CN87215461U

CN87215461U - Symmetry hall device

Info

Publication number: CN87215461U
Application number: CN 87215461
Authority: CN
Inventors: 付∴; 王林海; 袁炳辉
Original assignee: HEBEI POLYTECHNIC COLLEGE
Current assignee: HEBEI POLYTECHNIC COLLEGE
Priority date: 1987-11-14
Filing date: 1987-11-14
Publication date: 1988-12-14

Abstract

The utility model provides a symmetrical Hall device, which is a novel electronic device. Two symmetrical slots are arranged on a control electric current pole based on a Hall device with a cruciform structure. The four angles on the cruciform crossed position are chamferings in the shape of a circular arc, and four positioning electrodes in the shape of a circular arc are arranged at the cruciform crossed position. The Hall device with the structure has the advantages of high sensitivity, high linearity and high output. The utility model can be used as an ideal magnet sensitive sensor in the technical field of computers, automatization, etc. and can be used for measuring a magnetic field in a radio technique.

Description

Symmetry hall device

This utility model belongs to electronic devices and components.

Hall device mainly adopts rhombus and decussate texture both at home and abroad at present.The hall device of these two kinds of structures is the shortcoming of various degrees all: though the not equipotential electromotive force of diamond structure is little, and low, the poor linearity of Hall output; The not equipotential electromotive force of decussate texture is bigger, and the linearity is relatively poor, thereby makes that the sensitivity of hall device is relatively poor.

The purpose of this utility model is to avoid above-mentioned weak point of the prior art, and provides a kind of Hall output high, the symmetric form hall device that the equipotential electromotive force is not little, the linearity good, sensitivity is good.

The purpose of this utility model can reach by following measure: the symmetric form hall device adopts decussate texture, has the groove of two symmetries on extremely in Control current, and groove width S is greater than 5 microns, less than 60 microns; Four chamferings that the angle is a circular arc of right-angled intersection place, the chamfering diameter phi is greater than 1/10 (the wide H of the element long a-body of output) micron, less than 2/3 (a-H) micron.Four keeper electrodes also are circular arc.

Symmetric form hall device schematic diagram as shown in Figure 1; 1,2 ends are the Control current utmost point among the figure, and 3,4 ends are Hall electrode, and 5 is groove, and 6 is chamfering, and 7 is keeper electrode, and a is that element output is long, and b is that the element input is long, and H is that body is wide, and S is a groove width.

Be described in further detail below in conjunction with embodiment:

Embodiment 1

Adopt gallium arsenide semiconductor material to make Hall plate ((100) crystal orientation), element output long a=540 micron, import long b=480 micron, the wide H=180 micron of body, Hall plate is thick to be 10 microns, groove width S=40 micron, right-angled intersection place chamfering diameter phi=55 microns, keeper electrode is semicircle, and test result is as symmetric form 1 in the table.

Embodiment 2

Adopt gallium arsenide semiconductor material to make Hall plate ((100) crystal orientation), the long a=540 micron of element output, the long b=480 micron of element input, the wide H=180 micron of body Hall plate is thick to be 10 microns, groove width S=30 micron, right-angled intersection place chamfering diameter phi=75 microns, keeper electrode are semicircle, and test result is as symmetric form 2 in the table.

The GaAs Hall device parameter relatively

Item model	Sensitivity mv/0.1T	Equipotential electromotive force mv not	Electricity linearity %	Magnetic degree %
					Symmetric form 1	1.94×10	6.56×10 ^-1	2.1×10 ^-1	2.1×10 ^-1
Symmetric form 2	2.34×10	1.20×10 ^-1	4.2×10 ^-1	0.0
					Cross 1	1.20×10	8.60×10 ^-1	4.5×10 ^-1	4.2×10 ^-1
Cross 2	1.15×10	7.43×10 ^-1	8.1×10 ^-1	1.6×10 ^-1

Adopt the effect of the symmetry hall device of said structure to be summarized as follows:

1. owing to extremely go up symmetrical two grooves that have at the control electric current, play the orientation that electronics flows, can reduce the end effect of element, thus the linearity and the sensitivity that improve hall device.

2. because right-angled intersection place is the chamfering of circular arc, and the distribution that can evacuate power line makes its distortion little, electric field is unlikely to concentrate on certain a bit, thereby can reduce volt age offset, improves the linearity of hall device.

3. because four keeper electrodes are done in the arc-shapedly, be pressed in easily on the centrosymmetric position in the time of can making pressure welding, thereby reduce contact resistance, reduce not equipotential electromotive force, improve the sensitivity of hall device.

Claims

1, a kind of criss-cross symmetric form hall device is characterized in that: have the groove of two symmetries on extremely in Control current, and four chamferings that the angle is a circular arc of right-angled intersection place, four keeper electrodes also are circular arc.

2, according to the said symmetric form hall device of claim 1, it is characterized in that: groove width S is greater than 5 microns, and less than 60 microns, circular arc chamfering diameter phi is greater than 1/10 (the wide H of element long a one body of output) micron, less than 2/3 (a-H) micron.