JP2003124214A - Method and unit for forming wiring - Google Patents
Method and unit for forming wiringInfo
- Publication number
- JP2003124214A JP2003124214A JP2001317217A JP2001317217A JP2003124214A JP 2003124214 A JP2003124214 A JP 2003124214A JP 2001317217 A JP2001317217 A JP 2001317217A JP 2001317217 A JP2001317217 A JP 2001317217A JP 2003124214 A JP2003124214 A JP 2003124214A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- seed layer
- substrate
- plating solution
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 238000009713 electroplating Methods 0.000 claims abstract description 101
- 238000007772 electroless plating Methods 0.000 claims abstract description 54
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 39
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims description 161
- 230000002787 reinforcement Effects 0.000 claims description 19
- 238000005868 electrolysis reaction Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 119
- 239000010949 copper Substances 0.000 description 67
- 229910052802 copper Inorganic materials 0.000 description 66
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 65
- 238000011084 recovery Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 229910000365 copper sulfate Inorganic materials 0.000 description 11
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 229910001431 copper ion Inorganic materials 0.000 description 9
- 238000004070 electrodeposition Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- -1 phthalocyanine compound Chemical class 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229940005657 pyrophosphoric acid Drugs 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OARRHUQTFTUEOS-UHFFFAOYSA-N safranin Chemical compound [Cl-].C=12C=C(N)C(C)=CC2=NC2=CC(C)=C(N)C=C2[N+]=1C1=CC=CC=C1 OARRHUQTFTUEOS-UHFFFAOYSA-N 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- RGLYKWWBQGJZGM-ZCXUNETKSA-N 4-[(z)-4-(4-hydroxyphenyl)hex-3-en-3-yl]phenol Chemical compound C=1C=C(O)C=CC=1C(/CC)=C(/CC)C1=CC=C(O)C=C1 RGLYKWWBQGJZGM-ZCXUNETKSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- JFEVWPNAOCPRHQ-UHFFFAOYSA-N chembl1316021 Chemical compound OC1=CC=CC=C1N=NC1=CC=CC=C1O JFEVWPNAOCPRHQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002755 poly(epichlorohydrin) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical compound CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 1
- 229940048084 pyrophosphate Drugs 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- SOUHUMACVWVDME-UHFFFAOYSA-N safranin O Chemical compound [Cl-].C12=CC(N)=CC=C2N=C2C=CC(N)=CC2=[N+]1C1=CC=CC=C1 SOUHUMACVWVDME-UHFFFAOYSA-N 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、配線形成方法及び
その装置に関し、特に半導体ウエハ等の半導体基板の表
面に形成した配線用の微細な窪みに銅や銀等の導電体を
埋め込んで配線を形成する配線形成方法及びその装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring forming method and an apparatus therefor, and in particular, wiring is formed by embedding a conductor such as copper or silver in a fine wiring recess formed on the surface of a semiconductor substrate such as a semiconductor wafer. The present invention relates to a wiring forming method and an apparatus for forming the wiring.
【０００２】[0002]
【従来の技術】近年、半導体基板上に配線回路を形成す
るための金属材料として、アルミニウムまたはアルミニ
ウム合金に代えて、電気抵抗率が低くエレクトロマイグ
レーション耐性が高い銅（Ｃｕ）を用いる動きが顕著に
なっている。この種の銅配線は、基板の表面に設けた配
線用の微細窪みの内部に銅を埋込むことによって一般に
形成される。この銅配線を形成する方法としては、ＣＶ
Ｄ、スパッタリング及びめっきといった手法があり、め
っきが一般的であるが、いずれにしても、基板のほぼ全
表面に銅を成膜し、化学的機械的研磨（ＣＭＰ）により
不要の銅を除去するようにしている。2. Description of the Related Art In recent years, as a metal material for forming a wiring circuit on a semiconductor substrate, copper (Cu) having a low electric resistivity and a high electromigration resistance has been remarkably used in place of aluminum or an aluminum alloy. Has become. This kind of copper wiring is generally formed by embedding copper inside the fine wiring recesses provided on the surface of the substrate. As a method of forming this copper wiring, CV
There are methods such as D, sputtering, and plating, and plating is common, but in any case, copper is deposited on almost the entire surface of the substrate, and unnecessary copper is removed by chemical mechanical polishing (CMP). I am trying.
【０００３】図１６は、この種の銅配線基板Ｗの製造例
を工程順に示すもので、図１６（ａ）に示すように、半
導体素子を形成した半導体基材１上の導電層１ａの上
に、例えばＳｉＯ２からなる絶縁膜２を堆積し、この絶
縁膜２の内部に、例えばリソグラフィ・エッチング技術
によりコンタクトホール３と配線用の溝４を形成し、そ
の上にＴａＮ等からなるバリア膜５、更にその上に電解
めっきの給電層として銅シード層６をスパッタリング等
により形成する。FIG. 16 shows an example of manufacturing a copper wiring board W of this type in the order of steps. As shown in FIG. 16 (a), on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed. Then, an insulating film 2 made of, for example, SiO 2 is deposited, a contact hole 3 and a wiring groove 4 are formed inside the insulating film 2 by, for example, a lithographic etching technique, and a barrier film 5 made of TaN or the like is formed thereon. Further, a copper seed layer 6 is formed thereon as a power feeding layer for electrolytic plating by sputtering or the like.
【０００４】そして、図１６（ｂ）に示すように、基板
Ｗの表面に銅めっきを施すことで、基板Ｗのコンタクト
ホール３及び溝４内に銅を充填させるとともに、絶縁膜
２上に銅層７を堆積させる。その後、化学機械的研磨
（ＣＭＰ）により、絶縁膜２上の銅層７を除去して、コ
ンタクトホール３及び配線用の溝４に充填させた銅層７
の表面と絶縁膜２の表面とをほぼ同一平面にする。これ
により、図１６（ｃ）に示すように、絶縁膜２の内部に
銅シード層６と銅層７からなる配線８が形成される。Then, as shown in FIG. 16B, the contact hole 3 and the groove 4 of the substrate W are filled with copper by plating the surface of the substrate W with copper, and the insulating film 2 is coated with copper. Deposit layer 7. Then, the copper layer 7 on the insulating film 2 is removed by chemical mechanical polishing (CMP) to fill the contact hole 3 and the wiring groove 4 with the copper layer 7.
And the surface of the insulating film 2 are substantially flush with each other. Thereby, as shown in FIG. 16C, the wiring 8 including the copper seed layer 6 and the copper layer 7 is formed inside the insulating film 2.
【０００５】ここで、微細配線化が進み、配線幅がより
狭く、かつアスペスト比（幅に対する深さの比）がより
高くなるに従って、スパッタリング等で形成されるシー
ド層が溝底部まで均一に届かなくなり、シード層の膜厚
が溝底部に向かって徐々に薄くなったり、また溝側面や
底面の一部に析出せずにシード層が途中で途切れて不連
続になることがある。このように、シード層が不完全な
状態で電解めっきによって銅の埋め込みを行うと、銅層
の内部にめっき未析出部（ボイド）が生じる。Here, as fine wiring is advanced, the wiring width becomes narrower, and the aspest ratio (ratio of depth to width) becomes higher, the seed layer formed by sputtering or the like reaches the groove bottom uniformly. In some cases, the thickness of the seed layer gradually decreases toward the bottom of the groove, or the seed layer does not deposit on a part of the side surface or bottom of the groove and is discontinuous in the middle. As described above, when copper is embedded by electrolytic plating in a state where the seed layer is incomplete, unplated portions (voids) are generated inside the copper layer.
【０００６】これを防止するため、シード層の表面に、
無電解めっきまたは電解めっきの一方を施してシード層
を補強し、しかる後、電解めっきによる銅の埋め込みを
行うことが提案されている。In order to prevent this, on the surface of the seed layer,
It has been proposed that either electroless plating or electrolytic plating be applied to reinforce the seed layer, and then copper is embedded by electrolytic plating.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、無電解
めっき単独でシード層を補強すると、無電解めっきは、
反応種の供給律速がめっきを支配するため、下地（シー
ド層）の形状をなぞった形状に成膜され、この結果、ホ
ールや溝内部におけるめっきの付き廻りは良いが、下地
に凹凸があれば、その凹凸を強調してしまい、その後の
電解めっきでボイドを発生させることなく銅等を埋め込
むことが困難となる。一方、電解めっき単独でシード層
を補強すると、下地（シード層）が不連続の場合に、導
通が確保できなくなり、逆にシード層をエッチングして
しまい、本来の目的のシード層の補強が不可能となると
考えられる。However, when the seed layer is reinforced by the electroless plating alone, the electroless plating is
Since the rate-determining supply of the reactive species governs the plating, the film is formed in a shape that traces the shape of the underlayer (seed layer). As a result, the plating distribution inside the holes and grooves is good, but if the underlayer is uneven However, the unevenness is emphasized, and it becomes difficult to embed copper or the like in the subsequent electrolytic plating without generating voids. On the other hand, if the seed layer is reinforced by electroplating alone, conduction cannot be secured when the base (seed layer) is discontinuous, and on the contrary, the seed layer is etched, and the original reinforcement of the seed layer is not achieved. It will be possible.
【０００８】本発明は上記事情に鑑みてなされたもの
で、高アスペスト比の微細配線であっても、シード層を
確実に補強して、ボイドのない健全な配線を形成できる
ようにした配線形成方法及びその装置を提供することを
目的とする。The present invention has been made in view of the above circumstances. Even in the case of fine wiring having a high aspect ratio, the seed layer is surely reinforced so that a sound wiring without voids can be formed. It is an object to provide a method and an apparatus thereof.
【０００９】[0009]
【課題を解決するための手段】請求項１に記載の発明
は、配線用の微細窪みを形成した基板の表面にシード層
を形成し、前記シード層を無電解めっきと電解めっきに
よって補強し、前記微細窪みの内部に電解めっきにより
導電体を埋め込むことを特徴とする配線形成方法であ
る。このように、無電解めっきと電解めっきの２段階の
めっきによってシード層を補強することで、シード層が
不連続でもめっきできるという無電解めっきの利点と、
凹凸が少なくより平滑にめっきできるという電解めっき
の利点を利用して、シード層をより平坦かつ確実に補強
することができる。According to a first aspect of the present invention, a seed layer is formed on the surface of a substrate having fine recesses for wiring, and the seed layer is reinforced by electroless plating and electrolytic plating, A method of forming a wiring is characterized in that a conductor is embedded in the inside of the fine recess by electrolytic plating. In this way, by reinforcing the seed layer by two-step plating of electroless plating and electrolytic plating, the advantage of electroless plating that even the seed layer can be plated,
The seed layer can be reinforced more flatly and reliably by utilizing the advantage of electrolytic plating that there is less unevenness and plating can be performed more smoothly.
【００１０】請求項２に記載の発明は、シード層を無電
解めっきによって補強し、しかる後、電解めっきで更に
補強することを特徴とする請求項１記載の配線形成方法
である。 これにより、先ず無電解めっきでシード層を
補強することで、シード層が不連続であっても、これを
連続させ、このように、シード層を連続させて導通を確
保した状態で、電解めっきでシード層を補強すること
で、シード層の凹凸を均一に均して、シード層の膜厚を
より平滑にすることができる。The invention according to claim 2 is the wiring forming method according to claim 1, wherein the seed layer is reinforced by electroless plating, and then further reinforced by electrolytic plating. Thus, first, by reinforcing the seed layer by electroless plating, even if the seed layer is discontinuous, it is made continuous, and in this manner, the seed layer is made continuous to ensure the continuity of electroplating. By reinforcing the seed layer with, the unevenness of the seed layer can be evened out and the film thickness of the seed layer can be made smoother.
【００１１】請求項３に記載の発明は、前記無電解めっ
きと前記電解めっきによるシード層の補強を同一のめっ
き液を使用して行うことを特徴とする請求項１または２
記載の配線形成方法である。これにより、無電解めっき
と電解めっきによるシード層の補強を連続して行うこと
ができる。しかも、無電解めっき液は、一般に分極が高
く、電解めっきのめっき液として、このような高分極の
無電解めっき液を使用することで、電解めっきでの均一
電着性を向上させることができる。The invention according to claim 3 is characterized in that the electroless plating and the seed layer are reinforced by the electrolytic plating using the same plating solution.
It is the wiring forming method described. Thus, the electroless plating and the electrolytic plating can continuously strengthen the seed layer. Moreover, the electroless plating solution generally has high polarization, and by using such a highly polarized electroless plating solution as a plating solution for electrolytic plating, it is possible to improve the uniform electrodeposition property in electrolytic plating. .
【００１２】請求項４に記載の発明は、前記電解めっき
によるシード層の補強を、逆電解、パルスまたはＰＲパ
ルスの少なくとも１種の電流波形による電解めっきによ
って行うことを特徴とする請求項１乃至３のいずれかに
記載の配線形成方法である。電解めっきにあっては、使
用するめっき液の組成と、電源として使用する電流波形
によって均一電着性とボトムアップ性（レベリング性）
が異なるが、電流波形として、逆電解、パルスまたはＰ
Ｒパルスの少なくとも１種を使用することで、シード層
をその全面に亘ってより平滑な状態にして補強すること
ができる。According to a fourth aspect of the present invention, the seed layer is reinforced by the electrolytic plating by electrolytic plating with at least one current waveform of reverse electrolysis, pulse or PR pulse. 3 is a wiring forming method. In electroplating, the composition of the plating solution used and the current waveform used as the power supply ensure uniform electrodeposition and bottom-up (leveling).
, But the current waveform is reverse electrolysis, pulse or P
By using at least one kind of R pulse, the seed layer can be made smoother and reinforced over the entire surface thereof.
【００１３】請求項５に記載の発明は、前記電解めっき
によるシード層の補強と、電解めっきによる導電体の埋
め込みを、同一のめっき液を使用し電流波形を変えて行
うことを行うことを特徴とする請求項１乃至４のいずれ
かに記載の配線形成方法である。これにより、例えば電
解めっきによるシード層の補強の際には均一電着性を高
め、電解めっきによる導電体の埋め込みの際にはボトム
アップ性を高めように電流波形を変えることで、ボイド
のない導電体の埋め込みを行うことができる。The invention according to a fifth aspect is characterized in that the seed layer is reinforced by the electrolytic plating and the conductor is embedded by the electrolytic plating by using the same plating solution and changing the current waveform. The wiring forming method according to any one of claims 1 to 4. Thus, for example, when the seed layer is reinforced by electrolytic plating, the uniform electrodeposition property is improved, and when the conductor is embedded by electrolytic plating, the current waveform is changed so as to improve the bottom-up property, thereby eliminating voids. A conductor can be embedded.
【００１４】請求項６に記載の発明は、配線用の微細窪
みを形成した基板の表面にシード層を形成し、前記シー
ド層を、逆電解、パルスまたはＰＲパルスの少なくとも
１種の電流波形による電解めっきによって補強し、前記
微細窪みの内部に電解めっきにより導電体を埋め込むこ
とを特徴とする配線形成方法である。According to a sixth aspect of the present invention, a seed layer is formed on the surface of the substrate on which fine recesses for wiring are formed, and the seed layer is formed by a current waveform of at least one of reverse electrolysis, pulse or PR pulse. It is a wiring forming method characterized by reinforcing by electrolytic plating and embedding a conductor in the fine recesses by electrolytic plating.
【００１５】請求項７に記載の発明は、前記電解めっき
によるシード層の補強と、電解めっきによる導電体の埋
め込みを、同一のめっき液を使用し電流波形を変えて行
うことを特徴とする請求項６記載の配線形成方法であ
る。The invention according to claim 7 is characterized in that the seed layer is reinforced by the electrolytic plating and the conductor is embedded by the electrolytic plating by using the same plating solution and changing the current waveform. Item 6. The wiring forming method according to item 6.
【００１６】請求項８に記載の発明は、配線用の微細窪
みを形成した基板の表面に形成したシード層を無電解め
っきによって補強する補強用無電解めっき装置と、前記
シード層を電解めっきによって補強する補強用電解めっ
き装置と、前記微細窪みの内部に電解めっきによって導
電体を埋め込む埋め込み用電解めっき装置とを備え、こ
れらの装置を一つの装置内に配置したことを特徴とする
配線形成装置である。According to the present invention, the electroless plating apparatus for reinforcement for reinforcing the seed layer formed on the surface of the substrate having the fine recesses for wiring by electroless plating, and the seed layer by electrolytic plating. A wiring forming device comprising: a reinforcing electrolytic plating device for reinforcement; and an embedding electrolytic plating device for embedding a conductor in the fine recess by electrolytic plating, and these devices are arranged in one device. Is.
【００１７】請求項９に記載の発明は、前記補強用無電
解めっき装置、補強用電解めっき装置及び埋め込み用電
解めっき装置として、同一の基板処理部を使用したこと
を特徴とする請求項６記載の配線形成装置である。これ
により、単一の基板処理部（めっきセル）を利用して、
設置面積の縮小と装置の簡略化を図ることができる。According to a ninth aspect of the present invention, the same substrate processing section is used as the reinforcing electroless plating apparatus, the reinforcing electrolytic plating apparatus, and the embedding electrolytic plating apparatus. Wiring forming device. As a result, using a single substrate processing unit (plating cell),
The installation area can be reduced and the device can be simplified.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。図１は、本発明の実施の形態の配線形成装
置の平面配置図を示す。この配線形成装置は、同一設備
内に、内部に複数の基板Ｗを収納する２基のロード・ア
ンロード部１０と、一つの基板処理部（即ち、一つのめ
っきセル）１２を共有した補強用無電解めっき装置１
４、補強用電解めっき装置１６及び埋め込み用電解めっ
き装置１８と、ロード・アンロード部１０と基板処理部
１２との間で基板Ｗの受け渡しを行う搬送ロボット２０
とを収納して構成されている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. FIG. 1 shows a plan layout view of a wiring forming apparatus according to an embodiment of the present invention. This wiring forming apparatus is a reinforcement for sharing two load / unload sections 10 for accommodating a plurality of substrates W and one substrate processing section (that is, one plating cell) 12 in the same equipment. Electroless plating device 1
4. Reinforcement electroplating apparatus 16 and embedding electroplating apparatus 18, and a transfer robot 20 that transfers the substrate W between the load / unload unit 10 and the substrate processing unit 12.
It is configured to store and.
【００１９】補強用無電解めっき装置１４は、共通の基
板処理部１２と第１のめっき液供給ヘッド２２を有して
いる。また、補強用電解めっき装置１６は、共通の基板
処理部１２と第２のめっき液供給ヘッド２４を、埋め込
み用電解めっき装置１８は、共通の基板処理部１２と第
３のめっき液供給ヘッド２６とをそれぞれ有している。
そして、第１のめっき液供給ヘッド２２は、回転軸２８
を中心に揺動する揺動アーム３０の先端に保持され、基
板処理部１２と退避部３２との間を揺動するとともに、
上下動するように構成されている。また、第２のめっき
液供給ヘッド２４は、回転軸３４を中心に揺動する揺動
アーム３６の先端に保持され、基板処理部１２と退避部
３８との間を揺動するとともに、上下動するように構成
され、第３のめっき液供給ヘッド２６は、回転軸３４を
中心に揺動する揺動アーム４０の先端に保持され、基板
処理部１２と退避部４２との間を揺動するとともに、上
下動するように構成されThe reinforcing electroless plating apparatus 14 has a common substrate processing section 12 and a first plating solution supply head 22. The reinforcing electrolytic plating apparatus 16 has the common substrate processing unit 12 and the second plating solution supply head 24, and the embedding electrolytic plating apparatus 18 has the common substrate processing unit 12 and the third plating solution supply head 26. And have respectively.
Then, the first plating solution supply head 22 has the rotating shaft 28.
It is held at the tip of a swing arm 30 that swings about the center of the swing arm, swings between the substrate processing unit 12 and the retreat unit 32, and
It is configured to move up and down. The second plating solution supply head 24 is held at the tip of a swing arm 36 that swings around the rotation shaft 34, swings between the substrate processing unit 12 and the retreat unit 38, and moves up and down. The third plating solution supply head 26 is held by the tip of the swing arm 40 that swings about the rotation shaft 34, and swings between the substrate processing unit 12 and the retreat unit 42. Is configured to move up and down with
【００２０】更に、基板処理部１２の側方には、プレコ
ート・回収アーム４４と、純水やイオン水等の薬液を基
板Ｗに向けて噴射する固定ノズル４６が配置されてい
る。固定ノズル４６は複数設置され、その内の一つを純
水供給用に用いている。Further, a precoat / recovery arm 44 and a fixed nozzle 46 for injecting a chemical liquid such as pure water or ion water toward the substrate W are disposed on the side of the substrate processing section 12. A plurality of fixed nozzles 46 are installed, and one of them is used for supplying pure water.
【００２１】図２は、基板処理部１２の上方に第１のめ
っき液供給ヘッド２２が位置して、補強用無電解めっき
装置１４を構成した状態を示す。図２に示すように、基
板処理部１２は、被めっき面を上にして基板Ｗを保持す
る基板保持部５０と、基板保持部５０の上方に配置され
て基板保持部５０の周縁部を囲むように設置されるカソ
ード５２と、カソード５２の上方を覆うように取付けら
れる環状のシール材５４とが備えられている。更に基板
保持部５０の周囲を囲んで、処理中に用いる各種薬液の
飛散を防止する有底筒状の飛散防止カップ５６が配置さ
れている。基板Ｗの基板保持部５０への固定は、基板保
持部５０に設けた図示しない爪によって行っても良い
し、真空吸着によって行っても良い。FIG. 2 shows a state in which the first plating solution supply head 22 is located above the substrate processing section 12 to configure the reinforcing electroless plating apparatus 14. As shown in FIG. 2, the substrate processing unit 12 surrounds the substrate holding unit 50 that holds the substrate W with the surface to be plated facing upward and the peripheral portion of the substrate holding unit 50 that is arranged above the substrate holding unit 50. The cathode 52 thus installed is provided with an annular seal member 54 attached so as to cover the cathode 52. Further, a bottomed cylindrical scattering prevention cup 56 is arranged surrounding the periphery of the substrate holding unit 50 to prevent scattering of various chemicals used during processing. The substrate W may be fixed to the substrate holding unit 50 by a nail (not shown) provided in the substrate holding unit 50 or by vacuum suction.
【００２２】カソード５２とシール材５４は、上下動不
能で且つ基板保持部５０と一体に回転するように構成さ
れている。そして基板保持部５０がめっき位置Ｂまで上
昇した時に、この基板保持部５０で保持した基板Ｗの周
縁部にカソード５２の先端が押付けられて通電し、同時
にシール材５４の先端が基板Ｗの周縁部上面に圧接し、
ここを水密的にシールして、基板Ｗの上面（被めっき
面）に供給されためっき液が基板Ｗの端部から染み出す
のを防止するとともに、めっき液がカソード５２を汚染
することを防止している。The cathode 52 and the sealing material 54 are so constructed that they cannot move up and down and rotate integrally with the substrate holding portion 50. Then, when the substrate holding part 50 rises to the plating position B, the tip of the cathode 52 is pressed against the peripheral edge of the substrate W held by the substrate holding part 50 to energize, and at the same time, the tip of the sealing material 54 is the peripheral edge of the substrate W. Pressure contact with the top of the part,
This is watertightly sealed to prevent the plating solution supplied to the upper surface (the surface to be plated) of the substrate W from seeping out from the end portion of the substrate W and to prevent the plating solution from contaminating the cathode 52. is doing.
【００２３】基板保持部５０は、下方の基板受渡位置Ａ
と、上方のめっき位置Ｂと、中間の前処理・洗浄位置Ｃ
との間を昇降し、モータＭによって任意の速度で前記カ
ソード５２及びシール材５４と一体に回転するように構
成されている。基板保持部５０がめっき位置Ｂまで上昇
した際に基板保持部５０で保持された基板Ｗの周縁部に
カソード５２の先端とシール材５４の先端とが当接する
ようになっている。The substrate holding portion 50 is provided at the lower substrate transfer position A.
And an upper plating position B and an intermediate pretreatment / cleaning position C
Between the cathode 52 and the seal member 54 at a desired speed by the motor M. When the substrate holding part 50 moves up to the plating position B, the tip of the cathode 52 and the tip of the sealing material 54 come into contact with the peripheral edge of the substrate W held by the substrate holding part 50.
【００２４】プレコート・回収アーム４４は、３つのノ
ズル（１つがプレコート液吐出用のプレコートノズル５
８、それ以外の２つのノズルがめっき液回収用のめっき
液回収ノズル６０ａ，６０ｂ）を具備し、これらが支持
軸６２を中心に旋回・上下動できるように構成されてい
る。図２では、図示の都合上、各ノズル５８，６０ａ，
６０ｂを別々に記載しているが、実際は図１に示すよう
にプレコート・回収アーム４４に一体に取付けられてい
る。The precoat / collection arm 44 has three nozzles (one of which is the precoat nozzle 5 for discharging the precoat liquid).
No. 8, two other nozzles are provided with plating solution recovery nozzles 60a, 60b) for recovering the plating solution, and these are configured so as to be able to swivel and move up and down around the support shaft 62. In FIG. 2, for convenience of illustration, the nozzles 58, 60a,
Although 60b is described separately, it is actually attached integrally to the precoat / recovery arm 44 as shown in FIG.
【００２５】第１のめっき液供給ヘッド２２は、無電解
めっき用の無電解めっき液を多数の噴射ノズル６６から
シャワー状に分散させて噴射するものであり、揺動アー
ム３０の先端に取付けられている。そして、第１のめっ
き液供給ヘッド２２の内部にランプヒータ６８が一体に
設置されている。即ち、例えば半径の異なる複数のリン
グ状のランプヒータ６８を同心円状に配置し、ランプヒ
ータ６８の間の隙間から多数の噴射ノズル６６をリング
状に開口させている。なおランプヒータ６８は、渦巻状
の一本のランプヒータであっても良いし、それ以外の各
種構造・配置のランプヒータで構成しても良い。これに
より、各噴射ノズル６６から基板Ｗの被めっき面上に無
電解めっき液をシャワー状に略均等に供給でき、またラ
ンプヒータ６８によって基板Ｗの加熱・保温も容易且つ
迅速・均一に行える。The first plating solution supply head 22 is for spraying the electroless plating solution for electroless plating in a shower shape from a large number of spray nozzles 66, and is attached to the tip of the swing arm 30. ing. The lamp heater 68 is integrally installed inside the first plating solution supply head 22. That is, for example, a plurality of ring-shaped lamp heaters 68 having different radii are arranged concentrically, and a large number of injection nozzles 66 are opened in a ring shape from the gaps between the lamp heaters 68. The lamp heater 68 may be a single spiral lamp heater, or may be a lamp heater having various other structures and arrangements. As a result, the electroless plating solution can be supplied from the spray nozzles 66 onto the surface of the substrate W to be plated substantially evenly, and the lamp heater 68 can easily, quickly and uniformly heat and heat the substrate W.
【００２６】図３は、基板処理部１２の上方に第２のめ
っき液供給ヘッド２４（または第３のめっき液供給ヘッ
ド２６）が位置して、補強用電解めっき装置１６（また
は埋め込み用電解めっき装置１８）を構成した状態を示
している。なお、補強用電解めっき装置１６と埋め込み
用電解めっき装置１８は、使用するめっき液が異なるだ
けで、構成は同じであるので、ここで補強用電解めっき
装置１６についてのみ説明する。In FIG. 3, the second plating solution supply head 24 (or the third plating solution supply head 26) is located above the substrate processing section 12, and the electrolytic plating apparatus 16 for reinforcement (or electrolytic plating for embedding) is provided. The device 18) is shown as configured. The reinforcing electrolytic plating apparatus 16 and the embedding electrolytic plating apparatus 18 have the same configuration except that the plating solution used is different. Therefore, only the reinforcing electrolytic plating apparatus 16 will be described here.
【００２７】第２のめっき液供給ヘッド２４は、ハウジ
ング７０の下面にアノード７２を取付け、またアノード
７２の下面にアノード７２の全面を覆う保水性材料から
なるめっき液含浸材７４を取付け、さらにハウジング７
０の上部にめっき液供給管７６を接続して構成されてい
る。アノード７２には多数のめっき液供給口７２ａが設
けられ、これによってめっき液供給管７６からめっき液
供給口７２ａを通してめっき液含浸材７４にめっき液が
供給される。めっき液含浸材７４は、アノード７２の表
面にめっき液の作用によって形成されるブラックフィル
ムが、乾燥したり酸化したりして、アノード７２から脱
落してパーティクルとなるのを防止するため、常にアノ
ード７２の表面を湿潤させておくために設けられてい
る。めっき液供給管７６からめっき液供給口７２ａとめ
っき液含浸材７４を介してめっき液を供給する機構によ
って基板処理液供給機構が構成される。In the second plating solution supply head 24, an anode 72 is attached to the lower surface of the housing 70, and a plating solution impregnating material 74 made of a water-retaining material is attached to the lower surface of the anode 72. 7
The plating solution supply pipe 76 is connected to the upper part of 0. The anode 72 is provided with a large number of plating solution supply ports 72a, whereby the plating solution is supplied from the plating solution supply pipe 76 to the plating solution impregnating material 74 through the plating solution supply port 72a. The plating solution impregnating material 74 prevents the black film formed on the surface of the anode 72 by the action of the plating solution from falling off from the anode 72 and becoming particles due to drying or oxidation. It is provided to keep the surface of 72 wet. A mechanism for supplying the plating solution from the plating solution supply pipe 76 through the plating solution supply port 72a and the plating solution impregnating material 74 constitutes a substrate processing solution supply mechanism.
【００２８】第２のめっき液供給ヘッド２４は、基板保
持部５０がめっき位置Ｂにあるときに基板保持部５０で
保持された基板Ｗとめっき液含浸材７４との隙間が、例
えば０．５〜３．０ｍｍ程度となるまで下降し、この状
態でめっき液供給管７６からめっき液を供給してめっき
液含浸材７４にめっき液を含ませながら、基板Ｗの被め
っき面とアノード７２との間にめっき液を満たして、被
めっき面にめっきを行う。In the second plating solution supply head 24, when the substrate holding section 50 is at the plating position B, the gap between the substrate W held by the substrate holding section 50 and the plating solution impregnating material 74 is, for example, 0.5. To about 3.0 mm, and in this state, the plating solution is supplied from the plating solution supply pipe 76 to contain the plating solution in the plating solution impregnated material 74, and the surface to be plated of the substrate W and the anode 72 are separated. The surface to be plated is plated by filling a plating solution between them.
【００２９】次に、この配線形成装置による配線形成例
について、更に図４乃至図１０を参照して説明する。先
ず第１の例では、補強用無電解めっき装置１４に使用す
るめっき液、及び補強用電解めっき装置１６に使用する
めっき液として、その組成に２価の銅イオン、銅イオン
の錯化剤、還元剤及びｐＨ調整剤とを有するめっき液
（無電解めっき液）を使用する。この２価の銅イオンの
供給源としては、硫酸銅、塩化銅、硝酸銅などの第２銅
塩を用いることができ、例えば０．００１〜１ｍｏｌ／
Ｌの濃度範囲で添加することができる。銅イオンの錯化
剤としては、酒石酸、グルコン酸等のオキシカルボン酸
及びそれらの塩、エチレンジアミン四酢酸、イミノ二酢
酸等のアミノカルボン酸及びそれらの塩、クアドロー
ル、トリエタノールアミン等のアルカノールアミン及び
それらの塩等を用いることができ、例えば０．００１〜
５ｍｏｌ／Ｌの濃度範囲で添加することができる。還元
剤としては、グリオキシル酸、ホルムアルデヒド等を用
いることができ、例えば０．００１〜１ｍｏｌ／Ｌの濃
度範囲で添加することができる。ｐＨ調整剤は、アンモ
ニア、水酸化テトラメチルアンモニウム等を用いること
ができ、めっき液のｐＨが、例えば６〜１４になるよう
に添加される。このめっき液の処理温度は、２０〜７０
℃程度が好ましく、必要に応じて、公知の無電解銅めっ
きの安定剤や界面活性剤を含有させることができる。補
強用電解めっき装置１６に使用するめっき液として、そ
の組成に２価の銅イオン、錯化剤及びｐＨ調整剤とを有
するめっき液、例えばピロりん酸銅を１５ｇ／Ｌ、ピロ
りん酸を９２ｇ／Ｌ含み、コリン等のｐＨ調整剤を添加
してｐＨを９．５にした、均一導電性に優れたピロりん
酸銅めっき液を用いる。このめっき液としては、ピロり
ん酸銅めっき液の他に硫酸銅を溶解して２価の銅イオン
を得るようした硫酸銅めっき液、スルホン酸銅を溶解し
て２価の銅イオンを得るようしたスルホン酸銅めっき液
等、任意のものを使用することもできる。Next, an example of wiring formation by this wiring forming apparatus will be described with reference to FIGS. 4 to 10. First, in the first example, a plating solution used in the reinforcing electroless plating apparatus 14 and a plating solution used in the reinforcing electrolytic plating apparatus 16 have divalent copper ions in the composition and a complexing agent of copper ions, A plating solution (electroless plating solution) having a reducing agent and a pH adjusting agent is used. As a supply source of this divalent copper ion, a cupric salt such as copper sulfate, copper chloride or copper nitrate can be used, and for example, 0.001 to 1 mol /
It can be added in the L concentration range. As the complexing agent of copper ions, tartaric acid, oxycarboxylic acids such as gluconic acid and salts thereof, ethylenediaminetetraacetic acid, aminocarboxylic acids such as iminodiacetic acid and salts thereof, quadrol, alkanolamines such as triethanolamine and the like. Those salts etc. can be used, for example, 0.001-
It can be added in a concentration range of 5 mol / L. As the reducing agent, glyoxylic acid, formaldehyde, or the like can be used, and for example, it can be added in a concentration range of 0.001 to 1 mol / L. Ammonia, tetramethylammonium hydroxide or the like can be used as the pH adjuster, and is added so that the pH of the plating solution is, for example, 6-14. The processing temperature of this plating solution is 20 to 70.
The temperature is preferably about 0 ° C., and if necessary, a known electroless copper plating stabilizer or surfactant can be added. As a plating solution used in the reinforcing electrolytic plating apparatus 16, a plating solution having a divalent copper ion, a complexing agent and a pH adjuster in its composition, for example, 15 g / L of copper pyrophosphate and 92 g of pyrophosphoric acid. A copper pyrophosphate plating solution containing / L and having a pH of 9.5 by adding a pH adjusting agent such as choline and having excellent uniform conductivity is used. As this plating solution, in addition to the copper pyrophosphate plating solution, copper sulfate is dissolved to obtain divalent copper ions, and copper sulfonate is dissolved to obtain divalent copper ions. Any of the above-mentioned copper sulfonate plating solutions can be used.
【００３０】ここで、ピロりん酸銅めっき液は、ピロり
ん酸銅をベースとして、これにピロりん酸等の錯化剤が
添加されているため、通常の硫酸銅めっき液よりも分極
が高い。ここで、分極が高いとは、電流密度の変化に対
する電圧の変化の比が大きいこと、つまり電位の振れに
対して電流密度の変動が少ないことを意味する。これに
よって、電解めっき液として使用する時、例えシード層
６（図１６参照）の膜厚に差があり、通電時に電位差が
生じても、電流密度の変動を少なくすることができる。
このため、析出電位を上昇させ、電着性の均一性を向上
させて、通常の硫酸銅めっき液では析出が困難だったシ
ード層の薄い部分にもめっきが析出する。The copper pyrophosphate plating solution is based on copper pyrophosphate, and a complexing agent such as pyrophosphoric acid is added to the copper pyrophosphate plating solution, so that the copper pyrophosphate plating solution has higher polarization than the ordinary copper sulfate plating solution. . Here, high polarization means that the ratio of the change in voltage to the change in current density is large, that is, the change in current density with respect to the fluctuation of the potential is small. Accordingly, when used as an electrolytic plating solution, even if the seed layer 6 (see FIG. 16) has a different film thickness and a potential difference occurs during energization, fluctuations in current density can be reduced.
Therefore, the deposition potential is increased, the uniformity of the electrodeposition property is improved, and the plating is deposited even on the thin portion of the seed layer, which was difficult to deposit with the ordinary copper sulfate plating solution.
【００３１】また、埋め込み用電解めっき装置１８に使
用するめっき液として、硫酸銅の濃度が高く、硫酸の濃
度が低い、例えば硫酸銅１００〜３００ｇ／Ｌ（好まし
くは２２５ｇ／Ｌ）、硫酸１０〜１００ｇ／Ｌ（好まし
くは５５ｇ／Ｌ）程度の組成を有し、レベリング性を向
上させた添加剤を含有したレベリング性に優れた硫酸銅
めっき液を用いている。As a plating solution used in the electroplating apparatus 18 for embedding, the concentration of copper sulfate is high and the concentration of sulfuric acid is low, for example, copper sulfate 100 to 300 g / L (preferably 225 g / L), sulfuric acid 10 to 10. A copper sulfate plating solution having a composition of about 100 g / L (preferably 55 g / L) and containing an additive having improved leveling property and excellent in leveling property is used.
【００３２】このレベリング性を向上させる効果のある
添加剤は、例えば有機窒素系化合物であり、具体的に
は、フェナチジン系化合物、フタロシアニン系化合物、
ポリエチレンイミン、ポリベンジルエチレンイミンなど
のポリアルキレンイミンおよびその誘導体、Ｎ−染料置
換体化合物などのチオ尿素誘導体、フェノサフラニン、
サフラニンアゾナフトール、ジエチルサフラニンアゾフ
ェノール、ジメチルサフラニンジメチルアニリンなどの
サフラニン化合物、ポリエピクロルヒドリンおよびその
誘導体、チオフラビン等のフェニルチアゾニウム化合
物、アクリルアミド、プロピルアミド、ポリアクリル酸
アミドなどのアミド類等の含窒素化合物を挙げることが
できる。The additive having the effect of improving the leveling property is, for example, an organic nitrogen compound, specifically, a phenatidine compound, a phthalocyanine compound,
Polyalkyleneimines such as polyethyleneimine and polybenzylethyleneimine and their derivatives, thiourea derivatives such as N-dye substitute compounds, phenosafranine,
Safranine azonaphthol, diethylsafranine azophenol, safranine compounds such as dimethylsafranine dimethylaniline, polyepichlorohydrin and its derivatives, phenylthiazonium compounds such as thioflavin, nitrogen-containing amides such as acrylamide, propylamide, polyacrylic acid amide, etc. A compound can be mentioned.
【００３３】ここで、レベリング性とは、表面平坦度に
対する性質を意味し、レベリング性に優れためっき液を
使用してめっきを行うと、微細窪みの入口での膜成長が
遅くなり、これによって、ボイドの発生を防止しつつ、
微細窪み内に銅を均一に隙間なく充填し、しかも表面を
より平坦にすることができる。Here, the leveling property means a property with respect to the surface flatness, and when plating is performed using a plating solution having excellent leveling property, the film growth at the entrance of the fine recess becomes slow, which causes , While preventing the occurrence of voids
Copper can be uniformly filled in the fine depressions without any gap, and the surface can be made flatter.
【００３４】先ず、表面にシード層６（図１６参照）を
形成した基板Ｗをロード・アンロード部１０から搬送ロ
ボット２０で取出し、被めっき面を上向きにした状態で
基板処理部１２の基板保持部５０に設置する。このとき
基板保持部５０は、基板受渡位置Ａ（図２参照）にあ
る。First, the substrate W having the seed layer 6 (see FIG. 16) formed on its surface is taken out from the loading / unloading section 10 by the transfer robot 20, and the substrate is held in the substrate processing section 12 with the surface to be plated facing upward. It is installed in the section 50. At this time, the substrate holding unit 50 is at the substrate transfer position A (see FIG. 2).
【００３５】次に、基板保持部５０を、めっき位置Ｂま
で上昇させる。すると、前述のように、基板Ｗの周縁部
にカソード５２の先端とシール材５４の先端が当接して
基板Ｗの周縁部がシールされる。なお、このめっきは無
電解めっきなので、カソード５２による通電は行わな
い。Next, the substrate holder 50 is raised to the plating position B. Then, as described above, the tip of the cathode 52 and the tip of the sealing material 54 come into contact with the peripheral edge of the substrate W to seal the peripheral edge of the substrate W. Since this plating is electroless plating, the cathode 52 does not energize.
【００３６】そして退避部３２にあった第１のめっき液
供給ヘッド２２を旋回させて基板Ｗの上部に移動させ、
前述の組成のめっき液（無電解めっき液）を噴出してシ
ャワー状に被めっき面上に均一に降り注ぐ。基板Ｗは、
シール材５４によって被めっき面の周囲が囲まれている
ので、注入しためっき液は全て被めっき面上に保持され
る。その量は基板Ｗ表面に１ｍｍ厚（約３０ｍＬ）とな
る程度の少量でも良い。供給するめっき液はめっき反応
に最適な温度（例えば６０℃）に予め加熱・保温してあ
るが、同時にランプヒータ６８によって基板Ｗを加熱・
保温することで、基板Ｗ上に供給された後のめっき液の
保温を行う。無電解めっきは、その温度によってめっき
状態が変動するので、この実施の形態のように、ランプ
ヒータ６８を設けて最適な温度に保温することで、良好
なめっき処理が行える。基板Ｗ上に溜めためっき液の量
は少ないので、ランプヒータ６８による保温は容易に行
える。Then, the first plating solution supply head 22 in the retreat section 32 is swung to move it to the upper part of the substrate W,
The plating solution (electroless plating solution) having the above-described composition is jetted and poured in a shower shape uniformly on the surface to be plated. The substrate W is
Since the periphery of the surface to be plated is surrounded by the sealing material 54, all of the injected plating solution is retained on the surface to be plated. The amount may be as small as 1 mm (about 30 mL) on the surface of the substrate W. The supplied plating solution is preheated and kept at an optimum temperature (for example, 60 ° C.) for the plating reaction. At the same time, the lamp heater 68 heats the substrate W.
By maintaining the temperature, the temperature of the plating solution after being supplied onto the substrate W is maintained. In electroless plating, the plating state varies depending on the temperature, and therefore, by providing the lamp heater 68 and keeping the temperature at the optimum temperature as in this embodiment, good plating can be performed. Since the amount of the plating solution stored on the substrate W is small, the lamp heater 68 can easily keep the temperature.
【００３７】なお、被めっき面を均一にめっき液に濡ら
すために、めっき液を降り注いだ直後にモータＭによっ
て基板Ｗを瞬時回転させるが、その後は基板Ｗを静止し
た状態で被めっき面のめっきを行うことが被めっき面全
体の均一なめっきのために好ましい。具体的には、基板
Ｗを１ｓｅｃだけ１００ｒｐｍ以下で回転して被めっき
面上をめっき液で均一に濡らし、その後静止させて１ｍ
ｉｎ間無電解めっきを行う。In order to uniformly wet the surface to be plated with the plating solution, the substrate W is momentarily rotated by the motor M immediately after pouring the plating solution. After that, the substrate W is stationary while the plating of the surface to be plated is performed. Is preferable for uniform plating over the entire surface to be plated. Specifically, the substrate W is rotated at 100 rpm or less for 1 sec to evenly wet the surface to be plated with the plating solution, and then left stationary for 1 m.
Perform electroless plating during in.
【００３８】これによって、予めスパッタリングなどに
よって形成したシード層６を補強するのであるが、この
時の概要を図４に示す。つまり、微細配線化が進み、配
線幅がより狭く、かつアスペスト比（幅に対する深さの
比）がより高くなるに従って、図４（ａ）に示すよう
に、スパッタリング等で形成されるシード層６が溝底部
まで均一に届かなくなり、シード層６の膜厚が溝底部に
向かって徐々に薄くなったり、また溝側面や底面の一部
に析出せずにシード層６が途中で途切れて不連続になっ
たりしても、無電解めっきは、反応種の供給律速がめっ
きを支配するため、下地（シード層）の形状をなぞった
形状に成膜される。この結果、ホールや溝内部における
めっきの付き廻りは良く、このシード層６とこの時に成
膜される補強シード層６ａで連続したシード層が形成さ
れる。As a result, the seed layer 6 previously formed by sputtering or the like is reinforced, and the outline at this time is shown in FIG. That is, as finer wiring advances, the wiring width becomes narrower, and the aspest ratio (ratio of depth to width) becomes higher, as shown in FIG. 4A, the seed layer 6 formed by sputtering or the like. Do not reach the bottom of the groove evenly, the film thickness of the seed layer 6 gradually decreases toward the bottom of the groove, and the seed layer 6 does not deposit on part of the side surface or bottom of the groove, and the seed layer 6 is discontinued in the middle. However, in the electroless plating, the rate-determining supply of the reactive species dominates the plating, and thus the film is formed in a shape that traces the shape of the base (seed layer). As a result, the plating is well distributed inside the holes and grooves, and a continuous seed layer is formed by this seed layer 6 and the reinforcing seed layer 6a formed at this time.
【００３９】上記めっき処理完了後、第１のめっき液供
給ヘッド２２を退避部３２に戻し、次にプレコート・回
収アーム４４を退避位置から基板Ｗ上に移動して下降さ
せ、めっき液回収ノズル６０ａから基板Ｗ上のめっき液
の残液を回収して再び退避位置へ戻す。そして基板保持
部５０をめっき位置Ｂから前処理・洗浄位置Ｃへ下降さ
せ、基板Ｗの回転を開始して純水用の固定ノズル４６か
ら純水を供給して被めっき面を冷却すると同時にめっき
液を希釈化・洗浄することで無電解めっきを停止させ、
同時にシール材５４とカソード５２とを水洗し、固定ノ
ズル４６からの純水の供給を停止して基板保持部５０の
回転速度を増加し、スピン乾燥させる。After the completion of the above plating treatment, the first plating solution supply head 22 is returned to the retreat section 32, and then the precoat / recovery arm 44 is moved from the retracted position onto the substrate W and lowered, and the plating solution recovery nozzle 60a. The residual plating solution on the substrate W is recovered from the above and returned to the retracted position again. Then, the substrate holder 50 is lowered from the plating position B to the pretreatment / cleaning position C, the rotation of the substrate W is started, pure water is supplied from the fixed nozzle 46 for pure water to cool the surface to be plated, and at the same time the plating is performed. Stop electroless plating by diluting and washing the solution,
At the same time, the sealant 54 and the cathode 52 are washed with water, the supply of pure water from the fixed nozzle 46 is stopped, the rotation speed of the substrate holding unit 50 is increased, and spin drying is performed.
【００４０】次に退避位置にあったプレコート・回収ア
ーム４４を、基板Ｗの上面に向けて旋回させて下降さ
せ、基板保持部５０を回転させながら、プレコートノズ
ル５８から、例えば界面活性剤からなるプレコート液を
基板Ｗの被めっき面に吐出し、被めっき面全体に行き渡
らせる。次にプレコート・回収アーム４４を退避位置へ
戻し、基板保持部５０の回転速度を増して遠心力により
被めっき面のプレコート液を振り切って乾燥させる。Next, the precoat / recovery arm 44 in the retracted position is swung down toward the upper surface of the substrate W and lowered, and while the substrate holding part 50 is rotated, the precoat nozzle 58 is made of, for example, a surfactant. The precoat liquid is discharged onto the surface to be plated of the substrate W and spreads over the entire surface to be plated. Next, the precoat / recovery arm 44 is returned to the retracted position, the rotation speed of the substrate holding unit 50 is increased, and the precoat liquid on the surface to be plated is shaken off and dried by centrifugal force.
【００４１】次に、基板保持部５０の回転を停止（若し
くは低速化）し、めっき位置Ｂまで上昇させる。する
と、前述のように基板Ｗの周縁部にカソード５２の先端
とシール材５４の先端が当接して、通電可能になると同
時に基板Ｗの周縁部が水密的にシールされる。Next, the rotation of the substrate holding part 50 is stopped (or slowed down), and the substrate holding part 50 is raised to the plating position B. Then, as described above, the tip of the cathode 52 and the tip of the sealing material 54 come into contact with the peripheral edge of the substrate W to enable energization, and at the same time, the peripheral edge of the substrate W is watertightly sealed.
【００４２】そして、退避部３８にあった第２のめっき
液供給ヘッド２４を旋回させて基板Ｗの上部に移動さ
せ、基板Ｗ上の前述の位置まで下降させる。第２のめっ
き液供給ヘッド２４の下降が完了した時点で、めっき液
供給管７６から前述のめっき液（第１の例における無電
解めっき液または第２の例におけるピロりん酸銅めっき
液）を、例えば５０ｍＬ供給してアノード７２を通して
めっき液含浸材７４に供給し、めっき液含浸材７４と基
板Ｗの被めっき面の間に形成される隙間にめっき液を充
填してめっき電流を流す。これによって銅を析出させて
シード層６（図１６参照）を更に補強する。Then, the second plating solution supply head 24 in the retreat portion 38 is swung to move it to the upper portion of the substrate W, and is lowered to the above-mentioned position on the substrate W. When the lowering of the second plating solution supply head 24 is completed, the above-described plating solution (the electroless plating solution in the first example or the copper pyrophosphate plating solution in the second example) is supplied from the plating solution supply pipe 76. For example, 50 mL is supplied and supplied to the plating solution impregnated material 74 through the anode 72, the gap formed between the plating solution impregnated material 74 and the surface to be plated of the substrate W is filled with the plating solution, and a plating current is passed. This deposits copper to further reinforce the seed layer 6 (see FIG. 16).
【００４３】この時の概要を図４に示す。前述のよう
に、無電解めっきにより、図４（ｂ）に示すように、こ
のシード層６と無電解めっきで成膜される補強シード層
６ａで連続したシード層が形成されるが、この補強シー
ド層６ａは、シード層６の凹凸を強調しまい、表面にか
なり大きな凹凸を有したものとなり、この状態で、電解
めっきでボイドを発生させることなく銅等を埋め込むこ
とが困難となる。そこで、連続したシード層により通電
を確保しつつ、電解めっきでシード層６を更に補強する
ことにより、図４（ｃ）に示すように、補強シード層６
ａの有する凹凸を均一に均す。つまり、無電解めっきで
成膜される補強シード層６ａと、電解めっきによる銅の
析出により、表面が平坦な複合シード層６ｂを形成し、
この複合シード層６ｂでシード層６を補強する。The outline at this time is shown in FIG. As described above, electroless plating forms a continuous seed layer with the seed layer 6 and the reinforcing seed layer 6a formed by electroless plating as shown in FIG. 4B. The seed layer 6a emphasizes the unevenness of the seed layer 6 and has a considerably large unevenness on the surface. In this state, it is difficult to embed copper or the like without generating voids in the electrolytic plating. Then, the seed layer 6 is further reinforced by electroplating while ensuring the electric conduction by the continuous seed layer, and as shown in FIG.
The unevenness of a is evenly leveled. That is, a reinforcing seed layer 6a formed by electroless plating and a composite seed layer 6b having a flat surface are formed by depositing copper by electrolytic plating,
The seed layer 6 is reinforced by the composite seed layer 6b.
【００４４】この時、電流電源として、逆電解、パルス
またはＰＲパルスを用いることが好ましく、特にＰＲパ
ルスを用いることで、より平坦なシード補強を行えるこ
とが確かめられている。At this time, it is preferable to use reverse electrolysis, pulse or PR pulse as the current power source, and it has been confirmed that particularly flat pulse reinforcement can be performed by using the PR pulse.
【００４５】この電解めっきの電源電流に用いられるＰ
Ｒパルスの波形の例を図５〜図１０に示す。なお、同図
において、縦軸に電流密度（Ａ／ｄｍ２）を、横軸に時
間（ｔ）をとり、また横軸より上は正電流（ＯＮ）の場
合を、下は逆電流（Ｒ）の場合を示している。即ち、図
５（ａ）〜（ｃ）は、単純な波形の正電流と逆電流を周
期的に連続的させたり、電流を逆転する際に所定の休止
（ＯＦＦ）を与えるようにしたもので、図６（ａ）及び
（ｂ）は、正電流または逆電流の一方の電流を段階的に
変化させるようにしたものである。また、図７は、交流
波パルス（交流電流に直流を印加したもの）を使用した
ものであり、図８は、三角形パルスを使用したものであ
る。更に、図９は、電流値のピークが一気に上がって徐
々に低下するか、または電流値のピークが徐々に上がっ
て一気に低下する、いわゆる方形波微分パルスを使用し
たもので、図１０は、前述の各波形を任意に組み合わせ
たものである。P used for the power supply current of this electrolytic plating
Examples of R pulse waveforms are shown in FIGS. In the figure, the vertical axis represents current density (A / dm2), the horizontal axis represents time (t), and the upper part of the horizontal axis represents a positive current (ON) and the lower part represents a reverse current (R). Shows the case. That is, FIGS. 5 (a) to 5 (c) are such that a positive current and a reverse current having a simple waveform are periodically made continuous, or a predetermined pause (OFF) is given when the current is reversed. 6 (a) and 6 (b), one of the positive current and the reverse current is changed stepwise. Further, FIG. 7 uses an AC wave pulse (a direct current is applied to an AC current), and FIG. 8 uses a triangular pulse. Further, FIG. 9 uses a so-called square wave differential pulse in which the peak of the current value rises at once and gradually decreases, or the peak of the current value gradually rises and drops at once, and FIG. It is a combination of each waveform of.
【００４６】このように、電流電源としてＰＲパルスを
使用して電解めっきを行うことで、より平坦なシード補
強を行えるのは、以下の理由によるものと考えられる。It is considered that the flattening of the seed can be achieved by the electrolytic plating using the PR pulse as the current power source for the following reason.
【００４７】パルスめっきにおける物質移動
電解液中でめっきが進行している条件では、電極界面で
金属イオンの濃度低下が起こる。パルス電解の最も重要
な利点に、パルス印加時に形成される拡散層が休止時及
び逆電解時に緩和し、従って最適条件下では副反応（亜
酸化物や水酸化物等）を生じることなしに高い電流密度
が得られる点が挙げられる。つまり、パルスを用いるこ
とにより直流電解の場合に比べ１００倍程度まで電流密
度を上げることができ、より高い活性化過電圧（析出さ
せるための電圧、単に過電圧とも言う）でめっきを行う
ことができる。また攪拌、振動、熱その他対流を起こす
ことにより、更に高い電流密度を得ることができる。Under the condition that the plating is progressing in the mass transfer electrolytic solution in the pulse plating, the concentration of metal ions is lowered at the electrode interface. The most important advantage of pulse electrolysis is that the diffusion layer formed during pulse application relaxes at rest and during reverse electrolysis, and is therefore high under optimal conditions without causing side reactions (such as suboxides and hydroxides). It is possible to obtain the current density. That is, by using the pulse, the current density can be increased up to about 100 times that in the case of direct current electrolysis, and plating can be performed with a higher activation overvoltage (voltage for depositing, also referred to simply as overvoltage). Further, a higher current density can be obtained by causing agitation, vibration, heat or other convection.
【００４８】パルスめっきにおける核発生・成長
パルスめっきにおける巨視的な電析形態は、物質移動現
象に依存するが、微視的な特性（結晶粒径、優先配向な
ど）を支配するのは核発生・成長過程だと考えられる。
核成長速度は過電圧にあまり影響を受けないが、核発生
速度は過電圧の増加と共に上昇する。その結果として、
高電流密度を用いたパルスめっきでは、微結晶の析出物
が得られる。また、過電圧が大きいので電極表面の不均
一性とは無関係にランダムな核発生が起こり、さらに水
素発生の低減と共に欠陥（多孔質な膜）の低減にもつな
がっている。Nucleation / Growth in Pulse Plating The macroscopic electrodeposition form in pulse plating depends on the mass transfer phenomenon, but it is the nucleation that governs microscopic properties (crystal grain size, preferential orientation, etc.).・ It is considered to be a growth process.
The nucleation rate is less affected by overvoltage, but the nucleation rate increases with increasing overvoltage. As a result,
Pulsed plating with high current densities produces microcrystalline precipitates. Further, since the overvoltage is large, random nucleation occurs regardless of the nonuniformity of the electrode surface, which further leads to reduction of hydrogen generation and reduction of defects (porous film).
【００４９】パルスめっきにおける表面形態
パルスめっきでは拡散層の厚さが薄く保たれるので、め
っき表面の平滑性は改善される。つまり、拡散層の厚み
が電極表面の凹凸よりも小さい場合には、拡散層は電極
表面の凹凸に沿って成長し、電極表面における電流分布
は均一になり、従ってめっき層の厚さも均一となる。な
お、拡散層の厚さが電極表面の凹凸と同等以上であれ
ば、球状拡散により電流は凸部に集中し、その結果、球
状晶、針状晶、樹枝状晶、粉末状晶等が発生すると考え
られる。Surface Morphology in Pulse Plating In pulse plating, since the thickness of the diffusion layer is kept thin, the smoothness of the plated surface is improved. That is, when the thickness of the diffusion layer is smaller than the unevenness of the electrode surface, the diffusion layer grows along the unevenness of the electrode surface, and the current distribution on the electrode surface becomes uniform, and thus the thickness of the plating layer also becomes uniform. . If the thickness of the diffusion layer is equal to or greater than the irregularities on the electrode surface, the current is concentrated on the convex portion due to spherical diffusion, resulting in the formation of spherical crystals, needle crystals, dendrites, powder crystals, etc. It is thought that.
【００５０】パルスめっきにおける電析結晶組織
結晶化過電圧の増大とともに核発生の臨界半径及び臨界
自由エネルギーが減少し、核発生速度は指数関数的に増
加する。すなわち、パルス電流密度（過電圧）を大きく
すると平均粒径は減少する。一方、配向性は過電圧によ
って変化する。パルスめっきでは、濃度分極を低減し過
電圧を高くできるので、直流めっきに比較して高指数の
優先配向軸をもつ電析物を得ることができる。Electrodeposition Crystal Structure in Pulse Plating As the crystallization overvoltage increases, the critical radius and critical free energy for nucleation decrease, and the nucleation rate exponentially increases. That is, when the pulse current density (overvoltage) is increased, the average particle size decreases. On the other hand, the orientation changes with overvoltage. In the pulse plating, the concentration polarization can be reduced and the overvoltage can be increased, so that an electrodeposit having a preferential orientation axis with a higher index than that of the direct current plating can be obtained.
【００５１】また、ＰＲパルスを電流電源とした電解め
っきを行うと、図１１に示すように、例えば配線用の溝
４等の入口付近に厚く堆積したシード層６の凸部Ｄをな
す銅が、逆電流を流す時に特にエッチングされて溶融
し、その溶融した銅イオンが溝底部の銅イオン濃度の回
復に使われて、正電流を流した時に溝底部に析出し、こ
れによって、シード層の均一な補強が可能となるとも考
えられる。When electrolytic plating is performed using a PR pulse as a current power source, as shown in FIG. 11, for example, copper forming the convex portion D of the seed layer 6 thickly deposited in the vicinity of the entrance of the groove 4 for wiring is formed. , When a reverse current is applied, it is particularly etched and melted, and the melted copper ions are used to recover the copper ion concentration at the bottom of the groove, and when a positive current is applied, it is deposited at the bottom of the groove, which causes the seed layer to grow. It is thought that uniform reinforcement is possible.
【００５２】電解めっきによるシード層の補強が完了す
ると、第２のめっき液供給ヘッド２４を上昇させ旋回さ
せて待避部３８へ退避させ、次にプレコート・回収アー
ム４４を退避位置から基板Ｗ上に移動させて下降させ、
めっき液回収ノズル６０ａから基板Ｗ上のめっき液の残
液を回収する。この回収が終了した後、プレコート・回
収アーム４４を退避位置へ戻し、基板Ｗの被めっき面の
リンスのために純水用の固定ノズル４６から基板Ｗ中央
部に純水を吐出し、同時に基板保持部５０を回転させて
被めっき面のめっき液を純水に置換する。When the reinforcement of the seed layer by electrolytic plating is completed, the second plating solution supply head 24 is raised and swung to be retracted to the retracting section 38, and then the precoat / recovery arm 44 is moved from the retracted position onto the substrate W. Move it down
The residual plating solution on the substrate W is recovered from the plating solution recovery nozzle 60a. After this recovery is completed, the precoat / recovery arm 44 is returned to the retracted position, and pure water is discharged from the fixed nozzle 46 for pure water to the center of the substrate W to rinse the surface of the substrate W to be plated. The holder 50 is rotated to replace the plating solution on the surface to be plated with pure water.
【００５３】リンス終了後、基板保持部５０をめっき位
置Ｂから前処理・洗浄位置Ｃへ下降させ、純水用の固定
ノズル４６から純水を供給しつつ、基板保持部５０、カ
ソード５２及びシール材５４を回転させて水洗し、固定
ノズル４６からの純水の供給を停止し基板保持部５０の
回転速度を増加して、スピン乾燥させる。After the rinse is completed, the substrate holding unit 50 is lowered from the plating position B to the pretreatment / cleaning position C, and while the pure water is supplied from the fixed nozzle 46 for pure water, the substrate holding unit 50, the cathode 52 and the seal. The material 54 is rotated and washed with water, the supply of pure water from the fixed nozzle 46 is stopped, the rotation speed of the substrate holding unit 50 is increased, and spin drying is performed.
【００５４】次に退避部４２にあった第２の第３のめっ
き液供給ヘッド２６を旋回させて基板Ｗの上部に移動さ
せ、第２のめっき液供給ヘッド２４の時と同様にして基
板Ｗの被めっき面をめっきして銅を埋め込む。この時の
めっき液としては、前述した硫酸銅めっき液を用いて銅
を析出させる。硫酸銅浴は、ピロりん酸浴よりも過電圧
が低い特性のために均一電着性は低いが、析出を促進す
る添加剤の作用により、配線の内部に電流が集中しやす
くなって、配線底部からボトムアップ様の析出が起こ
る。その結果、配線内にボイドがない良好なめっきが行
える。Next, the second and third plating solution supply heads 26 in the retreat section 42 are swung to move to the upper part of the substrate W, and the substrate W is processed in the same manner as the second plating solution supply head 24. The surface to be plated of is plated and copper is embedded. As the plating solution at this time, the copper sulfate plating solution described above is used to deposit copper. The copper sulfate bath has a lower overvoltage than the pyrophosphoric acid bath because it has a lower throwing power, but the action of the additive that promotes precipitation makes it easier for current to concentrate inside the wiring, and the bottom of the wiring Causes bottom-up precipitation. As a result, good plating without voids in the wiring can be performed.
【００５５】そして電解めっきによる銅の埋め込みを終
了した後、第３のめっき液供給ヘッド２６を退避部４２
に待避させ、次にプレコート・回収アーム４４を退避位
置から基板Ｗ上に移動して下降させ、他方のめっき液回
収ノズル６０ｂから基板Ｗ上のめっき液の残液を回収
し、プレコート・回収アーム４４を退避位置へ戻し、そ
の後、第２のめっき液供給ヘッド２４の時と同様に、基
板Ｗの被めっき面のリンスと洗浄とスピン乾燥とを行
う。After the copper filling by electrolytic plating is completed, the third plating solution supply head 26 is moved to the retreat section 42.
And then move the precoat / recovery arm 44 from the retracted position onto the substrate W to lower it, and recover the remaining plating solution on the substrate W from the other plating solution recovery nozzle 60b. 44 is returned to the retracted position, and thereafter, as in the case of the second plating solution supply head 24, the surface to be plated of the substrate W is rinsed, washed and spin dried.
【００５６】なお、この時、前述と同様に、電流電源と
して、逆電解、パルスまたはＰＲパルスを用いることが
好ましく、特にＰＲパルスを用いることで、効率よく銅
の埋め込みを行うことができる。次に、基板保持部５０
を停止させて基板受渡位置Ａまで下降させ、搬送ロボッ
ト２０によって基板処理部１２から基板Ｗを取出し、ロ
ード・アンロード部１０に戻す。At this time, it is preferable to use reverse electrolysis, pulse, or PR pulse as the current power source, as described above. Particularly, by using the PR pulse, copper can be embedded efficiently. Next, the substrate holding unit 50
Is stopped and lowered to the substrate transfer position A, the substrate W is taken out from the substrate processing unit 12 by the transfer robot 20 and returned to the loading / unloading unit 10.
【００５７】なお、この例は、無電解めっきと電解めっ
きでシード層を補強した例を示しているが、前述のよう
に、めっき液として、例えばピロりん酸銅めっき液等の
均一電着性に優れたものを使用し、電源電流として、逆
電解、パルスまたはＰＲパルス、特にＰＲパルスを用い
た場合には、無電解めっきによりシード層の補強を省略
して、電解めっき単独でシード層を補強することで、平
坦なシード補強を行うことができる。Although this example shows an example in which the seed layer is reinforced by electroless plating and electrolytic plating, as described above, the plating solution, for example, copper pyrophosphate plating solution, has a uniform electrodeposition property. If a reverse electrolysis, pulse or PR pulse, especially PR pulse is used as the power supply current, the reinforcement of the seed layer is omitted by electroless plating and the seed layer is formed by electrolytic plating alone. By reinforcing, flat seed reinforcement can be performed.
【００５８】図１２は、本発明の他の実施の形態の配線
形成方法を示すもので、これは、同一設備内に、内部に
複数の基板Ｗを収納する２基のロード・アンロード部１
０ａと、それぞれ単体のめっき装置で構成した補強用無
電解めっき装置１４ａ、補強用電解めっき装置１６ａ及
び埋め込み用電解めっき装置１８ａと、２基の洗浄装置
８０ａ，８０ｂと、これらの間で基板Ｗの受け渡しを行
う搬送ロボット２０ａとを収納して構成されている。FIG. 12 shows a wiring forming method according to another embodiment of the present invention, in which two load / unload sections 1 for accommodating a plurality of substrates W therein are provided in the same equipment.
0a, the electroless plating device for reinforcement 14a, the electrolytic plating device for reinforcement 16a and the electrolytic plating device for embedding 18a each constituted by a single plating device, two cleaning devices 80a and 80b, and the substrate W between them. And a transfer robot 20a for delivering the same.
【００５９】そして、表面にシード層６（図１６参照）
を形成した基板Ｗをロード・アンロード部１０ａから搬
送ロボット２０ａで取出し、補強用無電解めっき装置１
４ａに搬送して、シード層６の無電解めっきによる補強
を行う。そして、この基板Ｗを第１の洗浄装置８０ａに
搬送し、その表面を洗浄し乾燥させた後、補強用電解め
っき装置１６ａに搬送して、シード層６の電解めっきに
よる補強を行う。しかる後、この基板Ｗを第２の洗浄装
置８０ｂに搬送し、その表面を洗浄し乾燥させた後、埋
め込み用電解めっき装置１８ａに搬送して、銅の埋め込
みを行い、この埋め込み用電解めっき装置１８ａの内部
で基板を洗浄し乾燥させた後、ロード・アンロード部１
０ａに戻すようにしたものである。Then, the seed layer 6 (see FIG. 16) is formed on the surface.
The substrate W on which the wafer is formed is taken out from the loading / unloading section 10a by the transfer robot 20a, and the electroless plating apparatus for reinforcement 1
4a, and the seed layer 6 is reinforced by electroless plating. Then, the substrate W is transported to the first cleaning device 80a, the surface thereof is cleaned and dried, and then transported to the reinforcing electrolytic plating device 16a to reinforce the seed layer 6 by electrolytic plating. Thereafter, the substrate W is transferred to the second cleaning device 80b, the surface thereof is cleaned and dried, and then transferred to the embedding electroplating device 18a to perform copper embedding, and the embedding electroplating device 18b. After the substrate is washed and dried inside 18a, the loading / unloading unit 1
It is set back to 0a.
【００６０】図１３は、本発明の更に他の実施の形態の
配線形成装置の平面配置図を示すもので、これは、同一
設備内に、内部に複数の基板Ｗを収納する２基のロード
・アンロード部１０ｂと、補強用無電解めっき装置と補
強用電解めっき装置とを兼用した補強用めっき装置８２
と、埋め込み用電解めっき装置１８ｂと、２基の洗浄装
置８０ｃ，８０ｄとこれらの間で基板Ｗの受け渡しを行
う搬送ロボット２０ｂとを収納して構成されている。FIG. 13 is a plan layout view of a wiring forming apparatus according to still another embodiment of the present invention, in which two loads for housing a plurality of substrates W therein are provided in the same equipment. -Reinforcing plating device 82 that doubles as the unloading part 10b and the reinforcing electroless plating device and the reinforcing electrolytic plating device
And an electroplating device 18b for embedding, two cleaning devices 80c and 80d, and a transfer robot 20b that transfers the substrate W between them.
【００６１】そして、表面にシード層６（図１６参照）
を形成した基板Ｗをロード・アンロード部１０ｂから搬
送ロボット２０ｂで取出し、補強用めっき装置８２に搬
送する。そして、この補強用めっき装置８２で、前述の
ように、同一のめっき液（無電解銅めっき液）を使用し
て、シード層６の無電解めっきによる補強と電解めっき
による補強を連続して行う。しかる後、この基板Ｗを第
２の洗浄装置８０ｄに搬送し、その表面を洗浄し乾燥さ
せた後、埋め込み用電解めっき装置１８ｂに搬送して、
銅の埋め込みを行い、この埋め込み用電解めっき装置１
８ｂの内部で基板を洗浄し乾燥させた後、ロード・アン
ロード部１０ａに戻すようにしたものである。Then, the seed layer 6 (see FIG. 16) is formed on the surface.
The substrate W on which is formed is taken out from the load / unload unit 10b by the transfer robot 20b and transferred to the reinforcing plating device 82. Then, in the reinforcing plating device 82, as described above, the same plating solution (electroless copper plating solution) is used to continuously perform the reinforcement by the electroless plating and the reinforcement by the electrolytic plating of the seed layer 6. . Thereafter, the substrate W is transported to the second cleaning device 80d, the surface thereof is washed and dried, and then transported to the embedding electrolytic plating device 18b.
Copper embedding is performed, and this embedding electrolytic plating apparatus 1
After cleaning and drying the substrate inside 8b, it is returned to the loading / unloading section 10a.
【００６２】なお、前述のように、無電解めっきによる
シード層の補強を行わない場合には、この補強用めっき
装置８２で、電源電流として、逆電解、パルスまたはＰ
Ｒパルス、特にＰＲパルスを用いた電解めっきを行って
シード層を補強し、しかる後、埋め込み用電解めっき装
置１８ｂに搬送して、銅の埋め込みを行う。As mentioned above, when the seed layer is not reinforced by electroless plating, reverse electrolysis, pulse or P is used as the power supply current in the reinforcing plating device 82.
Electroplating using R pulse, especially PR pulse is performed to reinforce the seed layer, and thereafter, the seed layer is conveyed to the electrolytic plating apparatus for embedding 18b to embed copper.
【００６３】ここで、電解めっきにおける均一電着性と
ボトムアップ性は、使用する電源電流波形とめっき液に
依存するため、補強用電解めっき装置と埋め込み用電解
めっき装置に共通のめっき液を使用し、この時に使用す
る電源電流波形を各処理に適するように選択するように
してもよい。Here, since the uniform electrodeposition property and the bottom-up property in electrolytic plating depend on the power supply current waveform and the plating solution used, a plating solution common to the reinforcing electrolytic plating apparatus and the embedding electrolytic plating apparatus is used. However, the power supply current waveform used at this time may be selected to be suitable for each process.
【００６４】（実施例１）半導体ウエハの表面に直径
０．１８μｍ、深さ１．０μｍ（アスペクト比：５．
６）のホールを形成し、スパッタリングで１００ｎｍの
厚さの銅シード層を形成した試料を用意した。この試料
の銅シード層を、めっき液としてピロりん酸銅めっき液
（ピロりん酸銅：１５ｇ／Ｌ、ピロりん酸：９２ｇ／
Ｌ、ｐＨ：９．５、液温：２５℃）を用い、電源電流と
して、図４（ａ）示すＰＲパルス（ｔＯＮ＝１３３７ｍ
ｓ，ｔＲ＝５６２ｍｓ，ＯＮ：０．４８Ａ／ｄｍ２，
Ｒ：０．１６Ａ／ｄｍ２）を使用した電解めっきで補強
し、しかる後、浴温を２２．０℃とした硫酸銅めっき液
を使用した電解めっきで銅の埋め込みを行った。この時
の銅シード層を補強した後の状態と、銅を埋め込んだ後
の状態をＳＥＭ観察した。この時のＳＥＭ写真を図面化
したものを図１４に示す。この図１４（ａ）から、銅シ
ード層を補強することで、ホール１００の内周面（側面
及び底面）を均一な膜厚で連続した銅シード層１０２で
一体に覆い、図１４（ｂ）から、銅層１０４を堆積させ
ることで、ホール１００内に健全な銅１０４の埋め込み
を行えることが判る。Example 1 A surface of a semiconductor wafer has a diameter of 0.18 μm and a depth of 1.0 μm (aspect ratio: 5.
A sample was prepared in which the hole of 6) was formed and a copper seed layer having a thickness of 100 nm was formed by sputtering. The copper seed layer of this sample was used as a plating solution in a copper pyrophosphate plating solution (copper pyrophosphate: 15 g / L, pyrophosphate: 92 g / L).
L, pH: 9.5, liquid temperature: 25 ° C., and used as a power source current, a PR pulse (tON = 1337 m) shown in FIG.
s, tR = 562 ms, ON: 0.48 A / dm2
R: 0.16 A / dm2) was reinforced by electrolytic plating, and then copper was embedded by electrolytic plating using a copper sulfate plating solution having a bath temperature of 22.0 ° C. At this time, the state after reinforcing the copper seed layer and the state after embedding copper were observed by SEM. FIG. 14 shows a drawing of the SEM photograph at this time. From FIG. 14A, by reinforcing the copper seed layer, the inner peripheral surface (side surface and bottom surface) of the hole 100 is integrally covered with a continuous copper seed layer 102 having a uniform film thickness, and FIG. From this, it can be understood that by depositing the copper layer 104, the sound copper 104 can be embedded in the hole 100.
【００６５】（実施例２）実施例１と同様な試料を用意
し、電源電流として、図４（ｃ）に示すＰＲパルス（ｔ
ＯＮ＝１３３７ｍｓ，ｔＯＦＦ＝１００ｍｓ，ｔＲ＝５
６２ｍｓ，ＯＮ：０．４８Ａ／ｄｍ２， Ｒ：０．１６
Ａ／ｄｍ２）を使用し、その他の条件を実施例１と同じ
にした電解めっきで銅シード層を補強し、実施例１と同
じ条件で銅の埋め込みを行った。この時の状態をＳＥＭ
写真で観察したところ、図１４に示すものと同様な状態
を得ることができた。(Example 2) A sample similar to that of Example 1 was prepared, and the PR pulse (t) shown in FIG.
ON = 1337 ms, tOFF = 100 ms, tR = 5
62 ms, ON: 0.48 A / dm2, R: 0.16
A / dm2) was used and other conditions were the same as in Example 1 to reinforce the copper seed layer by electrolytic plating, and copper was embedded under the same conditions as in Example 1. The state at this time is SEM
As a result of observation with a photograph, a state similar to that shown in FIG. 14 could be obtained.
【００６６】（実施例３）実施例１と同様な試料を用意
し、この試料の銅シード層を、めっき液として硫酸銅無
電解めっき液（ＣｕＳＯ４・５Ｈ２Ｏ：５ｇ／Ｌ、ＥＤ
ＴＡ・４Ｈ：１４ｇ／Ｌ、ＣＨＯＣＯＯＨ：１８ｇ／
Ｌ、ｐＨ：１１．５（ＴＭＡＨを使用して）、液温：６
０℃）を用いて１分間の無電解めっきを施し、しかる
後、電源電流として、図４（ａ）示すＰＲパルス（ｔＯ
Ｎ＝１３３７ｍｓ，ｔＲ＝５６２ｍｓ，ＯＮ：０．４８
Ａ／ｄｍ２， Ｒ：０．１６Ａ／ｄｍ２）を使用した無
電解めっきで補強した。次に、実施例１と同じ条件で銅
の埋め込みを行った。この時の状態をＳＥＭ写真で観察
したところ、図１４に示すものと同様な状態を得ること
ができた。(Example 3) A sample similar to that of Example 1 was prepared, and a copper seed layer of this sample was used as a plating solution for copper sulfate electroless plating solution (CuSO4.5H2O: 5 g / L, ED).
TA-4H: 14 g / L, CHOCOOH: 18 g /
L, pH: 11.5 (using TMAH), liquid temperature: 6
Electroless plating for 1 minute using 0 ° C.), and then, as the power supply current, the PR pulse (tO) shown in FIG.
N = 1337 ms, tR = 562 ms, ON: 0.48
A / dm2, R: 0.16 A / dm2) was reinforced by electroless plating. Next, copper was embedded under the same conditions as in Example 1. When the state at this time was observed by an SEM photograph, a state similar to that shown in FIG. 14 could be obtained.
【００６７】（比較例）実施例１と同様な試料を用意
し、電源電流として、直流電源（電流密度：０．４８Ａ
／ｄｍ２）を使用し、その他の条件を実施例１と同じに
した電解めっきで銅シード層を補強し、実施例１と同じ
条件で銅の埋め込みを行った。この時の銅シード層を補
強した後の状態と、銅を埋め込んだ後の状態をＳＥＭ観
察した。この時のＳＥＭ写真を図面化したものを図１４
に示す。この図１４（ａ）から、銅シード層を補強する
と、ホール１００の内周面の上部のみに銅シード層１０
２が残り、銅層１０４を堆積させると、ホール１００の
底部に銅が析出せずに、ここにボイド（銅の未析出部）
１０６が生じることが判る。これは、銅シード層を補強
する際に、ホールの底部の銅シード層がエッチングされ
て除去されるためであると考えられる。(Comparative Example) A sample similar to that of Example 1 was prepared, and a direct current power source (current density: 0.48 A) was used as a power source current.
/ Dm2) and other conditions were the same as in Example 1 to reinforce the copper seed layer by electrolytic plating, and copper was embedded under the same conditions as in Example 1. At this time, the state after reinforcing the copper seed layer and the state after embedding copper were observed by SEM. FIG. 14 shows a drawing of the SEM photograph at this time.
Shown in. From FIG. 14A, when the copper seed layer is reinforced, the copper seed layer 10 is formed only on the upper portion of the inner peripheral surface of the hole 100.
2 remains, and when the copper layer 104 is deposited, copper is not deposited at the bottom of the hole 100, and a void (copper undeposited portion) is formed here.
It can be seen that 106 occurs. It is considered that this is because the copper seed layer at the bottom of the hole is etched and removed when the copper seed layer is reinforced.
【００６８】[0068]
【発明の効果】以上説明したように、本発明によれば、
高アスペスト比の微細配線（例えば、０．１μｍ以下）
であっても、シード層を確実に補強して、ボイドのない
健全な配線を形成することができ、スループットを向上
させることができる。As described above, according to the present invention,
Fine wiring with a high aspect ratio (for example, 0.1 μm or less)
Even in this case, the seed layer can be reliably reinforced to form a void-free sound wiring, and the throughput can be improved.
【図１】本発明の実施の形態の配線形成装置の全体平面
図である。FIG. 1 is an overall plan view of a wiring forming device according to an embodiment of the present invention.
【図２】図１の基板保持部とめっき液供給ヘッドで無電
解めっきを構成した時の状態を示す断面図である。FIG. 2 is a cross-sectional view showing a state in which electroless plating is configured with the substrate holder and the plating solution supply head of FIG.
【図３】図１の基板保持部とめっき液供給ヘッドで電解
めっきを構成した時の状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state when electrolytic plating is constituted by the substrate holding part and the plating solution supply head of FIG.
【図４】無電解めっきと電解めっきでシード層を補強す
る状態の概略的に示す図である。FIG. 4 is a diagram schematically showing a state in which a seed layer is reinforced by electroless plating and electrolytic plating.
【図５】ＰＲパルスの一例を示す図である。FIG. 5 is a diagram showing an example of a PR pulse.
【図６】ＰＲパルスの他の例を示す図である。FIG. 6 is a diagram showing another example of a PR pulse.
【図７】ＰＲパルスの更に他の例を示す図である。FIG. 7 is a diagram showing still another example of a PR pulse.
【図８】ＰＲパルスの更に他の例を示す図である。FIG. 8 is a diagram showing still another example of a PR pulse.
【図９】ＰＲパルスの更に他の例を示す図である。FIG. 9 is a diagram showing still another example of the PR pulse.
【図１０】ＰＲパルスの更に他の例を示す図である。FIG. 10 is a diagram showing still another example of the PR pulse.
【図１１】電源電流としてＰＲパルスを使用した電解め
っきでシード層が均一な膜厚に補強される状態を模式的
に示す図である。FIG. 11 is a diagram schematically showing a state in which the seed layer is reinforced to a uniform film thickness by electrolytic plating using a PR pulse as a power supply current.
【図１２】本発明の実施の形態の配線形成装置の他の例
を示す全体平面図である。FIG. 12 is an overall plan view showing another example of the wiring forming apparatus according to the embodiment of the present invention.
【図１３】本発明の実施の形態の配線形成装置の更に他
の例を示す全体平面図である。FIG. 13 is an overall plan view showing still another example of the wiring forming device according to the embodiment of the present invention.
【図１４】本発明の実施例における銅シード層を補強し
た後の状態と、銅を埋め込んだ後の状態をＳＥＭ観察し
て図面化した図である。FIG. 14 is a diagram in which a state after the copper seed layer is reinforced and a state after the copper is embedded in the example of the present invention are SEM-observed and illustrated.
【図１５】本発明の比較例における銅シード層を補強し
た後の状態と、銅を埋め込んだ後の状態をＳＥＭ観察し
て図面化した図である。FIG. 15 is a diagram in which a state after the copper seed layer is reinforced and a state after the copper is embedded in the comparative example of the present invention are SEM-observed and drawn.
【図１６】半導体装置における銅配線形成例のＣＭＰ処
理までを工程順に示す図である。FIG. 16 is a diagram showing, in the order of steps, up to the CMP process of a copper wiring formation example in a semiconductor device.
６ シード層 ６ａ 補強シード層 ６ｂ 複合シード層 ７ 銅層 ８ 配線 １０，１０ａ，１０ｂ ロード・アンロード部 １２ 基板処理部 １４，１４ａ 補強用無電解めっき装置 １６，１６ｂ 補強用電解めっき装置 １８，１８ａ，１８ｂ 埋め込み用電解めっき装置 ２２，２４，２４ めっき液供給ヘッド ３０、３６，４０ 揺動アーム ４４ プレコート・回収アーム ４６ 固定ノズル ５０ 基板保持部 ５２ カソード ５４ シール材 ５６ 飛散防止カップ ５８ プレコートノズル ６０ａ，６０ｂ 液回収ノズル ６６ 噴射ノズル ６８ ランプヒータ ７０ ハウジング ７２ アノード ７４ めっき液含浸材 ７６ めっき液供給管 ８２ 補強用めっき装置 6 Seed layer 6a Reinforcing seed layer 6b composite seed layer 7 Copper layer 8 wiring 10, 10a, 10b Load / unload section 12 Substrate processing unit 14,14a Electroless plating device for reinforcement 16, 16b Electroplating equipment for reinforcement 18, 18a, 18b Embedded electroplating equipment 22, 24, 24 Plating solution supply head 30, 36, 40 Swing arm 44 Precoat / Recovery Arm 46 fixed nozzle 50 substrate holder 52 cathode 54 sealant 56 Shatterproof cup 58 Precoat nozzle 60a, 60b Liquid recovery nozzle 66 injection nozzle 68 Lamp heater 70 housing 72 Anode 74 Plating solution impregnated material 76 Plating solution supply pipe 82 Reinforcing plating equipment
フロントページの続き (72)発明者 奥山 修一 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 金山 真 神奈川県藤沢市善行坂１−１−６ 荏原ユ ージライト株式会社内 (72)発明者 松本 守治 神奈川県藤沢市善行坂１−１−６ 荏原ユ ージライト株式会社内 Ｆターム(参考） 4K024 AA09 AB03 AB17 BB12 CA01 CA02 CA06 CA07 CA08 CB01 CB02 CB14 CB18 DB10 4M104 BB04 DD37 DD52 DD53 HH12 HH16 5F033 HH11 MM01 PP15 PP27 PP28 PP33 XX01 XX09 XX10 XX34Continued front page (72) Inventor Shuichi Okuyama 11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd. Inside the EBARA CORPORATION (72) Inventor Makoto Kanayama Yuzawa Ebara 1-1-6 Zenyokozaka, Fujisawa City, Kanagawa Prefecture -Inside Zelite Co., Ltd. (72) Inventor Moriji Matsumoto Yuzawa Ebara 1-1-6 Zenyokozaka, Fujisawa City, Kanagawa Prefecture -Inside Zelite Co., Ltd. F-term (reference) 4K024 AA09 AB03 AB17 BB12 CA01 CA02 CA06 CA07 CA08 CB01 CB02 CB14 CB18 DB10 4M104 BB04 DD37 DD52 DD53 HH12 HH16 5F033 HH11 MM01 PP15 PP27 PP28 PP33 XX01 XX09 XX10 XX34
Claims (9)
にシード層を形成し、 前記シード層を無電解めっきと電解めっきによって補強
し、 前記微細窪みの内部に電解めっきにより導電体を埋め込
むことを特徴とする配線形成方法。1. A seed layer is formed on the surface of a substrate on which fine recesses for wiring are formed, the seed layer is reinforced by electroless plating and electrolytic plating, and a conductor is embedded in the fine recesses by electrolytic plating. A wiring forming method characterized by the above.
し、しかる後、電解めっきで更に補強することを特徴と
する請求項１記載の配線形成方法。2. The wiring forming method according to claim 1, wherein the seed layer is reinforced by electroless plating, and then further reinforced by electrolytic plating.
るシード層の補強を同一のめっき液を使用して行うこと
を特徴とする請求項１または２記載の配線形成方法。3. The wiring forming method according to claim 1, wherein the electroless plating and the seed layer are reinforced by the electrolytic plating using the same plating solution.
を、逆電解、パルスまたはＰＲパルスの少なくとも１種
の電流波形による電解めっきによって行うことを特徴と
する請求項１乃至３のいずれかに記載の配線形成方法。4. The reinforcement of the seed layer by the electrolytic plating is performed by electrolytic plating by at least one kind of current waveform of reverse electrolysis, pulse or PR pulse. Wiring formation method.
と、電解めっきによる導電体の埋め込みを、同一のめっ
き液を使用し電流波形を変えて行うことを行うことを特
徴とする請求項１乃至４のいずれかに記載の配線形成方
法。5. The seed layer is reinforced by the electrolytic plating and the conductor is embedded by the electrolytic plating by using the same plating solution and changing the current waveform. The method for forming a wiring according to any one of 1.
にシード層を形成し、 前記シード層を、逆電解、パルスまたはＰＲパルスの少
なくとも１種の電流波形による電解めっきによって補強
し、 前記微細窪みの内部に電解めっきにより導電体を埋め込
むことを特徴とする配線形成方法。6. A seed layer is formed on the surface of a substrate on which fine recesses for wiring are formed, and the seed layer is reinforced by electrolytic plating with at least one current waveform of reverse electrolysis, pulse or PR pulse, A method for forming a wiring, characterized in that a conductor is embedded in the inside of the fine recess by electrolytic plating.
と、電解めっきによる導電体の埋め込みを、同一のめっ
き液を使用し電流波形を変えて行うことを特徴とする請
求項６記載の配線形成方法。7. The wiring forming method according to claim 6, wherein the seed layer is reinforced by the electrolytic plating and the conductor is embedded by the electrolytic plating by using the same plating solution and changing the current waveform. .
に形成したシード層を無電解めっきによって補強する補
強用無電解めっき装置と、 前記シード層を電解めっきによって補強する補強用電解
めっき装置と、 前記微細窪みの内部に電解めっきによって導電体を埋め
込む埋め込み用電解めっき装置とを備え、 これらの装置を一つの装置内に配置したことを特徴とす
る配線形成装置。8. A reinforcing electroless plating apparatus for reinforcing a seed layer formed on the surface of a substrate on which fine recesses for wiring are formed by electroless plating, and a reinforcing electrolytic plating apparatus for reinforcing the seed layer by electrolytic plating. And an electroplating device for embedding a conductor in the fine recess by electroplating, and these devices are arranged in one device.
解めっき装置及び埋め込み用電解めっき装置として、同
一の基板処理部を使用したことを特徴とする請求項８記
載の配線形成装置。9. The wiring forming apparatus according to claim 8, wherein the same substrate processing unit is used as the reinforcing electroless plating apparatus, the reinforcing electrolytic plating apparatus, and the embedding electrolytic plating apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001317217A JP3939124B2 (en) | 2001-10-15 | 2001-10-15 | Wiring formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001317217A JP3939124B2 (en) | 2001-10-15 | 2001-10-15 | Wiring formation method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005272776A Division JP4346593B2 (en) | 2005-09-20 | 2005-09-20 | Wiring formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003124214A true JP2003124214A (en) | 2003-04-25 |
| JP3939124B2 JP3939124B2 (en) | 2007-07-04 |
Family
ID=19135123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001317217A Expired - Fee Related JP3939124B2 (en) | 2001-10-15 | 2001-10-15 | Wiring formation method |
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| Country | Link |
|---|---|
| JP (1) | JP3939124B2 (en) |
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| JP2009057582A (en) * | 2007-08-30 | 2009-03-19 | Hitachi Cable Ltd | Method for forming wiring and interlayer connection via |
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| CN103904022A (en) * | 2012-12-25 | 2014-07-02 | 中国科学院金属研究所 | Electroless nickel alloy based through hole filling method and application thereof |
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