sensor and a preparation method thereof. According to the technical scheme provided by the invention, the high-performance MEMS infrared sensor comprises a substrate, wherein a front side induction absorption structure body is arranged on the front side of the substrate, and a back cavity which is in positive correspondence with the front side induction absorption structure body is arranged on the back side of the substrate; the front induction absorption structure comprises an infrared absorption layer, wherein an infrared absorption nano forest is arranged on the infrared absorption layer, and the infrared absorption nano forest is supported on the infrared absorption layer. The invention has the characteristics of wide spectrum and high absorption, improves the detection precision, is compatible with the prior art, and is safe and reliable.
Description
Technical Field
The invention relates to an infrared sensor and a preparation method thereof, in particular to a high-performance MEMS infrared sensor and a preparation method thereof.
Background
With the continuous development of semiconductor industry and MEMS (micro electro mechanical system) technology, the manufacturing technology of infrared sensors is also advancing. Infrared sensors with superior performance can be fabricated using advanced MEMS micromachining techniques. Nowadays, infrared sensors are more and more widely applied, for example, in the aspect of medical non-contact rapid body temperature measurement, which is of great significance in the aspect of measuring the temperature of a large range of people; in addition, the method is also applied to scientific research and military, such as infrared spectroscopy, missile guidance, thermal imaging, laser detection and the like. In the aspect of civil commerce, the infrared sensor is also widely applied to common civil equipment such as remote controllers, burglar alarms and the like.
At present, most of the existing infrared absorption layers of the MEMS infrared sensor are made of silicon nitride and other absorption materials, and the absorption rate of the existing infrared absorption layers to light is not high, so that the responsivity, the detection rate, the detection precision and the like of the device are not ideal enough, and the requirements of practical application are difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a high-performance MEMS infrared sensor and a preparation method thereof, wherein the high-performance MEMS infrared sensor has the characteristics of wide spectrum and high absorption, improves the detection precision, is compatible with the prior art, and is safe and reliable.
According to the technical scheme provided by the invention, the high-performance MEMS infrared sensor comprises a substrate, wherein a front side induction absorption structure body is arranged on the front side of the substrate, and a back cavity which is in positive correspondence with the front side induction absorption structure body is arranged on the back side of the substrate; the front induction absorption structure comprises an infrared absorption layer, wherein an infrared absorption nano forest is arranged on the infrared absorption layer, and the infrared absorption nano forest is supported on the infrared absorption layer.
And infrared absorption nanometer forest metal particles are arranged on the infrared absorption nanometer forest, so that a light absorption layer with a surface plasmon effect can be formed through the infrared absorption nanometer forest and the infrared absorption nanometer forest metal particles arranged on the infrared absorption nanometer forest.
According to a similar technical scheme, the high-performance MEMS infrared sensor comprises a substrate, wherein a front side sensing structure body is arranged on the front side of the substrate, and a back cavity which is in positive correspondence with the front side sensing structure body is arranged on the back side of the substrate; the front induction structure body is provided with a position, and the required front induction absorption structure body can be formed by matching the silicon-based nano forest and the front induction structure body.
And arranging silicon-based nano forest metal particles on the silicon-based nano forest, and forming a light absorption layer with a surface plasmon effect by the silicon-based nano forest and the silicon-based nano forest metal particles.
The nano forest on the silicon substrate is positioned on the nano forest on the silicon substrate, and the nano structures in the nano forest on the silicon substrate are in one-to-one correspondence with the nano structures in the nano forest on the silicon substrate.
The light absorption layer with the surface plasmon effect can be formed by the silicon-based nano forest, the silicon-based nano forest and the double nano forest metal particles distributed correspondingly.
The front induction structure body comprises a device supporting layer arranged on the front surface of the substrate, a lower thermocouple strip layer positioned on the device supporting layer and an upper thermocouple strip layer positioned above the lower thermocouple strip layer, and the upper thermocouple strip layer is insulated and isolated from the lower thermocouple strip layer through a thermocouple strip electric heating insulating layer; a thermal isolation layer covers the upper thermocouple strip layer;
a first electrode body and a second electrode body are arranged on the thermal isolation layer, and the first electrode body and the second electrode body can be in adaptive electric connection with the upper thermocouple strip layer and the lower thermocouple strip layer so as to form a required thermocouple;
the nanostructures in the silicon-based nanoforest are supported on the thermal isolation layer, the first electrode body, and the second electrode body.
A preparation method of a high-performance MEMS infrared sensor comprises the following steps:
step A1, providing a substrate, and preparing a front side induction absorption structure on the front side of the substrate, wherein the front side induction absorption structure comprises an infrared absorption layer positioned above the substrate;
step A2, arranging an infrared absorption polymer layer on the infrared absorption layer, wherein the infrared absorption polymer layer is supported on the infrared absorption layer;
step A3, etching the back surface of the substrate to obtain a back cavity;
and A4, preparing the infrared absorption nano forest by using the infrared absorption polymer layer.
A preparation method of a high-performance MEMS infrared sensor comprises the following steps:
step B1, providing a substrate, and preparing a front side induction structure body on the front side of the substrate;
step B2, arranging a silicon-based material layer on the front surface induction structure body, and arranging a polymer layer on the silicon-based material layer;
b3, etching the back of the substrate to obtain a back cavity, preparing a silicon-based nano forest by using the polymer layer on the silicon-based material after the back cavity is obtained, and etching the silicon-based material layer by using the obtained silicon-based nano forest to obtain a silicon-based nano forest corresponding to the silicon-based nano forest;
or preparing a silicon-based nano forest by using the polymer layer on the silicon-based material, and etching the silicon-based material layer by using the obtained silicon-based nano forest to obtain a silicon-based nano forest corresponding to the silicon-based nano forest; and after the silicon-based nano forest is prepared, etching the back surface of the substrate to obtain a back cavity.
And after the silicon-based nano forest and the silicon-based nano forest which is right corresponding to the silicon-based nano forest are obtained above the substrate, the silicon-based nano forest is removed, and the front induction structure body is matched with the silicon-based nano forest to form the required front induction absorption structure body.
The invention has the advantages that: the front side of the substrate is provided with the front side induction absorption structure body or the front side induction structure body, when the infrared absorption layer is arranged in the front side induction absorption structure body, the infrared absorption nano forest can be arranged on the infrared absorption layer, and the infrared absorption rate can be improved by utilizing the matching of the infrared absorption nano forest and the infrared absorption layer; when the infrared absorption nano forest metal particles are arranged on the infrared absorption nano forest, a light absorption layer with a surface plasmon effect can be formed, so that the wide-spectrum high-absorption characteristic is achieved, and the detection precision is improved;
the silicon-based nano forest and/or the silicon-based nano forest can be used as an infrared absorption structure on the front sensing structure body, the infrared absorption efficiency is improved, the light absorption layer with the plasmon effect on the surface can be formed by the double nano forest metal particles by preparing the silicon-based nano forest metal particles, the wide-spectrum high absorption characteristic is realized, the detection precision is improved, and the specific preparation process is compatible with the prior art and is safe and reliable.
Drawings
FIGS. 1-6 are diagrams of the steps of the method for manufacturing a front side sensing structure according to the present invention, wherein the steps are shown in the figure
FIG. 1 is a cross-sectional view of a substrate of the present invention.
Fig. 2 is a cross-sectional view of the present invention after a device support layer is formed on a substrate.
Fig. 3 is a cross-sectional view of a lower thermocouple strip layer made in accordance with the present invention.
FIG. 4 is a cross-sectional view of the thermocouple strip of the present invention after the thermal insulation layer is obtained.
Fig. 5 is a cross-sectional view of a thermal isolation layer made in accordance with the present invention.
Fig. 6 is a cross-sectional view of the first electrode body and the second electrode body according to the present invention.
Fig. 7 is a cross-sectional view of the present invention after an infrared absorbing polymer layer has been formed on the infrared absorbing layer.
Fig. 8 is a cross-sectional view of the invention after a back cavity has been prepared on the back side of the substrate.
FIG. 9 is a cross-sectional view of the present invention after utilizing an infrared absorbing polymer layer to obtain an infrared absorbing nano forest.
FIG. 10 is a cross-sectional view of infrared absorbing nano forest metal particles prepared on an infrared absorbing nano forest according to the present invention.
Fig. 11 is a cross-sectional view of a silicon-based material layer formed on a front side sensing structure according to the present invention.
FIG. 12 is a cross-sectional view of a polymer layer on a silicon-based material prepared according to the present invention on the silicon-based material layer.
FIG. 13 is a cross-sectional view of a silica-based forest prepared according to the present invention.
Fig. 14 is a cross-sectional view of a silicon-based nano forest prepared by the present invention.
Fig. 15 is a cross-sectional view of a back cavity made in accordance with the present invention.
Fig. 16 is a cross-sectional view of a double nano forest metal particle prepared by the present invention.
Fig. 17 is a cross-sectional view of the present invention after a nano forest release film is disposed on a silicon substrate.
Fig. 18 is a cross-sectional view of the present invention after separation of the silicon-based nano forest from the silicon-based nano forest.
Fig. 19 is a cross-sectional view of the back cavity fabricated using the substrate of fig. 18.
Fig. 20 is a cross-sectional view of silicon-based nano forest metal particles prepared by the present invention.
Description of reference numerals: 1-substrate, 2-device supporting layer, 3-lower thermocouple strip layer, 4-lower thermocouple strip pattern window, 5-thermocouple strip electric heating insulating layer, 6-upper thermocouple strip layer, 7-thermal isolating layer, 8-first electrode body, 9-second electrode body, 10-infrared absorption layer, 11-infrared absorption polymer layer, 12-back cavity, 13-infrared absorption nano forest, 14-infrared absorption nano forest metal particle, 15-silicon base material layer, 16-silicon base material upper polymer layer, 17-silicon base upper nano forest, 18-silicon base nano forest, 19-nano forest stripping film, 20-double nano forest metal particle and 21-silicon base nano forest metal particle.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
As shown in fig. 9: in order to enable the infrared sensor to have wide-spectrum high-absorption characteristics and improve detection accuracy, the infrared sensor comprises a substrate 1, wherein a front-side induction absorption structure body is arranged on the front side of the substrate 1, and a back cavity 12 which is in positive correspondence with the front-side induction absorption structure body is arranged on the back side of the substrate 1; the front induction absorption structure comprises an infrared absorption layer 10, an infrared absorption nano forest 13 is arranged on the infrared absorption layer 10, and the infrared absorption nano forest 13 is supported on the infrared absorption layer 10.
Specifically, the substrate 1 may specifically adopt a conventional type, such as a silicon substrate, and the specific type may be selected as needed, which is not described herein again. The front side response absorption structure sets up in the front of substrate 1, and back cavity 12 sets up in the back of substrate 1, and back cavity 12 just corresponds with the front side response absorption structure, through substrate 1, front side response absorption structure and the cooperation of back cavity 12, can be consistent with current infrared sensor, specific theory of operation etc. all with current, specifically be this technical field personnel known, and it is no longer repeated here.
In specific implementation, the front sensing absorption structure generally comprises a front sensing structure and an infrared absorption structure, infrared absorption can be realized through the infrared absorption structure, and a corresponding electric signal is obtained or generated through the front sensing structure according to infrared information absorbed by the infrared absorption structure. In the embodiment of the present invention, the front side induction absorption structure includes an infrared absorption layer 10, generally, the infrared absorption layer 10 may be a silicon nitride layer, and the infrared absorption layer 10 can be used to absorb infrared. However, as is clear from the description of the background art, when only the infrared absorption layer 10 is used for infrared absorption, the absorption efficiency is not high.
In the embodiment of the invention, the infrared absorption nano forest 13 is arranged on the infrared absorption layer 10, and the infrared absorption efficiency can be enhanced by utilizing the characteristics of the infrared absorption nano forest 13, so that the detection precision of the infrared sensor can be improved. The nanostructures in the infrared absorbing nanoforest 13 are distributed vertically on the infrared absorbing layer 10.
Further, infrared absorbing nano forest metal particles 14 are arranged on the infrared absorbing nano forest 13 so that a light absorbing layer with a surface plasmon effect can be formed by the infrared absorbing nano forest 13 and the infrared absorbing nano forest metal particles 14 arranged on the infrared absorbing nano forest 13.
In the embodiment of the invention, the infrared absorption nanometer forest metal particles 14 can be prepared on the infrared nanometer absorption layer 13 by a conventional technical means in the technical field, the material of the infrared absorption nanometer forest metal particles 14 can be gold, silver, copper, platinum or aluminum, and the specific material type can be selected according to the requirement. After the infrared absorption nano forest metal particles 14 are arranged on the infrared absorption nano forest 13, a light absorption layer with a surface plasmon effect can be formed through the infrared absorption nano forest 13 and the infrared absorption nano forest metal particles 14 arranged on the infrared absorption nano forest 13, and the method for specifically preparing the infrared absorption nano forest metal particles 14 and forming the surface plasmon effect light absorption layer can refer to the description in the document CN107991768A, and is not repeated here.
Further, the front side induction structure comprises a device supporting layer 2 arranged on the front side of the substrate 1, a lower thermocouple strip layer 3 positioned on the device supporting layer 2, and an upper thermocouple strip layer 6 positioned above the lower thermocouple strip layer 3, wherein the upper thermocouple strip layer 6 is insulated and isolated from the lower thermocouple strip layer 3 through a thermocouple strip electric heating insulation layer 5; a thermal isolation layer 7 covers the upper thermocouple strip layer 6;
the first electrode body 8 and the second electrode body 9 are arranged on the thermal isolation layer 7, and the first electrode body 8 and the second electrode body 9 can be matched and electrically connected with the upper thermocouple strip layer 6 and the lower thermocouple strip layer 3 so as to form a required thermocouple.
In the embodiment of the present invention, the device supporting layer 2 covers the front surface of the substrate 1, the device supporting layer 2 may be a silicon oxide layer, or a composite film layer of silicon oxide/silicon nitride or silicon oxide/silicon nitride/silicon oxide, and the specific type of the device supporting layer 2 and the manner of disposing the device supporting layer on the substrate 1 are the same as those in the prior art, and are well known to those skilled in the art.
In specific implementation, the thermocouple is distributed in a double-layer manner by using the upper thermocouple strip layer 6 and the lower thermocouple strip layer 3, and certainly, in specific implementation, a single-layer thermocouple strip distribution manner may also be used, which may be specifically selected according to actual needs as long as a desired thermocouple can be obtained, which is specifically known by those skilled in the art and will not be described herein again. The lower thermocouple strip layer 3 may be an N-type polysilicon layer, the N-type polysilicon layer is prepared on the device support layer 2, and the lower thermocouple strip layer 3 and the lower thermocouple strip pattern window 4 can be obtained by patterning the N-type polysilicon layer, generally, an absorption region can be formed in the central region of the substrate 1 through the lower thermocouple strip pattern window 4, and the specific shape of the lower thermocouple strip pattern window 4 is related to the distribution of the thermocouple strips in the lower thermocouple strip layer 3, and the like, which is well known to those skilled in the art, and will not be described herein again.
The upper thermocouple strip layer 6 is insulated and isolated from the lower thermocouple strip layer 3 through a thermocouple strip electric heating insulating layer 5, the thermocouple strip electric heating insulating layer 5 can be a silicon oxide layer, the thermocouple strip electric heating insulating layer 5 covers the lower thermocouple strip layer 3, the thermocouple strip electric heating insulating layer 5 is further filled in the lower thermocouple strip pattern window 4, and the thermocouple strip electric heating insulating layer 5 filled in the lower thermocouple strip pattern window 5 is supported on the device supporting layer 2.
An upper thermocouple strip layer 6 is arranged on the thermocouple strip electric heating insulation layer 5, the upper thermocouple strip layer 6 can be P-type polycrystalline silicon, specifically, a P-type polycrystalline silicon layer can be arranged on the thermocouple strip electric heating insulation layer 5, the P-type polycrystalline silicon layer is patterned, so that the upper thermocouple strip layer 6 can be obtained, the specific patterning process and the specific patterning mode are consistent with those of the prior art, after patterning, the upper thermocouple strip layer 6 corresponds to the lower thermocouple strip layer 3, the specific position relation is well known by persons skilled in the art, and the description is omitted. After the upper thermocouple strip layer 6 is obtained, a thermal isolation layer 7 is arranged on the upper thermocouple strip layer 6, and the thermal isolation layer 7 can be a silicon oxide layer. The thermal isolation layer 7 covers the upper thermocouple strip layer 6 and can be filled in a patterned area in the upper thermocouple strip layer 6; in the absorption zone, the thermal isolation layer 7 is in contact with the thermocouple strip electrothermal insulation layer 5, i.e. the absorption zone, and the thermal isolation layer 7 is supported on the thermocouple strip electrothermal insulation layer 5.
After the thermal isolation layer 7 is obtained, the thermal isolation layer 7 is subjected to contact hole etching, and metal filling is performed in the contact hole, so that the first electrode body 8 and the second electrode body 9 can be prepared, wherein the materials corresponding to the first electrode body 8 and the second electrode body 9 are metal Al or AlCu, or Au or Cr/Au. The first electrode body 8 and the second electrode body 9 can be respectively connected with the upper thermocouple strip layer 6 and the lower thermocouple strip layer 3 in a matching manner so as to form a required thermocouple, generally, in the thermocouple, the N-type thermocouple strip and the P-type thermocouple strip layer are sequentially connected and alternately distributed, and the formed thermocouple is consistent with the existing thermocouple, and is specifically known to those skilled in the art, and is not described herein again.
For the above front side sensing structure to be formed, the infrared absorption layer 10 is supported on the absorption region and covers the first electrode body 8 and the second electrode body 9, i.e., the infrared absorption region 10 covers the thermal insulation layer 7 outside the absorption region in addition to the thermal insulation layer 7 of the absorption region.
Furthermore, when the infrared absorbing nano forest metal particles 14 are provided on the infrared absorbing nano forest 13, a thin metal layer is also formed on the thermal isolation layer 7, which metal layer covers the thermal isolation layer 7, the distribution of the thin metal layer on the thermal isolation layer 7 not being shown in fig. 10.
As shown in fig. 19, a similar technical solution, the present invention includes a substrate 1, a front surface sensing structure is disposed on a front surface of the substrate 1, and a back cavity 12 corresponding to the front surface sensing structure is disposed on a back surface of the substrate 1; and arranging the silicon-based nano forest 18 positioned in the absorption region on the front sensing structural body, and forming the required front sensing absorption structural body by matching the silicon-based nano forest 18 with the front sensing structural body.
In the embodiment of the present invention, the specific conditions of the substrate 1 and the front surface sensing structure can refer to the above description, and are not described herein again. Silicon-based nanometer forest 18 sets up on positive induction structure, and silicon-based nanometer forest 18 is located the absorption region, utilizes silicon-based nanometer forest 18 can realize infrared absorption promptly, replaces infrared absorption layer 10 commonly used among the prior art through silicon-based nanometer forest 18, and silicon-based nanometer forest 18's distribution position is unanimous with infrared absorption layer 10, and specific position is in order to utilize silicon-based nanometer forest 18 to effectively realize infrared absorption, and can all with the cooperation of positive induction structure, and here is no longer repeated.
As shown in fig. 20, silicon-based nano forest metal particles 21 are disposed on the silicon-based nano forest 18, and a light absorption layer with a surface plasmon effect can be formed by the silicon-based nano forest 18 and the silicon-based nano forest metal particles 21.
In the embodiment of the present invention, the silicon-based nano forest metal particles 21 are disposed on the silicon-based nano forest 18, and the specific situation of the silicon-based nano forest metal particles 21 can be described with reference to the infrared absorption nano forest metal particles 14, that is, a light absorption layer with a surface plasmon effect can be formed by the silicon-based nano forest 18 and the silicon-based nano forest metal particles 21.
In practical implementation, when the silicon-based nano forest metal particles 21 are disposed on the silicon-based nano forest 18, since the silicon-based nano forest 18 is supported on the thermal isolation layer 7, a metal thin layer is also formed on the thermal isolation layer 7, and the metal thin layer is not shown in fig. 20 on the thermal isolation layer 7. The thin metal layer on the thermal isolation layer 7 can be insulated from the upper thermocouple strip layer 6 by the thermal isolation layer 7.
As shown in fig. 15, the silicon-based nano forest 18 further comprises a silicon-based nano forest 17 adapted to the silicon-based nano forest 18, the silicon-based nano forest 17 is located on the silicon-based nano forest 18, and nano structures in the silicon-based nano forest 17 correspond to nano structures in the silicon-based nano forest 18 one to one.
In an embodiment of the invention the nanostructures in the silicon-based nanoforest 18 are supported on the thermal isolation layer 7, the first electrode body 8 and the second electrode body 9. The silicon-based nano forest 17 is on the silicon-based nano material 18, generally, the silicon-based nano forest 17 is prepared firstly, and after the silicon-based nano forest 17 is prepared, the silicon-based nano forest 18 can be prepared by utilizing the silicon-based nano forest 17. The nanostructures in the silica-based nano forest 17 are columnar, the nanostructures in the silica-based nano forest 18 are also columnar, the nanostructures in the silica-based nano forest 17 are in one-to-one correspondence with the nanostructures in the silica-based nano forest 18, i.e., the nanostructures in the silica-based nano forest 17 are all supported on corresponding nanostructures in the silica-based nano forest 18. For the case that only the silicon-based nano forest 18 exists on the front surface sensing structure, the silicon-based nano forest 18 can be directly prepared, or the silicon-based nano forest 17 can be obtained after being removed, and the specific mode can be selected according to needs, and is not described herein again.
As shown in fig. 16, the light absorption layer further includes double nano forest metal particles 20, the double nano forest metal particles 20 are simultaneously distributed on the silicon-based nano forest 18 and the silicon-based nano forest 17, and a light absorption layer with a surface plasmon effect can be formed by the silicon-based nano forest 18, the silicon-based nano forest 17 and the correspondingly distributed double nano forest metal particles 20.
In the embodiment of the invention, when the silicon-based nano forest 18 and the silicon-based nano forest 17 are simultaneously arranged on the front sensing structure body, the double-nano forest metal particles 20 can be prepared by a common technical means in the technical field, the double-nano forest metal particles 20 are simultaneously distributed on the silicon-based nano forest 18 and the silicon-based nano forest 17, and the light absorption layer with the surface plasmon effect can be formed by the silicon-based nano forest 18, the silicon-based nano forest 17 and the correspondingly distributed double-nano forest metal particles 20. For the details of the double nano forest metal particles 20, reference may be made to the above description, and further description is omitted here.
As can be seen from the above description, when the double nano forest metal particles 20 are disposed, a metal thin layer is formed on the thermal isolation layer 7, and the distribution of the metal thin layer on the thermal isolation layer 7 is not shown in fig. 16.
The structure shown in fig. 10 can be prepared by the following process steps, and specifically, the preparation method comprises the following steps:
step A1, providing a substrate 1, and preparing a front side induction absorption structure on the front side of the substrate 1, wherein the front side induction absorption structure comprises an infrared absorption layer 10 positioned above the substrate 1;
specifically, the description above can be referred to for the specific case of the front surface sensing absorbent structure. The specific structure of the front side induction absorption structure can be prepared by the existing process, for example, fig. 1 is a substrate 1, fig. 2 is a device supporting layer 2 prepared on the front side of the substrate 1, fig. 3 is a lower thermocouple strip layer 3 prepared on the device supporting layer 2, fig. 4 is a thermocouple strip electrothermal insulation layer 5 prepared, fig. 5 is an upper thermocouple strip layer 6 and a thermal isolation layer 7 prepared, fig. 6 is a first electrode body 8 and a second electrode body 9 prepared, and after the first electrode body 8 and the second electrode body 9 are prepared, an infrared absorption layer 10 is prepared on the thermal isolation layer 7. The processes in fig. 2 to 6 may adopt conventional process steps and process conditions, which are well known to those skilled in the art and are not described herein again.
Step a2, disposing an infrared absorbing polymer layer 11 on the infrared absorbing layer 10, wherein the infrared absorbing polymer layer 11 is supported on the infrared absorbing layer 10;
as shown in fig. 7, the infrared absorbing polymer layer 11 may be a polyimide or a photoresist layer, and the specific material type of the infrared absorbing polymer layer 11 may be selected according to the requirement, which is well known to those skilled in the art and will not be described herein again. The infrared absorbing polymer layer 11 may be disposed on the infrared absorbing layer 10 by a conventional process, such as spin coating.
Step A3, etching the back surface of the substrate 1 to obtain a back cavity 12;
in specific implementation, anisotropic deep silicon etching, KOH or TMAH or other back processes can be adopted; meanwhile, the back cavity 12 may be formed by a method combining front etching and back etching, and the process for preparing the back cavity 12 may adopt the existing commonly used process conditions, which are well known to those skilled in the art, and will not be described herein again. The back cavity 12 is located on the back side of the substrate 1 and the back cavity 12 corresponds exactly to the light absorbing area on the front side of the substrate 1, as shown in fig. 8.
And A4, preparing the infrared absorption nano forest 13 by using the infrared absorption polymer layer 11.
Specifically, after the infrared absorption polymer layer 11 is prepared, the infrared absorption polymer layer 11 is bombarded by using a plasma bombardment process, and the infrared absorption nano forest 13 can be obtained after bombardment, as shown in fig. 9, the specific process and process conditions of plasma bombardment can be consistent with those of the existing process for preparing nano forest, which is well known to those skilled in the art and will not be described herein again.
Certainly, in specific implementation, the infrared absorption polymer layer 11 may be bombarded by plasma to prepare the infrared absorption nano forest 13, and after the infrared absorption nano forest 13 is prepared, the back surface of the substrate 1 is etched to obtain the back cavity 12, and the specific process sequence may be adjusted as required.
In addition, the following process sequence may also be employed, specifically: after the front side sensing structure and the infrared absorption layer 10 are prepared on the front side of the substrate 1, the back cavity 12 is prepared on the back side of the substrate 1. After the back cavity 12 is prepared, the infrared absorption polymer layer 11 is disposed on the front infrared absorption layer 10, and the infrared absorption nano forest 13 is prepared by using the infrared absorption polymer layer 11, conditions and the like in the specific process are consistent with those in the prior art, and the above description may be specifically referred to, and details are not repeated here. Of course, after the front sensing structure is prepared, the back cavity 12 may be directly prepared on the back surface of the substrate 1, after the back cavity 12 is prepared, the infrared absorption layer 10 is prepared on the front sensing structure, the infrared absorption polymer layer 11 is prepared on the infrared absorption layer 10, and after the infrared absorption polymer layer 11 is prepared, the infrared absorption nano forest 13 is prepared by using the infrared absorption polymer layer 11.
As shown in fig. 10, after the back cavity 12 and the infrared absorption nano forest 13 are prepared, the infrared absorption nano forest metal particles 14 can be prepared by conventional technical means in the technical field, and the specific process is well known to those skilled in the art and will not be described herein again.
Further, a similar preparation method comprises the following steps:
step B1, providing a substrate 1, and preparing a front induction structure body on the front side of the substrate 1;
specifically, the specific conditions of the substrate 1 and the front surface sensing structure may refer to the above description, and the specific process of the front surface sensing structure may refer to the above description, which is not repeated herein.
Step B2, arranging a silicon-based material layer 15 on the front surface induction structure body, and arranging a silicon-based material upper polymer layer 16 on the silicon-based material layer 15;
as shown in fig. 11, in order to prepare a silicon-based material layer 15 on the front surface of the substrate 1, the silicon-based material layer 15 covers the thermal isolation layer 7, generally, the silicon-based material layer 15 covers the absorption region, and the silicon-based material layer 15 covers the first electrode body 8 and the second electrode body 9, the silicon-based material layer 15 may be polysilicon or amorphous silicon, and the specific material type may be selected according to the requirement.
As shown in fig. 12, the polymer-on-silicon layer 16 is disposed on the silicon-based material layer 15, the polymer-on-silicon layer 16 may be a polyimide or photoresist layer, the polymer-on-silicon layer 16 is disposed on the silicon-based material layer 15, and the silicon-based material layer 15 is disposed on the front sensing structure.
Step B3, etching the back surface of the substrate 1 to obtain a back cavity 12, preparing a silicon-based nano forest 17 by utilizing the polymer layer 16 on the silicon-based material after obtaining the back cavity 12, and etching the silicon-based material layer 15 by utilizing the obtained silicon-based nano forest 17 to obtain a silicon-based nano forest 18 corresponding to the silicon-based nano forest 17;
or preparing a silicon-based nano forest 17 by using the silicon-based material upper polymer layer 16, and etching the silicon-based material layer 15 by using the obtained silicon-based nano forest 17 to obtain a silicon-based nano forest 18 corresponding to the silicon-based nano forest 17; after the silicon-based nano forest 18 is prepared, the back surface of the substrate 1 is etched to obtain the back cavity 12.
Specifically, the above description can be referred to for descriptions of processes for preparing the back cavity 12 on the substrate 1, and details are not repeated here. The polymer layer 16 on the silicon-based material is bombarded by plasma, so that the nano forest 17 on the silicon-based material can be prepared by utilizing the polymer layer 16 on the silicon-based material, and the specific technological process refers to the technological process of preparing the infrared absorption nano forest 13 by utilizing the infrared absorption polymer layer 11, which is well known by persons skilled in the art. After the silicon-based nano forest 17 is prepared, the silicon-based material layer 15 is etched by using the silicon-based nano forest 17 as a mask, so that the silicon-based nano forest 18 can be prepared, and the specific process for preparing the silicon-based nano forest 18 is well known by those skilled in the art and is not described herein again.
As shown in fig. 13, a schematic diagram of a silicon-based nano forest 17 is prepared by using a polymer layer 16 on a silicon-based material, fig. 14 is a schematic diagram of a silicon-based nano forest 18 prepared by using the silicon-based nano forest 17 as a mask, and fig. 15 is a schematic diagram of a back cavity 12 obtained by etching the back surface of a substrate 1. For the specific case of etching the back cavity 12 first and then preparing the silicon-based nano forest 17 and the silicon-based nano forest 18, reference may be made to the diagrams of fig. 13 to 15.
In specific implementation, after the front side sensing structure and the silicon-based material layer 15 are prepared, the back side of the substrate 1 may be etched to obtain the back cavity 12, after the back cavity 12 is obtained, the silicon-based material upper polymer layer 16 is disposed on the front side of the substrate 1, then the silicon-based material upper polymer layer 16 is used to prepare the silicon-based nano forest 17, and the obtained silicon-based material layer 17 is used to etch the silicon-based material layer 15 to obtain the silicon-based nano forest 18 corresponding to the silicon-based nano forest 17.
Of course, in specific implementation, after the front-side sensing structure is prepared, the back side of the substrate 1 may be directly etched to prepare the back cavity 12. After the back cavity 12 is obtained, a silicon-based material layer 15 is arranged on the front surface induction structure body, a silicon-based material upper polymer layer 16 is arranged on the silicon-based material layer 15, then, a silicon-based nano forest 17 is prepared by using the silicon-based material upper polymer layer 16, and the silicon-based material layer 15 is etched by using the obtained silicon-based nano forest 17, so that a silicon-based nano forest 18 corresponding to the silicon-based nano forest 17 is obtained.
Further, after the silicon-based nano forest 17 and the silicon-based nano forest 18 are obtained, the nano forest metal particles 20 can be prepared by a common technical means of the technology, the double nano forest metal particles 20 are simultaneously distributed on the silicon-based nano forest 18 and the silicon-based nano forest 17, and a light absorption layer with a surface plasmon effect can be formed by the silicon-based nano forest 18, the silicon-based nano forest 17 and the correspondingly distributed double nano forest metal particles 20, as shown in fig. 16.
As shown in fig. 17, after a silicon-based nano forest 18 and a silicon-based nano forest 17 corresponding to the silicon-based nano forest 18 are obtained above a substrate 1, the silicon-based nano forest 17 is removed, and a front sensing structure is matched with the silicon-based nano forest 18 to form a required front sensing absorption structure.
Specifically, after the silicon-based nano forest 18 and the silicon-based nano forest 17 are prepared, only the silicon-based nano forest 18 may be remained, at this time, the nano forest stripping film 19 is disposed on the silicon-based nano forest 17, the nano forest stripping film 19 may be a blue film, a UV film or a PDMS film, and after the silicon-based nano forest 17 is connected to the nano forest glass film 19, the silicon-based nano forest 17 and the silicon-based nano forest 18 may be separated, and only the silicon-based nano forest 18 may be remained, as shown in fig. 18.
If the silicon-based nano forest 18 and the silicon-based nano forest 17 are prepared first, the silicon-based nano forest 17 and the silicon-based nano forest 18 are separated, and only the silicon-based nano forest 18 is reserved, the back surface of the substrate 1 needs to be etched to prepare the back cavity 12, as shown in fig. 19. After the back cavity 12 is prepared, the silicon-based nano forest metal particles 21 are prepared on the silicon-based nano forest 18 by a common technical means in the technical field, and a light absorption layer with a surface plasmon effect can be formed by the silicon-based nano forest 18 and the silicon-based nano forest metal particles 21, as shown in fig. 20.
Claims (10)
1. A high-performance MEMS infrared sensor comprises a substrate (1), wherein a front side induction absorption structure body is arranged on the front side of the substrate (1), and a back cavity (12) which is right corresponding to the front side induction absorption structure body is arranged on the back side of the substrate (1); the front induction absorption structure comprises an infrared absorption layer (10), and is characterized in that: and an infrared absorption nano forest (13) is arranged on the infrared absorption layer (10), and the infrared absorption nano forest (13) is supported on the infrared absorption layer (10).
2. The high performance MEMS infrared sensor of claim 1, wherein: and infrared absorption nanometer forest metal particles (14) are arranged on the infrared absorption nanometer forest (13) so as to form a light absorption layer with a surface plasmon effect through the infrared absorption nanometer forest (13) and the infrared absorption nanometer forest metal particles (14) arranged on the infrared absorption nanometer forest (13).
3. A high-performance MEMS infrared sensor comprises a substrate (1), wherein a front sensing structure body is arranged on the front surface of the substrate (1), and a back cavity (12) which is right corresponding to the front sensing structure body is arranged on the back surface of the substrate (1); the method is characterized in that: and arranging a silicon-based nano forest (18) positioned in the absorption region on the front sensing structural body, and forming the required front sensing absorption structural body by matching the silicon-based nano forest (18) with the front sensing structural body.
4. The high performance MEMS infrared sensor of claim 3, wherein: and silicon-based nano forest metal particles (21) are arranged on the silicon-based nano forest (18), and a light absorption layer with a surface plasmon effect can be formed through the silicon-based nano forest (18) and the silicon-based nano forest metal particles (21).
5. The high performance MEMS infrared sensor of claim 3, wherein: the silicon-based nano forest structure comprises silicon-based nano forests (18) and is characterized by further comprising silicon-based nano forests (17) matched with the silicon-based nano forests (18), wherein the silicon-based nano forests (17) are located on the silicon-based nano forests (18), and nano structures in the silicon-based nano forests (17) correspond to nano structures in the silicon-based nano forests (18) one to one.
6. The high performance MEMS infrared sensor of claim 5, wherein: the light absorption layer is characterized by further comprising double-nano forest metal particles (20), wherein the double-nano forest metal particles (20) are distributed on the silicon-based nano forest (18) and the silicon-based nano forest (17) at the same time, and the light absorption layer with the surface plasmon effect can be formed through the silicon-based nano forest (18), the silicon-based nano forest (17) and the double-nano forest metal particles (20) distributed correspondingly.
7. The high performance MEMS infrared sensor of claim 3 or 4 or 5 or 6, wherein: the front induction structure body comprises a device supporting layer (2) arranged on the front surface of a substrate (1), a lower thermocouple strip layer (3) positioned on the device supporting layer (2) and an upper thermocouple strip layer (6) positioned above the lower thermocouple strip layer (3), wherein the upper thermocouple strip layer (6) is insulated and isolated from the lower thermocouple strip layer (3) through a thermocouple strip electric heating insulating layer (5); a thermal isolation layer (7) covers the upper thermocouple strip layer (6);
a first electrode body (8) and a second electrode body (9) are arranged on the thermal isolation layer (7), and the first electrode body (8) and the second electrode body (9) can be matched and electrically connected with the upper thermocouple strip layer (6) and the lower thermocouple strip layer (3) so as to form a required thermocouple;
nanostructures within the silicon-based nanoforest (18) are supported on the thermal isolation layer (7), the first electrode body (8) and the second electrode body (9).
8. A preparation method of a high-performance MEMS infrared sensor is characterized by comprising the following steps:
step A1, providing a substrate (1), and preparing a front-side induction absorption structure on the front side of the substrate (1), wherein the front-side induction absorption structure comprises an infrared absorption layer (10) positioned above the substrate (1);
step A2, arranging an infrared absorption polymer layer (11) on the infrared absorption layer (10), wherein the infrared absorption polymer layer (11) is supported on the infrared absorption layer (10);
a3, etching the back surface of the substrate (1) to obtain a back cavity (12);
and A4, preparing the infrared absorption nano forest (13) by using the infrared absorption polymer layer (11).
9. A preparation method of a high-performance MEMS infrared sensor is characterized by comprising the following steps:
step B1, providing a substrate (1), and preparing a front side induction structure body on the front side of the substrate (1);
step B2, arranging a silicon-based material layer (15) on the front surface induction structure body, and arranging a silicon-based material upper polymer layer (16) on the silicon-based material layer (15);
b3, etching the back surface of the substrate (1) to obtain a back cavity (12), preparing a silicon-based nano forest (17) by using a silicon-based material upper polymer layer (16) after obtaining the back cavity (12), and etching the silicon-based material layer (15) by using the obtained silicon-based nano forest (17) to obtain a silicon-based nano forest (18) corresponding to the silicon-based nano forest (17);
or preparing a silicon-based nano forest (17) by using a silicon-based material upper polymer layer (16), and etching the silicon-based material layer (15) by using the obtained silicon-based nano forest (17) to obtain a silicon-based nano forest (18) corresponding to the silicon-based nano forest (17); and after the silicon-based nano forest (18) is prepared, etching the back surface of the substrate (1) to obtain a back cavity (12).
10. The method for preparing a high-performance MEMS infrared sensor according to claim 9, characterized in that after obtaining a silicon-based nano forest (18) and a silicon-based nano forest (17) corresponding to the silicon-based nano forest (18) above a substrate (1), the silicon-based nano forest (17) is removed, and a front sensing structure is matched with the silicon-based nano forest (18) to form a required front sensing absorption structure.
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