CN107564976A - A kind of double-side cell and preparation method thereof - Google Patents

A kind of double-side cell and preparation method thereof Download PDF

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Publication number
CN107564976A
CN107564976A CN201710726971.8A CN201710726971A CN107564976A CN 107564976 A CN107564976 A CN 107564976A CN 201710726971 A CN201710726971 A CN 201710726971A CN 107564976 A CN107564976 A CN 107564976A
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silicon
silicon chip
rectangular pyramid
double
solar cell
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CN107564976B (en
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赵燕
陈全胜
吴俊桃
陈伟
王燕
刘尧平
徐鑫
杜小龙
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Beijing Puian Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

A kind of double-side cell and preparation method thereof.The present invention relates to a kind of double-side cell of n type single crystal silicon piece and preparation method thereof.To there is the n type single crystal silicon piece for the group of falling rectangular pyramid to be used as substrate with surface random distribution, p knots and n+ knots are formed respectively in upper and lower surface, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots, silicon nitride layer is formed on the surface of n+ knots, type metal electrode, sintering obtain the double-side cell of the present invention respectively on the two sides of monocrystalline silicon piece.

Description

A kind of double-side cell and preparation method thereof
Technical field
The present invention relates to solar cell and preparation method thereof, more particularly to double-side cell and preparation method thereof.
Background technology
Solar cell is the core devices of photovoltaic generating system, and its development level directly determines the developing water of photovoltaic generation Flat, it is that people make great efforts to solve the problems, such as always for a long time to improve solar cell conversion efficiency.Traditional solar cell is to utilize P Type crystalline silicon material, pn-junction is formed in front side of matrix phosphorus diffusion, and deposit antireflective film, back up aluminium paste does back surface field, only just " one side " solar cell of face light.
At present, industrial high-efficiency crystal silicon solar battery mainly includes:The band intrinsic sheet that SANYO GS company develops is heterogeneous The slotting finger back junction back contact solar cell that connection solar cell, Sunpower companies of the U.S. develop.Above-mentioned solar cell has higher Average efficiency, also along with higher cost.
The contradictory relation that double-side solar cell has then been compromised between low cost and high efficiency well.Double-side solar cell knot Structure is simple, completely compatible with the preparation technology of industrialization conventional P-type solar cell, and it is relatively low to prepare cost.Double-side solar cell with The most important difference of conventional solar cell is that its generating electricity on two sides designs, and can receive the incident light of front and back simultaneously, from And improve the conversion efficiency of cell and the power output of component.Double-side solar cell has been international study hotspot.State The research of two-sided crystal silicon cell has been begun to from the seventies outside.The double-side cell for the volume production that succeeded at present has Sunpower Back contacts double-side cell, SANYO HIT batteries and Hitachi p-type double-side cell.Two-sided HIT solar cells both ends difference It is p-type and n-type amorphous silicon membrane, its electrical conductivity is relatively low and has the defects of higher state, thus in order to preferably collect transverse direction Electric current, need to deposit TCO (transparent conductive oxide film) at the both ends of battery.
It is domestic to be started to walk evening for double-side solar cell, but also conduct extensive research.
CN200910034985.9 discloses a kind of making high efficient two-sided P-shaped crystalline silicon sun electricity based on silk-screen printing technique The method in pond, its preparation process are:In the positive phosphorus diffusion of P-type silicon piece, growth of passivation layer and anti-reflection layer, front electrode is made, In the back side boron diffusion of P-type silicon piece or the diffusion of local boron, growth of passivation layer and anti-reflection layer, backplate is made.The invention pair Hitachi double-side cell structures are improved, and it is studied starting point and is passivating structure.
CN201210149129.X is related to a kind of double-side solar cell production technology, and step is as follows:Making herbs into wool has silicon substrate There is matte;The window being consistent with electrode pattern is made in silicon substrate shady face;Heat treatment is carried out to silicon substrate to be made to be formed in window PN junction;Clean silicon substrate;At least two layers of antireflective coating is plated to silicon substrate phototropic face;To matrix silicon shady face coated with antireflection film;Silk Wire mark brush electrode slurry;Sintering obtains metal electrode, completes the making of cell piece.It is studied starting point and is Passivation Treatment, with And the diffusion optimization to phosphorus source, boron source.
CN201310001832.0 is related to a kind of Low-cost n-type double-side solar cell, and the preceding surface of solar cell is boron The boron emitter stage diffuseed to form, deposition has passivation layer and antireflection layer, the back electrode of solar cell back surface above boron emitter stage Contact position is local phosphorus back surface field, and remaining is undoped region, and being deposited above undoped region has passivation layer, and prepared by preceding surface have Electrode before metal, prepared by back surface have metal back electrode.It is studied starting point and is laser doping phosphorus source.
CN201610323511.6 is related to a kind of method for preparing n-type crystal silicon double-side solar cell, as follows:It is right Silicon chip surface carries out making herbs into wool and cleaning;CVD or PVD method the face deposition of heavily doped boron for needing diffused with boron silicon oxide film, Thickness is 20-200nm;CVD or PVD method are in the sull for the face deposition of heavily doped phosphorus that need to spread phosphorus, thickness 20- 200nm;Constant-pressure and high-temperature spreads in pure air atmosphere or oxygen atmosphere, synchronous obtained doped n-type layer and doped p-type layer;Silicon chip The wet chemistry method of two-sided oxide removes and cleaning;The deposition of silicon chip passivation on double surfaces antireflective coating;The two-sided gate line electrode of silicon chip Prepare;The leakproof electric treatment of silicon chip edge.It studies the diffusion that starting point is silicon layer.
In the research of prior art, it is less to focus on influence of the suede structure of monocrystalline silicon piece for battery performance, this hair A person of good sense passes through a series of research, for monocrystalline silicon piece and Woolen-making liquid etc. analyse in depth, as CN201710060545.5, CN201710063015.6, CN201710063021.1, CN201710063022.6, CN201710347235.1 etc., the present invention People thinks that the suede structure of silicon chip is most important for the efficiency for improving double-side cell, by the matching of suede structure, two-sided electricity Pond performance is greatly improved.
The content of the invention
The present invention is in view of the foregoing, there is provided a kind of double-side cell and preparation method thereof, resulting double-side cell efficiency The special suede structure of n type single crystal silicon piece used by height, cost is low, and this mainly has benefited from.
The present inventor etc. has found by the result studied, analysed in depth repeatedly, to have down four ribs with surface random distribution The silicon chip of cone group forms p knots and n respectively as substrate in upper and lower surface+Knot, silicon oxide layer, nitrogen are sequentially formed on the surface of p knots SiClx layer, in n+The surface of knot forms silicon nitride layer, and on the two sides of monocrystalline silicon piece, difference type metal electrode, sintering, thus complete Into the present invention.
That is, the present invention provides following double-side solar cell and preparation method thereof.
Present invention firstly provides a kind of double-side solar cell, and it includes n type single crystal silicon piece, metal electrode, the silicon chip table The face random distribution group of falling rectangular pyramid, what the group of falling rectangular pyramid of the silicon chip included that two or more are at least partly overlapped mutually fall four Pyramid, p knots and n are formed respectively in the upper and lower surface of silicon chip+Knot, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots, In n+The surface of knot forms silicon nitride layer, difference type metal electrode, sintering on the two sides of silicon chip.
It is further preferred that the group of falling rectangular pyramid also includes the group of rectangular pyramid and cuboid of at least partly superposition Close, the cuboid edge is superimposed with the direction for the centerline parallel of falling rectangular pyramid;Further, what described at least part was superimposed falls Also it is overlapped mutually between rectangular pyramid and the combination of cuboid.
It is further preferred that the width of the group of falling rectangular pyramid is 200-1600nm.
It is further preferred that the ratio of the depth and width of falling rectangular pyramid included by the group of falling rectangular pyramid is 0.2-2: 1.
Present invention simultaneously provides the preparation method of double-side solar cell, step are as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip Structure;
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer;
Step 3, above-mentioned silicon chip is cleaned, removes silicon chip surface Pyrex and form mask in front side of silicon wafer;
Step 4, phosphorus diffusion is carried out to the lower surface of above-mentioned silicon chip, forms the n of heavy doping+Layer;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip;
Step 8, metal electrode is made in the upper and lower surface of above-mentioned n type single crystal silicon piece respectively, two-sided sun electricity is prepared Pond;
It is further preferred that in step 1, n type single crystal silicon piece is being carried out to carry out clearly it before metal catalytic etching Wash, cleaned successively using acetone, ethanol and deionized water.
It is further preferred that the etching of metal catalytic described in step 1 is chemical etching.
It is further preferred that the chemical etching process includes:Silicon chip is positioned in acid Woolen-making liquid, once lost Carve, cleaning removes metal ion;Monocrystalline silicon piece after cleaning is placed in alkali lye and carries out secondarily etched, cleans and produces.
0.1-1.0mmol/L silver ion, 20-180mmol/L copper ion, 2- are included in the acid Woolen-making liquid 8mol/L HF and 0.1-8mol/L H2O2
The concentration of silver ion is 0.1,0.2,0.3,0.4,0.49,0.6,0.7,0.8,0.9 in the acid Woolen-making liquid Or 1.0mmol/L;The concentration of copper ion is 20,30,40,50,60,70,80,90,100,110,120,130,140,150, 160th, 170 or 180mmol/L;HF concentration is 2,2.5,3,3.5,4,4.5,5,5.5,6,6.5,7,7.5 or 8mol/L;H2O2 Concentration be 0.1,0.2,0.3,0.4,0.5,0.6,0.8,1,1.25,1.5,1.75,2,2.25,2.5,2.75,3,3.25, 3.5th, 3.75,4,4.25,4.5,4.75,5,5.5,6,6.5,7,7.5 or 8mol/L.
The time once etched is 60,120,180,240,300,360,420,480,540 or 600s, temperature be for 20th, 21,22,23,24,25,26,27,28,29,30,31,32,33,34 or 35 DEG C.
The alkali lye is KOH or NaOH solution containing 1,2,3,4,5,6,7,8,9 or 10% (weight).
The secondarily etched time be 5,10,20,30,40,50,60,70,80,90,100,120,140,160,180, 200th, 250 or 300s, temperature 20,21,22,23,24,25,26,27,28,29 or 30 DEG C.Preferably, it is described secondarily etched Time is more than or equal to 120s.
It is further preferred that in step 2 boron spread, diffusion temperature be 900-1100 DEG C, preferably 1000 DEG C, time 10- 100min, preferably 60min, diffused sheet resistance scope are 40-120 Ω/sq.
It is further preferred that in step 3, concentration range is used to remove Pyrex, cleaning for 5%-10% HF solution Time is 1-5min.
It is further preferred that phosphorus diffusion in step 4, diffusion temperature is 700-900 DEG C, preferably 800 DEG C, time 50- 100min, preferably 60min, diffused sheet resistance scope are 50-120 Ω/sq.
It is further preferred that silicon oxide film thickness is 1nm-20nm in step 6.
It is further preferred that silicon nitride film thickness is 70nm-100nm in step 6 and step 7.
Beneficial effect
The present invention is initially formed the special suede structure of falling rectangular pyramid in n-type single-crystal silicon substrate upper and lower surface, is somebody's turn to do four ribs The matte of wimble structure is the special suede structure that contacts with each other or be superimposed between rectangular pyramid that falls by random distribution.Due to the silicon chip Special suede structure in have different levels light trapping structure, effective contact area of light can be increased, produce more light Raw carrier, while the reasonable transfer of diverse location photo-generated carrier can be realized.
For the n type single crystal silicon substrate, it diffuses to form p layers by boron, forms PN junction with substrate, utilizes back-to-back one side Phosphorus diffusion forms n+ layers in n-type silicon substrate lower surface by phosphorus diffusion, and forming a height with substrate ties.
Compared with prior art, efficient n-type double-side solar cell of the invention, due to being entered in preparation process using mask Row phosphorus diffusion, influenceed so as to not produce cross-diffusion to front when forming back side height and tying;Pass through two in the front of battery Silica adds the passivation of silicon nitride, and it is compound to effectively reduce few son, improves the open-circuit voltage of battery, improves front and back Photoelectric transformation efficiency;Its preparation process is easy, easy to operate, efficiency high, easily realizes scale of mass production, cost-effective.
And the suede structure of falling rectangular pyramid obtained by the present invention, not only should with relatively low reflectivity, what is more important The size of suede structure is submicron order or micron order, and body structure surface is smooth, so as to not increase while light absorbs are increased Extra Carrier recombination, is effectively utilised optical gain.Further, since the architectural characteristic for the uniqueness of falling rectangular pyramid, The slurry in silk-screen printing is preferably filled in the structure, more excellent electrode contact is obtained, effectively reduces The series resistance of battery, improve fill factor, curve factor.In a word, due to the suede structure of falling rectangular pyramid have it is low reflection, it is low compound, easy The characteristic of filling so that N-type double-side cell efficiency is significantly improved in the present invention.
Brief description of the drawings
Fig. 1 is the surface SEM figures of the making herbs into wool silicon chip in the embodiment of the present invention 1.As can be seen from the figure silicon wafer suede structure Include the suede structure of falling rectangular pyramid being at least partly overlapped mutually by two or more, the single suede structure of falling rectangular pyramid, Suede structure (the cuboid edge and the centerline parallel of falling rectangular pyramid of the combination of rectangular pyramid and cuboid of partial stack It is superimposed on direction), and partial stack falls the suede structure that the combination of rectangular pyramid and cuboid is overlapped mutually, and the suede Face structure is based on the suede structure or its suede structure being overlapped mutually of the combination of rectangular pyramid and cuboid of partial stack Want suede structure.
Fig. 2 is the surface SEM figures of the making herbs into wool silicon chip in the embodiment of the present invention 2.
Fig. 3 is the section SEM figures of the making herbs into wool silicon wafer suede structure in the embodiment of the present invention 3, is divided into typical case inside figure centre circle Partial stack fall rectangular pyramid and cuboid combination suede structure, the cuboid along and the centerline parallel of falling rectangular pyramid Direction on be superimposed.
Embodiment
The present invention is described below in more detail to contribute to the understanding of the present invention.
It should be appreciated that the term or word that use in the specification and in the claims are not construed as having The implication limited in dictionary, and be interpreted as on the basis of following principle having and its implication one in the context of the present invention The implication of cause:The concept of term can be limited suitably by inventor for the best illustration to the present invention.
And the suede structure of falling rectangular pyramid obtained by the present invention, not only with relatively low reflectivity, what is more important suede Face physical dimension is submicron order or micron order, and body structure surface is smooth, extra so as to not increase while light absorbs are increased Carrier recombination so that optical gain is effectively utilised.Further, since the architectural characteristic for the uniqueness of falling rectangular pyramid, makes In silk-screen printing, slurry can be preferably filled in the structure, obtained more excellent electrode contact, effectively reduced battery Series resistance, improve fill factor, curve factor.In a word, because the structure of falling rectangular pyramid has low reflection, the low compound, spy that easily fills Property so that N-type monocrystalline double-side cell efficiency is significantly improved in the present invention.
In the present invention, it is described fall rectangular pyramid at the top of refer to the thin of the depths of falling rectangular pyramid, portion more than top It is divided into down the conical section of rectangular pyramid, and the square face opening portion of rectangular pyramid is the bottom of rectangular pyramid.Four ribs One or more of the top of cone in point, line, square, circular, the oval or closed figures that are surrounded by a plurality of curve.
In addition, in the present invention, rectangular pyramid and cuboid of the group of falling rectangular pyramid also including at least partly superposition Combination, the cuboid edge are superimposed with the direction for the centerline parallel of falling rectangular pyramid;It can also regard part or all of rescinded angle as Tetrahedron, preferably have that 2 angles are cut or 4 angles are all cut in the tetrahedron bottom four corners;Further, it is described at least Partial stack falls also to be overlapped mutually between rectangular pyramid and the combination of cuboid.
In the monocrystalline silicon piece texture structure of the present invention, the group of falling rectangular pyramid is random distribution, is not closely arranged Making herbs into wool silicon chip surface is distributed in, and a small amount of flat cone region be present in silicon chip surface;It is main in silicon chip surface suede structure in addition For two, three, four, five or the suede structure of multiple superpositions of falling rectangular pyramid;In any case, in the suede structure It is also possible to be dispersed with the suede structure of a small amount of single rectangular pyramid.
Due to the matte of the above-mentioned structure of falling rectangular pyramid be by random distribution fall rectangular pyramid between contact with each other or be superimposed after The special suede structure formed, therefore there is the light trapping structure of different levels on above-mentioned making herbs into wool silicon chip surface, add light has Contact area is imitated, produces more photo-generated carriers, while the reasonable transfer of diverse location photo-generated carrier can be realized.
The preparation of the double-side solar cell of embodiment 1,
Step is as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip Structure;
Monocrystalline silicon piece is used into HF and HNO first3In mixed solution 3min is handled at 8 ± 1 DEG C;
Metal catalytic etching silicon wafer is used afterwards, and the suede structure of falling rectangular pyramid is formed in silicon chip surface;The metal catalytic Etch and etched for multiple etching, first time etching for acid Woolen-making liquid, etch etched for alkali lye for the second time.
Wherein, 0.1mmol/L silver ion, 100mmol/L copper ion, 5.6mol/L are included in the acid Woolen-making liquid HF and 1.0mol/L H2O2.The time once etched is 540s, and temperature is 27 DEG C.
Monocrystalline silicon piece after etch cleaner is placed in alkali lye and carries out secondarily etched, cleans and produces.Wherein described alkali Liquid is containing 2% NaOH solution;The secondarily etched time is 180s, and temperature is 25 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 900 DEG C, and the time is 100min, diffused sheet resistance are 75 Ω/sq;
Step 3, concentration is used to be cleaned for 5% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex, Scavenging period 5min, and form mask in front side of silicon wafer;
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 800 DEG C, time 80min, diffused sheet resistance is 75 Ω/sq;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein The thickness of oxide passivated film is 5nm, and the thickness of silicon nitride anti-reflecting film is 80nm;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is 80nm;
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared;
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 500nm;Included by the group of falling rectangular pyramid The ratio for the depth and width of falling rectangular pyramid is 0.6: 1.
Embodiment 2
The preparation of double-side solar cell,
Step is as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid knot is formed in silicon chip upper and lower surface Structure.
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali Liquid etches.
The acid Woolen-making liquid include 0.35mmol/L silver ion, 100mmol/L copper ion, 4mol/L HF and 2mol/L H2O2;The alkali lye is the KOH solution containing 10% (weight).
The time once etched is 300s, and temperature is 20 DEG C;
The secondarily etched time is 200s, and temperature is 20 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 1100 DEG C, the time For 80min, diffused sheet resistance is 80 Ω/sq;
Step 3, concentration is used to be cleaned for 8% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex, Scavenging period 3min, and form mask in front side of silicon wafer;
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 850 DEG C, time 60min, diffused sheet resistance is 80 Ω/sq;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein The thickness of oxide passivated film is 2nm, and the thickness of silicon nitride anti-reflecting film is 75nm;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is 80nm;
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared;
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 400nm;Included by the group of falling rectangular pyramid The ratio for the depth and width of falling rectangular pyramid is 0.2: 1.
Embodiment 3
The preparation of double-side solar cell,
Step is as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip Structure;
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali Liquid etches.
The acid Woolen-making liquid include 0.1mmol/L silver ion, 20mmol/L copper ion, 2mol/L HF and 0.1mol/L H2O2;The alkali lye is the NaOH solution containing 5% (weight).
The time once etched is 360s, and temperature is 35 DEG C;
The secondarily etched time is 180s, and temperature is 30 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 950 DEG C, and the time is 60min, diffused sheet resistance are 90 Ω/sq;
Step 3, concentration is used to be cleaned for 10% HF solution to above-mentioned silicon chip, to remove silicon chip surface borosilicate glass Glass, scavenging period 2min, and form mask in front side of silicon wafer;
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 750 DEG C, time 60min, diffused sheet resistance is 90 Ω/sq;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein The thickness of oxide passivated film is 8nm, and the thickness of silicon nitride anti-reflecting film is 85nm;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is 90nm;
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared;
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 600nm;Included by the group of falling rectangular pyramid The ratio for the depth and width of falling rectangular pyramid is 1.5: 1.
Embodiment 4
The preparation of double-side solar cell,
Step is as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the matte of falling rectangular pyramid is formed in the upper and lower surface of silicon chip Structure;
The metal catalytic etching is multiple etching, and etching etches for acid Woolen-making liquid for the first time, and second of etching is alkali Liquid etches.
The acid Woolen-making liquid include 0.55mmol/L silver ion, 120mmol/L copper ion, 2mol/L HF and 4mol/L H2O2;The alkali lye is the KOH solution containing 10% (weight).
The time once etched is 420s, and temperature is 35 DEG C;
The secondarily etched time is 120s, and temperature is 30 DEG C.
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, forms p-type layer, diffusion temperature is 1000 DEG C, the time For 60min, diffused sheet resistance is 85 Ω/sq;
Step 3, concentration is used to be cleaned for 6% HF solution to above-mentioned silicon chip, to remove silicon chip surface Pyrex, Scavenging period 4min, and form mask in front side of silicon wafer;
Step 4, gained silicon chip is subjected to one side phosphorus diffusion back-to-back, forms the n+ layers of heavy doping, diffusion temperature 900 DEG C, time 50min, diffused sheet resistance is 75 Ω/sq;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip, wherein The thickness of oxide passivated film is 4nm, and the thickness of silicon nitride anti-reflecting film is 75nm;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip, the thickness of silicon nitride anti-reflecting film is 80nm;
Step 8, metal electrode is made in the positive and negative of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared;
Gained double-side solar cell, the width of the group of falling rectangular pyramid of silicon chip is 1000nm;Included by the group of falling rectangular pyramid The depth and width of falling rectangular pyramid ratio be 2: 1.
The solar cell that embodiment 1-4 is obtained carries out measure of merit, determines solar cell properties, concrete outcome is such as Under:
It can be seen that in the present invention, due to the superposition suede structure of falling rectangular pyramid have it is low reflect, the low compound, characteristic easily filled, So that battery efficiency is significantly improved.
The preferred embodiment for the present invention is the foregoing described, so it is not limited to the present invention.Those skilled in the art couple Embodiment disclosed herein can carry out improvement and the change without departing from scope and spirit.

Claims (10)

1. a kind of double-side solar cell, it includes n type single crystal silicon piece, metal electrode, and the silicon chip surface random distribution falls four ribs Cone group, the group of falling rectangular pyramid of the silicon chip includes two or more rectangular pyramids being at least partly overlapped mutually, in the upper of silicon chip Lower surface forms p knots and n respectively+Knot, silicon oxide layer, silicon nitride layer are sequentially formed on the surface of p knots, in n+The surface of knot is formed Silicon nitride layer, difference type metal electrode, sintering on the two sides of silicon chip.
2. double-side solar cell according to claim 1, it is characterised in that the group of falling rectangular pyramid is also included at least partly The combination of rectangular pyramid and the cuboid of superposition, the cuboid edge are superimposed with the direction for the centerline parallel of falling rectangular pyramid;Enter One step, at least part superposition falls also to be overlapped mutually between rectangular pyramid and the combination of cuboid.
3. double-side solar cell according to claim 1, it is characterised in that the width of the group of falling rectangular pyramid is 200- 1600nm。
4. double-side solar cell according to claim 1, it is characterised in that four ribs included by the group of falling rectangular pyramid The ratio for boring depth and width is 0.2-2: 1.
5. a kind of preparation method of double-side solar cell, step are as follows:
Step 1, metal catalytic etching is carried out to n type single crystal silicon piece, the suede structure of falling rectangular pyramid is formed in the upper and lower surface of silicon chip;
Step 2, boron diffusion is carried out to the silicon chip upper surface after making herbs into wool, p-type layer is formed, as front;
Step 3, above-mentioned silicon chip is cleaned, removes silicon chip surface Pyrex and form mask in front side of silicon wafer;
Step 4, phosphorus diffusion is carried out to the back side of above-mentioned silicon chip, forms the n of heavy doping+Layer;
Step 5, the mask of flash trimming knot, phosphorosilicate glass and front side of silicon wafer is removed;
Step 6, oxide passivated film and silicon nitride anti-reflecting film are sequentially depositing using PECVD in the front of silicon chip;
Step 7, PECVD deposited silicon nitride antireflective coatings are utilized at the back side of silicon chip;
Step 8, metal electrode is made in the upper and lower surface of above-mentioned n type single crystal silicon piece respectively, double-side solar cell is prepared.
6. preparation method according to claim 5, it is characterised in that in step 2, the diffusion temperature of boron diffusion is 900- 1100 DEG C, preferably 1000 DEG C, preferably time 10-100min, 60min, diffused sheet resistance scope are 40-120 Ω/sq.
7. preparation method according to claim 5, it is characterised in that in step 3, use concentration range as 5%-10%'s HF solution removes Pyrex, scavenging period 1-5min.
8. preparation method according to claim 5, it is characterised in that phosphorus diffusion in step 4, diffusion temperature 700-900 DEG C, preferably 800 DEG C, preferably time 50-100min, 60min, diffused sheet resistance scope is 50-120 Ω/sq.
9. preparation method according to claim 5, it is characterised in that silicon oxide film thickness is 1nm-20nm in step 6.
10. preparation method according to claim 5, it is characterised in that silicon nitride film thickness is in step 6 and step 7 70nm-100nm。
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