CN103137215A - 向存储器提供低延时错误纠正码能力 - Google Patents
向存储器提供低延时错误纠正码能力 Download PDFInfo
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- CN103137215A CN103137215A CN201210498603XA CN201210498603A CN103137215A CN 103137215 A CN103137215 A CN 103137215A CN 201210498603X A CN201210498603X A CN 201210498603XA CN 201210498603 A CN201210498603 A CN 201210498603A CN 103137215 A CN103137215 A CN 103137215A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
Abstract
Description
Claims (23)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201161563368P | 2011-11-23 | 2011-11-23 | |
US61/563,368 | 2011-11-23 | ||
US201261623864P | 2012-04-13 | 2012-04-13 | |
US61/623,864 | 2012-04-13 |
Publications (2)
Publication Number | Publication Date |
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CN103137215A true CN103137215A (zh) | 2013-06-05 |
CN103137215B CN103137215B (zh) | 2017-06-23 |
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Application Number | Title | Priority Date | Filing Date |
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CN201210498603.XA Active CN103137215B (zh) | 2011-11-23 | 2012-11-23 | 向存储器提供低延时错误纠正码能力 |
Country Status (2)
Country | Link |
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US (1) | US8959417B2 (zh) |
CN (1) | CN103137215B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393596A (zh) * | 2016-04-26 | 2017-11-24 | 三星电子株式会社 | 半导体存储设备和操作其的方法 |
CN107710163A (zh) * | 2015-05-04 | 2018-02-16 | 德克萨斯仪器股份有限公司 | 一次写入型存储器码的纠错码管理 |
Families Citing this family (12)
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KR20130012737A (ko) * | 2011-07-26 | 2013-02-05 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이를 포함하는 반도체 시스템 |
US9189329B1 (en) | 2011-10-13 | 2015-11-17 | Marvell International Ltd. | Generating error correcting code (ECC) data using an ECC corresponding to an identified ECC protection level |
US9053050B2 (en) * | 2011-12-02 | 2015-06-09 | Synopsys, Inc. | Determining a desirable number of segments for a multi-segment single error correcting coding scheme |
US9064606B2 (en) * | 2012-12-20 | 2015-06-23 | Advanced Micro Devices, Inc. | Memory interface supporting both ECC and per-byte data masking |
WO2015016883A1 (en) | 2013-07-31 | 2015-02-05 | Hewlett-Packard Development Company, L.P. | Off-memory-module ecc-supplemental memory system |
US20150046764A1 (en) * | 2013-08-06 | 2015-02-12 | Kabushiki Kaisha Toshiba | Recording and reproducing apparatus |
WO2016030466A1 (de) * | 2014-08-29 | 2016-03-03 | Continental Teves Ag & Co. Ohg | Verfahren zur absicherung von nutzdaten eines speichers und elektronisches rechensystem |
US10061645B2 (en) * | 2015-06-30 | 2018-08-28 | Qualcomm Incorporated | Memory array and link error correction in a low power memory sub-system |
US10140175B2 (en) | 2015-11-20 | 2018-11-27 | Qualcomm Incorporated | Protecting an ECC location when transmitting correction data across a memory link |
US9983930B2 (en) * | 2016-07-28 | 2018-05-29 | Qualcomm Incorporated | Systems and methods for implementing error correcting code regions in a memory |
KR20190054533A (ko) | 2017-11-14 | 2019-05-22 | 삼성전자주식회사 | 반도체 메모리 장치, 이를 포함하는 메모리 시스템 및 반도체 메모리 장치의 동작 방법 |
KR102652001B1 (ko) | 2019-05-22 | 2024-03-27 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법 |
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US6167548A (en) * | 1997-09-30 | 2000-12-26 | Fujitsu Limited | Data error correcting method and apparatus |
CN101373449A (zh) * | 2007-08-21 | 2009-02-25 | 三星电子株式会社 | Ecc控制电路、多通道存储器系统以及相关操作方法 |
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US4858349A (en) * | 1988-06-02 | 1989-08-22 | Walsh Brendan R | Anchoring member for a fabric stretcher |
US6086353A (en) * | 1998-02-17 | 2000-07-11 | Cincinnati Milacron Inc. | Two-stage electric injection unit with rotating plunger |
US6279072B1 (en) | 1999-07-22 | 2001-08-21 | Micron Technology, Inc. | Reconfigurable memory with selectable error correction storage |
US6662333B1 (en) | 2000-02-04 | 2003-12-09 | Hewlett-Packard Development Company, L.P. | Shared error correction for memory design |
US6961890B2 (en) | 2001-08-16 | 2005-11-01 | Hewlett-Packard Development Company, L.P. | Dynamic variable-length error correction code |
US7117421B1 (en) | 2002-05-31 | 2006-10-03 | Nvidia Corporation | Transparent error correction code memory system and method |
DE602004014371D1 (de) | 2004-09-10 | 2008-07-24 | St Microelectronics Srl | Speicher mit eingebauter Fehlerkorrekturkode-Einrichtung |
TWI254848B (en) | 2004-11-16 | 2006-05-11 | Via Tech Inc | Method and related apparatus for performing error checking-correcting |
US7676730B2 (en) | 2005-09-30 | 2010-03-09 | Quantum Corporation | Method and apparatus for implementing error correction coding in a random access memory |
US7975205B2 (en) | 2007-01-26 | 2011-07-05 | Hewlett-Packard Development Company, L.P. | Error correction algorithm selection based upon memory organization |
US8051358B2 (en) | 2007-07-06 | 2011-11-01 | Micron Technology, Inc. | Error recovery storage along a nand-flash string |
US8429492B2 (en) | 2007-11-30 | 2013-04-23 | Marvell World Trade Ltd. | Error correcting code predication system and method |
US8185801B2 (en) | 2008-01-31 | 2012-05-22 | International Business Machines Corporation | System to improve error code decoding using historical information and associated methods |
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2012
- 2012-11-20 US US13/682,552 patent/US8959417B2/en active Active
- 2012-11-23 CN CN201210498603.XA patent/CN103137215B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6167548A (en) * | 1997-09-30 | 2000-12-26 | Fujitsu Limited | Data error correcting method and apparatus |
CN101373449A (zh) * | 2007-08-21 | 2009-02-25 | 三星电子株式会社 | Ecc控制电路、多通道存储器系统以及相关操作方法 |
TW200915336A (en) * | 2007-08-21 | 2009-04-01 | Samsung Electronics Co Ltd | ECC control circuits, multi-channel memory systems including the same, and related methods of operation |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107710163A (zh) * | 2015-05-04 | 2018-02-16 | 德克萨斯仪器股份有限公司 | 一次写入型存储器码的纠错码管理 |
CN107710163B (zh) * | 2015-05-04 | 2021-06-18 | 德克萨斯仪器股份有限公司 | 一次写入型存储器码的纠错码管理的电路、系统和方法 |
CN107393596A (zh) * | 2016-04-26 | 2017-11-24 | 三星电子株式会社 | 半导体存储设备和操作其的方法 |
CN107393596B (zh) * | 2016-04-26 | 2022-03-01 | 三星电子株式会社 | 半导体存储设备和操作其的方法 |
Also Published As
Publication number | Publication date |
---|---|
US8959417B2 (en) | 2015-02-17 |
US20130132799A1 (en) | 2013-05-23 |
CN103137215B (zh) | 2017-06-23 |
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Effective date of registration: 20200424 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200424 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Patentee before: Marvell International Ltd. Effective date of registration: 20200424 Address after: Hamilton, Bermuda Patentee after: Marvell International Ltd. Address before: Babado J San Mega Le Patentee before: MARVELL WORLD TRADE Ltd. |
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