CN107634801A - Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof - Google Patents
Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof Download PDFInfo
- Publication number
- CN107634801A CN107634801A CN201710614113.4A CN201710614113A CN107634801A CN 107634801 A CN107634801 A CN 107634801A CN 201710614113 A CN201710614113 A CN 201710614113A CN 107634801 A CN107634801 A CN 107634801A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- oam
- waveguide
- horizontal
- loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 56
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The present invention relates to a kind of horizontal SAM and the adjustable photon transmitting/reception chips of OAM, including the silicon nitride micro-loop waveguide integrated on piece, and the silicon nitride taper Coupled Passive Waveguide Structure for being arranged on silicon nitride micro-loop waveguide both sides integrated on piece, the evanescent wave area on the inside of the silicon nitride micro-loop waveguide are provided with angular grating array.
Description
Technical field
It is adjustable more particularly, to a kind of horizontal SAM and OAM the present invention relates to optic communication or quantum information process field
Photon transmitting/reception chip and preparation method thereof.
Background technology
Light carries intrinsic spin angular momentum and orbital angular momentum, and they are determined by the polarization and spatial degrees of freedom of light respectively.
Photon trajectory angular momentum（OAM）Due to its infinite number of eigen mode, information capacity can be infinitely expanded in theory.Therefore photon
Orbital angular momentum is being widely used in the application such as optic communication and quantum information processing.And spin of photon angular momentum is also being measured
Son tangles, is widely used in the palarization multiplexing of light.In fact, the interaction of the spin angular momentaum and orbital angular momentum of photon
（SOI）It is found on non-uniform dielectric, light refraction/reflecting interface, and is explained by contemporary optics theory.SOI
Phenomenon has very big new application potentiality, such as the micro- manipulation of optics, super-resolution imaging, beam shaping, beam splitting etc..
On the other hand, spin of photon angular momentum SAM is according to its rotary shaft and the relation of direction of beam propagation（It is vertical or flat
OK）It is divided into horizontal spin angular momentaum and longitudinal spin angular momentaum.It is horizontal compared to longitudinal spin angular momentaum of generally existing in nature
Occurred mainly in spin angular momentaum in nonuniform illumination, for example, surface plasmons, the evanescent wave of waveguide/non-waveguide mode
In area and strong-focusing light beam.Carry the light field of horizontal spin angular momentaum have in nanophotonics, bio-sensing it is very more
New opplication.Especially, horizontal spin angular momentaum causes strong SOI phenomenons on the border of waveguide mode in evanescent wave, or by
The referred to as Quantum Spin Hall effect of light.And cause horizontal spin-directionality coupling on the interface of light, namely break on interface
The excitation mode directionality participated in by evanescent wave.This characteristic of horizontal spin angular momentaum is in optical diode, chiral from optically-active
Very more function elements has been developed in the applications such as network, quantum information processing.
Therefore, while carrying out manipulation to the horizontal spin angular momentaum and orbital angular momentum of photon will be in whole angular momentum domain
In show more multifarious application prospect.And new function device will be brought, such as the photon state in SAM-OAM spaces
Coding/decoding.
The content of the invention
The invention provides a kind of horizontal SAM and the adjustable photon transmitting/reception chips of OAM, the chip can be to photon
Horizontal spin angular momentaum, orbital angular momentum is adjusted, therefore possesses very broad application prospect.
To realize above goal of the invention, the technical scheme of use is：
Horizontal SAM and the silicon nitride micro-loop waveguide integrated in the adjustable photon transmittings of OAM/reception chip, including piece, and collect on piece
Into the silicon nitride taper Coupled Passive Waveguide Structure for being arranged on silicon nitride micro-loop waveguide side, on the inside of the silicon nitride micro-loop waveguide
Evanescent wave area is provided with angular grating array.
In such scheme, when chip is as transmitter, the refractive index characteristic of silicon nitride micro-loop waveguide causes light field in waveguide
Radial component intensity and azimuth component intensity in evanescent wave area can compare, and produce horizontal spin angular momentaum, therefore pass through change
The size of silicon nitride micro-loop waveguide can regulate and control two electric field component sizes in waveguide evanescent wave area, and then regulate and control laterally certainly
The purpose of angular momentum.And the waveguide of silicon nitride micro-loop is used for the topological charge that wavelength selection and orbital angular momentum are carried out to emission spectrum
Regulation and control, and then regulate and control the purpose of orbital angular momentum, silicon nitride micro-loop is then made by the angular grating array in evanescent wave area
Pattern in waveguide, into free space, while carries horizontal spin angular momentaum and orbital angular momentum by Vertical Launch.
When chip is as receiver, only wavelength meets the condition of resonance of silicon nitride micro-loop waveguide and carries corresponding OAM
The incident beam of exponent number can be coupled into silicon nitride micro-loop waveguide, and special by the unidirectional couplings of horizontal spin angular momentaum
Property, the light beam for carrying left-hand/right-hand two kinds of SAM respectively is output to two phases of left/right of silicon nitride taper Coupled Passive Waveguide Structure
Anti- direction, realize that the selectivity of OAM-SAM two spaces receives.
Meanwhile present invention also offers the preparation method of more than one chips, its specific content are as follows：
The preparation method of more than one transmitting/reception chips, comprises the following steps：
S1. the growing silicon oxide layer on crystal orientation silicon substrate, then by chemical vapor process on silicon oxide layer deposited silicon nitride
Layer；
S2. spin coating photoresist, exposure, heat backflow, plasma etch step are carried out on silicon nitride layer, prepares silicon nitride micro-loop
Waveguide, silicon nitride taper Coupled Passive Waveguide Structure and angular grating array.
Compared with prior art, the beneficial effects of the invention are as follows：
Present invention incorporates the advantages of silicon substrate integrated photon orbital angular momentum ballistic device and to horizontal spin angle in evanescent wave area
The further investigation of momentum, provide a kind of horizontal spin angular momentaum and the adjustable photon transmitting/reception chip of orbital angular momentum.At this
In individual scheme, silicon nitride micro-loop waveguide is designed to have horizontal spin angular momentaum interior adjustable in a big way, and track angular motion
Amount changes topological charge number by changing input wavelength, then determines to be transmitted into oneself in free space by the excitation direction of input light
Angular momentum and orbital angular momentum direction.Three kinds of situations concur, and light beam caused by the final device can carry simultaneously
Adjustable laterally spin and orbital angular momentum.And when being used as receiving device, the OAM light beams incided on device are passed through into evanescent wave
Laterally spin carries out selectively coupling to two different directions, realizes selectively coupled while OAM-SAM.The design has
Coupling selection is than high, the advantages that caused SAM-OAM purity is high, and using the processing technology in the present invention, and the chip can be
Extensive flow production, has larger application prospect on general semiconductor microactuator processing platform.
Brief description of the drawings
Fig. 1 is the structural representation of chip.
Fig. 2（a）、（b）、（c）For the preparation flow figure of chip.
Embodiment
Accompanying drawing being given for example only property explanation, it is impossible to be interpreted as the limitation to this patent；
Below in conjunction with drawings and examples, the present invention is further elaborated.
Embodiment 1
As shown in figure 1, the adjustable photon transmitting/reception chip bag of horizontal spin angular momentaum provided by the invention, orbital angular momentum
Include the silicon nitride micro-loop waveguide 1 integrated on piece, and the silicon nitride taper for being arranged on the side of silicon nitride micro-loop waveguide 1 integrated on piece
Coupled Passive Waveguide Structure 3, the evanescent wave area of the inner side of silicon nitride micro-loop waveguide 1 are provided with angular grating array 2.
In such scheme, when chip is as transmitter, the refractive index characteristic of silicon nitride micro-loop waveguide 1 causes light field in waveguide
Radial component intensity and azimuth component intensity in evanescent wave area can compare, and produce horizontal spin angular momentaum, therefore pass through change
The size of silicon nitride micro-loop waveguide 1 can regulate and control two electric field component sizes in waveguide evanescent wave area, and then regulate and control laterally
The purpose of spin angular momentaum.And silicon nitride micro-loop waveguide 1 is used to carry out wavelength selection to emission spectrum and orbital angular momentum is opened up
Lotus regulation and control are flutterred, and then regulate and control the purpose of orbital angular momentum, silicon nitride is then made by the angular grating array 2 in evanescent wave area
Pattern in micro-loop waveguide 1, into free space, and carries horizontal spin angular momentaum and orbital angular momentum by Vertical Launch.
When chip is as receiver, only wavelength meets the condition of resonance of silicon nitride micro-loop waveguide 1 and carries corresponding OAM
The incident beam of exponent number can be coupled into silicon nitride micro-loop waveguide 1, and passes through the unidirectional couplings of horizontal spin angular momentaum
Characteristic, the light beam for carrying two kinds of SAM of left-hand/right-hand respectively is output to the left/right two of silicon nitride taper Coupled Passive Waveguide Structure 3
Opposite direction, realize that the selectivity of OAM-SAM two spaces receives.
In specific implementation process, the silicon nitride micro-loop waveguide 1, the refraction of silicon nitride taper Coupled Passive Waveguide Structure 3
Rate is 2.0.The silicon nitride micro-loop waveguide 1, the setting of silicon nitride taper Coupled Passive Waveguide Structure 3 are highly 0.6 micron, and it is nitrogenized
The width range of silicon micro-loop waveguide 1 is 0.8-1.6 microns.The radius of the silicon nitride micro-loop waveguide 1 is 80 microns, with silicon nitride
At intervals of 200 nanometers, the height and width of outer layer SU8 waveguides are 3.5 microns for the coupling of taper Coupled Passive Waveguide Structure.
In such scheme, the angular grating array 2 includes the angular grating of 517 periodic arrangements.It is described angular
The height and width of grating are 100 nanometers.
In specific implementation process, the silicon nitride taper Coupled Passive Waveguide Structure 3 includes straight wave guide 31 and is arranged on straight
The tapered transmission line 32 being connected with straight wave guide at the both ends of waveguide 31, the width that tapered transmission line 32 is carefully located are 140 nanometers, tapered transmission line 32
Length be 350 microns.The outer layer of the tapered transmission line 32 is provided with SU8 straight wave guides 03, and the height of SU8 straight wave guides 03 is 3.5
Micron, width are 3.5 microns.
Embodiment 2
Present embodiments provide a kind of preparation method of the chip of embodiment 1, such as Fig. 2（a）、（b）、（c）It is shown, its specific side
Case is as follows：
S1. 5 microns thick of silicon oxide layer 01 is grown on 400 microns thick of crystal orientation silicon substrate 02, then by chemical gaseous phase side
Method deposits the silicon nitride layer 00 of 600 nanometer thickness on silicon oxide layer 01；
S2. spin coating photoresist, exposure, heat backflow, plasma etch step are carried out on silicon nitride layer 00, it is micro- to prepare silicon nitride
Ring waveguide 1, straight wave guide 31, tapered transmission line 32 and angular grating array 2.
S3. the SU8 straight wave guides structure 03 of the outer layer of tapered transmission line 32 is obtained by alignment and graphical transfer；
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not to this hair
The restriction of bright embodiment.For those of ordinary skill in the field, can also do on the basis of the above description
Go out other various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.It is all in the present invention
Spirit and principle within all any modification, equivalent and improvement made etc., should be included in the guarantor of the claims in the present invention
Within the scope of shield.
Claims (9)
1. horizontal SAM and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：Including the silicon nitride micro-loop integrated on piece
The silicon nitride taper Coupled Passive Waveguide Structure for being arranged on silicon nitride micro-loop waveguide side integrated in waveguide, and piece, the silicon nitride
Evanescent wave area on the inside of micro-loop waveguide is provided with angular grating array.
2. horizontal SAM according to claim 1 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
The waveguide of silicon nitride micro-loop, the refractive index of silicon nitride taper Coupled Passive Waveguide Structure are 2.0.
3. horizontal SAM according to claim 1 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
The waveguide of silicon nitride micro-loop, the setting of silicon nitride taper Coupled Passive Waveguide Structure are highly 0.6 micron, the width of silicon nitride micro-loop waveguide
Scope is 0.8-1.6 microns.
4. horizontal SAM according to claim 1 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
The radius of silicon nitride micro-loop waveguide is 80 microns, and the coupling with silicon nitride taper Coupled Passive Waveguide Structure is at intervals of 200 nanometers.
5. horizontal SAM according to claim 1 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
Angular grating array includes the angular grating of several periodic arrangements.
6. horizontal SAM according to claim 5 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
The height and width of angular grating are 100 nanometers.
7. horizontal SAM according to claim 1 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
Silicon nitride taper Coupled Passive Waveguide Structure includes straight wave guide and is arranged on the tapered transmission line being connected with straight wave guide at straight wave guide both ends, cone
The width that shape waveguide is carefully located is 140 nanometers, and the length of tapered transmission line is 350 microns.
8. horizontal SAM according to claim 7 and the adjustable photon transmitting/reception chips of OAM, it is characterised in that：It is described
The outer layer of tapered transmission line is provided with SU8 straight wave guides, and the height of SU8 straight wave guides is 3.5 microns, and width is 3.5 microns.
A kind of 9. preparation method according to any one of the claim 1 ~ 8 transmitting/reception chip, it is characterised in that：Including with
Lower step：
S1. the growing silicon oxide layer on crystal orientation silicon substrate, then by chemical vapor process on silicon oxide layer deposited silicon nitride
Layer；
S2. spin coating photoresist, exposure, heat backflow, plasma etch step are carried out on silicon nitride layer, prepares silicon nitride micro-loop
Waveguide, silicon nitride taper Coupled Passive Waveguide Structure and angular grating array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710614113.4A CN107634801A (en) | 2017-07-25 | 2017-07-25 | Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710614113.4A CN107634801A (en) | 2017-07-25 | 2017-07-25 | Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107634801A true CN107634801A (en) | 2018-01-26 |
Family
ID=61099545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710614113.4A Pending CN107634801A (en) | 2017-07-25 | 2017-07-25 | Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107634801A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111399117A (en) * | 2020-04-30 | 2020-07-10 | 中国科学院半导体研究所 | Hybrid integrated silicon nitride micro-ring resonant cavity and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325313A (en) * | 2008-07-15 | 2008-12-17 | 浙江大学 | High speed modulation semiconductor laser |
| WO2013179023A1 (en) * | 2012-06-01 | 2013-12-05 | The University Of Bristol | Orbital angular momentum |
-
2017
- 2017-07-25 CN CN201710614113.4A patent/CN107634801A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325313A (en) * | 2008-07-15 | 2008-12-17 | 浙江大学 | High speed modulation semiconductor laser |
| WO2013179023A1 (en) * | 2012-06-01 | 2013-12-05 | The University Of Bristol | Orbital angular momentum |
Non-Patent Citations (2)
| Title |
|---|
| 余思远: ""涡旋光场的集成光子学操控方法"", 《光学学报》 * |
| 徐延海: ""集成 OAM 光束发射器模式纯度仿真分析"", 《电子测试》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111399117A (en) * | 2020-04-30 | 2020-07-10 | 中国科学院半导体研究所 | Hybrid integrated silicon nitride micro-ring resonant cavity and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109085667A (en) | A kind of super surface achromatism line polarisation lens | |
| Grillet et al. | Nanowire coupling to photonic crystal nanocavities for single photon sources | |
| CN106199836B (en) | A kind of bandwidth tunable filter based on silica-based waveguides grating | |
| CN106537192B (en) | Multiple axial gradient refractive index photon couplings | |
| CN105629364B (en) | A kind of super surface device of wavelength selective | |
| CN105353463B (en) | A kind of device and method detected and receive vortex light field | |
| WO2014065952A1 (en) | Optical fiber source and repeaters using tapered core waveguides | |
| Sturmberg et al. | Nanowire array photovoltaics: Radial disorder versus design for optimal efficiency | |
| US8509581B2 (en) | Optical fibers with tubular optical cores | |
| CN101995609B (en) | Dispersion-decreasing ladder type waveguide grating coupler of silicon-on-insulator and manufacturing method thereof | |
| CN102981205B (en) | Sub-wavelength rectangular ring array quarter wave plate and fabrication method thereof | |
| Yu et al. | Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration | |
| CN108693602A (en) | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof | |
| CN109324372B (en) | Silicon optical waveguide end face coupler | |
| CN103605189B (en) | A kind of surface Plasmon optical waveguide filter | |
| Grosjean et al. | Optical horn antennas for efficiently transferring photons from a quantum emitter to a single-mode optical fiber | |
| Elsaid et al. | Broadband directional rhombic nanoantenna for optical wireless communications systems | |
| CN107634801A (en) | Horizontal SAM and the adjustable photon transmitting/reception chips of OAM and preparation method thereof | |
| US20150277065A1 (en) | Optical fiber source and repeaters using tapered core waveguides | |
| US20090142016A1 (en) | Plasmonic optics for plasmonic circuits | |
| Wang et al. | The development and progression of micro-nano Optics | |
| Ye et al. | On-chip orbital angular momentum sorting with a surface plasmon polariton lens | |
| CN109752798A (en) | Optical nano antenna detector and preparation method thereof based on coaxial double wave guiding fiber | |
| CN108051885A (en) | Radially and angularly polarize adjustable column vector OAM transmitting chips and preparation method thereof | |
| CN114545553B (en) | Optical topology duplexer based on coupling topology waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180126 |
|
| RJ01 | Rejection of invention patent application after publication |