CN107732213B - 一种用于锂电池的氮化锡/硅负极材料及其制备方法 - Google Patents
一种用于锂电池的氮化锡/硅负极材料及其制备方法 Download PDFInfo
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- CN107732213B CN107732213B CN201711013690.4A CN201711013690A CN107732213B CN 107732213 B CN107732213 B CN 107732213B CN 201711013690 A CN201711013690 A CN 201711013690A CN 107732213 B CN107732213 B CN 107732213B
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- China
- Prior art keywords
- cathode material
- tin
- silicium cathode
- nitride
- preparation
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000010406 cathode material Substances 0.000 title claims abstract description 40
- -1 tin nitride Chemical class 0.000 title claims abstract description 29
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052744 lithium Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 55
- 229920005591 polysilicon Polymers 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 38
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract 2
- 230000007246 mechanism Effects 0.000 claims description 7
- 238000005488 sandblasting Methods 0.000 claims description 7
- 239000007773 negative electrode material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 8
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 24
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 18
- 239000007921 spray Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000004062 sedimentation Methods 0.000 description 6
- 238000005477 sputtering target Methods 0.000 description 6
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 5
- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009831 deintercalation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000681 Silicon-tin Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/364—Composites as mixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
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CN201711013690.4A CN107732213B (zh) | 2017-10-25 | 2017-10-25 | 一种用于锂电池的氮化锡/硅负极材料及其制备方法 |
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CN201711013690.4A CN107732213B (zh) | 2017-10-25 | 2017-10-25 | 一种用于锂电池的氮化锡/硅负极材料及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN107732213A CN107732213A (zh) | 2018-02-23 |
CN107732213B true CN107732213B (zh) | 2019-12-03 |
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CN113161230B (zh) * | 2020-12-14 | 2022-05-17 | 安徽安芯电子科技股份有限公司 | 磷硼同步一次扩散缓变结芯片的扩散工艺 |
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CN100553025C (zh) * | 2005-01-26 | 2009-10-21 | 松下电器产业株式会社 | 锂二次电池用负极和使用其的锂二次电池及它们的制造方法 |
CN1945881A (zh) * | 2006-11-02 | 2007-04-11 | 复旦大学 | 全固态薄膜锂电池及其制造方法 |
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Inventor after: Wang Feirong Inventor after: Xu Yinmei Inventor after: Wang Tao Inventor before: Wang Tao |
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Effective date of registration: 20191113 Address after: 518100 Guangdong city of Shenzhen province Baoan District Songgang Furong Street Tantou Community Road No. 9 building 607 A Applicant after: Shenzhen flying Technology Co. Ltd. Address before: No. 019, new group of Wang Yang village, Ma Temple Town, Huaining County, Anqing, Anhui Province Applicant before: Wang Tao |