CN107564976A - A kind of double-side cell and preparation method thereof - Google Patents
A kind of double-side cell and preparation method thereof Download PDFInfo
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- CN107564976A CN107564976A CN201710726971.8A CN201710726971A CN107564976A CN 107564976 A CN107564976 A CN 107564976A CN 201710726971 A CN201710726971 A CN 201710726971A CN 107564976 A CN107564976 A CN 107564976A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of double-side cell and preparation method thereof.The present invention relates to a kind of double-side cell of n type single crystal silicon piece and preparation method thereof.To there is the n type single crystal silicon piece for the group of falling rectangular pyramid to be used as substrate with surface random distribution, p knots and n+ knots are formed respectively in upper and lower surface, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots, silicon nitride layer is formed on the surface of n+ knots, type metal electrode, sintering obtain the double-side cell of the present invention respectively on the two sides of monocrystalline silicon piece.
Description
Technical field
The present invention relates to solar cell and preparation method thereof, more particularly to double-side cell and preparation method thereof.
Background technology
Solar cell is the core devices of photovoltaic generating system, and its development level directly determines the developing water of photovoltaic generation
Flat, it is that people make great efforts to solve the problems, such as always for a long time to improve solar cell conversion efficiency.Traditional solar cell is to utilize P
Type crystalline silicon material, pn-junction is formed in front side of matrix phosphorus diffusion, and deposit antireflective film, back up aluminium paste does back surface field, only just
" one side " solar cell of face light.
At present, industrial high-efficiency crystal silicon solar battery mainly includes：The band intrinsic sheet that SANYO GS company develops is heterogeneous
The slotting finger back junction back contact solar cell that connection solar cell, Sunpower companies of the U.S. develop.Above-mentioned solar cell has higher
Average efficiency, also along with higher cost.
The contradictory relation that double-side solar cell has then been compromised between low cost and high efficiency well.Double-side solar cell knot
Structure is simple, completely compatible with the preparation technology of industrialization conventional P-type solar cell, and it is relatively low to prepare cost.Double-side solar cell with
The most important difference of conventional solar cell is that its generating electricity on two sides designs, and can receive the incident light of front and back simultaneously, from
And improve the conversion efficiency of cell and the power output of component.Double-side solar cell has been international study hotspot.State
The research of two-sided crystal silicon cell has been begun to from the seventies outside.The double-side cell for the volume production that succeeded at present has Sunpower
Back contacts double-side cell, SANYO HIT batteries and Hitachi p-type double-side cell.Two-sided HIT solar cells both ends difference
It is p-type and n-type amorphous silicon membrane, its electrical conductivity is relatively low and has the defects of higher state, thus in order to preferably collect transverse direction
Electric current, need to deposit TCO (transparent conductive oxide film) at the both ends of battery.
It is domestic to be started to walk evening for double-side solar cell, but also conduct extensive research.
CN200910034985.9 discloses a kind of making high efficient two-sided P-shaped crystalline silicon sun electricity based on silk-screen printing technique
The method in pond, its preparation process are：In the positive phosphorus diffusion of P-type silicon piece, growth of passivation layer and anti-reflection layer, front electrode is made,
In the back side boron diffusion of P-type silicon piece or the diffusion of local boron, growth of passivation layer and anti-reflection layer, backplate is made.The invention pair
Hitachi double-side cell structures are improved, and it is studied starting point and is passivating structure.
CN201210149129.X is related to a kind of double-side solar cell production technology, and step is as follows：Making herbs into wool has silicon substrate
There is matte；The window being consistent with electrode pattern is made in silicon substrate shady face；Heat treatment is carried out to silicon substrate to be made to be formed in window
PN junction；Clean silicon substrate；At least two layers of antireflective coating is plated to silicon substrate phototropic face；To matrix silicon shady face coated with antireflection film；Silk
Wire mark brush electrode slurry；Sintering obtains metal electrode, completes the making of cell piece.It is studied starting point and is Passivation Treatment, with
And the diffusion optimization to phosphorus source, boron source.
CN201310001832.0 is related to a kind of Low-cost n-type double-side solar cell, and the preceding surface of solar cell is boron
The boron emitter stage diffuseed to form, deposition has passivation layer and antireflection layer, the back electrode of solar cell back surface above boron emitter stage
Contact position is local phosphorus back surface field, and remaining is undoped region, and being deposited above undoped region has passivation layer, and prepared by preceding surface have
Electrode before metal, prepared by back surface have metal back electrode.It is studied starting point and is laser doping phosphorus source.
CN201610323511.6 is related to a kind of method for preparing n-type crystal silicon double-side solar cell, as follows：It is right
Silicon chip surface carries out making herbs into wool and cleaning；CVD or PVD method the face deposition of heavily doped boron for needing diffused with boron silicon oxide film,
Thickness is 20-200nm；CVD or PVD method are in the sull for the face deposition of heavily doped phosphorus that need to spread phosphorus, thickness 20-
200nm；Constant-pressure and high-temperature spreads in pure air atmosphere or oxygen atmosphere, synchronous obtained doped n-type layer and doped p-type layer；Silicon chip
The wet chemistry method of two-sided oxide removes and cleaning；The deposition of silicon chip passivation on double surfaces antireflective coating；The two-sided gate line electrode of silicon chip
Prepare；The leakproof electric treatment of silicon chip edge.It studies the diffusion that starting point is silicon layer.
In the research of prior art, it is less to focus on influence of the suede structure of monocrystalline silicon piece for battery performance, this hair
A person of good sense passes through a series of research, for monocrystalline silicon piece and Woolen-making liquid etc. analyse in depth, as CN201710060545.5,
CN201710063015.6, CN201710063021.1, CN201710063022.6, CN201710347235.1 etc., the present invention
People thinks that the suede structure of silicon chip is most important for the efficiency for improving double-side cell, by the matching of suede structure, two-sided electricity
Pond performance is greatly improved.
The content of the invention
The present invention is in view of the foregoing, there is provided a kind of double-side cell and preparation method thereof, resulting double-side cell efficiency
The special suede structure of n type single crystal silicon piece used by height, cost is low, and this mainly has benefited from.
The present inventor etc. has found by the result studied, analysed in depth repeatedly, to have down four ribs with surface random distribution
The silicon chip of cone group forms p knots and n respectively as substrate in upper and lower surface+Knot, silicon oxide layer, nitrogen are sequentially formed on the surface of p knots
SiClx layer, in n+The surface of knot forms silicon nitride layer, and on the two sides of monocrystalline silicon piece, difference type metal electrode, sintering, thus complete
Into the present invention.
That is, the present invention provides following double-side solar cell and preparation method thereof.
Present invention firstly provides a kind of double-side solar cell, and it includes n type single crystal silicon piece, metal electrode, the silicon chip table
The face random distribution group of falling rectangular pyramid, what the group of falling rectangular pyramid of the silicon chip included that two or more are at least partly overlapped mutually fall four
Pyramid, p knots and n are formed respectively in the upper and lower surface of silicon chip+Knot, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots,
In n+The surface of knot forms silicon nitride layer, difference type metal electrode, sintering on the two sides of silicon chip.
It is further preferred that the group of falling rectangular pyramid also includes the group of rectangular pyramid and cuboid of at least partly superposition
Close, the cuboid edge is superimposed with the direction for the centerline parallel of falling rectangular pyramid；Further, what described at least part was superimposed falls
Also it is overlapped mutually between rectangular pyramid and the combination of cuboid.
It is further preferred that the width of the group of falling rectangular pyramid is 200-1600nm.
It is further preferred that the ratio of the depth and width of falling rectangular pyramid included by the group of falling rectangular pyramid is 0.2-2: 1.
Present invention simultaneously provides the preparation method of double-side solar cell, step are as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip
Structure；
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer；
Step 3, above-mentioned silicon chip is cleaned, removes silicon chip surface Pyrex and form mask in front side of silicon wafer；
Step 4, phosphorus diffusion is carried out to the lower surface of above-mentioned silicon chip, forms the n of heavy doping+Layer；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip；
Step 8, metal electrode is made in the upper and lower surface of above-mentioned n type single crystal silicon piece respectively, two-sided sun electricity is prepared
Pond；
It is further preferred that in step 1, n type single crystal silicon piece is being carried out to carry out clearly it before metal catalytic etching
Wash, cleaned successively using acetone, ethanol and deionized water.
It is further preferred that the etching of metal catalytic described in step 1 is chemical etching.
It is further preferred that the chemical etching process includes：Silicon chip is positioned in acid Woolen-making liquid, once lost
Carve, cleaning removes metal ion；Monocrystalline silicon piece after cleaning is placed in alkali lye and carries out secondarily etched, cleans and produces.
0.1-1.0mmol/L silver ion, 20-180mmol/L copper ion, 2- are included in the acid Woolen-making liquid
8mol/L HF and 0.1-8mol/L H2O2。
The concentration of silver ion is 0.1,0.2,0.3,0.4,0.49,0.6,0.7,0.8,0.9 in the acid Woolen-making liquid
Or 1.0mmol/L；The concentration of copper ion is 20,30,40,50,60,70,80,90,100,110,120,130,140,150,
160th, 170 or 180mmol/L；HF concentration is 2,2.5,3,3.5,4,4.5,5,5.5,6,6.5,7,7.5 or 8mol/L；H2O2
Concentration be 0.1,0.2,0.3,0.4,0.5,0.6,0.8,1,1.25,1.5,1.75,2,2.25,2.5,2.75,3,3.25,
3.5th, 3.75,4,4.25,4.5,4.75,5,5.5,6,6.5,7,7.5 or 8mol/L.
The time once etched is 60,120,180,240,300,360,420,480,540 or 600s, temperature be for
20th, 21,22,23,24,25,26,27,28,29,30,31,32,33,34 or 35 DEG C.
The alkali lye is KOH or NaOH solution containing 1,2,3,4,5,6,7,8,9 or 10% (weight).
The secondarily etched time be 5,10,20,30,40,50,60,70,80,90,100,120,140,160,180,
200th, 250 or 300s, temperature 20,21,22,23,24,25,26,27,28,29 or 30 DEG C.Preferably, it is described secondarily etched
Time is more than or equal to 120s.
It is further preferred that in step 2 boron spread, diffusion temperature be 900-1100 DEG C, preferably 1000 DEG C, time 10-
100min, preferably 60min, diffused sheet resistance scope are 40-120 Ω/sq.
It is further preferred that in step 3, concentration range is used to remove Pyrex, cleaning for 5%-10% HF solution
Time is 1-5min.
It is further preferred that phosphorus diffusion in step 4, diffusion temperature is 700-900 DEG C, preferably 800 DEG C, time 50-
100min, preferably 60min, diffused sheet resistance scope are 50-120 Ω/sq.
It is further preferred that silicon oxide film thickness is 1nm-20nm in step 6.
It is further preferred that silicon nitride film thickness is 70nm-100nm in step 6 and step 7.
Beneficial effect
The present invention is initially formed the special suede structure of falling rectangular pyramid in n-type single-crystal silicon substrate upper and lower surface, is somebody's turn to do four ribs
The matte of wimble structure is the special suede structure that contacts with each other or be superimposed between rectangular pyramid that falls by random distribution.Due to the silicon chip
Special suede structure in have different levels light trapping structure, effective contact area of light can be increased, produce more light
Raw carrier, while the reasonable transfer of diverse location photo-generated carrier can be realized.
For the n type single crystal silicon substrate, it diffuses to form p layers by boron, forms PN junction with substrate, utilizes back-to-back one side
Phosphorus diffusion forms n+ layers in n-type silicon substrate lower surface by phosphorus diffusion, and forming a height with substrate ties.
Compared with prior art, efficient n-type double-side solar cell of the invention, due to being entered in preparation process using mask
Row phosphorus diffusion, influenceed so as to not produce cross-diffusion to front when forming back side height and tying；Pass through two in the front of battery
Silica adds the passivation of silicon nitride, and it is compound to effectively reduce few son, improves the open-circuit voltage of battery, improves front and back
Photoelectric transformation efficiency；Its preparation process is easy, easy to operate, efficiency high, easily realizes scale of mass production, cost-effective.
And the suede structure of falling rectangular pyramid obtained by the present invention, not only should with relatively low reflectivity, what is more important
The size of suede structure is submicron order or micron order, and body structure surface is smooth, so as to not increase while light absorbs are increased
Extra Carrier recombination, is effectively utilised optical gain.Further, since the architectural characteristic for the uniqueness of falling rectangular pyramid,
The slurry in silk-screen printing is preferably filled in the structure, more excellent electrode contact is obtained, effectively reduces
The series resistance of battery, improve fill factor, curve factor.In a word, due to the suede structure of falling rectangular pyramid have it is low reflection, it is low compound, easy
The characteristic of filling so that N-type double-side cell efficiency is significantly improved in the present invention.
Brief description of the drawings
Fig. 1 is the surface SEM figures of the making herbs into wool silicon chip in the embodiment of the present invention 1.As can be seen from the figure silicon wafer suede structure
Include the suede structure of falling rectangular pyramid being at least partly overlapped mutually by two or more, the single suede structure of falling rectangular pyramid,
Suede structure (the cuboid edge and the centerline parallel of falling rectangular pyramid of the combination of rectangular pyramid and cuboid of partial stack
It is superimposed on direction), and partial stack falls the suede structure that the combination of rectangular pyramid and cuboid is overlapped mutually, and the suede
Face structure is based on the suede structure or its suede structure being overlapped mutually of the combination of rectangular pyramid and cuboid of partial stack
Want suede structure.
Fig. 2 is the surface SEM figures of the making herbs into wool silicon chip in the embodiment of the present invention 2.
Fig. 3 is the section SEM figures of the making herbs into wool silicon wafer suede structure in the embodiment of the present invention 3, is divided into typical case inside figure centre circle
Partial stack fall rectangular pyramid and cuboid combination suede structure, the cuboid along and the centerline parallel of falling rectangular pyramid
Direction on be superimposed.
Embodiment
The present invention is described below in more detail to contribute to the understanding of the present invention.
It should be appreciated that the term or word that use in the specification and in the claims are not construed as having
The implication limited in dictionary, and be interpreted as on the basis of following principle having and its implication one in the context of the present invention
The implication of cause：The concept of term can be limited suitably by inventor for the best illustration to the present invention.
And the suede structure of falling rectangular pyramid obtained by the present invention, not only with relatively low reflectivity, what is more important suede
Face physical dimension is submicron order or micron order, and body structure surface is smooth, extra so as to not increase while light absorbs are increased
Carrier recombination so that optical gain is effectively utilised.Further, since the architectural characteristic for the uniqueness of falling rectangular pyramid, makes
In silk-screen printing, slurry can be preferably filled in the structure, obtained more excellent electrode contact, effectively reduced battery
Series resistance, improve fill factor, curve factor.In a word, because the structure of falling rectangular pyramid has low reflection, the low compound, spy that easily fills
Property so that N-type monocrystalline double-side cell efficiency is significantly improved in the present invention.
In the present invention, it is described fall rectangular pyramid at the top of refer to the thin of the depths of falling rectangular pyramid, portion more than top
It is divided into down the conical section of rectangular pyramid, and the square face opening portion of rectangular pyramid is the bottom of rectangular pyramid.Four ribs
One or more of the top of cone in point, line, square, circular, the oval or closed figures that are surrounded by a plurality of curve.
In addition, in the present invention, rectangular pyramid and cuboid of the group of falling rectangular pyramid also including at least partly superposition
Combination, the cuboid edge are superimposed with the direction for the centerline parallel of falling rectangular pyramid；It can also regard part or all of rescinded angle as
Tetrahedron, preferably have that 2 angles are cut or 4 angles are all cut in the tetrahedron bottom four corners；Further, it is described at least
Partial stack falls also to be overlapped mutually between rectangular pyramid and the combination of cuboid.
In the monocrystalline silicon piece texture structure of the present invention, the group of falling rectangular pyramid is random distribution, is not closely arranged
Making herbs into wool silicon chip surface is distributed in, and a small amount of flat cone region be present in silicon chip surface；It is main in silicon chip surface suede structure in addition
For two, three, four, five or the suede structure of multiple superpositions of falling rectangular pyramid；In any case, in the suede structure
It is also possible to be dispersed with the suede structure of a small amount of single rectangular pyramid.
Due to the matte of the above-mentioned structure of falling rectangular pyramid be by random distribution fall rectangular pyramid between contact with each other or be superimposed after
The special suede structure formed, therefore there is the light trapping structure of different levels on above-mentioned making herbs into wool silicon chip surface, add light has
Contact area is imitated, produces more photo-generated carriers, while the reasonable transfer of diverse location photo-generated carrier can be realized.
The preparation of the double-side solar cell of embodiment 1,
Step is as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip
Structure；
Monocrystalline silicon piece is used into HF and HNO first3In mixed solution 3min is handled at 8 ± 1 DEG C；
Metal catalytic etching silicon wafer is used afterwards, and the suede structure of falling rectangular pyramid is formed in silicon chip surface；The metal catalytic
Etch and etched for multiple etching, first time etching for acid Woolen-making liquid, etch etched for alkali lye for the second time.
Wherein, 0.1mmol/L silver ion, 100mmol/L copper ion, 5.6mol/L are included in the acid Woolen-making liquid
HF and 1.0mol/L H2O2.The time once etched is 540s, and temperature is 27 DEG C.
Monocrystalline silicon piece after etch cleaner is placed in alkali lye and carries out secondarily etched, cleans and produces.Wherein described alkali
Liquid is containing 2% NaOH solution；The secondarily etched time is 180s, and temperature is 25 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 900 DEG C, and the time is
100min, diffused sheet resistance are 75 Ω/sq；
Step 3, concentration is used to be cleaned for 5% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex,
Scavenging period 5min, and form mask in front side of silicon wafer；
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 800
DEG C, time 80min, diffused sheet resistance is 75 Ω/sq；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein
The thickness of oxide passivated film is 5nm, and the thickness of silicon nitride anti-reflecting film is 80nm；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is
80nm；
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared；
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 500nm；Included by the group of falling rectangular pyramid
The ratio for the depth and width of falling rectangular pyramid is 0.6: 1.
Embodiment 2
The preparation of double-side solar cell,
Step is as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid knot is formed in silicon chip upper and lower surface
Structure.
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali
Liquid etches.
The acid Woolen-making liquid include 0.35mmol/L silver ion, 100mmol/L copper ion, 4mol/L HF and
2mol/L H2O2；The alkali lye is the KOH solution containing 10% (weight).
The time once etched is 300s, and temperature is 20 DEG C；
The secondarily etched time is 200s, and temperature is 20 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 1100 DEG C, the time
For 80min, diffused sheet resistance is 80 Ω/sq；
Step 3, concentration is used to be cleaned for 8% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex,
Scavenging period 3min, and form mask in front side of silicon wafer；
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 850
DEG C, time 60min, diffused sheet resistance is 80 Ω/sq；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein
The thickness of oxide passivated film is 2nm, and the thickness of silicon nitride anti-reflecting film is 75nm；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is
80nm；
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared；
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 400nm；Included by the group of falling rectangular pyramid
The ratio for the depth and width of falling rectangular pyramid is 0.2: 1.
Embodiment 3
The preparation of double-side solar cell,
Step is as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip
Structure；
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali
Liquid etches.
The acid Woolen-making liquid include 0.1mmol/L silver ion, 20mmol/L copper ion, 2mol/L HF and
0.1mol/L H2O2；The alkali lye is the NaOH solution containing 5% (weight).
The time once etched is 360s, and temperature is 35 DEG C；
The secondarily etched time is 180s, and temperature is 30 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 950 DEG C, and the time is
60min, diffused sheet resistance are 90 Ω/sq；
Step 3, concentration is used to be cleaned for 10% HF solution to above-mentioned silicon chip, to remove silicon chip surface borosilicate glass
Glass, scavenging period 2min, and form mask in front side of silicon wafer；
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 750
DEG C, time 60min, diffused sheet resistance is 90 Ω/sq；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein
The thickness of oxide passivated film is 8nm, and the thickness of silicon nitride anti-reflecting film is 85nm；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is
90nm；
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared；
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 600nm；Included by the group of falling rectangular pyramid
The ratio for the depth and width of falling rectangular pyramid is 1.5: 1.
Embodiment 4
The preparation of double-side solar cell,
Step is as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip
Structure；
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali
Liquid etches.
The acid Woolen-making liquid include 0.55mmol/L silver ion, 120mmol/L copper ion, 2mol/L HF and
4mol/L H2O2；The alkali lye is the KOH solution containing 10% (weight).
The time once etched is 420s, and temperature is 35 DEG C；
The secondarily etched time is 120s, and temperature is 30 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 1000 DEG C, the time
For 60min, diffused sheet resistance is 85 Ω/sq；
Step 3, concentration is used to be cleaned for 6% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex,
Scavenging period 4min, and form mask in front side of silicon wafer；
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 900
DEG C, time 50min, diffused sheet resistance is 75 Ω/sq；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein
The thickness of oxide passivated film is 4nm, and the thickness of silicon nitride anti-reflecting film is 75nm；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is
80nm；
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared；
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 1000nm；Included by the group of falling rectangular pyramid
The depth and width of falling rectangular pyramid ratio be 2: 1.
The solar cell that embodiment 1-4 is obtained carries out measure of merit, determines solar cell properties, concrete outcome is such as
Under：
It can be seen that in the present invention, due to the superposition suede structure of falling rectangular pyramid have it is low reflect, the low compound, characteristic easily filled,
So that battery efficiency is significantly improved.
The preferred embodiment for the present invention is the foregoing described, so it is not limited to the present invention.Those skilled in the art couple
Embodiment disclosed herein can carry out improvement and the change without departing from scope and spirit.
Claims (10)
1. a kind of double-side solar cell, it includes n type single crystal silicon piece, metal electrode, and the silicon chip surface random distribution falls four ribs
Cone group, the group of falling rectangular pyramid of the silicon chip includes two or more rectangular pyramids being at least partly overlapped mutually, in the upper of silicon chip
Lower surface forms p knots and n respectively+Knot, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots, in n+The surface of knot is formed
Silicon nitride layer, difference type metal electrode, sintering on the two sides of silicon chip.
2. double-side solar cell according to claim 1, it is characterised in that the group of falling rectangular pyramid is also included at least partly
The combination of rectangular pyramid and the cuboid of superposition, the cuboid edge are superimposed with the direction for the centerline parallel of falling rectangular pyramid；Enter
One step, at least part superposition falls also to be overlapped mutually between rectangular pyramid and the combination of cuboid.
3. double-side solar cell according to claim 1, it is characterised in that the width of the group of falling rectangular pyramid is 200-
1600nm。
4. double-side solar cell according to claim 1, it is characterised in that four ribs included by the group of falling rectangular pyramid
The ratio for boring depth and width is 0.2-2: 1.
5. a kind of preparation method of double-side solar cell, step are as follows：
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the suede structure of falling rectangular pyramid is formed in the upper and lower surface of silicon chip；
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, p-type layer is formed, as front；
Step 3, above-mentioned silicon chip is cleaned, removes silicon chip surface Pyrex and form mask in front side of silicon wafer；
Step 4, phosphorus diffusion is carried out to the back side of above-mentioned silicon chip, forms the n of heavy doping+Layer；
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed；
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip；
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip；
Step 8, metal electrode is made in the upper and lower surface of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared.
6. preparation method according to claim 5, it is characterised in that in step 2, the diffusion temperature of boron diffusion is 900-
1100 DEG C, preferably 1000 DEG C, preferably time 10-100min, 60min, diffused sheet resistance scope are 40-120 Ω/sq.
7. preparation method according to claim 5, it is characterised in that in step 3, use concentration range as 5%-10%'s
HF solution removes Pyrex, scavenging period 1-5min.
8. preparation method according to claim 5, it is characterised in that phosphorus diffusion in step 4, diffusion temperature 700-900
DEG C, preferably 800 DEG C, preferably time 50-100min, 60min, diffused sheet resistance scope is 50-120 Ω/sq.
9. preparation method according to claim 5, it is characterised in that silicon oxide film thickness is 1nm-20nm in step 6.
10. preparation method according to claim 5, it is characterised in that silicon nitride film thickness is in step 6 and step 7
70nm-100nm。
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