CN107621676A - 一种光模块 - Google Patents
一种光模块 Download PDFInfo
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- CN107621676A CN107621676A CN201710687160.1A CN201710687160A CN107621676A CN 107621676 A CN107621676 A CN 107621676A CN 201710687160 A CN201710687160 A CN 201710687160A CN 107621676 A CN107621676 A CN 107621676A
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85103942A (zh) * | 1985-05-16 | 1986-12-24 | 中国科学院上海冶金所 | 绝缘层上多晶硅的激光加热再结晶方法 |
CN101170060A (zh) * | 2006-10-24 | 2008-04-30 | 联华电子股份有限公司 | 硅锗外延层的制造方法 |
CN102383192A (zh) * | 2011-07-29 | 2012-03-21 | 上海新傲科技股份有限公司 | 锗衬底的生长方法以及锗衬底 |
CN202189170U (zh) * | 2011-08-29 | 2012-04-11 | 青岛海信宽带多媒体技术有限公司 | 一种低成本的插拔式光模块 |
CN105405916A (zh) * | 2015-12-22 | 2016-03-16 | 中国科学院半导体研究所 | 硅基宽光谱探测器及制备方法 |
CN205723580U (zh) * | 2016-05-09 | 2016-11-23 | 厦门市计量检定测试院 | Si基Ge混合型波导光电探测器 |
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- 2017-08-11 CN CN201710687160.1A patent/CN107621676B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85103942A (zh) * | 1985-05-16 | 1986-12-24 | 中国科学院上海冶金所 | 绝缘层上多晶硅的激光加热再结晶方法 |
CN101170060A (zh) * | 2006-10-24 | 2008-04-30 | 联华电子股份有限公司 | 硅锗外延层的制造方法 |
CN102383192A (zh) * | 2011-07-29 | 2012-03-21 | 上海新傲科技股份有限公司 | 锗衬底的生长方法以及锗衬底 |
CN202189170U (zh) * | 2011-08-29 | 2012-04-11 | 青岛海信宽带多媒体技术有限公司 | 一种低成本的插拔式光模块 |
CN105405916A (zh) * | 2015-12-22 | 2016-03-16 | 中国科学院半导体研究所 | 硅基宽光谱探测器及制备方法 |
CN205723580U (zh) * | 2016-05-09 | 2016-11-23 | 厦门市计量检定测试院 | Si基Ge混合型波导光电探测器 |
Non-Patent Citations (5)
Title |
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PHAM T,DU W,TRAN H: "Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection", 《OPTICS EXPRESS》 * |
ZIHENG LIU: "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering", 《THIN SOLID FILMS》 * |
严光明: "Si基GePIN光电探测器的设计与制备", 《中国硕士学位论文全文数据库信息科技辑》 * |
周志文: "Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制", 《中国博士学位论文全文数据库信息科技辑》 * |
黄志伟: "激光退火改善Si上外延Ge晶体质量", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 * |
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Address after: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee after: Shenzhen Xunte Communication Technology Co.,Ltd. Patentee after: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 701, 801, building C3, Nanshan wisdom garden, 1001 Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: SHENZHEN SONT TECHNOLOGY Co.,Ltd. Patentee before: JIANGXI SONT COMMUNICATION TECHNOLOGY Co.,Ltd. |
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