CN107765197A - A kind of Hall sensor - Google Patents
A kind of Hall sensor Download PDFInfo
- Publication number
- CN107765197A CN107765197A CN201711164096.5A CN201711164096A CN107765197A CN 107765197 A CN107765197 A CN 107765197A CN 201711164096 A CN201711164096 A CN 201711164096A CN 107765197 A CN107765197 A CN 107765197A
- Authority
- CN
- China
- Prior art keywords
- electrode
- sensing area
- hall sensor
- sensing
- interior angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000005684 electric field Effects 0.000 abstract description 36
- 230000005357 Hall field Effects 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- 230000005355 Hall effect Effects 0.000 description 6
- 240000002853 Nelumbo nucifera Species 0.000 description 4
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 4
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000002153 concerted effect Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 210000003813 thumb Anatomy 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000005690 magnetoelectric effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The present invention provides a kind of Hall sensor, including：Substrate, sensing area and electrode；Sensing area is in cross profile, has four protuberances, and the radiused interior angle towards sensing district center indent connects adjacent two protuberances, has electrode in sensing area protuberance, and electrode is outwardly towards district center is sensed；Hall sensor of the present invention has radiused interior angle, sensing area is avoided right angle interior angle occur, so that electric charge can avoid electric current concentrations at right angle interior angle when moving, so as to solve electric current in sensing area right angle interior angle part concentrations, cause right angle interior angle part electric-field intensity excessive, cause component pressure insufficient, the problem of causing component wear；Electrode is outwardly towards sensing district center, in the case where not dramatically increasing electrode zone effective area, adds the length of electrode, so as to collect more electric charges, reduces the time of formation Hall field between potential electrode.
Description
Technical field
The invention belongs to field of semiconductor devices, is related to a kind of Hall sensor.
Background technology
Hall sensor is a kind of magnetic field sensor made according to Hall effect.Hall effect is the one of magnetoelectric effect
Kind, this phenomenon is that Hall (A.H.Hall, 1855-1938) is found when the conductive mechanism of metal is being studied within 1879, after
To find that semiconductor, conductor fluid etc. also have this effect.
Hall effect：If metal or wafer are vertically arranged in the magnetic field that magnetic induction intensity is B, to vertical magnetic field
When electric current is passed through on direction, the physical phenomenon of electric field is being produced on the direction of electric current and magnetic field, suitable for left hand rule,
The left hand palm is shakeout, allows magnetic induction line to pass through the centre of the palm, four refer to the expression positive charge direction of motion, then refer to vertical thumb with four
Direction is the direction of Lorentz force.But it should be noted that moving charge is positive, the sensing of thumb is Lorentz force
Direction., whereas if moving charge is negative, is still referred to four and represent charge movement direction, then the negative side of the sensing of thumb
To for Lorentz force direction.Because Hall sensor can detect direction and the size in magnetic field, therefore can be widely applied to
Industrial automation technology, detection technique and information processing etc., and the Hall sensor based on semiconductor is widely used.
Here, the Hall sensor based on semiconductor refers to complementary metal oxide semiconductor (CMOS), bipolar (Bipolar), double
The Hall sensor that pole-complementary metal oxide semiconductor (Bipolar CMOS) is implemented.
In traditional semiconductor hall sensor, sensing area is generally N-type semiconductor material, is formed in P-type semiconductor
On substrate.Fig. 1 is shown as a kind of overlooking the structure diagram of cross shape Hall sensor of the prior art.Wherein, Hall
Sensor sensing area 101 is N-type semiconductor material, and the electrode of the sensing area 101 includes first electrode 102a, second electrode
102b, the 3rd electrode 102c and the 4th electrode 102d, the first electrode 102a and the 3rd electrode 102c form potential electrode, institute
State second electrode 102b and the 4th electrode 102d and form galvanic electrode.
Fig. 2 is shown as the operation schematic diagram of the electric charge under electric field action of the Hall sensor in Fig. 1.According to Hall effect machine
Reason, in the absence of a magnetic field, the extrinsic motivated electric current I between the galvanic electrode, the electric charge in the sensing area 101
104 under the influence of an electric field, and directed movement is done to the second electrode 102b from the 4th electrode 102d, i.e., described electric charge 104
Move in the direction indicated along running route 103a, 103b and 103c.The electric charge is accumulated due to no in the potential electrode
104, thus, electric field is not formed, therefore the Hall voltage between ideally described potential electrode is zero.
Fig. 3 is shown as the operation schematic diagram of the electric charge under electric field and magnetic fields of the Hall sensor in Fig. 1.By the sense
Survey area 101 and be vertically arranged in the magnetic field that magnetic field intensity is B (i.e. perpendicular to the magnetic field that the outside magnetic field intensity of paper is B), in institute
Extrinsic motivated electric current I between galvanic electrode is stated, the electric charge 104 does directed movement under the influence of the electric field that exciting current I is formed
While, accumulated and deflected to the upper surface ABCDEF of sensing area 101 by the effect of Lorentz force, i.e., described electric charge 104 is along institute
State the direction motion of running route 103a, 103b and 103c sign.Thus, the sensing area 101 is produced by lower surface GHIJKL
To upper surface ABCDEF transverse electric field EH。
The electric charge 104 accumulated on the upper surface ABCDEF of sensing area 101 increases with the passage of time, laterally electricity
Field EHAlso corresponding increase, until transverse electric field EHThe active force of the electric charge 104 is offset (i.e. big during the Lorentz force suffered by it
It is small equal, in opposite direction), the electric charge 104 of the upper and lower end face of sensing area 101 accumulation is not further added by, and reaches balance, now
Set up stable transverse electric field and transverse potential, as Hall field and Hall voltage.The process established from Hall voltage can
To find out, obvious Hall effect is produced, just must be before stable Hall field be established, in the sensing area 101
The electric charge 104 as much as possible is accumulated in the potential electrode.
Sensing area 101 described in cross of the prior art, under the effect of magnetic field Lorentz force, some described electric charge
104 can run up to AB end faces, GH end faces, EF end faces, KL end faces first, before stable Hall field is established, AB end faces and EF
The electric charge 104 accumulated on end face, it will continue to be partially moved to CD end faces from right angle interior angle B and right angle interior angle E；GH end faces
With the electric charge 104 accumulated on KL end faces, it will continue to be partially moved to IJ end faces from right angle interior angle H and right angle interior angle K.Institute
State electric charge 104 to move along described right angle interior angle B, E, H and K part, electric current can be caused in this 4 described right angle interior angle B, E, H and K
Part concentrations, cause this 4 right angle interior angle B, E, H and K partial electric-field intensity excessive, cause component pressure insufficient,
Cause component wear.And the Hall electricity for supplying effective Hall field of Hall sensor circuits sense to be formed between potential electrode
, it is mainly formed by the electric charge 104 for being accumulated in CD end faces and IJ end faces.And AB end faces and GH end faces, EF end faces and KL
The electric charge 104 of end face accumulation is not almost contributed Hall field due to the short-circuiting effect of galvanic electrode, therefore, AB ends
The electric charge 104 that face, GH end faces, EF end faces, KL end faces accumulate has delayed the settling time of stable Hall field.In addition, with
Hall sensor reduces the requirement of cost, and the area of the sensing area 101 progressively reduces, therefore, the area of the electrode
It can progressively reduce, how the Hall field formed between potential electrode be effectively improved in limited space, it has also become this area
One of technical staff's urgent problem to be solved.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of Hall sensor, for solving
Certainly electric current causes right angle interior angle part electric-field intensity excessive, causes component pressure in sensing area right angle interior angle part concentrations
Deficiency, the problem of causing component wear.
In order to achieve the above objects and other related objects, the present invention provides a kind of Hall sensor, including：
Substrate；
Sensing area, it is formed on the substrate, the sensing area is in the cross profile with four protuberances, and adjacent
Two protuberances between by towards it is described sensing district center indent radiused interior angle be connected；
Electrode, it is arranged in the sensing area protuberance, the electrode is outwardly towards the sensing district center.
Preferably, the doping type of the sensing area and the electrode is n-type doping, and the doping type of the substrate is P
Type adulterates.
Preferably, the doping type of the sensing area and the electrode adulterates for p-type, and the doping type of the substrate is N
Type adulterates.
Preferably, the doping concentration of the electrode is higher than the doping concentration of the sensing area.
Preferably, the outer margin contour of the sensing area protuberance include towards the outwardly broken line of the sensing district center and
One kind in the group that camber line is formed.
Preferably, the outer margin contour of the electrode is included towards the outwardly broken line of the sensing district center and camber line institute group
Into group in one kind.
Preferably, the electrode extends vertically through the sensing area protuberance.
Preferably, the electrode includes a pair of potential electrodes and a pair of galvanic electrodes.
As described above, the Hall sensor of the present invention, has the advantages that：Sensing area has four protuberances and court
Sense the radiused interior angle of district center indent；Electrode is outwardly towards sensing district center.Therefore, the circular arc of district center indent is sensed
Changing interior angle, can to solve Hall sensor sensing area right angle interior angle part electric-field intensity excessive, causes component pressure insufficient, causes
The problem of component wear；On the other hand, the electrode in sensing area protuberance is outwardly towards sensing district center, therefore, limited
Space in add the effective area of electrode, thus effectively improve the Hall field formed between potential electrode.
Brief description of the drawings
Fig. 1 is shown as a kind of overlooking the structure diagram of cross shape Hall sensor of the prior art.
Fig. 2 is shown as the operation schematic diagram of the electric charge under electric field action of the Hall sensor in Fig. 1.
Fig. 3 is shown as the operation schematic diagram of the electric charge under electric field and magnetic fields of the Hall sensor in Fig. 1.
Fig. 4 is shown as the overlooking the structure diagram of the Hall sensor in the embodiment of the present invention one.
Fig. 5 is shown as in Fig. 4 A-A ' to cross section structure diagram.
Fig. 6 is shown as the operation schematic diagram of the electric charge under electric field action of the Hall sensor in Fig. 4.
Fig. 7 is shown as the operation schematic diagram of the electric charge under electric field and magnetic fields of the Hall sensor in Fig. 4.
Fig. 8 is shown as the force analysis schematic diagram of the electric charge under electric field and magnetic fields of the Hall sensor in Fig. 7.
Fig. 9 is shown as the overlooking the structure diagram of the Hall sensor in the embodiment of the present invention two.
Component label instructions
101st, 201,301 sensing area
211st, 311 protuberance
221st, 321 radiused interior angle
102a, 202a, 302a first electrode
102b, 202b, 302b second electrode
The electrode of 102c, 202c, 302c the 3rd
The electrode of 102d, 202d, 302d the 4th
104th, 204 electric charge
200 substrates
103a, 103b, 103c, 203a, 203b, 203c running route
Embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book understands other advantages and effect of the present invention easily.
Fig. 4 is referred to Fig. 9.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only to
Coordinate the content disclosed in specification, so that those skilled in the art understands and reads, being not limited to the present invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influenceing the effect of present invention can be generated and the purpose that can reach, all should still fall in disclosed skill
Art content is obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", "left", "right", " centre " and
The term of " one " etc., understanding for narration is merely convenient to, and is not used to limit the enforceable scope of the present invention, its relativeness
It is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable category of the present invention.
Embodiment one
The overlooking the structure diagram for the Hall sensor being shown as shown in Figure 4 in the present embodiment, Fig. 5 are shown as in Fig. 4
A-A ' is to cross section structure diagram.The present invention provides a kind of Hall sensor, including substrate 200；It is formed on the substrate 200
Sensing area 201, the sensing area 201 has four protuberances 211, and the sensing area 201 is in cross profile, and adjacent
By being connected towards the radiused interior angle 221 of the center indent of sensing area 201 between two protuberances 211, the sensing area
There is electrode, the electrode is outwardly towards the center of sensing area 201 in protuberance 211.
The sensing area 201 and the electrode are homotype doped semiconductor materials, and the substrate 200 and the sensing area
201 and electrode transoid conduction type each other.For example, the doping type of the sensing area 201 and the electrode can be selected
For n-type doping, the doping type of the substrate 200 can be selected to be adulterated for p-type.Certainly, in other examples, the sensing
The doping type of area 201 and the electrode can also be selected and adulterated for p-type, and the doping type of the substrate 200 can also be selected
For n-type doping.
Specifically, the doping concentration of the electrode is higher than the doping concentration of the sensing area 201, and the doping of the electrode is dense
Degree can be advantageous to reduce contact resistance when the electrode of sensing area 201 is drawn higher than the doping concentration of the sensing area 201.
The substrate 200 includes one kind in p-type doped semiconductor materials and n-type doping semi-conducting material.The p-type doped semiconductor
The Doped ions of material include B, BF, BF2And any one in In or combination.The doping of the n-type doping semi-conducting material
Ion includes any one or combination in P and As.In the present embodiment, the substrate 200 is p-type doped semiconductor materials, institute
The Doped ions for stating p-type doped semiconductor materials are B ions.Accordingly, the sensing area 201 and the electrode are n-type doping
Semi-conducting material, the Doped ions of the n-type doping semi-conducting material are P ion.In another embodiment, also can be by the lining
Bottom 200 replaces with n-type doping semi-conducting material, and accordingly, the sensing area 201 and the electrode replace with p-type doping and partly led
Body material.
As an example, the outer margin contour of the sensing area protuberance 211 is comprising outwardly towards the center of sensing area 201
Broken line and the group that is formed of camber line in one kind, the adjacent protuberance 211 be interconnected to form it is described it is radiused in
Angle 221.The radiused interior angle 221, the sensing area 201 is avoided right angle interior angle occur so that electric charge can avoid electricity when moving
Stream concentrations at right angle interior angle, so as to solve electric current in right angle interior angle part concentrations, cause right angle interior angle part electric
Field intensity is excessive, causes component pressure insufficient, the problem of causing component wear.In the present embodiment, the sensing area protuberance 211
Outer margin contour be rendered as being surrounded by more Straight Combinations, as shown in figure 4, the sensing area 201 has 4 protuberances
211, and it is symmetrical.
As an example, the outer margin contour of the electrode is included towards the center of sensing area 201 outwardly broken line and arc
One kind in the group that line is formed.The projected area of the electrode in the vertical direction is from the edge of sensing area 201 to institute
State the center of sensing area 201 increase successively or staged increase.In the present embodiment, the electrode outer margin contour is rendered as straight by more
Line combination surrounds, as shown in figure 4, the projected area of the electrode in the vertical direction is from the edge of sensing area 201 to described
The center of sensing area 201 increases successively, and the electrode is outwardly towards the center of sensing area 201, not dramatically increase institute
In the case of stating electrode zone effective area, the length of the electrode is added, so as to collect more electric charges, is advantageous to increase
Big Hall voltage.
As an example, the electrode extends vertically through the sensing area protuberance 211.In the present embodiment, the electrode is N-type
Heavily-doped semiconductor material.Preferably, in the present embodiment, the electrode extends vertically through the sensing area protuberance 211, such as schemes
Shown in 5, contact resistance can be reduced when the electrode of sensing area 201 is drawn.
As an example, the electrode includes a pair of potential electrodes and a pair of galvanic electrodes.Specifically, the electrode includes the
One electrode 202a, second electrode 202b, the 3rd electrode 202c and the 4th electrode 202d, the first electrode 202a and the 3rd electrode
202c forms the potential electrode, and the second electrode 202b and the 4th electrode 202d form the galvanic electrode.
Fig. 6 is shown as the operation schematic diagram of the electric charge under electric field action of the Hall sensor in Fig. 4.As shown in fig. 6, according to
Hall effect mechanism, in the absence of a magnetic field, the extrinsic motivated electric current I between the galvanic electrode, the sensing area 201
Described in electric charge 204 under the influence of an electric field, do directed movement, i.e. edge to the second electrode 202b from the 4th electrode 202d
The direction motion of running route 203a, 203b and 203c sign.The electric charge is accumulated due to no between the potential electrode
204, therefore, electric field is not formed, therefore the Hall voltage between ideally described potential electrode is zero.
Fig. 7 is shown as the operation schematic diagram of the electric charge under electric field and magnetic fields of the Hall sensor in Fig. 4.Such as Fig. 7 institutes
Show, the sensing area 201 is vertically arranged in the magnetic field that magnetic field intensity is B (the magnetic for being B perpendicular to the outside magnetic field intensity of paper
).The extrinsic motivated electric current I between the galvanic electrode, electric charge 204 is formed in exciting current I described in the sensing area 201
Electric field under the influence of while do directed movement, upper end area from the effect of Lorentz force to the first electrode 202a that formed by
Tired deflection, i.e., moved along described running route 203a, 203b and 203c direction indicated.Thus, produce by the 3rd electrode
The transverse electric field E for lower surface to the first electrode 202a upper surfaces formed that 202c is formedH.As seen from Figure 7, the sensing
The almost all of the electric charge 204 that stable Hall field is established in area 201 is collected by the potential electrode, and less appearance is by other
The situation for moving again to the potential electrode is first collected in end face, so as to accelerate the settling time of stable Hall field, improves
The reaction time of Hall sensor；The radiused interior angle 221 avoids electric current and excessively collected in the radiused part of interior angle 221
In, cause the pressure-resistant deficiency of element so as to avoid the partial electric-field intensity of radiused interior angle 221 excessive, cause element to damage
It is bad；Meanwhile the electrode is outwardly towards the center of sensing area 201, is not dramatically increasing electrode effective coverage face
In the case of product, the length of the electrode is added, to collect more electric charges 204, accelerates stable Hall field
Settling time.
In the electric field E that exciting current I is formedIAnd the Hall field E that magnetic field B is formedHUnder collective effect, the electric charge 204
Along described path 203a, 203b and 203c force analysis, as shown in Figure 8.Wherein FEFor the electric field E formed by exciting current II
The electric field force formed, it is assumed that electric field EIIt is invariable, then electric field force FEAlso it is invariable.Lorentz force FLDo not change motion electricity
The speed and kinetic energy of lotus, the direction of motion that can only change the electric charge 204 is allowed to deflect, and Lorentz force FLDirection always with motion
Direction is vertical.For the sake of simplicity, the statistical distribution of the electric charge 204 and the scattering campaign of the electric charge 204 are not considered, therefore,
It is considered that the electric charge 204 has same speed, and assume that the speed of the electric charge 204 is average speed v0.Therefore, it is
Simplified analysis, it is assumed that magnetic field B keeps constant, due to Lorentz force FL=qv0B, we also think Lorentz force FLIt is invariable.
FEH(FEH1~FEH4) it is Hall field EHThe Hall field power of formation, due to the potential in the sensing area protuberance 211
The electric charge 204 accumulated on electrode increases with the passage of time, correspondingly transverse electric field EHAlso corresponding increase, thus FEH
Also accordingly increase with the increase of time in the motion process of electric charge 204, established until stablizing Hall field.Wherein F1、
F2、F3Electric charge 204 is in F described in respectively described running route 203aE、FL、FEHWhat is formed under the influence of three power makes a concerted effort.Closing
In the presence of power, the electric charge 204 is migrated along the path 203a；Similarly, F4、F5Respectively described running route
Electric charge 204 described in 203c is in FE、FL、FEHWhat is formed under the influence of three power makes a concerted effort.In the presence of making a concerted effort, the electric charge 204
Migrated along the path 203c.
In the embodiment of the present invention, Hall sensor has radiused interior angle, avoids sensing area from right angle interior angle occur so that electricity
Lotus can avoid electric current concentrations at right angle interior angle when moving, and excessively collect in sensing area right angle interior angle part so as to solve electric current
In, cause right angle interior angle part electric-field intensity excessive, cause component pressure insufficient, the problem of causing component wear；Electrode is towards sense
It is outwardly to survey district center, in the case where not dramatically increasing electrode zone effective area, adds the length of electrode, so as to
More electric charges are collected, reduce the time of formation Hall field between potential electrode.
Embodiment two
The present embodiment and the difference of embodiment one be, the sensing area protuberance and the electrode cross-section outer rim
The profile of profile is different.
As shown in figure 9, the overlooking the structure diagram for the Hall sensor being shown as in the present embodiment.The present invention provides a kind of
Hall sensor, including substrate (not shown)；The sensing area 301 being formed on the substrate, the sensing area 301 are in have four
The cross profile of individual protuberance 311, and by towards in the center of sensing area 301 between adjacent two protuberances 311
Recessed radiused interior angle 321 is connected；Be arranged at electrode in the sensing area protuberance 311 towards the center of sensing area 301 to
Outer protrusion.
The sensing area 301 and the electrode are homotype doped semiconductor materials, and the substrate and the sensing area 301
And electrode transoid conduction type each other.For example, it is N that the doping type of the sensing area 301 and the electrode, which can be selected,
Type is adulterated, and the doping type of the substrate can be selected to be adulterated for p-type.Certainly, in other examples, the sensing area 301
And the doping type of the electrode can also be selected and adulterated for p-type, the doping type of the substrate can also be selected to be mixed for N-type
It is miscellaneous.
Specifically, the doping concentration of the electrode is higher than the doping concentration of the sensing area 301, and the doping of the electrode is dense
Degree can be advantageous to reduce contact resistance when the electrode of sensing area 301 is drawn higher than the doping concentration of the sensing area 301.
The substrate includes one kind in p-type doped semiconductor materials and n-type doping semi-conducting material.The p-type doped semiconductor material
The Doped ions of material include B, BF, BF2And any one in In or combination.The doping of the n-type doping semi-conducting material from
Attached bag includes any one or combination in P and As.In the present embodiment, the substrate is p-type doped semiconductor materials, the p-type
The Doped ions of doped semiconductor materials are B ions.Accordingly, the sensing area 301 and the electrode are n-type doping semiconductor
Material, the Doped ions of the n-type doping semi-conducting material are P ion.In another embodiment, the substrate can also be replaced
For n-type doping semi-conducting material, accordingly, the sensing area 301 and the electrode replace with p-type doped semiconductor materials.
As an example, the outer margin contour of the sensing area protuberance 311 is comprising outwardly towards the center of sensing area 301
Broken line and the group that is formed of camber line in one kind, the protuberance 311 is interconnected to form the radiused interior angle 321.
The radiused interior angle 321, the sensing area 301 is avoided right angle interior angle occur so that electric charge can avoid electric current straight when moving
Angle interior angle concentrations, so as to solve electric current in right angle interior angle part concentrations, cause right angle interior angle electric-field intensity excessive, draw
Play component pressure deficiency, the problem of causing component wear.In the present embodiment, the outer margin contour of the sensing area protuberance 311 is in
Now surrounded to be combined by camber line, as shown in figure 9, the sensing area 301 has 4 protuberances 311, and it is symmetrical.
As an example, the outer margin contour of the electrode is included towards the center of sensing area 301 outwardly broken line and arc
One kind in the group that line is formed.The projected area of the electrode in the vertical direction is from the edge of sensing area 301 to institute
State the center of sensing area 301 increase successively or staged increase.The projected area of the electrode in the vertical direction is from the sensing
The edge of area 301 increases successively to the center of sensing area 301, and the electrode is outwardly towards the center of sensing area 301, so as to
In the case where not dramatically increasing the electrode zone effective area, increase the length of the electrode, so as to collect more electricity
Lotus, be advantageous to increase Hall voltage.
As an example, the electrode extends vertically through the sensing area protuberance 311.In the present embodiment, the electrode is N
Type heavily-doped semiconductor material.Preferably, in the present embodiment, the electrode extends vertically through the sensing area protuberance 311,
Contact resistance can be reduced when the electrode of sensing area 301 is drawn.
As an example, the electrode includes a pair of potential electrodes and a pair of galvanic electrodes.Specifically, the electrode includes the
One electrode 302a, second electrode 302b, the 3rd electrode 302c and the 4th electrode 302d, the first electrode 302a and the 3rd electrode
302c forms the potential electrode, and the second electrode 302b and the 4th electrode 302d form the galvanic electrode.
In the embodiment of the present invention, the Hall sensor has radiused interior angle, avoids sensing area from right angle interior angle occur, makes
Electric current concentrations at right angle interior angle can be avoided when obtaining electric charge movement, so as to solve electric current in sensing area right angle interior angle part mistake
Degree is concentrated, and right angle interior angle part electric-field intensity is excessive, causes component pressure insufficient, the problem of causing component wear；Electrode is towards institute
It is outwardly to state sensing district center, in the case where not dramatically increasing electrode zone effective area, adds the length of electrode, from
And more electric charges are collected, reduce the time of formation Hall field between potential electrode.
In summary, Hall sensor of the present invention has radiused interior angle, avoids sensing area from right angle interior angle occur so that electricity
Lotus can avoid electric current concentrations at right angle interior angle when moving, and excessively collect in sensing area right angle interior angle part so as to solve electric current
In, cause right angle interior angle part electric-field intensity excessive, cause component pressure insufficient, the problem of causing component wear；Electrode is towards institute
It is outwardly to state sensing district center, in the case where not dramatically increasing electrode zone effective area, adds the length of electrode, from
And more electric charges are collected, reduce the time of formation Hall field between potential electrode.So the present invention effectively overcomes
Various shortcoming of the prior art and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of Hall sensor, it is characterised in that the Hall sensor includes：
Substrate；
Sensing area, it is formed on the substrate, the sensing area is in the cross profile with four protuberances, and adjacent two
By being connected towards the radiused interior angle of the sensing district center indent between the individual protuberance；
Electrode, it is arranged in the sensing area protuberance, the electrode is outwardly towards the sensing district center.
2. Hall sensor according to claim 1, it is characterised in that：The doping type of the sensing area and the electrode
For n-type doping, the doping type of the substrate adulterates for p-type.
3. Hall sensor according to claim 1, it is characterised in that：The doping type of the sensing area and the electrode
Adulterated for p-type, the doping type of the substrate is n-type doping.
4. Hall sensor according to claim 1, it is characterised in that：The doping concentration of the electrode is higher than the sensing
The doping concentration in area.
5. Hall sensor according to claim 1, it is characterised in that：The outer margin contour of the sensing area protuberance includes
One kind in the group formed towards the outwardly broken line of the sensing district center and camber line.
6. Hall sensor according to claim 1, it is characterised in that：The outer margin contour of the electrode is included towards the sense
The one kind surveyed in the group that the outwardly broken line of district center and camber line are formed.
7. Hall sensor according to claim 1, it is characterised in that：The electrode extends vertically through the sensing area protrusion
Portion.
8. Hall sensor according to claim 1, it is characterised in that：The electrode includes a pair of potential electrodes and a pair
Galvanic electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711164096.5A CN107765197B (en) | 2017-11-21 | 2017-11-21 | Hall sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711164096.5A CN107765197B (en) | 2017-11-21 | 2017-11-21 | Hall sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107765197A true CN107765197A (en) | 2018-03-06 |
| CN107765197B CN107765197B (en) | 2020-07-07 |
Family
ID=61278428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711164096.5A Active CN107765197B (en) | 2017-11-21 | 2017-11-21 | Hall sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107765197B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110418973A (en) * | 2017-06-12 | 2019-11-05 | 西部数据技术公司 | magnetic sensor using spin Hall effect |
| CN112540329A (en) * | 2020-10-20 | 2021-03-23 | 中国科学院微电子研究所 | Hall sensor and preparation and test method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87215461U (en) * | 1987-11-14 | 1988-12-14 | 河北工学院 | Symmetry hall device |
| EP1155287A1 (en) * | 1999-02-26 | 2001-11-21 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Hall sensor with a reduced offset signal |
| CN1529916A (en) * | 2001-07-26 | 2004-09-15 | ɵ��Ӳ���Ԫ����ʽ���� | Semiconductor hall sensor |
| US7960714B2 (en) * | 2008-12-12 | 2011-06-14 | Alcatel-Lucent Usa Inc. | Interfering excitations in FQHE fluids |
| CN104253208A (en) * | 2013-06-28 | 2014-12-31 | 美格纳半导体有限公司 | Semiconductor-based hall sensor |
| CN105810815A (en) * | 2015-01-20 | 2016-07-27 | 精工半导体有限公司 | Hall element |
| CN106449969A (en) * | 2016-12-01 | 2017-02-22 | 上海南麟电子股份有限公司 | Hall sensor and preparation method thereof |
| CN206293470U (en) * | 2016-08-23 | 2017-06-30 | 苏州矩阵光电有限公司 | A kind of Hall element |
| CN107195773A (en) * | 2017-06-26 | 2017-09-22 | 中国科学技术大学 | P-type semiconductor's hetero-junctions Hall rod, its preparation and application and purposes |
| CN207541246U (en) * | 2017-11-21 | 2018-06-26 | 上海南麟电子股份有限公司 | A kind of Hall sensor |
-
2017
- 2017-11-21 CN CN201711164096.5A patent/CN107765197B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87215461U (en) * | 1987-11-14 | 1988-12-14 | 河北工学院 | Symmetry hall device |
| EP1155287A1 (en) * | 1999-02-26 | 2001-11-21 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Hall sensor with a reduced offset signal |
| US6639290B1 (en) * | 1999-02-26 | 2003-10-28 | Fraunhofer-Gesellschaft Zur Foerderung, Der Angewandten Forschung E.V. | Hall sensor with a reduced offset signal |
| CN1529916A (en) * | 2001-07-26 | 2004-09-15 | ɵ��Ӳ���Ԫ����ʽ���� | Semiconductor hall sensor |
| US7960714B2 (en) * | 2008-12-12 | 2011-06-14 | Alcatel-Lucent Usa Inc. | Interfering excitations in FQHE fluids |
| CN104253208A (en) * | 2013-06-28 | 2014-12-31 | 美格纳半导体有限公司 | Semiconductor-based hall sensor |
| US20150002140A1 (en) * | 2013-06-28 | 2015-01-01 | Magnachip Semiconductor, Ltd. | Semiconductor-based hall sensor |
| CN105810815A (en) * | 2015-01-20 | 2016-07-27 | 精工半导体有限公司 | Hall element |
| CN206293470U (en) * | 2016-08-23 | 2017-06-30 | 苏州矩阵光电有限公司 | A kind of Hall element |
| CN106449969A (en) * | 2016-12-01 | 2017-02-22 | 上海南麟电子股份有限公司 | Hall sensor and preparation method thereof |
| CN107195773A (en) * | 2017-06-26 | 2017-09-22 | 中国科学技术大学 | P-type semiconductor's hetero-junctions Hall rod, its preparation and application and purposes |
| CN207541246U (en) * | 2017-11-21 | 2018-06-26 | 上海南麟电子股份有限公司 | A kind of Hall sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110418973A (en) * | 2017-06-12 | 2019-11-05 | 西部数据技术公司 | magnetic sensor using spin Hall effect |
| CN110418973B (en) * | 2017-06-12 | 2022-04-29 | 西部数据技术公司 | Magnetic sensor using spin hall effect |
| CN112540329A (en) * | 2020-10-20 | 2021-03-23 | 中国科学院微电子研究所 | Hall sensor and preparation and test method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107765197B (en) | 2020-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shan et al. | An inverting TENG to realize the AC mode based on the coupling of triboelectrification and air-breakdown | |
| CN102313563B (en) | Hall sensor | |
| CN107765197A (en) | A kind of Hall sensor | |
| KR101797197B1 (en) | Impulse generator and generator set | |
| TWI668809B (en) | Hall element | |
| CN101923419A (en) | Self-capacitance touch screen with one-dimensional electrodes and coordinate data processing method thereof | |
| CN103364460A (en) | Friction-nanogenerator-based molecular sensor | |
| CN207541246U (en) | A kind of Hall sensor | |
| Mori et al. | Dominant factors inducing electro-conjugate fluid flow | |
| KR20170053993A (en) | Triboelectric nanogenerator by using wind power | |
| CN102646930A (en) | Static electricity removing apparatus and method thereof | |
| CN103954789B (en) | Ion velocity distribution transient measurement device and method | |
| CN103780140B (en) | A kind of coplanar type friction generator | |
| TWI596886B (en) | Semiconductor device | |
| CN104625368A (en) | Control device of inverter transferred arc type cutting machine | |
| CN111896897B (en) | Device for guiding charge carriers and use thereof | |
| CN208494570U (en) | A kind of purification device | |
| CN206301709U (en) | A kind of arc-extinguishing mechanism of nonpolarity D.C. contactor | |
| US9407172B2 (en) | Vibration power generator | |
| CN209526666U (en) | Linear micro machine | |
| CN110515017A (en) | A kind of hypersensitivity magnetic field sensor | |
| Schor et al. | Non-invasive sorting of lipid producing microalgae with dielectrophoresis using microelectrodes | |
| CN205534240U (en) | Exit seal structure of modified device of pellicular zone material serialization plasma | |
| Li et al. | Collaborative research from National Center for Nanoscience and Technology, Zhengzhou University and the GBA Research Innovation Institute for Nanotechnology, China. Enhanced field emission stability of vertically aligned carbon nanotubes through anchoring for X-ray imaging applications | |
| CN104423755B (en) | Touch detection component, contactor control device and portable electric appts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |