CN1076828C - 检测涂敷在晶片上的光刻胶膜微观厚度差所致缺陷的方法 - Google Patents
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Abstract
一种通过肉眼检测涂敷在晶片上的光刻胶膜微观厚度差所致缺陷的方法,即使是256M以上的DRAM器件也能精确控制光刻胶膜图形关键尺寸,并允许精确地分析产额,该法包括以下各步骤:使光刻胶膜在低温经受热处理,以使得某些低分子量化合物或溶剂分子保留在光刻胶膜内;在光刻胶膜上形成一定厚的特殊材料层,使留下的低分子量化合物或溶剂分子从光刻胶膜经特殊材料层的较薄部分涌出。
Description
本发明一般涉及检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的方法。本发明特别涉及可见地检测这种缺陷的方法,以便容易地改善光刻胶膜的结构布局。
当由于器件的高集成化,使设计标准更小,或晶片的相对尺寸更小时,更难于均匀地保持用光刻法在遍布整个晶片的许多管芯上所形成的图形关键尺寸(下文称之为CD)。此外,涂敷在晶片上的光刻胶膜的微观厚度差,尽管曝光能量相同,也会引起驻波效应之差别,导致在晶片上所形成的各管芯的CD反复变化。驻波效应的总量(S)由方程式I代表:
S=C(R1×R2)1/2·e-aD [I]
其中C为一常数;
R1和R2各是从光刻胶膜底部和晶片上表面之间的边界所散射的光强度;
a是与光刻胶膜成分有关的光透射率参数;
D是光刻胶膜的厚度。
因为驻波效应总量(S)具有如方程I所表示的正比关系,那么,在光刻胶膜厚度的同一周期上,S值的变化取决于R1和R2值。
参照图1,图中表示CD对涂敷在晶片上的光刻胶膜厚度的曲线。如该曲线所示,CD曲线呈周期性变化。CD值的变化依赖于R1和R2值。在该图中,参数字母“t”是相应于驻波效应周期的光刻胶膜涂覆厚度差。光刻胶膜的涂敷厚度差正比于λ/4n,其中λ是波长,n是折射率。于是,光刻胶膜的涂敷厚度差(t)在用短波波长的光源曝光过的高集成器件中被微观地改变,因而使CD值变化。对于256M的DRAM,具有248nm波长的准分子激光被用于折射率在1.6~1.7范围的光刻胶膜。
一般来讲,旋涂工艺表现出其光刻胶膜的涂敷厚度自身的特性差异。旋涂工艺的差异是不能用肉眼测出的。这可用专用测量设备测出。然而,当采用这类设备测量涂敷状态时,就出现了问题。因为,在许多有必要精确检验光刻胶膜涂敷状态的涂敷部位不能进行测量,或不能识别涂敷形状的轮廓,难以适当地控制旋转速度、光刻胶膜的甩掉量、加速度以及当进行涂敷工艺曝光之前的热处理步骤周期,以致妨碍了器件的高度集成化。
本发明的主要目的在于提供一种避开前述的与已有技术有关的问题,用肉眼检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的方法。
本发明的另一目的在于提供一种检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的方法。即使在256M以上的DRAM器件中也能精确控制光刻胶膜图形关键尺寸。
本发明的又一目的在于提供一种检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的方法。它允许精确分析产额。
根据本发明,通过提供一种检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的方法可实现上述目的,该方法包括以下各步骤:使光刻胶膜在150℃-300℃温度下经受低温热处理,以使得某些低分子量的化合物或者溶剂分子保持在光刻胶膜中;在光刻胶膜上形成特殊材料层;在200℃~500℃温度下实行高温热处理,以使保持在光刻胶膜中的低分子量化合物或溶剂分子从特殊材料层的较薄部分逸出,其被作为缺陷;检测经特殊材料层逸出的上述缺陷。
下面参照附图,通过详细描述本发明的优选实施方案,对本发明的上述目的及其它优点会更加明了。
图1是表示CD对涂敷在晶片上的光刻胶膜厚度的周期变化曲线图;
图2是根据本发明,表明检测涂敷在晶片上的光刻胶膜微观厚度差所致缺陷的工艺的示意剖面图;以及
图3是根据本发明,表示光刻胶膜厚度的可见的非均匀性的顶视图。
参照附图可更好地了解本发明优选实施方案的用途。
参照图2,图中表明检测涂敷在晶片上的光刻胶膜的微观厚度差所致缺陷的工艺。如该图所示,在晶片4上形成一层光刻胶膜3,然后进行低温热处理,以使得某些低分子量化合物或溶剂2保留在光刻胶膜3内。然后,在处理过的光刻胶膜3上形成一层薄的其成分与特性不同于光刻胶膜3的特殊材料层1。最后,在高温热处理下使低分子量化合物或溶剂2经特殊材料层1的较薄部分从光刻胶膜3涌出。
特殊材料层1的厚度大约为500或更小,是用旋涂的玻璃(SOG)膜或氧化层形成。后者是用等离子增强化学汽相淀积(PECVD)工艺形成的。当进行低温热处理时,其温度为150~300℃,当进行高温热处理时,其温度为200~500℃。
由于实行高温热处理工艺,残留在光刻胶膜3内的低分子量化合物或溶剂2会经特殊材料层1较薄部分从光刻胶膜3涌出,或者烧掉。在图1中参考字母“t”是光刻胶膜3的厚度差,即层差高度。因而,在低阶层面上的特殊材料层比高阶层面上的厚,因此在高温热处理后,表现为微小的缺陷。
图3是表示由于涂敷在晶片上的光刻胶膜3的厚度差显出的缺陷的顶视图,其中黑点较密的部分代表由高温热处理所产生的缺陷更多,可归结为在光刻胶膜3较高部分所形成的特殊材料层较薄。
综上所述,在光刻胶膜的涂层上所产生的缺陷可通过对光刻胶膜的低温处理并随后在其上形成特殊材料层,并经过特殊材料层的较薄部分,使缺陷显出,或同时进行特殊材料层涂敷步骤和低温度处理2~3秒钟来检测。
根据本发明,可容易检测由光刻胶膜微观厚度差的涂层缺陷,允许精确地控制256M以上的DRAM器件的CD。因而,可以实现对工艺缺陷的检测或监视。
在阅读上述说明后,本领域的技术人员会更加明了本文描述的本发明的其它特性、优点及实施方案。在这一点上,虽然已非常详细地说明了本发明的具体实施方案,但在不脱离说明书所描述的和权利要求书所请求保护的本发明的精神和范畴前提下,对这些实施方案可以做出各式各样的变化和改型。
Claims (4)
1.一种检测涂敷在晶片上的光刻胶膜微观厚度差所致缺陷的方法,该方法包括以下各步骤:
使光刻胶膜在150℃-300℃温度下经受低温热处理;
在该光刻胶膜上形成特殊材料层;
在200℃~500℃温度下实行高温热处理,使低分子量化合物或溶剂分子经特殊材料层的较薄部分从光刻胶膜逸出,其被认作为缺陷;
检测经特殊材料层逸出的上述缺陷。
2.根据权利要求1所述的一种检测涂覆在晶片上的光刻胶膜微观厚度差所致缺陷的方法,其中的特殊材料层是一层等离子增强化学汽相淀积的氧化层或旋涂玻璃层。
3.根据权利要求1所述的一种检测涂覆在晶片上的光刻胶膜微观厚度差所致缺陷的方法,其中的特殊材料层的厚度在500A以下。
4.根据权利要求1所述的一种检测涂覆在晶片上的光刻胶膜微观厚度差所致缺陷的方法,其中的特殊材料层的形成步骤是与低温热处理步骤同时进行的,时间2~3秒。
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KR1019940016656A KR0154164B1 (ko) | 1994-07-11 | 1994-07-11 | 반도체소자의 제조방법 |
KR94-16656 | 1994-07-11 |
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US (1) | US5905017A (zh) |
KR (1) | KR0154164B1 (zh) |
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GB (1) | GB2291194B (zh) |
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WO1999030109A1 (en) * | 1997-12-09 | 1999-06-17 | Advanced Micro Devices, Inc. | Endpoint detection method for cmp processes |
US20100151118A1 (en) * | 2008-12-17 | 2010-06-17 | Eastman Chemical Company | Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings |
CN109029334B (zh) * | 2018-07-12 | 2020-06-02 | 宁波大学 | 岩体结构面粗糙度系数尺寸效应全域搜索测量方法 |
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US4774164A (en) * | 1987-04-06 | 1988-09-27 | Tegal Corporation | Chrome mask etch |
US4824763A (en) * | 1987-07-30 | 1989-04-25 | Ekc Technology, Inc. | Triamine positive photoresist stripping composition and prebaking process |
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KR970007173B1 (ko) * | 1994-07-14 | 1997-05-03 | 현대전자산업 주식회사 | 미세패턴 형성방법 |
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1994
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GB9513910D0 (en) | 1995-09-06 |
CN1122912A (zh) | 1996-05-22 |
US5905017A (en) | 1999-05-18 |
KR0154164B1 (ko) | 1998-12-01 |
KR960005848A (ko) | 1996-02-23 |
GB2291194A (en) | 1996-01-17 |
GB2291194B (en) | 1998-03-11 |
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