CN107546094B - Monitor the plasma processing apparatus and method of plasma process processing procedure - Google Patents
Monitor the plasma processing apparatus and method of plasma process processing procedure Download PDFInfo
- Publication number
- CN107546094B CN107546094B CN201610487877.7A CN201610487877A CN107546094B CN 107546094 B CN107546094 B CN 107546094B CN 201610487877 A CN201610487877 A CN 201610487877A CN 107546094 B CN107546094 B CN 107546094B
- Authority
- CN
- China
- Prior art keywords
- signal
- pulse
- optical signal
- incident light
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a kind of plasma processing apparatus and method for monitoring manufacturing process, one monitoring device of plasm reaction cavity and monitoring Substrate treatment processing procedure including a processing substrate, the monitoring device includes an incident light source, emits pulse incident light for the substrate surface into the reaction chamber；One spectrometer, for acquiring the optical signal in the reaction chamber；One data processing equipment, for receive the spectrometer collection to optical signal and period modulated signal identical with the pulse incident photoperiod is provided, the modulated signal has positive and negative both direction, and the modulated signal is cancelled out each other after being superimposed with the product of the background light signal in each period；The pulse-echo optical signal and the product of the modulated signal are not zero；The terminal of the plasma process processing procedure is calculated using the pulse-echo optical signal of acquisition for the data processing equipment.
Description
Technical field
The present invention relates to plasma process processing technology fields more particularly to a kind of plasma processing processing procedure to carry out
The technical field of monitoring.
Background technique
Plasma treatment technique is widely used in semiconductor fabrication process.Semiconductor chip is being deposited or is being carved
During erosion, need to carry out close supervision to manufacturing process, to ensure that depositing operation or etching technics result are well controlled.
A kind of currently used etching technics control method is optical emission spectroscopy (OES).Atom or molecule quilt in plasma
After electron excitation to excitation state, the light of specific wavelength can be launched during returning to another energy state.Not homoatomic or
The wavelength for the light wave that person's molecule is excited is different, and the variation of the light intensity of light wave reflects atom or molecule in plasma
Concentration variation.OES is will to reflect plasma etching change in process, form closely related substance with plasma chemistry
The characteristic spectral line (OES characteristic spectral line) of plasma extract, pass through the change of its characteristic spectral line signal strength of real-time detection
Change, to provide the information of the response situation in plasma etch process, the limitation of this method is to monitor film
State after the completion of etching is only finished when a kind of destination layer being etched etches, plasma etching to next layer of destination layer
When, the characteristic spectral line of corresponding plasma just has significant change, therefore this method is only used for the terminal prison of etching technics
It surveys.
With in integrated circuit device integration density and complexity be continuously increased, to the stringent of semiconductor processes
Control is just particularly important.For the polysilicon gate etching technique of sub- profound and subtle rice, since the thickness of grid oxide layer has become
Must be very thin, how accurately to control plasma etch process is the technical challenge that people face.It partly leads at present
Body industrially used in High Density Plasma Etching System, such as the source inductively coupled plasma body (ICP), capacitiveiy coupled plasma
The body source (CCP) and the source electron spin resonance plasma (ECR) etc..Its generated plasma etching with higher
Rate, if technology controlling and process is unreasonable, the overetch of appearance is easy to will cause the damage of lower layer of material, in turn results in device
The failure of part.It therefore must be to some parameters in etching process, such as the chemical gas, etch period, etch rate of etching
And the parameters such as etching selection ratio carry out strict control.In addition, the subtle change of etching machine state, such as gas stream in reaction cavity
Amount, temperature, the reflux state of gas or the difference between chip between batches, can all influence the control to etching parameters
System.The situation of change of various parameters in etching process must be thus monitored, with the consistency for ensuring to etch in etching process.And it does
Relating to end-point method (IEP) is exactly to realize and monitored in real time and designed to etching process.
Interferometric endpoint method (IEP) is an incident optical signal to surface of semiconductor chip, and incident optical signal is through semiconductor chip
The information that substrate membrane thickness change is carried after transmitting, by being measured to the wavelength of optical signal after reflection, and according to survey
It measures result and carries out analytical calculation, it can be deduced that actual etch rate realizes the etching process of real time monitoring substrate membrane.But
During to spectrum monitoring, specific wavelength that atom or molecule in plasma can be emitted after electron excitation to excitation state
Optical signal always exist, and intensity is larger, and the light signal strength that even plasma issues sometimes can be more than incident optical signal
Intensity interferes the reading to the incident optical signal after reflection so that measurement incident optical signal becomes difficult.
Summary of the invention
In order to solve the above-mentioned technical problem, the invention discloses it is a kind of monitor manufacturing process plasma processing apparatus,
The monitoring device of reaction chamber and monitoring Substrate treatment processing procedure including a processing substrate, the monitoring device include:
One incident light source emits pulse incident light for the substrate surface into the reaction chamber；
One spectrometer, for acquiring the optical signal in the reaction chamber, the optical signal includes that the pulse incident light exists
The background light signal that the pulse-echo optical signal and processing thereof plasma of substrate surface issue；
One data processing equipment, for receive the spectrometer collection to optical signal and the period be provided enter with the pulse
Photoperiod identical modulated signal is penetrated, the modulated signal has positive and negative both direction, and the modulated signal in each period
It cancels out each other after being superimposed with the product of the background light signal；
The pulse-echo optical signal and the product of the modulated signal are not zero；
The plasma process processing procedure is calculated using the pulse-echo optical signal of acquisition in the data processing equipment
Terminal.
Preferably, the signal that the modulated signal signal integration area that direction is positive in one cycle and direction are negative
Integral area is identical.
Preferably, the product of the pulse-echo optical signal and the modulated signal is greater than 0.
Preferably, the modulated signal is sinusoidal signal or cosine signal.
Preferably, in each period, the wave crest phase of the pulse-echo optical signal and the sinusoidal signal or cosine signal
It is corresponding.
Preferably, in each period, the trough phase of the pulse-echo optical signal and the sinusoidal signal or cosine signal
It is corresponding.
Preferably, the modulated signal is low and high level pulse-period signal, and the high level is greater than zero, the low level
Less than zero, the corresponding region area of high level region area corresponding with low level is equal in magnitude in one period.
Preferably, the amplitude of the modulated signal is more than or equal to the light intensity numerical value of the pulse-echo optical signal.
Preferably, the incident light that the incident light source issues is Quan Guangpu.
Preferably, the incident light source is flash lamp.
Preferably, the spectrometer sends pulse triggering signal to the incident light source, to control the incident light source hair
Penetrate the period of pulse incident light.
Further, the invention also discloses a kind of method for monitoring plasma-treating technology, the method is in first-class
It is carried out in gas ions processing unit, described method includes following steps:
It places the substrates in the reaction chamber of the plasma processing apparatus, plasma process is carried out to the substrate
Processing；
Emit a pulse incident light to the substrate, the pulse incident light is reflected in substrate surface；
The optical signal is simultaneously transported to a data processing by the optical signal that issues in the reaction chamber described in a spectrometer collection
Device, the optical signal include plasma reasons for its use light in the pulse-echo optical signal and reaction chamber of substrate surface reflection
Signal；
The data processing equipment provides a modulated signal identical with the pulse incident photoperiod, and believes the modulation
Number and spectrometer collection optical signal carry out multiplying；
The modulated signal be set as having positive negative direction and with the product of the background light signal within each period phase
Mutually offset；
The position of the modulated signal Yu the pulse-echo optical signal is set, so that the product of the two is not zero；
The terminal meter of plasma-treating technology is carried out using the pulse-echo optical signal information after elimination background light signal
It calculates.
Preferably, the data processing equipment adjusts the position of the modulated signal Yu the pulse-echo optical signal, makes
The product for obtaining the two is greater than zero.
Preferably, the modulated signal that the data processing equipment provides is sinusoidal signal or cosine signal.
Preferably, the data processing equipment controls the pulse incident optical signal and the sinusoidal modulation signal or cosine
The wave crest or trough of modulated signal are corresponding.
Preferably, the amplitude of the modulated signal is more than or equal to the intensity of the pulse-echo optical signal.
Preferably, the incident optical signal is full spectral signal.
Preferably, the modulated signal is low and high level pulse-period signal, and the high level is greater than zero, the low level
Less than zero, the corresponding region area of high level region area corresponding with low level is equal in magnitude in one period.
Preferably, the spectrometer sends a pulse triggering signal to the incident light source, controls the incident light source
Pulse period.
Preferably, the data processing equipment is a computer system.
The present invention has the advantages that one modulation of background light signal and the application of pulse-echo optical signal arrived to spectrometer collection
Signal, the period of the modulated signal is identical as the period of the pulse-echo optical signal, and the modulated signal is in a week
The signal integration area that direction is positive in phase is identical as the signal integration area that direction is negative.Since background light signal is relatively steady
It is fixed, change in one cycle it is almost nil, therefore when being overlapped to the product of background light signal and modulated signal, due to back
Scape optical signal is identical as the product size of modulated signal, contrary, and therefore, superimposed numerical value is zero, to eliminate back
The interference of scape optical signal, data processing equipment 114 controls pulse-echo light and the product of modulated signal is not zero, due to a tune
Only there is the very of short duration time in signal period internal reflection optical signal processed, will not be right even if being overlapped in one cycle
Reflected light signal impacts, particularly, when the amplitude that modulated signal is arranged is greater than the light intensity of reflected light signal, the modulation
Signal can also amplify the light intensity of reflected light signal, and the utilization reflected light signal for enabling data processing equipment more accurate is to quarter
Erosion terminal is calculated.
Detailed description of the invention
It is described in detail referring to the following drawings to made by non-limiting embodiment by reading, other spies of the invention
Sign, objects and advantages will become more apparent upon:
Fig. 1 shows a kind of plasma processing apparatus structural schematic diagram that interferometric endpoint monitoring device is arranged；
Fig. 2 shows reflected light signal, background light signal and modulated signal schematic diagrames；
Fig. 3 shows the reflected light signal, background light signal and modulated signal schematic diagram of another embodiment；
Fig. 4 shows modulated signal and reflected light signal, background light signal schematic diagram with amplification factor；
Fig. 5 shows the plasma processing apparatus structural schematic diagram of another setting interferometric endpoint monitoring device.
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.It should be noted that attached drawing is all made of very simplified form, using non-accurate ratio
Example, and only conveniently, clearly to achieve the purpose that aid illustration the present embodiment.
Fig. 1 shows a kind of plasma processing apparatus structural schematic diagram that interferometric endpoint monitoring device is arranged.In Fig. 1, etc.
Semiconductor chip 10 is placed inside gas ions processing unit 100, is passed through inside the reaction chamber of plasma processing apparatus 100 anti-
Answer gas to be dissociated into plasma 111 under the action of being applied to the radio-frequency power of plasma processing apparatus 100, it is described it is equal from
Daughter performs etching substrate 10.The method for generating plasma can be capacitive coupling, inductive coupling mode or electricity
Sub- convolution mode, therefore the present invention is suitable for the plasma processing apparatus of various ways.Several layers are generally included on substrate 10
Film to be etched etches different films and needs to use different reaction gas and etch process parameters.Plasma is etching
Reaction product can issue the optical signal of different wave length in different thin-film process, these optical signals are being etched as background light signal
Process is continued for existing.
In the device and method of interferometric endpoint method (IEP) monitor plasma processes disclosed by the invention, one is dry
It relates to the setting of endpoint monitoring device and carries out endpoint monitoring for plasma processing unit 100.The interferometric endpoint monitoring device
Including an incident light source 102 and a spectrometer 104, the top of plasma processing apparatus 100 is arranged in an optical signal entrance 103
On wall, the optical signal to allow incident light source 102 to emit enters plasma processing apparatus and is incident on substrate surface, and allows
Optical signal after reflection enters the spectrometer 104 being arranged in outside plasma processing apparatus 100.Concrete operating principle are as follows: incident
After light source 102 emits incident optical signal to the film surface that is etched, light and penetrate quilt after the film that film upper surface is reflected
The light of subsurface material reflection interferes.It is different since film thickness determines the optical path difference of interfere two light
Optical path difference will form the interference fringe of interleaved again.Therefore, with the progress of etching technics, film be constantly etched it is thinned,
Under conditions of Δ d meets following equation, available interference is reinforced:
Δ d=λ/2n
In formula, λ is the wavelength of incident optical signal, and n is the refractive index of thin-film material, and Δ d is the change of monitored film thickness
Change, it is every a Δ d variation occur, then the maximum value of a light intensity can be shown on spectrometer 104.In this way with film thickness
It is constantly thinned, will form many sinuous signal curves.Under the premise of known incident wavelength of optical signal and refractive index,
The thickness change Δ d of monitored film, the sine wave signal curve received according to spectrometer can be calculated, it can be deduced that
There is the period that an interference is reinforced, using the monitoring film thickness changes delta d and generate a cycle of the thickness change
Actual etch rate in etching technics can be calculated.It can be calculated under the premise of etching known to film general thickness
Reach the time that etching terminal needs.
In monitoring process, since the background light signal intensity that plasma issues in reaction chamber is larger, even meeting sometimes
More than the light signal strength that incident light reflects on substrate membrane, since incident light and background light signal are all full spectrum light letter
Number, when the optical signal of certain wavelength of spectrometer collection is arranged, the optical signal that spectrometer collection arrives is that the reflected light of the wavelength is believed
Number and the sum of background light signal, the noise that background light signal generates can be to the meter for carrying out above-mentioned etching terminal using reflected light signal
Calculation brings difficulty, can not carry out operation to etch rate as described above, in order to avoid spectrometer is receiving substrate membrane reflection
It is influenced when optical signal by the background light signal that plasma issues, guarantees that spectrometer can accurately read incident optical signal,
The present invention needs to exclude the interference of background light signal.
In order to eliminate the interference of background light signal, interferometric endpoint monitoring device provided by the invention further includes data processing dress
Set 114, the sum of collected background light signal and reflected light signal are transported to data processing equipment 114 by spectrometer, at data
It manages device 114 and a modulated signal is applied to the sum of background light signal and reflected light signal, eliminate bias light using the modulated signal
Signal.
Fig. 2 shows the modulated signals that the reflected light signal of spectrometer collection, background light signal and data processing equipment apply
Schematic diagram.It is a pulse incident light source that the present invention, which selects setting incident light source 102, can be sent out with certain frequency into reaction chamber
The high energy pulse light of short duration is penetrated, is such as shone within each pulse period with the flash lamp of full spectrum, flash lamp
Time is extremely short, usually Microsecond grade, almost can emit instantaneous optical signal on a time point, therefore, signal shown in Fig. 2
In figure, pulse incident optical signal is shown as to have the perpendicular of certain intervals in the pulse-echo optical signal that substrate surface reflection generates
Straightway, the length of vertical line segment illustrate the intensity of pulse-echo optical signal, and the time interval pulse of two vertical line segments enters
Penetrate the period t of light0.And the background light signal that plasma issues always exists during entire plasma process, and light intensity
Variation range is smaller, is expressed as an approximate horizontal smoothed curve.Pulse-echo optical signal in spectrometer collection reaction chamber
And background light signal, and collected optical signal is transported to data processing equipment 114, data processing equipment 114 applies one and adjusts
Signal processed eliminates the interference of background light signal using the modulated signal to the background light signal and reflected light signal.
The modulated signal is with positive negative direction and periodic signal identical with the incident optical signal frequency, modulation letter
The key that number can eliminate background light signal is that modulated signal corresponding size of positive negative direction within each period is equal.
As shown by the dash line in figure 2, the modulated signal can be sinusoidal signal or cosine signal.Data processing equipment 114 is by modulated signal
The background light signal and pulse-echo optical signal arrived with spectrometer collection carries out multiplying, since background light signal is when adjacent
Between in section Strength Changes it is little, in one cycle can be almost identical, when applying a sinusoidal signal or cosine signal to it,
Equal with minus numerical value greater than zero numerical value in one cycle due to sinusoidal signal or cosine signal, being equivalent to will carry on the back
The light intensity numerical value of scape optical signal is that the half half that is positive is negative in each period internal modulation, therefore, when to the number in each period
Value is overlapped operation, with cancelling out each other after positive and negative light intensity numerical value superposition, to eliminate background light signal.Pulse-echo
The high energy pulse light of optical signals then short duration, light intensity is not in the only very short time in a light period
Zero, as long as control the modulated signal and pulse-echo light progress multiplying, each period internal modulation signal is 0
Position is not corresponding with reflected light signal, and the reflected light signal intensity with certain numerical value can be obtained.Due to background light signal
Through being eliminated, to the information for having to reflected light signal after multiplying folded structures in data processing equipment 114, and then accordingly
Perform etching the endpoint calculation of technique.In order to which the reflected light signal intensity numerical value for guaranteeing with obtaining after modulated signal operation is larger,
In order to the calculating to etching terminal, pulse-echo optical signal and sinusoidal signal or cosine signal are close to wave crest in each period
Position is corresponding, it is preferred that the position of reflected light signal is corresponding with the crest location of sinusoidal signal or cosine signal.
Modulated signal of the present invention can also have other than the sinusoidal signal that above-described embodiment describes and cosine signal
Various other forms, as long as can guarantee that modulated signal has positive negative direction and in one cycle to numerical value after positive and negative direction integral
It is identical both to realize the object of the invention.In the embodiment shown in fig. 3, a kind of pulse period letter with low and high level is disclosed
Number, as seen from the figure, half period that is positive one half period of modulated signal is negative and positive and negative amplitude is identical, therefore, will modulate
When the product of signal and background light signal is overlapped, the stack result in each period is zero, to realize to bias light
The denoising of signal.When carrying out multiplying, data processing equipment 114 avoids rising edge or failing edge and the pulse of modulated signal
Reflected light signal position is corresponding, and then obtains the information of only reflected light signal, to perform etching the calculating of terminal accordingly.
Modulated signal can also be to the reflected light signal needed for calculating other than it can eliminate background light signal in the present invention
Strength values amplify, and the range value by the way that modulated signal is arranged is greater than the strength values of reflected light signal, and reflection is arranged
Optical signal is corresponding with the crest location of modulated signal, as shown in figure 4, when data processing equipment 114 collects spectrometer 104
Optical signal and the modulated signal carry out multiplying when, background light signal is eliminated, and reflected light signal intensity is amplified A
(amplitude that A is modulated signal) again.Amplified reflected light signal light intensity numerical value can make up the incidence of the transmitting of incident light source 102
The problems such as luminous intensity is weaker, true to the forecasting inaccuracy of etching terminal caused by reflected light signal is unobvious.The present invention utilizes a number
According to the modulated signal for the various amplitudes of generation that processing unit 114 can be convenient, according to the incident intensity and calculating of incident light source
Required intensity of reflected light carries out flexible modulation.
The period that pulse incident light source 102 of the present invention emits incident optical signal can set in several ways,
Flash lamp as the present invention uses can periodically issue incident optical signal, for more flexible adjusting incident optical signal
It period, can also be as shown in figure 5, the spectrometer 104 conveys the light period that a pulse signal triggers incident light source.Using figure
Mode shown in 5, which triggers incident light source 102, can effectively control the cycle synchronisation of reflected light signal and modulated signal, and can
The positional relationship of reflected light signal and modulated signal is adjusted, in the calculating process of data processing equipment, what is optimized is anti-
Penetrate optical signal information.
It periodically opens and disconnects so that spectrometer collection obtains arteries and veins by the way that incident light source is arranged in compared with the prior art
Formula reflected light signal is rushed, the present invention can be to avoid frequent as incident light source using the flash lamp for persistently emitting pulsed optical signal
To incident light source carry out mechanical switch, reduce the mechanical damage of incident light source；Simultaneously as in flash lamp each pulse period
The time of transmitting incident light is shorter than the time that the incident light source controlled by mechanical switch emits incident light in one cycle, can
To extend effective fluorescent lifetime of incident light source, the service life of incident light source is improved.In addition, the present invention uses flash lamp conduct
Incident light source can provide the incident light of full spectrum, and the user of plasma processing apparatus is allowed to have the choosing of more wave-length coverages
It selects.Meanwhile flash lamp can be shorter according to some cycles emission duration high-energy light signal, can either guarantee spectrometer
The reflected light signal intensity received is enough big, while continuous illumination time in the of short duration use longevity that can extend light source of incident light source
Life.Spectrometer collection to optical signal can handle operation in real time, improve accuracy and efficiency.
The present invention applies a modulated signal by the optical signal for arriving spectrometer collection, utilizes the positive and negative amplitude of modulated signal
The identical interference for removing background light signal of equal and with incident optical signal frequency, in addition to this, modulated signal can amplify instead
Light signal strength numerical value is penetrated, the accuracy for calculating etching terminal is improved.To accurately monitor the etching technics process of substrate membrane.
The data processing equipment can be a computer system.
IEP of the present invention can also monitor the process of depositing operation other than it can monitor etching technics, with etching
Unlike technique, depositing operation is the process that a film thickness constantly becomes larger, by entering to the intracavitary projection one of deposition reaction
Penetrate optical signal, according to above description, the deposition rate of depositing operation can be calculated, when according to the accurate deposition rate and
The film thickness for needing to deposit can accurately learn the terminal of depositing operation.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any this field
Technical staff without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore of the invention
Protection scope should be subject to the range that the claims in the present invention are defined.
Claims (20)
1. a kind of plasma processing apparatus for monitoring manufacturing process, reaction chamber and monitoring Substrate treatment including a processing substrate
The monitoring device of processing procedure, which is characterized in that the monitoring device includes:
One incident light source emits pulse incident light for the substrate surface into the reaction chamber；
One spectrometer, for acquiring the optical signal in the reaction chamber, the optical signal includes the pulse incident light in substrate
The background light signal that the pulse-echo optical signal and processing thereof plasma on surface issue；
One data processing equipment, for receive the spectrometer collection to optical signal and period and the pulse incident light are provided
Period identical modulated signal, the modulated signal have positive and negative both direction, and the modulated signal and institute in each period
It cancels out each other after stating the product superposition of background light signal；
The pulse-echo optical signal and the product of the modulated signal are not zero；
The terminal of manufacturing process is calculated using the pulse-echo optical signal of acquisition for the data processing equipment.
2. device as described in claim 1, it is characterised in that: the modulated signal signal that direction is positive in one cycle
Integral area is identical as the signal integration area that direction is negative.
3. device as described in claim 1, it is characterised in that: the product of the pulse-echo optical signal and the modulated signal
Greater than 0.
4. device as described in claim 1, it is characterised in that: the modulated signal is sinusoidal signal or cosine signal.
5. device as claimed in claim 4, it is characterised in that: in each period, the pulse-echo optical signal and it is described just
The wave crest of string signal or cosine signal is corresponding.
6. device as claimed in claim 4, it is characterised in that: in each period, the pulse-echo optical signal and it is described just
The trough of string signal or cosine signal is corresponding.
7. device as described in claim 1, it is characterised in that: the modulated signal is high level pulse periodic signal and low electricity
Flat pulse periodic signal, the high level pulse periodic signal are greater than zero, and the low level pulse periodic signal is described less than zero
The corresponding region area of high level pulse periodic signal region area corresponding with low level pulse periodic signal in a cycle
It is equal in magnitude.
8. the device as described in claim 4 or 7, it is characterised in that: the amplitude of the modulated signal is more than or equal to the pulse
The light intensity numerical value of reflected light signal.
9. device as described in claim 1, it is characterised in that: the incident light that the incident light source issues is Quan Guangpu.
10. device as described in claim 1, it is characterised in that: the incident light source is flash lamp.
11. device as described in claim 1, which is characterized in that the spectrometer sends pulse-triggered to the incident light source
Signal, to control the period of the incident light source transmitting pulse incident light.
12. a kind of method for monitoring plasma-treating technology, the method carry out in a plasma processing apparatus, special
Sign is that described method includes following steps:
It places the substrates in the reaction chamber of the plasma processing apparatus, the substrate is carried out at plasma process
Reason；
Emit a pulse incident light to the substrate, the pulse incident light is reflected in substrate surface；
The optical signal is simultaneously transported to a data processing equipment by the optical signal that issues in the reaction chamber described in a spectrometer collection,
The optical signal includes plasma reasons for its use optical signal in the pulse-echo optical signal and reaction chamber of substrate surface reflection；
The data processing equipment provides a modulated signal identical with the pulse incident photoperiod, and to the modulated signal with
The optical signal of spectrometer collection carries out multiplying；
The modulated signal is set as having positive negative direction and mutually support within each period with the product of the background light signal
Disappear；
The position of the modulated signal Yu the pulse-echo optical signal is set, so that the product of the two is not zero；
The endpoint calculation of plasma-treating technology is carried out using the pulse-echo optical signal information after elimination background light signal.
13. method as claimed in claim 12, it is characterised in that: the data processing equipment adjusts the modulated signal and institute
The position of pulse-echo optical signal is stated, so that the product of the two is greater than zero.
14. method as claimed in claim 12, it is characterised in that: the modulated signal that the data processing equipment provides is sine
Signal or cosine signal.
15. method as claimed in claim 14, it is characterised in that: the data processing equipment controls the pulse incident light letter
It is number corresponding with the wave crest or trough of the sinusoidal signal or cosine signal.
16. method as claimed in claim 12, it is characterised in that: it is anti-that the amplitude of the modulated signal is more than or equal to the pulse
Penetrate the intensity of optical signal.
17. method as claimed in claim 12, it is characterised in that: the incident optical signal is full spectral signal.
18. method as claimed in claim 12, it is characterised in that: the modulated signal be high level pulse periodic signal and
Low level pulse periodic signal, the high level pulse periodic signal be greater than zero, the low level pulse periodic signal less than zero,
The corresponding region area of high level region area corresponding with low level is equal in magnitude in one period.
19. method as claimed in claim 12, it is characterised in that: the spectrometer send a pulse triggering signal to it is described enter
Light source is penetrated, the pulse period of the incident light source is controlled.
20. method as claimed in claim 12, it is characterised in that: the data processing equipment is a computer system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610487877.7A CN107546094B (en) | 2016-06-28 | 2016-06-28 | Monitor the plasma processing apparatus and method of plasma process processing procedure |
| TW106108403A TWI640031B (en) | 2016-06-28 | 2017-03-14 | Plasma processing device and method for monitoring plasma process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610487877.7A CN107546094B (en) | 2016-06-28 | 2016-06-28 | Monitor the plasma processing apparatus and method of plasma process processing procedure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107546094A CN107546094A (en) | 2018-01-05 |
| CN107546094B true CN107546094B (en) | 2019-05-03 |
Family
ID=60962460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610487877.7A Active CN107546094B (en) | 2016-06-28 | 2016-06-28 | Monitor the plasma processing apparatus and method of plasma process processing procedure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107546094B (en) |
| TW (1) | TWI640031B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377457A (en) * | 1999-09-30 | 2002-10-30 | 拉姆研究公司 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN101494159A (en) * | 2008-01-22 | 2009-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | System and method for monitoring semiconductor processing technique |
| CN101960580A (en) * | 2008-02-29 | 2011-01-26 | 应用材料公司 | Advanced process sensing and control using near infrared spectral reflectometry |
| CN102332383A (en) * | 2011-09-23 | 2012-01-25 | 中微半导体设备(上海)有限公司 | End point monitoring method for plasma etching process |
| CN103117202A (en) * | 2013-02-19 | 2013-05-22 | 中微半导体设备(上海)有限公司 | Endpoint detection device and method of plasma treatment process |
| CN103943447A (en) * | 2013-01-17 | 2014-07-23 | 中微半导体设备(上海)有限公司 | Plasma processing device and processing method thereof |
| CN104733339A (en) * | 2013-12-24 | 2015-06-24 | Ap系统股份有限公司 | Method for compensating line beam energy and apparatus for operating the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905624B2 (en) * | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
| DE602007012503D1 (en) * | 2006-10-30 | 2011-03-31 | Applied Materials Inc | Endpoint detection for the etching of photomasks |
| CN101675495B (en) * | 2007-02-02 | 2011-12-14 | 雷克萨斯研究有限公司 | Method and apparatus for measuring process parameters of a plasma etch process |
| CN103337453B (en) * | 2008-10-07 | 2017-10-24 | 应用材料公司 | Equipment for effectively removing halogen residues from etching substrate |
-
2016
- 2016-06-28 CN CN201610487877.7A patent/CN107546094B/en active Active
-
2017
- 2017-03-14 TW TW106108403A patent/TWI640031B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377457A (en) * | 1999-09-30 | 2002-10-30 | 拉姆研究公司 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN101494159A (en) * | 2008-01-22 | 2009-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | System and method for monitoring semiconductor processing technique |
| CN101960580A (en) * | 2008-02-29 | 2011-01-26 | 应用材料公司 | Advanced process sensing and control using near infrared spectral reflectometry |
| CN102332383A (en) * | 2011-09-23 | 2012-01-25 | 中微半导体设备(上海)有限公司 | End point monitoring method for plasma etching process |
| CN103943447A (en) * | 2013-01-17 | 2014-07-23 | 中微半导体设备(上海)有限公司 | Plasma processing device and processing method thereof |
| CN103117202A (en) * | 2013-02-19 | 2013-05-22 | 中微半导体设备(上海)有限公司 | Endpoint detection device and method of plasma treatment process |
| CN104733339A (en) * | 2013-12-24 | 2015-06-24 | Ap系统股份有限公司 | Method for compensating line beam energy and apparatus for operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201812827A (en) | 2018-04-01 |
| CN107546094A (en) | 2018-01-05 |
| TWI640031B (en) | 2018-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101165867B (en) | Monitoring substrate processing using reflected radiation | |
| JP6837886B2 (en) | Plasma processing equipment and plasma processing method | |
| TWI528452B (en) | Plasma processing device and plasma processing method | |
| KR100904110B1 (en) | Neural network methods and apparatuses for monitoring substrate processing | |
| KR100499229B1 (en) | Plasma processing apparatus for processing semiconductor wafer using plasma | |
| TWI593020B (en) | Plasma processing apparatus and plasma processing method | |
| US11056322B2 (en) | Method and apparatus for determining process rate | |
| TWI734700B (en) | Apparatus for determining process rate | |
| KR20170107094A (en) | Etch process control using optical metrology and sensor devices | |
| JP2021504977A (en) | Methods and equipment for real-time monitoring of plasma chamber wall condition | |
| CN107546094B (en) | Monitor the plasma processing apparatus and method of plasma process processing procedure | |
| KR100893961B1 (en) | Shallow-angle interference process and apparatus for determining real-time etching rate | |
| CN100459027C (en) | Monitoring substrate processing using reflected radiation | |
| CN106876236B (en) | The device and method for monitoring plasma process processing procedure | |
| TWI633575B (en) | Plasma processing device for monitoring technology process and monitoring plasma treatment Technical process approach | |
| JP2612089B2 (en) | Method of detecting film thickness of film to be etched, film thickness detecting device and etching device | |
| CN106876238B (en) | Apparatus and method for monitoring plasma process | |
| KR20240070268A (en) | Apparatus for measuring radical density distribution based on light abostorption and operating method thereof | |
| US20240159657A1 (en) | Apparatus for measuring radical density distribution based on light absorption and operating method thereof | |
| KR20220069532A (en) | Time domain spectroscopic device and plasma processing system | |
| KR20240020790A (en) | Plasma process monitoring method and plasma process monitoring apparatus | |
| JP2023127323A (en) | Method for measuring thickness of film, and processing apparatus | |
| Wang et al. | The endpoint detection technique for deep submicrometer plasma etching | |
| JPS5944828A (en) | Dry etching | |
| CN107644811A (en) | The etching terminal monitoring method and Bosch lithographic method of Bosch technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |