CN107695796B - A kind of sapphire crystalline substance tile polishing method - Google Patents

A kind of sapphire crystalline substance tile polishing method Download PDF

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Publication number
CN107695796B
CN107695796B CN201610643820.1A CN201610643820A CN107695796B CN 107695796 B CN107695796 B CN 107695796B CN 201610643820 A CN201610643820 A CN 201610643820A CN 107695796 B CN107695796 B CN 107695796B
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polishing
crystalline substance
disk
brick
polishing step
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CN107695796A (en
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周群飞
饶桥兵
夏本权
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Lansi Technology (changsha) Co Ltd
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Lansi Technology (changsha) Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A kind of sapphire crystalline substance tile polishing method, first by the small pressure of the first polishing step, the mode of the slow-speed of revolution, big flow is polished, and effectively removes the sharp parts on brilliant brick surface, reduces the scuffing of brilliant brick chipping and polishing disk.Then by the second polishing step high pressure, middle revolving speed, the appropriate mode amount of the being removed polishing for lowering flow, it is not saturating to reduce polishing, keeps the sapphire crystalline substance brick surface through the first polishing step more smooth；Finally by third polishing step low-pressure, high revolving speed, it is ensured that brilliant brick polished surface finish.The present invention can make the surface of sapphire crystalline substance brick penetrating and reach mirror effect, provide platform for crystalline substance brick fault detection, workshop section's processing cost after saving；Effective cut-off defect stream leads to rear process, reduces board, manpower, auxiliary material waste.And in polishing process polishing disk without scratch, without chipping, flawless, polishing method of the invention is also applied for the polishing of the nonmetallic brick such as aluminium oxide, zirconia ceramics.

Description

A kind of sapphire crystalline substance tile polishing method
Technical field
The present invention relates to sapphire polishing technical fields, particularly, are related to a kind of sapphire crystalline substance tile polishing method.
Background technique
Sapphire group becomes aluminium oxide (Al2O3), it is by three oxygen atoms and two aluminium atoms with the combination of covalent bond pattern It forms, crystal structure is hexagonal lattice structure, and there are A-Plane, C-Plane, M-Plane and R- in the section that it is often applied Plane. since to penetrate band very wide for sapphire optics, all there is good light transmission from black light (190nm) to middle infrared ray Property, therefore by largely on optical element, infrared facility, high-intensitive radium-shine lens materials and photomask materials, it has loud The features such as speed, high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point high (2045 DEG C), it is a kind of quite unmanageable material Material.
The sapphire tool of Artificial Growth has good wearability, and hardness is only second to diamond and reaches 9 grades of Mohs, while blue precious Stone compactness makes it have biggish surface tension, and above-mentioned two characteristic is very suitable for the electronic touch such as mobile phone panel and clock Watch mirror face.But there are more bubble, impurity, the bad defect such as crystal boundary, processed indigo plants for the sapphire crystal ingot of Artificial Growth Jewel crystalline substance brick is in frosting through grinding machine molding rear surface, is directly with the naked eye difficult to see internal flaw clearly, defect part is generally wanted It is cut into chip to brilliant brick, then could be screened to after wafer polishing, since sapphire processing auxiliary material is expensive, defect part adds Work causes very big cost to waste.
In the prior art, less, 201310605267.9 disclosure of Chinese patent is related to the polishing scheme of sapphire crystalline substance brick The polishing both surfaces method of sapphire touch panel a kind of, the program mainly polish sapphire panel, polishing step Suddenly two steps are broadly divided into, first with big pressure, the mode of big revolving speed, big partial size, big flow is polished, then using low pressure The mode of power, the slow-speed of revolution, small particle, small flow is finely polished, in the program first step use big revolving speed, big partial size, greatly Flow is polished, and in big revolving speed and big partial size, the sharp parts of sapphire touch panel blank surface are easy to draw Hurt polishing disk, and sapphire touch panel is again than relatively thin (for thickness within 5mm, quality is within 50g), it is easy to chipping occur It is scrapped with crackle.And in two polishing steps of the program, the Abrasive Particle Size in polishing fluid is different, in polishing process, needs Stock removal polishing liquid is replaced, polishing process is discontinuous, and polishing efficiency is relatively difficult to guarantee.
Summary of the invention
It is an object of that present invention to provide a kind of optical grade sapphire crystalline substance brick polishing process, with solve to propose in background technique Problem.
To achieve the above object, the present invention provides a kind of sapphire crystalline substance tile polishing method, with jig by sapphire crystalline substance brick Clamping is fixed between the upper polishing disk of Twp-sided polishing machine and lower polishing disk, and upper polishing disk and lower polishing disk are all made of resin copper Disk, polishing fluid use diamond polishing fluid, and the above distribution of particles of diamond grain size of micropowder 90wt% is in 2~7 μm of models in diamond polishing fluid In enclosing, pH=8~11 of polishing fluid, polishing disk temperature is controlled between 22~33 DEG C, polishing process include successively execute with Lower three steps:
First polishing step: rubbing head pressure is controlled in 0.35~0.6N/cm2, upper polishing disk rotating speed control is 10~20 Rev/min, downshort disk revolving speed is controlled at 8~15 revs/min, and polishing fluid flow control is in 15~20mL/min；
Second polishing step: rubbing head pressure is controlled in 0.50~0.85N/cm2, upper polishing disk rotating speed control is 25~30 Rev/min, lower polishing disk rotating speed control is at 15~20 revs/min, and polishing fluid flow control is in 12~16mL/min；
Third polishing step: rubbing head pressure is controlled in 0.25~0.55N/cm2, upper polishing disk rotating speed control is 34~38 Rev/min, lower polishing disk rotating speed control is at 20~25 revs/min, and polishing fluid flow control is in 12~16mL/min.
Further, the polishing time of first polishing step is 7~15min, the polishing of second polishing step Time is 15~25min, and the polishing time of the third polishing step is 5~12min.
Further, in first polishing step, the second polishing step and third polishing step, upper polishing disk and lower throwing The steering of CD is contrary, and from the first polishing step to third polishing step, the revolving speed of upper polishing disk and lower polishing disk is passed Increase.
Further, in first polishing step, the second polishing step and third polishing step, the revolving speed of upper polishing disk Greater than the revolving speed of lower polishing disk.
Further, the polishing flow quantity of the first polishing step of polishing fluid flow-rate ratio of second polishing step is small, the Three polishing steps are identical as the polishing flow quantity of the second polishing step.
Further, the sapphire crystalline substance brick thickness that the sapphire crystalline substance tile polishing method is polished is (i.e. between two burnishing surfaces Distance) be greater than 5mm and be less than 100mm, the size of length-width direction is respectively positioned between 35mm~220mm, the weight of monolithic crystalline substance brick For 50g~5000g.
The utility model has the advantages that the present invention polishes sapphire crystalline substance brick before slice, then examine, can effectively end scarce Sunken stream leads to rear process, reduces board, manpower, auxiliary material waste, has saved processing cost.
As an improvement reducing brilliant brick corner angle chipping to guarantee that sapphire crystalline substance brick polishes yield, the present invention proposes one Kind speed change polishing method, first by the small pressure of the first polishing step, the mode of the slow-speed of revolution, big flow is polished, effectively The sharp parts on brilliant brick surface are removed, reduce the scuffing of brilliant brick chipping and polishing disk.Then it is used by the second polishing step High pressure, middle revolving speed, the appropriate mode amount of the being removed polishing for lowering flow, it is not saturating to reduce polishing, makes through the first polishing step Rapid sapphire crystalline substance brick surface is more smooth；Finally by third polishing step low-pressure, high revolving speed, it is ensured that brilliant brick polishes table Face finish.
Sapphire crystalline substance tile polishing method of the invention is using Twp-sided polishing machine and diamond polishing fluid to sapphire crystalline substance brick surface Carry out twin polishing, keep the surface of sapphire crystalline substance brick penetrating and without scratch, without chipping, flawless, polishing according to the invention The two-sided penetrating disposable qualification rate of sapphire crystalline substance brick obtained by method is greater than 80%, and the surface roughness of panel is less than 10nm, flatness is less than 30 μm, and for product thickness tolerance less than 20 μm, two machined surfaces of brilliant brick are penetrating after processing, is very suitable to crystalline substance Brick internal flaw is examined.
It is verified through actual production, the present invention can effectively remove brilliant brick surface frosted trace, reach mirror effect, for brilliant brick Fault detection provides platform, workshop section's processing cost after saving；Polishing method of the invention simultaneously is also applied for aluminium oxide, zirconium oxide The polishing of the nonmetallic brick such as ceramics.
Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention. The present invention is further detailed explanation below.
Specific embodiment
The embodiment of the present invention is described in detail below, but the present invention can be limited and be covered according to claim Multitude of different ways implement.
Embodiment one
Sapphire crystalline substance brick clamping is fixed between the upper polishing disk of Twp-sided polishing machine and lower polishing disk with jig, upper polishing Disk and lower polishing disk are all made of resin copper dish, and polishing fluid uses diamond polishing fluid, and diamond grain size of micropowder is main in diamond polishing fluid It is distributed in 3~5 μ ms, polishing fluid pH=9.6, polishing process includes three steps successively executed described in table 1:
Table 1
Step Upper disk rotating speed Lower disk rotating speed Polish flow quantity Polishing disk temperature Rubbing head pressure Process time
The first step 15 revs/min 10 revs/min 18mL/min 28~33 DEG C 0.5N/cm2 10min
Second step 27 revs/min 17 revs/min 15mL/min 28~33 DEG C 0.75N/cm2 20min
Third step 34 revs/min 24 revs/min 15mL/min 28~33 DEG C 0.35N/cm2 10min
In first polishing step of embodiment one, the second polishing step and third polishing step, upper polishing disk and lower polishing The steering of disk is contrary.
If the blank that the sapphire crystalline substance tile polishing method in embodiment one is polished is the indigo plant that dry plate thickness is 40.35mm Jewel crystalline substance brick, the size of each sapphire crystalline substance brick length-width direction are 36.75mm, and the weight of monolithic crystalline substance brick is located at 50g~1500g model In enclosing.
Embodiment two
Sapphire crystalline substance brick clamping is fixed between the upper polishing disk of Twp-sided polishing machine and lower polishing disk with jig, upper polishing Disk and lower polishing disk are all made of resin copper dish, and polishing fluid uses diamond polishing fluid, and diamond grain size of micropowder is main in diamond polishing fluid It is distributed in 5~7 μ ms, polishing fluid pH=9.2, polishing process includes three steps successively executed described in table 2:
Table 2
In first polishing step of embodiment two, the second polishing step and third polishing step, upper polishing disk and lower polishing The steering of disk is contrary.
If the blank that the sapphire crystalline substance tile polishing method in embodiment two is polished is the indigo plant that dry plate thickness is 64.5mm Jewel crystalline substance brick, each sapphire crystalline substance brick width are 135.5mm, and the size of length direction is respectively positioned between 80~160mm, monolithic crystalline substance brick Weight is located within the scope of 1000g~3000g.
Embodiment three
Sapphire crystalline substance brick clamping is fixed between the upper polishing disk of Twp-sided polishing machine and lower polishing disk with jig, upper polishing Disk and lower polishing disk are all made of resin copper dish, and polishing fluid uses diamond polishing fluid, and diamond grain size of micropowder is main in diamond polishing fluid It is distributed in 2~5 μ ms, polishing fluid pH=10, polishing process includes three steps successively executed described in table 3:
Table 3
Step Upper disk rotating speed Lower disk rotating speed Polish flow quantity Polishing disk temperature Rubbing head pressure Process time
The first step 18 revs/min 13 revs/min 20ml/min 24~26 DEG C 0.55N/cm2 8min
Second step 28 revs/min 18 revs/min 12ml/min 24~26 DEG C 0.85N/cm2 15min
Third step 38 revs/min 24 revs/min 12ml/min 24~26 DEG C 0.45N/cm2 10min
In first polishing step of embodiment three, the second polishing step and third polishing step, upper polishing disk and lower polishing The steering of disk is contrary.
If the blank that the sapphire crystalline substance tile polishing method in embodiment three is polished is the indigo plant that dry plate thickness is 30.5mm Jewel crystalline substance brick, sapphire crystalline substance brick width be 35.5mm, the size of each sapphire crystalline substance brick length direction be respectively positioned on 80mm~220mm it Between, the weight of monolithic crystalline substance brick is located within the scope of 50g~1000g.
According to gathering around of obtaining of the polishing method of embodiment one, embodiment two and embodiment, there are two the sapphire of mirror surface is brilliant Brick, surface roughness are respectively less than 10nm, and flatness is respectively less than 30 μm, and product thickness tolerance is respectively less than 20 μm after processing, and product adds For work yield up to 95%, two machined surfaces of brilliant brick are penetrating, are very suitable to brilliant brick fault detection.
Comparative example one
In comparative example one, it is not provided with the first polishing step, remaining parameter and condition are identical as embodiment three, referring specifically to table 4。
Table 4
Step Upper disk rotating speed Lower disk rotating speed Polish flow quantity Polishing disk temperature Pressure Process time
The first step / / / / / 0min
Second step 28 revs/min 18 revs/min 12ml/min 24~26 DEG C 0.85N/cm2 15min
Third step 38 revs/min 24 revs/min 12ml/min 24~26 DEG C 0.45N/cm2 10min
One verification result of comparative example: the chipping that brilliant brick corner angle occur；Feed intake 35 blocks；Scratch 31 pieces；Yield 11.4%
Comparative example two
In comparative example two, upper polishing disk and lower polishing disk use soft polishing pad, without the use of hard resin copper dish, Remaining parameter and condition are the same as example 1, referring specifically to table 5.
Table 5
Step Upper disk rotating speed Lower disk rotating speed Polish flow quantity Polishing disk temperature Pressure Process time
The first step 15 revs/min 10 revs/min 18ml/min 28~33 DEG C 0.5N/cm2 10min
Second step 27 revs/min 17 revs/min 15ml/min 28~33 DEG C 0.75N/cm2 20min
Third step 34 revs/min 24 revs/min 15ml/min 28~33 DEG C 0.35N/cm2 10min
Verification result: upper machine 5min polishing disk damage；Experiment, which is interrupted, to be carried out.
Comparative example three
In comparative example three, upper polishing disk is exchanged with lower polishing disk rotating speed (descends polishing disk rotating speed to turn greater than upper polishing disk Speed), remaining parameter and condition and embodiment three are essentially identical, are specifically shown in Table 6.
Table 6
Step Lower disk rotating speed Upper disk rotating speed Polish flow quantity Polishing disk temperature Pressure Process time
The first step 18 revs/min 13 revs/min 20ml/min 24~26 DEG C 0.55N/cm2 10min
Second step 28 revs/min 18 revs/min 12ml/min 24~26 DEG C 0.85N/cm2 15min
Third step 38 revs/min 24 revs/min 12ml/min 24~26 DEG C 0.45N/cm2 10min
Verification result: the chipping that brilliant brick corner angle occur；It feeds intake 37 pieces；Face is not 17 pieces saturating；Yield 54%.
Comparative example four
In comparative example four, polishing fluid uses SiO2 polishing fluid, and SiO2 abrasive grain diameter is 0.5nm in SiO2 polishing fluid, remaining Condition and parameter and embodiment three are essentially identical, are specifically shown in Table 7.
Table 7
Step Upper disk rotating speed Lower disk rotating speed Polish flow quantity Polishing disk temperature Pressure Process time
The first step 18 revs/min 13 revs/min 20ml/min 24~26 DEG C 0.55N/cm2 10min
Second step 28 revs/min 18 revs/min 12ml/min 24~26 DEG C 0.85N/cm2 15min
Third step 38 revs/min 24 revs/min 12ml/min 24~26 DEG C 0.45N/cm2 10min
Verification result: without removal amount；Brilliant brick is not thrown, yield 0%.
The contrast effect of each embodiment and comparative example such as table 8:
Table 8
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims (6)

1. a kind of sapphire crystalline substance tile polishing method, which is characterized in that sapphire crystalline substance brick clamping is fixed on twin polishing with jig Between the upper polishing disk of machine and lower polishing disk, upper polishing disk and lower polishing disk are all made of resin copper dish, and polishing fluid is thrown using diamond Light liquid, in diamond polishing fluid the above distribution of particles of diamond grain size of micropowder 90wt% in 2~7 μ ms, the pH=8 of polishing fluid~ 11, polishing disk temperature control between 22~33 DEG C, polishing process include successively execute the following three steps:
First polishing step: rubbing head pressure is controlled in 0.35~0.6N/cm2, the control of upper polishing disk rotating speed at 10~20 revs/min, Downshort disk revolving speed is controlled at 8~15 revs/min, and polishing fluid flow control is in 15~20mL/min；
Second polishing step: rubbing head pressure is controlled in 0.50~0.85N/cm2, the control of upper polishing disk rotating speed 25~30 turns/ Point, lower polishing disk rotating speed control is at 15~20 revs/min, and polishing fluid flow control is in 12~16mL/min；
Third polishing step: rubbing head pressure is controlled in 0.25~0.55N/cm2, the control of upper polishing disk rotating speed 34~38 turns/ Point, lower polishing disk rotating speed control is at 20~25 revs/min, and polishing fluid flow control is in 12~16mL/min.
2. a kind of sapphire crystalline substance tile polishing method according to claim 1, which is characterized in that first polishing step Polishing time is 7~15min, and the polishing time of second polishing step is 15~25min, the throwing of the third polishing step It is 5~12min between light time.
3. a kind of sapphire crystalline substance tile polishing method according to claim 1, which is characterized in that first polishing step, In second polishing step and third polishing step, the steering of upper polishing disk and lower polishing disk is contrary, and from the first polishing step To third polishing step, the revolving speed of upper polishing disk and lower polishing disk is incremented.
4. a kind of sapphire crystalline substance tile polishing method according to claim 1, which is characterized in that first polishing step, In second polishing step and third polishing step, the revolving speed of upper polishing disk is all larger than the revolving speed of lower polishing disk.
5. a kind of sapphire crystalline substance tile polishing method according to claim 1, which is characterized in that second polishing step The polishing flow quantity of the first polishing step of polishing fluid flow-rate ratio is small, the polishing flow quantity of third polishing step and the second polishing step It is identical.
6. a kind of sapphire crystalline substance tile polishing method described according to claim 1~any one of 5, which is characterized in that described The sapphire crystalline substance brick thickness that sapphire crystalline substance tile polishing method is polished is greater than 5mm and is less than 100mm, the equal position of the size of length-width direction Between 35mm~220mm, the weight of monolithic crystalline substance brick is 50g~5000g.
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CN110434681B (en) * 2019-07-24 2021-09-07 中国科学院上海光学精密机械研究所 Double-side high-precision polishing method for large-caliber sapphire window element

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* Cited by examiner, † Cited by third party
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MS-6BC型精密双面抛光机的研制;张璟;《新技术新工艺》;20080225;参见第35-37页 *

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