CN107564960A - 一种GaNFinFETHEMT器件 - Google Patents

一种GaNFinFETHEMT器件 Download PDF

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CN107564960A
CN107564960A CN201710579176.0A CN201710579176A CN107564960A CN 107564960 A CN107564960 A CN 107564960A CN 201710579176 A CN201710579176 A CN 201710579176A CN 107564960 A CN107564960 A CN 107564960A
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finfet
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倪炜江
袁俊
李百泉
张敬伟
李明山
孙安信
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BEIJING HUAJIN CHUANGWEI ELECTRONICS Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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Abstract

本发明公开了一种GaN FinFET HEMT器件，所述GaN FinFET HEMT器件的栅结构采用了三维立体FinFET栅结构，即芯片有源区表面具有规则有序的台面和凹槽，在台面的顶部、底部和侧壁区域都具有栅结构，并且在这三个区域也都具有源、漏极。本发明利用比较成熟的衬底台面刻蚀技术，通过在衬底上规则有序的刻蚀台面结构，在台面结构表面上生长GaN外延层，再进行器件制作工艺，形成三维立体的FinFET栅结构。本发明可以有效增加单位面积的栅宽，突破当前二维栅结构下的电流密度的限制。

Description

一种GaNFinFETHEMT器件
技术领域
本发明属于半导体器件技术领域，具体涉及一种GaN FinFET HEMT器件。
背景技术
GaN作为第三代宽禁带半导体材料的典型代表之一，与传统的半导体材料 Si、GaAs相比，具有禁带宽度宽、击穿电场大、电子饱和漂移速度高、介电常数小以及良好的化学稳定性等特点。特别是基于GaN材料的AlGaN/GaN异质结高电子迁移率晶体管(HEMT)结构具有更高的电子迁移率(高于1800cm2V-1s-1) 和二维电子气(2DEG)面密度(约1013cm-2)，使得基于GaN材料器件在射频领域和电力电子领域都具有非常明显的优势。
随着技术的发展，GaN HEMT器件的电流密度逐步得到了提升，主要是通过增加单位栅宽的电流和单位面积的栅宽来实现，即单栅宽电流密度和单位面积的栅宽。对于单栅宽电流密度，主要是通过减小沟道电阻，特别是栅控制沟道的电阻来实现，如优化、减少栅长，或则减少栅界面态密度提高沟道电子浓度和迁移率。而对于提高单位面积的栅宽方法，主要是通过优化减少原胞的尺寸，如优化源栅、栅漏之间的间隔来实现。
发明内容
针对现有技术中存在的问题，本发明的目的在于提供一种GaN FinFET HEMT 器件，其可以有效增加单位面积的栅宽，突破当前二维栅结构下的电流密度的限制。
为实现上述目的，本发明采用以下技术方案：
一种GaN FinFET HEMT器件，所述GaN FinFET HEMT器件的栅结构采用了三维立体FinFET栅结构，即芯片有源区表面具有规则有序的台面和凹槽，在台面的顶部、底部和侧壁区域都具有栅结构，并且在这三个区域也都具有源、漏极。
进一步，所述台面为垂直台面或倾斜台面。
进一步，所述台面的深度要大于总的外延层的厚度；总的外延层包括GaN 缓冲层和GaN沟道层。
进一步，所述GaN FinFET HEMT器件包括MES HEMT、MOS沟道HEMT和 MIS-HEMT。
本发明具有以下有益技术效果：
本发明利用比较成熟的衬底台面刻蚀技术，通过在衬底上规则有序的刻蚀台面结构，在台面结构表面上生长GaN外延层，再进行器件制作工艺，形成三维立体的FinFET栅结构。本发明可以有效增加单位面积的栅宽，突破当前二维栅结构下的电流密度的限制。
本发明可应用于各种不同的GaN HEMT截面结构的器件，通过改变垂直于截面方向的栅的结构，采用三维立体的FinFET栅结构，有效的增加了器件的总栅宽和单位芯片面积的栅宽。
附图说明
图1为MES HEMT器件结构的截面示意图；
图2为MOS沟道HEMT器件结构的截面示意图；
图3为凹槽结构HEMT器件结构的截面示意图；
图4为现有技术中平面栅结构的GaN HEMT器件；
图5为本发明三维立体的FinFET栅结构HEMT器件的结构示意图；
图6为图5中B-B’的截面结构示意图。
具体实施方式
下面，参考附图，对本发明进行更全面的说明，附图中示出了本发明的示例性实施例。然而，本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。而是，提供这些实施例，从而使本发明全面和完整，并将本发明的范围完全地传达给本领域的普通技术人员。
如图1-3所示，GaN HEMT器件有各种不同的结构，如MES HEMT、MOS沟道 HEMT、MIS-HEMT等多种，其均包括衬底1、AlN成核层2、GaN缓冲层3、GaN 沟道层4、AlN插入层5、AlGaN势垒层6、GaN帽层7、漏极8、源极9和栅极10，本发明可应用于各种不同的GaN HEMT截面结构的器件，通过改变垂直于截面方向的栅的结构，采用三维立体的FinFET栅结构，有效的增加了器件的总栅宽和单位芯片面积的栅宽。
如图4所示，现有技术中的GaN HEMT器件，是一种平面的栅结构，器件的所有栅沟道分布在源漏的同一个平面上，总的栅宽受到了芯片面积及源漏区域的限制。
如图5-6所示，本发明提供了一种GaN FinFET HEMT器件，该GaN FinFET HEMT器件的栅结构采用了三维立体FinFET栅结构，即芯片有源区表面具有规则有序的台面和凹槽，在台面的顶部、底部和侧壁区域都具有栅结构，并且在这三个区域也都具有源、漏极，有效的增加了在相同芯片面积下的栅宽。相比于平面栅结构，新发明结构增加了侧壁部分的栅宽，具体的增加比例与台面的深宽比有关，栅宽的增加比例可由以下公式得到：
2*Ls/(Wm+Wt)
Ls为台面侧壁长度，Wm为台面宽度，Wt为凹槽的宽度。如对于深宽比为1 的垂直台面，台面的宽度等于凹槽的宽度，同时等于深度，因此总的栅宽相比于平面结构的器件增加1倍。本发明中的台面可以是垂直台面，也可以是倾斜台面。
台面的深度要大于总的外延层的厚度；总的外延层包括GaN缓冲层和GaN 沟道层；这样生长完外延材料后就具有明显的侧壁长度。
本发明的GaN FinFET HEMT器件制作方法与常规器件类似。首先在衬底材料上通过图形化的掩膜刻蚀台面结构。刻蚀完后再根据不同的衬底材料进行不同的刻蚀后处理工艺，如对Si、SiC可以采用不用温度的高温退火和牺牲氧化方法，改善衬底的粗糙度和均匀性。
然后，在有台面微结构的衬底上，生长GaN的外延层。一般地，先生长AlN 成核层，再生长GaN缓冲层，改善衬底和外延层之间的晶格失配，以便生长高质量的外延层。然后再生长GaN外延层，一般为无故意掺杂型。再生长AlN插入层，AlGaN势垒层，及GaN帽层。由于GaN/AlGaN的异质结结构，在GaN外延层的表面将产生高浓度的二维电子气11。
接下来器件的制作方法与对应的平面栅结构器件的方法一致。
本发明的GaN器件适用于各种衬底，如SiC、Si、GaN、Al2O3等，器件结构和制作方法是类似的。并且本发明的GaN HEMT结构可以是射频(RF)器件，也可以是电力电子器件。
上面所述只是为了说明本发明，应该理解为本发明并不局限于以上实施例，符合本发明思想的各种变通形式均在本发明的保护范围之内。

Claims (4)

1.一种GaN FinFET HEMT器件，其特征在于，所述GaN FinFET HEMT器件的栅结构采用了三维立体FinFET栅结构，即芯片有源区表面具有规则有序的台面和凹槽，在台面的顶部、底部和侧壁区域都具有栅结构，并且在这三个区域也都具有源、漏极。
2.根据权利要求1所述的GaN FinFET HEMT器件，其特征在于，所述台面为垂直台面或倾斜台面。
3.根据权利要求1所述的GaN FinFET HEMT器件，其特征在于，所述台面的深度要大于总的外延层的厚度；总的外延层包括GaN缓冲层和GaN沟道层。
4.根据权利要求1所述的GaN FinFET HEMT器件，其特征在于，所述GaN FinFET HEMT器件包括MES HEMT、MOS沟道HEMT和MIS-HEMT。
CN201710579176.0A 2017-07-17 2017-07-17 一种GaNFinFETHEMT器件 Pending CN107564960A (zh)

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CN111699560A (zh) * 2018-02-06 2020-09-22 日产自动车株式会社 半导体装置
CN111710650A (zh) * 2020-08-20 2020-09-25 浙江集迈科微电子有限公司 基于双沟道栅的GaN器件及其制备方法

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Application publication date: 20180109