CN107731989A - 沉降式发光二极管 - Google Patents

沉降式发光二极管 Download PDF

Info

Publication number
CN107731989A
CN107731989A CN201711164668.XA CN201711164668A CN107731989A CN 107731989 A CN107731989 A CN 107731989A CN 201711164668 A CN201711164668 A CN 201711164668A CN 107731989 A CN107731989 A CN 107731989A
Authority
CN
China
Prior art keywords
led chip
substrate
standing groove
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711164668.XA
Other languages
English (en)
Inventor
王友平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FANTASY ELECTRONIC Co Ltd
Original Assignee
FANTASY ELECTRONIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FANTASY ELECTRONIC Co Ltd filed Critical FANTASY ELECTRONIC Co Ltd
Priority to CN201711164668.XA priority Critical patent/CN107731989A/zh
Publication of CN107731989A publication Critical patent/CN107731989A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种沉降式发光二极管,包括基板,所述基板表面设置有导电线路,所述基板上开设有放置槽,所述放置槽内设置有LED芯片,所述LED芯片上的焊盘与基板上的导电线路相连;封装胶填充于LED芯片与放置槽之间间隙内,所述放置槽的槽口处设置有保护层。通过在基板上设置有放置槽,并在其内安装LED芯片,减少LED芯片的占用面积,降低LED芯片与基板的总体厚度,增加了基板单位面积上的LED芯片安装量,有利于基板集约化应用,同时缩减了材料应用,降低了成本。

Description

沉降式发光二极管
技术领域
本发明涉及照明设备领域,尤其涉及一种沉降式发光二极管。
背景技术
目前授权公告号为CN204375787U的中国实用新型专利提出了一种贴片式发光二极管,将发光芯片固设在基板上,并通过光环台阶的设计来减少光线的溢光,进而提高光亮度。然而上述方式制作而成的贴片式发光二极管存在发光芯片占用空间大、整体厚度大(发光芯片与基板的总厚度),不能够很好的适应终端产品轻薄化的需求。
发明内容
为克服上述缺点,本发明的目的在于提供一种能够降低整体厚度的沉降式发光二极管。
为了达到以上目的,本发明采用的技术方案是:一种沉降式发光二极管,包括基板,所述基板表面设置有导电线路,所述基板上开设有放置槽,所述放置槽内设置有LED芯片,所述LED芯片上的焊盘与基板上的导电线路相连;封装胶填充于LED芯片与放置槽之间间隙内,所述放置槽的槽口处设置有保护层。上述LED芯片可以为倒置芯片或正装芯片,其中采用倒置芯片能够减少了金线封装工艺,利于减少LED芯片的占用面积。
本发明通过在基板上设置有放置槽,并在其内安装LED芯片,降低LED芯片与基板的总体厚度,增加了基板单位面积上的LED芯片安装量,有利于基板集约化应用,同时缩减了材料应用,降低了成本。
优选地,所述放置槽呈圆柱形结构,所述LED芯片居中设置在放置槽内。通过圆柱状的放置槽便于LED芯片安装,同时LED芯片发射产生的光线能够均匀的向放置槽的槽口射出,有助于保证槽口外部光亮度不会出现明显的偏差(光亮度偏差小,肉眼无法区分)。
优选地,所述LED芯片的边缘与所述放置槽的内侧壁之间的最短距离为N,其中:0.1mm≤N≤2mm。通过限制LED芯片与放置槽之间的距离,最大限度的提高基板集约化,提高单位面积上的LED芯片的使用量。
优选地,所述基板的厚度为0.15mm,所述放置槽的深度为0.1mm,所述LED芯片的厚度为0.1mm,所述保护层的厚度为0.05mm。
优选地,所述基板为玻璃纤维板。利于玻璃纤维板具有较高的机械性能和介电性能,提高基板本身的强度和导电性能,进而能够降低基板的厚度而不影响基板的使用。
优选地,所述LED芯片上的焊盘为SMD型焊盘。使LED芯片不受走线影响。
附图说明
图1为本发明实施例的沉降式发光二极管侧视图;
图2为本发明实施例的沉降式发光二极管俯视图。
图中:
1-基板;2-LED芯片;3-封装胶;4-保护层;5-放置槽。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域技术人员理解,从而对本发明的保护范围做出更为清楚明确的界定。
实施例
参见附图1、图2所示,本实施例中的一种沉降式发光二极管,包括基板1,所述基板1表面设置有导电线路,所述基板1上开设有放置槽5,所述放置槽5内设置有LED芯片2(优选倒置芯片,可以减少金线封装工艺,但也可以采用正装芯片),所述LED芯片2上的焊盘与基板1上的导电线路相连;封装胶3填充于LED芯片2与放置槽5之间间隙内,所述放置槽5的槽口处设置有保护层4。
本实施例中所述放置槽5呈圆柱形结构,所述LED芯片2居中设置在放置槽5内。其中:LED芯片2的边缘与所述放置槽的内侧壁之间的最短距离为N,其中:0.1mm≤N≤2mm。本实施例中N采用0.2mm。
具体来说,本实施例中的基板1为玻璃纤维板,其厚度为0.15mm,其上的放置槽5为0.1mm,放置槽5内的LED芯片2的厚度为0.1mm,保护层的厚度为0.05mm,使得整个沉降式发光二级管的厚度控制在0.2mm内。在本实施例中的保护层4为保护胶组成。同时为了方便LED芯片2,使其不受走线影响,LED芯片2上的焊盘为SMD型焊盘。
从上述描述可知,本发明通过在基板1上设置有放置槽5,并在其内安装LED芯片2,减少了金线封装工艺,进而能够减少LED芯片的占用面积,降低LED芯片2与基板1的总体厚度,增加了基板1单位面积上的LED芯片2安装量,有利于基板1集约化应用,同时缩减了材料应用,降低了成本。
封装胶3填充于LED芯片2与放置槽5之间间隙内,需要将封装胶3融化后覆盖在LED芯片2的引脚上,在这封装胶3固化的过程中,上述引脚处容易出现空洞,究其原因是在封装胶融化过程中出现气泡未排出引起。本实施例中为了引脚处空洞现场,LED芯片2的下端面设置成齿状结构,当其下压时能够将封装胶3融化过程中出现气泡未排出,从而解决引脚处的封装胶空洞问题。
以上实施方式只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人了解本发明的内容并加以实施,并不能以此限制本发明的保护范围,凡根据本发明精神实质所做的等效变化或修饰,都应涵盖在本发明的保护范围内。

Claims (6)

1.一种沉降式发光二极管,包括基板(1),所述基板(1)表面设置有导电线路,其特征在于:所述基板(1)上开设有放置槽(5),所述放置槽(5)内设置有LED芯片(2),所述LED芯片(2)上的焊盘与基板(1)上的导电线路相连;封装胶(3)填充于LED芯片(2)与放置槽(5)之间的间隙内,所述放置槽(5)的槽口处设置有保护层(4)。
2.根据权利要求1所述的沉降式发光二极管,其特征在于:所述放置槽(5)呈圆柱形结构,所述LED芯片(2)居中设置在放置槽(5)内。
3.根据权利要求2所述的沉降式发光二极管,其特征在于:所述LED芯片(2)的边缘与所述放置槽(5)的内侧壁之间的最短距离为N,其中:0.1mm≤N≤2mm。
4.根据权利要求1所述的沉降式发光二极管,其特征在于:所述LED芯片(2)为倒置芯片或正装芯片。
5.根据权利要求1所述的沉降式发光二极管,其特征在于:所述基板(1)为玻璃纤维板。
6.根据权利要求1所述的沉降式发光二极管,其特征在于:所述LED芯片(2)上的焊盘为SMD型焊盘。
CN201711164668.XA 2017-11-21 2017-11-21 沉降式发光二极管 Pending CN107731989A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711164668.XA CN107731989A (zh) 2017-11-21 2017-11-21 沉降式发光二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711164668.XA CN107731989A (zh) 2017-11-21 2017-11-21 沉降式发光二极管

Publications (1)

Publication Number Publication Date
CN107731989A true CN107731989A (zh) 2018-02-23

Family

ID=61217748

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711164668.XA Pending CN107731989A (zh) 2017-11-21 2017-11-21 沉降式发光二极管

Country Status (1)

Country Link
CN (1) CN107731989A (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050072981A1 (en) * 2002-02-19 2005-04-07 Ryoma Suenaga Light-emitting device and process for producing thereof
JP2006216764A (ja) * 2005-02-03 2006-08-17 Ngk Spark Plug Co Ltd 発光素子実装用配線基板
CN104600176A (zh) * 2014-12-18 2015-05-06 上海大学 倒装led基板结构
CN104638091A (zh) * 2014-12-18 2015-05-20 上海大学 Led玻璃基板
CN105591015A (zh) * 2014-11-10 2016-05-18 Lg伊诺特有限公司 发光器件封装和包括该发光器件封装的照明系统
CN107180904A (zh) * 2017-05-12 2017-09-19 广东工业大学 一种紫外led封装器件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050072981A1 (en) * 2002-02-19 2005-04-07 Ryoma Suenaga Light-emitting device and process for producing thereof
JP2006216764A (ja) * 2005-02-03 2006-08-17 Ngk Spark Plug Co Ltd 発光素子実装用配線基板
CN105591015A (zh) * 2014-11-10 2016-05-18 Lg伊诺特有限公司 发光器件封装和包括该发光器件封装的照明系统
CN104600176A (zh) * 2014-12-18 2015-05-06 上海大学 倒装led基板结构
CN104638091A (zh) * 2014-12-18 2015-05-20 上海大学 Led玻璃基板
CN107180904A (zh) * 2017-05-12 2017-09-19 广东工业大学 一种紫外led封装器件

Similar Documents

Publication Publication Date Title
CN201014273Y (zh) 一种集成封装的led日光灯
US7700965B2 (en) Light emitting diode
CN201430161Y (zh) 一种led器件的封装结构
CN102881685B (zh) Led cob封装光源
CN101338865A (zh) 一种低衰减高光效led照明装置及制备方法
CN102593320B (zh) Led光源及其封装方法
CN105529325A (zh) 一种双色温led封装结构
CN107768366B (zh) 一种填埋热保护ic的cob封装及其封装方法
CN201282151Y (zh) 一种大功率发光二极管器件
CN103765078A (zh) 照明装置
CN107731989A (zh) 沉降式发光二极管
US7233106B2 (en) LED chip capping construction
CN202736976U (zh) 一种led模组
CN207753038U (zh) 沉降式发光二极管
CN103165763B (zh) 发光二极管的制造方法
CN202040633U (zh) 广域发光的灯串结构
CN102338292A (zh) 发光二极管装置
CN214753757U (zh) 一种倒装led发光器件
CN203466190U (zh) 一种基于光转换体的cob光源
CN201681927U (zh) 一种大功率led芯片集成封装结构
CN103855146A (zh) Led灯丝及照明器具
CN210110833U (zh) 一种大功率led发光器件封装结构
CN203787425U (zh) 一种led灯丝及照明器
CN202172089U (zh) 发光二极管改良结构
CN208794097U (zh) 一种光源结构

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20180223