CN107611779B - The light beam integrated on a kind of VCSEL coupling array and optical phase shifter array chip scans chip - Google Patents
The light beam integrated on a kind of VCSEL coupling array and optical phase shifter array chip scans chip Download PDFInfo
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Abstract
The light beam integrated the invention discloses a kind of VCSEL coupling array and surface optical phase shifter on piece scans chip, belongs to the interleaving techniques field of semiconductor laser technology and light beam scanning technique.The present invention induces the technologies such as anti-waveguide by using H+implantation, photonic crystal or chamber, realizes the coupling between VCSEL array unit, and array each unit launches the consistent coherent light of power.The characteristics of using VCSEL array planar structure, integrates transmitted light phaser array on VCSEL coupling array surface by techniques such as photoetching, sputtering, PECVD, ICP, vapor depositions, to obtain light beam scanning chip small in size, compact-sized, that integrated level is high.It is solved be spatially separated because of laser light source with phaser array in traditional optical phased array light-beam scanner caused by the problems such as volume is big, reliability is low, installation is complicated, have a extensive future.
Description
Technical field
The invention belongs to the interleaving techniques fields of semiconductor laser technology and light beam scanning technique, and in particular to a kind of
The light beam integrated on VCSEL coupling array and optical phase shifter array chip scans chip.
Background technique
Phased array optical technology is a kind of optical technology of light phase generation periodic modulation for making beam wave surface, works as phase
Each unit of modulator array obtain one spatially the phase of linear distribution when, occur that beam wave surface in space inclined
Turn, generates light beam scanning.The technology belongs to the low pure automatically controlled on-mechanical light beam scanning of inertia, scanning speed flexible with beam position
The scanning features such as degree is fast, high resolution, angle driving range are big, it is aobvious in High-performance lasers radar, free space optical communication, laser
Show, the various military and civil field extensive applications such as laser printing and demand.Traditional optical phased array light beam scans dress
Set and be made of laser source, optical system and phaser array, by laser source issue coherent light by optical system collimation and
The equally distributed light beam of power is formed after expanding, and phaser array is incident on, to realize the phased deflection of light beam.Due to laser
What source and phaser array were spatially separated, laser source, optical system and phase shifter require independent mounting bracket
And installation component is fixed, and leads to that light-beam scanner complicated integral structure, volume are big, reliability is low, installation process is complicated, no
It is easy to operate, limit its further development and application.
Vertical cavity surface emitting laser (Vertical-cavity surface-emitting laser, VCSEL) has
Single longitudinal mode, circular light spot, is easily formed the features such as two-dimensional array at Low threshold, make it in terms of there are many solely
Special advantage.In addition, VCSEL itself has the characteristics that planar structure, it just can be relatively easily in VCSEL table using common process
Face integrates the transmitted lights phaser arrays such as liquid crystal phaser array, to obtain, small in size, compact-sized, integrated level is high
Laser beam scans chip.But conventional VCSEL single tube surface optical field distributed pole is uneven, is integrated in its table so that being incident on
The optical power of the optical phase shifter array each unit in face is inconsistent, cannot achieve effective optical beam manipulation.Using VCSEL two dimension battle array
Column can make phaser array each unit obtain identical optical power.However, each luminescence unit of common VCSEL array is mutual
Irrelevant, output light is incoherent light, cannot function as the laser source of phased array light-beam scanner.The present invention uses VCSEL
Coupling array can make the coherent optical powers for being incident on the optical phase shifter array each unit for being integrated in its surface as laser source
Unanimously.It is integrated such as liquid crystal phase shifter battle array on VCSEL coupling array surface by photoetching, sputtering, PECVD, etching isoplanar process
The transmitted lights phaser arrays such as column, thus laser source and phaser array is integrated on the same chip, obtain volume
Small, light-weight, high reliablity, the light beam being easily installed scan chip.By reasonably designing, same phase VCSEL can also be obtained
Coupling array, so that light beam scanning chip obtains excellent beam quality.
Summary of the invention
It is an object of the invention to solve in traditional optical phased array light-beam scanner because of laser light source and phase shifter
Array is spatially separated and leads to that complicated integral structure, volume are big, reliability is low, installation process is complicated, not easy to operate etc. ask
Topic.
Using the VCSEL coupling array of planar structure as laser source, pass through the techniques such as photoetching, sputtering, PECVD, etching
Such as liquid crystal phaser array transmitted light phaser array is integrated on its surface, laser source and phaser array are integrated in
On the same chip, to realize light beam scanning chip small in size, compact-sized, that integrated level is high.
Technical solution of the invention is as follows:
1. inducing the technologies such as anti-waveguide by H+implantation limitation or photonic crystal or chamber, make each luminous list of VCSEL array
The light field of member is coupled in device inside, has fixed phase relation between unit, so that high light beam quality phase can be obtained by preparing
The VCSEL coupling array of dry light output.
2. passing through the works such as photoetching, sputtering, PECVD, etching as laser source using the VCSEL coupling array of planar structure
Skill integrates such as liquid crystal phaser array transmitted light phaser array on its surface, and laser source and phaser array are integrated
On the same chip.
VCSEL coupling array each unit launches the consistent coherent light of power, is uniformly incident on and is integrated in array surface
Transmission-type phaser array.The voltage of phaser array each unit is applied to by adjusting to adjust the phase shift of each unit
Amount keeps the phase for exporting light wave from each phase shifter element identical in particular directions, so that the light wave of the specific direction is mutually grown
The light beam deflection on specific direction is realized in interference.
Cross-sectional, longitudal section schematic diagram and the top view of light beam scanning chip of the invention are respectively such as Fig. 1, figure
Shown in 2 and Fig. 3.
The integrated technique of the light beam scanning chip is as follows: then growth VCSEL epitaxial structure first is infused using proton
Enter, photonic crystal or chamber induce the technologies such as anti-waveguide, prepare VCSEL coupling by techniques such as photoetching, sputtering, PECVD, etchings
Array, to obtain relevant light output；Then use PECVD in VCSEL array surface deposition a layer thickness for the μ m-thick of 50nm~3
SiO2Or SiNxLower substrate of the insulating film as phaser array recycles mask plate, will be in VCSEL array positive electrode pressure welding point
The SiO of side2Or SiNxInsulating film etches away, to realize that the electric current to VCSEL array injects；Then in remaining SiO2Or SiNx
The Au film with a thickness of 100nm~500nm is sputtered on insulating film, using mask plate, by transmission region and other design sections
Au film etch away；Then evaporation thickness is the ito thin film of 20nm~80nm, and mask plate is recycled to etch shape to ito thin film
It is in strip transparent electrode；Upper base of the sheet glass as phaser array of 20nm~80nm ito thin film is vapor-deposited with using lower surface
Plate；Then the surface ITO and lower substrate ITO strip electrode surface spin coating alignment films in upper substrate are dried at 200 DEG C~300 DEG C
Friction orientation after 2~3 hours roasting；Then 1 μm~5 μm gold goals of diameter are adulterated, in liquid crystal cell frame adhesive to realize upper substrate public affairs
Common electrode is electrically connected with lower substrate common electrical pole；Liquid crystal is finally poured into, with antiparallel manner at box, light beam is completed and scans core
Piece integrates.
The VCSEL coupling array includes that H+implantation coupling array, photon crystal coupled array and chamber induction are anti-
Waveguide coupling array etc. can obtain the VCSEL array of relevant light output.
The coupling array laser source surface VCSEL is equipped with M × N number of VCSEL unit, and M, N are greater than 1.
The VCSEL unit of the VCSEL coupling array laser source can be designed to symmetrical rectangular or round, can also set
It counts rectangular to obtain polarization coherent light.
The VCSEL coupling array laser source is using peripheral electrode or grid electrode and other transparent current expansions
Layer carrys out the extension of auxiliary surface electric current.
Lead end of the Au film as phase shifter element and external control circuit.
The ITO bar shaped transparent electrode is laid in above VCSEL coupling array light-emitting units, both ends and Au film
Connection can control the voltage loaded in ITO bar shaped transparent electrode in the voltage on Au film by adjusting load, reach
The purpose for changing phase, realizes the deflection of light beam.
The transmitted light phaser array includes one-dimensional or two-dimentional liquid crystal phaser array, the shifting of AlGaAs optical waveguide
Phase device array, PLZT transparent electro-optic ceramics phaser array etc. can generate the saturating of periodic modulation to the light phase of beam wave surface
Penetrate formula phaser array.
It is had the beneficial effect that brought by the present invention:
VCSEL coupling array is capable of providing uniform high-power coherent light output.The characteristics of using its planar structure, pass through
Conventional processing technology, can be easily by the transmitted lights phase shifter battle array such as VCSEL coupling array and liquid crystal phaser array
It arranges and is combined into the light beam scanning chip that light beam two-dimensional deflection may be implemented in such a way that on piece is integrated, solve traditional laser source
The deficiency being spatially separated with phaser array reduces mounting bracket and other installation components, have it is small in size, light-weight, can
It is high by property, the advantages such as be easily installed.Have in fields such as laser radar, laser printing, free space optical interconnection, photoswitches huge
Application prospect.
Detailed description of the invention
Fig. 1: the lateral sectional drawing of integrating optical beam scanning chip proposed by the present invention；
Fig. 2: longitudinal sectional drawing of integrating optical beam scanning chip proposed by the present invention；
Fig. 3: the top view of integrating optical beam scanning chip proposed by the present invention；
Fig. 4: the VCSEL epitaxial slice structure schematic diagram grown using MOCVD epitaxy；
The epitaxial wafer surface Fig. 5: VCSEL grows silica schematic diagram；
Fig. 6: sputtering and removes the structural schematic diagram after nickel；
Fig. 7: the ICP exposure mask schematic diagram etched；
Fig. 8: the structural schematic diagram after H+implantation；
Fig. 9: the structural schematic diagram after wet etching silica；
Figure 10: sputtering and the top Ti/Au peripheral electrode structural schematic diagram after removing；
Figure 11: the structural schematic diagram after sputtering rear electrode；
Figure 12: VCSEL array surface grows SiO2Structural schematic diagram afterwards；
Figure 13: the SiO above photoetching and wet etching Au electrode pad2Structural schematic diagram afterwards；
Figure 14: sputtering and removes the structural schematic diagram after Au；
Figure 15: being deposited and etches the structural schematic diagram after ITO；
Figure 16: growing and etches SiO2Structural schematic diagram afterwards；
Figure 17: the structural schematic diagram after the frame glue of coating doping gold goal；
Figure 18: liquid crystal is injected and at the structural schematic diagram after box.
In figure: 1, VCSEL epitaxial wafer substrate, 2, N-type DBR, 3, active area, 4, p-type DBR, 5, SiO2, 6, Ni, 7, proton
Injection region, 8, Ti/Au peripheral electrode, 9, back side AuGeNi/Au electrode, 10, SiO2, 11, ito transparent electrode, 12, gold doping ball frame
Glue, 13, top glass substrate, 14, liquid crystal.
Specific embodiment
Embodiment
It is detailed to carry out of the invention by taking H+implantation type VCSEL coupling array surface integrates liquid crystal phaser array as an example
It describes in detail bright.
VCSEL coupling array is introduced respectively below with reference to Fig. 4-Figure 18 to sweep with the light beam integrated on optical phase shifter array chip
Retouch the specific embodiment of the preparation method of chip；
Step 1, using metal organic chemical vapor deposition (MOCVD) on N-GaAs successively 34 pairs of epitaxial growth
n-Al(0.12-0.9)GaAs and n-Al0.9GaAs constitutes DBR reflecting mirror, Al(0.12-0.9)GaAs/Al0.9GaAs lower limit layer, three pairs
Al0.3GaAs/GaAs quantum well structure active area, Al0.9GaAs/Al(0.12-0.9)GaAs upper limiting layer, 22.5 couples of p-Al0.12GaAs
With p-Al(0.9-0.12)GaAs constitutes DBR reflecting mirror, p-Al0.12GaAs and p-GaAs heavy doping contact layer；
Step 2 grows one on epitaxial wafer surface obtained above using plasma enhanced CVD (PECVD)
The silica of 3.2 μm of layer；
Step 3 does photoetching and sputtering technology one layer of sputtering silicon oxide above light hole using reversion glue's
Metallic nickel peels off the nickel in other regions in addition to light hole with acetone in conjunction with ultrasound；
Step 4 utilizes the titanium dioxide in sense coupling method (ICP) etching other regions in addition to light hole
Silicon, etch thicknesses are 2.7 μm, and remaining 0.5 μm prevents from generating channelling effect and control H+implantation depth when H+implantation, thus
Complete the production of H+implantation exposure mask；
Step 5 carries out H in obtained above son using H+implantation method+Injection, first time Implantation Energy are
315keV, second of Implantation Energy is 250keV, and implantation dosage is 1E15cm twice-2；
Step 6 is protected using photoresist to board marker, removes silica with wet etching method；
Step 7, using reversion glue do photoetching and sputtering technology right above injection region surface sputtering with a thickness ofTi/Au peripheral electrode, peel off the metal in light hole region in conjunction with ultrasound with acetone, that is, remove unthreaded hole area
Domain without Ti/Au outside, other regions are all covered with Ti/Au；
Step 8, using wafer lapping machine by substrate wear down to 400 μm or so, sputteringAuGeNi/Au
Rear electrode；
Step 9 makes piece form good Ohmic contact using rapid thermal annealing, completes the preparation of VCSEL coupling array；
Step 10 grows the silica of one layer of 550nm on VCSEL coupling array obtained above surface using PECVD,
Exposure mask is done using photoresist, the silica above Ti/Au peripheral electrode is etched away into 350nm, makes silica one to put down
Whole plane；
Step 11 does exposure mask using photoresist, above wet etching method removal VCSEL coupling array positive electrode pressure welding point
Silica facilitate pressure welding line and supplied to VCSEL array so that the positive electrode pressure welding point of VCSEL coupling array comes out
Electricity；
Step 12 does the silica surface sputtering thickness of photoetching and sputtering technology after above-mentioned corrosion using reversion glue
ForLead end of the Ti/Au film as phase modulation unit, peeled off with acetone combination ultrasound and remove design area
Overseas Ti/Au film；
Step 13, the ito thin film that evaporation thickness is 40nm, do exposure mask using photoresist, form phase modulation using wet etching
The ITO strip electrode of unit, both ends are connected with above-mentioned Ti/Au film；
Step 14, the silica that one layer of 300nm is grown using PECVD, do exposure mask using photoresist, using wet etching
Etch the region and transmission region that needs are connect with upper substrate public electrode；
Frame glue after doping gold goal is coated in the above-mentioned needs region Nian Jie with upper substrate by step 15；
Surface is coated with the glass substrate with a thickness of 80nm ito thin film to being sticked in frame glue by step 16, is coated with that of ITO
One down, reserves an osculum, is then injected into liquid crystal, fills liquid crystal and moves sheet glass later until completely enclosed liquid crystal.
The foregoing is merely better embodiments of the invention, are not intended to limit the invention, all in spirit of the invention
Any modification, replacement and improvement etc. with making under the premise of design, are considered as being included within protection scope of the present invention.
Claims (9)
1. the light beam integrated on a kind of VCSEL coupling array and optical phase shifter array chip scans chip, it is characterised in that: S1.
Anti- guide technology is induced by H+implantation limitation or photonic crystal or chamber, makes the light field of each luminescence unit of VCSEL array in device
Part inner couplings have fixed phase relation between unit, are concerned with light output to prepare and can obtain high light beam quality
VCSEL coupling array；
S2. photoetching, sputtering, PECVD, etching, vapor deposition, liquid are passed through as laser source using the VCSEL coupling array of planar structure
Brilliant molding process integrates liquid crystal transmitted light phaser array on its surface, laser source is integrated in phaser array same
On a chip；
VCSEL coupling array each unit launches the consistent coherent light of power, is uniformly incident on the transmission-type for being integrated in its surface
Phase-shifter array；Be applied to the voltage of phaser array each unit by adjusting and adjust the phase-shift phase of each unit, make from
The phase of each phase-shifter unit output light wave is identical in particular directions, so that the light wave constructive interference of the specific direction, real
Light beam deflection on existing specific direction；
The integrated technique that light beam scans chip is as follows: growth VCSEL epitaxial structure first, then brilliant using H+implantation, photon
Body or chamber induce anti-waveguide coupling mechanism, VCSEL coupling array are prepared by photoetching, sputtering, PECVD, etching technics, to obtain
Must be concerned with light output；Then use PECVD in VCSEL array surface deposition a layer thickness for the SiO of the μ m-thick of 50nm~32Or SiNx
Lower substrate of the insulating film as phaser array recycles mask plate, by the SiO above VCSEL array positive electrode pressure welding point2Or
SiNxInsulating film etches away, to realize that the electric current to VCSEL array injects；Then in remaining SiO2Or SiNxIt is splashed on insulating film
The Au film with a thickness of 100nm~500nm is penetrated, using mask plate, the Au film of transmission region and other design sections is carved
Eating away；Then evaporation thickness is the ito thin film of 20nm~80nm, and recycling mask plate to etch ito thin film, to form bar shaped transparent
Electrode；Upper substrate of the sheet glass of 20nm~80nm ito thin film as phase-shifter array is vapor-deposited with using lower surface；In upper base
Then the surface ITO of plate and lower substrate ITO strip electrode surface spin coating alignment films are toasted 2~3 hours at 200 DEG C~300 DEG C
Friction orientation afterwards；Then 1 μm~5 μm gold goals of diameter are adulterated, in liquid crystal cell frame adhesive to realize upper substrate public electrode under
The electrical connection of substrate common electrical pole；Liquid crystal is finally poured into, with antiparallel manner at box, completes the integrated of light beam scanning chip.
2. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the VCSEL coupling array include H+implantation coupling array, photon crystal coupled array and
Chamber induces anti-waveguide array that can obtain the VCSEL array of relevant light output.
3. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the coupling array laser source surface VCSEL is equipped with M × N number of VCSEL unit, and M, N are greater than 1.
4. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the VCSEL unit of the VCSEL coupling array laser source can be designed to it is symmetrical rectangular or round,
It can also design rectangular to obtain polarization coherent light.
5. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the VCSEL coupling array laser source is using peripheral electrode or grid electrode and other are transparent
Current extending carrys out the extension of auxiliary surface electric current.
6. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: lead end of the Au film as phase shifter element and external control circuit.
7. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the ITO bar shaped transparent electrode is laid in above VCSEL coupling array light-emitting units, both ends
It is connect with Au film, load can be controlled in ITO bar shaped transparent electrode in the voltage on Au film by adjusting load
Voltage achievees the purpose that change phase, realizes the deflection of light beam.
8. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the transmitted light phaser array includes one-dimensional or two-dimentional liquid crystal phaser array, AlGaAs
Optical waveguide phaser array, PLZT transparent electro-optic ceramics phaser array can generate the light phase of beam wave surface and periodically adjust
The transmission-type phaser array of system.
9. the light beam integrated on a kind of VCSEL coupling array according to claim 1 and optical phase shifter array chip scans
Chip, it is characterised in that: the preparation method of the light beam scanning chip integrated on VCSEL coupling array and optical phase shifter array chip
Specific embodiment；
Step 1, using metal organic chemical vapor deposition (MOCVD) on N-GaAs successively 34 couples of n- of epitaxial growth
Al(0.12-0.9)GaAs and n-Al0.9GaAs constitutes DBR reflecting mirror, Al(0.12-0.9)GaAs/Al0.9GaAs lower limit layer, three pairs
Al0.3GaAs/GaAs quantum well structure active area, Al0.9GaAs/Al(0.12-0.9)GaAs upper limiting layer, 22.5 couples of p-
Al0.12GaAs and p-Al(0.9-0.12)GaAs constitutes DBR reflecting mirror, p-Al0.12GaAs and p-GaAs heavy doping contact layer；
Step 2 grows one layer on epitaxial wafer surface obtained above using plasma enhanced CVD (PECVD)
3.2 μm of silica；
Step 3 does photoetching and sputtering technology one layer of sputtering silicon oxide above light hole using reversion glueMetal
Nickel peels off the nickel in other regions in addition to light hole with acetone in conjunction with ultrasound；
Step 4, the silica that other regions in addition to light hole are etched using sense coupling method (ICP),
Etch thicknesses are 2.7 μm, and remaining 0.5 μm prevents from generating channelling effect and control H+implantation depth when H+implantation, thus complete
At the production of H+implantation exposure mask；
Step 5 carries out H in obtained above son using H+implantation method+Injection, first time Implantation Energy are 315keV, the
Secondary Implantation Energy is 250keV, and implantation dosage is 1E15cm twice-2；
Step 6 is protected using photoresist to board marker, removes silica with wet etching method；
Step 7, using reversion glue do photoetching and sputtering technology right above injection region surface sputtering with a thickness of
Ti/Au peripheral electrode, peel off the metal in light hole region in conjunction with ultrasound with acetone, i.e., in addition to light aperture region is without Ti/Au,
He is all covered with Ti/Au in region；
Step 8, using wafer lapping machine by substrate wear down to 400 μm or so, sputteringThe back side AuGeNi/Au electricity
Pole；
Step 9 makes piece form good Ohmic contact using rapid thermal annealing, completes the preparation of VCSEL coupling array；
Step 10 grows the silica of one layer of 550nm on VCSEL coupling array obtained above surface using PECVD, utilizes
Photoresist does exposure mask, and the silica above Ti/Au peripheral electrode is etched away 350nm, make silica one it is smooth
Plane；
Step 11 does exposure mask using photoresist, with two above wet etching method removal VCSEL coupling array positive electrode pressure welding point
Silica facilitates pressure welding line and powers to VCSEL array so that the positive electrode pressure welding point of VCSEL coupling array comes out；
Step 12, using reversion glue do photoetching and sputtering technology after above-mentioned corrosion silica surface sputtering with a thickness ofLead end of the Ti/Au film as phase modulation unit, peeled off with acetone combination ultrasound and remove design section
Outer Ti/Au film；
Step 13, the ito thin film that evaporation thickness is 40nm, do exposure mask using photoresist, form phase modulation unit using wet etching
ITO strip electrode, both ends are connected with above-mentioned Ti/Au film；
Step 14, the silica that one layer of 300nm is grown using PECVD, are done exposure mask using photoresist, are etched using wet etching
The region for needing to connect with upper substrate public electrode out and transmission region；
Frame glue after doping gold goal is coated in the above-mentioned needs region Nian Jie with upper substrate by step 15；
Surface is coated with the glass substrate with a thickness of 80nm ito thin film to being sticked in frame glue by step 16, is coated with the side of ITO
Downward, an osculum is reserved, liquid crystal is then injected into, liquid crystal is filled and moves sheet glass later until completely enclosed liquid crystal.
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| CN108181745B (en) * | 2018-02-08 | 2020-08-25 | 京东方科技集团股份有限公司 | Liquid crystal phase shifter, phase shifting method and manufacturing method thereof |
| CN108808435B (en) * | 2018-06-19 | 2020-07-28 | 河北科技大学 | Laser amplification device driven by voltage |
| CN109728503A (en) * | 2019-03-20 | 2019-05-07 | 深圳新亮智能技术有限公司 | A kind of uniform VCSEL laser of luminous spot |
| CN110433878B (en) * | 2019-08-21 | 2021-06-25 | 北京工业大学 | Liquid detection chip based on VCSEL coupling array optical phase difference |
| CN112864795B (en) * | 2021-01-26 | 2022-09-09 | 北京工业大学 | Optical chip structure integrated on VCSEL coherent array and MZI array chip and preparation method thereof |
| US11960117B2 (en) * | 2021-10-18 | 2024-04-16 | Analog Photonics LLC | Optical phased array light shaping |
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