CN107611779A - A kind of VCSEL coupling arrays and the light beam scanning chip integrated on optical phase shifter array chip - Google Patents
A kind of VCSEL coupling arrays and the light beam scanning chip integrated on optical phase shifter array chip Download PDFInfo
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Abstract
The invention discloses the light beam integrated on a kind of VCSEL coupling arrays and surface optical phase shifter piece to scan chip, belongs to the interleaving techniques field of semiconductor laser technology and light beam scanning technique.The present invention induces the technologies such as anti-waveguide by using H+implantation, photonic crystal or chamber, realizes the coupling between VCSEL array unit, array each unit launches the consistent coherent light of power.The characteristics of using VCSEL array planar structure, by techniques such as photoetching, sputtering, PECVD, ICP, evaporations, transmitted light phaser array is integrated on VCSEL coupling arrays surface, so as to obtain small volume, the light beam scanning chip that compact-sized, integrated level is high.It solve in traditional optical phased array light-beam scanner because volume is big, reliability is low caused by LASER Light Source is spatially separated from phaser array, installation it is complicated the problems such as, have a extensive future.
Description
Technical field
The invention belongs to the interleaving techniques field of semiconductor laser technology and light beam scanning technique, and in particular to a kind of
VCSEL coupling arrays and the light beam scanning chip integrated on optical phase shifter array chip.
Background technology
Phased array optical technology is the optical technology that a kind of light phase for making beam wave surface produces periodic modulation, works as phase
The unit of modulator array obtain one spatially the phase of linear distribution when, beam wave surface will be made to occur in space inclined
Turn, produce light beam scanning.The technology belongs to the pure automatically controlled on-mechanical light beam scanning of low inertia, have beam position flexibly, scanning speed
The scanning features such as degree is fast, high resolution, angle driving scope are big, show in High-performance lasers radar, FSO, laser
Show, various military and civil area extensive application and the demands such as laser printing.Traditional optical phased array light beam scanning dress
Put and be made up of lasing light emitter, optical system and phaser array, the coherent light sent by lasing light emitter by optical system collimation and
The equally distributed light beam of power is formed after expanding, phaser array is incided, so as to realize the phased deflection of light beam.Due to laser
What source was spatially separated with phaser array, lasing light emitter, optical system and phase shifter are required for independent mounting bracket
And installation component is fixed, cause that light-beam scanner complicated integral structure, volume are big, reliability is low, installation process is complicated, no
It is easy to operate, limit its further development and application.
Vertical cavity surface emitting laser (Vertical-cavity surface-emitting laser, VCSEL) has
Single longitudinal mode, Low threshold, circular light spot, be easily formed the features such as two-dimensional array, make it high-power output etc. have it is many solely
Special advantage.In addition, VCSEL has planar structure feature in itself, just can be relatively easily in VCSEL tables using common process
Face integrates the transmitted light phaser arrays such as liquid crystal phaser array, and so as to obtain small volume, compact-sized, integrated level is high
Laser beam scans chip.But conventional VCSEL single tubes surface optical field distributed pole is uneven so that incides and is integrated in its table
The luminous power of the optical phase shifter array each unit in face is inconsistent, can not realize effective optical beam manipulation.Using VCSEL two dimension battle arrays
Row, phaser array each unit can be made to obtain identical luminous power.However, each luminescence unit of common VCSEL array is mutual
Irrelevant, its output light is incoherent light, it is impossible to the lasing light emitter as phased array light-beam scanner.The present invention uses VCSEL
Coupling array can make the coherent optical powers for inciding the optical phase shifter array each unit for being integrated in its surface as lasing light emitter
Unanimously.It is integrated such as liquid crystal phase shifter battle array on VCSEL coupling arrays surface by photoetching, sputtering, PECVD, etching isoplanar process
The transmitted light phaser arrays such as row, so as to lasing light emitter and phaser array is integrated on the same chip, acquisition volume
It is small, in light weight, reliability is high, the light beam that is easily installed scanning chip.By reasonably designing, same phase VCSEL can also be obtained
Coupling array so that light beam scanning chip obtains excellent beam quality.
The content of the invention
It is an object of the invention to solve in traditional optical phased array light-beam scanner because of LASER Light Source and phase shifter
Array is spatially separated from and causes that complicated integral structure, volume are big, reliability is low, installation process is complicated, not easy to operate etc. ask
Topic.
Using the VCSEL coupling arrays of planar structure as lasing light emitter, pass through the techniques such as photoetching, sputtering, PECVD, etching
Such as liquid crystal phaser array transmitted light phaser array is integrated on its surface, lasing light emitter and phaser array are integrated in
On same chip, so as to realize small volume, the light beam that compact-sized, integrated level is high scanning chip.
The technical solution of the present invention is as follows：
1. being limited by H+implantation or photonic crystal or chamber inducing the technologies such as anti-waveguide, make each luminous list of VCSEL array
The light field of member couples in device inside, has fixed phase relation between unit, high light beam quality phase can be obtained so as to prepare
The VCSEL coupling arrays of dry light output.
2. the works such as photoetching, sputtering, PECVD, etching are passed through as lasing light emitter using the VCSEL coupling arrays of planar structure
Skill integrates such as liquid crystal phaser array transmitted light phaser array on its surface, and lasing light emitter and phaser array are integrated
On the same chip.
VCSEL coupling array each units launch the consistent coherent light of power, uniformly incide and are integrated in array surface
Transmission-type phaser array.The voltage of phaser array unit is put on by regulation to adjust the phase shift of unit
Amount, makes the phase from each phase shifter element output light-wave identical in particular directions, is mutually grown so as to the light wave of the specific direction
Interference, realize the light beam deflection on specific direction.
Cross-sectional, vertical section schematic diagram and the top view of the light beam scanning chip of the present invention are respectively such as Fig. 1, figure
Shown in 2 and Fig. 3.
The integrated technique of the light beam scanning chip is as follows：VCSEL epitaxial structures are grown first, are then noted using proton
Enter, photonic crystal or chamber induce the technologies such as anti-waveguide, preparing VCSEL by techniques such as photoetching, sputtering, PECVD, etchings couples
Array, to obtain relevant light output；Then use PECVD in VCSEL array surface deposition a layer thickness for the μ m-thick of 50nm~3
SiO2Or SiNxInfrabasal plate of the dielectric film as phaser array, mask plate is recycled, by VCSEL array positive electrode pressure welding point
The SiO of side2Or SiNxDielectric film etches away, to realize that the electric current to VCSEL array injects；Then in remaining SiO2Or SiNx
The Au films that thickness is 100nm~500nm are sputtered on dielectric film, using mask plate, by transmission region and other design sections
Au films etch away；Then evaporation thickness is 20nm~80nm ito thin film, recycles mask plate to etch shape to ito thin film
It is in strip transparency electrode；There is upper base of the sheet glass as phaser array of 20nm~80nm ito thin films using lower surface evaporation
Plate；In the ITO surfaces of upper substrate and infrabasal plate ITO strip electrodes surface spin coating alignment films, then dried at 200 DEG C~300 DEG C
Friction orientation after roasting 2~3 hours；Then 1 μm~5 μm gold goals of diameter are adulterated in liquid crystal cell frame adhesive, to realize upper substrate public affairs
The electrical connection of common electrode and infrabasal plate common electrical limit；Liquid crystal is finally poured into, with antiparallel manner into box, completes light beam scanning core
Piece integrates.
It is anti-that described VCSEL coupling arrays include H+implantation coupling array, photon crystal coupled array and chamber induction
Waveguide coupling array etc. can obtain the VCSEL array of relevant light output.
Described VCSEL coupling array lasing light emitters surface is provided with M × N number of VCSEL units, and M, N are more than 1.
The VCSEL units of the VCSEL coupling arrays lasing light emitter can be designed to symmetrical square or circular, can also set
Count rectangular with acquisition polarization coherent light.
Described VCSEL coupling arrays lasing light emitter uses peripheral electrode or grid electrode and other transparent current expansions
Layer carrys out the extension of auxiliary surface electric current.
Described Au films are as phase shifter element and the lead end of external control circuit.
Described ITO bar shaped transparency electrodes, it is laid in above VCSEL coupling arrays light-emitting units, its both ends and Au films
Connection, by adjust the voltage that is carried on Au films i.e. can voltage of the controlled loading in ITO bar shaped transparency electrodes, reach
Change the purpose of phase, realize the deflection of light beam.
Described transmitted light phaser array includes one-dimensional or two-dimentional liquid crystal phaser array, AlGaAs fiber waveguides are moved
Phase device array, PLZT transparent electro-optic ceramics phaser arrays etc. can produce the saturating of periodic modulation to the light phase of beam wave surface
Penetrate formula phaser array.
Had the beneficial effect that caused by the present invention：
VCSEL coupling arrays can provide uniform high-power coherent light output.The characteristics of using its planar structure, pass through
Conventional processing technology, can be easily by the transmitted light phase shifter battle array such as VCSEL coupling arrays and liquid crystal phaser array
Arrange and the light beam scanning chip that can realize light beam two-dimensional deflection is combined into by way of being integrated on piece, solve traditional lasing light emitter
The deficiency being spatially separated with phaser array, reduce mounting bracket and other installation components, have small volume, it is in light weight, can
By property it is high, the advantage such as be easily installed.Have in fields such as laser radar, laser printing, free space optical interconnection, photoswitches huge
Application prospect.
Brief description of the drawings
Fig. 1：The horizontal sectional drawing of integrating optical beam scanning chip proposed by the present invention；
Fig. 2：Longitudinal sectional drawing of integrating optical beam scanning chip proposed by the present invention；
Fig. 3：The top view of integrating optical beam scanning chip proposed by the present invention；
Fig. 4：The VCSEL epitaxial slice structure schematic diagrames for growing to obtain using MOCVD epitaxy；
Fig. 5：VCSEL epitaxial wafer superficial growth silica schematic diagrames；
Fig. 6：Sputter and peel off the structural representation after nickel；
Fig. 7：The mask schematic diagram that ICP is etched；
Fig. 8：Structural representation after H+implantation；
Fig. 9：Structural representation after wet etching silica；
Figure 10：Top Ti/Au peripheral electrode structural representations after sputtering and peeling off；
Figure 11：Sputter the structural representation after backplate；
Figure 12：VCSEL array superficial growth SiO2Structural representation afterwards；
Figure 13：SiO above photoetching and wet etching Au electrode pads2Structural representation afterwards；
Figure 14：Sputter and peel off the structural representation after Au；
Figure 15：It is deposited and etches the structural representation after ITO；
Figure 16：Grow and etch SiO2Structural representation afterwards；
Figure 17：Structural representation after the frame glue of coating doping gold goal；
Figure 18：Inject liquid crystal and into the structural representation after box.
In figure：1st, VCSEL epitaxial wafer substrates, 2, N-type DBR, 3, active area, 4, p-type DBR, 5, SiO2, 6, Ni, 7, proton
Injection region, 8, Ti/Au peripheral electrodes, 9, back side AuGeNi/Au electrodes, 10, SiO2, 11, ito transparent electrode, 12, gold doping ball frame
Glue, 13, top glass substrate, 14, liquid crystal.
Embodiment
Embodiment
Exemplified by integrating liquid crystal phaser array by H+implantation type VCSEL coupling arrays surface, the carry out to the present invention is detailed
Describe in detail bright.
VCSEL coupling arrays are introduced respectively with reference to Fig. 4-Figure 18 to sweep with the light beam integrated on optical phase shifter array chip
Retouch the embodiment of the preparation method of chip；
Step 1, using metal organic chemical vapor deposition (MOCVD) on N-GaAs 34 pairs of epitaxial growth successively
n-Al(0.12-0.9)GaAs and n-Al0.9GaAs forms DBR speculums, Al(0.12-0.9)GaAs/Al0.9GaAs lower limit layers, three pairs
Al0.3GaAs/GaAs quantum well structure active areas, Al0.9GaAs/Al(0.12-0.9)GaAs upper limiting layers, 22.5 couples of p-Al0.12GaAs
With p-Al(0.9-0.12)GaAs forms DBR speculums, p-Al0.12GaAs and p-GaAs heavy doping contact layers；
Step 2, using plasma enhanced CVD (PECVD) in epitaxial wafer superficial growth one obtained above
The silica of 3.2 μm of layer；
Step 3, do photoetching and sputtering technology one layer of sputtering silicon oxide above light hole using inverting glue's
Metallic nickel, the nickel in other regions in addition to light hole is peeled off with reference to ultrasound with acetone；
Step 4, the titanium dioxide using sense coupling method (ICP) etching other regions in addition to light hole
Silicon, etch thicknesses are 2.7 μm, and remaining 0.5 μm prevents from producing channelling effect and control H+implantation depth during H+implantation, so as to
Complete the making of H+implantation mask；
Step 5, using H+implantation method H is carried out in slice, thin piece obtained above+Injection, first time Implantation Energy are
315keV, second of Implantation Energy are 250keV, and implantation dosage is 1E15cm twice-2；
Step 6, using photoresist protection to board marker, remove silica with wet etching method；
Step 7, using invert glue do photoetching and sputtering technology directly over injection region surface sputtering thickness beTi/Au peripheral electrodes, peel off the metal of light extraction bore region with reference to ultrasound with acetone, i.e., except unthreaded hole area
Domain without Ti/Au outside, other regions are all covered with Ti/Au；
Step 8, using wafer lapping machine by substrate wear down to 400 μm or so, sputteringAuGeNi/Au the back of the body
Face electrode；
Step 9, slice, thin piece is formed good Ohmic contact, complete the preparation of VCSEL coupling arrays；
Step 10, using PECVD one layer of 550nm of VCSEL coupling arrays superficial growth obtained above silica,
Mask is done using photoresist, the silica above Ti/Au peripheral electrodes is etched away into 350nm, makes silica flat for one
Whole plane；
Step 11, using photoresist mask is done, removed with wet etching method above VCSEL coupling array positive electrodes pressure welding point
Silica so that the positive electrode pressure welding point of VCSEL coupling arrays comes out, facilitate pressure welding line and give VCSEL array supply
Electricity；
Step 12, sputter thickness using inverting glue and do silica surface after above-mentioned corrosion of photoetching and sputtering technology
ForLead end of the Ti/Au films as phase modulation unit, peeled off with acetone combination ultrasound and remove design section
Outer Ti/Au films；
Step 13, the ito thin film that evaporation thickness is 40nm, mask is done using photoresist, and phase modulation is formed using wet etching
The ITO strip electrodes of unit, its both ends are connected with above-mentioned Ti/Au films；
Step 14, the silica using one layer of 300nm of PECVD growths, do mask, using wet etching using photoresist
Etch the region for needing to be connected with upper substrate public electrode and transmission region；
Step 15, the frame glue after gold goal will be adulterated coated in the above-mentioned needs region Nian Jie with upper substrate；
Step 16, surface is coated with to glass substrate that thickness is 80nm ito thin films to being bonded in frame glue, is coated with that of ITO
One down, reserves an osculum, is then injected into liquid crystal, fills liquid crystal and moves sheet glass afterwards until completely enclosed liquid crystal.
The better embodiment of the present invention is the foregoing is only, is not intended to limit the invention, all spirit in the present invention
With any modification, replacement and the improvement made on the premise of design etc., it is considered as being included within protection scope of the present invention.
Claims (10)
1. a kind of VCSEL coupling arrays and the light beam scanning chip integrated on optical phase shifter array chip, it is characterised in that：S1.
Limited by H+implantation or photonic crystal or chamber induce anti-guide technology, make the light field of each luminescence unit of VCSEL array in device
Part inner couplings, there is fixed phase relation between unit, can obtain high light beam quality so as to prepare and be concerned with light output
VCSEL coupling arrays；
S2. photoetching, sputtering, PECVD, etching, evaporation, liquid are passed through as lasing light emitter using the VCSEL coupling arrays of planar structure
Brilliant molding process integrates liquid crystal transmitted light phaser array on its surface, lasing light emitter is integrated in phaser array same
On individual chip；
VCSEL coupling array each units launch the consistent coherent light of power, uniformly incide the transmission-type for being integrated in its surface
Phase-shifter array；The voltage of phaser array unit is put on to adjust the phase-shift phase of unit by regulation, make from
The phase of each phase-shifter unit output light-wave is identical in particular directions, real so as to the light wave constructive interference of the specific direction
Light beam deflection on existing specific direction.
2. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：The integrated technique of light beam scanning chip is as follows：VCSEL epitaxial structures are grown first, then using proton
Injection, photonic crystal or chamber induction anti-waveguide coupling mechanism, VCSEL couplings are prepared by photoetching, sputtering, PECVD, etching technics
Combined array arranges, to obtain relevant light output；Then use PECVD in VCSEL array surface deposition a layer thickness for the μ m-thick of 50nm~3
SiO2Or SiNxInfrabasal plate of the dielectric film as phaser array, mask plate is recycled, by VCSEL array positive electrode pressure welding point
The SiO of top2Or SiNxDielectric film etches away, to realize that the electric current to VCSEL array injects；Then in remaining SiO2Or
SiNxThe Au films that thickness is 100nm~500nm are sputtered on dielectric film, using mask plate, by transmission region and other designs
The Au films in region etch away；Then evaporation thickness is 20nm~80nm ito thin film, recycles mask plate to carve ito thin film
Erosion forms bar shaped transparency electrode；There is the sheet glass of 20nm~80nm ito thin films as phase-shifter array using lower surface evaporation
Upper substrate；In the ITO surfaces of upper substrate and infrabasal plate ITO strip electrodes surface spin coating alignment films, then 200 DEG C~300
DEG C baking 2~3 hours after friction orientation；Then 1 μm~5 μm gold goals of diameter are adulterated in liquid crystal cell frame adhesive, to realize upper base
Plate public electrode and the electrical connection of infrabasal plate common electrical limit；Liquid crystal is finally poured into, with antiparallel manner into box, light beam is completed and sweeps
Retouch the integrated of chip.
3. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described VCSEL coupling arrays include H+implantation coupling array, photon crystal coupled array and
The anti-waveguide array of chamber induction can obtain the VCSEL array of relevant light output.
4. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described VCSEL coupling array lasing light emitters surface is provided with M × N number of VCSEL units, and M, N are more than 1.
5. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：The VCSEL units of the VCSEL coupling arrays lasing light emitter can be designed to it is symmetrical square or circular,
It can also design rectangular with acquisition polarization coherent light.
6. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described VCSEL coupling arrays lasing light emitter is using peripheral electrode or grid electrode and other are transparent
Current extending carrys out the extension of auxiliary surface electric current.
7. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described Au films are as phase shifter element and the lead end of external control circuit.
8. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described ITO bar shaped transparency electrodes, it is laid in above VCSEL coupling arrays light-emitting units, its both ends
Be connected with Au films, by adjust the voltage that is carried on Au films i.e. can controlled loading in ITO bar shaped transparency electrodes
Voltage, reach the purpose for changing phase, realize the deflection of light beam.
9. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：Described transmitted light phaser array includes one-dimensional or two-dimentional liquid crystal phaser array, AlGaAs
Fiber waveguide phaser array, PLZT transparent electro-optic ceramics phaser array can be produced to the light phase of beam wave surface and periodically adjusted
The transmission-type phaser array of system.
10. a kind of VCSEL coupling arrays according to claim 1 scan with the light beam integrated on optical phase shifter array chip
Chip, it is characterised in that：VCSEL coupling arrays and the preparation method of the light beam scanning chip integrated on optical phase shifter array chip
Embodiment；
Step 1, using metal organic chemical vapor deposition (MOCVD) on N-GaAs 34 couples of n- of epitaxial growth successively
Al(0.12-0.9)GaAs and n-Al0.9GaAs forms DBR speculums, Al(0.12-0.9)GaAs/Al0.9GaAs lower limit layers, three pairs
Al0.3GaAs/GaAs quantum well structure active areas, Al0.9GaAs/Al(0.12-0.9)GaAs upper limiting layers, 22.5 couples of p-Al0.12GaAs
With p-Al(0.9-0.12)GaAs forms DBR speculums, p-Al0.12GaAs and p-GaAs heavy doping contact layers；
Step 2, using plasma enhanced CVD (PECVD) in one layer of epitaxial wafer superficial growth obtained above
3.2 μm of silica；
Step 3, do photoetching and sputtering technology one layer of sputtering silicon oxide above light hole using inverting glueMetal
Nickel, the nickel in other regions in addition to light hole is peeled off with reference to ultrasound with acetone；
Step 4, the silica using sense coupling method (ICP) etching other regions in addition to light hole,
Etch thicknesses are 2.7 μm, and remaining 0.5 μm prevents from producing channelling effect and control H+implantation depth during H+implantation, so as to complete
Into the making of H+implantation mask；
Step 5, using H+implantation method H is carried out in slice, thin piece obtained above+Injection, first time Implantation Energy is 315keV, the
Secondary Implantation Energy is 250keV, and implantation dosage is 1E15cm twice-2；
Step 6, using photoresist protection to board marker, remove silica with wet etching method；
Step 7, using invert glue do photoetching and sputtering technology directly over injection region surface sputtering thickness be
Ti/Au peripheral electrodes, peel off the metal of light extraction bore region with reference to ultrasound with acetone, i.e., in addition to light aperture region is without Ti/Au, its
He is all covered with Ti/Au in region；
Step 8, using wafer lapping machine by substrate wear down to 400 μm or so, sputteringThe AuGeNi/Au back sides electricity
Pole；
Step 9, slice, thin piece is formed good Ohmic contact, complete the preparation of VCSEL coupling arrays；
Step 10, using PECVD one layer of 550nm of VCSEL coupling arrays superficial growth obtained above silica, utilize
Photoresist does mask, and the silica above Ti/Au peripheral electrodes is etched away into 350nm, and it is one smooth to make silica
Plane；
Step 11, using photoresist mask is done, two above VCSEL coupling array positive electrode pressure welding points are removed with wet etching method
Silica so that the positive electrode pressure welding point of VCSEL coupling arrays comes out, and facilitates pressure welding line and is powered to VCSEL array；
Step 12, using invert glue do photoetching and sputtering technology after above-mentioned corrosion silica surface sputtering thickness beLead end of the Ti/Au films as phase modulation unit, peeled off with acetone combination ultrasound in addition to design section
Ti/Au films；
Step 13, the ito thin film that evaporation thickness is 40nm, mask is done using photoresist, and phase modulation unit is formed using wet etching
ITO strip electrodes, its both ends is connected with above-mentioned Ti/Au films；
Step 14, the silica using one layer of 300nm of PECVD growths, are done mask using photoresist, are etched using wet etching
Go out to need the region and the transmission region that are connected with upper substrate public electrode；
Step 15, the frame glue after gold goal will be adulterated coated in the above-mentioned needs region Nian Jie with upper substrate；
Step 16, surface is coated with to glass substrate that thickness is 80nm ito thin films to being bonded in frame glue, is coated with the ITO side
Down, an osculum is reserved, is then injected into liquid crystal, liquid crystal is filled and moves sheet glass afterwards until completely enclosed liquid crystal.
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| CN112864795A (en) * | 2021-01-26 | 2021-05-28 | 北京工业大学 | Optical chip structure integrated on VCSEL coherent array and MZI array chip and preparation method thereof |
| US20230117688A1 (en) * | 2021-10-18 | 2023-04-20 | Analog Photonics LLC | Optical phased array light shaping |
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| CN109728503A (en) * | 2019-03-20 | 2019-05-07 | 深圳新亮智能技术有限公司 | A kind of uniform VCSEL laser of luminous spot |
| CN110433878A (en) * | 2019-08-21 | 2019-11-12 | 北京工业大学 | A kind of liquid detecting chip system of the optical phase difference based on VCSEL coupling array |
| CN110433878B (en) * | 2019-08-21 | 2021-06-25 | 北京工业大学 | Liquid detection chip based on VCSEL coupling array optical phase difference |
| CN112864795A (en) * | 2021-01-26 | 2021-05-28 | 北京工业大学 | Optical chip structure integrated on VCSEL coherent array and MZI array chip and preparation method thereof |
| US20230117688A1 (en) * | 2021-10-18 | 2023-04-20 | Analog Photonics LLC | Optical phased array light shaping |
| US11960117B2 (en) * | 2021-10-18 | 2024-04-16 | Analog Photonics LLC | Optical phased array light shaping |
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