CN107653385A - 一种适用于铜丝的耐腐蚀改性方法 - Google Patents
一种适用于铜丝的耐腐蚀改性方法 Download PDFInfo
- Publication number
- CN107653385A CN107653385A CN201710863513.9A CN201710863513A CN107653385A CN 107653385 A CN107653385 A CN 107653385A CN 201710863513 A CN201710863513 A CN 201710863513A CN 107653385 A CN107653385 A CN 107653385A
- Authority
- CN
- China
- Prior art keywords
- copper
- copper wire
- alloy
- corrosion
- modifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45105—Gallium (Ga) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45155—Nickel (Ni) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
本发明公开了一种适用于铜丝的耐腐蚀改性方法,该改性方法先从原料铜中提取高纯铜,清洗、烘干后与镍、镓、磷钨酸钾、纳米氮化钽共同置于熔炼装置中熔化,经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,随后采用连续挤压机组生产合金铜带坯料,随后经粗拔、镀钯、精拔得到镀钯合金铜丝。利用该方法制备而成的镀钯合金铜丝具有良好的耐腐蚀性能,并且成本较低,能够满足行业的要求,具有良好的应用前景。同时,本发明还公开了该方法所制得的铜丝在集成电路中的应用。
Description
技术领域
本发明涉及金属材料加工技术领域,特别涉及一种抗氧化键合铜丝的制备方法及应用。
背景技术
铜具有优良的导电性、导热性以及化学稳定性而广泛应用于工业和日常生活中。键合铜线以其优良的力学性能、电学性能和低成本因素,在微电子封装上被逐步采用,现有的键合铜丝以高纯单晶铜为原材料,由于高纯单晶铜的氧化具有明显的取向性,非密排的晶面上界面能高、晶面原子堆垛相对疏松和原子尺度上粗糙,且氧化膜生长连续,氧化速率高于密排的晶面,单晶铜非密排的晶面氧化膜的致密性和附着性都较差,氧化速率大,耐腐蚀性差,不能满足高端微电子封装的要求。
镍是银白色金属,具有磁性和良好的可塑性。有好的耐腐蚀性,镍近似银白色、硬而有延展性并具有铁磁性的金属元素,它能够高度磨光和抗腐蚀。溶于硝酸后,呈绿色。主要用于合金(如镍钢和镍银)及用作催化剂(如兰尼镍,尤指用作氢化的催化剂)。因为镍的抗腐蚀性佳,常被用在电镀上,主要用来制造不锈钢和其他抗腐蚀合金,如镍钢、镍铬钢及各种有色金属合金,含镍成分较高的铜镍合金,就不易腐蚀。也作加氢催化剂和用于陶瓷制品、特种化学器皿、电子线路、玻璃着绿色以及镍化合物制备等。
镓是灰蓝色或银白色的金属。熔点很低,沸点很高。纯液态镓有显著的过冷的趋势,在空气中很稳定。常被用作制造半导体氮化镓、砷化镓、磷化镓、锗半导体掺杂元;纯镓及低熔合金可作核反应的热交换介质;高温温度计的填充料;有机反应中作二酯化的催化剂。
磷钨酸为无色、灰白色粉状固体或淡黄色的细小晶体。具有酸性,而且具有氧化还原性,是一种多功能的新型催化剂,具有很高的催化活性,稳定性好,可作均相及非均相反应,甚至可作相转移催化剂,对环境无污染,是绿色催化剂。略有风化性。能溶于醇、醚和水,溶于约0.5份水。
氮化钽,化工材料,用来制造精确片状电阻的材料,氮化钽电阻则可抵抗水汽的侵蚀。用作超硬质材料添加剂,可制备纯的五氯化钽:用于喷涂,增加变压器、集成线路、二极管的电稳定性。
基于目前常规键合铜丝存在容易被氧化(腐蚀)的缺陷,开发出一种新型铜丝以提高其耐腐蚀性能,从而促进复合铜丝在对材料要求较高的集成电路中的应用就显得尤为重要。
发明内容
为解决上述技术问题,本发明提供一种适用于铜丝的耐腐蚀改性方法,该改性方法先从原料铜中提取高纯铜,清洗、烘干后与镍、镓、磷钨酸钾、纳米氮化钽共同置于熔炼装置中熔化,经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,随后采用连续挤压机组生产合金铜带坯料,随后经粗拔、镀钯、精拔得到镀钯合金铜丝。利用该方法制备而成的镀钯合金铜丝具有良好的耐腐蚀性能,并且成本较低,能够满足行业的要求,具有良好的应用前景。
本发明的目的可以通过以下技术方案实现:
一种适用于铜丝的耐腐蚀改性方法,包括以下步骤:
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、3.8wt%的镓、1.2wt%的磷钨酸钾、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
优选地,所述步骤(2)中,引杆速度550~650mm/min,引杆直径为25mm。
优选地,所述步骤(3)中,退火温度为350℃,退火时间为50min。
所述步骤(4)中,电镀用钯的纯度要求大于99.999%。
本发明的另一个目的是提供该改性方法所制得的镀钯合金铜丝在集成电路中的应用。
本发明与现有技术相比,其有益效果为:
(1)本发明将高纯铜与镍、镓、磷钨酸钾、纳米氮化钽共同熔炼,通过镍、镓、磷钨酸钾、纳米氮化钽与铜之间所产生的协同作用,可以大大提高铜丝自身的耐腐蚀性能,同时也提高了铜丝的机械强度。
(2)本发明的改性方法工艺简单,适于大规模工业化运用,实用性强。
具体实施方式
下面结合具体实施例对发明的技术方案进行详细说明。
实施例1
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、3.8wt%的镓、1.2wt%的磷钨酸钾、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,引杆速度600mm/min,引杆直径为25mm,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火,退火温度为350℃,退火时间为50min;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯,其中钯的纯度要求大于99.999%;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
对比例1
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量3.8wt%的镓、1.2wt%的磷钨酸钾、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,引杆速度600mm/min,引杆直径为25mm,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火,退火温度为350℃,退火时间为50min;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯,其中钯的纯度要求大于99.999%;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
对比例2
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、1.2wt%的磷钨酸钾、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,引杆速度600mm/min,引杆直径为25mm,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火,退火温度为350℃,退火时间为50min;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯,其中钯的纯度要求大于99.999%;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
对比例3
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、3.8wt%的镓、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,引杆速度600mm/min,引杆直径为25mm,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火,退火温度为350℃,退火时间为50min;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯,其中钯的纯度要求大于99.999%;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
对比例4
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、3.8wt%的镓、1.2wt%的磷钨酸钾置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,引杆速度600mm/min,引杆直径为25mm,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火,退火温度为350℃,退火时间为50min;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯,其中钯的纯度要求大于99.999%;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
将通过实施例1和对比例1-4的改性方法制得的镀钯合金铜丝依据国家标准或行业标准的方法分别进行耐腐蚀性能(于温度25℃、湿度70%的环境下放置120h后测试)以及盐酸、多硫化物测试这两项性能测试,所得的测试结果见表1。
表1
氧化层厚度(nm) | 盐酸、多硫化物测试 | |
实施例1 | 6.3 | 无漏铜、无黑斑 |
对比例1 | 11.5 | 漏铜、黑斑 |
对比例2 | 10.9 | 漏铜、黑斑 |
对比例3 | 12.8 | 漏铜、黑斑 |
对比例4 | 10.6 | 漏铜、黑斑 |
本发明所涉及的适用于铜丝的耐腐蚀改性方法,先从原料铜中提取高纯铜,清洗、烘干后与镍、镓、磷钨酸钾、纳米氮化钽共同置于熔炼装置中熔化,经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,随后采用连续挤压机组生产合金铜带坯料,随后经粗拔、镀钯、精拔得到镀钯合金铜丝。利用该方法制备而成的镀钯合金铜丝具有良好的耐腐蚀性能,并且成本较低,能够满足行业的要求,具有良好的应用前景。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (5)
1.一种适用于铜丝的耐腐蚀改性方法,其特征在于,包括以下步骤:
(1)从原料铜中提取纯度大于99.999%的高纯铜,清洗、烘干后备用;
(2)将高纯铜以及占高纯铜质量5.5wt%的镍、3.8wt%的镓、1.2wt%的磷钨酸钾、0.5wt%的纳米氮化钽置于熔炼装置中熔化,采用木炭及石墨鳞片覆盖铜液表面保证熔化时的真空状态,并经在线除气、脱氧、搅拌,用牵引机组离合式真空上引无氧合金铜杆,随后采用连续挤压机组生产合金铜带坯料;
(3)将合金铜带坯料进行粗拔以制得直径为2mm的合金铜丝并退火;
(4)将退火后的按重量百分比计97.5wt%的合金铜丝作为铜芯,在所述铜芯的表面上电镀2.5wt%的纯钯;
(5)将完成步骤(4)的电镀有纯钯保护层的合金铜丝,精拔成直径为0.25mm的镀钯合金铜丝。
2.根据权利要求1所述的适用于铜丝的耐腐蚀改性方法,其特征在于:所述步骤(2)中,引杆速度550~650mm/min,引杆直径为25mm。
3.根据权利要求1所述的适用于铜丝的耐腐蚀改性方法,其特征在于:所述步骤(3)中,退火温度为350℃,退火时间为50min。
4.根据权利要求1所述的适用于铜丝的耐腐蚀改性方法,其特征在于:所述步骤(4)中,电镀用钯的纯度要求大于99.999%。
5.权利要求1~4任一项所述的改性方法所制得的镀钯合金铜丝在集成电路中的应用。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710863513.9A CN107653385B (zh) | 2017-09-22 | 2017-09-22 | 一种适用于铜丝的耐腐蚀改性方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710863513.9A CN107653385B (zh) | 2017-09-22 | 2017-09-22 | 一种适用于铜丝的耐腐蚀改性方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107653385A true CN107653385A (zh) | 2018-02-02 |
CN107653385B CN107653385B (zh) | 2019-04-12 |
Family
ID=61129841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710863513.9A Active CN107653385B (zh) | 2017-09-22 | 2017-09-22 | 一种适用于铜丝的耐腐蚀改性方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107653385B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193552A (ja) * | 2002-10-17 | 2004-07-08 | Mitsubishi Materials Corp | 半導体装置配線シード層形成用銅合金スパッタリングターゲット |
CN1856588A (zh) * | 2003-09-19 | 2006-11-01 | 住友金属工业株式会社 | 铜合金及其制造方法 |
-
2017
- 2017-09-22 CN CN201710863513.9A patent/CN107653385B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193552A (ja) * | 2002-10-17 | 2004-07-08 | Mitsubishi Materials Corp | 半導体装置配線シード層形成用銅合金スパッタリングターゲット |
CN1856588A (zh) * | 2003-09-19 | 2006-11-01 | 住友金属工业株式会社 | 铜合金及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107653385B (zh) | 2019-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102703754B (zh) | 一种Cu-Ni-Si基合金及其制备方法 | |
CN102246248B (zh) | 经涂层的磁性合金材料及其制备方法 | |
CN104946936A (zh) | 一种架空导线用高导电率稀土硬铝单丝材料 | |
CN106636734A (zh) | 高强度、高导电、高抗应力松弛铜合金弹性材料及其制备方法 | |
CN105838929B (zh) | 一种稀土铝合金导线及其制造方法 | |
CN103352137B (zh) | 用于电力开关弹簧触头的高强高导铜合金及其制备方法 | |
CN115652132B (zh) | 铜合金材料及其应用和制备方法 | |
CN103555991A (zh) | 一种无铅环保铜基合金管及其制造方法 | |
CN103074515A (zh) | 一种新型高导电易切削硒铜合金材料及其制备方法 | |
CN105177395A (zh) | 一种镍铜合金的制造工艺 | |
CN104911408A (zh) | 一种硬铝导线单丝及其制备方法 | |
CN101225486A (zh) | 一种铜基原位复合材料及其制备方法 | |
CN104946925A (zh) | 一种母线槽用铜铝合金材料的处理工艺 | |
CN102383002A (zh) | 电缆屏蔽用铜基合金 | |
CN107653385B (zh) | 一种适用于铜丝的耐腐蚀改性方法 | |
CN104561638A (zh) | 一种Al2O3弥散强化铜基复合材料的制备方法 | |
CN111599783B (zh) | 一种利用银铂镀层的银铂键合丝及其制备工艺 | |
CN112271017A (zh) | 一种镍合金铜线及其制备方法 | |
KR20210134831A (ko) | 스테인리스 강재, 구성 부재, 셀 및 연료 전지 스택 | |
CN102306558A (zh) | 一种低压电器用铜合金电接触材料及其制备方法 | |
JPS6046340A (ja) | リ−ドフレ−ム用銅合金 | |
TW201100564A (en) | Lead free copper zinc alloy | |
CN107644717B (zh) | 一种抗氧化键合铜丝的制备方法及应用 | |
CN108070736A (zh) | 一种海洋工程用高强度纳米级碳化硅铜基合金新材料 | |
CN103343259A (zh) | 高温高耐压铜合金导电材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190307 Address after: 215500 Haiyang Road, Haiyu Town, Changshu City, Jiangsu Province Applicant after: Jiangsu Luxin New Energy Technology Co., Ltd. Address before: 528000 Foshan, Guangdong, Foshan, Chancheng, 13 South China Road, Foshan, National Torch Innovation and entrepreneurship Park, sixteen block, block C. Applicant before: Foshan Huichuang Zhengyuan new Mstar Technology Ltd |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |