CN107604428A - A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique - Google Patents
A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique Download PDFInfo
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- CN107604428A CN107604428A CN201710971901.9A CN201710971901A CN107604428A CN 107604428 A CN107604428 A CN 107604428A CN 201710971901 A CN201710971901 A CN 201710971901A CN 107604428 A CN107604428 A CN 107604428A
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Abstract
The invention discloses a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique, including body of heater, water cooling tube, bell, silica crucible and secondary charging device, the top of body of heater is provided with the bell for sealing, the interspersed secondary charging device being provided with for feeding in the middle part of bell, the inside of body of heater is provided with the silica crucible for holding silicon material, the outside of silica crucible is provided with the heating plate for heating and melting silicon material, the outside of heating plate is provided with the water cooling tube for being used for silicon material after cooling is melted, the one end of the both ends of water cooling tube respectively with two connecting tubes communicates, the other end of two connecting tubes both passes through the side wall of body of heater, one of connecting tube is provided with magnetic valve.By being crystallized before charging by degree of cooling by silicon material in stove, solid is formed, solid silicon material is added in the crystalline solid in stove during charging, avoids silicon material from splashing the risk in other graphite pieces so as to reach, appropraite condition is created for follow-up crystal pulling.
Description
Technical field
The present invention relates to industrial production technology field, specially a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and work
Skill.
Background technology
Monocrystalline silicon is a kind of active nonmetalloid of comparison, has diamond lattice, and crystal is hard and crisp, has metal light
Pool, can be conductive, but conductance increases not as good as metal, and as temperature raises, and has semiconductor property, is the weight of crystalline material
Part is wanted, the forward position in new material development；Monocrystalline silicon can be used for diode level, rectifying device level, circuit-level and
Production and the deep processing manufacture of solar battery grade single crystal product article, its subsequent product integrated circuit and semiconductor separation part are wide
It is general to be applied to every field；In today that photovoltaic technology and microminiature semiconductor inverter technology develop rapidly, silicon single crystal is utilized
Solar energy directly can be converted into luminous energy by the solar cell produced, realize the beginning for green energy resource revolution of marching toward.
At present, secondary charging has all been carried out in company's monocrystalline workshop, but is splashed silicon during charging and annoying always
Whole photovoltaic industry, because splashing silicon easily causes bad Cheng Jing, time and manpower are wasted, or even whole stove silicon can be caused because splashing silicon
Material can not pull to hang polycrystalline situation, add the risk of cost of idleness.Therefore we make improvement to this, propose a kind of monocrystalline
Silicon continuous production crystallizes charging (feeding) equipment and technique.
The content of the invention
For solve prior art existing for monocrystalline workshop during secondary charging can with silicon is splashed the defects of, the present invention carries
Charging (feeding) equipment and technique are crystallized for a kind of monocrystalline silicon continuous production.
In order to solve the above-mentioned technical problem, the invention provides following technical scheme：
A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and technique, including body of heater, water cooling tube, bell, quartz
Crucible and secondary charging device, the top of the body of heater are provided with the bell for sealing, and interspersed be provided with the middle part of the bell is used
In the secondary charging device of charging, the inside of the body of heater is provided with the silica crucible for holding silicon material, the outside of the silica crucible
Provided with the heating plate for heating and melting silicon material, the outside of the heating plate is provided with the water cooling tube for being used for silicon material after cooling is melted,
The one end of the both ends of the water cooling tube respectively with two connecting tubes communicates, and the other end of two connecting tubes both passes through body of heater
Side wall, one of them described connecting tube are provided with magnetic valve, and the bottom of the silica crucible is fixed with the pallet for support,
The bottom of the pallet is fixedly connected by connecting shaft with the rotating shaft of motor, and the body of heater is provided with control cabinet, the control cabinet
Upper rotating switch, heater switch and cooling switch, the motor of being embedded with respectively is electrically connected with rotating switch, the heating plate
It is electrically connected with heater switch, the magnetic valve is electrically connected with cooling switch, and the rotating switch, heater switch and cooling are opened
Guan Jun is electrically connected with external power supply.
As a preferred technical solution of the present invention, the secondary charging device is by contiguous block, motion bar, baffle plate and set
Cylinder composition, the middle part of the sleeve and bell is interspersed to be connected, and contiguous block and baffle plate are respectively equipped with the top and bottom of the sleeve,
One end of the baffle plate and the side of sleeve bottom end are connected by articulate, and the other end of the baffle plate passes through motion bar and company
The side for connecing block is fixedly connected.
As a preferred technical solution of the present invention, the avris of the sleeve is fixed with flange adjustable track, and covers
Mounting flange is arranged with cylinder, the bottom of the mounting flange is fixedly connected with the top of bell, the avris of the mounting flange
Offer perforate, the aperture of the perforate and the aperture of notch on flange adjustable track match setting.
As a preferred technical solution of the present invention, the connecting tube being connected with described water cooling tube one end connects with external water source
Connect, the connecting tube being connected with the water cooling tube other end is connected with drainage pipeline.
As a preferred technical solution of the present invention, comprise the following steps；
S1：Feeding；
S2：Heating and melting；
S3：Cool；
S4：Secondary charging.
As a preferred technical solution of the present invention, the S1 steps include opening bell and list are put into silica crucible
Crystal silicon material, and the monocrystalline silicon material for needing secondary charging is added into sleeve, then cover bell.
As a preferred technical solution of the present invention, the S2 steps include opening rotating switch and heater switch causes
Monocrystalline silicon material heating and melting, the work of motor can be caused silica crucible at the uniform velocity by motor and heating plate work, heating plate work
Rotate, and then cause the uniform heating and melting of monocrystalline silicon material in silica crucible.
As a preferred technical solution of the present invention, the S3 steps include closing heater switch and heating plate are stopped
Work, while open cooling switch and cause solenoid valve conduction, and then cause external cooling water continually to pass through water cooling tube, and then
So that furnace interior environment temperature reduction, that is, cause the monocrystalline silicon material crystallization in silica crucible.
As a preferred technical solution of the present invention, the S4 steps include by lower connecting block baffle plate being opened, and enter
And can make it that the monocrystalline silicon material in sleeve is poured into silica crucible, complete secondary charging operation.
The beneficial effects of the invention are as follows：This kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique, by before charging
Crystallized by degree of cooling by silicon material in stove, form solid, solid silicon material is added in the crystalline solid in stove during charging, so as to reach
To avoiding silicon material from splashing the risk in other graphite pieces, appropraite condition is created for follow-up crystal pulling.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Apply example to be used to explain the present invention together, be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and the structural representation of technique；
Fig. 2 is a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and the water cooling tube structural representation of technique；
Fig. 3 is the secondary charging device structural representation of a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and technique
Figure；
Fig. 4 is a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and the mounting flange structural representation of technique；
Fig. 5 is the control cabinet facing structure signal of a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and technique
Figure.
In figure：1st, secondary charging device；2nd, bell；3rd, body of heater；4th, heating plate；5th, control cabinet；6th, motor；7th, pallet；8、
Silica crucible；9th, water cooling tube；10th, connecting tube；11st, rotating switch；12nd, heater switch；13rd, cooling switch；14th, magnetic valve；15、
Sleeve；16th, mounting flange；17th, baffle plate；18th, motion bar；19th, contiguous block；20th, flange adjustable track；21st, perforate.
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein preferred real
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment：As Figure 1-5, a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment of the present invention and technique, including stove
Body 3, water cooling tube 9, bell 2, silica crucible 8 and secondary charging device 1, the top of body of heater 3 are provided with the bell 2 for sealing, stove
The interspersed secondary charging device 1 being provided with for feeding in the middle part of lid 2, the inside of body of heater 3 are provided with the silica crucible 8 for holding silicon material,
The outside of silica crucible 8 is provided with for after cooling thawing provided with the heating plate 4 for heating and melting silicon material, the outside of heating plate 4
The water cooling tube 9 of silicon material, the one end of the both ends of water cooling tube 9 respectively with two connecting tubes 10 communicate, the other end of two connecting tubes 10
The side wall of body of heater 3 is both passed through, one of connecting tube 10 is provided with magnetic valve 14, and the bottom of silica crucible 8, which is fixed with, to be used for
The pallet 7 of support, the bottom of pallet 7 are fixedly connected by connecting shaft with the rotating shaft of motor 6, and body of heater 3 is provided with control cabinet 5, control
Rotating switch 11, heater switch 12 and cooling switch 13 are embedded with case 5 processed respectively, motor 6 is electrically connected with rotating switch 11,
Heating plate 4 is electrically connected with heater switch 12, and magnetic valve 14 is electrically connected with cooling switch 13, rotating switch 11, heater switch
12 and cooling switch 13 with external power supply be electrically connected with.
Further, secondary charging device 1 is made up of contiguous block 19, motion bar 18, baffle plate 17 and sleeve 15, sleeve 15 with
The interspersed connection in the middle part of bell 2, the top and bottom of sleeve 15 are respectively equipped with contiguous block 19 and baffle plate 17, one end of baffle plate 17 with
The side of the bottom of sleeve 15 is connected by articulate, and the other end of baffle plate 17 is consolidated by the side of motion bar 18 and contiguous block 19
Fixed connection, adds monocrystalline silicon material first into sleeve 15, when needing to carry out secondary charging into silica crucible 8, by pressing
Contiguous block 19 causes motion bar 18 to move downward, because the side of one end and the bottom of sleeve 15 of baffle plate 17 is connected by articulate
Connecing, the other end of baffle plate 17 is fixedly connected by motion bar 18 with the side of contiguous block 19, and then baffle plate 17 is opened, this
When sleeve 15 in monocrystalline silicon material will be poured into silica crucible 8.
Further, the avris of sleeve 15 is fixed with flange adjustable track 20, and is arranged with mounting flange on sleeve 15
16, the bottom of mounting flange 16 is fixedly connected with the top of bell 2, and the avris of mounting flange 16 offers perforate 21, perforate 21
Aperture and flange adjustable track 20 on the aperture of notch match settings, user can adjust sleeve 15 according to actual use situation
Upright position, i.e. then trip bolt inserts perforate 21 and flange apart from the position that silica crucible 8 is open by regulating fender 17
On adjustable track 20 in notch, you can secondary charging device 1 is fixed on bell 2 by realization.
Further, the connecting tube 10 being connected with the one end of water cooling tube 9 is connected with external water source, is connected with the other end of water cooling tube 9
The connecting tube 10 connect is connected with drainage pipeline, when opening cooling switch 13 magnetic valve 14 can be caused to turn on, and then cause outer water receiving
In source stream to water cooling tube 9, the water of circulation can take away the temperature of the internal environment of body of heater 3, realize the function of water cooling.
Further, comprise the following steps；
S1：Feeding；
S2：Heating and melting；
S3：Cool；
S4：Secondary charging.
Further, S1 steps are put into monocrystalline silicon material into silica crucible 8 including opening bell 2, and add into sleeve 15
Enter to need the monocrystalline silicon material of secondary charging, then cover bell 2.
Further, S2 steps include opening rotating switch 11 and heater switch 12 causes motor 6 and heating plate 4 to work,
The work of heating plate 4 can be by monocrystalline silicon material heating and melting, and the work of motor 6 can cause the uniform rotation of silica crucible 8, and then cause stone
The uniform heating and melting of monocrystalline silicon material in English crucible 8.
Further, S3 steps include closing heater switch 12 so that heating plate 4 is stopped, while opens cooling switch
13 cause magnetic valve 14 to turn on, and then cause external cooling water continually to pass through water cooling tube 9, and then cause the inner loop of body of heater 3
Border cools, that is, causes the monocrystalline silicon material crystallization in silica crucible 8.
Further, S4 steps include by lower connecting block 19 baffle plate 17 being opened, and then can cause in sleeve 15
Monocrystalline silicon material is poured into silica crucible 8, completes secondary charging operation.
Cooled before secondary charging by the water flowing silica crucible 8 of water cooling tube 9, and then cause silicon material crystallization, formed solid
Body, then solid silicon material is added in the crystalline solid in stove by secondary charging device 1, avoids silicon material from splashing it so as to reach
Risk in his graphite piece, appropraite condition is created for rear thread crystal pulling.
This kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique, by before charging by degree of cooling by silicon material in stove
Crystallization, forms solid, solid silicon material is added in the crystalline solid in stove during charging, avoids silicon material from splashing other stones so as to reach
Risk on black part, appropraite condition is created for follow-up crystal pulling.
Finally it should be noted that：The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention,
Although the present invention is described in detail with reference to the foregoing embodiments, for those skilled in the art, it still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic.
Within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., it should be included in the present invention's
Within protection domain.
Claims (9)
1. a kind of monocrystalline silicon continuous production crystallizes charging (feeding) equipment, including body of heater (3), water cooling tube (9), bell (2), silica crucible
(8) and secondary charging device (1), it is characterised in that the top of the body of heater (3) is provided with the bell (2) for sealing, the stove
The interspersed secondary charging device (1) being provided with for feeding in middle part of (2) is covered, the inside of the body of heater (3), which is provided with, holds silicon material
Silica crucible (8), the outside of the silica crucible (8) are provided with the heating plate (4) for heating and melting silicon material, the heating plate
(4) outside is provided with the water cooling tube (9) for being used for silicon material after cooling is melted, and the both ends of the water cooling tube (9) are connected with two respectively
One end of pipe (10) communicates, and the other end of two connecting tubes (10) both passes through the side wall of body of heater (3), one of them described company
Adapter (10) is provided with magnetic valve (14), and the bottom of the silica crucible (8) is fixed with the pallet (7) for support, described
The bottom of pallet (7) is fixedly connected by connecting shaft with the rotating shaft of motor (6), and the body of heater (3) is provided with control cabinet (5), institute
State be embedded with respectively on control cabinet (5) rotating switch (11), heater switch (12) and cooling switch (13), the motor (6) with
Rotating switch (11) is electrically connected with, and the heating plate (4) is electrically connected with heater switch (12), the magnetic valve (14) and cooling
Switch (13) to be electrically connected with, the rotating switch (11), heater switch (12) and cooling switch (13) are electrical with external power supply
Connection.
A kind of 2. monocrystalline silicon continuous production crystallization charging (feeding) equipment according to claim 1, it is characterised in that it is described secondary plus
Material device (1) is made up of contiguous block (19), motion bar (18), baffle plate (17) and sleeve (15), the sleeve (15) and bell (2)
The interspersed connection in middle part, be respectively equipped with contiguous block (19) and baffle plate (17), the baffle plate at the top and bottom of the sleeve (15)
(17) one end is connected with the side of sleeve (15) bottom by articulate, and the other end of the baffle plate (17) passes through motion bar
(18) side with contiguous block (19) is fixedly connected.
A kind of 3. monocrystalline silicon continuous production crystallization charging (feeding) equipment according to claim 2, it is characterised in that the sleeve
(15) avris is fixed with flange adjustable track (20), and mounting flange (16), the fixation are arranged with sleeve (15)
The bottom of blue (16) is fixedly connected with the top of bell (2), and the avris of the mounting flange (16) offers perforate (21), described
The aperture of perforate (21) and the aperture of notch on flange adjustable track (20) match setting.
4. a kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment according to claim 1, it is characterised in that with the water cooling
The connecting tube (10) of pipe (9) one end connection is connected with external water source, the connecting tube (10) being connected with the water cooling tube (9) other end
It is connected with drainage pipeline.
5. a kind of monocrystalline silicon continuous production crystallization charging technology according to claim 1, it is characterised in that including following step
Suddenly；
S1：Feeding；
S2：Heating and melting；
S3：Cool；
S4：Secondary charging.
A kind of 6. monocrystalline silicon continuous production crystallization charging technology according to claim 5, it is characterised in that the S1 steps
Monocrystalline silicon material is put into silica crucible (8) including opening bell (2), and the list for needing secondary charging is added into sleeve (15)
Crystal silicon material, then cover bell (2).
A kind of 7. monocrystalline silicon continuous production crystallization charging technology according to claim 5, it is characterised in that the S2 steps
Cause motor (6) and heating plate (4) work, heating plate (4) work meeting including opening rotating switch (11) and heater switch (12)
By monocrystalline silicon material heating and melting, the work of motor (6) can cause silica crucible (8) uniform rotation, and then cause silica crucible (8)
The interior uniform heating and melting of monocrystalline silicon material.
A kind of 8. monocrystalline silicon continuous production crystallization charging technology according to claim 5, it is characterised in that the S3 steps
Including closing heater switch (12) heating plate (4) is stopped, while opens cooling switch (13) and cause magnetic valve (14)
Conducting, and then cause external cooling water continually to pass through water cooling tube (9), and then cause the cooling of body of heater (3) internal environment, even if
Obtain the monocrystalline silicon material crystallization in silica crucible (8).
A kind of 9. monocrystalline silicon continuous production crystallization charging technology according to claim 5, it is characterised in that the S4 steps
Including causing baffle plate (17) to open by lower connecting block (19), and then the monocrystalline silicon material in sleeve (15) can be caused to pour into quartzy earthenware
In crucible (8), secondary charging operation is completed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710971901.9A CN107604428A (en) | 2017-10-18 | 2017-10-18 | A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique |
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| CN201710971901.9A CN107604428A (en) | 2017-10-18 | 2017-10-18 | A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique |
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| CN201710971901.9A Pending CN107604428A (en) | 2017-10-18 | 2017-10-18 | A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030223A (en) * | 2020-07-13 | 2020-12-04 | 大同新成新材料股份有限公司 | Semiconductor graphite crucible for thermal field of single crystal furnace and use method thereof |
| CN113337884A (en) * | 2020-03-03 | 2021-09-03 | 隆基绿能科技股份有限公司 | Single crystal furnace charging system |
| CN114164487A (en) * | 2022-02-10 | 2022-03-11 | 杭州中欣晶圆半导体股份有限公司 | Quartz feeding system for transversely stacking polycrystalline silicon raw materials and lossless feeding method |
| CN114395796A (en) * | 2021-12-13 | 2022-04-26 | 青海高景太阳能科技有限公司 | Single crystal furnace capable of intelligently controlling water flow |
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| WO2010058980A2 (en) * | 2008-11-20 | 2010-05-27 | Siltron Inc. | Single crystal growing apparatus |
| CN204265883U (en) * | 2014-11-13 | 2015-04-15 | 宁晋松宫电子材料有限公司 | A kind of vertical pulling method single crystal preparation stove with secondary charging device |
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010058980A2 (en) * | 2008-11-20 | 2010-05-27 | Siltron Inc. | Single crystal growing apparatus |
| CN204265883U (en) * | 2014-11-13 | 2015-04-15 | 宁晋松宫电子材料有限公司 | A kind of vertical pulling method single crystal preparation stove with secondary charging device |
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113337884A (en) * | 2020-03-03 | 2021-09-03 | 隆基绿能科技股份有限公司 | Single crystal furnace charging system |
| CN112030223A (en) * | 2020-07-13 | 2020-12-04 | 大同新成新材料股份有限公司 | Semiconductor graphite crucible for thermal field of single crystal furnace and use method thereof |
| CN114395796A (en) * | 2021-12-13 | 2022-04-26 | 青海高景太阳能科技有限公司 | Single crystal furnace capable of intelligently controlling water flow |
| CN114164487A (en) * | 2022-02-10 | 2022-03-11 | 杭州中欣晶圆半导体股份有限公司 | Quartz feeding system for transversely stacking polycrystalline silicon raw materials and lossless feeding method |
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Application publication date: 20180119 |