CN111710599A - Preparation method of silicon carbide ohmic contact - Google Patents
Preparation method of silicon carbide ohmic contact Download PDFInfo
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- CN111710599A CN111710599A CN202010620297.7A CN202010620297A CN111710599A CN 111710599 A CN111710599 A CN 111710599A CN 202010620297 A CN202010620297 A CN 202010620297A CN 111710599 A CN111710599 A CN 111710599A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 113
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 238000010849 ion bombardment Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- -1 argon ions Chemical class 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002065 alloy metal Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 230000007704 transition Effects 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 abstract 2
- 230000005641 tunneling Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
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Abstract
The invention relates to the field of silicon carbide devices, in particular to a preparation method of silicon carbide ohmic contact; the method comprises the following steps: standard cleaning is carried out on the silicon carbide sample wafer; carrying out ion bombardment on the silicon carbide sample wafer by adopting non-reactive plasma; preparing an ohmic contact metal layer on the silicon carbide sample wafer; and annealing the silicon carbide sample wafer with the ohmic contact metal layer. The surface of the silicon carbide sample wafer is subjected to ion bombardment by adopting plasmas, so that the surface state of the silicon carbide sample wafer is changed, and a series of controlled interface states are introduced into the silicon carbide and metal interface, so that the effective potential barrier height between metal and silicon carbide can be reduced under the controlled condition, further the effective auxiliary effect on the transition or tunneling of carriers between metal and silicon carbide is realized, the transport efficiency of the carriers through the potential barrier is improved, the ohmic contact effect of the silicon carbide and the metal is obviously improved, the contact resistance is reduced, and the good ohmic contact of the silicon carbide is formed.
Description
Technical Field
The invention relates to the field of silicon carbide devices, in particular to a preparation method of silicon carbide ohmic contact.
Background
The silicon carbide material is a wide bandgap semiconductor with excellent performance, not only has the characteristics of wide bandgap (3 times of S i), high thermal conductivity (3.3 times of Si), high breakdown field strength (10 times of Si), high saturated electron drift rate (2.5 times of S i) and the like, but also has excellent physical and chemical stability, extremely strong radiation resistance, mechanical strength and the like, so that the silicon carbide material is widely applied to the field of high-temperature, high-frequency and high-power electronic devices.
When the metal-semiconductor contact has linear current-voltage or the contact resistance thereof is negligible relative to the semiconductor body, the metal-semiconductor contact is called ohmic contact, the ohmic contact is a part of any semiconductor device connected with external components and circuit elements, the metal/silicon carbide semiconductor ohmic contact is the most basic and most important structure for forming the silicon carbide device, the quality of the metal/silicon carbide semiconductor ohmic contact directly influences performance indexes such as efficiency, gain and switching speed of the silicon carbide device, and therefore, the preparation of the good silicon carbide ohmic contact is the basis for improving the performance and reliability of the silicon carbide device.
However, since silicon carbide has a large semiconductor forbidden band width, and very few metals with a low enough work function to obtain a low barrier, and the silicon carbide surface state affects, it is far more difficult to prepare a good silicon carbide ohmic contact than other semiconductors, and therefore, it is necessary to provide a method for preparing a silicon carbide ohmic contact to obtain a good silicon carbide ohmic contact.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect that it is difficult for silicon carbide to form a stable ohmic contact in the prior art, thereby providing a method for preparing a silicon carbide ohmic contact.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a preparation method of silicon carbide ohmic contact comprises the following steps:
standard cleaning is carried out on the silicon carbide sample wafer;
carrying out ion bombardment on the silicon carbide sample wafer by adopting non-reactive plasma;
preparing an ohmic contact metal layer on the silicon carbide sample wafer;
and annealing the silicon carbide sample wafer with the ohmic contact metal layer.
Further, the non-reactive plasma is at least one of argon ions, silicon ions and carbon ions.
Further, the ion bombardment of the silicon carbide sample wafer by using the non-reactive plasma comprises:
the non-reactive plasma is allowed to act on the silicon carbide sample wafer for 1 to 10 minutes at a pressure of 1 to 10mTorr and an energy of 10 to 100W.
Further, the silicon carbide sample wafer is made of a silicon carbide semiconductor material.
Further, the silicon carbide semiconductor material is a silicon carbide substrate material or a silicon carbide epitaxial material.
Furthermore, the silicon carbide semiconductor material is a P-type doped silicon carbide material, and the carrier concentration is 1 × 1013～5×1020cm-3。
Further, the standard cleaning comprises the steps of removing a surface oxidation layer of the silicon carbide sample wafer by respectively adopting sulfuric acid hydrogen peroxide, 1# liquid-ammonia water hydrogen peroxide, 2# liquid-hydrochloric acid hydrogen peroxide and diluted hydrofluoric acid, and drying the silicon carbide sample wafer.
Furthermore, the ohmic contact metal layer is a single metal layer, a multi-layer composite metal layer or an alloy metal layer.
Further, the annealing treatment is common annealing, rapid thermal annealing or laser annealing.
The technical scheme of the invention has the following advantages:
1. the invention provides a preparation method of silicon carbide ohmic contact, which changes the surface state of a silicon carbide sample wafer by adopting non-reactive plasma to carry out ion bombardment on the surface of the silicon carbide sample wafer, introduces a series of controlled interface states at the silicon carbide and metal interface, leads the Fermi level to be pinned on the surface of a proper energy level, at the moment, the contact potential barrier between metal/silicon carbide is only related to the introduced surface state and is not related to the work function of the metal any more, thereby reducing the effective potential barrier height between the metal and the silicon carbide by controlling the position and the state of the surface state under the controlled condition, further playing an effective auxiliary role in carrier transition or penetration between the metal and the silicon carbide, improving the transport efficiency of carriers through the potential barrier, obviously improving the ohmic contact effect of the silicon carbide and the metal, and reducing the contact resistance, a good ohmic contact to silicon carbide is formed.
2. According to the preparation method of the silicon carbide ohmic contact, argon ions, silicon ions, carbon ions and the like are adopted, when the ions bombard the SiC surface, harmful substances cannot be introduced due to reaction on the surface of the silicon carbide sample wafer, and the Fermi level pinning effect on the surface due to surface passivation reaction cannot be influenced, so that the preparation method can be used for ion bombardment on the surface of the silicon carbide sample wafer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a CTLM pattern formed by photolithography in example 1 of the present invention;
FIG. 2 is a schematic view of a metal/P-type silicon carbide band structure in example 1 of the present invention;
FIG. 3 is a schematic diagram showing the connection of elements during the test of the CTLM test method in embodiment 1 of the present invention;
FIG. 4 shows the results of electrical property tests of silicon carbide wafers according to example 1 of the present invention and comparative example 1.
Detailed Description
The following examples are provided to further understand the present invention, not to limit the scope of the present invention, but to provide the best mode, not to limit the content and the protection scope of the present invention, and any product similar or similar to the present invention, which is obtained by combining the present invention with other prior art features, falls within the protection scope of the present invention.
The examples do not show the specific experimental steps or conditions, and can be performed according to the conventional experimental steps described in the literature in the field. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
The invention relates to a preparation method of silicon carbide ohmic contact, which comprises the following steps:
standard cleaning is carried out on the silicon carbide sample wafer;
carrying out ion bombardment on the silicon carbide sample wafer by adopting non-reactive plasma;
preparing an ohmic contact metal layer on the silicon carbide sample wafer;
and annealing the silicon carbide sample wafer with the ohmic contact metal layer.
Specifically, the non-reactive plasma is at least one of argon ions, silicon ions and carbon ions, and preferably argon ions.
Specifically, the ion bombardment of the silicon carbide sample wafer by using the non-reactive plasma includes:
the non-reactive plasma is allowed to act on the silicon carbide sample wafer for 1 to 10 minutes at a pressure of 1 to 10mTorr and an energy of 10 to 100W. Wherein the ion bombardment can be carried out in a separate device or a chamber for metal sputtering.
Preferably, the silicon carbide sample wafer is a silicon carbide semiconductor material.
Preferably, the silicon carbide semiconductor material is a silicon carbide substrate material or a silicon carbide epitaxial material. The silicon carbide epitaxial material can be grown by a homogeneous or heterogeneous epitaxial growth mode.
Preferably, the silicon carbide semiconductor material is a P-type doped silicon carbide material, and the carrier concentration is 1 × 1013～5×1020cm-3。
Preferably, the standard cleaning comprises the steps of removing a surface oxide layer of the silicon carbide sample wafer by respectively adopting sulfuric acid hydrogen peroxide, 1# liquid-ammonia water hydrogen peroxide, 2# liquid-hydrochloric acid hydrogen peroxide and diluted hydrofluoric acid, and drying the silicon carbide sample wafer.
Preferably, the ohmic contact metal layer may be prepared by magnetron sputtering, electron beam evaporation, thermal evaporation, or the like.
Preferably, the ohmic contact metal layer is a single metal layer, a multi-layer composite metal layer or an alloy metal layer.
Preferably, the annealing treatment is ordinary annealing, rapid thermal annealing or laser annealing.
Example 1
The embodiment relates to a preparation method of silicon carbide ohmic contact, which specifically comprises the following steps:
s1, taking a silicon carbide sample wafer, wherein in the embodiment, the silicon carbide sample wafer is made of semiconductor crystal material, is epitaxially grown and has a carrier concentration of 5 × 1019cm-3P-type doped silicon carbide material of (a);
s2, standard RCA cleaning is carried out on the silicon carbide sample wafer: removing a surface oxide layer of the silicon carbide sample wafer by sequentially adopting sulfuric acid hydrogen peroxide, 1# liquid-ammonia water hydrogen peroxide, 2# liquid-hydrochloric acid hydrogen peroxide and diluted hydrofluoric acid, and drying the silicon carbide sample wafer;
s3, photoetching: in order to realize the specific contact resistance test of the sample wafer, photoetching is carried out on the surface of the silicon carbide sample wafer to prepare a CTLM graph, wherein the CTLM graph is shown in figure 1;
s4, ion bombardment: in a magnetron sputtering device, argon ions are selected, and a silicon carbide sample wafer is acted for 2 minutes under the conditions that the pressure of a cavity is 10mTorr and the energy is 30W;
s5, preparing an ohmic contact metal layer: performing technical sputtering by adopting magnetron sputtering equipment, sputtering metal on the surface of the silicon carbide sample wafer, wherein the sputtered metal is of a three-layer metal Al/Ti/Al structure, and the thickness of each layer is as follows: 100nm/100nm/100nm, total thickness of 300nm, and performing metal stripping to obtain metal CTLM pattern,
s6, alloy annealing: and (3) carrying out alloy annealing on the silicon carbide sample wafer with the metal sputtered on the surface, which is obtained in the step S4, in a rapid annealing furnace, wherein the annealing temperature is 1050 ℃ and the annealing time is 2 min.
In this embodiment, an interface state is introduced by performing ion bombardment on a silicon carbide sample wafer, and a metal/P-type silicon carbide energy band structure after the interface state is introduced is shown in fig. 2.
And (3) carrying out an electrical performance test on the silicon carbide sample wafer obtained in the step S6 by using a Circular Transmission Line Model (CTLM), and calculating the specific contact resistance, wherein the test method is as shown in fig. 3, and the calculation formula of the specific contact resistance is as follows:
wherein: l is the radius of the inner circle metal electrode in the CTLM model; d is the ring width; rshIs the sheet resistance of the 4H-SiC substrate material; l isTIs the transmission length and the specific contact resistance ρ c.
The results of the electrical property test of the silicon carbide wafer of this example are shown in FIG. 4, which is a sample treated with plasma, and the calculated specific contact resistance is 3.67 × 10-4Ωcm2。
Comparative example 1
This comparative example relates to a method for preparing a silicon carbide ohmic contact, and differs from example 1 in that no ion bombardment step is provided in this comparative example.
The results of the electrical property test of the silicon carbide wafer of this comparative example are shown in FIG. 4 for the plasma untreated sample, and the specific contact resistance of this comparative example was calculated to be 6.24 × 10-4Ωcm2。
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (9)
1. A preparation method of silicon carbide ohmic contact is characterized by comprising the following steps:
standard cleaning is carried out on the silicon carbide sample wafer;
carrying out ion bombardment on the silicon carbide sample wafer by adopting non-reactive plasma;
preparing an ohmic contact metal layer on the silicon carbide sample wafer;
and annealing the silicon carbide sample wafer with the ohmic contact metal layer.
2. The method according to claim 1, wherein the non-reactive plasma is at least one of argon ions, silicon ions, and carbon ions.
3. The method of claim 1 or 2, wherein the ion bombardment of the silicon carbide sample wafer with the non-reactive plasma comprises:
the non-reactive plasma is allowed to act on the silicon carbide sample wafer for 1 to 10 minutes at a pressure of 1 to 10mTorr and an energy of 10 to 100W.
4. The production method according to any one of claims 1 to 3, wherein the silicon carbide-like piece is a silicon carbide semiconductor material.
5. The production method according to claim 4, wherein the silicon carbide semiconductor material is a silicon carbide substrate material or a silicon carbide epitaxial material.
6. The production method according to claim 4 or 5, wherein the silicon carbide semiconductor material is a P-type doped silicon carbide material, and the carrier concentration is 1 × 1013～5×1020cm-3。
7. The preparation method according to any one of claims 1 to 6, wherein the standard cleaning comprises the steps of removing a surface oxidation layer of the silicon carbide sample wafer by using sulfuric acid hydrogen peroxide, 1# liquid-ammonia water hydrogen peroxide, 2# liquid-hydrochloric acid hydrogen peroxide and diluted hydrofluoric acid respectively, and drying the silicon carbide sample wafer.
8. The method of any one of claims 1-7, wherein the ohmic contact metal layer is a single metal layer, a multi-layer composite metal layer, or an alloy metal layer.
9. The production method according to any one of claims 1 to 8, wherein the annealing treatment is ordinary annealing, rapid thermal annealing, or laser annealing.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113571440A (en) * | 2021-06-23 | 2021-10-29 | 中国电子科技集团公司第五十五研究所 | Method for measuring ohmic contact resistivity of SiC chip by improved CTLM method |
| CN113808923A (en) * | 2021-08-26 | 2021-12-17 | 中国电子科技集团公司第五十五研究所 | Ohmic contact preparation method of SiC device |
| CN117116747A (en) * | 2023-10-17 | 2023-11-24 | 深圳基本半导体有限公司 | Pretreatment method of silicon carbide wafer and silicon carbide wafer |
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| CN117116747A (en) * | 2023-10-17 | 2023-11-24 | 深圳基本半导体有限公司 | Pretreatment method of silicon carbide wafer and silicon carbide wafer |
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