CN107710617B - Switching device - Google Patents

Switching device Download PDF

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Publication number
CN107710617B
CN107710617B CN201680033447.6A CN201680033447A CN107710617B CN 107710617 B CN107710617 B CN 107710617B CN 201680033447 A CN201680033447 A CN 201680033447A CN 107710617 B CN107710617 B CN 107710617B
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China
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semiconductor
relay
control signal
circuit
control
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CN107710617A (en
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冈田洋
久保知士
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit

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  • Electronic Switches (AREA)
  • Keying Circuit Devices (AREA)
  • Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
  • Relay Circuits (AREA)

Abstract

The invention provides a hybrid relay combining a semiconductor relay and a mechanical relay, which is easily controlled by 1 control signal. A switching device (1) is provided with a semiconductor relay (2), a mechanical relay (3), and a control circuit (4). The semiconductor relay (2) opens and closes the power supply circuit. The mechanical relay (3) has a contact section (32) electrically connected in parallel to the semiconductor relay (2), and opens and closes the power supply circuit by turning on/off the contact section (32) in response to a control signal. The semiconductor relay (2) has a semiconductor switch (2B). The control circuit (4) is configured to: the semiconductor switch (2B) is controlled by receiving a control signal, so that the timing of turning on/off the semiconductor switch (2B) is delayed from the timing of turning on/off the contact part (32) of the mechanical relay (3).

Description

Switching device
Technical Field
The present invention relates generally to switching devices, and more particularly to switching devices having mechanical relays and semiconductor relays.
Background
Conventionally, a dc switch for opening or closing a dc current path through which a dc current flows is known, and is disclosed in, for example, document 1 (japanese patent application laid-open No. 2012-28193). The DC switch includes an electronic on-off switch inserted into a DC current flow path and a mechanical on-off switch connected in parallel to the electronic on-off switch. The dc switch further includes a switch control circuit that controls a time difference between opening and closing of the mechanical opening/closing switch and the electronic opening/closing switch.
And the switch control circuit controls so that the mechanical opening and closing switch is set to be closed after a given time in which the electronic opening and closing switch is set to be closed. This reduces the power loss of the electronic on/off switch when the dc current flow path is turned on.
However, in the above-described conventional example, in order to provide a time difference between the opening and closing of the electronic opening/closing switch (semiconductor relay) and the mechanical opening/closing switch (mechanical relay), it is necessary to individually supply control signals to the electronic opening/closing switch and the mechanical opening/closing switch to control them. Therefore, the conventional example has a problem that it is difficult to control a hybrid relay combining a semiconductor relay and a mechanical relay with 1 control signal.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object thereof is to easily control a hybrid relay in which a semiconductor relay and a mechanical relay are combined, by 1 control signal.
A switching device according to one embodiment of the present invention includes a semiconductor relay, a mechanical relay, and a control circuit. The semiconductor relay opens and closes a power supply circuit from a power supply to a load. The mechanical relay has a contact portion electrically connected in parallel with the semiconductor relay, and opens and closes the power supply circuit by turning on/off the contact portion in response to a control signal input from the outside. The control circuit receives the control signal to control the semiconductor relay. The semiconductor relay has a semiconductor switch. The semiconductor switch turns on/off the power supply circuit in accordance with the charge accumulated in the capacitor element. The control circuit is configured to: the timing at which the semiconductor switch is turned from on to off is delayed from the timing at which the contact portion of the mechanical relay is turned from on to off by controlling the semiconductor switch.
Drawings
Fig. 1 is a schematic diagram showing a switchgear according to embodiment 1 of the present invention.
Fig. 2 is a schematic diagram of a circuit using the same switching device.
Fig. 3 is an explanatory diagram of the operation of the switching device described above.
Fig. 4 is a schematic diagram showing a switchgear according to a modification of embodiment 1 of the present invention.
Fig. 5 is an explanatory diagram of the operation of the switch device described above.
Fig. 6 is a schematic diagram showing a switchgear according to embodiment 2 of the present invention.
Fig. 7 is a diagram showing an example of the charge and discharge path in the switching device described above.
Fig. 8 is a diagram showing an example of an impedance circuit in the same switching device.
Fig. 9 is an explanatory diagram of the operation of the switching device in the case where the power supply is an ac power supply.
Fig. 10 is an explanatory diagram of the operation of the switching device in the case where the power supply is a dc power supply.
Fig. 11 is a diagram showing an example of an impedance circuit in the above-described switching device.
Fig. 12 is a diagram showing another example of the impedance circuit in the above-described switching device.
Detailed Description
The following describes in detail embodiment 1, a modification of embodiment 1, and a switching device according to embodiment 2 of the present invention. However, the configuration described below is only an example of the present invention, and the present invention is not limited to the configuration described below, and various modifications can be made in accordance with the design and the like without departing from the technical idea of the present invention.
(embodiment mode 1)
As shown in fig. 1 and 2, a switching device 1 according to embodiment 1 of the present invention includes a semiconductor relay 2, a mechanical relay 3, and a control circuit 4. The semiconductor relay 2 opens and closes a power supply circuit from the power supply a1 to the load B1. The mechanical relay 3 has a contact portion 32 electrically connected in parallel with the semiconductor relay 2, and turns on/off the contact portion 32 in response to a control signal input from the outside, thereby opening/closing the power supply circuit. The control circuit 4 receives the control signal to control the semiconductor relay 2.
The semiconductor relay 2 has a semiconductor switch 2B. The semiconductor switch 2B is turned on/off in accordance with the charge accumulated in the capacitor element (capacitor 42), thereby opening/closing the power supply circuit. The control circuit 4 is configured to: by controlling the semiconductor switch 2B, the timing of turning the semiconductor switch 2B from on to off is delayed from the timing of turning the contact portion 32 of the mechanical relay 3 from on to off.
< constitution >
The switching device 1 of the present embodiment is explained in detail below. In the following description, the "on signal among the input control signals" means that the "control signal is at a high level". The "off signal out of the input control signals" means that the "control signals are at a low level".
As shown in fig. 1, the switching device 1 of the present embodiment includes a pair of input terminals 101 and 102 (a1 st input terminal 101 and a 2 nd input terminal 102) and a pair of output terminals 111 and 112 (a1 st output terminal 111 and a 2 nd output terminal 112). A pair of input terminals 201 and 202 (a1 st input terminal 201 and a 2 nd input terminal 202) of the semiconductor relay 2 are electrically connected to the pair of input terminals 101 and 102 via the control circuit 4. The pair of input terminals 301 and 302 (the 1 st input terminal 301 and the 2 nd input terminal 302) of the mechanical relay 3 are electrically connected to the pair of input terminals 101 and 102. The pair of output terminals 211, 212 (1 st output terminal 211, 2 nd output terminal 212) of the semiconductor relay 2 and the pair of output terminals 311, 312 (1 st output terminal 311, 2 nd output terminal 312) of the mechanical relay 3 are electrically connected to the pair of output terminals 111, 112. That is, the mechanical relay 3 is electrically connected in parallel with the semiconductor relay 2.
The switching device 1 of the present embodiment is turned on by at least one of the semiconductor relay 2 and the mechanical relay 3 being turned on. In addition, the switching device 1 of the present embodiment is turned off by turning off both the semiconductor relay 2 and the mechanical relay 3.
A control signal is input to the pair of input terminals 101 and 102 from, for example, a microcomputer (microcomputer). Further, the zener diode ZD1 is electrically connected between the pair of input terminals 101 and 102 so that an excessive voltage is not input.
As shown in fig. 2, the power source a1 and the load B1 are electrically connected to the pair of output terminals 111 and 112. Therefore, when the pair of output terminals 111 and 112 are non-conductive (the switching device 1 is turned off), no power is supplied from the power source a1 to the load B1. When the pair of output terminals 111 and 112 are turned on (the switching device 1 is turned on), power is supplied from the power source a1 to the load B1. That is, the switching device 1 of the present embodiment opens and closes the power supply circuit from the power supply a1 to the load B1. In the switching device 1 of the present embodiment, a dc power supply is used as the power supply a1, but an ac power supply may be used.
Load B1 is, for example, an Electric Vehicle (EV). The load B1 may be, for example, a safety device, an entertainment device, a medical device, a battery system, a heater, a DC motor, or the like. When the power source a1 is an ac power source, the load B1 is a load operated by being supplied with ac power. When the power source a1 is a dc power source, the load B1 is a load operated by supplying dc power. The load B1 may be a resistive load or an inductive load. In the present embodiment, the load B1 is, for example, a coil provided in the shutter, and is an inductive load.
The semiconductor relay 2 is a so-called contactless relay, and includes a light emitting element 2A, a semiconductor switch 2B, and a light receiving element 2C. The light emitting element 2A and the semiconductor switch 2B are electrically insulated from each other. That is, in the switching device 1 of the present embodiment, the semiconductor relay 2 electrically insulates the pair of input terminals 201 and 202 and the pair of output terminals 211 and 212 by using the light emitting element 2A and the light receiving element 2C. In other words, the semiconductor relay 2 can be said to include the insulating portions 2A and 2C that electrically insulate the primary side (the pair of input terminals 101 and 102 side) from the secondary side (the pair of output terminals 111 and 112 side).
The insulating portions 2A and 2C may have other configurations. For example, the semiconductor relay 2 may be configured to electrically insulate the pair of input terminals 201 and 202 from the pair of output terminals 211 and 212 by using a capacitor instead of the light emitting element 2A and the light receiving element 2C. In addition, when a capacitor is used, the semiconductor relay 2 needs to further include a drive circuit for driving the semiconductor switch 2B.
The light emitting element 2A is configured to convert an electric signal input to the pair of input terminals 201 and 202 into light. In the present embodiment, the light emitting element 2A is a light emitting diode. The anode of the led is electrically connected to the 1 st input 201, and the cathode is electrically connected to the 2 nd input 202. The light emitting element 2A emits light in response to an on signal among the control signals input to the pair of input terminals 201 and 202. The light emitting element 2A does not emit light while being in the on state of the off signal among the control signals. The number of light emitting diodes constituting the light emitting element 2A is not limited to 1, and may be plural.
Here, if an on signal among control signals for driving the mechanical relay 3 is directly input to the semiconductor relay 2, an excessive current may flow through the light emitting element 2A. Therefore, in the switching device 1 of the present embodiment, the current adjusting resistor 11 is electrically connected in series to the light emitting element 2A. The resistor 11 prevents an excessive current from flowing through the light emitting element 2A.
The light receiving element 2C is configured to receive the light emitted from the light emitting element 2A and generate a photo-electromotive force. In the present embodiment, the light receiving element 2C is formed of a photodiode array in which a plurality of photodiodes are electrically connected in series.
The Semiconductor switch 2B is an n-channel enhancement MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The gate of the semiconductor switch 2B is electrically connected to one end of the light receiving element 2C on the high potential side. The drain of the semiconductor switch 2B is electrically connected to the 1 st output terminal 111. The source of the semiconductor switch 2B is electrically connected to the low-potential-side end of the light-receiving element 2C and the 2 nd output terminal 112. The semiconductor switch 2B is configured to be turned on/off in accordance with the charge accumulated in the gate capacitance. The "gate capacitance" refers to a capacitor (generally referred to as "gate input capacitance") existing between the gate and the source of the semiconductor switch 2B and a capacitor (generally referred to as "gate output capacitance") existing between the gate and the drain.
In the present embodiment, the number of the semiconductor switches 2B may be 1 or 2. That is, when the power source a1 is an ac power source, the switching device 1 requires 2 semiconductor switches 2B. In the present embodiment, the semiconductor switch 2B is an enhancement MOSFET, and may be a semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor).
The semiconductor relay 2 further includes a semiconductor element 2D and a resistor 2E as a charge/discharge path for charging and discharging the gate capacitance of the semiconductor switch 2B. The semiconductor element 2D is an n-channel depletion MOSFET. The drain of the semiconductor element 2D is electrically connected to one end of the light receiving element 2C on the high potential side. The gate of the semiconductor element 2D is electrically connected to one end of the light receiving element 2C on the low potential side. The source of the semiconductor element 2D is electrically connected to one end of the light receiving element 2C on the low potential side via the resistor 2E. In other words, the resistor 2E is electrically connected to the gate-source of the semiconductor element 2D.
The switching device 1 is also provided with a control circuit 4 and a Varistor (Varistor) VR 1. The varistor VR1 is electrically connected to a pair of output terminals 211, 212. The varistor VR1 protects the semiconductor switch 2B from an excessive back electromotive force applied between the pair of output terminals 211, 212 when the switching device 1 is turned off. In addition, the varistor VR1 is not required when the load B1 is a resistive load.
The control circuit 4 has a delay circuit 5 and a buffer circuit 6. The delay circuit 5 includes a resistor 41 and a capacitor 42. The resistor 41 is electrically connected between the 1 st input terminal 101 and the input terminal of the buffer circuit 6. The capacitor 42 is electrically connected between the resistor 41 and the 2 nd input terminal 102, and a connection point of the input end of the buffer circuit 6. The delay circuit 5 is configured to: the control signal input to the pair of input terminals 101 and 102 is delayed, and the delayed control signal is input to the pair of input terminals 201 and 202 of the semiconductor relay 2. Therefore, in the switching device 1 of the present embodiment, the timing at which the control signal is input to the semiconductor relay 2 can be delayed from the timing at which the control signal is input to the mechanical relay 3.
The snubber circuit 6 is electrically connected between the output terminal of the high voltage side of the delay circuit 5 and the 1 st input terminal 201 of the semiconductor relay 2. The buffer circuit 6 receives a control signal delayed by the delay circuit 5. Then, the buffer circuit 6 does not output the control signal until the voltage of the input control signal reaches the threshold voltage, and outputs the control signal when the voltage reaches the threshold voltage. For example, when an on signal among the control signals is input to the buffer circuit 6, the buffer circuit 6 outputs the on signal when the voltage of the on signal is higher than the threshold voltage. In addition, when the off signal among the control signals is input to the buffer circuit 6, the buffer circuit 6 outputs the off signal if the voltage of the off signal is lower than the threshold voltage.
That is, the buffer circuit 6 is configured to: the control signal is input through the delay circuit 5, and when the voltage of the control signal reaches the threshold voltage, the control signal is output. Therefore, the buffer circuit 6 converts the control signal whose voltage gently changes in accordance with the time constant of the delay circuit 5 into a rectangular wave-shaped control signal, and outputs the converted control signal to the light emitting element 2A. Therefore, in the switching device 1 of the present embodiment, since the control signal whose voltage gently changes with the passage of time is not input to the semiconductor relay 2, the time for which the semiconductor switch 2B operates in the active region can be shortened. As a result, in the switching device 1 of the present embodiment, the stability of the operation of the semiconductor switch 2B can be improved.
The operation of the semiconductor relay 2 will be described below. When an on signal among the control signals is input to the pair of input terminals 101 and 102, the charge starts to be accumulated in the capacitor 42 of the delay circuit 5. Therefore, the voltage of the control signal via the delay circuit 5 gradually increases from the low level to the high level with the passage of time. When the charge is sufficiently accumulated in the capacitor 42 and the voltage of the on signal via the delay circuit 5 reaches the threshold voltage of the buffer circuit 6, the buffer circuit 6 outputs the on signal, and the light-emitting element 2A emits light.
Then, the light receiving element 2C receives the light emitted from the light emitting element 2A to generate a photovoltaic force. Then, a current flows from the light receiving element 2C to the semiconductor element 2D and the resistor 2E, so that a voltage drop occurs in the resistor 2E, and the semiconductor element 2D is turned off by the voltage drop. Therefore, a current flows from the light receiving element 2C to the gate of the semiconductor switch 2B, the gate capacitance of the semiconductor switch 2B is charged, and the semiconductor switch 2B is turned on. Thereby, the pair of output terminals 111 and 112 are electrically connected to each other.
When the off signal among the control signals is input to the pair of input terminals 101 and 102, the capacitor 42 of the delay circuit 5 starts to be discharged. Therefore, the voltage of the control signal via the delay circuit 5 gradually decreases from the high level to the low level with the passage of time. When the capacitor 42 is sufficiently discharged and the voltage of the off signal via the delay circuit 5 reaches the threshold voltage of the buffer circuit 6, the buffer circuit 6 outputs the off signal and the light-emitting element 2A does not emit light any more.
Then, since the light receiving element 2C does not generate any photovoltaic force, the voltage drop in the resistor 2E does not occur, and the semiconductor element 2D is turned on. Thereby, the gate capacitance of the semiconductor switch 2B is discharged through the path of the semiconductor element 2D, and the semiconductor switch 2B is turned off. Thereby, the pair of output terminals 111 and 112 are non-conductive.
That is, the semiconductor switch 2B is turned on/off in accordance with the charge accumulated in the capacitor element (capacitor 42), thereby opening/closing the power supply circuit from the power supply a1 to the load B1. In other words, the semiconductor relay 2 opens and closes the power supply circuit from the power supply a1 to the load B1 in response to a control signal input from the outside.
As described above, the semiconductor relay 2 includes the light emitting element 2A and the light receiving element 2C. The semiconductor switch 2B is turned on/off by a photovoltaic force generated by the light receiving element 2C. Therefore, the switching device 1 of the present embodiment has an advantage that the potential difference between the input and output hardly affects the on/off of the semiconductor switch 2B. Whether or not this structure is adopted in the semiconductor relay 2 is arbitrary.
The semiconductor relay 2 is not limited to the circuit configuration shown in fig. 1. For example, in the semiconductor relay 2, the semiconductor switch 2B may be turned on/off according to the presence or absence of light emitted from the light emitting element 2A.
The mechanical relay 3 is a so-called contact relay (e.g., an electromagnetic relay) and includes a coil 31 and a contact portion 32. The coil 31 has its 1 st terminal electrically connected to the 1 st input terminal 301 and its 2 nd terminal electrically connected to the 2 nd input terminal 302. When a control signal is input to the pair of input terminals 301 and 302, the coil 31 is excited.
The contact portion 32 has its 1 st end electrically connected to the 1 st output terminal 311 and its 2 nd end electrically connected to the 2 nd output terminal 312. The contact portion 32 includes a fixed contact and a movable contact. The fixed contact and the movable contact are opened and closed in accordance with excitation and non-excitation of the coil 31. In the present embodiment, when the coil 31 is not excited, the movable contact and the fixed contact are separated, and therefore the contact portion 32 is opened. The contact portion 32 is configured to: when the coil 31 is excited, the movable contact comes into contact with the fixed contact, thereby switching to on.
That is, the mechanical relay 3 mechanically switches on/off of the contact portion 32 in response to a control signal input to the pair of input terminals 301 and 302, thereby switching conduction and non-conduction between the pair of output terminals 111 and 112. In other words, the mechanical relay 3 opens and closes the power supply circuit from the power supply a1 to the load B1 by turning on and off the contact portion 32 in response to the control signal.
< action >
The operation of the switchgear 1 according to the present embodiment will be described below with reference to fig. 3. Here, the "contact voltage" shown in fig. 3 is a voltage applied between the pair of output terminals 111 and 112. The "1 st current" shown in fig. 3 is a current flowing through the pair of output terminals 211, 212 of the semiconductor relay 2. And "2 nd current" shown in fig. 3 is a current flowing through the pair of output terminals 311, 312 of the mechanical relay 3.
First, at time t10, when an on signal out of the control signals is input to the pair of input terminals 101 and 102, the contact portion 32 of the mechanical relay 3 is turned on at time t11 (> t10) after a predetermined time from time t 10. For this reason, the pair of output terminals 311 and 312 are conducted, and the 2 nd current flows. Then, since the pair of output terminals 111 and 112 are also electrically connected to each other, the power supply circuit from the power supply a1 to the load B1 is closed, and a current flows to the load B1. In the present embodiment, since the load B1 is an inductive load, the 2 nd current gradually increases from time t11 to time t12 (> t 11). In addition, when the load B1 is a resistive load, the 2 nd current steeply rises at time t 11.
At time t12, since the on signal is delayed by control circuit 4, the on signal is not yet input to semiconductor relay 2, and semiconductor switch 2B of semiconductor relay 2 is not turned on. When the elapsed time from time t12 reaches time t13 (> t12), the on signal is input to the semiconductor relay 2 via the control circuit 4, and the semiconductor switch 2B of the semiconductor relay 2 is turned on. At this time, since the contact resistance of the contact portion 32 is smaller than the on resistance of the semiconductor switch 2B, almost all of the current flowing from the power supply a1 to the load B1 flows through the contact portion 32. Therefore, in the switching device 1 of the present embodiment, compared to the case where the power supply circuit is closed only by the semiconductor relay 2 without using the mechanical relay 3, the power loss and heat generation in the on resistance of the semiconductor switch 2B are reduced, and the current can be increased. The "flowing current" is a current flowing between the pair of output terminals 111 and 112 when the power supply circuit from the power supply a1 to the load B1 is closed.
Next, when the off signal among the control signals is input to the pair of input terminals 101 and 102 at time t14 (> t13), the contact portion 32 of the mechanical relay 3 is opened at time t15 (> t14) after a predetermined time from time t 14. Then, since the pair of output terminals 311 and 312 are non-conductive, the No. 2 current flows and the No. 1 current flows. At this point in time, the off signal is delayed by the control circuit 4, and therefore the semiconductor switch 2B of the semiconductor relay 2 is not turned off since the off signal has not been input to the semiconductor relay 2.
When the elapsed time from time t15 reaches time t16 (> t15), the semiconductor switch 2B of the semiconductor relay 2 is turned off by the input of the off signal to the semiconductor relay 2 via the control circuit 4. Then, since the pair of output terminals 111 and 112 are non-conductive, the power supply circuit from the power supply a1 to the load B1 is opened, and the current does not flow to the load B1. In the present embodiment, since the load B1 is an inductive load, although a counter electromotive force is instantaneously generated, the varistor VR1 functions from time t16 to time t17 (> t16), and thus the contact voltage does not become an excessive voltage.
Here, when the contact portion 32 of the mechanical relay 3 is opened, the semiconductor switch 2B is not opened, and therefore, the power supply voltage is not applied between the pair of output terminals 111 and 112. Therefore, in the switching device 1 of the present embodiment, it is difficult to generate an arc when the contact portion 32 is opened, as compared with a case where the semiconductor switch 2B of the semiconductor relay 2 is opened earlier than the contact portion 32 of the mechanical relay 3.
As described above, in the switching device 1 of the present embodiment, when an off signal among the control signals is input to the pair of input terminals 101 and 102, it is desirable to control the contact portion 32 to be turned off earlier than the semiconductor switch 2B. This control will be referred to as "priority off control" hereinafter. Here, normally, since the turn-off time of the semiconductor switch 2B is shorter than the return time of the contact portion 32, the semiconductor switch 2B is turned off earlier than the contact portion 32.
To this end, in the present embodiment, the control circuit 4 is configured to: by controlling the semiconductor switch 2B, the timing at which the semiconductor switch 2B is turned from on to off is delayed from the timing at which the contact portion 32 of the mechanical relay 3 is turned from on to off. Therefore, in the switching device 1 of the present embodiment, the priority off control can be realized by 1 control signal without individually controlling the semiconductor relay 2 and the mechanical relay 3.
In the present embodiment, the control circuit 4 is configured to: by controlling the semiconductor switch 2B, the timing at which the semiconductor switch 2B is turned from off to on is delayed from the timing at which the contact portion 32 of the mechanical relay 3 is turned from off to on. Therefore, in the switching device 1 of the present embodiment, it is possible to prevent an excessive current from instantaneously flowing through the semiconductor switch 2B when the pair of output terminals 111 and 112 are turned on. Whether or not this structure is adopted is arbitrary.
< effects >
As described above, since the switching device 1 of the present embodiment includes the control circuit 4, it is not necessary to individually control the semiconductor relay 2 and the mechanical relay 3 and to perform complicated control such that the respective off timings are shifted. That is, the switching device 1 of the present embodiment can easily control the hybrid relay combining the semiconductor relay 2 and the mechanical relay 3 with 1 control signal.
The switch device 1 of the present embodiment is configured such that the semiconductor switch 2B (contact portion 32) is turned on when the control signal is at the high level, but may have another configuration. That is, the switching device 1 of the present embodiment may be configured such that: when the control signal is at a low level, the semiconductor switch 2B (contact portion 32) is turned on. In this case, the "on signal among the input control signals" means that the "control signal is at a low level". Further, the "no more off signal among the control signals is inputted" means that the "control signal is at a high level".
(modification of embodiment 1)
A switchgear 1A according to a modification of embodiment 1 of the present invention will be described below with reference to fig. 4. The switching device 1A of the present modification differs from the switching device 1 of embodiment 1 in that a control circuit 4A is provided instead of the control circuit 4. The configuration other than the control circuit 4A in the switching device 1A of the present modification is the same as that of the switching device 1 of embodiment 1, and therefore, the description thereof is omitted here.
< constitution >
As shown in fig. 4, the control circuit 4A includes a delay circuit 5A instead of the delay circuit 5. The delay circuit 5A includes a diode 43 and resistors 44 and 45 in addition to the resistor 41 and the capacitor 42 of the delay circuit 5. In the delay circuit 5A, the resistance value of the resistor 41 is smaller than the resistance value of the resistor 41 in the delay circuit 5 of embodiment 1. The anode of the diode 43 is electrically connected to the 1 st input terminal 101, and the cathode is electrically connected to the resistor 41. Resistor 44 is electrically connected in parallel with capacitor 42. The resistance value of the resistor 44 is larger than that of the resistor 41. Resistor 45 is electrically connected in series with capacitor 42. The resistance value of the resistor 45 is about the same as that of the resistor 41.
Here, when an on signal among the control signals is input between the pair of input terminals 101 and 102, the resistance value of the resistor 41 in the delay circuit 5A is smaller than the resistance value of the resistor 41 in the delay circuit 5 of embodiment 1, and therefore the time constant is smaller than that of the delay circuit 5. Therefore, the delay time of the on signal by the control circuit 4A is shorter than the delay time of the on signal by the control circuit 4 of embodiment 1.
When an off signal among the control signals is input between the pair of input terminals 101 and 102, the diode 43 prevents the electric charge stored in the capacitor 42 from being discharged to the mechanical relay 3 in the delay circuit 5A. Further, in the delay circuit 5A, the time for discharging the electric charge accumulated in the capacitor 42 is relatively long by the resistor 44 connected in parallel with the capacitor 42 and the resistor 45 connected in series with the capacitor 42. Therefore, the delay time of the off signal by the control circuit 4A becomes longer than the delay time of the on signal by the control circuit 4A.
In the switching device 1A of the present modification, the characteristic that the passage (turn on) time of the semiconductor switch 2B of the semiconductor relay 2 is shorter than the operation time of the contact portion 32 of the mechanical relay 3 is utilized. That is, the delay time of the on signal by the control circuit 4A is made shorter than the difference between the passage time of the semiconductor switch 2B and the operation time of the contact portion 32. Therefore, in the switching device 1A of the present modification, even if the on signal is delayed by the control circuit 4A, the timing at which the semiconductor switch 2B is turned on from off is earlier than the timing at which the contact portion 32 is turned on from off by the electric energy. In the switching device 1A of the present modification, the control circuit 4A causes the off signal to have a longer delay time than the on signal. Therefore, in the switching device 1A of the present modification, similarly to the control circuit 4 of embodiment 1, the timing at which the semiconductor switch 2B is turned from on to off can be delayed from the timing at which the contact portion 32 is turned from on to off.
< action >
The operation of the switching device 1A according to the present modification will be described below with reference to fig. 5. First, at time t20, when an on signal out of the control signals is input to the pair of input terminals 101 and 102, the semiconductor switch 2B of the semiconductor relay 2 is turned on at time t21 (> t20) after a predetermined time from time t 20. For this reason, the pair of output terminals 311 and 312 are conducted, and the 1 st current flows. Then, since the pair of output terminals 111 and 112 are also electrically connected to each other, the power supply circuit from the power supply a1 to the load B1 is closed, and a current flows to the load B1. In the present embodiment, since the load B1 is an inductive load, the 1 st current gradually increases from the time t21 to the time t22 (> t 21). In addition, when the load B1 is a resistive load, the 1 st current steeply rises at time t 21.
At this point in time, the contact portion 32 of the mechanical relay 3 is not turned on. Thereafter, at time t23 (> t22) after a predetermined time from time t22, the contact portion 32 of the mechanical relay 3 is turned on. Here, when the contact portion 32 of the mechanical relay 3 is turned on, the contact voltage is a voltage corresponding to a voltage drop in the on-resistance between the drain and the source of the semiconductor switch 2B, and therefore is smaller than the maximum voltage of the power supply voltage. Therefore, in the switching device 1A of the present modification, the inrush current generated when the contact portion 32 is turned on can be reduced as compared with the case where the power supply circuit is closed only by the mechanical relay 3 without using the semiconductor relay 2.
Next, at time t24 (> t23), when the off signal out of the control signals is input to the pair of input terminals 101 and 102, the contact portion 32 of the mechanical relay 3 is opened at time t25 (> t24) after a predetermined time from time t 24. Then, since the pair of output terminals 311 and 312 are non-conductive, the No. 2 current flows and the No. 1 current flows. At this point in time, since the off signal is delayed by the control circuit 4A, the off signal is not yet input to the semiconductor relay 2, and the semiconductor switch 2B of the semiconductor relay 2 is not turned off.
When the elapsed time from time t25 reaches time t26 (> t25), the semiconductor switch 2B of the semiconductor relay 2 is turned off by the input of the off signal to the semiconductor relay 2 via the control circuit 4A. Then, since the pair of output terminals 111 and 112 are non-conductive, the power supply circuit from the power supply a1 to the load B1 is opened, and the current does not flow to the load B1. From time t26 to time 27 (> t26), the varistor VR1 functions.
As described above, in the switching device 1A of the present modification, when an on signal out of the control signals is input to the pair of input terminals 101 and 102, it is desirable to control the semiconductor switch 2B of the semiconductor relay 2 to be turned on earlier than the contact portion 32 of the mechanical relay 3. This control is hereinafter referred to as "priority on control".
In the switching device 1A of the present modification, the preferential turn-on control is realized by using the control circuit 4A, utilizing the characteristic that the on-time of the semiconductor switch 2B is shorter than the operating time of the contact portion 32. That is, in the present modification, the control circuit 4A is configured to: by controlling the semiconductor switch 2B, the timing at which the semiconductor switch 2B is turned from off to on is made earlier than the timing at which the contact portion 32 of the mechanical relay 3 is turned from off to on. Therefore, in the switching device 1A of the present modification, the priority on control can be realized by 1 control signal without individually controlling the semiconductor relay 2 and the mechanical relay 3. In the switching device 1A of the present modification, priority off control is also realized by using the control circuit 4A, as in the control circuit 4 of embodiment 1.
< effects >
As described above, in the switching device 1A of the present modification, since the control circuit 4A is provided, it is not necessary to individually control the semiconductor relay 2 and the mechanical relay 3 and to perform complicated control such that the on/off timings of the relays are shifted from each other. That is, the switching device 1A of the present modification can easily control the hybrid relay in which the semiconductor relay 2 and the mechanical relay 3 are combined, with 1 control signal.
(embodiment mode 2)
As shown in fig. 6, a switching device 1B according to embodiment 2 of the present invention includes a semiconductor relay 2, a mechanical relay 3, and a control circuit 4B. The semiconductor relay 2 is electrically connected to a power supply circuit from the power supply a1 to the load B1, and opens and closes the power supply circuit in response to a1 st control signal input from the outside. The mechanical relay 3 is electrically connected in parallel to the semiconductor relay 2, and opens and closes the power supply circuit in response to a 2 nd control signal inputted from the outside.
The semiconductor relay 2 has semiconductor switches 23, 24. The semiconductor switches 23 and 24 are turned on/off in response to the 1 st control signal to open/close the power supply circuit. The semiconductor switches 23 and 24 are configured to be turned on/off in accordance with the charge accumulated in the capacitor element (gate capacitor).
The control circuit 4B has a charge/discharge path 25 and an impedance circuit 26. The charge/discharge path 25 charges and discharges the gate capacitance of the semiconductor switches 23 and 24. The impedance circuit 26 is electrically connected to the charge/discharge path 25. Further, the impedance circuit 26 is configured to: the impedance element 261 is provided to connect the 1 st path S1 to the charge/discharge path 25 when an on signal among the control signals (1 st control signal) is input. Further, the impedance circuit 26 is configured to: when the off signal among the control signals (1 st control signal) is input, the charge/discharge path 25 is connected to the 2 nd path S2 including the impedance element 261.
< constitution >
The switching device 1B of the present embodiment is explained in detail below. However, in the switch device 1B of the present embodiment, the portions common to the switch device 1 of embodiment 1 are not described. In the switching device 1B of the present embodiment, an ac power supply is used as the power supply a1, but a dc power supply may be used.
In the following description, the phrase "the on signal among the 1 st control signal (2 nd control signal) is input" means that "the 1 st control signal (2 nd control signal) is at a high level". Further, the "off signal among the 1 st control signal (2 nd control signal) is inputted" means that the 1 st control signal (2 nd control signal) is at a low level ".
In the present embodiment, the control signal is input as a1 st control signal to a pair of input terminals 201 and 202 of the semiconductor relay 2. In the present embodiment, the control signal is input as a 2 nd control signal to the pair of input terminals 301 and 302 of the mechanical relay 3. That is, in the switching device 1B of the present embodiment, the 1 st control signal and the 2 nd control signal are the same. In other words, the 1 st control signal and the 2 nd control signal have the same period and the same phase. Of course, the 1 st control signal and the 2 nd control signal may be different control signals from each other.
The semiconductor relay 2 is a so-called contactless relay, and includes a light emitting element 21, a light receiving element 22, and 2 semiconductor switches 23 and 24.
The light emitting element 21 is configured to convert an electric signal input to the pair of input terminals 201 and 202 into light. In the switching device 1 of the present embodiment, the light emitting element 21 is a light emitting diode. The anode of the led is electrically connected to the 1 st input 201, and the cathode is electrically connected to the 2 nd input 202. The light emitting element 21 receives the 1 st control signal input to the pair of input terminals 201, 202 and emits light. The number of light emitting diodes constituting the light emitting element 21 is not limited to 1, and may be plural.
Here, in the switching device 1B of the present embodiment, as described above, the 1 st control signal and the 2 nd control signal are the same. Therefore, in the switching device 1B of the present embodiment, the resistor 11 for current adjustment is electrically connected between the 1 st input terminal 101 and the 1 st input terminal 201 of the semiconductor relay 2. The resistor 11 prevents an excessive current from flowing through the light emitting element 21. In addition, when the 1 st control signal and the 2 nd control signal are individually input to the semiconductor relay 2 and the mechanical relay 3, the resistor 11 is not necessary.
The light receiving element 22 is configured to receive the light emitted from the light emitting element 21 and generate a photovoltaic force. In the switching device 1B of the present embodiment, the light receiving element 22 is constituted by a photodiode array in which a plurality of photodiodes are electrically connected in series. The photodiode array has an anode electrically connected to one high-potential side end of the charge/discharge path 25, and a cathode electrically connected to one low-potential side end of the charge/discharge path 25.
The semiconductor switches 23, 24 are both n-channel enhancement type MOSFETs. The gates of the semiconductor switches 23 and 24 are electrically connected to one end of the light receiving element 22 on the high potential side. The sources of the semiconductor switches 23 and 24 are electrically connected to one end of the light receiving element 22 on the low potential side via an impedance circuit 26. The drain of the semiconductor switch 23 is electrically connected to the 1 st output terminal 111. The drain of the semiconductor switch 24 is electrically connected to the 2 nd output terminal 112. That is, the semiconductor switches 23 and 24 are electrically connected in series to the pair of output terminals 111 and 112.
Each of the semiconductor switches 23 and 24 is configured to: the charge accumulated in the capacitor element (gate capacitor) is turned on/off. The "gate capacitance" refers to a capacitor existing between the gate and the source of the semiconductor switches 23 and 24 and a capacitor existing between the gate and the drain.
In the switching device 1B of the present embodiment, the number of semiconductor switches (23, 24) is 2, but may be 1. That is, when the power supply a1 is an ac power supply, the switching device 1 requires 2 semiconductor switches (23, 24). On the other hand, when the power supply a1 is a dc power supply, the switching device 1B requires 1 high-side semiconductor switch (either one of 23 and 24). In the switching device 1B of the present embodiment, the semiconductor switches (23, 24) are enhancement MOSFETs, and are semiconductor elements such as IGBTs, for example.
The control circuit 4B has a charge/discharge path 25 and an impedance circuit 26. The charge/discharge path 25 is configured to charge and discharge the gate capacitance of the semiconductor switches 23 and 24. In the switching device 1B of the present embodiment, the charge/discharge path 25 includes the resistor 251 electrically connected in parallel to the light-receiving element 22.
The function of the charge/discharge path 25 will be briefly described below. When a photovoltaic force is generated in the light receiving element 22, a current flows from the light receiving element 22 to the gates of the semiconductor switches 23 and 24, and the gate capacitances of the semiconductor switches 23 and 24 are charged. When the photovoltaic power is no longer generated in the light receiving element 22, the gate capacitances of the semiconductor switches 23 and 24 are discharged through the resistor 251 of the charge/discharge path 25.
In the switching device 1B of the present embodiment, the charge/discharge path 25 includes the resistor 251, but may have another configuration. For example, the charge/discharge path 25 may include a semiconductor element 252 and a resistor 253 as shown in fig. 7. The semiconductor element 252 is an n-channel depletion MOSFET. The drain of the semiconductor element 252 is electrically connected to one end of the light-receiving element 22 on the high potential side. The gate of the semiconductor element 252 is electrically connected to one end of the light-receiving element 22 on the low potential side. The source of the semiconductor element 252 is electrically connected to one end of the light receiving element 22 on the low potential side via a resistor 253. In other words, the resistor 253 is electrically connected to the gate-source of the semiconductor element 252.
The function of the charge/discharge path 25 will be briefly described. When a photovoltaic force is generated in the light-receiving element 22, a current flows from the light-receiving element 22 to the semiconductor element 252 and the resistor 253. A voltage drop occurs in the resistor 253, and the semiconductor element 252 is turned off by the voltage drop. Accordingly, a current flows from the light receiving element 22 to the gates of the semiconductor switches 23 and 24, and the gate capacitances of the semiconductor switches 23 and 24 are charged. When the photovoltaic power is no longer generated in the light receiving element 22, the voltage drop in the resistor 253 is no longer generated, and the semiconductor element 252 is turned on. For this purpose, the gate capacitances of the semiconductor switches 23, 24 are discharged via the semiconductor element 252.
The impedance circuit 26 has an impedance element 261 and a switch 262. The impedance element 261 is electrically connected between one end of the light receiving element 22 on the low potential side and the sources of the semiconductor switches 23 and 24. The switch 262 is electrically connected in parallel with the impedance element 261. The impedance circuit 26 is configured to: when the on signal of the 1 st control signal is input to the pair of input terminals 201 and 202, the path through which the current flows is switched to the 1 st path S1 via the switch 262. Further, the impedance circuit 26 is configured to: when the 1 st control signal is input to the pair of input terminals 201 and 202, the path through which the current flows is switched to the 2 nd path S2 via the impedance element 261. In other words, the impedance circuit 26 is configured to: when an on signal among the 1 st control signals is input, the 1 st path S1 is connected to the charge/discharge path 25 for charging and discharging the gate capacitances of the semiconductor switches 23 and 24. Further, the impedance circuit 26 is configured to: when the off signal among the 1 st control signals is input, the charge/discharge path 25 is connected to the 2 nd path S2 including the impedance element 261.
Fig. 8 shows an example of a specific circuit configuration of the impedance circuit 26. The impedance circuit 26 includes a resistor R1 (impedance element 261) and a diode D1 (switch 262). The resistor R1 is electrically connected between one low potential side end of the light receiving element 22 and the sources of the semiconductor switches 23 and 24. Diode D1 is electrically connected in parallel with resistor R1. The diode D1 has an anode electrically connected to the sources of the semiconductor switches 23 and 24, and a cathode electrically connected to one end of the light-receiving element 22 on the low potential side.
In this configuration, when an on signal of the 1 st control signal is input to the pair of input terminals 201 and 202, a current flows to charge the gate capacitances of the semiconductor switches 23 and 24, and thus a current flows through a path (i.e., the 1 st path S1) via the diode D1. When the off signal among the 1 st control signals is input to the pair of input terminals 201 and 202, a current flows, the gate capacitances of the semiconductor switches 23 and 24 are discharged, and a current flows through a path (i.e., the 2 nd path S2) via the resistor R1.
The operation of the semiconductor relay 2 will be described below. When an on signal of the 1 st control signal is input to the pair of input terminals 201 and 202, the light emitting element 21 emits light. Then, the light emitted from the light emitting element 21 is received, and the light receiving element 22 generates a photovoltaic force. Then, a current flows from the light receiving element 22 to the gates of the semiconductor switches 23 and 24 through the 1 st path S1 of the impedance circuit 26, and the gate capacitances of the semiconductor switches 23 and 24 are charged, thereby turning on the semiconductor switches 23 and 24. Thereby, the pair of output terminals 111 and 112 are electrically connected to each other.
When the off signal of the 1 st control signal is input to the pair of input terminals 201 and 202, the light emitting element 21 does not emit light any more. For this reason, the light receiving element 22 no longer generates a photovoltaic force. Then, the gate capacitances of the semiconductor switches 23 and 24 are discharged through the resistor 251 of the charge/discharge path 25 and the 2 nd path S2 of the impedance circuit 26, and the semiconductor switches 23 and 24 are turned off. Thereby, the pair of output terminals 111 and 112 are non-conductive.
That is, the semiconductor relay 2 switches the semiconductor switches 23 and 24 on/off in response to the 1 st control signal input to the pair of input terminals 201 and 202, thereby switching conduction and non-conduction between the pair of output terminals 111 and 112. In other words, the semiconductor relay 2 opens and closes the power supply circuit from the power supply a1 to the load B1 by turning on/off the semiconductor switches 23 and 24 in response to the 1 st control signal.
In the switching device 1B of the present embodiment, the semiconductor relay 2 electrically insulates the pair of input terminals 201 and 202 from the pair of output terminals 211 and 212 by using the light emitting element 21 and the light receiving element 22. That is, the semiconductor relay 2 includes the insulating portions 21 and 22 that electrically insulate the primary side (the pair of input terminals 101 and 102 side) from the secondary side (the pair of output terminals 111 and 112 side). The insulating portions 21 and 22 may have other configurations. For example, the semiconductor relay 2 may be configured as follows: the pair of input terminals 201 and 202 and the pair of output terminals 211 and 212 are electrically insulated from each other by using a capacitor instead of the light-emitting element 21 and the light-receiving element 22. In addition, when a capacitor is used, the semiconductor relay 2 needs to further include a drive circuit for driving the semiconductor switches 23 and 24.
< action >
The operation of the switching device 1B according to the present embodiment will be described below with reference to fig. 9. Fig. 10 shows the operation of the switching device 1B of the present embodiment when the power supply a1 is a dc power supply, but since the operation is the same as when the power supply a1 is an ac power supply, the description thereof is omitted here. Here, "power supply voltage" shown in fig. 9 and 10 is the output voltage of the power supply a 1. The "control signal" shown in fig. 9 and 10 is a general term for the 1 st control signal and the 2 nd control signal.
First, when an on signal among the control signals is input to the pair of input terminals 101 and 102 at time t0, the semiconductor switches 23 and 24 of the semiconductor relay 2 are turned on. For this reason, the pair of output terminals 211 and 212 are conducted to flow the 1 st current. Then, since the pair of output terminals 111 and 112 are also electrically connected to each other, the power supply circuit from the power supply a1 to the load B1 is closed, and a current flows to the load B1. At this point in time, the contact portion 32 of the mechanical relay 3 is not turned on. Thereafter, at time t1 (> t0) after a predetermined time from time t0, the contact portion 32 of the mechanical relay 3 is turned on.
Here, when the contact portion 32 of the mechanical relay 3 is turned on, the contact voltage is a voltage corresponding to a voltage drop in the on-resistance between the drain and the source of the semiconductor switches 23 and 24, and therefore is smaller than the maximum voltage of the power supply voltage. Therefore, in the switching device 1B of the present embodiment, the inrush current generated when the contact portion 32 is turned on can be reduced as compared with the case where the power supply circuit is closed only by the mechanical relay 3 without using the semiconductor relay 2. Since the contact resistance of the contact portion 32 is relatively small compared to the on-resistance of the semiconductor switches 23 and 24, almost all of the current flowing from the power supply a1 to the load B1 flows through the contact portion 32. Therefore, in the switching device 1B of the present embodiment, compared to the case where the power supply circuit is closed only by the semiconductor relay 2 without using the mechanical relay 3, the power loss and heat generation in the on-resistances of the semiconductor switches 23 and 24 are reduced, and the current can be increased.
Next, when the off signal of the control signals is input to the pair of input terminals 101 and 102 at time t2 (> t1), the contact portion 32 of the mechanical relay 3 is opened at time t3 (> t2) after a predetermined time from time t 2. Then, since the pair of output terminals 311 and 312 are non-conductive, the No. 2 current flows and the No. 1 current flows. At this point in time, the semiconductor switches 23, 24 of the semiconductor relay 2 are not opened. After that, at a time t4 (> t3) after a further predetermined time from the time t3, the semiconductor switches 23 and 24 of the semiconductor relay 2 are turned off. Then, since the pair of output terminals 111 and 112 are non-conductive, the power supply circuit from the power supply a1 to the load B1 is opened, and the current does not flow to the load B1.
Here, since the semiconductor switches 23 and 24 are not turned off when the contact portion 32 of the mechanical relay 3 is turned off, the power supply voltage is not applied between the pair of output terminals 111 and 112. Therefore, in the switching device 1B of the present embodiment, compared with the case where the semiconductor switches 23 and 24 of the semiconductor relay 2 are opened earlier than the contact portion 32 of the mechanical relay 3, it is difficult to generate an arc when the contact portion 32 is opened. This is particularly effective in the case where the power supply a1 is a dc power supply.
As described above, the switching device 1B of the present embodiment is desirably controlled such that: when an on signal among the control signals is input to the pair of input terminals 101 and 102, the semiconductor switches 23 and 24 of the semiconductor relay 2 are turned on earlier than the contact portion 32 of the mechanical relay 3. That is, the switching device 1B of the present embodiment is desired to be able to execute priority on control. Therefore, in the switching device 1B of the present embodiment, the characteristic that the passage time of the semiconductor switches 23 and 24 of the semiconductor relay 2 is shorter than the operation time of the contact portion 32 of the mechanical relay 3 is utilized. Therefore, in the switching device 1B of the present embodiment, the priority on control can be realized by 1 control signal without individually controlling the semiconductor relay 2 and the mechanical relay 3.
In addition, in the switch device 1B of the present embodiment, as described above, it is desirable to control: when an off signal among the control signals is input to the pair of input terminals 101 and 102, the contact portion 32 is opened earlier than the semiconductor switches 23 and 24. That is, the switching device 1B of the present embodiment is desired to be able to execute the priority off control. Here, normally, since the turn-off time of the semiconductor switches 23 and 24 is shorter than the return time of the contact portion 32, the semiconductor switches 23 and 24 are turned off earlier than the contact portion 32.
Therefore, in the switching device 1B of the present embodiment, when an off signal among the control signals (1 st control signal) is input, the gate capacitances of the semiconductor switches 23 and 24 are discharged via the 2 nd path S2 of the impedance circuit 26. That is, the gate capacitances of the semiconductor switches 23 and 24 are discharged through the impedance element 261, whereby the time constant is increased, and the on time of the semiconductor switches 23 and 24 is made longer than the reset time of the contact portion 32. Therefore, in the switching device 1B of the present embodiment, priority off control can be realized by 1 control signal without individually controlling the semiconductor relay 2 and the mechanical relay 3.
However, if the gate capacitances of the semiconductor switches 23 and 24 are charged via the impedance element 261, the on-time of the semiconductor switches 23 and 24 may be longer than the operation time of the contact portion 32. Therefore, in the switching device 1B of the present embodiment, when an on signal among the control signals (1 st control signal) is input, the gate capacitances of the semiconductor switches 23 and 24 are charged via the 1 st path S1 of the impedance circuit 26. That is, when the on signal among the control signals is input, the gate capacitances of the semiconductor switches 23 and 24 are charged without passing through the impedance element 261, and therefore, the on times of the semiconductor switches 23 and 24 can be prevented from becoming long.
That is, in the present embodiment, the control circuit 4B is configured to: by controlling the semiconductor switches 23 and 24, the timing at which the semiconductor switches 23 and 24 are turned from on to off is delayed from the timing at which the contact portion 32 of the mechanical relay 3 is turned from on to off. In the present embodiment, the control circuit 4B is configured to: by controlling the semiconductor switches 23 and 24, the timing at which the semiconductor switches 23 and 24 are turned on from off becomes earlier than the timing at which the contact portion 32 of the mechanical relay 3 is turned on from off.
Of course, the switch device 1B of the present embodiment may be configured such that: when an on signal among the control signals (1 st control signal) is input, the gate capacitances of the semiconductor switches 23, 24 are charged via the 2 nd path S2 of the impedance circuit 26. In this configuration, the control circuit 4B is configured as follows: by controlling the semiconductor switches 23 and 24, the timing at which the semiconductor switches 23 and 24 are turned from off to on is delayed from the timing at which the contact portion 32 of the mechanical relay 3 is turned from off to on.
< effects >
As described above, the switching device 1B of the present embodiment includes the control circuit 4B having the charge/discharge path 25 and the impedance circuit 26. In the switching device 1B of the present embodiment, the control circuit 4B is provided, so that the semiconductor relay 2 and the mechanical relay 3 are not individually controlled, and the priority on control and the priority off control can be realized by 1 control signal. In the switching device 1B of the present embodiment, the semiconductor relays 2 may be individually controlled by the 1 st control signal, and the mechanical relays 3 may be individually controlled by the 2 nd control signal. That is, the switch device 1B of the present embodiment has an improved degree of freedom of control.
In particular, in the switching device 1B of the present embodiment, the semiconductor relay 2 and the mechanical relay 3 are controlled by 1 control signal. In other words, in the switching device 1B of the present embodiment, the 1 st control signal and the 2 nd control signal are the same. In this configuration, there is no need for complicated control in which the timings of controlling the semiconductor relay 2 and the mechanical relay 3 are shifted from each other, and there is an advantage in that control becomes easy. That is, in this configuration, the hybrid relay combining the semiconductor relay 2 and the mechanical relay 3 can be easily controlled by 1 control signal. Whether or not this structure is adopted is arbitrary.
In the switching device 1B of the present embodiment, the semiconductor relay 2 includes the light emitting element 21 and the light receiving element 22. The semiconductor switches 23 and 24 are turned on/off by a photovoltaic potential generated by the light receiving element 22. Therefore, the switching device 1B of the present embodiment has an advantage that the potential difference between the input and output hardly affects the on/off of the semiconductor switches 23 and 24. Whether or not this structure is adopted in the semiconductor relay 2 is arbitrary.
However, the impedance circuit 26 is not limited to the configuration shown in fig. 8, and may have another configuration. For example, as shown in fig. 11, the impedance circuit 26 may be configured by a resistor R1 (impedance element 261) and a switching element Q1 (switch 262).
The resistor R1 is electrically connected between one end of the light receiving element 22 on the low potential side and the sources of the semiconductor switches 23 and 24, similarly to the configuration shown in fig. 8. The switching element Q1 is an n-channel enhancement MOSFET. The gate of the switching element Q1 is electrically connected to one end of the light-receiving element 22 on the high potential side. The drain of the switching element Q1 is electrically connected to the sources of the semiconductor switches 23 and 24. The source of the switching element Q1 is electrically connected to one end of the light-receiving element 22 on the low potential side.
In this configuration, when the on signal of the 1 st control signal is input to the pair of input terminals 201 and 202, the switching element Q1 is turned on, and thus a current flows through a path (i.e., the 1 st path S1) via the switching element Q1. When the off signal of the 1 st control signal is input to the pair of input terminals 201 and 202, the switching element Q1 is turned off, and therefore a current flows through a path (i.e., the 2 nd path S2) via the resistor R1.
As shown in fig. 12, the impedance circuit 26 may be configured by a resistor R1 (impedance element 261), a capacitor C1 (impedance element 261), and a diode D1 (switch 262), for example. The resistor R1 and the diode D1 have the same configuration as shown in fig. 8. The capacitor C1 is electrically connected in parallel with the resistor R1.
That is, the impedance element 261 may include a capacitive element (here, a capacitor C1). In this configuration, the off time of the semiconductor switches 23 and 24 can be made longer more effectively than in the case where the impedance element 261 is formed of only a resistor. In the configuration shown in fig. 12, the impedance element 261 is configured by the resistor R1 and the capacitor C1, but may be configured by only the capacitor C1.
The switch device 1B of the present embodiment is configured such that the semiconductor switches 23 and 24 (the contact portion 32) are turned on when the 1 st control signal (the 2 nd control signal) is at a high level, but may have another configuration. That is, the switch device 1B of the present embodiment may be configured such that: when the 1 st control signal (2 nd control signal) is at a low level, the semiconductor switches 23 and 24 (the contact portion 32) are turned on. In this case, the "on signal among the 1 st control signal (2 nd control signal) is input" means that the "1 st control signal (2 nd control signal) is at a low level". Further, the "off signal among the 1 st control signal (2 nd control signal) is inputted" means that the "1 st control signal (2 nd control signal) is at a high level".
However, the switching device 1B of the present embodiment may further include the control circuit 4 of embodiment 1 and the control circuit 4A of the modification of embodiment 1. In this case, too, the priority on control and the priority off control can be realized by 1 control signal without individually controlling the semiconductor relay 2 and the mechanical relay 3.
As is clear from the above-described embodiments, the switching device (1, 1A, 1B) according to claim 1 of the present invention includes a semiconductor relay (2), a mechanical relay (3), and a control circuit (4, 4A, 4B). A semiconductor relay (2) opens and closes a power supply circuit from a power supply (A1) to a load (B1). The mechanical relay (3) has a contact (32) electrically connected in parallel with the semiconductor relay (2), and opens and closes the power supply circuit by turning on/off the contact (32) in response to a control signal input from the outside. The control circuit (4, 4A, 4B) receives the control signal to control the semiconductor relay (2).
The semiconductor relay (2) has semiconductor switches (2B, 23, 24). The semiconductor switches (2B, 23, 24) are turned on/off according to the charge accumulated in the capacitor element to open/close the power supply circuit. The control circuits (4, 4A, 4B) are configured to: by controlling the semiconductor switches (2B, 23, 24), the timing at which the semiconductor switches (2B, 23, 24) are turned from on to off is delayed from the timing at which the contact portion (32) of the mechanical relay (3) is turned from on to off.
In addition, in the switching devices (1A, 1B) according to claim 2 of the present invention, in the 1 st aspect, the control circuits (4A, 4B) are configured to: the semiconductor switches (2B, 23, 24) are controlled so that the timing of turning the semiconductor switches (2B, 23, 24) from off to on is earlier than the timing of turning the contact portions (32) of the mechanical relay (3) from off to on.
In addition, in a switching device (1) according to claim 3 of the present invention, in the 1 st aspect, the control circuit (4) is configured to: the timing at which the semiconductor switch (2B) is turned from off to on is delayed from the timing at which the contact portion (32) of the mechanical relay (3) is turned from off to on by controlling the semiconductor switch (2B).
In the switching devices (1, 1A, 1B) according to claim 4 of the present invention, in any of claims 1 to 3, the semiconductor relay (2) further includes insulating portions (2A, 2C, 21, 22) that electrically insulate the primary side from the secondary side.
In addition, in the switching devices (1, 1A) according to claim 5 of the present invention, in claim 4, the control circuits (4, 4A) include delay circuits (5, 5A) provided on the primary side, delay the control signal, and output the delayed control signal to the semiconductor relay (2).
In addition, in the switching devices (1, 1A) according to claim 6 of the present invention, in claim 5, the control circuits (4, 4A) further include a buffer circuit (6) to which the control signal is input via the delay circuits (5, 5A) and which is configured to output the control signal when the voltage of the control signal reaches the threshold voltage.
In addition, a switching device (1B) according to claim 7 of the present invention is configured such that, in any one of the 4 th to 6 th aspects, a charging/discharging path (25) for charging and discharging the capacitor element in accordance with the control signal is further provided. The control circuit (4B) has an impedance circuit (26) provided on the secondary side and electrically connected to the charge/discharge path (25). The impedance circuit (26) has an impedance element (261). And the impedance circuit (26) is configured to: when an ON signal among the control signals is input, the charge/discharge path (25) is connected to the 1 st path (S1), and when an OFF signal among the control signals is input, the charge/discharge path (25) is connected to the 2 nd path (S2) including the impedance element (261).
In addition, in a switching device (1B) according to claim 8 of the present invention, in claim 7, the impedance element (261) includes a capacitance element (capacitor (C1)).
In addition, in a switchgear (1B) according to claim 9 of the present invention, in claim 7 or 8, the insulating units (21, 22) include: a light emitting element (21) that emits light upon receiving a control signal; and a light receiving element (22) that generates a photo-electromotive force in response to the light emitted from the light emitting element (21).
The switching devices (1, 1A, 1B) are provided with control circuits (4, 4A, 4B), and thus, even if control signals are not individually given to the semiconductor relay (2) and the mechanical relay (3), the time difference between the opening and closing of the semiconductor relay (2) and the mechanical relay (3) can be set. Therefore, the present invention can easily control a hybrid relay combining a semiconductor relay (2) and a mechanical relay (3) with 1 control signal.

Claims (6)

1. A switch device is provided with:
an input terminal to which a control signal is input from the outside;
a semiconductor relay that opens and closes a power supply circuit from a power supply to a load;
a mechanical relay having a contact portion electrically connected in parallel to the semiconductor relay, the mechanical relay opening and closing the power supply circuit by turning on/off the contact portion in response to the control signal; and
a control circuit receiving the control signal to control the semiconductor relay,
the semiconductor relay includes:
a light emitting element that receives the control signal and emits light;
a light receiving element that generates a photo-electromotive force in response to light emitted from the light emitting element; and
a semiconductor switch that turns on/off the power supply circuit in accordance with charge accumulated in a capacitor electrically connected to one end of the light emitting element,
the light emitting element is electrically isolated from the semiconductor switch,
the mechanical relay and the control circuit are electrically connected to the input,
the control circuit has:
a delay circuit to which the control signal is input and which outputs a delayed control signal; and
a buffer circuit electrically connected between an output terminal of the delay circuit on a high voltage side and the light emitting element,
the buffer circuit is used for buffering the data to be transmitted,
a control signal for causing the light emitting element to emit light is not output to the light emitting element until a voltage of the delayed control signal reaches a threshold voltage,
outputting a control signal for causing the light emitting element to emit light to the light emitting element if the voltage of the delayed control signal reaches the threshold voltage,
the control circuit is configured to: the semiconductor switch is controlled so that the timing at which the semiconductor switch is turned from on to off is delayed from the timing at which the contact portion of the mechanical relay is turned from on to off.
2. A switch device is provided with:
a semiconductor relay that opens and closes a power supply circuit from a power supply to a load;
a mechanical relay having a contact portion electrically connected in parallel to the semiconductor relay, the mechanical relay opening and closing the power supply circuit by turning on/off the contact portion in response to a control signal input from the outside; and
a control circuit receiving the control signal to control the semiconductor relay,
the semiconductor relay includes:
an insulating section that electrically insulates a primary side and a secondary side to which the control signal is input;
a semiconductor switch provided on the secondary side and turned on/off in accordance with the charge accumulated in the gate capacitor to open/close the power supply circuit; and
a charge/discharge path provided on the secondary side for charging and discharging the gate capacitor in response to the control signal,
the control circuit has an impedance circuit provided on the secondary side and electrically connected to the charge/discharge path,
the impedance circuit is configured to: having an impedance element for connecting the charge/discharge path to a1 st path when an ON signal among the control signals is inputted, and for connecting the charge/discharge path to a 2 nd path including the impedance element when an OFF signal among the control signals is inputted,
the control circuit is configured to: the semiconductor switch is controlled so that the timing at which the semiconductor switch is turned from on to off is delayed from the timing at which the contact portion of the mechanical relay is turned from on to off.
3. The switching device according to claim 1 or 2,
the control circuit is configured to: the semiconductor switch is controlled to be turned on from off earlier than the contact portion of the mechanical relay.
4. The switching device according to claim 1 or 2,
the control circuit is configured to: the semiconductor switch is controlled so that the timing at which the semiconductor switch is turned from off to on is delayed from the timing at which the contact portion of the mechanical relay is turned from off to on.
5. The switching device according to claim 2,
the impedance element includes a capacitive element.
6. The switching device according to claim 2 or 5,
the insulating section includes:
a light emitting element that receives the control signal and emits light; and
and a light receiving element that generates a photo-electromotive force in response to the light emitted from the light emitting element.
CN201680033447.6A 2015-06-10 2016-06-10 Switching device Active CN107710617B (en)

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JP2015117671 2015-06-10
PCT/JP2016/002808 WO2016199428A1 (en) 2015-06-10 2016-06-10 Switch device

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