CN107623029A - Ohmic contact structure preparation technology and structure - Google Patents

Ohmic contact structure preparation technology and structure Download PDF

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CN107623029A
CN107623029A CN201710583815.0A CN201710583815A CN107623029A CN 107623029 A CN107623029 A CN 107623029A CN 201710583815 A CN201710583815 A CN 201710583815A CN 107623029 A CN107623029 A CN 107623029A
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layers
layer
tasi
ohmic contact
preparation technology
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CN107623029B (en
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张艺蒙
李彦良
张玉明
宋庆文
汤晓燕
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Xidian University
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Xidian University
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Abstract

The present invention relates to a kind of ohmic contact structure preparation technology, including：(a) SiC substrate layer and SiC epitaxial layer are prepared；(b) multiple layer metal is deposited in the SiC epitaxial layer and forms metal level, the multilayer material includes the first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi successively2Layer and Pt layers；(c) metal level is made annealing treatment to complete the preparation of the ohmic contact structure.Ohmic contact of the present invention, the ohmic contact structure specific contact resistivity of preparation is low, and good thermal stability is anti-oxidant.

Description

Ohmic contact structure preparation technology and structure
Technical field
The invention belongs to silicon carbide device manufacturing technology field, and in particular to a kind of ohmic contact structure preparation technology and knot Structure.
Background technology
Compared to traditional germanium, silicon materials, the advantage of third generation wide band gap semiconducter carborundum mainly includes：Electric field is born Ability is about ten times of silicon materials, and energy gap is about three times of silicon materials, and thermal conductivity factor is about silicon materials three times etc..Above material Characteristic causes it to show under the conditions of extreme temperature (especially high temperature) and big voltage, high-frequency and high power and intense radiation etc. The incomparable advantage of traditional silicon-based devices.
Ohmic contact is one of key influence factor that silicon carbide device is applied in the extreme environment such as high temperature, oxidizable, Its purpose, which is to realize when electrode is in and applies forward voltage, can carry pressure drop as small as possible, with this, to ensure device Performance.Assuming that ohm contact degradation or failure, certainly will influence the opening resistor of device, device performance can be influenceed when serious, Or even make component failure.So design good thermal stability, oxidation resistant ohmic contact structure seem particularly necessary.
At present, carborundum metal ohmic contact or alloy-layer Problems are weak including oxidation resistance, are in atmosphere It is oxidized；Heat endurance is poor, occurs degenerating under high temperature or fails；Hardness is low, easily by mechanical damage the shortcomings of, these shortcomings The reduction of ohmic contact structure reliability can be caused, seriously limit its application environment and scope, and then make the application of silicon carbide device Scope is with reliability by many influences and limitation.
Therefore, how to develop it is a kind of it is anti-oxidant, resistant to elevated temperatures carborundum ohmic contact structure is most important.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of ohmic contact structure to prepare work Skill.
An embodiment provides a kind of ohmic contact structure preparation technology, including：
(a) SiC substrate layer and SiC epitaxial layer are prepared；
(b) multiple layer metal is deposited in the SiC epitaxial layer and forms metal level, the multilayer material includes the first Ni successively Layer, Ti layers, Al layers, the 2nd Ni layers, TaSi2Layer and Pt layers；
(c) metal level is made annealing treatment to complete the preparation of the ohmic contact structure.
In one embodiment of the invention, the step (a) includes：
(a1) standard RCA clean is carried out to the SiC epitaxial layer；
(a2) pecvd process is utilized, SiO is formed in the SiC epitaxial layer2Mask layer；
(a3) SiO is etched2Mask layer, P is carried out to the SiC epitaxial layer+Ion implanting, highly doped P areas are formed, Etch away remaining SiO2Mask layer, and carry out the high temperature anneal.
In one embodiment of the invention, the SiC substrate layer and the SiC epitaxial layer material are 4H-SiC.
In one embodiment of the invention, the step (b) includes：
(b1) DC magnetron sputtering process is used, the first Ni layers are deposited in the SiC epitaxial layer；
(b2) DC magnetron sputtering process is used, the Ti layers are deposited on the first Ni layers；
(b3) DC magnetron sputtering process is used, the Al layers are deposited on the Ti layers；
(b4) DC magnetron sputtering process is used, the 2nd Ni layers are deposited on the Al layers；
(b5) rf magnetron sputtering is used, the TaSi is deposited on the 2nd Ni layers2Layer；
(b6) DC magnetron sputtering process is used, in the TaSi2The Pt layers are deposited on layer.
In one embodiment of the invention, the first Ni layers, the Ti layers, the Al layers, the 2nd Ni layers, institute State TaSi2The thickness of layer and the Pt layers is followed successively by
In one embodiment of the invention, the first Ni layers, the Ti layers, the Al layers, the 2nd Ni layers, institute State TaSi2Layer and the Pt layers deposit throughput be followed successively by 24Ar/sccm, 16Ar/sccm, 16Ar/sccm, 24Ar/sccm, 20Ar/sccm、16Ar/sccm。
In one embodiment of the invention, Al layers, the Pt layers, the Ti layers, the first Ni layers described in i, described The deposit power of 2nd Ni layers is 100W, the TaSi2The deposit power of layer is 60W.
In one embodiment of the invention, the Ti layers, the Pt layers, the TaSi2Layer deposition rate be 2.9nm/min, the first Ni layers, the deposition rate of the 2nd Ni layers are 9.8nm/min, and the deposition rate of the Al layers is 10nm/min。
In one embodiment of the invention, the first Ni layers, Ti layers, Al layers, are deposited successively on the SiC substrate layer Two Ni layers, TaSi2Vacuum, which is respectively less than, in the deposition chamber of layer and Pt layers is equal to≤5e-6mTorr。
Another embodiment of the present invention provides a kind of ohmic contact structure, includes successively from bottom to up：SiC substrate Layer, SiC epitaxial layer, the first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi2Layer and Pt layers, the ohmic contact structure be according to Prepared by preparation technology described in above-described embodiment.
Compared with prior art, the ohmic contact structure specific contact resistivity that prepared by the present invention is low, good thermal stability, antioxygen Change.
Brief description of the drawings
Fig. 1 is a kind of ohmic contact structure preparation technology flow chart provided in an embodiment of the present invention；
Fig. 2 a are a kind of ohmic contact structure CTLM structure domains provided in an embodiment of the present invention；
Fig. 2 b are the signal under microscope after a kind of ohmic contact structure metal level provided in an embodiment of the present invention is peeled off Figure；
Fig. 3 is a kind of Pt/TaSi provided in an embodiment of the present invention2/ Ni/Al/Ti/Ni/SiC structure specific contact resistivity values with The change curve of ageing time；
Fig. 4 is a kind of Pt/TaSi provided in an embodiment of the present invention2After the annealed processing of/Ni/Al/Ti/Ni/SiC structures With scanning electron microscope image (SEM) schematic diagram after burin-in process；
Fig. 5 is a kind of Pt/TaSi provided in an embodiment of the present invention2The structure of/Ni/Al/Ti/Ni/SiC ohmic contact structures Schematic diagram；
Fig. 6 is another Pt/TaSi provided in an embodiment of the present invention2/ Ni/Al/Ti/Ni/SiC ohmic contact structure structures Schematic diagram.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of ohmic contact structure preparation technology flow chart provided in an embodiment of the present invention；Including：
(a) SiC substrate layer and SiC epitaxial layer are prepared；
(b) multiple layer metal is deposited in the SiC epitaxial layer and forms metal level, the multilayer material includes the first Ni successively Layer, Ti layers, Al layers, the 2nd Ni layers, TaSi2Layer and Pt layers；
(c) metal level is made annealing treatment to complete the preparation of the ohmic contact structure.
Wherein, the step (a) includes：
(a1) standard RCA clean is carried out to the SiC epitaxial layer；
(a2) pecvd process is utilized, SiO is formed in the SiC epitaxial layer2Mask layer；
(a3) SiO is etched2Mask layer, P is carried out to the SiC epitaxial layer+Ion implanting, highly doped P areas are formed, Etch away remaining SiO2Mask layer, and carry out the high temperature anneal.
Preferably, the SiC substrate layer and the SiC epitaxial layer material are 4H-SiC.
Wherein, the step (b) includes：
(b1) DC magnetron sputtering process is used, the first Ni layers are deposited in the SiC epitaxial layer；
(b2) DC magnetron sputtering process is used, the Ti layers are deposited on the first Ni layers；
(b3) DC magnetron sputtering process is used, the Al layers are deposited on the Ti layers；
(b4) DC magnetron sputtering process is used, the 2nd Ni layers are deposited on the Al layers；
(b5) rf magnetron sputtering is used, the TaSi is deposited on the 2nd Ni layers2Layer；
(b6) DC magnetron sputtering process is used, in the TaSi2The Pt layers are deposited on layer.
Preferably, the first Ni layers, the Ti layers, the Al layers, the 2nd Ni layers, the TaSi2Layer and it is described The thickness of Pt layers is followed successively by
Preferably, the first Ni layers, the Ti layers, the Al layers, the 2nd Ni layers, the TaSi2Layer and it is described The deposit throughput of Pt layers is followed successively by 24Ar/sccm, 16Ar/sccm, 16Ar/sccm, 24Ar/sccm, 20Ar/sccm, 16Ar/ sccm。
Preferably, the Al layers, the Pt layers, the Ti layers, the first Ni layers, the deposit power of the 2nd Ni layers For TaSi described in 100W2The deposit power of layer is 60W.
Preferably, the Ti layers, the Pt layers, the TaSi2The deposition rate of layer is 2.9nm/min, the first Ni Layer, the deposition rate of the 2nd Ni layers are 9.8nm/min, and the deposition rate of the Al layers is 10nm/min.
In one embodiment of the invention, the first Ni layers, Ti layers, Al layers, are deposited successively on the SiC substrate layer Two Ni layers, TaSi2Vacuum, which is respectively less than, in the deposition chamber of layer and Pt layers is equal to 5e-6mTorr。
Wherein, Pt/TaSi is utilized2/ Ni/Al/Ti/Ni/SiC structure fabrication SiC ohmic contact structures.First, Ni and SiC Reaction.Ti layers can with reference to due to Ni and SiC reaction caused by C, in order to avoid the C atoms of free state gather on surface, and make surface Coarse or failure.
Compared with prior art, the ohmic contact structure specific contact resistivity that prepared by the present invention is low, good thermal stability, antioxygen Change.
Embodiment two
Referring again to Fig. 1, Fig. 1 is a kind of ohmic contact structure preparation technology flow chart provided in an embodiment of the present invention； A kind of Pt/TaSi is discussed in detail in the present embodiment2/ Ni/Al/Ti/Ni/SiC ohmic contact structure preparation technologies, including：
S01：4H-SiC substrate layers and SiC epitaxial layer are prepared, standard RCA clean is carried out to SiC epitaxial layer.
S02：In SiC epitaxial layer, vapour deposition process (the Plasma Enhanced of plasma enhanced chemical are utilized Chemical Vapor Deposition, PECVD) technique forms the thick SiO of ion implanting about 100nm2Mask layer.
S03：Etch the SiO2Mask layer, P is carried out to SiC epitaxial layer+Ion implanting, highly doped P areas are formed, etched The remaining SiO2Mask layer simultaneously carries out high annealing.
Wherein, the doping concentration that highly doped P areas are formed by ion implanting is 1.3 × 1020cm-3, doping type P. The condition of high annealing is carried out to keep 1700 DEG C of temperature, is annealed 30 minutes.
S04：Deposit the first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi successively in SiC material2Layer and Pt layers are formed Metal level.
Wherein, in used metal deposition methods, the first Ni layers, Ti layers, the 2nd Ni layers, Pt layers, Al layers use direct current Magnetron sputtering deposits；TaSi2Layer is deposited using rf magnetron sputtering.
The power of Metal deposition is respectively that Al layers, Pt layers, Ti layers, the first Ni layers, the 2nd Ni layers are 100W, TaSi2Layer be 60W。
The speed of Metal deposition is respectively Ti layers, Pt layers, TaSi2Layer is 2.9nm/min, and the first Ni layers, the 2nd Ni layers are 9.8nm/min, Al layer are 10nm/min.
Metal deposition throughput Ni layers are 24Ar/sccm, and Ti layers, Pt layers, Al layers are 16Ar/sccm, TaSi2Layer be 20Ar/sccm。
Metal deposition thickness is about the first Ni layers successivelyTi layersAl layers2nd Ni layers TaSi2LayerPt layers
Deposit the first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi successively on SiC substrate layer2The deposit of layer and Pt layers Intracavitary vacuum is≤5e-6mTorr。
S05：The metal level is subjected to annealing and forms Ohmic contact.
Wherein, the method that performance test is carried out to the ohmic contact structure in the present embodiment is as follows：
Step 1：4H-SiC substrates and SiC epitaxial layer are prepared, standard RCA clean is carried out to SiC epitaxial layer.
Step 2：In SiC epitaxial layer, vapour deposition process (the Plasma Enhanced of plasma enhanced chemical are utilized Chemical Vapor Deposition, PECVD) technique forms the thick SiO of ion implanting about 100nm2Mask.
Step 3：P is carried out to SiC epitaxial layer+Ion implanting, form highly doped P areas and carry out high annealing.
Step 4：Photoetching is carried out using mask plate, forms CTLM figures, primer is removed, removing natural oxidizing layer is removed using HF And other impurities.
Fig. 2 a are referred to, Fig. 2 a are a kind of ohmic contact structure CTLM structure domains provided in an embodiment of the present invention.Wherein, HF solution ratios are HF：H2O=1：20.Go removing natural oxidizing layer to need first choice to be embathed in HF solution 2 minutes, use clear water afterwards Wash off HF solution, N2Drying.
Step 5：Deposit Ni, Ti, Al, Ni, TaSi successively in SiC material2With Pt metal levels.
Step 6：Metal-stripping forms ohmic contact structure with short annealing and carries out performance to the ohmic contact structure Test.
Fig. 2 b are referred to, Fig. 2 b are micro- after being peeled off for a kind of ohmic contact structure metal level provided in an embodiment of the present invention Schematic diagram under mirror.Wherein, step 6 is specially that (wherein, SiC substrate layer and metal level integrally turn into by the slice, thin piece of deposit completion Slice, thin piece) it is placed in acetone to soak about 10 hours and tilts to metal level on photoresist layer, ultrasound about 3min is carried out afterwards to tilting gold Category layer is completely fallen off.Observation metal level does not have adhesion under the microscope.The condition of annealing is 800 DEG C of temperature, the guarantor of inert gas Protect in atmosphere, annealing time 2 minutes.
Fig. 3 is referred to, Fig. 3 is a kind of Pt/TaSi provided in an embodiment of the present invention2/ Ni/Al/Ti/Ni/SiC structure ratios connect Electric shock resistance with ageing time change curve.TaSi2Layer is the key for preventing ohmic contact structure from aoxidizing, and it can effectively hinder Gear O spreads downwards, TaSi2Decomposition index of coincidence form enable this structure for a long time effectively, TaSi2Slow decomposition make Obtain each metal-layer structure to remain unchanged substantially therefore, this structure can be made to expose and carry out burn-in test in atmosphere.Metal level 5 Ni metal-layer structures not only acted as the effect of adhesive, and annealing temperature can be reduced by introducing Ni, to reach Strengthen the anti-aging effect of metal structure.Pt/TaSi2The Ohmic contact of the p-type of/Ni/Al/Ti/Ni/SiC structures, than contact electricity Resistance has reached the magnitude of -5 powers, has reached international level.
It is a kind of Pt/TaSi provided in an embodiment of the present invention to refer to Fig. 42The annealed place of/Ni/Al/Ti/Ni/SiC structures After reason and after burin-in process scanning electron microscope image (SEM) schematic diagram.It is the Pt/TaSi wherein to scheme (a)2/Ni/ After Al/Ti/Ni/SiC structures complete annealing, the scanning electron microscope image (SEM) on surface, figure (b) is the Pt/TaSi2/ Ni/Al/Ti/Ni/SiC structures are at 500 DEG C, after carrying out 300h aging conditions in air, the scanning electron microscope diagram on surface As (SEM).To Pt/TaSi2The ohmic contact structure of the p-type of/Ni/Al/Ti/Ni/SiC structures carries out high temperature, old in atmosphere Change test, electrology characteristic does not change substantially at 300 hours.Illustrate the ohmic contact structure stabilization of the p-type of the present embodiment Electrology characteristic.The surface of the ohmic contact structure of p-type in the present embodiment suppresses to keep smooth in annealing, ageing process.
Embodiment three
Fig. 5 is referred to, is a kind of Pt/TaSi provided in an embodiment of the present invention2/ Ni/Al/Ti/Ni/SiC Ohmic contact knots Structure structural representation.Fig. 6 is referred to, Fig. 6 is another Pt/TaSi provided in an embodiment of the present invention2/Ni/Al/Ti/Ni/SiC Ohmic contact structure structural representation.The ohmic contact structure includes successively from bottom to up：SiC substrate layer 10, SiC epitaxial layer 20th, the first Ni layers 30, Ti layers 40, Al layers 50, the 2nd Ni layers 60, TaSi270 and Pt of layer layers 80, wherein, the Ohmic contact knot Structure is according to prepared by preparation technology described in above-described embodiment.
The present embodiment, pass through the continuous Ni layers 30 of growth regulation one, Ti layers 40, Al layers 50, the 2nd Ni layers in SiC epitaxial layer 20 60、TaSi270 and Pt of layer layers 80, anti-oxidant, the resistant to elevated temperatures carborundum ohmic contact structure of high quality can be formed.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic； And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and Scope.

Claims (10)

  1. A kind of 1. ohmic contact structure preparation technology, it is characterised in that including：
    (a) SiC substrate layer and SiC epitaxial layer are prepared；
    (b) in the SiC epitaxial layer deposit multiple layer metal formed metal level, the multilayer material successively include the first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi2Layer and Pt layers；
    (c) metal level is made annealing treatment to complete the preparation of the ohmic contact structure.
  2. 2. preparation technology according to claim 1, it is characterised in that the step (a) includes：
    (a1) standard RCA clean is carried out to the SiC epitaxial layer；
    (a2) pecvd process is utilized, SiO is formed in the SiC epitaxial layer2Mask layer；
    (a3) SiO is etched2Mask layer, P is carried out to the SiC epitaxial layer+Ion implanting, highly doped P areas are formed, etched Fall remaining SiO2Mask layer, and carry out the high temperature anneal.
  3. 3. preparation technology according to claim 1, it is characterised in that the SiC substrate layer and the SiC epitaxial layer material It is 4H-SiC.
  4. 4. preparation technology according to claim 1, it is characterised in that the step (b) includes：
    (b1) DC magnetron sputtering process is used, the first Ni layers are deposited in the SiC epitaxial layer；
    (b2) DC magnetron sputtering process is used, the Ti layers are deposited on the first Ni layers；
    (b3) DC magnetron sputtering process is used, the Al layers are deposited on the Ti layers；
    (b4) DC magnetron sputtering process is used, the 2nd Ni layers are deposited on the Al layers；
    (b5) rf magnetron sputtering is used, the TaSi is deposited on the 2nd Ni layers2Layer；
    (b6) DC magnetron sputtering process is used, in the TaSi2The Pt layers are deposited on layer.
  5. 5. preparation technology according to claim 1, it is characterised in that the first Ni layers, the Ti layers, the Al layers, The 2nd Ni layers, the TaSi2The thickness of layer and the Pt layers is followed successively by
  6. 6. preparation technology according to claim 1, it is characterised in that the first Ni layers, the Ti layers, the Al layers, The 2nd Ni layers, the TaSi2The deposit throughput of layer and the Pt layers is followed successively by 24Ar/sccm, 16Ar/sccm, 16Ar/ sccm、24Ar/sccm、20Ar/sccm、16Ar/sccm。
  7. 7. preparation technology according to claim 1, it is characterised in that the Al layers, the Pt layers, the Ti layers, described First Ni layers, the deposit power of the 2nd Ni layers are 100W, the TaSi2The deposit power of layer is 60W.
  8. 8. preparation technology according to claim 1, it is characterised in that the Ti layers, the Pt layers, the TaSi2The shallow lake of layer Product speed is 2.9nm/min, and the first Ni layers, the deposition rate of the 2nd Ni layers are 9.8nm/min, the shallow lake of the Al layers Product speed is 10nm/min.
  9. 9. preparation technology according to claim 1, it is characterised in that deposit the first Ni successively on the SiC substrate layer Layer, Ti layers, Al layers, the 2nd Ni layers, TaSi2Vacuum, which is respectively less than, in the deposition chamber of layer and Pt layers is equal to 5e-6mTorr。
  10. 10. a kind of ohmic contact structure, it is characterised in that include successively from bottom to up：SiC substrate layer, SiC epitaxial layer, first Ni layers, Ti layers, Al layers, the 2nd Ni layers, TaSi2Layer and Pt layers, the ohmic contact structure is according to as described in claim 1~9 Prepared by preparation technology.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108550523A (en) * 2018-03-23 2018-09-18 西安理工大学 A method of preparing silicon carbide Ohmic electrode with photoresist

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393031A (en) * 2014-11-21 2015-03-04 中国科学院微电子研究所 Insert layer composite structure and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
CN104393031A (en) * 2014-11-21 2015-03-04 中国科学院微电子研究所 Insert layer composite structure and manufacturing method thereof

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ARIEL VIRSHUP等: "《Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications》", 《JOURNAL OF ELECTRONIC MATERIALS》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108550523A (en) * 2018-03-23 2018-09-18 西安理工大学 A method of preparing silicon carbide Ohmic electrode with photoresist
CN108550523B (en) * 2018-03-23 2020-10-27 西安理工大学 Method for preparing silicon carbide ohmic electrode by using photoresist

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