CN107710163B - 一次写入型存储器码的纠错码管理的电路、系统和方法 - Google Patents

一次写入型存储器码的纠错码管理的电路、系统和方法 Download PDF

Info

Publication number
CN107710163B
CN107710163B CN201680035012.5A CN201680035012A CN107710163B CN 107710163 B CN107710163 B CN 107710163B CN 201680035012 A CN201680035012 A CN 201680035012A CN 107710163 B CN107710163 B CN 107710163B
Authority
CN
China
Prior art keywords
wom
symbol
bits
ecc
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680035012.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN107710163A (zh
Inventor
S·张
Y·朱
C·彼特斯通
S·拉马斯瓦米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to CN202110583253.6A priority Critical patent/CN113223601B/zh
Publication of CN107710163A publication Critical patent/CN107710163A/zh
Application granted granted Critical
Publication of CN107710163B publication Critical patent/CN107710163B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1004—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's to protect a block of data words, e.g. CRC or checksum
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/1016—Error in accessing a memory location, i.e. addressing error
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H03M13/13—Linear codes

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Human Computer Interaction (AREA)
  • Computer Security & Cryptography (AREA)
  • Probability & Statistics with Applications (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Error Detection And Correction (AREA)
  • Detection And Correction Of Errors (AREA)
  • Read Only Memory (AREA)
CN201680035012.5A 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法 Active CN107710163B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110583253.6A CN113223601B (zh) 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/703,714 US9772899B2 (en) 2015-05-04 2015-05-04 Error correction code management of write-once memory codes
US14/703,714 2015-05-04
PCT/US2016/030822 WO2016179309A1 (en) 2015-05-04 2016-05-04 Error correction code management of write-once memory codes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110583253.6A Division CN113223601B (zh) 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法

Publications (2)

Publication Number Publication Date
CN107710163A CN107710163A (zh) 2018-02-16
CN107710163B true CN107710163B (zh) 2021-06-18

Family

ID=57217974

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680035012.5A Active CN107710163B (zh) 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法
CN202110583253.6A Active CN113223601B (zh) 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110583253.6A Active CN113223601B (zh) 2015-05-04 2016-05-04 一次写入型存储器码的纠错码管理的电路、系统和方法

Country Status (4)

Country Link
US (2) US9772899B2 (https=)
JP (1) JP6975047B2 (https=)
CN (2) CN107710163B (https=)
WO (1) WO2016179309A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes
DE102015113414B4 (de) * 2015-08-14 2023-02-23 Infineon Technologies Ag Fehlerkorrektur unter Verwendung von WOM-Codes
KR102645140B1 (ko) * 2018-12-06 2024-03-07 삼성전자주식회사 Fpga를 포함하는 메모리 시스템 및 이의 동작 방법
US11164652B2 (en) * 2019-06-21 2021-11-02 Micron Technology, Inc. Two-layer code with low parity cost for memory sub-systems
EP4060670B1 (en) * 2021-03-18 2025-07-30 Murata Manufacturing Co., Ltd. Multiple time programmable memory using one time programmable memory and error correction codes
TWI838137B (zh) * 2023-02-23 2024-04-01 大陸商集創北方（珠海）科技有限公司 具寫入保護功能的燒寫控制電路、電子晶片以及資訊處理裝置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1141092A (zh) * 1994-01-11 1997-01-22 先进Risc机器有限公司 数据存储器和处理器总线
CN1188964A (zh) * 1997-01-15 1998-07-29 三星电子株式会社 具有纠错存储器的系统解码器及对其控制的方法
CN1491486A (zh) * 2001-02-16 2004-04-21 汤姆森许可贸易公司 用于解码纠错码的方法和设备
CN1538298A (zh) * 2003-04-17 2004-10-20 国际商业机器公司 计算机系统中的纠错方法和装置
CN1983424A (zh) * 2005-12-12 2007-06-20 联发科技股份有限公司 错误校正装置及校正方法
CN101253485A (zh) * 2005-08-30 2008-08-27 罗伯特·博世有限公司 存储装置及其运行方法
CN102103558A (zh) * 2009-12-18 2011-06-22 上海华虹集成电路有限责任公司 一种带有写重传功能的多通道NANDflash控制器
CN102339648A (zh) * 2010-07-23 2012-02-01 北京兆易创新科技有限公司 一种检错/纠错校验模块的检测方法及装置
CN103137215A (zh) * 2011-11-23 2013-06-05 马维尔国际贸易有限公司 向存储器提供低延时错误纠正码能力

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6751769B2 (en) * 2000-06-06 2004-06-15 International Business Machines Corporation (146,130) error correction code utilizing address information
EP1346364B8 (en) * 2000-12-20 2013-01-09 Callahan Cellular L.L.C. Data processing device with a write once memory (wom)
US6901549B2 (en) * 2001-12-14 2005-05-31 Matrix Semiconductor, Inc. Method for altering a word stored in a write-once memory device
US8245094B2 (en) * 2007-11-20 2012-08-14 California Institute of Technology Texas A & M Rank modulation for flash memories
US8341501B2 (en) * 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
WO2012020278A1 (en) * 2010-08-13 2012-02-16 Sandisk Il Ltd. Data coding using divisions of memory cell states
US8780620B2 (en) * 2010-09-20 2014-07-15 The Texas A&M University Information representation and coding for nonvolatile memories
US8645789B2 (en) * 2011-12-22 2014-02-04 Sandisk Technologies Inc. Multi-phase ECC encoding using algebraic codes
WO2013134735A1 (en) * 2012-03-08 2013-09-12 California Institute Of Technology Rank-modulation rewriting codes for flash memories
US9230652B2 (en) * 2012-03-08 2016-01-05 California Institute Of Technology Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
US8914570B2 (en) * 2012-05-04 2014-12-16 International Business Machines Corporation Selective write-once-memory encoding in a flash based disk cache memory
WO2014051611A1 (en) 2012-09-28 2014-04-03 Duke University Systems for and methods of extending lifetime of non-volatile memory
WO2014116301A1 (en) 2013-01-24 2014-07-31 California Institute Of Technology Joint rewriting and error correction in write-once memories
KR102068519B1 (ko) * 2013-07-01 2020-01-21 삼성전자주식회사 저장 장치, 그것의 쓰기 방법 및 읽기 방법
US10191803B2 (en) * 2015-01-30 2019-01-29 California Institute Of Technology Rewriting flash memories by message passing
US9772899B2 (en) * 2015-05-04 2017-09-26 Texas Instruments Incorporated Error correction code management of write-once memory codes

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1141092A (zh) * 1994-01-11 1997-01-22 先进Risc机器有限公司 数据存储器和处理器总线
CN1188964A (zh) * 1997-01-15 1998-07-29 三星电子株式会社 具有纠错存储器的系统解码器及对其控制的方法
CN1491486A (zh) * 2001-02-16 2004-04-21 汤姆森许可贸易公司 用于解码纠错码的方法和设备
CN1538298A (zh) * 2003-04-17 2004-10-20 国际商业机器公司 计算机系统中的纠错方法和装置
CN101253485A (zh) * 2005-08-30 2008-08-27 罗伯特·博世有限公司 存储装置及其运行方法
CN1983424A (zh) * 2005-12-12 2007-06-20 联发科技股份有限公司 错误校正装置及校正方法
CN102103558A (zh) * 2009-12-18 2011-06-22 上海华虹集成电路有限责任公司 一种带有写重传功能的多通道NANDflash控制器
CN102339648A (zh) * 2010-07-23 2012-02-01 北京兆易创新科技有限公司 一种检错/纠错校验模块的检测方法及装置
CN103137215A (zh) * 2011-11-23 2013-06-05 马维尔国际贸易有限公司 向存储器提供低延时错误纠正码能力

Also Published As

Publication number Publication date
CN113223601B (zh) 2026-03-17
JP6975047B2 (ja) 2021-12-01
US10191801B2 (en) 2019-01-29
CN113223601A (zh) 2021-08-06
CN107710163A (zh) 2018-02-16
US9772899B2 (en) 2017-09-26
JP2018520410A (ja) 2018-07-26
US20180011757A1 (en) 2018-01-11
US20160328289A1 (en) 2016-11-10
WO2016179309A1 (en) 2016-11-10

Similar Documents

Publication Publication Date Title
US9673840B2 (en) Turbo product codes for NAND flash
US8769374B2 (en) Multi-write endurance and error control coding of non-volatile memories
CN107710163B (zh) 一次写入型存储器码的纠错码管理的电路、系统和方法
CN105340022B (zh) 用于校正数据错误的电路、设备及方法
KR100845529B1 (ko) 플래시 메모리 장치의 이씨씨 제어기 및 그것을 포함한메모리 시스템
US8732553B2 (en) Memory system and control method thereof
CN106201763B (zh) 双模式纠错码/可写入一次存储器编解码器
US9471421B2 (en) Data accessing method, memory storage device and memory controlling circuit unit
TW201133500A (en) Semiconductor memory system having ECC circuit and method of controlling thereof
KR20220045343A (ko) 데이터 처리 시스템 내 데이터 전송에서 발생한 에러를 정정하는 장치 및 방법
US11003529B2 (en) Encoding method and memory storage apparatus using the same
US9507658B2 (en) Data reading method, memory storage device and memory controlling circuit unit
CN104733051B (zh) 奇偶校验码的解码方法、存储器储存装置及控制电路单元
US10514980B2 (en) Encoding method and memory storage apparatus using the same
US10649841B2 (en) Supporting multiple page lengths with unique error correction coding via galois field dimension folding
US9954556B2 (en) Scheme to avoid miscorrection for turbo product codes
US20190294497A1 (en) Method of implementing error correction code used by memory storage apparatus and memory storage apparatus using the same
CN104681095A (zh) 储存装置及其操作方法
KR102696725B1 (ko) Nand 플래시용 터보 프로덕트 코드
JP2007179480A (ja) メモリコントローラおよびフラッシュメモリシステム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant