CN107565002A - 发光装置及其制造方法 - Google Patents
发光装置及其制造方法 Download PDFInfo
- Publication number
- CN107565002A CN107565002A CN201710371383.7A CN201710371383A CN107565002A CN 107565002 A CN107565002 A CN 107565002A CN 201710371383 A CN201710371383 A CN 201710371383A CN 107565002 A CN107565002 A CN 107565002A
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- light
- emitting device
- recess
- mother metal
- manufacture method
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- 238000000034 method Methods 0.000 title claims abstract description 173
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
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- 239000011521 glass Substances 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
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- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
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- 150000002739 metals Chemical class 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000004411 aluminium Substances 0.000 description 2
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020440 K2SiF6 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 230000037237 body shape Effects 0.000 description 1
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- WNCYAPRTYDMSFP-UHFFFAOYSA-N calcium aluminosilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O WNCYAPRTYDMSFP-UHFFFAOYSA-N 0.000 description 1
- 229940078583 calcium aluminosilicate Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
本发明提供可高效地制造具有能够小型化的结构的发光装置的制造方法以及能够轻量化的发光装置。发光装置的制造方法具有:准备平板状的母材的工序,在俯视观察时,该母材具有第一部以及包围所述第一部的第二部;向所述第一部安装发光元件的工序;形成凹部的工序,在安装所述发光元件后,使所述第一部与所述第二部的上下方向上的相对位置关系偏移,形成将所述第一部的上表面作为底面并将所述第二部的侧面的至少一部分作为内侧面的凹部;以及将所述第一部与所述第二部接合的工序。
Description
技术领域
本发明涉及发光装置及其制造方法。
背景技术
使用LED等发光元件的发光装置容易得到较高的发光效率,在显示器等的背光灯以及照明装置等许多设备中使用。为了实现发光装置的小型化,已知在安装发光元件后形成包围发光元件的光反射性树脂的发光装置的制造方法。例如,提出了如下的发光二极管的制造方法,该制造方法包括:第一工序,利用透光性树脂覆盖基板上的LED元件;第二工序,在透光性树脂固化后去除LED元件的中间部的透光性树脂;第三工序,向由第二工序形成的槽部填充光反射性树脂;以及第四工序,在光反射性树脂固化后,以在LED元件的周围残留有光反射性树脂的方式将基板切断而分离成各个发光二极管(参照专利文献1)。
在先技术文献
专利文献
专利文献1:日本特开2002-368281号公报
发明内容
发明所要解决的课题
在上述的制造方法中,在安装发光元件后形成包围发光元件的反射性树脂,但若光反射性树脂的粘度变高,则为了使该树脂遍及槽部的各个角落需要花费时间,因此存在作业效率降低的可能性。因此,本发明的目的在于提供可高效地制造具有能够小型化的结构的发光装置的制造方法以及能够轻量化的发光装置。
用于解决课题的方案
本发明所涉及的发光装置的制造方法具有:准备平板状的母材的工序,在俯视观察时,该母材具有第一部以及包围所述第一部的第二部;向所述第一部安装发光元件的工序;形成凹部的工序,在安装所述发光元件后,使所述第一部与所述第二部的上下方向上的相对位置关系偏移,形成将所述第一部的上表面作为底面并将所述第二部的侧面的至少一部分作为内侧面的凹部;以及将所述第一部与所述第二部接合的工序。
发光装置具备:母材,其具有第一部以及具备供所述第一部嵌合的大小的贯通孔的第二部,且该母材具有将所述第一部的上表面作为底面并将所述第二部的侧面的至少一部分作为内侧面的凹部;以及发光元件,其安装于所述凹部的底面。
发明效果
根据上述的制造方法,可高效地制造具有能够小型化的结构的发光装置。另外,根据上述的发光装置,能够实现发光装置的轻量化。
附图说明
图1A是对实施方式1的制造方法所具有的准备母材的工序进行说明的示意俯视图。
图1B是示出图1A中的1B-1B剖面的图。
图1C是对实施方式1的制造方法所具有的安装发光元件的工序进行说明的示意剖视图。
图1D是对实施方式1的制造方法所具有的形成凹部的工序进行说明的示意剖视图。
图1E是对实施方式1的制造方法所具有的将第一部与第二部接合的工序进行说明的示意俯视图。
图1F是示出图1E中的1F-1F剖面的图。
图1G是对实施方式1的制造方法所具有的将第二部切断的工序进行说明的示意剖视图。
图2A是对实施方式2的制造方法所具有的准备母材的工序进行说明的示意俯视图。
图2B是示出图2A中的2B-2B剖面的图。
图2C是对实施方式2的制造方法所具有的安装发光元件的工序进行说明的示意剖视图。
图2D是对实施方式2的制造方法所具有的使第一部从母材分离的工序进行说明的示意剖视图。
图2E是对实施方式2的制造方法所具有的形成凹部的工序进行说明的示意剖视图。
图2F是对实施方式2的制造方法所具有的将第一部与第二部接合的工序进行说明的示意剖视图。
图2G是对实施方式2的制造方法所具有的将第二部切断的工序进行说明的示意剖视图。
图3A是对实施方式3的制造方法所具有的准备母材的工序进行说明的示意俯视图。
图3B是示出图3A中的3B-3B剖面的图。
图3C是对实施方式3的制造方法所具有的安装发光元件的工序进行说明的示意剖视图。
图3D是对实施方式3的制造方法所具有的使第一部从母材分离的工序进行说明的示意剖视图。
图3E是对实施方式3的制造方法所具有的形成凹部的工序进行说明的示意剖视图。
图3F是对实施方式3的制造方法所具有的将第一部与第二部接合的工序进行说明的示意剖视图。
图3G是对实施方式3的制造方法所具有的将第二部切断的工序进行说明的示意剖视图。
图4A是对实施方式4的制造方法所具有的准备母材的工序进行说明的示意俯视图。
图4B是示出图4A中的4B-4B剖面的图。
图4C是对实施方式4的制造方法所具有的安装发光元件的工序进行说明的示意剖视图。
图4D是对实施方式4的制造方法所具有的形成凹部的工序进行说明的示意剖视图。
图4E是对实施方式4的制造方法所具有的将第一部与第二部接合的工序中的、向凹部配置光反射性构件的工序进行说明的示意俯视图。
图4F是对实施方式4的制造方法所具有的将第一部与第二部接合的工序进行说明的示意俯视图。
图4G是示出图4F中的4G-4G剖面的图。
图4H是对实施方式4的制造方法所具有的将第二部切断的工序进行说明的示意剖视图。
附图标记说明
1、2、3、4 发光装置;
10 母材;
12 第一部;
14 第二部;
20 导体布线;
30 发光元件;
40 密封构件;
50 引线;
60 光反射性构件;
D 内侧面的倾斜角度;
W 第一部与第二部分离的宽度;
X 贯通孔;
Y 凹部;
Y1 底面;
Y2 内侧面。
具体实施方式
[实施方式1所涉及的发光装置1的制造方法]
图1A至图1G是对实施方式1所涉及的发光装置1的制造方法进行说明的示意图。图1A与图1E是俯视图,图1B至图1D、图1F、以及图1G是剖视图。图1C至图1D、图1F、以及图1G中的观察剖视图的方向与图1B中的观察剖视图的方向相同。如图1A至图1G所示,实施方式1所涉及的发光装置1的制造方法具有:准备平板状的母材10的工序,在俯视观察时该母材具有第一部12以及包围第一部12的第二部14;向第一部12安装发光元件30的工序;形成凹部Y的工序,在安装发光元件30后,使第一部12与第二部14的上下方向上的相对位置关系偏移,形成将第一部12的上表面作为底面Y1并将第二部14的侧面的至少一部分作为内侧面Y2的凹部Y;以及将第一部12与第二部14接合的工序。以下,对各工序进行说明。
(准备母材10的工序)
首先,如图1A与图1B所示,准备平板状的母材10。母材10具有第一部12与第二部14。第二部14具有贯通孔X。第一部12与贯通孔X嵌合,且在俯视观察时,第二部14设置为包围第一部12。在图1B中,示出仅在第二部14所具有的两个贯通孔X的一方嵌合有第一部12,而在另一方未嵌合有第一部12的情形,这是为了便于理解第二部14具有贯通孔X,实际上,在另一方的贯通孔X也嵌合有第一部12。
在本工序中,可以包括准备将预先分离的第一部12与第二部14嵌合而成的平板状的母材10的工序,也可以代替该工序,而包含准备第一部与第二部不分离的母材的工序。在采用后者的工序的情况下,例如,在本工序与后述的安装发光元件的工序之间,即,在通过本工序准备好母材后且安装发光元件前,进行使第一部从母材分离的工序、以及使第一部与通过第一部的分离而产生的贯通孔嵌合的工序即可。或者,如后述的实施方式2、3中说明那样,在安装发光元件的工序与形成凹部的工序之间,即,在安装发光元件后且形成凹部前,进行使第一部从母材分离的工序即可。使第一部从母材分离的工序例如可以通过基于冲裁的穿孔、激光加工、刀片加工等公知的方法来进行。
作为母材10的材料,可以使用绝缘性材料。例如,可以列举陶瓷、树脂、衍生物、纸浆、玻璃、或者复合材料等。作为树脂,只要是该领域中使用的树脂则可以使用任意树脂。具体而言,可以列举环氧树脂、三嗪衍生物环氧树脂、改性环氧树脂、硅酮树脂、改性硅酮树脂、丙烯酸酯树脂、聚氨酯树脂等。作为陶瓷,可以列举包含氧化铝、氮化铝、氧化锆、氧化钛、氮化钛或者它们的混合物的陶瓷。作为复合材料,可以列举复合树脂、或者将上述的陶瓷等材料与金属或碳等复合而成的材料等。另外,作为复合材料,也可以使用利用树脂等绝缘物覆盖金属而成的材料。作为复合树脂,可以列举玻璃环氧树脂等。
母材10优选具有较高的光反射率。如后述那样,发光元件30安装于第一部12的上表面,且第二部14的侧面的至少一部分配置为包围发光元件30的内侧面Y2。因此,若提高母材10的光反射率,则能够容易地提高收容发光元件30的凹部Y的光反射率。作为母材10具有较高的光反射率的情况,除如使用陶瓷、树脂等作为母材这样的情况那样母材10的材料本身具有较高的光反射率的情况以外,还包括通过使母材10的材料中含有光反射性物质从而使母材10具有较高的光反射性的情况。作为光反射性物质,例如可以列举氧化钛、氧化硅、氧化锆、钛酸钾、氧化铝、氮化铝、氮化硼、莫来石、玻璃填料等。
母材10通常在其表面具有与发光元件30电连接的导体布线20。导体布线20例如可以由铜、铝、金、银、铂、钛、钨、钯、铁、镍等金属或者包含上述金属的合金等形成。导体布线20至少配置在母材10的表面即可,也可以经由母材内部的孔等而配置在母材的背面。
(安装发光元件30的工序)
接下来,如图1C所示,向第一部12的上表面安装发光元件30。具体而言,发光元件30安装在配置于第一部12的导体布线20上。第一部12作为安装发光元件30的元件安装部而发挥功能。需要说明的是,一个第一部12上安装的发光元件30的数量可以如图1C所示为一个,也可以为多个。在安装发光元件30的工序中,尚未形成收容发光元件30的凹部Y,第一部12的上表面与第二部14的上表面的上下方向上的相对位置关系处于大致位于同一平面上,换言之,母材10具有平面状的形状的位置关系。
发光元件30与导体布线20的电连接例如可以通过倒装芯片方式、引线接合方式等来进行。在此,采用基于引线接合方式的电连接。在基于引线接合的情况下,安装发光元件30的工序包括利用引线50将发光元件30与母材10连接的工序。利用引线50将发光元件30与母材10连接是指,利用引线50使设置于母材10的导体布线20与发光元件30的一对电极的至少一方相互电连接。引线50只要是能够使发光元件30的电极与母材10的导体布线20相互电连接的构件即可,例如可以列举使用金、银、铜、白金、铝等金属、以及它们的合金的构件。
发光元件30可以使用发光二极管等半导体发光元件。对于发光元件30,可以根据目的适当选择发光波长处于从紫外区域到红外区域之间的任意的区域的发光元件而使用。可以使用在蓝宝石基板、GaN基板等成长用基板上形成有通过氮化物半导体(例:InN、AlN、GaN、InGaN、AlGaN、InGaAlN)、III-V族化合物半导体、II-VI族化合物半导体等各种半导体等而含有发光层的层叠构造的构件,来作为发光元件30。发光元件30例如可以将正负一对电极配备于同一面侧,也可以将正负一对电极分别配备于对置的面。在此,发光元件30将正负一对电极配备于同一面侧,两电极通过引线50与导体布线20接合。
(形成凹部Y的工序)
接下来,如图1D所示,使第一部12与第二部14的上下方向上的相对位置关系偏移,从而形成将第一部12的上表面作为底面Y1并将第二部14的侧面的至少一部分作为内侧面Y2的凹部Y。即,在安装发光元件30后形成凹部Y。由此,第二部14的至少一部分配置为收容发光元件30的凹部Y的内侧面Y2。使第一部12与第二部14的上下方向上的相对位置关系偏移是指,第一部12与第二部14的上下方向上的相对位置关系从母材10具有平面状的形状的状态起,换言之,从第一部12的上表面与第二部14的上表面位于大致同一平面上的状态起偏移后的状态。在此,大致同一平面是指,构成第一部12的上表面的平面与构成第二部14的上表面的平面的高低差处于±100μm以内的范围。
通过使第一部12以及/或者第二部14沿与第一部12以及第二部14的上表面垂直的方向移动,能够使第一部12与第二部14的上下方向上的相对位置关系偏移。即,(1)可以通过在将第一部固定的状态下,使第二部与第一部相比向上方向移动,从而使相对位置关系偏移,(2)也可以通过在将第二部固定的状态下,使第一部与第二部相比向下方向移动,从而使相对位置关系偏移,(3)还可以通过使第一部与第二部相比向下方向移动,并且使第二部与第一部相比向上方向移动,从而使相对位置关系偏移。第一部以及/或者第二部的固定以及移动可以采用公知的方法。例如,可以列举使用夹具、模具的固定以及移动。
(将第一部12与第二部14接合的工序)
接下来,如图1E以及图1F所示,在第一部12与第二部14的上下方向上的相对位置关系偏移后的状态下,将第一部12与第二部14接合。具体而言,例如,通过将密封构件40填充于凹部Y,能够将第一部12与第二部14接合。即,密封构件40是覆盖发光元件30、引线50从而保护发光元件30、引线50不受尘埃、水分、外力等的影响的构件,在此,密封构件40也可以作为用于将第一部12与第二部14接合的接合构件而使用。
密封构件40优选为使用了使发光元件30的光透过的材料的构件。作为具体的材料,例如可以列举硅酮树脂、环氧树脂等树脂材料。另外,除上述材料以外,可以根据希望含有着色材料、光扩散剂等填料。
密封构件40也可以含有荧光体,该荧光体吸收来自发光元件30的光的至少一部分并发出不同波长的光。作为荧光体的具体的材料,例如在使用蓝色发光元件或者紫外线发光元件作为发光元件30的情况下,作为能够通过上述发光元件激励的荧光体,可以列举由铈活化的钇·铝·石榴石系荧光体(YAG:Ce);由铈活化的镥·铝·石榴石系荧光体(LAG:Ce);由铕以及/或者铬活化的含氮铝硅酸钙系荧光体(CaO-Al2O3-SiO2:Eu);由铕活化的硅酸盐系荧光体((Sr、Ba)2SiO4:Eu)、β硅铝氧氮荧光体、CASN系荧光体、SCASN系荧光体等氮化物系荧光体、KSF系荧光体(K2SiF6:Mn)、硫化物系荧光体、量子点荧光体等。通过上述荧光体、蓝色发光元件或者紫外线发光元件的组合,能够得到所希望的发光颜色的发光装置(例如白色系的发光装置)。
将第一部12与第二部14接合的工序还可以包括如下工序,在填充密封构件40前,利用填缝件、密封件填埋第一部12与第二部14之间的间隙。作为填缝件、密封件,可以使用树脂、玻璃、陶瓷、金属等。将第一部12与第二部14接合的工序包括填埋第一部12与第二部14之间的间隙的工序、以及向凹部Y填充密封构件40的工序这两个工序,从而能够进一步提高第一部12与第二部14的接合强度。另外,能够减少密封构件40从第一部12与第二部14之间的间隙泄漏的可能性。
(切断的工序)
如图1G所示,在将第一部12与第二部14接合后,可以以第二部14的至少一部分的侧面作为凹部Y的内侧面Y2而残留的方式,将第二部14切断。通过进行这种切断,能够将一个发光装置1的尺寸加工成所希望的尺寸。另外,能够使一个发光装置1所具有的发光部(换言之,凹部Y)的数量成为所希望的数量。切断可以使用刀片、激光等。需要说明的是,一个发光装置1所具有的凹部Y的数量可以为一个,也可以为多个。在此,凹部Y的数量为一个。需要说明的是,在一个发光装置具有多个凹部的情况下,本工序的切断不是必需的。换言之,,可以进行切断而使各个发光装置具备多个发光部(凹部),也可以不进行切断而成为一个发光装置具有母材所具有的全部多个凹部的状态,形成具有多个发光部(凹部)的一个发光装置。
如以上说明那样,根据本实施方式所涉及的发光装置1的制造方法,在载置发光元件30的工序后,进行形成收纳发光元件30的凹部Y的工序。即,在将发光元件30安装于平板状的母材10后,形成包围发光元件30的内侧面Y2。因此,与向预先形成有凹部的母材的底面配置发光元件的情况相比,能够拉近发光元件30与凹部Y的内侧面Y2之间的距离。即,通常在向凹部的底面安装发光元件的情况下,即便想要将发光元件以接近凹部的内侧面的方式安装,也存在发光元件的安装中使用的芯片夹等芯片接合工具与凹部的内侧面接触的可能性,因此需要在发光元件与凹部的内侧面之间隔开一定的距离。然而,根据本实施方式所涉及的发光装置1的制造方法,与向预先形成的凹部的底面配置发光元件的情况相比,能够缩短发光元件30与凹部Y的内侧面Y2的距离,因此可高效地制造具有能够小型化的结构的发光装置1。
[实施方式2所涉及的发光装置2的制造方法]
图2A至图2G是对实施方式2所涉及的发光装置2的制造方法进行说明的示意图。图2A是俯视图,图2B至图2G是剖视图。图2C至图2G中的观察剖视图的方向与图2B中的观察剖视图的方向相同。实施方式2所涉及的发光装置2的制造方法与实施方式1所涉及的发光装置1的制造方法的不同之处在于,在载置发光元件30的工序(参照图2C)与形成凹部Y的工序(参照图2E)之间,具有使第一部12从母材10分离的工序(参照图2D)。例如可以通过沿着第一部12的外周照射激光,以从母材10中掘削出第一部12的方式进行第一部12从母材10的分离。激光加工由于切断引起的应力的影响小,因此适用于在第一部12安装有发光元件30的状态下的、使第一部12从母材10分离的手段。对于其他方面,具有与实施方式1所涉及的发光装置1的制造方法同样的工序。
根据实施方式2所涉及的发光装置2的制造方法,也与实施方式1所涉及的发光装置1的制造方法同样,在将发光元件安装于平板状的母材10后形成收容发光元件30的凹部Y,因此能够将发光元件30以接近凹部Y的内侧面Y2的方式安装。因此,根据实施方式2所涉及的发光装置2的制造方法,也可高效地制造能够小型化的发光装置2。
[实施方式3所涉及的发光装置3的制造方法]
图3A至图3G是对实施方式3所涉及的发光装置3的制造方法进行说明的示意图。图3A是俯视图,图3B至图3G是剖视图。图3C至图3G中的观察剖视图的方向与图3B中的观察剖视图的方向相同。如图3A至图3G所示,实施方式3所涉及的发光装置3的制造方法与实施方式2所涉及的发光装置2的制造方法的不同之处在于,凹部Y的内侧面Y2是倾斜面。对于其他方面,具有与实施方式2所涉及的发光装置2的制造方法同样的工序。
根据实施方式3所涉及的发光装置3的制造方法,也与实施方式1所涉及的发光装置1的制造方法同样,在将发光元件安装于平板状的母材10后形成收容发光元件30的凹部Y,因此能够将发光元件30以接近凹部Y的内侧面Y2的方式安装。因此,根据实施方式3所涉及的发光装置3的制造方法,也可高效地制造能够小型化的发光装置3。
另外,根据实施方式3所涉及的发光装置3的制造方法,通过调整第一部12与第二部14之间的宽度W以及内侧面Y2的倾斜角度D,能够在使第一部12与第二部14的上下方向上的相对位置关系偏移后的状态下,使第一部12与第二部14的贯通孔X配合,从而通过第二部14保持第一部12。因此,根据实施方式3所涉及的发光装置3的制造方法,能够在形成凹部Y的工序中,更加容易地形成凹部Y。
通过在第一部12被第二部14的贯通孔X保持的状态下,进一步例如将第一部12向第二部14按压等、对第一部12、第二部14、或者第一部12以及第二部14施加压力、热量,从而第一部12与第二部14更加牢固地紧贴,能够使第一部12与第二部14不经由密封构件40地接合。通过不经由密封构件40地将第一部12与第二部14接合,从而可以不考虑密封构件40的劣化、泄漏。
[实施方式4所涉及的发光装置4的制造方法]
图4A至图4H是对实施方式4所涉及的发光装置4的制造方法进行说明的示意图。图4A与图4F是俯视图,图4B至图4E、图4G、以及图4H是剖视图。图4C至图4E、图4G、以及图4H中的观察剖视图的方向与图4B中的观察剖视图的方向相同。实施方式4所涉及的发光装置4的制造方法与实施方式1所涉及的发光装置1的制造方法的不同之处在于,作为将第一部12与第二部14接合的工序,具有在填充密封构件40前配置光反射性构件60的工序,该光反射性构件60覆盖凹部Y的底面Y1以及内侧面Y2各自的至少一部分(参照图4E)。对于其他方面,具有与实施方式1所涉及的发光装置1的制造方法同样的工序。
在本实施方式中,凹部Y的底面Y1以及内侧面Y2各自的整面被光反射性构件60覆盖,但如上所述,光反射性构件覆盖凹部的底面以及内侧面各自的至少一部分即可。需要说明的是,在凹部Y的底面Y1以及内侧面Y2各自的整面被光反射性构件60覆盖的情况下,密封构件40不与第一部12以及第二部14接触。密封构件40无需一定与第一部12以及第二部14接触,也可以经由如光反射性构件60这样的其他构件而连接。
根据实施方式4所涉及的发光装置4的制造方法,也与实施方式1所涉及的发光装置1的制造方法同样,在将发光元件30安装于平板状的母材10后形成收容发光元件30的凹部Y,因此能够将发光元件30以接近凹部Y的内侧面Y2的方式安装。并且,将第一部12与第二部14接合的工序包括配置覆盖凹部Y的底面Y1以及内侧面Y2各自的至少一部分的光反射性构件60的工序、以及向凹部Y填充密封构件40的工序这两个工序,从而能够进一步提高第一部12与第二部14的接合强度。
另外,根据实施方式4所涉及的发光装置4的制造方法,凹部Y的内侧面Y2的至少一部分被光反射性构件60覆盖,因此自内侧面Y2的漏光减少。因此,通过减薄俯视时的第二部14的宽度,可制造能够进一步小型化的发光装置4。
另外,根据实施方式4所涉及的发光装置4的制造方法,在形成凹部Y后,在凹部Y的内侧面Y2配置光反射性构件60,因此能够进一步提高发光元件30的周围的反射率。因此,根据实施方式4所涉及的发光装置4的制造方法,能够得到光导出效率更加优异的发光装置4。
光反射性构件60由能够反射从发光元件30出射的光的材料形成。具体而言,光反射性构件60优选由含有光反射性物质的树脂构件形成。这是由于树脂构件的处理以及加工容易。作为树脂构件,例如可以使用包含硅酮树脂、改性硅酮树脂、环氧树脂、改性环氧树脂、丙烯酸树脂中的1种以上的树脂或者包含上述树脂中的2种以上的混合树脂等。作为光反射性物质,可以举出氧化钛、氧化硅、氧化锆、钛酸钾、氧化铝、氮化铝、氮化硼、莫来石、玻璃填料等。
光反射性构件60能够在形成凹部Y后,通过印刷、喷射、浇注等公知的方法而形成。其中,优选通过浇注而形成。需要说明的是,如上所述,第一部12与第二部14之间的间隙能够由填缝件、密封件等填埋,通过使上述构件含有光反射性物质,也可以将上述构件作为光反射性构件而使用。当然,也可以如本实施方式那样,与填缝件、密封件等分开地设置光反射性构件60。
[实施方式1-4所涉及的发光装置1-4]
接下来,对实施方式1-4所涉及的发光装置1-4进行说明。发光装置1-4能够通过实施方式1-4所涉及的发光装置的制造方法高效地制造,但也可以通过其他制造方法制造。
首先,对实施方式1、2所涉及的发光装置1、2进行说明。如图1G、图2G所示,发光装置1、2具有母材10与发光元件30。母材10具有第一部12以及具备供第一部12嵌合的大小的贯通孔X的第二部14。换言之,,在俯视观察时,第二部14具有与第一部12相同的大小、或比第一部12大一圈的区域的贯通孔X。第一部12呈大致柱体形状,具有上表面、与上表面平行的下表面、以及与上表面和下表面相接的侧面,下表面与侧面大致正交。在本实施方式中,第一部12的上表面以及下表面呈角部带有圆角的大致长方形,但也可以呈大致圆形、大致椭圆形、大致多边形等。
母材10具有凹部Y,该凹部Y将第一部12的上表面作为底面并将第二部14的侧面(具体而言为贯通孔X的侧面)的至少一部分作为内侧面。凹部Y具有与底面(换言之,第一部12的上表面)大致垂直的内侧面(换言之,第二部14的侧面)。发光元件30安装于第一部12的上表面(换言之,凹部Y的底面)。发光装置1、2具有可小型化的结构。因此,根据发光装置1、2,能够使发光装置小型化从而实现发光装置的轻量化。
接下来,对实施方式3所涉及的发光装置3进行说明。如图3G所示,发光装置3与实施方式1、2所涉及的发光装置1、2的不同之处在于,凹部Y的内侧面是倾斜面。在实施方式3所涉及的发光装置3中,第一部12与第二部14的贯通孔X嵌合。第二部14具有比第一部12大一圈的贯通孔X。第一部12呈下表面的面积比上表面的面积小的大致锥台形状。换言之,,在俯视观察时,第一部12的上表面的外缘位于比第一部12的下表面的外缘靠外侧的位置。第一部12具有上表面、与上表面平行的下表面、以及与上表面和下表面相接的侧面。在本实施方式中,第一部的上表面以及下表面呈角部带有圆角的大致长方形,但也可以呈大致圆形、大致椭圆形、大致多边形等。
母材10具有凹部Y,该凹部Y将第一部12的上表面作为底面并将第二部14的侧面(具体而言为贯通孔X的侧面)的至少一部分作为内侧面。凹部Y的内侧面具有以从凹部Y的底面朝向开口部扩大的方式倾斜的倾斜面。
在本实施方式中,第一部12的上表面的形状与第二部14的下表面侧的贯通孔X的俯视形状为大致相似的形状,第一部12的上表面的面积比第二部14的下表面侧的贯通孔X的俯视形状的面积大。换言之,,即便不通过粘合材料将第一部12与第二部14接合,第一部12也不会从贯通孔X脱落。由此,能够提高第一部12与第二部14的接合强度,能够使之成为机械强度更加优异的发光装置3。
发光装置3具有能够小型化的结构。因此,根据发光装置3,能够使发光装置小型化从而实现发光装置的轻量化。另外,根据发光装置3,凹部Y的内侧面具有朝向上方的倾斜面,从而对来自发光元件30的光进行反射使得光导出效率提高。另外,能够成为具有比发光装置的底面面积大的发光面积的发光装置。
接下来,对实施方式4所涉及的发光装置4进行说明。如图4G所示,发光装置4与实施方式1、2所涉及的发光装置1、2的不同之处在于,具备覆盖凹部Y的内侧面Y2的至少一部分的光反射性构件60。在本实施方式中,光反射性构件60兼作将第一部12与第二部14接合的接合构件。发光装置4具有能够小型化的结构。因此,根据发光装置4,能够使发光装置小型化从而实现发光装置的轻量化。另外,光反射性构件60连续地覆盖凹部Y的底面以及内侧面,从而能够提高第一部12与第二部14的接合强度,能够实现机械强度更加优异的发光装置4。
在实施方式1-4所涉及的发光装置1-4的任一方中,均优选在凹部Y填充有覆盖发光元件30的密封构件40。这样一来,能够通过密封构件40将第一部12与第二部14牢固地接合。另外,母材10优选含有光反射性物质。由此,能够提高凹部Y内的光反射率,能够实现光导出效率更加优异的发光装置。另外,发光装置1-4也可以具备将发光元件30与母材10(更具体而言为母材10上的导体布线20)连接的引线50。
以上,对实施方式进行了说明,但上述说明并不对技术方案所记载的结构进行任何限定。
Claims (14)
1.一种发光装置的制造方法,具有:
准备平板状的母材的工序,在俯视观察时,该母材具有第一部以及包围所述第一部的第二部;
向所述第一部安装发光元件的工序;
形成凹部的工序,在安装所述发光元件后,使所述第一部与所述第二部的上下方向上的相对位置关系偏移,形成将所述第一部的上表面作为底面并将所述第二部的侧面的至少一部分作为内侧面的凹部;以及
将所述第一部与所述第二部接合的工序。
2.根据权利要求1所述的发光装置的制造方法,其中,
在准备所述母材的工序中,准备如下母材,该母材具有:
所述第一部;以及
第二部,其具有供所述第一部嵌合的贯通孔。
3.根据权利要求1所述的发光装置的制造方法,其中,
在准备所述母材的工序与安装所述发光元件的工序之间具有:
使所述第一部从所述母材分离的工序;以及
使所述第一部与通过所述第一部的分离而产生的贯通孔嵌合的工序。
4.根据权利要求1所述的发光装置的制造方法,其中,
在安装所述发光元件的工序与形成所述凹部的工序之间,具有使所述第一部从所述母材分离的工序。
5.根据权利要求1至4中任一项所述的发光装置的制造方法,其中,
在将所述第一部与所述第二部接合的工序中,将密封构件填充于所述凹部,通过所述密封构件覆盖所述发光元件。
6.根据权利要求1至5中任一项所述的发光装置的制造方法,其中,
在形成所述凹部的工序之后,具有通过光反射性构件覆盖所述凹部的内侧面的至少一部分的工序。
7.根据权利要求1至6中任一项所述的发光装置的制造方法,其中,
所述母材含有光反射性物质。
8.根据权利要求1至7中任一项所述的发光装置的制造方法,其中,
安装所述发光元件的工序包括利用引线将所述发光元件与所述母材连接的工序。
9.一种发光装置,具备:
母材,其具有第一部以及具备供所述第一部嵌合的大小的贯通孔的第二部,且该母材具有将所述第一部的上表面作为底面并将所述第二部的侧面的至少一部分作为内侧面的凹部;以及
发光元件,其安装于所述凹部的底面。
10.根据权利要求9所述的发光装置,其中,
所述凹部的内侧面是倾斜面。
11.根据权利要求9或10所述的发光装置,其中,
所述发光装置具备覆盖所述凹部的内侧面的至少一部分的光反射性构件。
12.根据权利要求9至11中任一项所述的发光装置,其中,
在所述凹部具备覆盖所述发光元件的密封构件。
13.根据权利要求9至12中任一项所述的发光装置,其中,
所述母材含有光反射性物质。
14.根据权利要求9至13中任一项所述的发光装置,其中,
所述发光装置具备将所述发光元件与所述母材连接的引线。
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