CN107667418A - 用于降低基板温度非均匀性的改良式装置 - Google Patents
用于降低基板温度非均匀性的改良式装置 Download PDFInfo
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Abstract
本公开内容的实施方式提供盖组件,该盖组件包括盖件,该盖件具有多个通口,且每一通口具有低于1mm的直径,例如在约0.1mm至约0.9mm之间。盖件可设置于基板的设备侧表面与反射器板之间,皆设置于热处理腔室内。在热处理腔室内具有多个小通口的盖件的存在改善了在处理掺杂基板之后随着时间的热均匀性。
Description
技术领域
本公开内容的实施方式一般地涉及用于热处理基板的装置。
背景技术
使用基板处理系统以制造半导体逻辑及内存设备、平板显示器、CD ROM及其他设备。在处理期间,这些基板可经受化学气相沉积(CVD)及快速热处理(RTP);RTP包含,例如:快速热退火(RTA)、快速热清洁(RTC)、快速热CVD(RTCVD)、快速热氧化(RTO)及快速热氮化(RTN)。RTP系统通常包括加热灯具、LED、激光器、或其组合,而经由光透射式窗部辐射地加热基板。RTP系统也可包括其他光学元件,例如相对于基板表面的光学反射性表面及处理期间用于量测基板温度的光学检测器。
离子植入为用于将化学杂质导入半导体基板以形成用于场效应pn结或双极晶体管制造的方法。这些杂质包含p型掺杂物及n型掺杂物,p型掺杂物例如硼(B)、铝(Al)、镓(Ga)、铍(Be)、镁(Mg)、及锌(Zn),且n型掺杂物例如磷(P)、砷(As)、锑(Sb)、铋(Bi)、硒(Se)及碲(Te)。化学杂质的离子植入在植入的范围破坏半导体基板的结晶度。在低杂质能量下,对基板发生相对小的损害。然而,植入的掺杂物在基板中不会停留在电活性的地点。因此,使用退火处理以恢复基板的结晶度且驱动植入的掺杂物于电活性的结晶地点上。可使用诸如RTP之类的热处理以活化掺杂物。
已发现:处理期间跨基板的热均匀性在处理掺杂As的基板之后随着时间降低。图2A为示出了处理期间跨基板的热均匀性在处理高度掺杂As的基板之后降低的图表。如图2A图中所示,在处理掺杂基板之前,示出跨基板(在x轴中示出为线扫瞄)的温度(在y轴中示出为片电阻Rs)剖面为曲线“之前”。在处理25个高度掺杂As的基板之后,示出跨基板的温度剖面为曲线“25之后”。在处理100个高度掺杂As的基板之后,示出跨基板的温度剖面为曲线“100之后”。在处理500个高度掺杂As的基板之后,示出跨基板的温度剖面为曲线“500之后”。如图2A中所示,曲线“500之后”、“100之后”、及“25之后”的温度剖面清楚地较曲线“之前”不均匀。
因此,需要改进的装置以改良处理期间的热均匀性。
发明内容
本公开内容的实施方式一般地涉及用于热处理基板的装置。在一个实施方式中,处理腔室包含:基板支撑件;能量源,该能量源面对该基板支撑件;反射器板,该反射器板具有反射性表面,在该能量源与该反射器板之间设置该基板支撑件;及盖件,在该反射器板与该基板支撑件之间设置该盖件。该盖件包含多个通口,且这多个通口中的每一通口具有低于1mm的直径。
在另一实施方式中,处理腔室包括:基板支撑件;能量源,该能量源面对该基板支撑件;反射器板,该反射器板具有反射性表面,在该能量源与该反射器板之间设置该基板支撑件;及盖件,在该反射器板与该基板支撑件之间设置该盖件。该盖件包含多个通口,且这多个通口中的每一通口具有范围在约0.1mm至约0.9mm的直径。
在另一实施方式中,方法包含以下步骤:在处理期间自能量源向基板支撑件输送电磁能量,其中该基板支撑件经构造以支撑基板的非设备侧表面;及输送热处理气体至盖件容积区域,在反射器板与盖件之间形成该盖件容积区域。在该反射器板与该能量源之间设置该盖件,被输送至该盖件容积区域的该热处理气体的至少一部分自该盖件容积区域经由在该盖件中形成的多个通口流动至该基板的设备侧表面的一部分。这多个通口中的每一通口具有低于1mm的直径。
附图说明
以上简要概述的本公开内容的上述详述特征能够被具体理解的方式、以及本公开内容的更特定描述,可以通过参照实施方式获得,实施方式中的一些绘示于附图中。然而,应当注意,所附图式仅绘示本公开内容典型的实施方式,因此不应视为对本发明的范围的限制,因为本公开内容可允许其他等同有效的实施方式。
图1为根据于此描述的实施方式的处理腔室的示意横截面图。
图2为根据于此描述的实施方式的盖件的平面图,该盖件经构造以设置于图1的处理腔室中。
图3A至3B为根据于此描述的实施方式的图解了在图1的处理腔室中包含图2中所示出的盖件的益处的图表。
图4为根据于此描述的实施方式的盖件的平面图,该盖件经构造以设置于图1的处理腔室中。
为了便于理解,尽可能地使用了相同附图标号,以标示附图中共通的相同元件。考虑到,在没有进一步地详述下于一个实施方式中公开的元件可有益地使用于其他实施方式。
具体实施方式
本公开内容的实施方式提供盖组件,该盖组件包含盖件,该盖件具有多个通口,且每一通口具有低于1mm的直径,例如在约0.1mm至约0.9mm之间。盖件可设置于基板的设备侧表面与反射器板之间,皆设置于热处理腔室内。在热处理腔室内具有多个小通口的盖件的存在改良了在处理掺杂基板之后于处理期间随着时间的热均匀性。
图1为根据于此描述的实施方式的处理腔室100的示意横截面图。处理腔室100可为热处理腔室,例如RTP腔室。处理腔室100包含界定处理容积104及系统控制器199的腔室主体102,系统控制器199经调适以控制处理腔室100内执行的多种处理。一般而言,系统控制器199包括一个或多个处理器、内存、及适于控制处理腔室100内的构件的操作的指令。
可在腔室主体102的底部侧面上形成辐射源窗部106。辐射源窗部106可由石英或对自灯具108A输送的电磁能量具光学穿透性的其他相似材料形成,灯具108A设置于辐射能量源108内。此处使用的“穿透”定义为传输给定波长或光谱的至少95%的光。设置于窗部106下方的辐射能量源108经构造以引导辐射能量朝向基板122的非设备侧表面122B,基板122设置于处理容积104内。于此描述的词语如“下方”、“上方”、“上”、“下”、“顶部”、及“底部”并不意指绝对方向,而是相对于处理腔室100的基底的方向。可设置反射器板110于处理容积104内部的腔室主体102的上方壁112上。在一个构造中,绕着反射器板110边缘放置水冷却金属板114,以进一步在处理期间提供冷却至上方壁112。可放置多个传感器126(例如高温计)覆于上方壁112,以经由在反射器板110及上方壁112中形成的传感器通口124来检测基板122的温度及处理容积104中的其他相关部件。多个传感器126可与温度控制器127通信,温度控制器127经调适以自传感器126接收信号且将所接收数据通信至系统控制器199。
腔室主体100也可包括升降组件128,升降组件128经构造以垂直移动及旋转设置于处理容积104中的转体115。可在转体115上设置支撑环116。边缘环118,或基板支撑件或基板支撑组件,可由支撑环116支撑。基板122可在处理期间由边缘环118支撑。边缘环118及基板122置于辐射能量源108上方,使得辐射能量源108经设置而面对基板支撑件,基板支撑件包括边缘环118及支撑环116。以此方式,辐射加热源108可加热基板122及边缘环118两者。
反射器板110一般包括反射表面113且典型地包括在反射器板110的主体内形成的冷却通道129。冷却通道129耦接至流体输送设备190,流体输送设备190经构造以使得冷却流体在冷却通道129内流动以维持反射器板110及上方壁112于预定温度。在一个示例中,反射器板110维持于约50与150摄氏度之间的温度,例如约75摄氏度。反射表面113经构造以反射/重新引导由辐射能量源108提供或由基板122、边缘环118和/或支撑环116发射的能量回到处理容积104及基板122。
处理腔室100一般包括盖组件150,在上方壁112与基板122之间放置盖组件150。盖组件150可包括盖件152及盖支撑件151。盖支撑件151经构造以在处理容积104内放置及保留盖件152。在一个构造中,放置盖支撑件151靠近反射器板110的外边缘,且在直径上至少与基板122的直径一样大(例如,针对300mm的晶片,≧300mm)。在一个构造中,在反射器板110的外边缘与水冷却金属板114的内边缘之间放置盖支撑件151。盖支撑件151可被闩住或机械耦接至上方壁112、反射器板110或水冷却金属板114,以提供盖组件150(例如,盖件152)中的部件与上方壁112、反射器板110或水冷却金属板114之间的结构及热耦合两者。在另一实施方式中,可通过使用热隔绝材料或通过调整这些零件之间的热接触,将盖支撑件151至少部分地与上方壁112、反射器板110或水冷却金属板114热隔绝。
处理腔室100一般也包括气源160,气源160经构造以输送热处理气体至盖件容积区域155,接着通过通口153的使用或穿过孔(穿过盖件152而形成)至处理容积104及基板122的设备侧表面122A。热处理气体可包含惰性和/或供以增强处理容积104内所执行的热处理的处理气体。在一个示例中,热处理气体可为自以下组成的群组所选择的气体:氮、氩、氢、氧、氦、氖、卤素气体、及其他有用的气体和/或其组合。在另一示例中,热处理气体可为惰性气体,例如自以下组成的群组所选择的气体:氮、氦、氖及氩。
一般而言,盖件152充当对被排出材料的物理阻挡,例如,在处理期间自基板向反射器板110及传感器126流动的p或n型掺杂物(例如,第2图中的材料流“A”)。在一个实施方式中,在距反射器板110的表面113一距离处放置盖件152,以便形成盖件152与反射器板110的表面113之间的盖件容积区域155。盖件容积区域155为至少部分地封闭的区域,该封闭区域由盖件152、盖支撑件151、反射器板110及上方壁112界定。在一些构造中,盖件容积区域155至少部分地密封,以允许在气源160提供热处理气体流动至盖件容积区域155且经由通口153(在盖件152中形成)离开盖件容积区域155时,在盖件容积区域155中形成背侧压力。令人惊讶地发现:盖件容积区域155中形成的背侧压力保持跨基板的热均匀性免于随着时间降低。
同样,盖件152的热属性也允许盖件152充当阻挡,以减低盖件152上的沉积量。在一个示例中,盖件152由光学穿透性材料形成,例如火焰熔融石英、电性熔融石英、合成熔融石英、含高氢氧基的熔融石英(亦即,高OH石英)、蓝宝石、或具有所需光学属性(例如,光学传输系数及光学吸收系数)的其他光学穿透性材料。在一个示例中,盖件包含含高氢氧基的熔融石英材料,包括具有约600与约1300ppm之间的氢氧基杂质的石英材料。在一个示例中,盖件152包含含高氢氧基的熔融石英材料,包括具有约1000ppm与约1300ppm之间的氢氧基杂质的石英材料。盖支撑件151可由金属或热隔绝材料形成,例如不锈钢、熔融石英、铝、或能够承受热处理温度且具有所需机械属性(例如,与盖件152所制成材料相似的热膨胀系数(CTE))的其他材料。
在处理期间,辐射能量源108经构造以快速加热置于边缘环118上的基板122。加热基板122的处理造成基板上或基板内一个或多个层排气(见箭头“A”及“B”)。典型地,自基板122的设备侧表面122A经排气的材料量(见箭头A)大于自基板122的非设备侧表面122B经排气的材料量(见箭头B)。
沉积于盖件152上的材料量取决于处理期间盖件152的温度。一般而言,选择盖件152的温度以使该温度高到足以阻止排出材料的凝结,但低到足以阻止经排气的材料与用以形成盖件152的材料之间的反应。经排气的材料与用以形成盖件152的材料之间的反应可影响盖件152随着时间的光学属性,因而造成处理腔室100中执行的热处理中的漂移(drift)。
图2为根据于此描述的实施方式的盖件152的平面图。如图2中所示,盖件152包括多个通口153。可存在任意合适数量的通口153。在一个实施方式中,存在52个通口153,在52个通口153中,在28mm直径的圆上设置4个通口153、在69mm直径的圆上设置8个通口153、在94mm直径的圆上设置12个通口153、在121mm直径的圆上设置12个通口153、及在146mm直径的圆上设置12个通口153。28mm直径的圆、69mm直径的圆、94mm直径的圆及121mm直径的圆可为同心的,且可与盖件152同心。盖件152的大小可依基板122的大小而变化,且通口153的图案可依盖件152的大小而变化。通口153的图案可经构造以使处理气体均匀地分配至基板122的设备侧表面122A。通口153的图案可相对于处理腔室100的中央轴为对称,或相对于处理腔室100的中央轴为非对称。盖件152中的通口153的密度可以或不可跨盖件152一致。通口153可具有相同直径,例如低于约1mm。或者,通口153可具有不同直径,以便调整处理气体流动以补偿处理腔室100中的系统化气体流动非均匀性。如果通口153的直径不同,则通口153的最大直径低于1mm,例如自约0.1mm至约0.9mm。
在一些实施方式中,也可使用通口153的排列以提供对所选择基板面积的温度调整。例如,可选择通口的排列方式以提供增加的向基板122的区域的气体流动以达到区域中的冷却(如果该冷却为所需)。在温度非均匀性持续的情况下,这些量测可为有帮助的。可以非均匀排列来排列通口153,使得经过通口的气体流动部分地或完全地补偿这类温度非均匀性。图4中示出具有非均匀排列的通口153的盖件152的示例。
令人惊讶地发现:通过减少每一通口153的直径至低于1mm,例如由约0.1mm至约0.9mm,在处理掺杂基板之后跨基板的热均匀性不会随着时间降低。在一个实施方式中,每一通口153具有范围在约0.25mm至约0.75mm的直径,例如约0.5mm。图3B中所示具有较小通口153对于处理期间热均匀性的效应。如图3B中所示,处理掺杂基板之前、处理25个掺杂基板之后、处理100个掺杂基板之后、及处理500个掺杂基板之后的温度剖面实质相同。由于在盖件152中形成较小的通口153,因此,在处理掺杂基板之后,跨基板的热均匀性不会随着时间降低。
尽管前述针对本公开内容的实施方式,但在不背离本发明的基本范围的情况下可设计本公开内容的其他及进一步的实施方式,且本发明的范围由随附的权利要求书来确定。
Claims (15)
1.一种处理腔室,包括:
基板支撑件;
能量源,所述能量源面对所述基板支撑件;
反射器板,所述反射器板具有反射性表面,其中在所述能量源与所述反射器板之间设置所述基板支撑件;和
盖件,在所述反射器板与所述基板支撑件之间设置所述盖件,其中所述盖件包含多个通口,且其中所述多个通口的每一通口具有低于1mm的直径。
2.如权利要求1所述的处理腔室,其中所述多个通口以非均匀性排列方式来布置。
3.如权利要求1所述的处理腔室,进一步包括窗部,在所述基板支撑件与所述能量源之间设置所述窗部。
4.如权利要求1所述的处理腔室,其中所述盖件包含石英。
5.如权利要求4所述的处理腔室,其中所述盖件包含具有在约600与约1300ppm之间的氢氧基(hydroxyl)杂质的熔融石英。
6.如权利要求1所述的处理腔室,其中所述盖件包含蓝宝石(sapphire)。
7.如权利要求1所述的处理腔室,其中所述反射器板包括冷却通道。
8.如权利要求1所述的处理腔室,进一步包括围绕所述反射器板设置的金属板。
9.如权利要求1所述的处理腔室,其中所述多个通口的每一通口具有范围在约0.25mm至约0.75mm的直径。
10.一种处理腔室,包括:
基板支撑件;
能量源,所述能量源面对所述基板支撑件;
反射器板,所述反射器板具有反射性表面,其中在所述能量源与所述反射器板之间设置所述基板支撑件;和
盖件,在所述反射器与所述基板支撑件之间设置所述盖件,其中所述盖件包含多个通口,且其中所述多个通口的每一通口具有范围在约0.1mm至约0.9mm的直径。
11.如权利要求10所述的处理腔室,其中所述盖件包含石英。
12.一种方法,所述方法包括以下步骤:
在处理期间自能量源向基板支撑件输送电磁能量,其中所述基板支撑件经构造以支撑基板的非设备侧表面;和
输送热处理气体至盖件容积区域,在反射器板与盖件之间形成所述盖件容积区域,其中在所述反射器板与所述能量源之间设置所述盖件,其中被输送至所述盖件容积区域的所述热处理气体的至少一部分自所述盖件容积区域经由在所述盖件中形成的多个通口流动至所述基板的设备侧表面的一部分,且其中所述多个通口的每一通口具有低于1mm的直径。
13.如权利要求12所述的方法,其中所述热处理气体包括惰性气体。
14.如权利要求12所述的方法,进一步包括以下步骤:使冷却流体在冷却通道内流动,在所述反射器板内形成所述冷却通道。
15.如权利要求12所述的方法,进一步包括以下步骤:在处理期间使用一个或多个传感器量测基板的温度,其中在处理期间在所述传感器与所述基板之间设置所述盖件及所述盖件容积区域。
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Also Published As
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WO2016195984A1 (en) | 2016-12-08 |
KR20180005748A (ko) | 2018-01-16 |
CN107667418B (zh) | 2022-03-01 |
US20160358789A1 (en) | 2016-12-08 |
TWI673755B (zh) | 2019-10-01 |
TW201711079A (zh) | 2017-03-16 |
KR102323363B1 (ko) | 2021-11-09 |
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