CN107623249A - A kind of tunable wave length module - Google Patents
A kind of tunable wave length module Download PDFInfo
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- CN107623249A CN107623249A CN201710923332.0A CN201710923332A CN107623249A CN 107623249 A CN107623249 A CN 107623249A CN 201710923332 A CN201710923332 A CN 201710923332A CN 107623249 A CN107623249 A CN 107623249A
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Abstract
The present invention relates to tunable building block technique field, there is provided a kind of tunable wave length module.Including shell 1, ROSA and TOSA, Wavelength tunable module also includes PCB main board 4 and PCB daughter boards 5, microcontroller, APD booster circuits, laser driving, golden finger, laser diode current chip and power supply chip are provided with PCB main board 4, laser diode current chip uses both arms differential modulation；The data and supply port that interface and the ROSA and TOSA are provided with PCB main board 4 are connected；PCB daughter boards 5 include TEC drive circuits and voltage conversion chip.The present invention and realizes module small-sized encapsulated requirement by using the design of double-layer circuit board by way of optimizing and being laid out, and evades expensive development cost and longer R＆D cycle caused by special exploitation asic chip with this.
Description
【Technical field】
The present invention relates to tunable building block technique field, more particularly to a kind of tunable wave length module.
【Background technology】
At present, (Dense Wavelength Division Multiplexing, are abbreviated as dense wave division multipurpose：DWDM)
In system, wavelength species is various, and this just needs the optical module of various different wave lengths as light source.Can in order to ensure communication system
By property and stability, every optical module is required for the module backup of at least one phase co-wavelength, this results in resource utilization it is low,
The problems such as module management is complicated, optical network node very flexible and network construction cost is high.
Since 21 century, due to the explosive growth of internet service, the world increasingly increases the demand of network bandwidth.Make
Two obvious trend are presented in the Networks of Fiber Communications development for carrying and transmitting for information；One of them is exactly development trend, tool
The optical-fiber network for having reconfigurable function turns into the common recognition of industry.In a network, the optical add/drop multiplexer of restructural is passed through
(Reconfigurable Optical Add-Drop Multiplexer, are abbreviated as：ROADM), any section in optical-fiber network
Point can load/download any wavelength, and this avoid the trunking scheme using optical-electrical-optical to carry out light exchange, while to use
Family can be in a network either port any wavelength is configured, provide many facilities for network operation.Therefore, can
At the port for reconstructing light networking, wavelength can be realized using tunable module, greatlys save network operation cost.
With the development of semiconductor laser, tunable semiconductor laser and corresponding adjustable module meet the tendency of and
It is raw.(Distributed Bragg Reflector, are abbreviated as single-chip integration Distributed Bragg Reflection：DBR) type tunable half
Conductor laser relies on its faster wavelength switch speed and wider wavelength tuning range, is considered as light net of future generation always
One of Primary Component of network.It can provide automatic wavelength configuration, wavelength convert and wavelength for reconfigurable optical network, from
And greatly improve flexibility and the bandwidth availability ratio of network.
Existing adjustable module realizes small-sized encapsulated, traditional method be specially developed for its control unit it is a small
(Application Specific Integrated Circuit, are abbreviated as type application specific integrated circuit：ASIC) chip, should
The functions such as integrated chip MCU, Driver, laser driving 4-3, APD booster circuit 4-2, meet that module minimizes with this
Encapsulation requires.In summary, existing tunable module complex designing, construction cycle length, cost are high, not suitable modules batch
Production.
【The content of the invention】
The technical problem to be solved in the present invention is existing tunable module complex designing, and construction cycle length, cost are high, and
Inapplicable module batch production.
The present invention adopts the following technical scheme that：
On the one hand, the invention provides a kind of Wavelength tunable module, including shell 1, ROSA2 and TOSA3, Wavelength tunable mould
Block also includes PCB main board 4 and PCB daughter boards 5, specifically：
Be provided with PCB main board 4 microcontroller 4-1, APD booster circuit 4-2, laser driving 4-3, golden finger 4-4, swash
Light device electric current chip 4-5 and power supply chip 4-6；
The data and supply port that interface and the ROSA2 and TOSA3 are provided with PCB main board 4 are connected；
PCB daughter boards 5 include TEC drive circuits 5-1 and voltage conversion chip 5-4；
PCB main board 4 completes supplying channels, and signalling channel between the two with PCB daughter boards 5 by contact pin or soft arranging wire
Corresponding connection.
Preferably, the setting of each component specifically includes on PCB main board 4：
Microcontroller 4-1 and APD booster circuit 4-2 is arranged at the front of PCB main board 4；
Laser driving 4-3, laser diode current chip 4-5, power supply chip 4-6 are arranged at the reverse side of PCB main board 4.
Preferably, the data and supply port phase of interface and the ROSA2 and TOSA3 are provided with the PCB main board 4
Even, specifically include：
It is used to complete the port layout of signal transmission in the front of PCB main board 4 with TOSA on PCB main board 4；
It is used for reverse side of the port layout in PCB main board 4 that power supply connection is completed with TOSA on PCB main board 4.
Preferably, the setting of each component specifically includes on PCB daughter boards 5：
TEC drive circuits 5-1 is arranged on the reverse side of PCB daughter boards 5, also, the power supply circuit of laser driving is arranged on institute
State on the front of PCB daughter boards 5.
Preferably, PCB main board 4 with the needle connector 4-8 of at least one 2 is respectively arranged with PCB daughter boards 5 and 1 spininess connects
Device 4-9 is attached；Wherein, the power supply power supply that the 2 needle connector 4-8 is used to complete on PCB daughter boards 5, the spininess connection
Device 4-9 is used for the transmission for completing the data-signal between the microcontroller 4-1 in TEC drive circuits 5-1 and PCB main board 4.
Preferably, PCB main board 4 and PCB daughter boards 5 are L-shaped, and long-armed end face is used to connect ROSA wherein in L-type PCB main board 4,
Wherein the galianconism surface of L-type PCB main board 4 is used to connect TOSA；
Wherein, multi-pin connector 4-9 is arranged on the long-armed side of L-type PCB main board 4, and the 2 needle connector 4-8 is arranged on L
The short leg end surface of type PCB main board 4；The power supply chip 4-6 and APD boost chips 4-3 is arranged on the long-armed end face of L-type PCB main board 4
Side, microcontroller 4-1 and laser the driving 4-3 are positioned close to galianconism bottom side.
Preferably, when the laser is specially sampled grating distributed bragg reflector lasers, laser diode current core
Piece 4-5 specifically uses MAX5112 chips, and the ceramic segment of TOSA shells is arranged at flip chip bonding mode；Wherein,
MAX5112 chips are encapsulated using FBG, and the black ceramic part of TOSA shells is designed with electrical connection, directly by MAX5112 chips
It is attached with TOSA laser pin.
Preferably, the microcontroller 4-1 is specially Renesas 51116ADLF；The APD booster circuits 4-2 is specific
Realized for 508LGGP chips；The laser driving 4-3 is specially that GN2044S chips are realized；The TEC driving chips 5-1 tools
Body is ADN8833.
Preferably, TX_OUTN, TX_OUNP of the GN2044S differential signal not by coupled capacitor by single-stage radio frequency
Model is changed into P, N level that twin-stage signal is overlapped MZM modulator 4-10 in the DC component with VBAIS_N, VBAIS_P.
Preferably, the shell 1 is SFP, SFP+ or QSFP.
Compared with prior art, the beneficial effects of the present invention are：
The present invention realizes module small-sized encapsulated by using the design of double-layer circuit board by way of optimizing and being laid out
It is required that expensive development cost and longer R＆D cycle caused by asic chip are specially developed to evade with this.
【Brief description of the drawings】
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of design frame chart of tunable wave length module provided in an embodiment of the present invention；
Fig. 2 is a kind of structural front view for tunable wave length module that embodiment of the present invention provides；
Fig. 3 is a kind of PCB main board top view for tunable wave length module that embodiment of the present invention provides；
Fig. 4 is a kind of PCB main board upward view for tunable wave length module that embodiment of the present invention provides；
Fig. 5 is a kind of PCB daughter board upward views for tunable wave length module that embodiment of the present invention provides；
Fig. 6 is a kind of PCB daughter board top views for tunable wave length module that embodiment of the present invention provides；
Fig. 7 is a kind of temperature control chip A8033 quiescent operation circuit diagrams that embodiment of the present invention provides；
Fig. 8 is a kind of wavelength locking circuit design frame chart that embodiment of the present invention provides；
Fig. 9 is a kind of bias circuit block diagram that embodiment of the present invention provides；
Figure 10 is a kind of APD booster circuits design frame chart that embodiment of the present invention provides；
Figure 11 is a kind of boost chip peripheral circuit schematic diagram that embodiment of the present invention provides；
Figure 12 is a kind of single-ended EA drive circuit schematic diagrams that embodiment of the present invention provides；
Figure 13 is a kind of both arms MAM drive circuit schematic diagrams that invention embodiment provides；
Digital code implication in accompanying drawing is as follows：
1st, shell；2、ROSA；3、TOSA；4th, PCB main board；4-1, microcontroller；4-2, APD control circuit；4-3, laser
Device drives；4-4, golden finger；4-5, laser diode current chip；4-6, power supply chip；4-7, amplifier；4-8,2 needle connectors；4-9、
Multi-pin connector；4-10, MZ control circuit；5th, PCB daughter boards；5-1, TEC driving chip；5-2、AD；5-3, amplifier；5-4, laser
Device TEC drive circuits；5-5, amplifier.
【Embodiment】
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In the description of the invention, term " interior ", " outer ", " longitudinal direction ", " transverse direction ", " on ", " under ", " top ", " bottom " etc. refer to
The orientation or position relationship shown be based on orientation shown in the drawings or position relationship, be for only for ease of the description present invention rather than
It is required that the present invention must be with specific azimuth configuration and operation, therefore it is not construed as limitation of the present invention.
In addition, as long as technical characteristic involved in each embodiment of invention described below is each other not
Conflict can is formed to be mutually combined.
The present invention relates to a kind of design of tunable wave length module, the tunable wave length integrated module of optical transceiver, due to PCB
The limitation of area itself, one piece of pcb board are insufficient for functions of modules requirement, and hardware components circuit is divided into 2 pcb boards, its
In, big plate is defined as PCB main board 4, and platelet is defined as PCB daughter boards 5.PCB main board 4 mainly includes golden finger 4-4, laser
Drive 4-3, APD booster circuits 4-2, MCU4-1, MZ modulator 4-10, PCB daughter board 5 mainly include high-precision AD 5-2, TEC and
Electric current drives 5-1.2 pieces of PCB are connected by contact pin connector.Its specific hardware frame figure is as shown in Figure 1：
Module of the present invention is in addition to two pieces of PCB, also comprising a ballistic device (Transmitter Optical
Subassembly, it is abbreviated as：TOSA) and a receiving device (Receiver Optical Subassembly, are abbreviated as：
ROSA).Its corresponding main control chip is distributed on PCB, passes through the golden finger 4-4 parts of cabling and ballistic device and receiving device
It is connected, its specific structure chart is as shown in Figure 2：
1 piece of Renesas 51116ADLF precision analog microcontroller is additionally used in the present invention, completing the control of module needs
Ask.Its microcontroller uses 32 RISC Architectures, has programmable 41.78MHz PLL, built-in accurate piece internal oscillator.Should
Microcontroller carries E2Data Flash, 8 passage DAC, 12 passage ADC, 8KB SRAM, 12Pin reusable GPIO.Carry two
It can be configured to the I2C buses of main frame or slave, SPI, and multiple FPGA input and output pins.It is relative with its other party
Case, microcontroller 4-1 have small power consumption, the small feature of size, are advantageous to module miniaturization layout.
The specific band microcontroller encapsulates for 64PIN WFLGA, size 5*5mm, and general 64PIN microcontroller
4-1 package dimension is 9*9mm, its power consumption also than single microcontroller (such as：OKI4195 chips) high 2 times or so.
In addition, in general SFP+ modules are to provide bias voltage control to EA modulators, usual EA lasers are single-ended drive.
Microcontroller by control control laser arranges value so as to control the modulation electric current of TOSA light extractions, equilibrium, preemphasis,
Crossing is equivalent.TOSA EA voltages are controlled to realize transmitting terminal electric light path by peripheral circuit.And institute in the present invention
The both arms mach zhender electrooptic modulator (Mach-Zehnder Modulator, be abbreviated as MZM) that the module being related to uses
Relative to EA modulators, MZM modulator 4-10 has higher modulation bandwidth and a more preferable chirp, and both arms
MZM modulation ratio single armeds MZM modulation has higher modulation amplitude, can improve the radiofrequency characteristicses of TOSA devices.Therefore, institute of the present invention
The modulation circuit being related to specially is designed according to both arms MZM modulator 4-10.Next, then illustrated how with specific embodiment
Realize technical solution of the present invention.
Embodiment 1:
As shown in figs 1 to 6, the embodiment of the present invention 1 provides a kind of Wavelength tunable module, including shell 1, ROSA2 and
TOSA3, Wavelength tunable module also include PCB main board 4 and PCB daughter boards 5, specifically：
Be provided with PCB main board 4 microcontroller 4-1, APD booster circuit 4-2, laser driving 4-3, golden finger 4-4, swash
Light device electric current chip 4-5 and power supply chip 4-6；
The data and supply port that interface and the ROSA2 and TOSA3 are provided with PCB main board 4 are connected；
Such as：The ROSA can be APD-TIA structures.TIA is built in inside ROSA, APD (being built in ROSA) speed
Rate is 10G/bs.
PCB daughter boards 5 include TEC drive circuits 5-1 and voltage conversion chip 5-4；
PCB main board 4 completes supplying channels, and signalling channel between the two with PCB daughter boards 5 by contact pin or soft arranging wire
Corresponding connection.
Wherein, the shell 1 is SFP, SFP+ or QSFP, can also be in addition it is other do not enumerate into it is similar
Encapsulating structure.
As shown in figure 1, wherein, laser driving 4-3 is connected in golden finger 4-4 and MZ control circuit 4-10 (preferred schemes
It is middle to increase the device matched somebody with somebody) between and for TOSA provide laser drive signal；And the microcontroller 4-1 connection golden fingers 4-4 is simultaneously
By the high-precision AD in contact pin connector (such as 2 needle connector 4-8 and multi-pin connector 4-9) and daughter board, (it is preferred knot
Structure, corresponding function can be realized by single-chip microcomputer, still, closely set high-precision AD further to improve analog-to-digital conversion standard
Exactness) it is connected with TEC drive circuits, wherein, circuit drives are used for TOSA and provide static working current, and high-precision AD is used to incite somebody to action
The analog signal of back light detector is converted to the data signal that single-chip microcomputer can be read in TOSA；The golden hand of power supply chip 4-6 connections
Refer to 4-4, and operating voltage is provided for each chip on motherboard and daughter board.
The embodiment of the present invention realizes that module is small-sized by using the design of double-layer circuit board by way of optimizing and being laid out
Change encapsulation to require, development cost expensive caused by asic chip and longer research and development week are specially developed to evade with this
Phase.
Each chip, circuit or component in the embodiment of the present invention 1 on PCB main board 4 have a variety of layout type, but
It is to reduce the photoelectricity crosstalk between TOSA, ROSA device, a kind of preferable implementation is present, specifically, microcontroller 4-1
The front of PCB main board 4 is arranged at APD booster circuits 4-2；Laser driving 4-3, laser diode current chip 4-5, power supply chip
4-6 is arranged at the reverse side of PCB main board 4.
In order to reduce the electrical crosstalk in TOSA between signal port and supply port, with reference to the embodiment of the present invention, also exist
One kind extension implementation, wherein, data and the power supply of interface and the ROSA2 and TOSA3 are provided with the PCB main board 4
Port is connected, and specifically includes：
It is used to complete the port layout of signal transmission in the front of PCB main board 4 with TOSA on PCB main board 4；On PCB main board 4
For completing reverse side of the port layout in PCB main board 4 of power supply connection with TOSA.
In implementation process of the embodiment of the present invention, further contemplate in design that laser TEC driving chips is independent
It is placed on daughter board, and on non-controlling TOSA and ROSA mainboard, the hot crosstalk between device can be prevented preferably to radiate.Cause
, a kind of preferable implementation with reference to the embodiment of the present invention also be present in this, wherein, TEC drive circuits 5-1 is arranged on PCB daughter boards 5
On reverse side, also, the power supply circuit of laser driving is arranged on the front of PCB daughter boards 5.
In embodiments of the present invention, the connected mode for PCB main board 4 and PCB daughter boards 5 provides a kind of preferable side
Case, specifically：The needle connector 4-8 of at least one 2 and 1 multi-pin connector 4-9 are respectively arranged with PCB main board 4 and PCB daughter boards 5
It is attached；Wherein, the power supply power supply that the 2 needle connector 4-8 is used to complete on PCB daughter boards 5, the multi-pin connector 4-9
For completing the transmission of the data-signal between the microcontroller 4-1 in TEC drive circuits 5-1 and PCB main board 4, such as have two
Individual port corresponds to mainboard single-chip microcomputer and the I2C communication interfaces of the driving of daughter board electric current, TEC control drivings, and one is to produce clock letter
Number, one is to produce data-signal, and specifically electric current driving communication or TEC control driving communications is posted by single-chip microcomputer by inside
Storage home address is distributed to select.Other eight ports are mostly connectivity port, are not repeated one by one herein.Wherein, 2 pin connects
Meet device 4-8 and 10 needle connectors are fixed in through hole by welding manner.
In embodiments of the present invention, for the shape of PCB main board 4 and PCB daughter boards 5, also provide a kind of optimal
Solution, with reference in figure 5 for L-type PCB daughter boards 5 long-armed and galianconism mark, specifically, PCB main board 4 and PCB daughter boards 5
L-shaped, long-armed end face is used to connect ROSA wherein in L-type PCB main board 4, and the wherein galianconism surface of L-type PCB main board 4 is used to connect
TOSA；
Wherein, multi-pin connector 4-9 is arranged on the long-armed side of L-type PCB main board 4, and the 2 needle connector 4-8 is arranged on L
The short leg end surface of type PCB main board 4；The power supply chip 4-6 and APD boost chips 4-3 is arranged on the long-armed end face of L-type PCB main board 4
Side, microcontroller 4-1 and laser the driving 4-3 are positioned close to galianconism bottom side.This layout multi-pin connector 4-9 and
2 needle connector 4-8 mode, it can also ensure the signalling channel influence for receiving electric transmission channel as small as possible, especially exist
It is related to the transmission situation of different magnitudes of voltage in electric transmission channel.
In addition, it is specially sampled grating distributed bragg reflector lasers (Sampled Grating in the laser
Distributed Bragg Reflector, are abbreviated as：When SGDBR), also for involved by main framework of the embodiment of the present invention
Related chip, there is provided one group of feasible solution by known chip component, specifically：Laser diode current chip 4-5
MAX5112 chips specifically are used, and the ceramic segment of TOSA shells is arranged at flip chip bonding mode；Wherein, MAX5112 chips
Encapsulated using FBG, the black ceramic parts of TOSA shells is designed with electrical connection, directly swashing MAX5112 chips and TOSA
Light device pin is attached.
Combined according to said chip, the microcontroller 4-1 can also be specially Renesas 51116ADLF；The APD
Booster circuit 4-2 is specially that 508LGGP chips are realized；The laser driving 4-3 can also be specially GN2044S chips reality
It is existing；The TEC driving chips 5-1 can also be specially ADN8833.
In combinations thereof, TX_OUTN, TX_OUNP of the GN2044S differential signal will not be single by coupled capacitor
Level radio frequency model is changed into twin-stage signal and is overlapped MZM modulator 4-10's in the DC component with VBAIS_N, VBAIS_P
P, N levels.
Embodiment 2：
After the main framework in elaborating embodiment 1, the embodiment of the present invention each function of being formed from main framework
Hand, illustrates how the embodiment of the present invention ensures the work of tunable module by each function, and further proposes to change accordingly
Enter thinking.
As shown in figure 3, for the mainboard front schematic view of the present invention, mainboard is in " L " types, include a microcontroller 4-1
(Renesas 51116ADLF), amplifier a 4-7, wherein 508LGGP boost chip 4-2, microcontroller 4-1 and fortune
The long side positioned at " L " type is put, boost chip is located at " short sides of L " types.Shown in Fig. 4, it is the back side of mainboard, includes a laser
Drive GN2044S (i.e. 4-3), a power supply chip 4-6, a current mode drive MAX5112 chip (i.e. 4-5), golden finger 4-
4th, 2 needle connector 4-8 and 10 needle connector 4-9.In the design, in order to reduce the photoelectricity crosstalk between TOSA, ROSA device, will control
The 508LGGP chips of APD booster circuits processed and the driving GN2044S of control TOSA devices are being respectively placed in pcb board just, and anti-two
Face.Further, in order to reduce package dimension, the MAX5112 chips of each section of electric current in laser SG-DBR structures will be controlled with falling
Welding equipment mode is positioned over the black ceramic part of TOSA shells, and MAX5112 chips are encapsulated using FBG.The black ceramic portion of shell
Set up separately in respect of electrical connection, be directly attached each pin of MAX5112 chips and TOSA chips.It is frame plate shown in Fig. 5
Front schematic view, include a TEC driving chip, a high-precision AD.It is two amplifiers and a DC_DC3.3V shown in Fig. 6
Turn 1.8V chips, power supply is provided for GN2044S.Laser TEC driving chips are individually placed on frame plate in design, and non-controlling
On TOSA and ROSA mainboard, it is to preferably radiate, prevents the hot crosstalk between device.A row 2 has been opened on frame plate respectively
With the row metal throuth hole of 10, inside paving copper filling.The reverse side of mainboard and the reverse side of frame plate by 12 needle connector 4-8 and
1 10 needle connector 4-9 is attached, and 2 needle connector 4-8 and 10 needle connector 4-9 are fixed in through hole by welding manner.
As shown in fig. 7, wavelength locking funtion part of the present invention mainly includes 3 parts, by temperature control chip A8033
(i.e. TEC drive circuits 5-1 specific manifestation form) is completed：Temperature-control circuit, LD bias currents control circuit and lock ripple
Circuit.Wherein in temperature-control circuit, when changing resistance value corresponding with thermistor, R1 (digital regulation resistance) and R2 (see
Figure 10) bridge of composition changes, and forms differential voltage by instrument amplifier, differential voltage is by ratio-integration-micro-
Point PID control circuit (generally prior art can be embodied as by microcontroller 4-1 programming realization, corresponding PID arithmetic,
This is repeated no more) after voltage is sent to driver, certain voltage is exported to TEC by driver, TEC is according to the electric current flowed through
Direction, to LD carry out refrigerator heating, make LD temperature stabilizations in required value.LD temperature control system must is fulfilled for control essence
Degree is high, and temperature stability waits require well, and it must be double-direction control, to adapt to ambient temperature change and LD conditions of work
Uncertainty.ADN8833 is a kind of single-chip integration that can drive refrigerator so as to stable laser or passive device temperature
Chip, in communication apparatus.It relies primarily on a thermistor with negative temperature coefficient to sense the temperature of controlled device
Degree, controlled device are coherent with TEC.The setting of target temperature is by the voltage from digital analog converter or the external world
Analog voltage caused by distributor.Whole control ring is to compensate amplifier by the PID of a high stable low noise to realize.
As shown in figure 8, ADN8833 is refrigerator TEC controller, for setting and stablizing the temperature of semiconductor laser
Degree.In TEMPSET ends input voltage, the voltage corresponds to target temperature, and the temperature of controlled device, will by thermosensitive resistance measurement
The magnitude of voltage measured is sent to ADN8833, constantly corrects the working condition of feedback loop in chip as needed, sets TEC's
Operating current so that the temperature of laser returns to target temperature within the shortest time.Can be more effective in order that obtaining the controller
Ground works, and an accurate input amplifying element is provided in chip, for calculating the actual temperature and target of laser exactly
Difference between temperature, and optimized, TEC is produced higher output current.Because electric current change is bigger, the chip
Temperature control efficiency high, it can complete to freeze in a short period of time and heat.Pass through resistance Compositional balance in peripheral control circuits
Electric bridge, is connected to ADN833 input, and input is the individual error amplifier being made up of accurate amplifier.Corresponding resistance warp
Cross after partial pressure and be input to the positive and negative end of the amplifier, i.e. THERMIN and TEMPSET ends.When the temperature varies, the resistance of resistance
Value changes.THERMIN input voltage change, and TEMPSET voltage is fixed, can be produced between the two terminals
One with the directly proportional amendment voltage of temperature change.In order to keep the stabilization of semiconductor laser outgoing wavelength and emergent power
Property, first have to accurately measure the error voltage, the input element of chip be one being capable of self-correction and from returning to zero
Accurate amplifier, this causes ADN8833 finally can be by temperature stabilization at 0.01 DEG C, that is, knowing can be incited somebody to action by temperature control feedback loop
Untill correcting voltage elimination.When temperature has been locked to target temperature, the TEMPLOCK of chip will export high level, and luminous two
Pole pipe D2 is bright.In ADN8833 output end, driving TEC work be two sets of field-effects to pipe, when refrigerator is in refrigeration work
During state, FET 1 simultaneously turns on, and electric current forward direction in TEC flows through；And when refrigerator is in heating working condition, field
Effect pipe 2 simultaneously turns on, and electric current is in TEC by flowing counterflow through.In refrigeration or heating operations, FET 1 be it is constantly on,
And FET 2 is normally on and normally off, so as to produce the square-wave signal that modulation is celebrated in a pulse, to drive TEC to work.Because
Fluctuation voltage on TEC is one on the equivalent of the fluctuating current on inductance, the cut-off frequency of L-C wave filters and filter capacitor
The function of series impedance.PID regulations compensation therein has microcontroller 4-1 completions.
Shown in Fig. 9, the main function for locking wave circuit is when ambient temperature changes, and is carried to bias current control circuit
For feedback, kept by changing the size of bias current Wavelength stabilized.In order to realize wavelength locking function must to outside and
Internal temperature is controlled, and its temperature, which protects D, to be made to hold constant, while also the electric current of its bias point is strictly controlled.Due to
Wavelength versus temperature change is more sensitive therefore higher to temperature controlled required precision.But when ambient temperature drastically changes,
Precision can not be protected.At this moment, it is necessary to which compensation circuit ensures the stabilization of wavelength.The change of temperature can cause in LD
Portion power monitoring electric current Ipmon and wavelength monitor electric current Ietalon change, while their ratio also accordingly changes
Become, their differential voltage is passed to by PI circuits by difference amplifier, the change voltage Vdiff of output one, we are by Vdiff
Add the minor variations that temperature-control circuit carrys out the LD internal temperatures caused by compensation temperature change.
Shown in Figure 10, the control of biased electrical drive test plays a part of finely tuning wavelength in the circuit.Particular by passing through
Microcontroller 4-1 adjusts potentiometer both end voltage, amplified to cause potentiometer both end voltage and the voltage phase of amplifier out
Deng.The closed-loop control being made up of proportional, integral (PI) circuit, triode, fixed resistance and instrument amplifier.Due to potentiometer
Voltage change, then the voltage of PI circuits both ends input, at this moment the output voltage of PI circuits also accordingly change
Becoming, pass through the Current amplifier of triode, current direction fixed resistance so that fixed resistance both end voltage also produces respective change,
Feedback result is transmitted by instrument amplifier.
Shown in Figure 11, the operating voltage of tunable optical module of the invention is 3.3V, and the operating voltage required for APD is high
Up to tens volts.In order to ensure APD normal work, it is necessary to design an APD high-tension circuit provided for APD it is one high inclined
Pressure, ensure that APD ROSA obtain optimal sensitivity in whole temperature range.APD high-tension circuits in the present invention are by boosting electricity
Road, voltage-multiplying circuit and temperature-compensating three parts form, and the boost chip in the present invention passes through using 508LGGP N376
After DC/DC converters, APD can obtain 20~30V high pressure, so as to meet to require.Temperature-compensating passage portion single-chip microcomputer
The voltage value on thermistor inside ROSA is sampled, software PID is realized.
Shown in Figure 12, for the single-ended drive schematic diagram of OKI4195 chip drives EA lasers in the prior art, 4195 chips
TX_OUTN pin single-stage radiofrequency signal be changed into twin-stage signal after coupled capacitor be overlapped in the DC component with ISNK
To EA modulators, electric capacity directly arrives ground to TX_OUTP pin after filtering.
It is the modulator control circuit (i.e. laser driving 4-3 a kind of specific manifestation) of patent of the present invention shown in Figure 13.
What this control circuit was selected is SEMTECH 2044S chips, and relative to 2044 other serial model chips, S series is that have more
Some package dimension 4*4mm, contrast and OKI4195 chips, 2044S are also integrated with double CDR in chip internal, are the small-sized of module
Change layout and save space.In terms of circuit realiration, TX_OUTN, TX_OUNP differential signal others pass through coupled capacitor will be single
Level radio frequency model is changed into twin-stage signal and is overlapped MZM modulator 4-10's in the DC component with VBAIS_N, VBAIS_P
P, N levels.In order to expand the scope of MZM modulator 4-10 bias voltages, VBAIS_N, VBAIS_P are connected to microcontroller 4-1's
DA mouths, pass through microcontroller 4-1 control voltage adjustable ranges.Meanwhile compared to the single-ended signal cabling mode of prior art, sheet
For inventive embodiments using differential signal cabling mode, it has stronger antijamming capability because two difference cablings it
Between coupling it is fine, when the external world has noise jamming, be almost coupled to simultaneously in both threads, and for receiving terminal
The difference of two signals is only concerned, so extraneous common-mode noise can be cancelled completely.Difference cabling can also effectively suppress EMI
(electromagnetic interference), there is higher sequential positioning precision.Because the switch change of differential signal is the intersection point positioned at two signals,
Rather than as single-ended signal judges by two threshold voltages, thus it is small by technique, the influence of temperature, the mistake in sequential can be reduced
Difference.The embodiment of the present invention improves MZM by adding a magnetic bead in radio frequency matching network and direct current matching network simultaneously
Modulating characteristic.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of Wavelength tunable module, including shell (1), ROSA (2) and TOSA (3), it is characterised in that Wavelength tunable module is also
Including PCB main board (4) and PCB daughter boards (5), specifically：
Microcontroller (4-1), APD booster circuits (4-2), laser driving (4-3), golden finger are provided with PCB main board (4)
(4-4), laser diode current chip (4-5) and power supply chip (4-6)；
Interface is provided with PCB main board (4) with the ROSA (2) and TOSA (3) data and supply port to be connected；
PCB daughter boards (5) include TEC drive circuits (5-1) and voltage conversion chip (5-4)；
PCB main board (4) completes supplying channels, and signalling channel between the two with PCB daughter boards (5) by contact pin or soft arranging wire
Corresponding connection.
2. Wavelength tunable module according to claim 1, it is characterised in that the setting of each component is specific on PCB main board (4)
Including：
Microcontroller (4-1) and APD booster circuits (4-2) are arranged at the front of PCB main board (4)；
Laser driving (4-3), laser diode current chip (4-5), power supply chip (4-6) are arranged at the reverse side of PCB main board (4).
3. Wavelength tunable module according to claim 1, it is characterised in that：Be provided with the PCB main board (4) interface with
The ROSA (2) is connected with TOSA (3) data with supply port, specifically includes：
It is used to complete the port layout of signal transmission in the front of PCB main board (4) with TOSA on PCB main board (4)；
It is used for reverse side of the port layout in PCB main board (4) that power supply connection is completed with TOSA on PCB main board (4).
4. Wavelength tunable module according to claim 1, it is characterised in that：The setting of each component is specific on PCB daughter boards (5)
Including：
TEC drive circuits (5-1) are arranged on PCB daughter boards (5) reverse side, also, the power supply circuit of laser driving is arranged on institute
State on PCB daughter boards (5) front.
5. according to any described Wavelength tunable modules of claim 1-4, it is characterised in that：PCB main board (4) and PCB daughter boards (5)
On be respectively arranged with the needle connector of at least one 2 (4-8) and 1 multi-pin connector (4-9) is attached；Wherein, 2 pin connects
Connect the power supply power supply that device (4-8) is used to complete on PCB daughter boards (5)；The multi-pin connector (4-9) is used to complete PCB main board (4)
The data-signal between microcontroller (4-1) between PCB daughter boards (5) in TEC drive circuits (5-1) and PCB main board (4)
Transmission.
6. Wavelength tunable module according to claim 5, it is characterised in that：PCB main board (4) and PCB daughter boards (5) are L-shaped,
Long-armed end face is used to connect ROSA wherein in L-type PCB main board (4), and the wherein galianconism surface of L-type PCB main board (4) is used to connect
TOSA；
Wherein, multi-pin connector (4-9) is arranged on the long-armed side of L-type PCB main board (4), and 2 needle connector (4-8) is set
In L-type PCB main board (4) short leg end surface；The power supply chip (4-6) and APD boost chips (4-3) are arranged on L-type PCB main board
(4) long arm end surface side, the microcontroller (4-1) and laser driving (4-3) are positioned close to galianconism bottom side.
7. Wavelength tunable module according to claim 1, it is characterised in that in the laser be specially sampled-grating point
During cloth Bragg reflection laser, laser diode current chip (4-5) specifically uses MAX5112 chips, and with flip chip bonding mode
It is arranged at the ceramic segment of TOSA shells；Wherein, MAX5112 chips are encapsulated using FBG, and the black ceramic part of TOSA shells is set
In respect of electrical connection, directly MAX5112 chips and TOSA laser pin are attached.
8. Wavelength tunable module according to claim 7, it is characterised in that the microcontroller (4-1) is specially
Renesas 51116ADLF；The APD booster circuits (4-2) are specially that 508LGGP chips are realized；The laser drives (4-
3) it is specially that GN2044S chips are realized；The TEC driving chips (5-1) are specially ADN8833.
9. Wavelength tunable module according to claim 7, it is characterised in that TX_OUTN, TX_OUNP of the GN2044S
Differential signal not by coupled capacitor by single-stage radio frequency model be changed into twin-stage signal with VBAIS_N, VBAIS_P direct current point
Amount is overlapped P, N level of MZM modulator (4-10).
10. Wavelength tunable module according to claim 1, it is characterised in that the shell (1) be SFP, SFP+ or
QSFP。
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| CN201710923332.0A CN107623249A (en) | 2017-09-30 | 2017-09-30 | A kind of tunable wave length module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710923332.0A CN107623249A (en) | 2017-09-30 | 2017-09-30 | A kind of tunable wave length module |
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| CN201710923332.0A Pending CN107623249A (en) | 2017-09-30 | 2017-09-30 | A kind of tunable wave length module |
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| CN110061800A (en) * | 2019-04-18 | 2019-07-26 | 浙江省广电科技股份有限公司 | A kind of Wavelength stabilized system of tunable DWDM wavelength optical node |
| CN110391846A (en) * | 2018-04-23 | 2019-10-29 | 海思光电子有限公司 | Tunable laser device assembly |
| CN110535487A (en) * | 2019-09-19 | 2019-12-03 | 三维通信股份有限公司 | A kind of multiple signals sending and receiving methods and multichannel transceiver circuit |
| CN110995354A (en) * | 2019-12-19 | 2020-04-10 | 成都优博创通信技术股份有限公司 | Optical assembly and optical module |
| CN111313972A (en) * | 2019-12-25 | 2020-06-19 | 成都优博创通信技术股份有限公司 | Wavelength tunable optical module |
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| WO2022127593A1 (en) * | 2020-12-14 | 2022-06-23 | 青岛海信宽带多媒体技术有限公司 | Optical module |
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