CN107621676B - 一种光模块 - Google Patents
一种光模块 Download PDFInfo
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- CN107621676B CN107621676B CN201710687160.1A CN201710687160A CN107621676B CN 107621676 B CN107621676 B CN 107621676B CN 201710687160 A CN201710687160 A CN 201710687160A CN 107621676 B CN107621676 B CN 107621676B
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CN85103942B (zh) * | 1985-05-16 | 1988-03-16 | 中国科学院上海冶金所 | 绝缘层上多晶硅的激光加热再结晶方法 |
CN101170060B (zh) * | 2006-10-24 | 2010-11-17 | 联华电子股份有限公司 | 硅锗外延层的制造方法 |
CN102383192B (zh) * | 2011-07-29 | 2014-06-18 | 上海新傲科技股份有限公司 | 锗衬底的生长方法以及锗衬底 |
CN202189170U (zh) * | 2011-08-29 | 2012-04-11 | 青岛海信宽带多媒体技术有限公司 | 一种低成本的插拔式光模块 |
CN105405916B (zh) * | 2015-12-22 | 2017-03-22 | 中国科学院半导体研究所 | 硅基宽光谱探测器及制备方法 |
CN205723580U (zh) * | 2016-05-09 | 2016-11-23 | 厦门市计量检定测试院 | Si基Ge混合型波导光电探测器 |
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Effective date of registration: 20200603 Address after: 701, 801, building C3, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN SONT TECHNOLOGY Co.,Ltd. Applicant after: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 710065, No. 7, No. 15, high tech Road, Xi'an hi tech Zone, Shaanxi, China, -A009 Applicant before: XI'AN CREATION KEJI Co.,Ltd. |
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Address after: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee after: Shenzhen Xunte Communication Technology Co.,Ltd. Patentee after: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: SHENZHEN SONT TECHNOLOGY Co.,Ltd. Patentee before: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. |