CN107592076A - A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology - Google Patents
A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology Download PDFInfo
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- CN107592076A CN107592076A CN201710841107.2A CN201710841107A CN107592076A CN 107592076 A CN107592076 A CN 107592076A CN 201710841107 A CN201710841107 A CN 201710841107A CN 107592076 A CN107592076 A CN 107592076A
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- nmos tube
- inductance
- resistance
- fixed capacity
- controlled oscillator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
- H03B5/1287—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a quality factor, e.g. Q factor of the frequency determining element
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
- H03B5/129—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a bias voltage or a power supply
Abstract
The invention discloses a kind of transformer coupled voltage controlled oscillator based on subthreshold value technology, core oscillating circuit and output buffer stage circuit including interconnection, the core oscillating circuit includes inductance capacitance resonant tank and negative resistance produces loop, main coil differential inductance L1 and secondary inductance L2 is magnetically coupled by transformer device structure on inductance capacitance resonant tank, negative resistance produces loop and is made up of the NMOS tube M1 and NMOS tube M2 of cross coupling structure, the NMOS tube M1 that negative resistance is produced in loop is connected with main coil inductance L1 in inductance capacitance resonant tank and fixed capacity C1 and contact.The present invention passes through foregoing circuit, take the method for the differential inductance in major loop being coupled and being removed tail current by transformer device structure with the individual pen inductance in subloop, phase noise and bias voltage are reduced, realizes ultra low voltage power supply, the design of super low-power consumption.
Description
Technical field
The present invention relates to field of radio frequency circuit design, and in particular to a kind of based on the transformer coupled of subthreshold value technology
Voltage controlled oscillator.
Background technology
With the arrival of vehicle intellectualized, car networking, safety vehicle and new-energy automobile epoch, the use of automobile chip
It is more extensive.For it is also proposed higher and higher challenge applied to the chip design to be communicated between automobile.Auto communication chip
Work it is generally necessary to as keep prolonged as possible and avoid consuming the electric energy of excessive vehicle.For applying in wireless radiofrequency
For the phase-locked loop frequency synthesizer of receiver, voltage controlled oscillator is typically the module for wherein most consuming electric energy.In order to consume
On the premise of power consumption as small as possible, the performance of holding circuit, the operating voltage of circuit is reduced, whole circuit is worked as far as possible
It is the method for best reduction circuit power consumption in subthreshold region.But the operating voltage for reducing circuit simultaneously also can limiting circuit
In signal amplitude, the signal to noise ratio of whole circuit can be so influenceed, so as to which the performance of the phase noise of circuit can be influenceed.Existing
In some wireless communication systems, voltage controlled oscillator obtains smaller phase noise table typically by the power consumption of increase circuit
It is existing, and voltage controlled oscillator as a module for needing to consume larger power consumption, it is necessary to while less phase noise is obtained
Wish that it is operated in the state of consumption minimum power consumption again, this needs designer when voltage controlled oscillator is designed to phase noise
Preferable compromise is made with power consumption.Power in existing ultra low voltage, would generally be adopted in the voltage controlled oscillator design of super low-power consumption
Special process is taken to improve the methods of the quality factor of inductance capacitance resonant tank to improve the performance of phase noise performance,
It is but ineffective.In the design of existing voltage controlled oscillator, the structure of current offset is usually taken, i.e., add in circuit by
The current source circuit that NMOS tube or PNMOS pipes are built provides current offset for circuit, the presence of tube of current in this circuit structure
Required bias voltage can be caused to raise, and increase power consumption.
The content of the invention
The technical problems to be solved by the invention are to reduce the phase noise and bias voltage of voltage controlled oscillator, are reduced voltage-controlled
The power consumption that oscillator is consumed is, and it is an object of the present invention to provide a kind of transformer coupled voltage controlled oscillator based on subthreshold value technology, takes
The method that differential inductance in major loop is coupled with the individual pen inductance in subloop by transformer device structure, improve transformation
The quality factor of device and inductance capacitance resonant tank, reduce phase noise；The design for removing tail current pipe is taken, so as to reduce
Required bias voltage, realize ultra low voltage power supply, the design of super low-power consumption.
The present invention is achieved through the following technical solutions：
A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology, including the core oscillating circuit of interconnection and
Buffer stage circuit is exported, the core oscillating circuit includes inductance capacitance resonant tank and negative resistance produces loop, and inductance capacitance is humorous
The main coil differential inductance L1 and secondary inductance L2 on loop that shakes is magnetically coupled by transformer device structure, and negative resistance produces loop
It is made up of the NMOS tube M1 and NMOS tube M2 of cross coupling structure, negative resistance produces drain electrode and the inductance electricity of the NMOS tube M1 in loop
Hold main coil inductance L1 in resonant tank with fixed capacity C1 and contact to be connected, NMOS tube M2 drain electrode and inductance capacitance resonance return
In road main coil inductance L1 and fixed capacity C3's and contact be connected.
Inductance in the present invention shakes the differential inductance in main oscillations loop with secondary using the design of transformer device structure
The individual pen inductance swung in loop is coupled, and compared with two series inductances of traditional structure, improves the quality factor of inductance, can
The obvious phase noise for reducing voltage controlled oscillator；Simultaneously because intercoupling between main coil and secondary coil, required for reduction
Inductor size, chip area needed for reduction.
In available circuit topological structure, the design of tail current source is employed behind cross-couplings pipe pair, introduces NMOS
Pipe M3 provides current offset for cross-couplings pipe, so when supply voltage changes, can ensure inclined in circuit
Put electric current not have greatly changed with bias voltage, but tail current source needs higher supply voltage all to ensure
NMOS tube is operated in saturation region, simultaneously because using NMOS tube as tail current pipe, can introduce extra noise, make circuit
Phase noise performance deteriorates.The topological structure that the present invention takes is gone compared with traditional voltage controlled oscillator topological structure shown in Fig. 2
Except the tail current source in traditional structure, so as to reduce required bias voltage, ultra low voltage power supply, ultralow work(are realized
The design of consumption.This circuit structure is voltage offset electric circuit, and the bias current in circuit is determined by supply voltage, due to from power supply
Anode to the transistor for not having cascade between ground, this circuit is relatively adapted to work at lower supply voltages, so as to real
Existing low power dissipation design；Simultaneously because eliminating the NMOS tube for serving as tail current source, compared to the voltage controlled oscillator of traditional structure, reduce
Due to tail current NMOS tube introduced phase noise, so as to reduce the source of phase noise, what the present invention was taken opens up
Flutterring structure has more preferable phase noise performance.
Preferably, the inductance capacitance resonant tank includes main coil differential inductance L1, secondary inductance L2, fixed electricity
Hold C1, fixed capacity C2 and difference varactor Cv, the main coil differential inductance L1 and secondary inductance L2 and pass through change
Magnetic coupling occurs for depressor structure；Main coil differential inductance L1 common tap end is connected with VDD power supply positive voltages, main coil difference
The positive pole one end of the other both ends of inductance L1 respectively with fixed capacity C1 positive poles and fixed capacity C2 is connected, and fixed capacity C1's is another
End is extremely connected with the one of difference varactor Cv, the fixed capacity C2 other end and difference varactor Cv another pole phase
Even, the input Vcont of difference varactor Cv public termination voltage control signal.
Preferably, resistance R1 and resistance R2, resistance R1 one end connection difference varactor Cv1 positive pole, electricity are included
Hinder R1 other ends ground connection, a resistance R1 one end connection difference varactor Cv pole, resistance R1 other ends ground connection, resistance R2 mono-
End connection difference varactor Cv another pole, resistance R2 other ends ground connection.
Preferably, the drain electrode of the NMOS tube M1 in the negative resistance generation loop is connected with NMOS tube M2 grid, NMOS tube
M1 grid is connected with NMOS tube M2 drain electrode, and the source electrode of the source electrode and NMOS tube M2 of the NMOS tube M1 is joined directly together, NMOS
Pipe M1 and NMOS tube M2's and contact be directly grounded.The topological structure that the present invention takes and traditional voltage controlled oscillator topological structure phase
Than eliminating the tail current source in traditional structure, this circuit structure is voltage offset electric circuit, and the bias current in circuit is by electricity
Source voltage determines, because the anode from power supply is relatively adapted to relatively low to the transistor for not having cascade ground, this circuit
Worked under supply voltage, so as to realize low power dissipation design；Simultaneously because the NMOS tube for serving as tail current source is eliminated, compared to tradition
The voltage controlled oscillator of structure, reduce due to the introduced phase noise of tail current NMOS tube, so as to reduce phase noise
Source, so the topological structure that the present invention is taken has more preferable phase noise performance.
Preferably, exporting buffer stage circuit includes positive phase output buffer stage circuit and minus phase output buffer stage circuit,
The signal input part of positive phase output buffer stage circuit is connected with NMOS tube M2 drain electrode, and minus phase exports the letter of buffer stage circuit
Number output end is connected with NMOS tube M1 drain electrode.
Preferably, positive phase output buffer stage circuit is identical with minus phase output buffer stage circuit topological structure.
Preferably, positive phase output buffer stage circuit includes fixed capacity C4, fixed capacity C5, NMOS tube M3, NMOS tube
M4, resistance R3 and resistance R4, fixed capacity C4 one end are connected with NMOS tube M2 drain electrode, the grid phase of the other end and NMOS tube M3
Even；NMOS tube M3 grid is connected with resistance R3 one end, resistance R3 another termination Vbias power supplys；NMOS tube M3 drain electrode
It is connected with resistance R4 one end, resistance R4 another termination Vbias power supplys；The drain electrode phase of NMOS tube M3 source electrode and NMOS tube M4
Even, NMOS tube M3 source electrode is also connected with fixed capacity C5 one end, the positive of fixed capacity C5 another termination voltage controlled oscillator
Position signal output port V+, NMOS tube M4 source ground.
Preferably, minus phase output buffer stage circuit includes fixed capacity C6, fixed capacity C7, NMOS tube M5, NMOS tube
M6, resistance R5 and resistance R6, fixed capacity C6 one end are connected with NMOS tube M1 drain electrode, the grid phase of the other end and NMOS tube M5
Even；NMOS tube M5 grid is connected with resistance R5 one end, resistance R5 another termination Vbias power supplys；NMOS tube M5 drain electrode
It is connected with resistance R6 one end, resistance R6 another termination Vbias power supplys；The drain electrode phase of NMOS tube M5 source electrode and NMOS tube M6
Even, NMOS tube M5 source electrode is also connected with fixed capacity C7 one end, the positive of fixed capacity C7 another termination voltage controlled oscillator
Position signal output port V-, NMOS tube M6 source ground.
Preferably, the circuit is integrated using 0.13 μm of BiCMOS technique of IBM standards.By by the difference in major loop
Inductance is coupled with the individual pen inductance in subloop by transformer device structure, and while inductance area is reduced, increase LC is humorous
Shake the quality factor in loop, to improve the performance of the phase noise of voltage controlled oscillator.Relatively low supply voltage is used simultaneously, is made voltage-controlled
Oscillator tank is operated in sub-threshold status, realizes relatively low power consumption.Meanwhile including in technique used by this circuit
The PN junction varactor of differential configuration, compared to the NMOS in other standards CMOS technology or pmos type varactor, tool
There is the characteristics of quality factor are high, can further optimize the phase noise performance of the design.
Preferably, secondary inductance L2 is individual pen inductance.
The present invention compared with prior art, has the following advantages and advantages：
1st, the present invention in inductance using transformer device structure design, by the differential inductance in main oscillations loop with time
Individual pen inductance in oscillation circuit is coupled, and compared with two series inductances of traditional structure, improves the quality factor of inductance, energy
Enough obvious phase noises for reducing voltage controlled oscillator；Simultaneously because intercoupling between main coil and secondary coil, needed for reduction
The inductor size wanted, chip area needed for reduction；Simultaneously because secondary coil loop completely cuts off in DC characteristic with main coil loop,
So the DC power in secondary coil loop is zero, the overall DC power of the voltage-controlled oscillator circuit is reduced, is realized ultralow
The design of power consumption.
2nd, the present invention eliminates the tail current in traditional structure using circuit compared with traditional voltage controlled oscillator topological structure
Source, so as to reduce required bias voltage, this circuit structure is voltage offset electric circuit, and the bias current in circuit is by electricity
Source voltage determines, because the anode from power supply is relatively adapted to relatively low to the transistor for not having cascade ground, this circuit
Worked under supply voltage, so as to realize low power dissipation design；Simultaneously because the NMOS tube for serving as tail current source is eliminated, compared to tradition
The voltage controlled oscillator of structure, reduce due to the introduced phase noise of tail current NMOS tube, so as to reduce phase noise
Source, the topological structure that the present invention is taken have more preferable phase noise performance.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is the circuit diagram of the present invention；
Fig. 2 is traditional inductance capacitance resonant cavity voltage-controlled oscillator circuit figure；
Fig. 3 is the simulation result of the phase noise of the present invention；
Fig. 4 is the simulation result of the tuning range of the present invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1：
As Figure 1-4, the present invention includes a kind of transformer coupled voltage controlled oscillator based on subthreshold value technology, including phase
The core oscillating circuit and output buffer stage circuit to connect, the core oscillating circuit include inductance capacitance resonant tank and born
Resistance produces loop, and main coil differential inductance L1 and secondary inductance L2 is entered by transformer device structure on inductance capacitance resonant tank
Row magnetic coupling, negative resistance produce loop and are made up of the NMOS tube M1 and NMOS tube M2 of cross coupling structure, and negative resistance is produced in loop
NMOS tube M1 drain electrode is connected with main coil inductance L1 in inductance capacitance resonant tank and fixed capacity C1 and contact, NMOS tube M2
Drain electrode and main coil inductance L1 in inductance capacitance resonant tank and fixed capacity C3's and contact be connected.NMOS tube M1 and M2 structures
Into cross coupling structure, there is provided voltage controlled oscillator produces the negative resistance required for vibration.The voltage controlled oscillator, can be applied to car networking
In the design of frequency synthesizer in radio communication chip.
The present invention uses subthreshold value technology, by the size for reducing voltage added on oscillation circuit cross-couplings tube grid
The cross-couplings pipe for vibrating generation is operated in subthreshold region, so as to reduce the electric current required for voltage controlled oscillator work.Together
When reduce the size of voltage controlled oscillator cross-couplings pipe drain voltage, so as in electric current and the aspect control voltage controlled oscillator of voltage two
The power consumption consumed, so as to reach the design of voltage controlled oscillator super low-power consumption.
The topological structure that the present invention is taken forms resonant tank for inductance capacitance, and two pairs of cross-couplings NMOS tubes produce negative
Hinder the voltage controlled oscillator structure as energy compensating network.
Inductance in the present invention shakes the differential inductance in main oscillations loop with secondary using the design of transformer device structure
The individual pen inductance swung in loop is coupled, and compared with two series inductances of traditional structure, improves the quality factor of inductance, can
The obvious phase noise for reducing voltage controlled oscillator；Simultaneously because intercoupling between main coil and secondary coil, required for reduction
Inductor size, chip area needed for reduction.Simultaneously because secondary coil loop completely cuts off in DC characteristic with main coil loop, institute
Using the DC power in secondary coil loop as zero, the overall DC power of the voltage-controlled oscillator circuit is reduced, realizes ultralow work(
The design of consumption.
In topological structure shown in available circuit Fig. 2, the design of tail current source is employed behind cross-couplings pipe pair,
Introduce NMOS tube M3 and provide current offset for cross-couplings pipe, so when supply voltage changes, electricity can be ensured
Bias current in road does not have greatly changed with bias voltage, but tail current source needs higher supply voltage to ensure
All NMOS tubes are operated in saturation region, simultaneously because using NMOS tube as tail current pipe, can introduce extra noise, make
The phase noise performance of circuit deteriorates.Traditional voltage controlled oscillator topological structure shown in the topological structure and Fig. 2 that the present invention takes
Compare, eliminate the tail current source in traditional structure, so as to reduce required bias voltage, realize ultra low voltage confession
Electricity, the design of super low-power consumption.This circuit structure is voltage offset electric circuit, and the bias current in circuit is determined by supply voltage,
Due to the anode from power supply to the transistor for not having cascade ground, this circuit is relatively adapted to work at lower supply voltages
Make, so as to realize low power dissipation design；Simultaneously because eliminating the NMOS tube for serving as tail current source, voltage-controlled compared to traditional structure shakes
Device is swung, is reduced due to the introduced phase noise of tail current NMOS tube, so as to reduce the source of phase noise, institute of the present invention
The topological structure taken has more preferable phase noise performance.
Embodiment 2：
The present embodiment is preferably as follows on the basis of embodiment 1：Inductance capacitance resonant tank includes main coil differential inductance
L1, secondary inductance L2, fixed capacity C1, fixed capacity C2 and difference varactor Cv, the main coil differential inductance
By transformer device structure magnetic coupling occurs for L1 and secondary inductance L2；Main coil differential inductance L1 common tap end and VDD
Power supply positive voltage is connected, the other both ends of main coil differential inductance L1 one end with fixed capacity C1 positive poles and fixed capacity C2 respectively
It is connected, the fixed capacity C1 other end is extremely connected with the one of difference varactor Cv, fixed capacity the C2 other end and difference
The another of varactor Cv is extremely connected, the input Vcont of difference varactor Cv public termination voltage control signal.
Resistance R1, R2 and varactor Cv composition inductance capacitance resonant tanks, cross-couplings pipe form negative resistance oscillation pipe to M1, M2
It is right, the negative resistance required for vibration is produced, to supplement the energy loss of oscillation circuit.Used by this circuit in technique comprising poor
The PN junction varactor of separation structure, compared to the NMOS in other standards CMOS technology or pmos type varactor, have
The characteristics of quality factor are high, it can further optimize the phase noise performance of the design.
Available circuit figure is illustrated in figure 2, this circuit has been completely cut off compared with available circuit using fixed capacity C1, C2 to be led back
Influence of the DC level for difference varactor both ends level in road, make the control electricity being added on difference varactor
Pressure will not be elevated by the interference of DC level.
Inductance in the present invention shakes the differential inductance in main oscillations loop with secondary using the design of transformer device structure
The individual pen inductance swung in loop is coupled, and compared with two series inductances of traditional structure, improves the quality factor of inductance, can
The obvious phase noise for reducing voltage controlled oscillator；Simultaneously because intercoupling between main coil and secondary coil, can reduce institute
The inductor size needed, chip area needed for reduction.Simultaneously because secondary coil loop in DC characteristic with main coil loop every
Absolutely, so the DC power in secondary coil loop is zero, the overall DC power of the voltage-controlled oscillator circuit is reduced, is realized super
The design of low-power consumption.
The NMOS tube M1 drain electrode that negative resistance is produced in loop is connected with NMOS tube M2 grid, NMOS tube M1 grid and
NMOS tube M2 drain electrode is connected, and the source electrode of the source electrode and NMOS tube M2 of the NMOS tube M1 is joined directly together, NMOS tube M1 and NMOS
Pipe M2's and contact be directly grounded.In topological structure shown in Fig. 1, tail current source is employed behind cross-couplings pipe pair
Design, introduce NMOS tube M3 and provide current offset for cross-couplings pipe, so when supply voltage changes, Neng Goubao
Bias current in card circuit does not have greatly changed with bias voltage, but tail current source needs higher supply voltage
Ensure that all NMOS tubes are operated in saturation region, simultaneously because using NMOS tube as tail current pipe, extra make an uproar can be introduced
Sound, deteriorate the phase noise performance of circuit.Traditional voltage controlled oscillator topology shown in the topological structure and Fig. 1 that the present invention takes
Structure is compared, and eliminates the tail current source in traditional structure, and this circuit structure is voltage offset electric circuit, the biased electrical in circuit
Stream is determined that, because the anode from power supply is to the transistor for not having cascade ground, this circuit is relatively adapted to by supply voltage
Worked under relatively low supply voltage, so as to realize low power dissipation design；Simultaneously because eliminate the NMOS tube for serving as tail current source, phase
Than the voltage controlled oscillator of traditional structure, reduce due to the introduced phase noise of tail current NMOS tube, so as to reduce phase
The source of noise, so the topological structure that the present invention is taken has more preferable phase noise performance.
Negative resistance produce part NMOS tube M1 and NMOS tube M2 drain electrode respectively with main line in inductance capacitance resonant tank part
Circle inductance L1 and fixed capacity C1, C2 and contact be connected, negative resistance is produced and is partly connected with inductance capacitance resonant tank part
It is combined as core oscillating circuit.
Exporting buffer stage circuit includes positive phase output buffer stage circuit and minus phase output buffer stage circuit, and positive phase is defeated
The signal input part for going out buffer stage circuit is connected with NMOS tube M2 drain electrode, and minus phase exports the signal output part of buffer stage circuit
Drain electrode with NMOS tube M1 is connected.
Because whole circuit is into differential symmetry structure, positive phase exports buffer stage circuit and minus phase output buffer stage circuit
Topological structure is identical.
Positive phase output buffer stage circuit includes fixed capacity C4, fixed capacity C5, NMOS tube M3, NMOS tube M4, resistance
R3 and resistance R4, fixed capacity C4 one end are connected with NMOS tube M2 drain electrode, and the other end is connected with NMOS tube M3 grid；NMOS
Pipe M3 grid is connected with resistance R3 one end, resistance R3 another termination Vbias power supplys；Gate bias is provided for NMOS tube M3
Voltage.NMOS tube M3 drain electrode is connected with resistance R4 one end, resistance R4 another termination Vbias power supplys；Carried for NMOS tube M3
For drain bias voltage.NMOS tube M3 source electrode is connected with NMOS tube M4 drain electrode, NMOS tube M3 source electrode also with fixed capacity
C5 one end is connected, the positive-phase signal output port V+ of fixed capacity C5 another termination voltage controlled oscillator, forms buffer circuit
Positive-phase signal output channel.
NMOS tube M4 source ground, NMOS tube M4 provide fixed DC current biasing for M3 pipes.Resistance R3 one end with
After one end of the resistance R4 is joined directly together, the positive voltage of Vbias power supplys is connect, resistance R3 and R4, which is played, contains radio frequency letter in circuit
Number leakage effect.C4 plays a part of isolated DC signal.
Minus phase output buffer stage circuit includes fixed capacity C6, fixed capacity C7, NMOS tube M5, NMOS tube M6, resistance
R5 and resistance R6, fixed capacity C6 one end are connected with NMOS tube M1 drain electrode, and the other end is connected with NMOS tube M5 grid；NMOS
Pipe M5 grid is connected with resistance R5 one end, resistance R5 another termination Vbias power supplys；NMOS tube M5 drain electrode and resistance R6
One end be connected, resistance R6 another termination Vbias power supplys；NMOS tube M5 source electrode is connected with NMOS tube M6 drain electrode, NMOS
Pipe M5 source electrode is also connected with fixed capacity C7 one end, and the positive-phase signal of fixed capacity C7 another termination voltage controlled oscillator is defeated
Exit port V-, NMOS tube M6 source ground.
The performance indications such as table 1 below obtained using the circuit：
The performance indications of table 1
Available data under the table data and equal conditions is compared, the operating voltage of the voltage controlled oscillator, power consumption,
Phase noise and frequency range are superior to existing sub- controlled oscillator.
Embodiment 3：
The present embodiment is preferably as follows on the basis of above-described embodiment：Inductance capacitance resonant tank also includes resistance R1 and electricity
Hinder R2, a resistance R1 one end connection difference varactor Cv pole, resistance R1 other ends ground connection, resistance R2 one end connection difference
Varactor Cv another pole, resistance R2 other ends ground connection.It can effectively prevent from producing in major loop using big resistance R1, R2
Oscillator signal to ground.
The circuit is integrated using 0.13 μm of BiCMOS technique of IBM standards.By by the differential inductance in major loop with
Individual pen inductance in subloop is coupled by transformer device structure, while inductance area is reduced, increases LC resonant tanks
Quality factor, come improve the phase noise of voltage controlled oscillator performance.Relatively low supply voltage is used simultaneously, makes voltage controlled oscillator
Oscillation circuit is operated in sub-threshold status, realizes relatively low power consumption.
Secondary inductance L2 is individual pen inductance.
Emulation testing is carried out to the design example of the present invention under 0.13 μm of BiCMOS technique, test result is as follows：
The working power voltage of designed voltage controlled oscillator is only 0.52V in this example, and power consumption is only 334 μ W, remote low
In existing voltage controlled oscillator, ultra low voltage, the design of super low-power consumption are realized.
As shown in figure 3, voltage controlled oscillator designed in this example, when the centre frequency of outputting oscillation signal is 5.9GHz
When, at 1MHz frequency deviations, the phase noise of output signal is -113.9dBc/Hz.With the phase noise phase under existing equal conditions
Than there is the voltage controlled oscillator more preferable phase noise performance to show.
As shown in figure 4, the frequency range of the outputting oscillation signal of voltage controlled oscillator designed in this example is 5.57GHz
~6.23GHz, tuning range 11.1%, there is sufficiently wide tuning range to cover 5.9GHz car networking application band,
During the chip for being more appropriately applied to communicate between automobile designs.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc., all should include
Within protection scope of the present invention.
Claims (10)
- A kind of 1. transformer coupled voltage controlled oscillator based on subthreshold value technology, it is characterised in that the core including interconnection Oscillating circuit and output buffer stage circuit, the core oscillating circuit includes inductance capacitance resonant tank and negative resistance produces loop, Main coil differential inductance L1 and secondary inductance L2 is magnetically coupled by transformer device structure on inductance capacitance resonant tank, is born Resistance produces loop and is made up of the NMOS tube M1 and NMOS tube M2 of cross coupling structure, and negative resistance produces the leakage of the NMOS tube M1 in loop Pole is connected with main coil inductance L1 in inductance capacitance resonant tank and fixed capacity C1 and contact, NMOS tube M2 drain electrode and inductance In capacitor resonance loop main coil inductance L1 and fixed capacity C3's and contact be connected.
- A kind of 2. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 1, it is characterised in that The inductance capacitance resonant tank includes main coil differential inductance L1, secondary inductance L2, fixed capacity C1, fixed capacity C2 Magnetic coupling is occurred by transformer device structure with difference varactor Cv, the main coil differential inductance L1 and secondary inductance L2 Close；Main coil differential inductance L1 common tap end is connected with VDD power supply positive voltages, the other both ends of main coil differential inductance L1 point Positive pole not with fixed capacity C1 positive poles and fixed capacity C2 is connected, fixed capacity the C1 other end and difference varactor Cv One extremely be connected, the fixed capacity C2 other end is extremely connected with the another of difference varactor Cv, difference varactor Cv Public termination voltage control signal input Vcont.
- A kind of 3. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 2, it is characterised in that Also include resistance R1 and resistance R2, a resistance R1 one end connection difference varactor Cv pole, resistance R1 other ends ground connection, electricity Hinder R2 one end connection difference varactor Cv another pole, resistance R2 other ends ground connection.
- 4. a kind of transformer coupled voltage controlled oscillator based on subthreshold value technology according to Claims 2 or 3, its feature exist In, the drain electrode that the negative resistance produces the NMOS tube M1 in loop is connected with NMOS tube M2 grid, NMOS tube M1 grid and NMOS tube M2 drain electrode is connected, and the source electrode of the source electrode and NMOS tube M2 of the NMOS tube M1 is joined directly together, NMOS tube M1 and NMOS Pipe M2's and contact be directly grounded.
- A kind of 5. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 1, it is characterised in that Exporting buffer stage circuit includes positive phase output buffer stage circuit and minus phase output buffer stage circuit, positive phase output buffer stage The signal input part of circuit is connected with NMOS tube M2 drain electrode, and minus phase exports the signal output part and NMOS tube of buffer stage circuit M1 drain electrode is connected.
- A kind of 6. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 5, it is characterised in that It is identical with minus phase output buffer stage circuit topological structure that positive phase exports buffer stage circuit.
- A kind of 7. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 6, it is characterised in that Positive phase output buffer stage circuit includes fixed capacity C4, fixed capacity C5, NMOS tube M3, NMOS tube M4, resistance R3 and resistance R4, fixed capacity C4 one end are connected with NMOS tube M2 drain electrode, and the other end is connected with NMOS tube M3 grid；NMOS tube M3 grid Pole is connected with resistance R3 one end, resistance R3 another termination Vbias power supplys；NMOS tube M3 drain electrode and resistance R4 one end phase Even, resistance R4 another termination Vbias power supplys；NMOS tube M3 source electrode is connected with NMOS tube M4 drain electrode, NMOS tube M3 source Pole is also connected with fixed capacity C5 one end, the positive-phase signal output port V of fixed capacity C5 another termination voltage controlled oscillator +, NMOS tube M4 source ground.
- A kind of 8. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 6, it is characterised in that Minus phase output buffer stage circuit includes fixed capacity C6, fixed capacity C7, NMOS tube M5, NMOS tube M6, resistance R5 and resistance R6, fixed capacity C6 one end are connected with NMOS tube M1 drain electrode, and the other end is connected with NMOS tube M5 grid；NMOS tube M5 grid Pole is connected with resistance R5 one end, resistance R5 another termination Vbias power supplys；NMOS tube M5 drain electrode and resistance R6 one end phase Even, resistance R6 another termination Vbias power supplys；NMOS tube M5 source electrode is connected with NMOS tube M6 drain electrode, NMOS tube M5 source Pole is also connected with fixed capacity C7 one end, the positive-phase signal output port of fixed capacity C7 another termination voltage controlled oscillator V-, NMOS tube M6 source ground.
- A kind of 9. transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 1, it is characterised in that The circuit is integrated using 0.13 μm of BiCMOS technique of IBM standards.
- 10. a kind of transformer coupled voltage controlled oscillator based on subthreshold value technology according to claim 1, its feature exist In secondary inductance L2 is individual pen inductance.
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| CN201710841107.2A CN107592076A (en) | 2017-09-18 | 2017-09-18 | A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology |
| CN201811070229.7A CN109257015A (en) | 2017-09-18 | 2018-09-13 | A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology |
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| CN201710841107.2A CN107592076A (en) | 2017-09-18 | 2017-09-18 | A kind of transformer coupled voltage controlled oscillator based on subthreshold value technology |
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| CN108777565A (en) * | 2018-06-04 | 2018-11-09 | 成都仕芯半导体有限公司 | The voltage controlled oscillator of inductive coupling resonator and its composition |
| CN109286372A (en) * | 2018-09-19 | 2019-01-29 | 电子科技大学 | A kind of high-precision pierce circuit |
| CN109347442A (en) * | 2018-12-14 | 2019-02-15 | 湖南师范大学 | A kind of miniature voltage controlled oscillator based on tunable active inductance |
| CN110098801A (en) * | 2019-06-13 | 2019-08-06 | 珠海微度芯创科技有限责任公司 | Voltage controlled oscillator |
| WO2019218371A1 (en) * | 2018-05-18 | 2019-11-21 | 华为技术有限公司 | Integrated circuit for oscillator |
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| CN110708019A (en) * | 2019-12-13 | 2020-01-17 | 成都铱通科技有限公司 | Compact millimeter wave voltage-controlled oscillator |
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Family Cites Families (3)
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| DE102006017189B4 (en) * | 2006-04-12 | 2010-10-21 | Atmel Automotive Gmbh | Integrated oscillator circuit with at least two resonant circuits |
| US7936224B2 (en) * | 2008-04-22 | 2011-05-03 | Mediatek Inc. | Voltage controlled oscillator |
| CN201869188U (en) * | 2010-12-09 | 2011-06-15 | 电子科技大学 | X-waveband voltage-controlled oscillator |
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2017
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2018
- 2018-09-13 CN CN201811070229.7A patent/CN109257015A/en active Pending
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| CN108777565A (en) * | 2018-06-04 | 2018-11-09 | 成都仕芯半导体有限公司 | The voltage controlled oscillator of inductive coupling resonator and its composition |
| CN108777565B (en) * | 2018-06-04 | 2022-08-09 | 成都仕芯半导体有限公司 | Inductive coupling resonator and voltage-controlled oscillator formed by same |
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| US10833685B1 (en) | 2019-06-19 | 2020-11-10 | International Business Machines Corporation | Linearized wide tuning range oscillator using magnetic balun/transformer |
| CN110661489B (en) * | 2019-09-06 | 2023-03-24 | 电子科技大学 | F23 class voltage controlled oscillator with novel structure |
| CN110661489A (en) * | 2019-09-06 | 2020-01-07 | 电子科技大学 | F23 voltage-controlled oscillator with novel structure |
| CN110708019A (en) * | 2019-12-13 | 2020-01-17 | 成都铱通科技有限公司 | Compact millimeter wave voltage-controlled oscillator |
| CN115102502A (en) * | 2022-07-20 | 2022-09-23 | 香港中文大学（深圳） | Standing wave oscillator and working frequency adjusting method thereof |
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