CN107591443A - Igbt, IPM modules and air conditioner - Google Patents
Igbt, IPM modules and air conditioner Download PDFInfo
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- CN107591443A CN107591443A CN201710872869.9A CN201710872869A CN107591443A CN 107591443 A CN107591443 A CN 107591443A CN 201710872869 A CN201710872869 A CN 201710872869A CN 107591443 A CN107591443 A CN 107591443A
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Abstract
The present invention discloses a kind of igbt, IPM modules and air conditioner, and the igbt includes Semiconductor substrate, active area, collector area and drift region；Active area is arranged at the first surface, and the collector area is arranged at the second surface；The drift region connects the active area and collector area.The emitter region insertion is arranged in the well region, and the trench gate polar region extends to the drift region from the emitter region, and the well region connects the emitter region and the drift region；In this programme, the doping concentration of the collector area is set to be less than or equal to 8*1017/cm‑3, the doping concentration of the emitter region is more than or equal to 5*1019/cm‑3.So that the insulated gate bipolar crystal has good conduction voltage drop and the tradeoff of turn-off time, its combination property is more preferable, and application power is stronger, and the occasion of application is wider.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of igbt, IPM modules and air-conditioning
Device.
Background technology
Igbt (Insulated Gate Bipolar Transistor, abbreviation IGBT) is by bipolar
The compound full-control type voltage driven type power semiconductor device of type triode (BJT) and insulating gate type field effect tube (MOSFET) composition
Part, have the high input impedance of MOSFET element and the low conduction voltage drop two of power transistor (i.e. huge transistor, abbreviation GTR) concurrently
The advantages of aspect, therefore IGBT is widely applied to every field at present.
The Carrier Injection Efficiency and extraction efficiency of the collector area of igbt are largely fixed
The conduction voltage drop and switching characteristic of device.The doping of the Ji Qu generally by increasing igbt is dense in the prior art
Spend to improve Carrier Injection Efficiency, so as to reduce the conduction voltage drop of the igbt, but compared with Gao Ji areas
Doping concentration be unfavorable for device shut-off when carrier extraction speed, cause the turn-off time of device longer.If likewise,
The Ji Qu of igbt doping concentration is reduced, the turn-off time of device can reduce, but conduction voltage drop can increase
Add.
Therefore, researcher always searches for how designing IGBT device, with obtain more preferable conduction voltage drop and shut-off when
Between tradeoff, design low conduction voltage drop, the IGBT of short turn-off time.
The content of the invention
The main object of the present invention is to propose a kind of insulation for having good conduction voltage drop and the tradeoff of turn-off time
Grid bipolar transistor.
To achieve the above object, a kind of igbt proposed by the present invention, including:
Semiconductor substrate, the Semiconductor substrate are sequentially formed with collector area, drift region and active along its thickness direction
Area；The active area includes trench gate polar region, well region and emitter region, and the emitter region insertion is arranged on the well region
In, the trench gate polar region extends to the drift region from the emitter region, and the well region connects the emitter region and institute
State drift region；
The doping concentration of the collector area is less than or equal to 8*1017/cm-3, the doping concentration of the emitter region is more than
Or equal to 5*1019/cm-3。
Preferably, the doping concentration of the well region is less than or equal to 4*1016/cm-3。
Preferably, the doping concentration of the drift region is 1*1014/cm-3~6*1014/cm-3。
Preferably, the thickness of the collector area is 0.4um~1.0um.
Preferably, the thickness of the well region is 1.0um~2.5um.
Preferably, the difference of the thickness of the thickness of the well region and the emitter region is 1um~2um.
Preferably, the doping type of the emitter region is n-type doping, and the doping type of the collector area is mixed for p-type
Miscellaneous, the doping type of the well region adulterates for p-type.
Preferably, the colelctor electrode includes the first doped region and the second doped region；First doped region is mixed
Miscellaneous concentration is higher than the doping concentration of the second doped region.
Preferably, first doped region has multiple, and second doped region also have it is multiple；
First doped region and the second doped region setting alternating with each other.
The present invention also proposes a kind of IPM modules, and the IPM modules include above-mentioned igbt.
The present invention also proposes a kind of air conditioner, and the air conditioner includes described igbt, and/or including
Described IPM modules.
Discovery of the technical solution of the present invention based on research staff when making the igbt：Work as emitter stage
The doping concentration in area and the doping concentration of collector area can cause igbt to have preferably in different values
Conduction voltage drop has the preferably short turn-off time.And related experiment is further done；In experimentation, on the one hand increase
The injection efficiency of emitter region electronics, on the other hand reduces the hole injection efficiency of collector area, finally surveys in an experiment
The doping concentration of the emitter region of proper igbt is more than or equal to 5*1019/cm-3, and the collector area
Doping concentration is less than or equal to 8*1017/cm-3When, the igbt had between conduction voltage drop and turn-off time
Preferable tradeoff, the combination property of this igbt is more preferable, and application power is stronger, and the occasion of application
It is wider.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Structure according to these accompanying drawings obtains other accompanying drawings.
Fig. 1 is the structural representation of an exemplary crystal pipe unit of igbt of the present invention.
Drawing reference numeral explanation：
| Label | Title | Label | Title |
| 10 | Active area | 13 | Trench gate polar region |
| 11 | Well region | 20 | Drift region |
| 12 | Emitter region | 30 | Collector area |
The realization, functional characteristics and advantage of the object of the invention will be described further referring to the drawings in conjunction with the embodiments.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
If it is to be appreciated that related in the embodiment of the present invention directionality instruction (such as up, down, left, right, before and after ...),
Then directionality instruction be only used for explaining relative position relation under a certain particular pose (as shown in drawings) between each part,
Motion conditions etc., if the particular pose changes, directionality instruction also correspondingly changes therewith.
If in addition, relating to the description of " first ", " second " etc. in the embodiment of the present invention, " first ", " second " etc. are somebody's turn to do
Description be only used for describing purpose, and it is not intended that instruction or implying its relative importance or implicit indicating indicated skill
The quantity of art feature.Thus, " first " is defined, the feature of " second " can be expressed or implicitly includes at least one spy
Sign.In addition, the technical scheme between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
Based on enough realizations, the knot of this technical scheme is will be understood that when the combination appearance of technical scheme is conflicting or can not realize
Conjunction is not present, also not within the protection domain of application claims.
The present invention proposes a kind of igbt, and Fig. 1 shows the vertical N-channel of the igbt
One exemplary crystal pipe unit.Igbt includes Semiconductor substrate, active area 10, collector area 30 and drift
Move area 20；The collector area 30, drift region 20 and active area 10 are successively along the thickness direction of the Semiconductor substrate；Described half
Conductor substrate has first surface and second surface；Active area 10 is arranged at the first surface, and the collector area 30 is set
Put at the second surface；The drift region 20 is arranged between the active area 10 and collector area 30, and described in connection
Active area 10 and collector area 30.
The active area 10 includes trench gate polar region 13, well region 11 and emitter region 12；Wherein, the emitter region 12
Insertion is arranged in the well region 11, and the trench gate polar region 13 extends to the drift region 20, institute from the emitter region 12
State well region 11 and connect the emitter region 12 and the drift region 20；In order that the insulated gate bipolar crystal has good lead
Logical pressure drop and the tradeoff of turn-off time, therefore, in this programme, set the doping concentration of the collector area 30 to be less than or wait
In 8*1017/cm-3, the doping concentration of the emitter region 12 is more than or equal to 5*1019/cm-3。
When the igbt is in forward conduction, it is necessary to grid voltage VGE>Vth(threshold voltage), collection
Voltage V between electrode district 30 and emitter region 12CE>0.When igbt is in the conduction state, insulated gate bipolar
The grid of the MOS structure of transistor is opened, and electronics flows out from emitter region 12, flows into the drift region 20, electronic current is exhausted
The triode of edge grid bipolar transistor provides base current, while collector area 30 also can be in the presence of forward voltage to drift
Hole is injected in area 20, with the increase of conducting electric current, the injected electrons concentration of drift region 20 increase, in order to maintain drift region 20
Electroneutral, the hole of drift region 20 is injected into by collector area 30 can also increase, thus the drift of script high resistant
Substantial amounts of electron hole conducting carriers are have accumulated in area 20, so as to produce conductivity modulation effect；Imitated according to the conductance modulation
The result answered, forward conduction voltage drop when being worked so as to determine that the igbt is positive.
When igbt turns off, grid voltage is by the occasion of dropping to zero or negative value, therefore by emitter region
12 paths that electronics is injected to drift region 20 are cut off, and igbt electronic current is gradually reduced；Insulated gate bipolar
Transistor stores substantial amounts of both hole and electron in forward conduction, thus in igbt turn off process, it is necessary to
These superfluous carriers are extracted, and when the injected holes concentration of drift region 20 is excessive, it can make it that insulated gate bipolar is brilliant
Body pipe tail currents existence time in turn off process is longer, and this tail currents extends the shut-off of igbt
Time, the switching frequency for reducing igbt, increase the switching loss of device.
In igbt forward conduction, carrier concentration is very high in the region close to collector area 30, and
It is very low in the concentration close to emitter region 12.Igbt is stored in turn off process near emitter region 12
Carrier can be quickly be extracted, therefore it is exhausted can to reach reduction by suitably increasing the carrier concentration of emitter region 12
While edge grid bipolar transistor forward voltage drop, the purpose of the turn-off time of igbt will not be extended；The opposing party
Face, in order to reduce the turn-off time of igbt, collection can be reduced by reducing the doping concentration of collector area 30
Electrode district 30 injects the concentration in hole to drift region 20.This programme research staff sends out when making the igbt
Now, when the doping concentration of emitter region 12 and the doping concentration of collector area 30 are in different values, insulated gate bipolar can be caused
Transistor is with preferably conduction voltage drop or with the preferably short turn-off time.Therefore the discovery, this programme research and development people are based on
Member has further done related experiment, to test the doping concentration of the doping concentration of emitter region 12 and collector area 30 respectively at what
During kind of section, the conduction voltage drop of the igbt and there is good tradeoff between the turn-off time；Finally
Show that the doping concentration of the emitter region 12 is more than or equal to 5*1019/cm-3, the doping concentration of the collector area 30 is set
Less than or equal to 8*1017/cm-3When, the conduction voltage drop of the igbt and have between the turn-off time good
Tradeoff.Experimentation is as follows：
In the first embodiment, the doping concentration of emitter region 12 described in igbt is equal to 5*1019/cm-3, the doping concentration of the well region 11 is equal to 4*1016/cm-3, the doping concentration that the collector area 30 is gone is equal to 8*1017/cm-3, the doping concentration of the drift region 20 is 1.5*1014/cm-3.The length of the trench gate polar region 13 is 6um, the grid
Width is 1.7um, and the spacing between neighboring gates is 5.8um.The thickness of the emitter region 1213 is 1um, p-well wells 12
Thickness be 2um, the thickness of drift region 202 is 70um, and the thickness of collector area 30 is 0.5um.
After tested, when in collector area 30, electric current is 20A, its conduction voltage drop is the igbt of the present embodiment
2.0V；In addition, the turn-off time of the igbt is 760ns.As can be seen here, its have good conduction voltage drop and
The tradeoff of turn-off time.It is with reference to the insulated gate herein it should be noted that collector current is set as 20A here
What the rated current of bipolar transistor was set, i.e., it is measured when rated current of the collector current close to its own
Data are more representative, compared with the genuine property that can react the igbt.
In the first comparative example, the doping concentration of collector area 30 of its igbt is 4*1018/cm-3, its
Remaining parameter is identical with the parameter in first embodiment.After tested, when the electric current of collector area 30 is 20A, the insulated gate bipolar is brilliant
The conduction voltage drop of body pipe is 1.96V；But the turn-off time of the igbt is 1640ns；Therefore the insulated gate
The turn-off time of bipolar transistor is more than twice of the turn-off time of igbt in first embodiment；Therefore,
In one comparative example, the conduction voltage drop of igbt and the tradeoff of turn-off time are poor, in conduction voltage drop substantially not
In the case of change, ON time greatly increases.
In the second comparative example, the doping concentration of the emitter region 12 of its igbt is 2.5*1019/cm-3, remaining parameter is identical with the parameter in first embodiment；After tested, when the electric current of collector area 30 is 20A, the insulated gate is double
The conduction voltage drop of gated transistors is 2.1V；In addition, the turn-off time of this igbt is 780ns.As can be seen here,
The insulated gate that igbt conduction voltage drop and turn-off time in two comparative examples are inferior in first embodiment is double
Gated transistors conduction voltage drop and turn-off time.
As can be seen here, the doping concentration design of the emitter region 12 of igbt of the present invention, collector area 30,
Good conduction voltage drop and the tradeoff of turn-off time can be obtained so that the conduction voltage drop of igbt and shut-off
Time is relatively low.
The course of work of the technical solution of the present invention based on igbt, in experimentation, on the one hand increase
The injection efficiency of the electronics of emitter region 12, on the other hand reduces the hole injection efficiency of collector area 30, is finally testing
In measure when the doping concentration of the emitter region 12 of igbt is more than or equal to 5*1019/cm-3, and the current collection
The doping concentration of polar region 30 is less than or equal to 8*1017/cm-3When, the igbt has conduction voltage drop and shut-off
Preferable tradeoff between time, the combination property of this igbt is more preferable, and application power is stronger, Yi Jiying
Occasion is wider.
Based on above-described embodiment, in this programme, the doping concentration of the well region 11 is set to be less than or equal to 4*1016/cm-3.
In 3rd comparative example, the doping concentration of well region 11 is 5*1016/cm-3, remaining parameter is identical with the parameter in first embodiment；Through
Test, when in collector area 30, electric current is 20A, the conduction voltage drop of the igbt is 3.1V；In addition, this insulated gate
The turn-off time of bipolar transistor is 840ns.As can be seen here, the igbt conduction voltage drop in the 3rd comparative example with
And the turn-off time is inferior to igbt conduction voltage drop and the turn-off time in first embodiment, conduction voltage drop and
Tradeoff between turn-off time is poor.
Further, in order to optimize the conduction voltage drop of the igbt and turn-off time, the collection is set
The doping concentration of electrode district 30 is uneven, and the doping concentration of said collector area 30 is uneven to be referred to, in the colelctor electrode
In area 30, its doping concentration is not all of equal.The collector area 30 can be divided into left and right two parts, the left side and the right area
The doping concentration in domain；Can also be that the collector area 30 is divided for multiple regions, the doping concentration in each region not phase
Deng can also be that the collector area 30 has a N kinds doping concentration (N is at least 2) altogether, and this N kinds doping concentration is uniformly or not
Be uniformly distributed in colelctor electrode, etc..Based on above-described embodiment, the average doping concentration of the collector area 30 is 8*1017/
cm-3。
The making of the igbt for convenience, in this programme, the collector area 30 is set to include the
One doped region and the second doped region；The doping concentration of first doped region is dense higher than the doping of the second doped region
Degree.In conducting, electric current flows through igbt from the doped region of collector area 30 first and the second doped region, collection
First doped region of electrode district 30 can improve the efficiency of the hole of collector area 30 injection so that the hole in injection drift region 20
Increase, and then strengthen conductivity modulation effect, reduce the conduction voltage drop of igbt；Closed in igbt
When disconnected, for the first doped region of collector area 30 due to doping concentration height, lattice damage is more serious, thus substantial amounts of electricity be present
Son-hole recombination centers, this can increase the speed of the electronics of drift region 20 and hole-recombination, and then reduce igbt
Turn-off time, therefore, set the doping concentration of the collector area 30 is uneven more while the insulated gate can be reduced
The conduction voltage drop of bipolar transistor and turn-off time.
It should be noted that the area ratio of the first doped region of collector area 30 and the second doped region in this programme
Example, doping concentration size are adjustable, further to optimize the conduction voltage drop of igbt and turn-off time.In order to
Make the hole concentration from the collector area 30 injection drift region 20 more uniform, set first doped region to have multiple,
And second doped region also have it is multiple；First doped region and the second doped region setting alternating with each other.Preferably,
Set the area of suitable, multiple second doped region of the area of multiple first doped regions suitable, in order in life
During production, the overall doping concentration of the collector area 30 is controlled exactly.
The program is by improving the doping way of the collector area 30, so that the doping concentration of the collector area 30 is not
Uniformly.The collector area 30 at least has higher doping concentration region and relatively low doping concentration region, insulated gate pair
For gated transistors in conducting, the first doped region can improve the efficiency of the hole of collector area 30 injection so that injection drift region
Hole in 20 is increased, and reduces the conduction voltage drop of igbt；When igbt turns off, due to
The lattice damage of one doped region is more serious, thus substantial amounts of electron-hole complex centre be present, and this can increase the electricity of drift region 20
Son and the speed of hole-recombination, and then reduce the turn-off time of igbt；Simultaneously because low doped region is deposited
So that the overall doping concentration of collector area 30 will not be very high, so as to will not cause because colelctor electrode doping concentration is high and caused by
The situation that the igbt turn-off time extends.Therefore the program can reduce the igbt simultaneously
Conduction voltage drop and the turn-off time, optimize the performance of the igbt.
Igbt relies primarily on the drift region 20 to undertake forward blocking voltage in forward blocking,
The resistivity and thickness of the drift region 20 are bigger, and the forward blocking voltage of device is higher, but also increases the forward direction of device
Pressure drop, pressure-resistant and forward voltage drop influence of the igbt drift region 20 to device is contradiction, it is therefore desirable to is rolled over
Middle consideration.When igbt forward conduction, in order that resistivity is special to igbt forward conduction
The influence of property is smaller, sets the doping concentration 1*10 of the drift region 2014/cm-3~6*1014/cm-3；Preferably, the drift
The doping concentration in area 20 is preferably 1.5*1014/cm-3.Because when the carrier concentration of injection drift region 20 is much larger than it
During the doping concentration of body, due to the conductance modulation positive effect inside igbt so that insulated gate bipolar transistor
Pressure-resistant and forward voltage drop influence of the pipe drift region 20 to device is more compromised.On the other hand, compared with the drift region of low doping concentration
20 can be under the more thickness of thin drift region 20, and voltage endurance capability keeps conducting that is constant, and then reducing igbt
Pressure drop.
The thickness of the collector area 30 is 0.4um~1.0um, it is preferable that the thickness of the collector area 30 is
0.5um.The relatively thin thickness of collector area 30, carrier can be accelerated to flow out drift region 20, and then shorten igbt
Turn-off time.
Based on above-described embodiment, in this programme, set the thickness of the well region 11 and the emitter region 12 thickness it
Difference is 1um~2um.Preferably, the thickness of the well region 11 is 2um.The resistance to pressure energy of igbt can so be ensured
Under the premise of power is sufficiently high, effectively shorten channel length, so as to reduce conduction voltage drop.
In this programme, the doping type of the emitter region 12 is n-type doping, and the doping type of the collector area 30 is
P-type is adulterated, and the doping type of the well region 11 adulterates for p-type.
The present invention also proposes a kind of IPM modules, and the IPM modules include described igbt, the insulated gate
The concrete structure of bipolar transistor is with reference to above-described embodiment, because IPM modules employ whole technologies of above-mentioned all embodiments
Scheme, therefore all beneficial effects at least caused by the technical scheme with above-described embodiment, this is no longer going to repeat them.This
Art personnel can also be wrapped it is understood that the IPM modules can include 4 igbts
Include 6 igbts, the connecting tube relation between the igbt will not be repeated here.
The present invention also proposes a kind of air conditioner, and the air conditioner includes described igbt, and/or described
IPM modules.The igbt and/or the IPM modules can be used for the main circuit or control electricity of air conditioner
Lu Shang, it is not specifically limited herein.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every at this
Under the inventive concept of invention, the equivalent structure transformation made using description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in the scope of patent protection of the present invention.
Claims (10)
- A kind of 1. igbt, it is characterised in that including:Semiconductor substrate, the Semiconductor substrate are sequentially formed with collector area, drift region and active area along its thickness direction；Institute Stating active area includes trench gate polar region, well region and emitter region, and the emitter region insertion is arranged in the well region, described Trench gate polar region extends to the drift region from the emitter region, and the well region connects the emitter region and the drift Area；The doping concentration of the collector area is less than or equal to 8*1017/cm-3, the doping concentration of the emitter region is more than or waits In 5*1019/cm-3。
- 2. igbt according to claim 1, it is characterised in that the doping concentration of the well region be less than or Equal to 4*1016/cm-3。
- 3. igbt according to claim 1 or 2, it is characterised in that the doping concentration of the drift region For 1*1014/cm-3~6*1014/cm-3。
- 4. igbt according to claim 1, it is characterised in that the thickness of the collector area is 0.4um~1.0um.
- 5. igbt according to claim 1, it is characterised in that the thickness of the well region be 1.0um~ 2.5um。
- 6. igbt according to claim 1, it is characterised in that the thickness of the well region and the transmitting The difference of the thickness of polar region is 1um~2um.
- 7. igbt according to claim 1, it is characterised in that the doping type of the emitter region is N-type doping, the doping type of the collector area adulterate for p-type, and the doping type of the well region adulterates for p-type.
- 8. igbt according to claim 1, it is characterised in that the colelctor electrode includes the first doped region Domain and the second doped region；The doping concentration of first doped region is higher than the doping concentration of the second doped region.
- 9. a kind of IPM modules, it is characterised in that including the insulated gate bipolar transistor as described in claim 1 to 8 any one Pipe.
- 10. a kind of air conditioner, it is characterised in that the air conditioner includes the insulated gate as described in claim 1 to 8 any one Bipolar transistor, and/or including IPM modules as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710872869.9A CN107591443A (en) | 2017-09-22 | 2017-09-22 | Igbt, IPM modules and air conditioner |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710872869.9A CN107591443A (en) | 2017-09-22 | 2017-09-22 | Igbt, IPM modules and air conditioner |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157683A (en) * | 2014-08-21 | 2014-11-19 | 株洲南车时代电气股份有限公司 | Igbt chip and preparation method thereof |
| CN105023943A (en) * | 2015-08-10 | 2015-11-04 | 电子科技大学 | Longitudinal RC-IGBT device |
| CN105514148A (en) * | 2015-10-22 | 2016-04-20 | 温州墨熵微电子有限公司 | Insulated gate bipolar transistor |
| US20170222029A1 (en) * | 2016-01-29 | 2017-08-03 | Denso Corporation | Semiconductor device |
-
2017
- 2017-09-22 CN CN201710872869.9A patent/CN107591443A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157683A (en) * | 2014-08-21 | 2014-11-19 | 株洲南车时代电气股份有限公司 | Igbt chip and preparation method thereof |
| CN105023943A (en) * | 2015-08-10 | 2015-11-04 | 电子科技大学 | Longitudinal RC-IGBT device |
| CN105514148A (en) * | 2015-10-22 | 2016-04-20 | 温州墨熵微电子有限公司 | Insulated gate bipolar transistor |
| US20170222029A1 (en) * | 2016-01-29 | 2017-08-03 | Denso Corporation | Semiconductor device |
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