CN107565942A - A kind of protection circuit for MOSFET - Google Patents
A kind of protection circuit for MOSFET Download PDFInfo
- Publication number
- CN107565942A CN107565942A CN201710970367.XA CN201710970367A CN107565942A CN 107565942 A CN107565942 A CN 107565942A CN 201710970367 A CN201710970367 A CN 201710970367A CN 107565942 A CN107565942 A CN 107565942A
- Authority
- CN
- China
- Prior art keywords
- mosfet
- voltage
- circuit
- poles
- regulator diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004224 protection Effects 0.000 title claims abstract description 43
- 230000000295 complement effect Effects 0.000 claims abstract description 29
- 230000006698 induction Effects 0.000 claims abstract description 26
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 17
- 230000033228 biological regulation Effects 0.000 claims description 13
- 230000033001 locomotion Effects 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 7
- 230000001934 delay Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
This application discloses a kind of protection circuit for MOSFET, including mu balanced circuit S1, delay circuit S2 and complementary energy circuit S3, wherein mu balanced circuit S1 includes voltage-regulator diode D1.Voltage-regulator diode D1 negative pole connection MOSFET Q3 D poles, voltage-regulator diode D1 positive pole difference connection delay circuit S2 and complementary energy circuit S3；Delay circuit S2 other end connection MOSFET Q2 G poles, complementary energy circuit S3 other end connection MOSFET Q3 G poles.The protection circuit of the application reduces reverse induction voltage caused by stray inductance L, and then reduce the risk that MOSFET Q3 bear overvoltage by slowing down MOSFET Q3 switching speed.
Description
Technical field
The application is related to MOSFET protections field, more particularly to a kind of protection circuit for MOSFET.
Background technology
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide
Semiconductor field effect transistor) it is a kind of field-effect transistor, it has been widely used do current amplifier or switch controller at present.
For example, amplifier is the device that can be amplified current capability using MOSFET and realized.
Fig. 1 is a kind of circuit diagram of switching amplifier, as shown in figure 1, multiple MOSFET are included in switching amplifier, its
In, MOSFET Q3 are used to amplify electric current；MOSFET Q1 and MOSFET Q2 composition push-pull type switches, for controlling MOSFET Q3
Be turned on and off.The use process of the switching amplifier includes：When drive signal MOS Driver are low-voltage, MOSFET
Q1 is turned on, so that MOSFET Q3 are opened；When drive signal MOS Driver are high voltage, MOSFET Q2 conductings, so as to
Close MOSFET Q3.
In use, during quick closedown MOSFET Q3, stray inductance L in circuit will produce one it is larger anti-
To induced voltage, the reverse induction voltage is with supply voltage collective effect in MOSFET Q3 D poles and the both ends of S poles.When
MOSFET Q3 D poles and the voltage V at S poles both endsDSThe maximum withstanding voltage between D poles and S poles not less than MOSFET Q3, then
MOSFET Q3 are by normal work.If the voltage V of MOSFET Q3 D poles and S poles both endsDSD poles and S poles more than MOSFET Q3
Between maximum withstanding voltage, then MOSFET Q3 will be damaged by overvoltage.Short circuit or overcurrent particularly occur in circuit
In the case of, quick closedown MOSFET Q3, MOSFET Q3 will be damaged because by overvoltage.
The content of the invention
This application provides a kind of MOSFET protection circuit, during for solving quick closedown MOSFET Q3, in circuit
Parasitic induced voltage is excessive caused by stray inductance L, the problem of so as to cause MOSFET easily to be damaged by overvoltage.
A kind of protection circuit for MOSFET, the circuit include the mu balanced circuit S1 and delay circuit S2 of series connection, its
Described in mu balanced circuit S1 including voltage-regulator diode D1, voltage-regulator diode D1 negative pole be used for the D for connecting MOSFET Q3
Pole, the positive pole of the voltage-regulator diode D1 connect one end of the delay circuit S2；
The other end connection MOSFET Q2 of delay circuit S2 G poles, when closing MOSFET Q3, if MOSFET
Voltage V between Q3 D poles and S polesDSMore than the voltage of voltage regulation of the voltage-regulator diode D1, then the voltage-regulator diode D1 is led
It is logical, drive the delay circuit S2 to turn on, make the voltage of MOSFET Q2 G poles reduce, so that MOSFET Q2 delays pair
MOSFET Q1 closing motion.
Preferably, resistance R1 and triode Q4, the resistance R1 that the delay circuit S2 includes series connection one end connect
The positive pole of the voltage-regulator diode D1, the other end of the resistance R1 connect the b poles of the triode Q4；
The c poles of the triode Q4 are used for the G poles for connecting MOSFET Q2, the e poles ground connection of the triode Q4.
Preferably, the protection circuit also one end including complementary energy circuit S3, the complementary energy circuit S3 connects the voltage stabilizing
Diode D1 positive pole, the other end of the complementary energy circuit S3 are used for the G poles for connecting MOSFET Q3,
When closing MOSFET Q3, if the voltage V between MOSFET Q3 D poles and S polesDSMore than the voltage-regulator diode
D1 voltage of voltage regulation, then the voltage-regulator diode D1 conductings, drive the complementary energy circuit S3 to turn on, make MOSFET Q3 G poles
Voltage improves, so that MOSFET Q3 closing motion delay.
Preferably, the complementary energy circuit S3 includes the diode D2 and resistance R2 of series connection,
The positive pole of the diode D2 connects the positive pole of the voltage-regulator diode D1, the negative pole connection institute of the diode D2
Resistance R2 one end is stated,
The other end connection MOSFET Q3 of resistance R2 G poles.
Preferably, the protection circuit also includes energy-absorbing circuit S4, the energy-absorbing circuit S4 for being connected in parallel on MOSFET Q3
D poles and S poles both ends, the energy-absorbing circuit S4 is used to absorb reverse induction electric energy caused by stray inductance L.
Preferably, the energy-absorbing circuit S4 is connected in parallel on MOSFET Q3 D poles and S poles including electric capacity a C, the electric capacity C
Both ends.
From above technical scheme, the embodiment of the present application provide a kind of MOSFET protection circuit, for
MOSFET carry out express close operation when, it is ensured that MOSFET from overvoltage infringement, particularly suitable in circuit occur open circuit or
The situation of overcurrent.Stray inductance L reverse induction voltage and the MOSFET Q3 proportional pass of switching speed are utilized in the application
System, i.e. the switching speed of MOSFET Q3 is faster, then reverse induction voltage caused by stray inductance L is higher；MOSFET Q3's opens
Pass speed is slower, then reverse induction voltage caused by stray inductance L is lower, sets and protects on MOSFET to be protected connection circuit
Protection circuit, the protection circuit can delay MOSFET switching speed, so as to reduce reverse induction voltage caused by stray inductance L,
And then reduce the risk that overvoltage infringement occurs for MOSFET.
The protection circuit of the application specifically includes mu balanced circuit S1, delay circuit S2 and complementary energy circuit S3 including circuit, its
Middle mu balanced circuit S1 includes voltage-regulator diode D1.Voltage-regulator diode D1 negative pole connection MOSFET Q3 D poles, voltage-regulator diode
D1 positive pole difference connection delay circuit S2 and complementary energy circuit S3, delay circuit the S2 other end connection MOSFET Q2 G poles,
Complementary energy circuit S3 other end connection MOSFET Q3 G poles.
In actual use, when the initial time for closing MOSFET Q3, if between MOSFET Q3 D poles and S poles
Voltage VDSMore than voltage-regulator diode D1 voltage of voltage regulation, then voltage-regulator diode D1 is turned on, and then makes to connect with voltage-regulator diode D1
The delay circuit S2 connect is both turned on complementary energy circuit S3.Delay circuit S2 is turned on, and makes the voltage of MOSFET Q2 G poles reduce, from
And postpone MOSFET Q2 to MOSFET Q3 closing motions.Complementary energy circuit S3 turn on, make MOSFET Q3 G poles in the short time
Still in conducting state, so as to postpone MOSFET Q3 closing motion.Postpone MOSFET Q3 closing motion, you can slow down
MOSFET Q3 switching speed, so as to reduce reverse induction voltage caused by stray inductance L, and then reduce MOSFET Q3
Bear the risk of overvoltage.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, letter will be made to the required accompanying drawing used in embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of circuit diagram of switching amplifier；
Fig. 2 is circuit diagram of the application for MOSFET protection circuit；
Fig. 3 is voltage oscillogram when being not provided with protection circuit；
Fig. 4 is voltage oscillogram when setting protection circuit.
Embodiment
In switching amplifier as shown in Figure 1, MOSFET Q1 and MOSFET Q2 composition push-pull type switches, for controlling
MOSFET Q3's is turned on and off.To pursue the performance of switching amplifier, in current switching amplifier, MOSFET Q3 make more
With powerful device, powerful MOSFET Q3 have higher switching frequency, can be achieved quickly to open or close.But
When powerful MOSFET Q3 work, stray inductance L present in loop will be produced bright in MOSFET Q3 high-speed switches
Aobvious reverse induction voltage, particularly switching amplifier occur excessively stream, it is short-circuit when, caused by stray inductance L reverse induction electricity
Pressure can be higher.The reverse induction voltage and supply voltage collective effect are on MOSFET Q3, once carried on MOSFET Q1
Voltage exceeds MOSFET Q1 maximum withstanding voltage, and the overvoltage for causing MOSFET Q3 is damaged.This application provides one kind
MOSFET protection circuit, during for solving quick closedown MOSFET Q3, parasitic sensing caused by the stray inductance L in circuit
Voltage is excessive, the problem of so as to cause MOSFET easily to be damaged by overvoltage.
The operation principle that protection circuit in the application uses is：Stray inductance L reverse induction voltage and MOSFET Q3
The proportional relation of switching speed, its relational expression is V=L × di/dt, wherein, V be stray inductance L reverse induction voltage, L
For stray inductance L induction reactance, di/dt is stray inductance L current changing rate, stray inductance L current changing rate and MOSFET
Q1 switching speed direct ratio, therefore MOSFET Q1 switching speed is characterized in the application with current changing rate.Pass through the relational expression
Understand, MOSFET Q3 switching speed is faster, then reverse induction voltage caused by stray inductance L is higher；MOSFET Q3's opens
Pass speed is slower, then reverse induction voltage caused by stray inductance L is lower.Therefore, the protection circuit of the application is by delaying
MOSFET switching speed, reverse induction voltage caused by reduction stray inductance L, overvoltage is born so as to reduce MOSFET Q3
Risk, and then realize to MOSFET Q3 overvoltage protection.
Fig. 2 is circuit diagram of the application for MOSFET protection circuit, as shown in Fig. 2 the protection circuit includes series connection
Mu balanced circuit S1 and delay circuit S2, wherein mu balanced circuit S1 includes voltage-regulator diode D1, voltage-regulator diode D1 negative pole use
In connection MOSFET Q3 D poles, voltage-regulator diode D1 positive pole connection delay circuit S2 one end；Delay circuit S2's is another
End connection MOSFET Q2 G poles.
The intrinsic voltage of voltage regulation of voltage-regulator diode D1, when the voltage at voltage-regulator diode D1 both ends is more than the voltage of voltage regulation
When, voltage-regulator diode D1 is by reverse-conducting.Those skilled in the art can be according to supply voltage and MOSFET Q3 maximum tolerance electricity
Pressure, corresponding voltage-regulator diode of the selection with suitable voltage of voltage regulation.
When specifically used, when drive signal MOS Driver step-downs, MOSFET Q2 conductings, so as to control MOSFET
Q3 carries out closing motion.MOSFET Q3 initial time is being closed, if the voltage V between MOSFET Q3 D poles and S polesDSIt is super
Voltage-regulator diode D1 voltage of voltage regulation is crossed, then voltage-regulator diode D1 is turned on, and then drives delay circuit S2 conductings, delay circuit S2
The voltage of MOSFET Q2 G poles is reduced, so that closing motion of the MOSFET Q2 delays to MOSFET Q1.Postpone MOSFET
Q3 closing motion is advantageous to slow down MOSFET Q3 switching speed, so as to reduce reverse induction electricity caused by stray inductance L
Pressure, and then reduce the risk that MOSFET Q3 bear overvoltage.
In the present embodiment, delay circuit S2 includes the resistance R1 and triode Q4 of series connection, resistance R1 one end connection voltage stabilizing
Diode D1 positive pole, resistance R1 other end connecting triode Q4 b poles；Triode Q4 c poles are used to connect MOSFET Q2
G poles, triode Q4 e poles ground connection.Wherein, triode Q4 in its conducting state, can reduce MOSFET Q2 voltage, from
And slow down MOSFET Q3 shutdown rate.
When specifically used, MOSFET Q3 initial time is being closed, if the electricity between MOSFET Q3 D poles and S poles
Press VDSMore than voltage-regulator diode D1 voltage of voltage regulation, then voltage-regulator diode D1 is turned on, and triode Q4 is turned on therewith, triode
The G pole tensions for causing MOSFET Q2 are reduced after Q4 conductings, make MOSFET Q2 turn on delay, and then make MOSFET Q3 pass
Close rate reduction.It can be seen from formula V=L × di/dt, stray inductance L generations can be reduced by reducing MOSFET Q3 shutdown rate
Reverse induction voltage, so as to reduce the risk that MOSFET Q3 bear overvoltage.
The protection circuit of the application also includes complementary energy circuit S3, and complementary energy circuit S3 one end connection voltage-regulator diode D1 is just
Pole, the complementary energy circuit S3 other end are used for the G poles for connecting MOSFET Q3.MOSFET Q3 initial time is being closed, if
Voltage V between MOSFET Q3 D poles and S polesDSDuring voltage of voltage regulation more than voltage-regulator diode D1, then voltage-regulator diode D1 is led
It is logical, and then drive complementary energy circuit S3 conductings.Complementary energy circuit S3 after conducting will transmit electric energy to MOSFET Q3 in a short time,
So that MOSFET Q3 G pole tensions are improved in a short time, so as to reach delay MOSFET Q3 closing motion, subtract
The purpose of slow MOSFET Q3 shutdown rate.
In the present embodiment, complementary energy circuit S3 includes the diode D2 and resistance R2 of series connection, wherein, diode D2 positive pole connects
Meet voltage-regulator diode D1 positive pole, diode D2 negative pole connection resistance R2 one end, resistance R2 other end connection MOSFET
Q3 G poles.
When specifically used, MOSFET Q3 initial time is being closed, if the electricity between MOSFET Q3 D poles and S poles
Press VDSMore than voltage-regulator diode D1 voltage of voltage regulation, then voltage-regulator diode D1 conductings, diode D2 conductings are driven therewith.Diode
Electric current in D2 reaches MOSFET Q3 G poles by resistance R2, MOSFET Q3 is tended to remain in a short time, so as to
Reach the purpose for postponing MOSFET Q3 closing motion, slowing down MOSFET Q3 shutdown rate.
The protection circuit of the application also includes both ends of the D poles with S poles that energy-absorbing circuit S4 is used to be connected in parallel on MOSFET Q3,
Energy-absorbing circuit S4 is used to absorb the reverse induction electric energy that stray inductance L is applied on MOSFET Q3, so as to avoid reverse induction electric
Pressure is all applied on MOSFET Q3, causes the phenomenon that MOSFET Q3 are damaged by overvoltage to occur.
In the present embodiment, energy-absorbing circuit S4 includes an electric capacity C, and electric capacity C is connected in parallel on MOSFET Q3 D poles and the two of S poles
End, when closing MOSFET Q3, electric capacity C can absorb the reverse induction electric energy that stray inductance L is applied on MOSFET Q3.
The protection circuit for MOSFET of the application has good using effect, will pass through some test datas below
Illustrate, in quick closedown MOSFET Q3, the protection circuit can be effectively protected damages of the MOSFET Q3 from overvoltage.
Fig. 3 is voltage oscillogram when being not provided with protection circuit, wherein, L1 is between MOSFET Q3 D poles and S poles
Voltage VDSThe figure changed over time, L2 are the figure changed over time of MOSFET Q3 G pole tensions, and L3 is MOSFET Q2
G pole tensions the figure changed over time, L4 is the figures that change over time of drive signal MOS Driver.As shown in figure 3,
When MOS DRIVER level signals are by low uprise, MOSFET Q2 conductings, so that high-power MOS FET Q3 are closed, loop
Reverse induction voltage caused by stray inductance L1 is superimposed upon on high-power MOS FET Q3 so that high-power MOS FET Q3 VDSElectricity
Pressure is up to 600V.
Fig. 4 is voltage oscillogram when setting protection circuit, wherein, T1 is the electricity between MOSFET Q3 D poles and S poles
Press VDSThe figure changed over time, T2 are the figure changed over time of MOSFET Q3 G pole tensions, and T3 is MOSFET Q2's
The figure changed over time of G pole tensions, T4 are the figure that drive signal MOS Driver are changed over time.As shown in figure 4, work as
When MOS DRIVER level signals are by low uprise, MOSFET Q2 conductings, so that high-power MOS FET Q3 are closed, major loop
Reverse induction voltage caused by stray inductance L1 is superimposed upon on high-power MOS FET Q3.When voltage-regulator diode D1 detects big work(
Rate MOSFET Q3 VDSWhen due to voltage spikes is too high, protection circuit starts to act, voltage-regulator diode D1 conducting, make triode Q4 with
Diode D2 is turned on, and then MOSFET Q2 G pole tensions are by high step-down so that high-power MOS FET Q3 G pole tensions are by low
Uprise, so as to slow down high-power MOS FET Q3 switching speed, by high-power MOS FET Q3 VDSDue to voltage spikes is down to
300V.By comparison diagram 3 and Fig. 4 results showed that after protection circuit is set, when closing MOSFET Q3, significantly
Reduce MOSFET Q3 VDSDue to voltage spikes, so as to reduce MOSFET Q3 occur overvoltage infringement risk
The protection circuit for MOSFET of the application includes mu balanced circuit S1, delay circuit S2 and complementary energy circuit S3, its
Middle mu balanced circuit S1 includes voltage-regulator diode D1.Voltage-regulator diode D1 negative pole connection MOSFET Q3 D poles, voltage-regulator diode
D1 positive pole difference connection delay circuit S2 and complementary energy circuit S3；Delay circuit S2 other end connection MOSFET Q2 G poles,
Complementary energy circuit S3 other end connection MOSFET Q3 G poles.In use, MOSFET Q3 initial time is closed, if MOSFET
Q3 VDSVoltage exceedes voltage of voltage regulation, then voltage-regulator diode D1 is turned on, and then delay circuit S2 is both turned on complementary energy circuit S3.
Delay circuit S2 is turned on, and makes the voltage of MOSFET Q2 G poles reduce, and is closed so as to postpone MOSFET Q3.Complementary energy circuit S3 is led
It is logical, make MOSFET Q3 G poles in the short time still in conducting state, closed so as to postpone MOSFET Q3.Postpone MOSFET
Q3 closing motion, you can slow down MOSFET Q3 switching speed, reduce reverse induction voltage, and then reduce MOSFET
Q3 bears the risk of overvoltage.
In addition, whole being completed using discrete device of the protection circuit of the application, therefore, has higher reliability
With anti-interference.This protection circuit employs voltage-regulator diode D3 with operating circuit and isolated, thus it is ensured that between two
Do not interfere.
Above-described the application embodiment does not form the restriction to the application protection domain.
Claims (6)
1. a kind of protection circuit for MOSFET, it is characterised in that the circuit includes mu balanced circuit S1 and the delay of series connection
Circuit S2, wherein the negative pole that the mu balanced circuit S1 includes voltage-regulator diode D1, the voltage-regulator diode D1 is used to connect
MOSFET Q3 D poles, the positive pole of the voltage-regulator diode D1 connect one end of the delay circuit S2；
The other end connection MOSFET Q2 of delay circuit S2 G poles, when closing MOSFET Q3, if MOSFET Q3 D
Voltage V between pole and S polesDSMore than the voltage of voltage regulation of the voltage-regulator diode D1, then the voltage-regulator diode D1 conductings, drive
The delay circuit S2 conductings, make the voltage of MOSFET Q2 G poles reduce, so that MOSFET Q2 delays are to MOSFET Q1
Closing motion.
2. protection circuit as claimed in claim 1, it is characterised in that the delay circuit S2 includes the resistance R1 and three of series connection
Pole pipe Q4, resistance R1 one end connects the positive pole of the voltage-regulator diode D1, described in the other end connection of the resistance R1
Triode Q4 b poles；
The c poles of the triode Q4 are used for the G poles for connecting MOSFET Q2, the e poles ground connection of the triode Q4.
3. protection circuit as claimed in claim 1, it is characterised in that the protection circuit is described also including complementary energy circuit S3
Complementary energy circuit S3 one end connects the positive pole of the voltage-regulator diode D1, and the other end of the complementary energy circuit S3 is used to connect
MOSFET Q3 G poles,
When closing MOSFET Q3, if the voltage V between MOSFET Q3 D poles and S polesDSMore than the voltage-regulator diode D1's
Voltage of voltage regulation, then the voltage-regulator diode D1 conductings, drive the complementary energy circuit S3 to turn on, make the voltage of MOSFET Q3 G poles
Improve, so that MOSFET Q3 closing motion delay.
4. protection circuit as claimed in claim 3, it is characterised in that the complementary energy circuit S3 include series connection diode D2 with
Resistance R2,
The positive pole of the diode D2 connects the positive pole of the voltage-regulator diode D1, and the negative pole of the diode D2 connects the electricity
R2 one end is hindered,
The other end connection MOSFET Q3 of resistance R2 G poles.
5. protection circuit as claimed in claim 1, it is characterised in that the protection circuit is described also including energy-absorbing circuit S4
Energy-absorbing circuit S4 is used for both ends of the D poles with S poles for being connected in parallel on MOSFET Q3, and the energy-absorbing circuit S4 is used to absorb stray inductance L
The reverse induction electric energy being applied on MOSFET Q3.
6. protection circuit as claimed in claim 5, it is characterised in that the energy-absorbing circuit S4 includes an electric capacity C, the electric capacity
C is connected in parallel on MOSFET Q3 D poles and the both ends of S poles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970367.XA CN107565942B (en) | 2017-10-16 | Protection circuit for MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970367.XA CN107565942B (en) | 2017-10-16 | Protection circuit for MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107565942A true CN107565942A (en) | 2018-01-09 |
| CN107565942B CN107565942B (en) | 2024-04-19 |
Family
ID=
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86103419A (en) * | 1985-05-15 | 1986-11-12 | 东芝株式会社 | The circuit overcurrent protection of modulated conductivity type MOS fet |
| JPH06152353A (en) * | 1992-11-05 | 1994-05-31 | Toyo Electric Mfg Co Ltd | Excess current protecting system for insulating gate type bipolar transistor |
| JP2003143831A (en) * | 2001-11-06 | 2003-05-16 | Fuji Electric Co Ltd | Gate drive circuit |
| JP2004048843A (en) * | 2002-07-09 | 2004-02-12 | Meidensha Corp | Drive circuit of voltage driving type power element |
| US20080203926A1 (en) * | 2007-02-27 | 2008-08-28 | Fuji Electric Device Technology Co., Ltd. | Load driving circuit, driver IC having a load driving circuit, and plasma display panel having a driver IC |
| JP2009207077A (en) * | 2008-02-29 | 2009-09-10 | Denso Corp | Semiconductor integrated circuit device |
| CN102412711A (en) * | 2011-11-22 | 2012-04-11 | 常熟市董浜镇华进电器厂 | High-speed driving circuit for power MOS (Metal-Oxide Semiconductor) tube |
| CN102780474A (en) * | 2012-07-20 | 2012-11-14 | 华为技术有限公司 | Insulated gate bipolar transistor control circuit |
| CN207218656U (en) * | 2017-10-16 | 2018-04-10 | 云南电网有限责任公司电力科学研究院 | A kind of protection circuit for MOSFET |
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86103419A (en) * | 1985-05-15 | 1986-11-12 | 东芝株式会社 | The circuit overcurrent protection of modulated conductivity type MOS fet |
| JPH06152353A (en) * | 1992-11-05 | 1994-05-31 | Toyo Electric Mfg Co Ltd | Excess current protecting system for insulating gate type bipolar transistor |
| JP2003143831A (en) * | 2001-11-06 | 2003-05-16 | Fuji Electric Co Ltd | Gate drive circuit |
| JP2004048843A (en) * | 2002-07-09 | 2004-02-12 | Meidensha Corp | Drive circuit of voltage driving type power element |
| US20080203926A1 (en) * | 2007-02-27 | 2008-08-28 | Fuji Electric Device Technology Co., Ltd. | Load driving circuit, driver IC having a load driving circuit, and plasma display panel having a driver IC |
| JP2009207077A (en) * | 2008-02-29 | 2009-09-10 | Denso Corp | Semiconductor integrated circuit device |
| CN102412711A (en) * | 2011-11-22 | 2012-04-11 | 常熟市董浜镇华进电器厂 | High-speed driving circuit for power MOS (Metal-Oxide Semiconductor) tube |
| CN102780474A (en) * | 2012-07-20 | 2012-11-14 | 华为技术有限公司 | Insulated gate bipolar transistor control circuit |
| CN207218656U (en) * | 2017-10-16 | 2018-04-10 | 云南电网有限责任公司电力科学研究院 | A kind of protection circuit for MOSFET |
Non-Patent Citations (2)
| Title |
|---|
| DAVIDE MARANO: "Self-biased dual-path push-pull output buffer amplifier topology for LCD driver applications", 《2011 IEEE INTERNATIONAL SYMPOSIUM OF CIRCUITS AND SYSTEMS (ISCAS)》, pages 29 - 32 * |
| 邓自佑: "一种混合音频功率放大电路的设计", 《硅谷》, pages 85 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103178694B (en) | Insulated gate bipolar transistor gate driving push-pull circuit | |
| KR20110123169A (en) | Switching gate drive | |
| CN107809171B (en) | Switching power supply and driving method and driving circuit of power switching tube thereof | |
| CN110112893A (en) | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube | |
| CN202564928U (en) | Insulated gate bipolar transistor protection circuit | |
| CN107852159A (en) | Drive device | |
| US20160079401A1 (en) | Short-circuit protection circuits, system, and method | |
| CN103066809A (en) | Improved residual current device (RCD) buffer circuit applied to direct tandem type insulated gate bipolar translator (IGBT) | |
| CN103199846B (en) | The sluggish thermal-shutdown circuit of CMOS | |
| CN109995350B (en) | Drive stage short-circuit protection device and protection method of power field effect transistor | |
| CN203180759U (en) | Gate driving push-pull circuit of insolated gate bipolar transistor | |
| CN203027163U (en) | High-voltage pulse power supply | |
| US9490794B1 (en) | Dynamic shutdown protection circuit | |
| CN207218656U (en) | A kind of protection circuit for MOSFET | |
| Bhalla et al. | Switching behaviour of USCi's SiC cascodes | |
| CN207070035U (en) | The drain modulation circuit of GaN high electron mobility transistor | |
| CN203933358U (en) | A kind of field effect transistor drive circuit for high frequency low voltage system | |
| CN210297542U (en) | SiC power device driving circuit capable of inhibiting bridge arm crosstalk | |
| CN107565942A (en) | A kind of protection circuit for MOSFET | |
| CN208571903U (en) | A kind of chip breaking circuit and the Switching Power Supply comprising the circuit | |
| CN104393571A (en) | IGBT module over-current protection system | |
| CN204424877U (en) | A kind of IGBT module Over Current Protection System | |
| CN110289601A (en) | For protecting the active clamp circuit for being built in driving IC of IGBT | |
| CN115314038A (en) | Gate-level buffer circuit based on SiC power device | |
| CN102545683B (en) | Secondary follow-up voltage prestabilizing filament inverter circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Xu Shoudong Inventor after: Duan Ruimin Inventor after: Han Yu Inventor after: Xu Zhi Inventor after: Zhao Yanpeng Inventor after: Wang Shaobo Inventor after: Ren Zhijun Inventor after: Li Zhibing Inventor after: Li Shengnan Inventor after: Chen Yong Inventor after: Ma Hongsheng Inventor after: Zhou Wenwen Inventor after: Zhang Li Inventor after: Guo Cheng Inventor after: Zhou Xin Inventor after: Li Junpeng Inventor before: Xu Shoudong Inventor before: Chen Yong Inventor before: Zhang Li |
|
| CB03 | Change of inventor or designer information | ||
| GR01 | Patent grant |