CN107620048A - The manufacture method of silicon target structure and its manufacture method and silicon target component - Google Patents
The manufacture method of silicon target structure and its manufacture method and silicon target component Download PDFInfo
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- CN107620048A CN107620048A CN201610561654.0A CN201610561654A CN107620048A CN 107620048 A CN107620048 A CN 107620048A CN 201610561654 A CN201610561654 A CN 201610561654A CN 107620048 A CN107620048 A CN 107620048A
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Abstract
A kind of silicon target structure and its manufacture method of manufacture method and silicon target component, the manufacture method of silicon target structure include, there is provided silicon target, the silicon target have solder side；Using chemical plating process, copper coating is formed on the silicon target solder side.The present invention utilizes chemical plating process, stable forms copper coating on silicon target solder side, the copper coating has good wellability with conventional solder or backboard, so as to significantly improve silicon target and the welding performance of other materials, silicon target is allowd to realize reliable combination with backboard, to meet the needs of silicon target component uses steadily in the long term.
Description
Technical field
The present invention relates to sputtering target material technical field, more particularly to a kind of silicon target structure and its manufacture method and silicon target
The manufacture method of material component.
Background technology
Magnetron sputtering is that one kind utilizes charged particle bombardment target, target atom is being served as a contrast from surface effusion and uniform deposition
Substrate coating technique on bottom.Magnetron sputtering is so that its sputtering raste is high, substrate temperature rise is low, film-base junction is made a concerted effort, excellent metal-plated
The advantages such as the uniformity and controllability of film be strong become most excellent substrate coating technique, thus are widely used in integrated circuit
Manufacturing process.
Target material assembly is target by meeting sputtering performance and the backboard structure of some strength is combined, had with the target
Into.Backboard can be assembled in sputtering machine table in the target material assembly and play a supporting role, and have the effect of conduction heat.Target
Material component need to make it to be both arranged on sputtering machine table with reliability by the way that target and backboard are welded together to form
On, while sputtering can be effectively controlled under magnetic field, electric field action again.
Silicon materials are widely used in integrated circuit industry, wide market.Wherein, silicon target is one in target
Kind, it can be used for making target material assembly.However, because the wellability between silicon materials and conventional solder is poor, wherein,
The solder of use is including In, SnAgCu or Sn etc..
Therefore when welding to form target material assembly silicon target and backboard, the adhesion between silicon target and backboard needs to be carried
Height, the stability of target material assembly are poor.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of manufacture of silicon target structure and its manufacture method and silicon target component
Method, the welding performance between silicon target and other materials is improved, for example, improving binding ability between silicon target and backboard.
To solve the above problems, the present invention provides a kind of manufacture method of silicon target structure, including：Silicon target, institute are provided
Stating silicon target has solder side；Using chemical plating process, copper coating is formed on the silicon target solder side.
Optionally, in the plating process, the temperature of chemical plating fluid is 60 DEG C~65 DEG C.
Optionally, in the plating process, the temperature fluctuation range of chemical plating fluid is in ± 2 DEG C.
Optionally, in the plating process, the pH value of chemical plating fluid is 12~12.5.
Optionally, in the plating process, the pH value fluctuation range of chemical plating fluid is in ± 0.2.
Optionally, in the plating process, by adding sodium hydroxide solution into chemical plating fluid, institute is adjusted
State the pH value of chemical plating fluid.
Optionally, in the chemical plating process, also chemical plating fluid is stirred, and stir when a length of 2min~
3min。
Optionally, in the plating process, the useful load of chemical plating fluid is 0.5dm2/ L~1.5dm2/L。
Optionally, the material of the copper coating is copper, wherein, the mass percent of copper is more than or equal to 80%.
Optionally, the thickness of the copper coating is 5 μm~12 μm.
Optionally, before the copper coating is formed, surface sand-blasting process is carried out to the solder side, increases the welding
The roughness in face.
Optionally, it is 3 μm~8 μm coarse that the surface sand-blasting process, which is suitable to make the solder side to form mean depth,
Layer.
Optionally, the technological parameter of the surface sand-blasting process includes：The sand grains used is No. 46 white fused aluminas, the sky of use
Atmospheric pressure scope is 0.1Mpa~0.3Mpa.
Optionally, sand grains is sprayed to the solder side using the nozzle of sand-blasting gun, to carry out the surface sand-blasting process；And
The distance between the nozzle and the solder side are 10cm~15cm；The nozzle sprays the direction of sand grains and the solder side
Between angle be to be less than 90 degree more than 0 degree or be less than 180 degree more than 90 degree.
Optionally, the angle that the nozzle sprays between the direction of sand grains and the solder side be 30 degree~60 degree or
120 degree~150 degree.
Optionally, in the silicon target crest line position, the distance between the nozzle and the solder side are 15cm.
Optionally, after the surface sand-blasting process is carried out, in addition to：The solder side is carried out using giant
Cleaning；The solder side is cleaned using pure water or deionized water.
Optionally, after the surface sand-blasting process is carried out, in addition to, the silicon target is placed in sensitizing solution, it is right
The solder side of the silicon target carries out sensitized treatment.
Optionally, the sensitizing solution is the aqueous solution of stannous chloride and hydrochloric acid；And the temperature of the sensitizing solution be 23 DEG C~
27℃。
Optionally, after the sensitized treatment is carried out, in addition to, the silicon target is placed in activating solution, to the silicon
The solder side of target carries out activation process.
Optionally, the activating solution is the aqueous solution of palladium bichloride and hydrochloric acid；And the temperature of the activating solution is 27 DEG C~33
℃。
Optionally, before the surface sand-blasting process is carried out, in addition to, the solder side of the silicon target is polished
Processing.
The present invention also provides a kind of silicon target structure using using the manufacture of above-mentioned manufacture method, including：Silicon target, it is described
Silicon target has solder side；Copper coating on the silicon target solder side.
The present invention also provides a kind of manufacture method of silicon target component, including：Using foregoing manufacture method, silicon target is manufactured
Material structure；Backboard is provided, the backboard has surface to be welded；By the to be welded of the copper coating in the silicon target structure and the backboard
Face is oppositely arranged and is bonded, and by welding procedure, the silicon target is soldered on backboard using the copper coating, to form silicon
Target material assembly.
Optionally, the backboard is copper backboard, aluminium backboard or albronze backboard.
Optionally, the copper coating in the silicon target structure is being oppositely arranged with the surface to be welded of the backboard and is being bonded it
Before, in addition to：The coated with solder layer on the surface to be welded of the backboard.
Optionally, the material of the solder layer is In, Ni, Sn, Al or SnAgCu.
Compared with prior art, technical scheme has advantages below：
In the technical scheme of the manufacture method of silicon target structure provided by the invention, using chemical plating process, in silicon target
Solder side on form copper coating, due to having good wellability between copper coating material and conventional solder, therefore utilize shape
Into copper coating can effectively improve silicon target and the welding performance of other materials.For example, can solve silicon target and backboard
Welding Problems so that silicon target and backboard realize reliable connection, meet the needs of silicon target component uses steadily in the long term.
In alternative, in chemical plating process, the temperature of chemical plating fluid is 60 DEG C~65 DEG C so that is meeting chemical plating
While technique plating speed faster demand, chemical plating fluid has reliable stability, is not susceptible to selfdecomposition, and in copper coating
Nickel content is moderate, reduces stress and porosity in copper coating so that the copper coating of formation has excellent performance.
In alternative, before chemical plating process is carried out, surface sand-blasting process also is carried out to the solder side of silicon target, carried
The roughness of high solder side so that the copper coating that chemical plating process is formed is discontinuous coating, so as to reduce copper coating surface
Power, the adhesion between copper coating and silicon target is improved, therefore the copper coating formed is not easy to come off from silicon target.
In alternative, before chemical plating process is carried out, also the solder side of the silicon target is carried out sensitized treatment with
And activation process, the activation energy of increase silicon target solder side so that the reactivity enhancing of silicon target solder side, speed and welding
The speed of formation copper coating on face, improves the adhesion between copper coating and silicon target solder side.
In the technical scheme of the manufacture method of silicon target component provided by the invention, there is provided silicon target, and silicon target is welded
There is copper coating on face；Backboard is provided, the solder side of the surface to be welded of the backboard and silicon target is oppositely arranged and welded
Connect, to form silicon target component.In welding process, there is good wellability so that silicon between copper coating and the backboard
The reliability combined between target and backboard is high, meets the needs of silicon target component uses steadily in the long term.
Brief description of the drawings
Fig. 1 is the schematic flow sheet for the manufacture silicon target structure that the present embodiment provides；
Fig. 2 to Fig. 7 is the structural representation of each step in embodiment illustrated in fig. 1；
Fig. 8 to Figure 10 is the structural representation for the manufacture silicon target component process that the present embodiment provides.
Embodiment
From background technology, the adhesion between prior art silicon target and backboard is poor so that the silicon target group of formation
The stability of part is poor.
To solve the above problems, the present invention provides a kind of manufacture method of silicon target structure, including：Silicon target, institute are provided
Stating silicon target has solder side；Using chemical plating process, copper coating is formed on the silicon target solder side.
The present invention forms copper coating on the solder side of silicon target using chemical plating process, so as to improve silicon target and other
The welding performance of material, such as the associativity between silicon target and backboard can be improved.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 1 is the schematic flow sheet for the manufacture silicon target structure that the present embodiment provides.
With reference to figure 1, the step of manufacturing the silicon target, includes：
Step S1, silicon target is provided, the silicon target has solder side；
Step S2, surface sand-blasting process is carried out to the solder side, increases the roughness of the solder side；
Step S3, the silicon target is placed in sensitizing solution, sensitized treatment is carried out to the solder side of the silicon target；
Step S4, the silicon target is placed in activating solution, activation process is carried out to the solder side of the silicon target；
Step 5, using chemical plating process, form copper coating on the silicon target solder side.
The manufacturing process of the silicon target structure provided below with reference to accompanying drawing the present embodiment is described in detail.Fig. 2 is extremely
Fig. 7 is the structural representation of each step in the present embodiment.
With reference to reference to figure 1 and Fig. 2, perform step S1, silicon target 101 is provided, the silicon target 101 has solder side 110.
The material of the silicon target 101 is silicon.In the present embodiment, the material of the silicon target 101 is HIGH-PURITY SILICON, specifically
, the mass percentage content of silicon is more than or equal to 99.99% in the silicon target 101.
The shape of cross section of the silicon target 101 can be configured according to application environment and sputtering requirement, such as silicon target
The shape of cross section of material 101 can be with rounded, rectangle, annular, cone or other any regular shapes or irregular shape.This
In embodiment, the shape of cross section of the silicon target 101 is rectangle, and accordingly, the solder side 110 is shaped as rectangle.
In the present embodiment, surface grinding processing can also be carried out to the solder side 110 of the silicon target 101, to the silicon
Target 101 is cleaned and dried.The surface grinding processing can use the machining sides such as polishing, lathe or turning
Method.
With reference to reference to figure 1 and Fig. 3, perform step S2, surface sand-blasting process is carried out to the solder side 110, described in increase
The roughness of solder side 110.
In the present embodiment, formed subsequently on solder side 110 before copper coating, it is thick first to increase the surface of solder side 110
Rugosity so that the copper coating subsequently formed on solder side 110 is discontinuous coating, so that copper coating surface tension force is small,
Improve the adhesion between copper coating and silicon target 101 so that copper coating is not easy to come off from silicon target 101.
The surface sand-blasting process forms pit on solder side 110, so as to form rough layer on solder side 110, schemes
In the pit is shown in the form of stain.The depth of the rough layer should not be excessively shallow, also unsuitable too deep.If the rough layer
Depth is excessively shallow, then the roughness of the solder side 110 is still relatively low, the copper coating surface tension force subsequently formed on solder side 110
It is larger, therefore the adhesion between copper coating and silicon target 101 has much room for improvement；If the depth of the rough layer is too deep, after
Continue that the continuity of the copper coating formed on solder side 110 is excessively poor, the copper coating thickness of some regions can be caused excessively thin or even difficult
To form copper coating.
Therefore, in the present embodiment, it is 3 μm that the surface sand-blasting process, which is suitable to make the solder side 110 form mean depth,
~8 μm of rough layer.It should be noted that the depth of the rough layer refers to the depth of pit on the solder side 110.
Specifically, carrying out surface sand-blasting process to the solder side 110 using sand-blasting machine, the nozzle of the sand-blasting machine passes through
Air pressure sprays sand grains to solder side 110, by the surface matter for controlling sand grains size and air pressure solder side 110
Amount reaches sets requirement.
In the present embodiment, it is contemplated that silicon target hardness is larger, and the sand grains used is No. 46 white fused alumina.And sand-blasting machine use
Air pressure is unsuitable excessive, also unsuitable too small.The quality of silicon target 101 is more crisp, if the air pressure used is excessive, sprays
The power of sand is too big, easily causes and occurs collapsing angle phenomenon at the crest line of silicon target 101, influences product appearance and integrality.If adopt
Air pressure is too small, then sandblasting is short of power so that the rough layer that is formed on the solder side 110 of silicon target 101 it is flat
Equal depth is too small, influences the adhesion of follow-up copper coating and the solder side 110 of silicon target 101.
Therefore, in the present embodiment, the technological parameter of the surface sand-blasting process includes：The sand grains used is white firm for No. 46
Jade, the air pressure range used is 0.1Mpa~0.3Mpa.
Wherein, No. 46 in No. 46 white fused aluminas are the labels according to GB2477083, specifically, referring to 97% mass ratio
The granularity of white fused alumina above is 250 μm~600 μm.Sand grains is sprayed to the solder side 110 using the nozzle of sand-blasting gun, to enter
The row surface sand-blasting process.The distance between the nozzle of the sand-blasting gun and the solder side 110 are 10cm~15cm；It is described
Angle between the direction for the sand grains that nozzle sprays and solder side 110 is non-perpendicular angled relationships, that is to say, that the nozzle spray
The angle gone out between the direction of sand grains and the solder side 110 is to be less than 90 degree more than 0 degree or be less than 180 degree more than 90 degree.
In the present embodiment, the angle that the nozzle is sprayed between the direction of sand grains and the solder side 110 is 30 degree~60
Degree or 120 degree~150 degree so that the uniformity of the sand grains of nozzle ejection is higher, and the coverage of sand grains of ejection more has
Ensure.
In addition it is also necessary to explanation, the solder side 110 of the crest line position of silicon target 101 carries out surface sand-blasting process
When, the distance between the nozzle and the solder side 110 are 15cm, and nozzle sprays the direction of sand grains and the solder side
Angle between 110 is 30 degree~60 degree or 120 degree~150 degree, so as to effectively prevent from collapsing angle phenomenon.
After the surface sand-blasting process is carried out, cleaning treatment also is carried out to the solder side 110 of the silicon target 101.
The cleaning treatment includes：The solder side 110 is cleaned using giant；Then pure water or deionized water are used
The solder side 110 is cleaned.
Wherein, the cleaning treatment can remove the powdered adhesion layer adhered on solder side 110, such as the surface such as sand grains
Attachment, improve the copper coating quality being subsequently formed.
In the present embodiment, the solder side 110 is cleaned using giant, the impact using the current of high pressure is made
With so that powdered adhesion layer departs from from solder side 110, so as to reach the effective effect for removing adhesion layer.
The pressure that the giant uses when being cleaned to the solder side 110 is unsuitable too small, also unsuitable excessive.Such as
Pressure is too small described in fruit, and the attachment such as sand grains is difficult to effectively be washed off, and causes the copper subsequently formed on solder side 110
Adhesion between coating and solder side 110 is poor；If the pressure is excessive, the giant is to solder side 110
Cleaning can influence the rough layer being previously formed, and then influence the thickness evenness of copper coating formed.
Therefore, in the present embodiment, pressure that the giant uses when being cleaned to solder side 110 for 0.5Mpa~
1.5Mpa。
The pattern of solder side 110 is impacted when being cleaned in order to avoid giant to solder side 110, the present embodiment
In, the cleaning treatment uses giant without whole, after being cleaned using giant to solder side 110, adopts
Solder side 110 is cleaned with pure water or deionized water, reduces the duration that giant is cleaned to solder side 110.
After the cleaning treatment is carried out, oil removal treatment can also be carried out to the solder side 110 of the silicon target 101,
The oil removal treatment can remove cutting fluid, the lubricating oil etc. that silicon target 101 remains during sandblasting, machining or storage
Greasy dirt, prevent the greasy dirt from being had undesirable effect to the technique for being subsequently formed copper coating, improve the matter for the copper coating being subsequently formed
Amount.
In the present embodiment, the oil removal treatment uses electrochemical deoiling technique.
With reference to reference to figure 1 and Fig. 4, step S3 is performed, after the surface sand-blasting process is carried out, by the silicon target
101 are placed in sensitizing solution, and sensitized treatment 103 is carried out to the solder side 110 of the silicon target 101.
The effect of the sensitized treatment 103 includes：Being formed on the solder side 110 of silicon target 101 has reduction
Reduction liquid film, have in the reduction liquid film and play the ion of reduction, and the ion with reduction
Its reducing power can be kept the long period under certain condition, and the speed of its reduction reaction can be controlled.
In the present embodiment, the sensitizing solution is the aqueous solution of stannous chloride and hydrochloric acid, and the temperature of the sensitizing solution is 23
DEG C~27 DEG C.Specifically, the sensitizing solution is, 10g stannous chlorides are dissolved in 40mL concentrated hydrochloric acids, add distilled water diluting extremely
1000mL；And the silicon target 101 and sensitizing solution are placed in constant temperature in thermostat water bath 102, the temperature of thermostat water bath 102
Degree could be arranged to 25 DEG C, stir 3min~8min.
After the sensitized treatment 103 is carried out, the silicon target 101 is carried out clearly using pure water or deionized water
Wash.
With reference to referring to figs. 1 to Fig. 5, perform step S4, after the sensitized treatment 103 (with reference to figure 4) is carried out, also wrap
Include, the silicon target 101 is placed in activating solution, activation process 105 is carried out to the solder side 110 of the silicon target 101.
Foregoing sensitized treatment 103 and the collective effect of activation process 105, can increase the work of the solder side 110 of silicon target 101
Changing can so that the reactivity enhancing of the solder side 110 of silicon target 101, increases the subsequently electroless copper coating on solder side 110
Speed, the problem of copper coating avoided the formation of is combined loosely with solder side 110, improve between copper coating and solder side 110
Adhesion.
The selection of the activating solution is relevant with the material of silicon target 101, as long as can increase the solder side 110 of silicon target 101
Activation energy so that solder side 110 reactivity enhancing.
In the present embodiment, the activating solution is the aqueous solution of palladium bichloride and hydrochloric acid, and the temperature of the activating solution is 27 DEG C
~33 DEG C.Specifically, the activating solution is, 0.25g palladium bichloride is dissolved in 2.5mL concentrated hydrochloric acids, adds distilled water diluting extremely
1000mL；And the silicon target 101 and activating solution are placed in constant temperature in thermostat water bath 104, the thermostat water bath 104
Temperature could be arranged to 30 DEG C, and stir 8min~10min.
After foregoing sensitized treatment 103, tin ion is adsorbed with solder side 110, when the solder side 110 for being adsorbed with tin ion connects
When contacting activating solution containing palladium, palladium can be reduced by tin and deposited on the solder side 110 of silicon target 101, so as to the shape on solder side 110
Into active centre, to be subsequently smoothed out chemical plating process.
After the activation process 105 is carried out, the silicon target 101 is carried out clearly using pure water or deionized water
Wash.
With reference to reference to figure 1, Fig. 6 and Fig. 7, step S5 is performed, using chemical plating process, in the solder side of silicon target 101
Copper coating 106 is formed on 110.
Specifically, the silicon target 101 and chemical plating fluid are placed in reaction vessel 107, to carry out chemical plating process
Form the copper coating 106.Copper ion is included in the chemical plating fluid.
It is further to improve copper coating 106 and the solder side of silicon target 101 in order to improve the quality of the copper coating 106 of formation
Adhesion between 110, nickel ion can also be contained in the chemical plating fluid, and the nickel ion can reduce copper ion reduction
Speed.In other embodiments, cobalt ions or antimony ion can also be contained in the chemical plating fluid.
The temperature of the chemical plating fluid can influence to form the plating speed of copper coating 106, the stability of chemical plating fluid and copper plating
The quality of layer 106.The plating speed is speeded as chemical plating fluid temperature raises, and if the temperature of chemical plating fluid is too high, meeting again
Cause chemical plating fluid unstable and selfdecomposition easily occurs.
In addition, in the present embodiment, chemical plating process is carried out using alkali electroless plating solution.Alkali electroless plating bath temperature degree is relatively low,
And the plating speed of alkali electroless plating solution at a lower temperature is faster than the plating speed of acid chemical plating liquid, but as temperature increases, alkalescence
The plating of chemical plating fluid is fast to improve the fast of the plating speed raising not as acid chemical plating liquid.Therefore, in the present embodiment, in the chemical plating
In technical process, the temperature of the chemical plating fluid is 60 DEG C~65 DEG C.
The temperature of chemical plating fluid can also influence the quality for the copper coating 106 to be formed；The temperature rise of chemical plating fluid, plating speed add
It hurry up, and nickel content declines in copper coating 106, stress and the porosity increase of copper coating 106, and the copper coating 106 is anti-corrosion
Performance reduces；If the temperature fluctuation of the chemical plating fluid is excessive, sheet coating can be formed, causes the matter of copper coating 106 to be formed
Measure the bad and influence internal bond strength of copper coating 106.
Therefore, it is necessary to control the temperature fluctuation of the chemical plating fluid in plating process.In the present embodiment,
In the plating process, the temperature fluctuation range of chemical plating fluid is in ± 2 DEG C.
In the present embodiment, the chemical plating process is carried out using alkali electroless plating solution.The pH value of the chemical plating fluid is to plating
Nickel content in speed and copper coating 106 is relevant.Rise with the pH value of chemical plating fluid, plate speed and accelerate in copper coating 106 simultaneously
Nickel content decline.The pH value change of chemical plating fluid can also influence stress distribution in copper coating 106, the high chemical plating liquid phase of pH value
The nickel content of copper coating 106 that should be formed is low, shows as tension；Conversely, the copper coating that the low chemical plating fluid of pH value is correspondingly formed
106 nickel contents are high, show as compression.
Therefore, in the present embodiment, in the plating process, the pH value of chemical plating fluid is 12~12.5.
In the present embodiment, the material of the copper coating 106 is copper, and also contains nickel in the copper coating 106, wherein, copper
Mass percent be more than or equal to 80%, accordingly, nickel is also contained in the copper coating 106, and the mass percent of nickel is small
In or equal to 20%, ensure while the quality of copper coating 106 is improved, the nickel content is smaller therefore chemical plating process in also
The speed of native copper is moderate, and the stress shown in the copper coating 106 formed is moderate.
And in plating process, with deposition of the copper on solder side 110, H+ in chemical plating fluid not medium well
Into so that the pH value of chemical plating fluid constantly declines, therefore in the plating process, need to timely adjust the pH of chemical plating fluid
Value.In the present embodiment, in the plating process, the pH value fluctuation range of chemical plating fluid is in ± 0.2.
It is molten by adding sodium hydroxide into the chemical plating fluid in the plating process in the present embodiment
Liquid, adjust the pH value of the chemical plating fluid.
Meanwhile in plating process, chemical plating fluid can be improved by carrying out appropriate stir process to chemical plating fluid
The quality of stability and the copper coating of formation 106.First, stir process can prevent chemical plating fluid hot-spot, prevent from supplementing
Part combined concentration is too high during chemical plating fluid, and prevents local ph acute variation；In addition, stir process may also speed up reaction
Product leaves the speed of solder side 110, is advantageous to improve plating speed, ensures the quality of copper coating 106, prevent the surface of copper coating 106
There is the defects of stomata.
Excessive agitation easily causes 110 local plating leakage of solder side, and makes to deposit copper on reactor vessel wall and bottom, when serious
Even chemical plating fluid is caused to decompose.In addition, agitating mode and stirring intensity can also influence nickel content in copper coating 106.
A length of 2min~3min when in the present embodiment, being stirred, and stirring to the chemical plating fluid, mixing speed
5 revs/min~15 revs/min.
Also, in chemical plating process, the useful load of chemical plating fluid has an impact to chemical plating fluid stability, wherein, load
Measure the ratio between chemical plating fluid volume for referring to the chemical plating area of solder side 110 and using.
Allow the size of useful load relevant with chemical plating condition and chemical plating fluid composition.Same chemical plating fluid is being developed
During all regulations have optimal useful load, should launch silicon target 101 and supplementization in time by regulation in plating process
Plating solution is learned, to obtain optimal chemical plating effect.The useful load is unsuitable too small, also unsuitable excessive.If the useful load
Too small, small impurity particle will turn into catalytic activation center and deposit in chemical plating fluid, easily cause chemical plating fluid
Decompose；If the useful load is excessive, i.e., catalytic surface is excessive, and electroless plating reaction is violent, easily generates sub- nickel acid copper and precipitates and shadow
Ring the stability and the performance of copper coating 106 of chemical plating fluid.
Therefore, in the present embodiment, in the plating process, the useful load of chemical plating fluid is 0.5dm2/ L~
1.5dm2/L。
By controlling each technological parameter in chemical plating process, the copper coating 106 of outward appearance and excellent performance is obtained.
The duration of the chemical plating affects the thickness of copper coating 106 on the surface of silicon target 101, and the duration of chemical plating gets over appearance
The thickness for the copper coating 106 that should be formed is thicker.In the present embodiment, when a length of 25min~30min of the chemical plating, the copper
The thickness of coating 106 is 5 μm~12 μm.
Surface sand-blasting process has been carried out to solder side 110 due to foregoing so that solder side 110 has certain roughness,
Therefore the present embodiment uses the copper coating 106 that chemical plating process is formed on the solder side 110 as discontinuous coating so that copper
The surface tension of coating 106 is small, therefore copper coating 106 is not easy to come off from silicon target 101, so as to improve copper coating 106 with
Adhesion between silicon target 101.Wherein, discontinuous coating is it is to be understood that copper coating on the solder side 110 in pit
106 mutually stagger with the copper coating 106 outside pit；Or the top of copper coating 106 on the solder side 110 in pit is less than
The top of copper coating 106 outside pit.
In the present embodiment, using chemical plating, copper coating 106, the copper plating are formed on the solder side 110 of silicon target 101
Wellability between layer 106 and conventional back veneer material or conventional solder is good, therefore the utilization copper coating 106 can incite somebody to action
Silicon target 101 is welded with backboard, to form silicon target component, in sputtering technology.
Accordingly, the present embodiment also provides a kind of silicon target structure formed using previous building methods.Fig. 7 shows this
The structural representation for the silicon target structure that embodiment provides, the silicon target structure include：
Silicon target 101, the silicon target 101 have solder side 110；
Copper coating 106 on the solder side 110 of the silicon target 101.
In the present embodiment, the description about silicon target 101 refers to foregoing corresponding description.The solder side 110 be with
The surface of rough layer, the copper coating 106 are discontinuous coating so that the surface tension of copper coating 106 is small, therefore silicon target 101
Adhesion between the copper coating 106 is strong so that copper coating 106 is not easy to come off from silicon target 101.
In the silicon target structure that the present embodiment provides, copper coating 106 is provided with the solder side 110 of silicon target 101, it is described
Copper coating 106 can be as the medium that silicon target 101 and backboard be welded, to realize being abutted against for silicon target 101 and backboard
Close, improve silicon target 101 and the welding performance of backboard, form the silicon target component for meeting use demand steady in a long-term.
The present invention also provides a kind of manufacture method of silicon target component, including, using foregoing manufacture method, make silicon target
Material structure；Backboard is provided, the backboard has surface to be welded；By the to be welded of the copper coating in the silicon target structure and the backboard
Face is oppositely arranged and is bonded, and by welding procedure, the silicon target is soldered on backboard using the copper coating, to form silicon
Target material assembly.
Due to having good wellability between copper coating and the backboard, therefore can improve between silicon target and backboard
Adhesion, improve the stability and reliability of the silicon target component of formation.
The manufacturing process of silicon target component provided by the invention is described in detail below with reference to accompanying drawing.Fig. 8 extremely schemes
10 be the structural representation of silicon target component manufacturing process provided by the invention.
With reference to figure 7, using foregoing manufacture method, silicon target structure is made.
With reference to figure 8, there is provided backboard 201, the backboard 201 have surface to be welded 210.
The backboard 201 is played a supporting role in the silicon target component being subsequently formed, and has the function of conduction heat, and
There is good effect of impregnation with the solder layer being subsequently formed.In the present embodiment, the backboard 201 is copper backboard.In other realities
Apply in example, the backboard can also be aluminium backboard or albronze backboard.
In the present embodiment, the size of the backboard 201 is more than the size of the silicon target 101.In other embodiments, institute
The size of the silicon target can also be equal to by stating the size of backboard.
The shape of cross section of the backboard 201 can be configured according to the shape of cross section of silicon target 101, for example, described
The shape of cross section of backboard 201 can be with rounded, rectangle, cone or other any regular shapes or irregular shape.This
In embodiment, the shape of cross section of the backboard 201 is rectangular.
With reference to figure 9, the coated with solder layer 202 on the surface to be welded 210 of the backboard 201.
In the present embodiment, the material of the solder layer 202 is In, and In fusing point and hardness is relatively low, can avoid follow-up
In welding process, the silicon target 101 and backboard 201 deform；In addition, the infiltration fusion faculty of In and copper is strong so that weldering
The bed of material 202 has good wellability with backboard 201, and solder layer 202 also has good wellability with copper coating 106, from
And it can further improve the yield and performance of the silicon target component being subsequently formed.
In other embodiments, the material of the solder layer can also be In, Ni, Sn, Al or SnAgCu in one kind or
It is a variety of.
In addition it is also necessary to illustrate, in the present embodiment, the solder layer 202 is only coated on part surface to be welded 210,
Avoid solder layer 202 from overflowing into the sputter face of silicon target 101, prevent solder layer 202 from being polluted to the sputter face of silicon target 101,
Wherein, the sputter face of the silicon target 101 is the face relative with the solder side 110.
With reference to figure 10, the surface to be welded 210 of the copper coating 106 in the silicon target structure and the backboard 201 is set relatively
Put and be bonded, by welding procedure, the silicon target 101 is soldered on backboard 201 using the copper coating 106, to be formed
Silicon target component.
In the present embodiment, the silicon target 101 and backboard 201 are heated so that copper coating 106 and solder layer
202 melt and mutually infiltrate, to form silicon target component.
It should be noted that in other embodiments, the copper coating directly can also be in contact with the surface to be welded of backboard,
In welding procedure, the copper coating mutually infiltrates with the backboard, so as to realize the reliable welding of silicon target and backboard.
In the present embodiment, silicon target 101 is soldered in the technique of backboard 201, make use of to be formed and welded in silicon target 101
Copper coating 106 on face 110 (with reference to figure 7) realizes welding, and the copper coating 106 has well mutually infiltration with backboard 201
Performance, and the copper coating 106 also has good mutual wetting property with solder layer 202, so as to effectively improve silicon
Welding performance between target 101 and backboard 201 so that silicon target 101 can realize positive engagement with backboard 201, meet silicon
The demand that target material assembly uses steadily in the long term.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (27)
- A kind of 1. manufacture method of silicon target structure, it is characterised in that including：Silicon target is provided, the silicon target has solder side；Using chemical plating process, copper coating is formed on the silicon target solder side.
- 2. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that in the plating process, The temperature of chemical plating fluid is 60 DEG C~65 DEG C.
- 3. the manufacture method of silicon target structure as claimed in claim 2, it is characterised in that in the plating process, The temperature fluctuation range of chemical plating fluid is in ± 2 DEG C.
- 4. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that in the plating process, The pH value of chemical plating fluid is 12~12.5.
- 5. the manufacture method of silicon target structure as claimed in claim 4, it is characterised in that in the plating process, The pH value fluctuation range of chemical plating fluid is in ± 0.2.
- 6. the manufacture method of silicon target structure as claimed in claim 5, it is characterised in that in the plating process, By adding sodium hydroxide solution into chemical plating fluid, the pH value of the chemical plating fluid is adjusted.
- 7. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that also right in the chemical plating process Chemical plating fluid is stirred, and a length of 2min~3min during stirring.
- 8. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that in the plating process, The useful load of chemical plating fluid is 0.5dm2/ L~1.5dm2/L。
- 9. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that the material of the copper coating is copper, its In, the mass percent of copper is more than or equal to 80%.
- 10. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that the thickness of the copper coating be 5 μm~ 12μm。
- 11. the manufacture method of silicon target structure as claimed in claim 1, it is characterised in that right before the copper coating is formed The solder side carries out surface sand-blasting process, increases the roughness of the solder side.
- 12. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that the surface sand-blasting process is suitable to make The solder side forms the rough layer that mean depth is 3 μm~8 μm.
- 13. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that the technique of the surface sand-blasting process Parameter includes：The sand grains used is No. 46 white fused alumina, and the air pressure range used is 0.1Mpa~0.3Mpa.
- 14. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that using the nozzle of sand-blasting gun to described Solder side sprays sand grains, to carry out the surface sand-blasting process；And the distance between the nozzle and the solder side are 10cm ~15cm；The angle that the nozzle sprays between the direction of sand grains and the solder side is to be less than 90 degree more than 0 degree or be more than 90 degree are less than 180 degree.
- 15. the manufacture method of silicon target structure as claimed in claim 14, it is characterised in that the nozzle sprays the direction of sand grains Angle between the solder side is 30 degree~60 degree or 120 degree~150 degree.
- 16. the manufacture method of silicon target structure as claimed in claim 14, it is characterised in that in the silicon target crest line position, The distance between the nozzle and the solder side are 15cm.
- 17. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that carrying out the surface sand-blasting process Afterwards, in addition to：The solder side is cleaned using giant；Using pure water or deionized water to the solder side Cleaned.
- 18. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that carrying out the surface sand-blasting process Afterwards, in addition to, the silicon target is placed in sensitizing solution, sensitized treatment is carried out to the solder side of the silicon target.
- 19. the manufacture method of silicon target structure as claimed in claim 18, it is characterised in that the sensitizing solution be stannous chloride and The aqueous solution of hydrochloric acid；And the temperature of the sensitizing solution is 23 DEG C~27 DEG C.
- 20. the manufacture method of silicon target structure as claimed in claim 18, it is characterised in that after the sensitized treatment is carried out, Also include, the silicon target is placed in activating solution, activation process is carried out to the solder side of the silicon target.
- 21. the manufacture method of silicon target structure as claimed in claim 20, it is characterised in that the activating solution is palladium bichloride and salt The aqueous solution of acid；And the temperature of the activating solution is 27 DEG C~33 DEG C.
- 22. the manufacture method of silicon target structure as claimed in claim 11, it is characterised in that carrying out the surface sand-blasting process Before, in addition to, polishing processing is carried out to the solder side of the silicon target.
- 23. a kind of silicon target structure of manufacture method manufacture using as described in any one of claim 1~22, its feature exist In, including：Silicon target, the silicon target have solder side；Copper coating on the silicon target solder side.
- A kind of 24. manufacture method of silicon target component, it is characterised in that including：Using the manufacture method as described in any one of claim 1~22, silicon target structure is manufactured；Backboard is provided, the backboard has surface to be welded；Copper coating in the silicon target structure is oppositely arranged and is bonded with the surface to be welded of the backboard, by welding procedure, The silicon target is soldered on backboard using the copper coating, to form silicon target component.
- 25. the manufacture method of silicon target component as claimed in claim 24, it is characterised in that the backboard is copper backboard, the aluminium back of the body Plate or albronze backboard.
- 26. the manufacture method of silicon target component as claimed in claim 24, it is characterised in that by the silicon target structure Before copper coating and the surface to be welded of the backboard are oppositely arranged and are bonded, in addition to：Weldering is coated on the surface to be welded of the backboard The bed of material.
- 27. the manufacture method of silicon target component as claimed in claim 26, it is characterised in that the material of the solder layer be In, Ni, Sn, Al or SnAgCu.
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| US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
| US7314650B1 (en) * | 2003-08-05 | 2008-01-01 | Leonard Nanis | Method for fabricating sputter targets |
| CN101537530A (en) * | 2009-03-16 | 2009-09-23 | 宁波江丰电子材料有限公司 | Manufacturing method of target structure |
| CN101648303A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Welding method of target materials and back plates |
| CN105296943A (en) * | 2014-07-30 | 2016-02-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target assembly |
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- 2016-07-14 CN CN201610561654.0A patent/CN107620048A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
| US7314650B1 (en) * | 2003-08-05 | 2008-01-01 | Leonard Nanis | Method for fabricating sputter targets |
| CN101537530A (en) * | 2009-03-16 | 2009-09-23 | 宁波江丰电子材料有限公司 | Manufacturing method of target structure |
| CN101648303A (en) * | 2009-05-08 | 2010-02-17 | 宁波江丰电子材料有限公司 | Welding method of target materials and back plates |
| CN105296943A (en) * | 2014-07-30 | 2016-02-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target assembly |
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