CN107768244A - 非晶质硅膜的形成方法 - Google Patents
非晶质硅膜的形成方法 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 238000012805 post-processing Methods 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 150000002118 epoxides Chemical class 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000000746 purification Methods 0.000 claims abstract description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 74
- 239000001272 nitrous oxide Substances 0.000 claims description 37
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 32
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000006690 co-activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
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Abstract
本发明提供一种非晶质硅膜的形成方法，并且包括如下步骤：沉积步骤，在腔室内的基板上沉积非晶质硅膜；后处理步骤，为了改善所述非晶质硅膜的蚀刻速率或者表面粗糙度，利用等离子体激活后处理气体，在所述非晶质硅膜上部表面部执行后处理，其中所述后处理气体包含氮基和氧基中至少任意一种；净化步骤，供给净化气体至所述腔室内；及抽吸步骤，抽吸所述腔室。
Description
技术领域
本发明涉及一种物质膜的形成方法，更详细地说涉及一种非晶质硅膜的形成方法。
背景技术
为了由使用193nm波长的浸渍氟化氩(ArF)曝光装备而非高价的EUV装备实现10纳米以下的微细工艺，建议使用类似DPT(Double Patterning Technology，双重图案化技术)或QPT(Quadraple Patterning Technology，四重图案化技术)的多功能图案化工艺技术。在这种多功能图案化工艺中，在硬掩膜结构体使用SiON膜，但是随着微细工艺变得更加严格，在蚀刻工艺中与下部膜的蚀刻选择性比率成为重要的问题。
相关现有技术有大韩民国公开公报第2009-0114251号。(2009.11.03公开、发明名称：利用隔片图案化技术的微图案形成方法)
发明内容
(要解决的问题)
本发明是为了解决包括上述问题的多个问题而提出的，其目的在于，提供一种可改善蚀刻选择比特性的非晶质硅膜的形成方法。但是，该问题仅仅是预示性的，并不由此限定本发明的范围。
(解决问题的手段)
为了解决上述问题，提供根据本发明一观点的非晶质硅膜的形成方法。所述非晶质硅膜的形成方法的特征在于，包括：沉积步骤，在腔室内的基板上沉积非晶质硅膜；后处理步骤，通过等离子体激活后处理气体，在腔室内所述非晶质硅膜上部表面部上执行后处理，所述后处理气体包含氮基和氧基中的至少任意一种；净化步骤，供给净化气体至所述腔室内；及抽吸步骤，抽吸所述腔室。
在所述的非晶质硅膜的形成方法中，所述后处理步骤为，利用所述等离子体使用由氮气(N2)和一氧化二氮(N2O)构成的后处理气体对所述非晶质硅膜进行后处理。
在所述的非晶质硅膜的形成方法中，所述后处理步骤为，利用所述等离子体使用由一氧化二氮(N2O)构成的后处理气体对所述非晶质硅膜进行后处理。
在所述的非晶质硅膜的形成方法中，执行所述后处理的步骤包括：在所述非晶质硅膜的上部表面部形成氮基和氧基中至少任意一种成分含量相对更多的区域。
所述的非晶质硅膜的形成方法中，沉积所述非晶质硅膜的步骤包括：供给SixHy系的甲、乙、丙硅烷气体作为反应气体供给至所述基板，用等离子体增强化学气相沉积法(PECVD)工艺沉积非晶质硅膜的步骤。
(发明的效果)
根据如上所述的本发明的部分实施例，可以提供一种可以改善蚀刻选择比特性的非晶质硅膜的形成方法。当然，本发明的范围不受该效果限定。
附图说明
图1是示出根据本发明一实施例的非晶质硅膜形成方法的流程图。
图2是根据本发明实验例的多种等离子体后处理条件的非晶质硅膜的干式蚀刻速率(dry etch rate)检测结果的比较图面。
图3和图4是根据本发明实验例的多种等离子体后处理条件的非晶质硅膜的表面粗糙度(roughness)检测结果的比较图面。
图5至图8是在表1的实验例1、实验例2、实验例5中分别对非晶质硅膜成分进行分析的TOF-SIMS测量结果。
具体实施方式
通过说明书的全部内容，当提及膜、区域或基板等类似的一个构成要素位于另一构成要素“上”时，可理解为所述一个构成要素直接接触所述另一构成要素“上”，或者可存在设于这之间的其它构成要素。相反，当提及一个构成要素“直接”位于另一构成要素上时，可理解为不存在设于其之间的另外的构成要素。
参照概略示出本发明理想实施例的图面说明本发明实施例。例如，以图面为基础，可以根据制造技术及/或公差(tolerance)预测图示形状的变形。因此，不能以限定于本说明书中示出的区域特定形状来解释本发明思想的实施例，例如应该包括在制造上产生的形状变化。并且，为了说明的便利及明确性，可夸张体现附图中各层的厚度或大小。相同的符号指称相同的要素。
本发明中提及的等离子体可通过直接等离子体化(direct plasma)的方式形成。所述直接等离子体化的方式包括如下的方式：例如，供给预处理气体、反应气体及/或后处理气体至电极与基板之间的处理空间并施加变频电源，由此在腔室内部的处理空间中直接形成预处理气体、反应气体及/或后处理气体的等离子体。
为了方便说明，在本发明中将利用等离子体激活特定气体的状态命名为“特定气体等离子体”。例如，将利用等离子体激活氨气(NH3)的状态命名为氨气(NH3)等离子体、将利用等离子体一同激活氨气(NH3)和氮气(N2)的状态命名为氨气(NH3)和氮气(N2)等离子体、将利用等离子体一同激活一氧化二氮(N2O)气和氮气(N2)的状态命名为一氧化二氮(N2O)和氮气(N2)等离子体。
图1是示出根据本发明一实施例的非晶质硅膜形成方法的流程图。
参照图1，根据本发明一实施例的非晶质硅膜的形成方法包括如下的步骤：沉积步骤S100，在腔室内的基板上沉积非晶质硅膜；后处理步骤S200，利用包含氮基和氧基中至少任意一种成分的等离子体，在所述非晶质硅膜的上表面部执行后处理；净化及抽吸步骤S300，供给净化气体至所述腔室内进行净化，并抽吸所述腔室。
在基板上沉积非晶质硅膜的步骤S100可包括如下的步骤：供给反应气体和惰性气体至腔室内的基板上并施加高频电源来形成等离子体，进而在下部膜上沉积非晶质硅膜。在沉积非晶质硅膜的步骤S100中，在为了形成等离子体而施加低频电源时，形成的非晶质硅一部分为粉末状，由此可产生膜质不良的问题。本发明中提及的高频电源和低频电源作为在腔室内用于形成等离子体而施加的电源，能够以参照RF电力的频率范围为标准区分高频电源和低频电源。例如，高频电源的频率范围在3MHz至30MHz，严格地讲是在13.56MHz至27.12MHz频率范围。低频电源的频率范围在30MHz至3000MHz，严格地讲是在300MHz至600MHz频率范围。
所述下部膜可包括氧化膜、氧质化膜或质化膜，除此之外，所述下部膜还可包括光刻工序中作为硬掩膜来使用的SOH膜。
所述反应气体可包括SixHy系的甲、乙、丙硅烷系的反应气体，例如所述反应气体可以包括硅烷(SiH4)。所述惰性气体可包括从氦(He)、氖(Ne)和氩(Ar)中选择的至少任意一种气体，所述惰性气体可以包括氩气。
例如，沉积非晶质硅膜的步骤S100可以是等离子体增强化学气相沉积法(PECVD、plasma enhanced chemical capor deposition)工艺。在化学气相沉积法(CVD)工艺中，使反应气体接近并注入于腔室内的基板上，之后反应气体在对象体表面上产生反应，从而在对象体表面上形成薄膜，并从腔室去除沉积工艺之后的反应物。作为反应气体的反应所需能源来施加热时，可需要500℃至1000℃以上的温度，但是该沉积温度对周边构成要素可能产生不好的影响。因此，根据本发明一实施例的非晶质硅膜形成方法作为在降低反应温度的CVD工序中已实用化的方法之一，可将反应气体的至少一部分离子化的等离子体增强化学气相沉积法可以应用于沉积步骤S100中。
但是，本发明的技术思想不限定于此，沉积非晶质硅膜的步骤S100也可以适用于包括通过原子层沉积(ALD)工艺沉积非晶质硅膜的步骤的情况中。
根据本发明另一实施例的非晶质硅膜形成方法还可包括如下的步骤：在不施加用于形成等离子体的电源的状态下供给所述反应气体和惰性气体至腔室内的基板上，以作为在沉积非晶质硅膜的步骤S100之前将腔室内的气体稳定化的步骤。
根据本发明的其他变形实施例的非晶质硅膜的形成方法还可包括预处理步骤，在沉积非晶质硅膜的步骤S100之前，在所述下部膜上执行氨气(NH3)等离子体处理。由于对下部膜执行等离子体预处理，因此后续的非晶质硅膜可以光滑沉积，进而可实现非晶质硅膜中良好的表面粗糙度，可强化下部膜和非晶质硅膜之间的接合力，可改善非晶质硅膜的厚度的均匀性。在预处理步骤中，为了形成氨气(NH3)等离子体而施加的电源可以是由低频电源和高频电源构成的双频电源。在低频电源和高频电源的电力总和小于900W时，可确认到不能去除下部膜的氢基且不能生成悬空键(dangling bond)，从而产生硅原子不能有效地附着于下部膜的现象，由此为了在预处理步骤中形成氨气(NH3)等离子体而施加的双频电源的电力优选为应该在为900W以上。
执行后处理的步骤S200可包括表面处理步骤，利用包括氮基和氧基中至少任意一种成分的等离子体，在所述非晶质硅膜的上部表面部执行表面处理。
包含所述氮基和氧基中至少任意一种成分的等离子体可以由一氧化二氮(N2O)等离子体、一氧化氮(NO)等离子体、氨气(NH3)等离子体及氮气(N2)等离子体中选择的任意组合构成。例如，包括所述氮基和氧基中至少任意一种成分的等离子体可以是氮气(N2)和一氧化二氮(N2O)等离子体、或者是一氧化二氮(N2O)等离子体、或者是氮气(N2)等离子体、或者是氮气(N2)和氨(NH3)等离子体。
根据本发明的一实施例，利用PECVD方式沉积作为硬掩膜的非晶质硅膜后，执行上述的后处理步骤，进而有效地去除非晶质硅膜上部界面中的氢基并形成界面保护膜，由此可改善后续干式工艺中的干式蚀刻速率(Dry Etch Rate)特性。作为后处理气体可以包括一氧化二氮(N2O)及/或一氧化氮(NO)，该一氧化二氮(N2O)及/或一氧化氮(NO)为添加氧基从而对非晶质硅膜的上部界面提供氧化(Oxidation)效果。另外，后处理气体可包括氨气(NH3)及/或氮气(N2)，该氨气(NH3)及/或氮气(N2)为添加氮基从而对非晶质硅膜的上部界面提供氮化(Nitridation)效果。
沉积非晶质硅膜的步骤S100和执行后处理的步骤S200之后，执行供给净化气体至腔室内进行净化并抽吸所述腔室的步骤S300。沉积非晶质硅膜的步骤S100和执行后处理的步骤S200连续执行，并不在两个步骤之间执行腔室的抽吸，由此在原位状态(in-situ)下执行沉积非晶质硅膜的步骤S100和执行后处理的步骤S200。
执行上述沉积非晶质硅膜的步骤S100和执行所述后处理的步骤S200，由此可实现用于在所述基板上执行光刻工艺的硬掩膜结构。为了实现微细工序，在类似DPT(DoublePatterning Technology、双图案化技术)或QPT(Quadraple Patterning Technology、四图案化技术)的多功能图案化工艺技术中，当用上述方法实现的非晶质硅膜代替作为硬掩膜结构体的SiON膜时，可确认到与下部膜的蚀刻选择比特性更为优秀。与其相关的说明通过实验例进行后述。
以下，对根据本发明多种实验例的非晶质硅膜形成方法中实现的膜质特性进行比较，由此示例性说明本发明的技术思想。
表1是根据本发明实验例的多种等离子体后处理条件比较非晶质硅膜的特性。
表1
表1中，同SiON膜相比，干式蚀刻速率(Dry Etch Rate)改善率体现出非晶质硅膜的干式蚀刻速率的比率。实验例1是沉积非晶质硅膜后，没有另外执行等离子体后处理的情况；实验例2是沉积非晶质硅膜后，以10000sccm的流量供给氮气(N2)气体至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况；实验例3是沉积非晶质硅膜后，分别以9500sccm和500sccm流量供给氮气(N2)和氨气(NH3)至腔室内并施加高频电源，从而形成等离子体之后执行后处理的情况；实验例4是在沉积非晶质硅膜后，分别以9500sccm和500sccm流量供给氮气(N2)和一氧化二氮(N2O)气体至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况；实验例5是沉积非晶质硅膜后，分别以9500sccm和5000sccm流量供给氮气(N2)和一氧化二氮气(N2O)气体至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况；实验例6是沉积非晶质硅膜后，以10000sccm流量供给一氧化二氮(N2O)气体至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况；实验例7是沉积非晶质硅膜后，以10000sccm流量供给氩气(Ar)至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况；实验例8是沉积非晶质硅膜后，以10000sccm流量供给氢气(H2)至腔室内并施加高频电源，从而形成等离子体后执行10秒的后处理的情况；实验例9是沉积非晶质硅膜后，以10000sccm流量供给氢气(H2)至腔室内并施加高频电源，从而形成等离子体后执行30秒的后处理的情况。
另外，实验例10是沉积SiON膜后，以10000sccm流量供给一氧化二氮(N2O)气体至腔室内并施加高频电源，从而形成等离子体后执行后处理的情况。
参照表1的例子，实验例5是干式蚀刻速率和表面粗糙度方面都能够满足的例子，实验例6是表面粗糙度方面较好，但是干式蚀刻速率与实验例5相比相对较低，从而根据需要可以选择性地适用实验例5和实验例6。
图2是根据本发明实验例的多种等离子体后处理条件的非晶质硅膜的干式蚀刻速率(dry etch rate)检测结果的比较图面。参照表1和图2，可以确认到相比于实验例1在实验例5、实验例6中非晶质硅膜的膜质硬度提高30％以上，进而蚀刻选择比特性也有所改善，其中实验例5、实验例6是利用一氧化二氮(N2O)等离子体对非晶质硅膜执行后处理的情况，实验例1是没有对非晶质硅膜执行另外的后处理的情况。
图3和图4是根据本发明实验例的多种等离子体后处理条件的非晶质硅膜的表面粗糙度(roughness)检测结果的比较图面。参照表1、图3及图4，可以确认到相比于实验例1在实验例5、实验例6中非晶质的表面粗糙度得到100％以上的改善，其中实验例5、实验例6是利用一氧化二氮(N2O)等离子体对非晶质硅膜执行后处理的情况，实验例1是没有对非晶质硅膜执行另外的后处理的情况。
图5至图8是在表1的实验例1、实验例2、实验例5中分别对非晶质硅膜成分进行分析的TOF-SIMS测量结果。
参照图5，对于经过非晶质硅膜和作为下部膜的氧化硅膜的硅(Si)成分的组成分布，并未在实验例1(Ref)、实验例2(N2TRT)及实验例5(N2+N2O TRT)中体现出显著性差异。
参照图6，对于经过非晶质硅膜和作为下部膜的氧化硅膜的氢(H)成分分布，并未在实验例1(Ref)、实验例2(N2TRT)及实验例5(N2+N2O TRT)中体现出显著性差异。
参照图7，对于经过非晶质硅膜和作为下部膜的氧化膜的氧(O)成分分布，相比于实验例1(Ref)在实验例5(N2+N2O TRT)中体现出显著性差异。即，确认到相比于实验例1在实验例5中在非晶质硅膜的上部表面部上含有大量的氧成分，其中实验例5为沉积非晶质硅膜后供给氮气(N2)和一氧化二氮(N2O)气体至腔室内并施加高频电源从而形成等离子体后执行后处理情况，实验例1为沉积非晶质硅膜后不执行另外的等离子体后处理的情况。
参照图8，对于经过非晶质硅膜和作为下部膜的氧化硅膜的氮(N)成分分布，相比于实验例1(Ref)在实验例2(N2TRT)中体现出显著性差异。即，确认到相比于实验例1在实验例2中在非晶质硅膜上部表面部含有大量的氮成分，其中实验例2为沉积非晶质硅膜后供给氮气(N2)至腔室内并施加高频电源从而形成等离子体后执行后处理的情况，实验例1为沉积非晶质硅膜后不执行另外的等离子体后处理的情况。。
由此，可确认到如下的效果：作为后处理气体的氮气(N2)为，添加氮基从而可以对非晶质硅膜的上部界面提供氮化(Nitridation)效果；作为后处理气体的一氧化二氮(N2O)为，添加氧基从而可以对非晶质硅膜的上部界面提供氧化(Oxidation)效果。进一步地说，可以确认到执行所述后处理，进而也可在非晶质硅膜的上部表面部上形成氮基和氧基中至少任意一种成分含量相对更多的区域。
本发明参照图示的实施例进行了说明，但是其不过是示例性的，若是具有公知常识的人可理解从此进行多种变形且均等的其他实施例。因此，本发明的真正技术保护范围由权利要求的技术思想决定。
Claims (5)
1.一种非晶质硅膜的形成方法，其特征在于，包括：
沉积步骤，在腔室内的基板上沉积非晶质硅膜；
后处理步骤，通过等离子体激活后处理气体，在所述腔室内所述非晶质硅膜上部表面部执行后处理，所述后处理气体包含氮基和氧基中的至少任意一种；
净化步骤，供给净化气体至所述腔室内；及
抽吸步骤，抽吸所述腔室。
2.根据权利要求1所述的非晶质硅膜的形成方法，其特征在于，
所述后处理步骤为，利用所述等离子体使用由氮气和一氧化二氮构成的后处理气体对所述非晶质硅膜进行后处理。
3.根据权利要求1所述的非晶质硅膜的形成方法，其特征在于，
所述后处理步骤为，利用所述等离子体使用由一氧化二氮构成的后处理气体对所述非晶质硅膜进行后处理。
4.根据权利要求1所述的非晶质硅膜的形成方法，其特征在于，
所述后处理的步骤包括如下的步骤：
在所述非晶质硅膜的上部表面部上形成氮基和氧基中至少任意一种成分含量相对更多的区域。
5.根据权利要求1所述的非晶质硅膜的形成方法，其特征在于，
所述非晶质硅膜沉积步骤包括如下的步骤：
将硅烷(SixHy)系的甲、乙、丙硅烷气体作为反应气体供给于所述基板上，并且利用等离子体增强化学气相沉积法沉积非晶质硅膜。
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| US10898618B2 (en) * | 2014-09-08 | 2021-01-26 | The Texas A&M University System | Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof |
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2016
- 2016-08-19 KR KR1020160105666A patent/KR102125511B1/ko active IP Right Grant
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2017
- 2017-03-30 US US15/473,895 patent/US20180053652A1/en not_active Abandoned
- 2017-03-30 CN CN201710201313.7A patent/CN107768244B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020134671A1 (en) * | 2001-01-19 | 2002-09-26 | Demaray Richard E. | Method of producing amorphous silicon for hard mask and waveguide applications |
| CN1619781A (zh) * | 2003-11-19 | 2005-05-25 | 佳能株式会社 | 处理方法及装置 |
| US20090130851A1 (en) * | 2007-11-21 | 2009-05-21 | Makoto Hasegawa | Method for manufacturing semiconductor device |
| US20100078738A1 (en) * | 2008-09-30 | 2010-04-01 | Texas Instruments Incorporated | Method to Maximize Nitrogen Concentration at the Top Surface of Gate Dielectrics |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180053652A1 (en) | 2018-02-22 |
| KR102125511B1 (ko) | 2020-06-23 |
| CN107768244B (zh) | 2021-08-13 |
| KR20180020775A (ko) | 2018-02-28 |
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